WO2008026728A1 - Silicium métallique et son procédé de fabrication - Google Patents
Silicium métallique et son procédé de fabrication Download PDFInfo
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- WO2008026728A1 WO2008026728A1 PCT/JP2007/067024 JP2007067024W WO2008026728A1 WO 2008026728 A1 WO2008026728 A1 WO 2008026728A1 JP 2007067024 W JP2007067024 W JP 2007067024W WO 2008026728 A1 WO2008026728 A1 WO 2008026728A1
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- Prior art keywords
- less
- metal silicon
- silicon
- purity
- rate
- Prior art date
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 98
- 239000010703 silicon Substances 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 97
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000007711 solidification Methods 0.000 claims abstract description 29
- 230000008023 solidification Effects 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 25
- 238000001816 cooling Methods 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 28
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000012770 industrial material Substances 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000002245 particle Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 239000005350 fused silica glass Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000011575 calcium Substances 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to metal silicon having a purity and strength suitable as general industrial materials or solar cell materials, and a method for producing the same. More specifically, it is made of a metal silicon ingot having a purity of 3N to 6N and an average crystal grain size of 1mm or more obtained by melting and purifying crude metal silicon, and is suitable for general industrial materials or solar cell materials.
- the present invention relates to a genus silicon and a method for producing the same.
- Metallic silicon is used in various materials depending on its purity. For example, 2% -purity metallic silicon is used as a raw material for alloys or semiconductor materials, and a metallic silicon of 6% or more is used for semiconductor devices, target materials, heat treatments, and the like. In addition, high purity polycrystalline silicon from 10N is used as a material for semiconductor materials and solar cells, and high purity single crystal silicon of 11N or higher is used as a semiconductor device material.
- metal silicon is lighter in weight and has better thermal conductivity than stainless steel, and thus can be used as a substitute for a stainless steel member in various devices.
- conventional metal silicon used as a semiconductor material has a purity of about 6% or more, and is generally used as an industrial material, for example, an alternative material for a stainless steel member or an alternative material for a quartz member. Purity is too high for use as a material, resulting in high cost.
- 2% purity metallic silicon used for alloy raw materials is not suitable as a general industrial material because its crystallinity is poor and it is difficult to obtain a reliable material strength.
- metallic silicon having an average crystal grain size force of less than S 1 mm has a low material strength and is not suitable as a substitute for a stainless steel member or a quartz member.
- metal silicon having a purity of about 2N generally has a low average life time, so its photoelectric conversion efficiency is low and it is not suitable for solar cell materials.
- Metal silicon with a purity of 6N or higher has high photoelectric conversion efficiency, but its purity is too high and the cost is high.
- Patent Documents 1 and 2 a method is known in which crude metal silicon is melted, unidirectionally solidified and purified to produce high-purity metal silicon (Patent Documents 1 and 2).
- Patent Documents 1 and 2 it is easy to melt and refine crude metal silicon to produce metal silicon having a purity of about 3N to 5N unless the solidification rate after melting and the cooling rate after solidification are appropriately controlled.
- the ingot is broken, it cannot be used as a general industrial material. For this reason, it has not been generally known to use metal silicon having a purity of about 3 N to 5 N as a general industrial material.
- Patent Document 1 JP-A-5-254817
- Patent Document 2 Japanese Patent Laid-Open No. 10-182135
- the present invention solves the above-described conventional problems, and relates to metal silicon having a purity suitable as a general industrial material, a solar cell material, and the like, and a method for producing the same.
- An object of the present invention is to obtain a metal silicon ingot having a suitable purity and an average crystal grain size by melting and purifying crude metal silicon.
- a low-purity metallic silicon and a method for manufacturing the same which solves the above-described problems, are provided by the following configuration.
- the metal silicon of the present invention is produced by refining molten crude metal silicon by unidirectional solidification, has a purity of 3N to 6N, and has an average crystal grain size of 1 mm or more.
- the molten crude silicon silicon contained in a container containing fine silica in the inner circumferential layer is unidirectionally solidified at a speed of lmm / min or less and then cooled to 200 ° C or less at a speed of 2 ° C / min or less. It may have a purity of 3N to 6N and an average crystal grain size of 1 mm or more.
- the content of iron and aluminum may be 0.05 to 0.00005 wt%, and the total content of other metal elements may be 0.03 wt% or less. The total content of the other metal elements may be preferably 0.01 wt% or less. Can be used as general industrial material or solar cell material.
- the molten crude metal silicon contained in a container containing fine silica in the inner peripheral layer is unidirectionally solidified at a speed of 1 mm / min or less, and further at a speed of 2 ° C / min or less.
- metallic silicon having a purity of 3N or more and 6N or less and an average crystal grain size of 1 mm or more is produced.
- the solidification rate may be 0.;! To lmm / min, and the cooling rate may be 0.;! To 2 ° C / min.
- the metal silicon of the present invention is manufactured by refining molten crude metal silicon by unidirectional solidification, and has a purity of 3N or more and 6N or less, so that it is relatively inexpensive unlike high-purity silicon for semiconductor materials. It can be obtained or manufactured in general, and can be suitably used for general industrial materials.
- the metal silicon of the present invention has, for example, a content of iron and aluminum of 0.05 to 0.00005 wt%, and a total content of other metal elements of 0.03 wt% or less, preferably 0. Since it is 01 wt% or less and below the purity for semiconductor materials, it can be produced at a lower cost than high-purity silicon for semiconductor materials and can be obtained at a relatively low cost.
- the metallic silicon of the present invention is produced by purifying molten crude metallic silicon by unidirectional solidification. Since the solidification rate and the cooling rate are controlled within a certain range, it is possible to obtain a metal silicon ingot without cracking! By processing this, it is possible to obtain a metal silicon member having a strength that can be used as a general industrial member in place of a stainless steel member or quartz member.
- the method for producing metal silicon according to the present invention uses a container for ingot containing fine silica in the inner peripheral layer, and melted crude metal silicon at a solidification rate of 1 mm / min or less, preferably 0 .;! To lmm / min.
- Metallic silicon is produced by solidification in one direction and further cooling to 200 ° C. or less at a cooling rate of 2 ° C./min or less, preferably 0.;! To 2 ° C / min.
- metallic silicon having characteristics suitable as general industrial materials or solar cell materials can be produced.
- the metallic silicon of the present invention is produced by refining molten crude metallic silicon by unidirectional solidification, has a purity of 3N (99.9%) or more and 6 to 99 (9999%) or less, and has an average grain size of 1 It is more than mm.
- molten crude metal silicon placed in a container containing fine silica in the inner peripheral layer is unidirectionally solidified at a speed of lmm / min or less, and subsequently 200 ° C at a speed of 2 ° C / min or less. It is manufactured by cooling to the following, and is a metallic silicon having a purity of 3N to 6N and an average crystal grain size of 1 mm or more.
- Molten crude metal silicon is generally used as an alloy material or a semiconductor material! /, And metal silicon having a purity of about 2N (99%) can be used.
- This metal silicon is put into an ingot container and heated and melted to form molten crude metal silicon.
- a container containing fine silica for example, fine fused silica sand having a particle size of 50 to 300 m
- fine silica for example, fine fused silica sand having a particle size of 50 to 300 m
- an ingot container provided with silicon nitride as a mold release agent on the inner peripheral surface is often used.
- High-purity metallic silicon used for semiconductor materials is easy to react with silicon nitride and has good peelability.
- Metallic silicon with a purity of about 3N to 6N decreases the peelability when impurities in the silicon react with silicon nitride.
- the problem is that the molten crude metal silicon sticks to the container at the part where the peelability is lowered, and the ingot is solidified during forging to cause a stress that prevents the shrinkage when the volume shrinks. There is.
- a crucible for producing an ingot having an inner layer containing fine fused silica sand on the inner surface is known (Japanese Patent Laid-Open Nos. 11-248363, 11-244988, and 2001-198648). Publication). These crucibles can prevent the silicon ingot from cracking due to the peeling of the inner surface due to the stress of silicon solidifying.
- JP-A-11 248363 discloses an inner silica layer containing fine fused silica particles having an average particle diameter of 50 to 300 m and an average particle diameter of 500 to 15 formed on the outer side thereof.
- a crucible for producing an ingot having a laminated structure with an outer silica layer containing 11 m of coarse fused silica particles is described.
- the fine fused silica particles in the inner layer and the coarse fused silica particles in the outer layer are bonded in the inner layer and in the outer layer by using a colloidal silica-containing slurry.
- JP-A-11-244988 describes a crucible for producing an ingot in which an inner silica layer containing fine fused silica particles having an average particle size of 50 to 300 m is formed on the inner surface of a graphite cage. Yes.
- the metal silicon of the present invention has an inner silica layer containing fine fused silica particles having an average particle diameter of 50 to 300 m as described above. Manufactured using a got container. In addition, when melt purification is performed using a container coated with a release agent containing silicon nitride, the silicon ingot breaks even if the solidification rate and cooling rate are controlled within the scope of the present invention (Comparative Example). Five).
- the metal silicon of the present invention is produced by controlling the solidification rate and cooling rate of the molten crude metal silicon to prevent cracking of the ingot. Specifically, the solidification rate is controlled to 1 mm / min or less, preferably 0. Further, the cooling rate is controlled to 2 ° C / min or less, preferably 0.;! ⁇ 2 ° C / min, and cooled to 200 ° C or less.
- the metal silicon of this invention is manufactured by the above.
- the ingot breaks (Comparative Example 3). Furthermore, even when the cooling rate is 2 ° C / min or less, the ingot breaks when the removal temperature is higher than 200 ° C, for example, 300 ° C (Comparative Example 4).
- the molten crude metal silicon is solidified unidirectionally at a solidification rate of lmm / min or less, preferably 0.;! ⁇ Lmm / min, and further a cooling rate of 2 ° C / min
- a solidification rate of lmm / min or less preferably 0.;! ⁇ Lmm / min
- a cooling rate of 2 ° C / min By cooling to 200 ° C. or less at min., preferably 0.;! to 2 ° C./min, an unbroken metal silicon ingot having a purity of 3N to 6N can be obtained.
- the total content of the other metal elements is preferably 0.01 wt% or less.
- Example 1 For example, in Example 1, 0.03 wt% of iron, 0.03 wt% of aluminum, 0.01 wt% of calcium, nao !; Kumu 0.001 wt%, Kajikumu 0.001 wt%, Kuguchimu 0. Metallic silicon containing 001 wt%, 0.
- Olw t% in Example 2, iron 0.003 wt%, aluminum 0.003 wt% %, Calcium 0.001 wt%, sodium 0.0001 wt%, potassium 0.0001 wt%, chromium 0.0001 wt%, metallic silicon containing 0.001 wt% copper, in Example 3, iron 0.0000 3 wt%, anoreminium 0.00003 wt%, Metallic silicon containing 0.001 wt% calcium, 0.0000 lwt% sodium, 0.00001 wt% potassium, 0.00001 wt% chromium, and 0.0001 wt% copper was obtained.
- the average lifetime of the metal silicon crystal is 2 mm, 4 mm, and 10 mm. sec, 0. S ⁇ sec, 1.0 sec, and the percentage of measured values in each part within the range of 20% to + 20% of the average lifetime is 55%, 60%, and 70%. Therefore, the photoelectric conversion efficiency is gradually increasing to 5%, 7%, and 10%.
- a container having an inner layer (thickness: 5 mm) containing fine fused silica particles of 50-30011 m and an internal volume of 1 liter (length lOcm ⁇ width lOcm ⁇ height 10 cm) was used.
- the internal volume is The same container containing silicon nitride on the inner surface was used.
- the molten crude metal silicon was solidified and cooled.
- the state of the metal silicon surface in the container was observed to determine the completion time of solidification, followed by cooling, and the surface temperature was measured to determine the take-out temperature.
- the cross section of the manufactured metal ingot was observed with a microscope, and the average crystal grain size was measured.
- Lifetime was measured in the height direction for metal silicon ingots using a lifetime measurement system (SEMILAB model WT-2000), and the average value was obtained. This average value is the average of the measured values of the central measurement part, which is distributed almost evenly for the metal ingot.
- Sunlight was applied, current and voltage were measured using a current / voltage measuring device, and the photoelectric conversion efficiency was obtained from the following formula.
- Isc Short circuit current (current when the voltage is 0V)
- Voc Open-circuit voltage (voltage when current is OA)
- Jsc Short-circuit current density (Isc divided by the area of the solar cell substrate)
- Comparative Example 1 the purity of the metal silicon is 2N, and the purification effect cannot be obtained.
- the average crystal grain size is as small as 0.5 mm
- the average life time is as short as 0 ⁇ 05 sec
- the proportion within the range of ⁇ 20% to + 20% of the average life time is also 20%. poor.
- the photoelectric conversion efficiency is also low at 1%.
- Comparative Examples 2 to 5 cracks occur in the metal silicon ingot in the solidification cooling step, and metal silicon having the desired physical properties cannot be obtained. Industrial applicability
- the metal silicon of the present invention has a purity of 3N or more and 6N or less, and has an average crystal grain size of 1 mm or more and no cracks.
- the average crystal grain size is large, it is highly suitable for use as a solar cell material and the like because photoelectric conversion efficiency can be obtained.
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Silicon Compounds (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/438,763 US7955583B2 (en) | 2006-08-31 | 2007-08-31 | Metallic silicon and method for manufacturing the same |
EP07806497A EP2058279A4 (en) | 2006-08-31 | 2007-08-31 | METAL SILICON AND METHOD FOR MANUFACTURING THE SAME |
CN2007800316981A CN101506097B (zh) | 2006-08-31 | 2007-08-31 | 金属硅及其制备方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006235775 | 2006-08-31 | ||
JP2006-235775 | 2006-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008026728A1 true WO2008026728A1 (fr) | 2008-03-06 |
Family
ID=39136009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/067024 WO2008026728A1 (fr) | 2006-08-31 | 2007-08-31 | Silicium métallique et son procédé de fabrication |
Country Status (5)
Country | Link |
---|---|
US (1) | US7955583B2 (ja) |
EP (1) | EP2058279A4 (ja) |
KR (1) | KR101074304B1 (ja) |
CN (1) | CN101506097B (ja) |
WO (1) | WO2008026728A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100178195A1 (en) * | 2007-06-08 | 2010-07-15 | Motoyuki Yamada | Method of solidifying metallic silicon |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110102301A (ko) * | 2008-12-01 | 2011-09-16 | 스미또모 가가꾸 가부시끼가이샤 | n 형 태양 전지용 실리콘 및 인 첨가 실리콘의 제조 방법 |
US9119309B1 (en) | 2009-12-15 | 2015-08-25 | SDCmaterials, Inc. | In situ oxide removal, dispersal and drying |
JP5676900B2 (ja) * | 2010-03-26 | 2015-02-25 | 三菱マテリアル株式会社 | 多結晶シリコンインゴットの製造方法 |
EP3919441B1 (en) * | 2019-03-05 | 2023-07-26 | Tokuyama Corporation | Chlorosilane producing method |
CN111591996B (zh) * | 2020-07-13 | 2022-11-29 | 昆明理工大学 | 一种利用硅铁合金制备工业硅的方法 |
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DE3220285A1 (de) * | 1982-05-28 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe |
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US4612179A (en) * | 1985-03-13 | 1986-09-16 | Sri International | Process for purification of solid silicon |
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- 2007-08-31 WO PCT/JP2007/067024 patent/WO2008026728A1/ja active Application Filing
- 2007-08-31 KR KR1020097003936A patent/KR101074304B1/ko active IP Right Grant
- 2007-08-31 CN CN2007800316981A patent/CN101506097B/zh active Active
- 2007-08-31 EP EP07806497A patent/EP2058279A4/en not_active Withdrawn
- 2007-08-31 US US12/438,763 patent/US7955583B2/en active Active
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JPH10120493A (ja) * | 1996-10-14 | 1998-05-12 | Kawasaki Steel Corp | 太陽電池用シリコンの鋳造方法 |
JPH10182135A (ja) | 1996-12-20 | 1998-07-07 | Kawasaki Steel Corp | シリコンの凝固精製方法 |
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US20100178195A1 (en) * | 2007-06-08 | 2010-07-15 | Motoyuki Yamada | Method of solidifying metallic silicon |
Also Published As
Publication number | Publication date |
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EP2058279A1 (en) | 2009-05-13 |
KR20090048474A (ko) | 2009-05-13 |
CN101506097A (zh) | 2009-08-12 |
KR101074304B1 (ko) | 2011-10-17 |
CN101506097B (zh) | 2011-06-29 |
US20090297425A1 (en) | 2009-12-03 |
EP2058279A4 (en) | 2012-01-25 |
US7955583B2 (en) | 2011-06-07 |
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