JP6909062B2 - 熱電モジュール - Google Patents
熱電モジュール Download PDFInfo
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- JP6909062B2 JP6909062B2 JP2017116650A JP2017116650A JP6909062B2 JP 6909062 B2 JP6909062 B2 JP 6909062B2 JP 2017116650 A JP2017116650 A JP 2017116650A JP 2017116650 A JP2017116650 A JP 2017116650A JP 6909062 B2 JP6909062 B2 JP 6909062B2
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- thermoelectric element
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- 230000035882 stress Effects 0.000 description 22
- 230000008646 thermal stress Effects 0.000 description 14
- 229920001721 polyimide Polymers 0.000 description 13
- 238000012545 processing Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Connection of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
- F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
Description
Claims (4)
- 熱電モジュールにおいて、
第1および第2の熱電素子と、
板状の本体部を有し、前記本体部の第1の面が前記第1の熱電素子の第1の端面および前記第2の熱電素子の第1の端面に接合されて前記第1および第2の熱電素子を互いに電気的に接続する第1の電極と、
前記第1の熱電素子の前記第1の端面とは反対側の第2の端面に接合される第2の電極と、
前記第2の熱電素子の前記第1の端面とは反対側の第2の端面に接合される第3の電極とを備え、
前記第1の電極は、前記第1および第2の熱電素子のそれぞれの端面の中心を結ぶ長手方向に対応する幅方向の第1の側に形成される第1の切欠部と、前記幅方向の第2の側に形成される第2の切欠部とを有し、
前記幅方向について、前記第1の電極の前記第1の側と前記第2の側との間の区間には前記第1の切欠部または前記第2の切欠部の少なくともいずれかが形成され、
前記第1および第2の切欠部は、前記長手方向に対して傾いた方向に、互いに対向して延びる
ことを特徴とする熱電モジュール。 - 前記幅方向について、前記第1の電極の前記第1の側と前記第2の側との間の一部の区間には前記第1の切欠部および前記第2の切欠部の両方が形成される
ことを特徴とする、請求項1に記載の熱電モジュール。 - 前記第1および第2の切欠部は、互いに略平行な方向に延びる
ことを特徴とする、請求項1または2に記載の熱電モジュール。 - 前記長手方向および前記幅方向を含む平面において、前記第1の電極の面積に対する前記第1の切欠部および前記第2の切欠部の合計面積の比率は0.33未満である
ことを特徴とする、請求項1から3のいずれか1項に記載の熱電モジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017116650A JP6909062B2 (ja) | 2017-06-14 | 2017-06-14 | 熱電モジュール |
PCT/JP2018/017917 WO2018230199A1 (ja) | 2017-06-14 | 2018-05-09 | 熱電モジュール |
KR1020197036581A KR102272631B1 (ko) | 2017-06-14 | 2018-05-09 | 열전모듈 |
US16/621,102 US11309474B2 (en) | 2017-06-14 | 2018-05-09 | Thermoelectric module |
CN201880039629.3A CN110770923A (zh) | 2017-06-14 | 2018-05-09 | 热电模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017116650A JP6909062B2 (ja) | 2017-06-14 | 2017-06-14 | 熱電モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019004012A JP2019004012A (ja) | 2019-01-10 |
JP6909062B2 true JP6909062B2 (ja) | 2021-07-28 |
Family
ID=64660838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017116650A Active JP6909062B2 (ja) | 2017-06-14 | 2017-06-14 | 熱電モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US11309474B2 (ja) |
JP (1) | JP6909062B2 (ja) |
KR (1) | KR102272631B1 (ja) |
CN (1) | CN110770923A (ja) |
WO (1) | WO2018230199A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2024039242A (ja) * | 2022-09-09 | 2024-03-22 | 株式会社Kelk | 熱電モジュール |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1104746C (zh) * | 1996-05-28 | 2003-04-02 | 松下电工株式会社 | 热电组件的制造方法 |
JP3241270B2 (ja) | 1996-06-25 | 2001-12-25 | 日本政策投資銀行 | 熱電変換装置 |
US6347521B1 (en) * | 1999-10-13 | 2002-02-19 | Komatsu Ltd | Temperature control device and method for manufacturing the same |
WO2007043562A1 (ja) * | 2005-10-14 | 2007-04-19 | Sharp Kabushiki Kaisha | インターコネクタ、それを用いる太陽電池ストリングおよびその製造方法、ならびに、その太陽電池ストリングを用いる太陽電池モジュール |
JP4832137B2 (ja) | 2006-03-29 | 2011-12-07 | 岡野電線株式会社 | 熱電変換モジュール |
US8440907B2 (en) * | 2006-04-14 | 2013-05-14 | Sharp Kabushiki Kaisha | Solar cell, solar cell string and solar cell module |
JP4888491B2 (ja) * | 2006-11-02 | 2012-02-29 | トヨタ自動車株式会社 | 熱電素子および熱電モジュール |
JP2012059831A (ja) * | 2010-09-07 | 2012-03-22 | Toyota Industries Corp | 配線基板の伝熱装置 |
JP2012253170A (ja) * | 2011-06-02 | 2012-12-20 | Toyota Industries Corp | 熱電モジュール |
JP5979883B2 (ja) * | 2012-01-16 | 2016-08-31 | 株式会社Kelk | 熱電素子およびこれを備えた熱電モジュール |
JP6266206B2 (ja) | 2012-12-05 | 2018-01-24 | 株式会社Kelk | 熱電モジュール |
JP2015056507A (ja) * | 2013-09-11 | 2015-03-23 | ヤマハ株式会社 | 熱電モジュール |
JP2015177048A (ja) * | 2014-03-14 | 2015-10-05 | 日立化成株式会社 | 熱電変換モジュール |
US9412929B2 (en) * | 2014-08-18 | 2016-08-09 | Panasonic Intellectual Property Management Co., Ltd. | Thermoelectric conversion module |
NO20141357A1 (no) * | 2014-11-12 | 2016-05-13 | Tegma As | Fremgangsmåte for forhåndsprosessering av halvledende, termoelektriske materialer for metallisering, sammenkobling og binding |
-
2017
- 2017-06-14 JP JP2017116650A patent/JP6909062B2/ja active Active
-
2018
- 2018-05-09 KR KR1020197036581A patent/KR102272631B1/ko active IP Right Grant
- 2018-05-09 CN CN201880039629.3A patent/CN110770923A/zh active Pending
- 2018-05-09 US US16/621,102 patent/US11309474B2/en active Active
- 2018-05-09 WO PCT/JP2018/017917 patent/WO2018230199A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2019004012A (ja) | 2019-01-10 |
US11309474B2 (en) | 2022-04-19 |
KR102272631B1 (ko) | 2021-07-05 |
CN110770923A (zh) | 2020-02-07 |
WO2018230199A1 (ja) | 2018-12-20 |
US20200168778A1 (en) | 2020-05-28 |
KR20200007878A (ko) | 2020-01-22 |
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