WO2008054015A1 - Thermoelectric element and thermoelectric module - Google Patents
Thermoelectric element and thermoelectric module Download PDFInfo
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- WO2008054015A1 WO2008054015A1 PCT/JP2007/071588 JP2007071588W WO2008054015A1 WO 2008054015 A1 WO2008054015 A1 WO 2008054015A1 JP 2007071588 W JP2007071588 W JP 2007071588W WO 2008054015 A1 WO2008054015 A1 WO 2008054015A1
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- 239000000463 material Substances 0.000 claims description 6
- 230000008646 thermal stress Effects 0.000 abstract description 45
- 230000035882 stress Effects 0.000 abstract description 41
- 230000006378 damage Effects 0.000 abstract description 8
- 230000005611 electricity Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000000116 mitigating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 103
- 238000001816 cooling Methods 0.000 description 17
- 238000010248 power generation Methods 0.000 description 13
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000005219 brazing Methods 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 102100025490 Slit homolog 1 protein Human genes 0.000 description 3
- 101710123186 Slit homolog 1 protein Proteins 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 101100008044 Caenorhabditis elegans cut-1 gene Proteins 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
Definitions
- thermoelectric element and thermoelectric module Thermoelectric element and thermoelectric module
- the present invention relates to a thermoelectric module that directly converts energy between thermal energy and electric energy and uses a plurality of thermoelectric modules.
- thermoelectric elements Two types of semiconductor elements (thermoelectric elements) with different polarities, ie, N-type thermoelectric elements and P-type thermoelectric elements, are arranged between the heat collecting part on the high heat side and the heat radiating part on the low temperature side.
- the end portions of the elements are alternately connected in series via electrodes, and heat energy can be directly converted into electric energy (for example, Japanese Patent Application Laid-Open No. 2 0 0 5-3 2 2 8 4 8 (See the publication).
- thermoelectric element length (height) of the thermoelectric element it is preferable to shorten the element length (height) of the thermoelectric element to increase the amount of heat flowing to the thermoelectric element.
- the rigidity in the width direction of the thermoelectric element increases. There is a risk that the thermoelectric element may be destroyed by stress in the width direction of the thermoelectric element caused by the difference in thermal expansion between the end and the low temperature side end.
- the present invention has been made to solve the above problems, and an object of the present invention is to provide a thermoelectric element capable of preventing breakage due to thermal stress and a thermoelectric module using the same.
- thermoelectric element comprises: an element that converts energy between thermal energy and electric energy; and a pair of electrodes that are connected to both ends of the element.
- a stress relaxation part is provided to relieve stress caused by the temperature difference between both ends.
- thermoelectric element according to the present invention, the element is provided with the stress relaxation part for relaxing the stress generated by the temperature difference between the both ends, so that the high temperature side end part and the low temperature side end part are provided.
- Thermal stress caused by the temperature difference can be relaxed. For this reason, the destruction of the element due to thermal stress can be suppressed, and the power generation amount can be improved by using an element having a small aspect ratio.
- the stress relaxation part is a gap part formed from an end part of the element toward an end part.
- the present invention by forming a gap in the element from the end toward the end, the element is easily deformed in a direction parallel to the connection surface of the element and the electrode, and the element in the direction is Stiffness can be reduced. For this reason, if it occurs due to the temperature difference between the high-temperature end of the device and the low-temperature end, the thermal stress can be relaxed. Therefore, it is possible to suppress the destruction of the element due to thermal stress, and it is possible to improve the amount of power generation by using an element having a small aspect ratio.
- thermoelectric element includes an element that converts energy between thermal energy and electric energy, and a pair of electrodes provided at both ends of the element, and at least a part of the element is provided. It is characterized by being divided into a plurality of portions in a direction substantially perpendicular to the joint surface with the electrode.
- thermoelectric element When power generation is performed using a thermoelectric element, one end provided with one electrode is heated to a high temperature, and the other end provided with the other electrode is cooled to a low temperature. At that time, the high temperature side of the thermoelectric element expands and the low temperature side contracts. As a result, thermal stress acts on the thermoelectric element.
- the thermoelectric element according to the present invention at least a part of the element is divided into a plurality of parts in a direction substantially perpendicular to the joint surface with the electrode, whereby the divided parts are separated from each other. And the rigidity against bending deformation of the portion decreases. Therefore, the thermal stress generated by the temperature difference between both ends of the thermoelectric element can be relaxed by the deformation of the element. As a result, it is possible to prevent the element from being destroyed by thermal stress.
- the element is preferably divided into a plurality of portions by a plurality of slits formed between one electrode and the other electrode.
- thermoelectric element it is preferable that one end of each of the plurality of portions is coincident with one end of the element. In this way, the thermal stress increases, and the rigidity of the element end can be reduced. Therefore, the thermal stress acting on the end can be relaxed by deformation of the element end. As a result, it is possible to effectively prevent damage to the edge of the element due to thermal stress.
- the width in the short direction of each part constituting the plurality of parts is set based on the stress generated in the element and the fracture toughness of the element. In this way, by setting the width of the part in consideration of the stress acting on the element and the fracture toughness of the element, the strength against the thermal stress at the junction between the element and the electrode can be secured. It becomes possible to prevent the joint from being broken.
- thermoelectric element it is preferable that a notch for dividing the joint into fine parts smaller than the plurality of parts is formed in the joint with at least one of the electrodes of the element. In this way, it is possible to improve the strength against thermal stress at the joint between the element and the electrode, and to prevent the joint from being broken.
- the width in the short direction of the fine portion divided by the incision is set based on the fracture toughness of the stress element generated in the element. In this way, by setting the width of the fine portion in consideration of the stress acting on the element and the rupture toughness of the element, the strength against the thermal stress at the junction between the element and the electrode can be ensured. It is possible to prevent the joint from being broken.
- thermoelectric element according to the present invention has a conductive part at the junction of the element divided into the fine parts. It is preferable that the element and the electrode are bonded together by filling the bonding material. In this way, the contact area at the junction between the element and the electrode can be increased, and the electrical resistance of the junction, that is, the electrical resistance of the thermoelectric element can be reduced. On the other hand, it is also possible to form the joint portion of the electrode with the element so as to fit into the notch formed in the element, and to join the element and the electrode by fitting the joint portion of the electrode with the notch of the element. The contact area at the junction with the electrode can be increased. Therefore, even in this case, it is possible to reduce the electrical resistance of the junction, that is, the electrical resistance of the thermoelectric element.
- the width in the short direction of the fine portion is preferably set based on the ratio between the electrical resistance of the junction interface and the electrical resistivity of the element. In this way, by setting the width of the fine portion in consideration of the ratio between the electrical resistance of the junction interface and the electrical resistivity of the element, the electrical resistance of the junction between the element and the electrode, that is, the electrical resistance of the thermoelectric element Can be reduced more appropriately.
- the depth of the junction between the element and the electrode is preferably set based on the ratio between the electrical resistance of the junction interface and the electrical resistivity of the element and the width in the short direction of the fine portion. .
- the depth of the junction can be set in consideration of the current density distribution in the longitudinal direction of each fine portion at the junction between the element and the electrode. Therefore, it is possible to more effectively reduce the electrical resistance of the junction between the element and the electrode, that is, the electrical resistance of the thermoelectric element.
- thermoelectric module according to the present invention is characterized in that a plurality of any of the thermoelectric elements described above are connected. According to the thermoelectric module according to the present invention, the thermoelectric module is prevented from being damaged by thermal stress caused by the temperature difference between both ends of the thermoelectric module by being configured by connecting any one of the thermoelectric elements described above. Can be performed.
- the element since the element is provided with the stress relaxation portion for relaxing the stress caused by the temperature difference between both ends, the temperature difference between the high temperature side end and the low temperature side end The generated thermal stress can be relaxed. Therefore, the destruction of the element due to thermal stress can be suppressed.
- FIG. 1 is a cross-sectional view of the thermoelectric element according to the first embodiment.
- FIG. 2 is a diagram for explaining the shear stress at the interface between the element and the electrode.
- FIG. 3 is a diagram for explaining a method for setting the width of the fine portion.
- FIG. 4 is a cross-sectional view showing the junction between the element and the electrode.
- FIG. 5 is a cross-sectional view showing another example of the junction between the element and the electrode.
- FIG. 6 is a diagram for explaining the potential gradient and the current density distribution in the longitudinal direction of the fine portion at the junction between the element and the electrode.
- FIG. 7 is a cross-sectional view showing bending deformation due to thermal stress acting on the thermoelectric element.
- FIG. 8 is a perspective view of a thermoelectric element according to the second embodiment.
- FIG. 9 is a perspective view of a semiconductor element constituting the thermoelectric element according to the third embodiment.
- FIG. 10 is a plan view of the semiconductor element shown in FIG.
- FIG. 11 is a cross-sectional view of a thermoelectric generator provided with a thermoelectric module configured by thermoelectric elements according to a third embodiment.
- FIG. 12 is a cross-sectional view of an essential part for explaining a joining method of the thermoelectric element, the heat transfer fin side electrode, and the module cooling member side electrode in the thermoelectric generator shown in FIG.
- FIG. 13 is an explanatory diagram of a thermoelectric element according to the fourth embodiment.
- FIG. 1 is a cross-sectional view of a thermoelectric element 1 according to the first embodiment.
- the direction of arrow H shown in FIG. 1 that is, the method of connecting one electrode and the other electrode.
- the direction is the height direction of the thermoelectric element
- the direction of arrow C that is, the direction parallel to the electrode is the width direction of the thermoelectric element.
- the thermoelectric element 1 includes an N-type or P-type semiconductor element 11 that directly converts energy between heat energy and electric energy, and a pair of electrodes 20 provided on both end faces of the semiconductor element 11. , 2 1 and.
- the semiconductor element 11 corresponds to an element described in the claims.
- the semiconductor element 11 is an element having a substantially rectangular parallelepiped shape.
- the semiconductor element 11 1 includes a plurality of semiconductor elements 11 1 parallel to the side surface of the semiconductor element 11 1 from the joint surface with one electrode 20 toward the joint surface with the other electrode 21 (in the example of FIG. 1). 3) slits 1 1 s are formed. One end of the slit 11 s reaches the junction surface with one electrode 20 of the semiconductor element 11. On the other hand, the other end of the slit 11 s does not reach the joint surface with the other electrode 21 of the semiconductor element 11.
- a similar slit 11 s is formed also on the side surface orthogonal to the cross section shown in FIG. That is, the slits 11 s are formed in a lattice shape when the semiconductor element 11 is viewed in plan. Due to these slits 1 1 s, a part of the semiconductor element 1 1 is divided into a plurality of parts (in the example of FIG. 1, a part of 1 6 (4 X 4), hereinafter referred to as “divided part”). Divided into d. In the example of Fig. 1, the number of slits is “3 X 3”, but it goes without saying that the number of slits 11 s is not limited to this.
- a plurality of cuts 1 1 c are formed at the junction of the semiconductor element 11 with the electrode 20 to divide the junction divided by the slit 11 s described above into finer fine portions 1 lm. ing.
- the cut 1 1 c is formed in parallel with the slit 1 1 s.
- the notch 11 c is also formed on the side surface orthogonal to the cross section shown in FIG. That is, the cuts 11 c are formed in a lattice shape finer than the lattice defined by the slits 11 s described above when the semiconductor element 11 is viewed in plan.
- the number of cuts is 1 1 m It is determined according to the setting range.
- the slit 1 1 s and the notch 1 1 c are gaps formed from one end of the semiconductor element 1 1 toward the other end, and a temperature difference between both ends of the semiconductor element 1 1 It functions as a stress relieving part that relieves stress caused by.
- FIG. 2 is a diagram for explaining the shear stress at the interface between the semiconductor element and the electrode.
- FIG. 3 is a diagram for explaining a method of setting the width of the fine part 1 lm.
- ⁇ s ⁇ (a s one am) ⁇ ⁇ T ⁇ E s] / ⁇ 1 + (E s / Em) ⁇ ⁇ ⁇ ⁇
- a s is the linear expansion coefficient (Z ° C) of the semiconductor element
- am is the linear expansion coefficient of the electrode material ⁇ / °
- ⁇ is the temperature difference (° C) from the bonding temperature
- E s is the semiconductor element
- the elastic modulus (P a) and Em is the elastic modulus (P a) of the electrode material.
- the tensile stress ⁇ s generates an infinitely radiating interface shear stress at the end of the joint surface of the semiconductor element.
- the value of the rupture due to the shear stress diverges in the linear theory, so the stress theory (the theory that swells when a certain stress is exceeded) breaks in a state where the temperature difference is zero, and the failure cannot be predicted.
- the area where stress is dissipated is limited to a small area at the end, and can be handled by smashing mechanics.
- the stress divergence region at the end is regarded as a microcrack treated by fracture mechanics, and the crack progresses in a state where the microcrack is generated in the semiconductor element to which the tensile stress ⁇ s acts, that is, breaks down. It is determined whether or not.
- the fracture mechanics the following condition (2) indicates that the crack does not progress (break) when a small crack of length L (m) is generated in the semiconductor element to which the tensile stress ⁇ s acts.
- K c is the mode 2 fracture toughness (P a -m 1/2 ) of the semiconductor device.
- the physical properties and usage conditions ( ⁇ ⁇ ) of the semiconductor element and the electrode material are assumed as follows.
- K c 0.4 X 1 0 6 (P a 'm 1/2 )
- E s 70 X 1 0 9 (P a)
- Em 1 0 0 X 1 0 9 (P a)
- am 4 X 1 0 1-6 (/ ° C)
- ⁇ 3 0 0 (° C).
- the critical crack length L c is 2 1 X 1 0_ 6 (m) from the above equation (3).
- the crack length L is an imaginary crack length, and the region where the shear stress at the interface increases is regarded as a crack, but it is clear that this value cannot exceed the width of the semiconductor element. is there. Therefore, the critical crack length L is the width of the semiconductor element. By setting it to a few times or less, it is possible to realize a joint that does not break even at high temperatures. Therefore, as shown in FIG. 3, in the present embodiment, the width d of the fine portion 11 m of the semiconductor element 11 is set to be several times the critical crack length Lc or less.
- FIG. 4 is an enlarged cross-sectional view showing a joint portion between the semiconductor element 11 and one electrode 20.
- the semiconductor element 11 and the electrode 20 are joined by so-called brazing. More specifically, the fine part 1 lm of the semiconductor element 1 1 and the electrode 2 W
- the melted conductive bonding material (brazing material) 2 2 is poured between and filled with the semiconductor element 11 and the electrode 20 are bonded.
- FIG. 5 shows another preferred structural example of the coupling portion between the fine portion 1 l m of the semiconductor element 11 and the electrode 20.
- the junction of the electrode 20 is formed in a comb-shaped cross section so as to fit into the unevenness of the coupling portion of the semiconductor element 11 (that is, the unevenness formed by the notch 11c and the fine portion 1lm).
- the semiconductor element 11 and the electrode 20 are coupled by fitting the unevenness of the coupling part on the semiconductor element 1 side and the unevenness of the bonding part on the electrode 20 side.
- the width of the fine portion 1 1111 (1 and the coupling depth D between the fine portion 1 lm and the electrode 20 are set to satisfy the following equations (4) and (5).
- ⁇ is the electrical resistance of the junction interface (electrical resistance per area of the junction surface) ( ⁇ ⁇ m 2 ), and ⁇ is the electrical resistivity (volume resistivity) of the semiconductor element 11 ( ⁇ ⁇ m)
- FIG. 6 is a diagram (current analysis model) for explaining the potential gradient and current density distribution of the fine portion 11 m at the junction between the semiconductor element 11 and the electrode 20.
- the current I flowing in the fine part 1 1 m is the potential U in the fine part 1 lm. Is determined by the following equation (6).
- the current i flowing from the fine part 1 lm to the electrode 20 is determined by the potential difference between the potential U of the fine part 1 lm and the potential of the electrode 20 and the electrical resistance ⁇ of the junction interface.
- the following equation (7) is obtained. i -U / ⁇ (7)
- thermoelectric element 1 when power is generated using the thermoelectric element 1, the side surface of one electrode 20 is brought to a high temperature and the side surface of the other electrode 21 is brought to a low temperature. At that time, the high temperature side expands and the low temperature side contracts, and the thermoelectric element 1 is subjected to thermal stress generated by the difference in thermal expansion between the high temperature side and the low temperature side.
- the semiconductor element 11 constituting the thermoelectric element 1 is divided into a plurality of divided portions 1 1 d by the slits 1 1 s, whereby the aspect ratio (height L / Width W) is increased, and the rigidity of thermoelectric element 1 in the width direction is reduced. Therefore, when the thermal stress generated by the difference in thermal expansion between the high temperature side and the low temperature side acts on the thermoelectric element 1, the thermoelectric element 1 (semiconductor element 11) is entirely deformed as shown in FIG. As described above, according to the present embodiment, since the structure is easily deformable, the thermal stress caused by the thermal expansion difference can be appropriately reduced by the deformation of the thermoelectric element 1.
- thermoelectric element 1 since one end of the slit 11 s reaches the joint surface with the electrode 20, the rigidity of the end of the semiconductor element 11 where the thermal stress increases is effectively increased. Can be reduced. Therefore, the thermal stress acting on the end portion can be appropriately relaxed by the end portion of the semiconductor element 11 being deformed. As a result, it is possible to effectively prevent the end portion of the semiconductor element 11 due to thermal stress.
- thermal stress is generated due to a change in temperature.
- the junction between the semiconductor element 11 and the electrode 20 is divided into a fine part 1 lm by a plurality of notches 11c, and the fine part 1 lm
- the width d is set to be not more than several times the critical crack length Lc determined based on the tensile stress generated in the semiconductor element 11 and the fracture toughness of the semiconductor element 11. Therefore, it is possible to ensure the strength against the thermal stress at the joint between the semiconductor element 11 and the electrode 20, for example, even when the semiconductor element 11 and the electrode 20 are rigidly joined. It becomes possible to prevent the joint from being broken.
- thermoelectric element 1 the conductive brazing material 2 2 is filled in the junction of the semiconductor element 11 divided into the fine parts 1 lm, so that the semiconductor element 11 and the electrode 20 Because of this, the contact area at the junction between the semiconductor element 11 and the electrode 20 can be increased, and the electrical resistance of the junction, that is, the electrical resistance of the thermoelectric element 1 can be reduced. It becomes.
- the unevenness of the coupling portion of the semiconductor element 11 ie, In other words, the joint part of the electrode 20 is formed in a cross-sectional comb shape so as to fit in the notch 11 1 c and the unevenness formed by the fine part 1 lm, and The semiconductor element 11 and the electrode 20 may be coupled by fitting the unevenness of the joint on the electrode 20 side. Even in such a configuration, the contact area at the junction between the semiconductor element 11 and the electrode 20 can be increased, and the electrical resistance of the junction can be reduced.
- the depth D of the junction portion between the semiconductor element 11 and the electrode 20 is equal to the ratio of the electrical resistance ⁇ of the junction interface and the electrical resistivity ⁇ of the element to a fine portion 1 lm. Since it is set based on the width d (to satisfy the above equation (5)), the electrical resistance of the junction between the semiconductor element 11 and the electrode 20, that is, the electrical resistance of the thermoelectric element 1 is more effective. It becomes possible to reduce it.
- the semiconductor element 11 is divided into relatively large divided portions lid by the slits 11 s, and the junction between the semiconductor element 11 and the electrode 20 is cut, and the fine portions 1 are formed by 1 1 c.
- lm as shown in FIG. 8, without forming a slit, a cut is made from the junction surface with one electrode 20 to the junction surface with the other electrode 21.
- 1 2 The entire structure may be divided into elongated fine parts 12 2 m, that is, a fibrous semiconductor element 12 2 m may be bundled and joined to the electrodes 20 and 21.
- thermoelectric element 2 is a perspective view of thermoelectric element 2 in which a pair of N-type semiconductor element 1 2 n and P-type semiconductor element 1 2 p are electrically connected in series (thermally in parallel) by electrode 20. It is.
- the notch 1 2 c is a gap formed from the end of the semiconductor element 1 2 toward the end, and the semiconductor element 1 2 It functions as a stress relieving part that relieves the stress caused by the temperature difference between the two end parts.
- Other configurations, in particular, the width of the fine portion 1 2 111 (1, the joining method with the electrodes 2 0 and 2 1, the joining depth D, and the like are the same as or similar to those in the first embodiment described above, and are therefore described here. Is omitted.
- thermoelectric element 2 when power generation is performed using the thermoelectric element 2, the side surface of one electrode 20 is brought to a high temperature and the side surface of the other electrode 21 is brought to a low temperature. At that time, the high temperature side expands and the low temperature side contracts, and the thermoelectric element 2 is subjected to thermal stress generated by the difference in thermal expansion between the high temperature side and the low temperature side.
- the semiconductor elements 12 2 n and 12 p constituting the thermoelectric element 2 are divided into a plurality of fine portions 12 m, whereby the aspect ratio of the fine portions 12 m is determined. And the rigidity in the width direction of the thermoelectric element 2 is further reduced. Therefore, when the thermal stress generated by the difference in thermal expansion between the high temperature side and the low temperature side acts on the thermoelectric element 2, the thermoelectric element 2 (semiconductor element 1 2) is more easily deformed as a whole.
- the present embodiment since the structure is more easily deformable, the thermal stress caused by the thermal expansion difference can be appropriately reduced by the deformation of the thermoelectric element 2. As a result, it is possible to prevent the thermoelectric element 2 from being damaged due to thermal stress.
- the present embodiment can provide the same or similar effects as those of the first embodiment described above.
- FIG. 9 is a perspective view of the semiconductor element 1 3 constituting the thermoelectric element according to the third embodiment.
- FIG. 10 is a plan view of the semiconductor element 13 shown in FIG. 9, and is a diagram for explaining a slit forming method.
- the thermoelectric element according to the present embodiment includes a semiconductor element 13 that constitutes the thermoelectric element, and the other electrode (not shown) from the joint surface with one electrode (not shown).
- the other electrode This is different from the first embodiment described above in that a plurality of slits 13 su are formed from a joint surface with (not shown) to a joint surface with one electrode (not shown).
- the slit 13 su is a gap formed from the end portion of the semiconductor element 13 toward the end portion, and relieves the stress caused by the temperature difference between both ends of the semiconductor element 13. Functions as a stress relaxation part.
- thermoelectric element according to the present embodiment further includes the junction part divided into the plurality of divided parts 13 d by the slit 13 su described above at the junction with the other electrode of the semiconductor element 13. It differs from the first embodiment described above in that a plurality of cuts 1 3 c divided into fine fine portions 13 m are formed. Other configurations are the same as or similar to those of the first embodiment described above, and thus the description thereof is omitted here.
- the one electrode side surface is set to a high temperature and the other electrode side surface is set to a low temperature. At that time, the high temperature side expands and the low temperature side contracts, and thermal stress generated by the difference in thermal expansion between the high temperature side and the low temperature side acts on the thermoelectric element.
- the semiconductor element 13 constituting the thermoelectric element 13 is formed with slits 1 3 s and 1 3 su formed alternately from both end faces, so that the aspect ratio of each divided portion 1 3 d is increased. And the rigidity in the width direction of the thermoelectric element is further reduced. Therefore, when the thermal stress generated by the difference in thermal expansion between the high temperature side and the low temperature side acts on the thermoelectric element, the thermoelectric element is deformed more easily as a whole.
- the slits 1 3 s and 1 3 su are alternately inserted from both end faces, so that the divided parts 1 3 d can be separated separately.
- the aspect ratio of each divided portion 1 3 d can be increased. Therefore, the rigidity of the thermoelectric element can be reduced more effectively without making the manufacturing process of the thermoelectric element relatively complicated. As a result, the thermal stress caused by the difference in thermal expansion can be appropriately mitigated by deformation of the thermoelectric element, and it is possible to prevent breakage due to the thermal stress of the thermoelectric element.
- connection portion with one electrode not only the connection portion with one electrode but also the connection portion with the other electrode is divided into fine portions 13 m, so that the strength of the joint portion can be increased. Can do.
- present embodiment can provide the same or similar effects as those of the first embodiment described above.
- FIG. 11 is a cross-sectional view of a thermoelectric power generation device 100 including a thermoelectric module 90 composed of thermoelectric elements 3 according to the third embodiment.
- FIG. 12 illustrates a method of joining the thermoelectric element 3 to the heat transfer fin side electrode 10 2 and the module cooling member side electrode 10 4 in the thermoelectric power generation device 100 shown in FIG. It is principal part sectional drawing for this.
- the thermoelectric generator 100 is made of insulating ceramic heat transfer fins 10 1 constituting the high temperature side heat receiving part and insulating ceramics constituting the low temperature side heat radiating part. Between the module cooling member 10 3, the N-type thermoelectric element 3 n and the P-type thermoelectric element 3 p according to the third embodiment described above are alternately connected in series via the electrodes 20, 21. A thermoelectric module 90 is arranged.
- the module cooling member 10 3 is formed with a plurality of cooling water passages 10 5.
- a cooling water pipe (not shown) is connected to the cooling water passage 105, and the module cooling member 103 is cooled by circulating and supplying the cooling liquid.
- a heat transfer fin side electrode 10 2 is attached to a joint portion of the heat transfer fin 10 1 and the thermoelectric module 90.
- Each of the heat transfer fins 10 1 and the heat transfer fin side electrode 1 0 2 has a comb-shaped concavo-convex shape on the heat transfer fin 1 0 1 side, By fitting the irregularities on the heat transfer fin side electrode 10 2 side, the heat transfer fin 100 1 and the heat transfer fin side electrode 10 2 are coupled.
- a module cooling member side electrode 10 4 is attached to a coupling portion between the module cooling member 103 and the thermoelectric module 90.
- Each of the module cooling member 10 3 and the module cooling member side electrode 10 4 is formed with concavities and convexities having a comb-shaped cross section. The unevenness on the module cooling member 10 3 side and the module cooling member side electrode 10 4 The module cooling member 10 3 and the module cooling member side electrode 10 4 are coupled by fitting the unevenness on the side.
- thermoelectric module 90 the heat transfer fin side electrode 10.02, and the module cooling member side electrode 10.04 are joined by being crimped and joined at a high temperature. ing.
- thermoelectric power generation device 100 has, for example, the heat transfer fins 100 to allow the exhaust gas to flow so as to generate heat by collecting the heat of the exhaust system of the automobile. It is installed facing the route. Then, the heat of the exhaust gas recovered by the heat transfer fins 10 1 is transferred to the electrode 20 at one end of the thermoelectric module 90 via the heat transfer fin side electrode 10 2, and the other end of the thermoelectric module 90
- the plurality of N-type thermoelectric elements 3 n and P-type thermoelectric elements constituting the thermoelectric module 90 by radiating heat from the electrode 21 to the module cooling member 10 3 via the electrode 10 4 3 p generates electromotive force to generate electricity.
- thermoelectric module 90 due to the thermal stress caused by the temperature difference between both ends of the thermoelectric module 90 due to the thermoelectric element 3 according to the third embodiment described above. Can be prevented.
- thermoelectric module 90 the thermal stress due to the difference in thermal expansion coefficient between the electrode 20 and the heat transfer fin side electrode 10 02 and the heat transfer fin 10 0 1 and the electrode 21 and the module cooling member side electrode Thermal response due to difference in thermal expansion coefficient between 1 0 4 and module cooling member 1 0 3 Can withstand force.
- Fig. 13 (a) is a front view of the thermoelectric device according to the fourth embodiment
- Fig. 13 (b) and Fig. 13 (c) are cross-sectional views of the semiconductor device at XIII-XIII in Fig. 13 (a). It is.
- thermoelectric element according to the present embodiment forms a gap 14 a formed in the semiconductor element 14 constituting the thermoelectric element from the end toward the end. It is a thing.
- the gap portion 14 a functions as a stress relaxation portion that relieves stress caused by a temperature difference between both ends of the semiconductor element 14.
- thermoelectric element When power generation is performed using a thermoelectric element, one end provided with one electrode is heated to a high temperature and the other end provided with the other electrode is cooled to a low temperature. At that time, the high temperature side of the semiconductor element 14 expands and the low temperature side contracts. As a result, thermal stress acts on the semiconductor element 14.
- the semiconductor device 14 is deformed in a direction parallel to the connection surface between the semiconductor device 14 and the electrodes 20, 21 and the semiconductor device 1 in that direction is deformed.
- the rigidity of 4 can be reduced. For this reason, when it is caused by a temperature difference between the high temperature side end of the semiconductor element 14 and the low temperature side end, the thermal stress can be reduced. Therefore, it is possible to suppress the destruction of the semiconductor element 14 due to thermal stress, and it is possible to improve the power generation amount by using the semiconductor element 14 having a small aspect ratio.
- the cross-sectional shape of the gap portion 14 a is, for example, circular as shown in FIG. 13 (b). In this case, it is preferable to form a plurality of gap portions 14 a and arrange them at predetermined intervals. Further, the cross-sectional shape of the gap portion 14 a is, for example, a cross shape as shown in FIG. 13 (c). Also in this case, it is preferable to form a plurality of gaps 14a and arrange them at a predetermined interval.
- the gap portion 14a may be formed so as to penetrate from the end portion of the semiconductor element 14 to a position where it does not reach from the one end portion to the other end portion.
- slits and cuts in other embodiments may be formed. Further, it may be applied to a thermoelectric module as in the third embodiment.
- the other end of the slit 11 s does not reach the joint surface with the other electrode 21, but a plurality of divisions are made by inserting the slit 11 s up to the joint surface. It can be separated into parts.
- the shapes and materials of the semiconductor elements 1 1, 1 2, and 13 are not limited to the above embodiment.
- the shape of the semiconductor elements 1 1, 1 2, 1 3 may be a cylindrical shape.
- thermoelectric element 3 according to the third embodiment is used as the thermoelectric element constituting the thermoelectric module 90.
- thermoelectric element 1 according to the first embodiment or the first The thermoelectric element 2 according to the second embodiment may be used.
- thermoelectric element in a thermoelectric element and a thermoelectric module, stress caused by a temperature difference between both end portions of the element can be relieved to suppress the destruction of the element due to thermal stress.
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Semiconductor Lasers (AREA)
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/447,771 US8895832B2 (en) | 2006-11-02 | 2007-10-31 | Thermoelectric element and thermoelectric module |
DE112007002615.4T DE112007002615B4 (de) | 2006-11-02 | 2007-10-31 | Thermoelektrische Vorrichtung und thermoelektrisches Modul |
JP2008542208A JP4888491B2 (ja) | 2006-11-02 | 2007-10-31 | 熱電素子および熱電モジュール |
CN2007800404408A CN101529606B (zh) | 2006-11-02 | 2007-10-31 | 热电元件及热电模块 |
Applications Claiming Priority (2)
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JP2006-299277 | 2006-11-02 | ||
JP2006299277 | 2006-11-02 |
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WO2008054015A1 true WO2008054015A1 (en) | 2008-05-08 |
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ID=39344350
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PCT/JP2007/071588 WO2008054015A1 (en) | 2006-11-02 | 2007-10-31 | Thermoelectric element and thermoelectric module |
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US (1) | US8895832B2 (ja) |
JP (1) | JP4888491B2 (ja) |
CN (1) | CN101529606B (ja) |
DE (1) | DE112007002615B4 (ja) |
WO (1) | WO2008054015A1 (ja) |
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Also Published As
Publication number | Publication date |
---|---|
CN101529606B (zh) | 2011-07-20 |
US8895832B2 (en) | 2014-11-25 |
US20100059096A1 (en) | 2010-03-11 |
JPWO2008054015A1 (ja) | 2010-02-25 |
JP4888491B2 (ja) | 2012-02-29 |
DE112007002615B4 (de) | 2020-02-06 |
CN101529606A (zh) | 2009-09-09 |
DE112007002615T5 (de) | 2009-09-10 |
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