WO2008018336A1 - Module d'élément luminescent - Google Patents

Module d'élément luminescent Download PDF

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Publication number
WO2008018336A1
WO2008018336A1 PCT/JP2007/065050 JP2007065050W WO2008018336A1 WO 2008018336 A1 WO2008018336 A1 WO 2008018336A1 JP 2007065050 W JP2007065050 W JP 2007065050W WO 2008018336 A1 WO2008018336 A1 WO 2008018336A1
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WO
WIPO (PCT)
Prior art keywords
sealing
resin material
sealing resin
sealing material
light
Prior art date
Application number
PCT/JP2007/065050
Other languages
English (en)
Japanese (ja)
Inventor
Kouki Hatsuda
Hiroshi Samukawa
Original Assignee
Sony Chemical & Information Device Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Chemical & Information Device Corporation filed Critical Sony Chemical & Information Device Corporation
Publication of WO2008018336A1 publication Critical patent/WO2008018336A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a light emitting element module in which a light emitting element is sealed with a resin on a substrate, and a method for manufacturing the same.
  • LEDs light-emitting diodes
  • features such as low power consumption, small size, and light weight, and those sealed with resin are the power used in various display lamps in recent years.
  • white LEDs have been developed and their brightness has been increased, the application to backlight light sources, illumination light sources, signal lights, etc. for liquid crystal display panels has been rapidly progressing, and application to automotive headlights has also been developed. ing.
  • gel-type silicone resins are used for high-brightness LEDs.
  • this silicone resin the heat resistance is improved as compared with the epoxy resin, and the light resistance is improved. Further, since it is a gel type, deterioration of the chip due to thermal stress can be avoided. And force, while, gel-type silicone resin, after curing, has a base rattling on the surface, and is easily attached scratches immediately or surface Ya sticks Gomiya dust problems force s to use it as a surface layer .
  • a light emitting element module in which the light emitting element is sealed with resin! /, The light emitted from the light emitting element is prevented from being totally reflected at the interface between the sealing resin and air, and the light extraction efficiency is reduced. Therefore, the outer shape of the sealing material is made dome-shaped, and the lens function is given to the sealing material. ing.
  • a domed sealing material is formed by injection molding using a transparent resin such as a cyclic olefin copolymer, a gel type silicone resin is injected into this, and an LED chip is placed in the cavity inside. A fixed one has been proposed!
  • an LED bare chip is fixed to the recess of the base, and a gel type silicone resin is applied and cured on the LED bare chip.
  • an epoxy resin is filled in a mold that is hollow in a dome shape.
  • Patent Document 2 A method is known in which an LED sealed with a silicone resin is inserted over the epoxy resin and the epoxy resin in the mold is cured.
  • Patent Document 1 Japanese Patent Laid-Open No. 2000-150968
  • Patent Document 2 Japanese Patent Laid-Open No. 2003-31848
  • the sealing material has two layers, and the second sealing material (outside) is made of a material having a hardness that is equal to the tack force S. It solves the problem unique to silicone resin that it is easily scratched.
  • the present invention includes a first sealing material that directly seals a light emitting element such as an LED, and a second sealing material that seals the outside thereof. (1) preventing reflection at the interface between the first sealing material and the second sealing material, improving the light extraction efficiency from the light emitting device, and (2) sealing. Ensure that bubbles are not included in the stopper, and (3) make it possible to easily and compactly manufacture a light-emitting element module whose sealing material has a lens function without using a mold. For the purpose.
  • a light emitting element module in which a light emitting element such as an LED is sequentially sealed with a first sealing material and a second sealing material
  • the sealing resin material and the second sealing resin material are sequentially applied, and in a state where they are not completely cured, the interface between the two sealing resin materials is blurred, and then these are cured.
  • Light emitting element By using a module, the refractive index continuously changes at the blurred interface between the first sealing material and the second sealing material, so the first sealing material and the second sealing material Reflection at the interface can be prevented, thereby improving the light extraction efficiency.
  • bubbles can be removed by vacuum defoaming, and the substrate on which the light emitting element is mounted is treated with an oil repellent treatment.
  • the sealing resin material can be formed into a dome shape without using a mold and that the lens function can be imparted to the sealing material, and the present invention has been completed.
  • the present invention is a light emitting element module in which a first sealing material and a second sealing material are sequentially laminated on a light emitting element on a substrate, wherein the first sealing material and the second sealing material Provided is a light-emitting element module that is subjected to a strong and crushed treatment at the interface with the sealing material.
  • the present invention includes mounting a light emitting element on a substrate, and a first sealing resin material, which is an uncured material of the first sealing material, and an unsealed second sealing material.
  • the second sealing resin material which is a cured product, is applied in sequence, and annealing is performed at room temperature to 120 ° C for several minutes to several hours, thereby performing an interface between the first sealing resin material and the second sealing resin material.
  • a method for manufacturing a light emitting element module is provided, in which the first sealing resin material and the second sealing resin material are completely cured.
  • the light emitting element module of the present invention since the roughening treatment is applied to the interface between the first sealing material and the second sealing material that seals the light emitting element.
  • the refractive index of the first sealing material and the second sealing material changes continuously at the interface, and the light emitted from the light emitting element is the interface between the first sealing material and the second sealing material. It is possible to prevent reflection. Therefore, the light extraction efficiency of the light emitting element module can be improved.
  • the interface between the first sealing material and the second sealing material can be surely and easily blurred.
  • the first sealing resin material which is an uncured product of the first sealing material, is applied between the cured second sealing material and the base of the light emitting element. Since the first sealing resin material and the second sealing resin material are sequentially applied and then cured without being injected in between, even if bubbles occur in the first sealing resin material, the first sealing resin material and the second sealing resin material are cured. Air bubbles can be easily removed by vacuum defoaming before the sealing resin material is cured. [0016] In addition, on the surface of the substrate, an annular convex portion is provided in each of a region surrounding the peripheral portion of the first sealing material and a region surrounding the peripheral portion of the second sealing material, and the region surrounding the light emitting element. If the oil-repellent treatment is applied, it becomes possible to form the sealing resin material into a dome shape without using a mold, and further improve the light extraction efficiency of the light-emitting element module with a simple manufacturing method. That force S Kanakura.
  • FIG. 1 is a cross-sectional view of an LED module.
  • FIG. 2 is a cross-sectional view of the LED module.
  • FIG. 3 is a cross-sectional view of the LED module.
  • FIG. 4 is a cross-sectional view of the LED module.
  • FIG. 5 is a cross-sectional view of the LED module.
  • FIG. 6 is a cross-sectional view of the LED module.
  • FIG. 7 is a cross-sectional view of the LED module.
  • FIG. 8A is a plan view and a cross-sectional view of the LED module of Example 1 during the manufacturing process.
  • FIG. 8B is a plan view and a cross-sectional view of the LED module of Example 1 during the manufacturing process.
  • FIG. 8C is a plan view and a cross-sectional view of the LED module of Example 1 during the manufacturing process.
  • FIG. 8D is a cross-sectional view of the LED module of Example 1 during the manufacturing process.
  • FIG. 8E is a cross-sectional view of the LED module of Example 1 during the manufacturing process.
  • FIG. 8F is a cross-sectional view of the LED module of Example 1 during the manufacturing process.
  • FIG. 9A is a plan view and a cross-sectional view of the LED module of Example 2 during the manufacturing process.
  • FIG. 9B is a plan view of the LED module of Example 2 during the manufacturing process.
  • FIG. 9C is a plan view of the LED module of Example 2 during the manufacturing process.
  • FIG. 9D is a plan view and a cross-sectional view of the LED module of Example 2 during the manufacturing process.
  • FIG. 9E is a plan view and a cross-sectional view of the LED module of Example 2 during the manufacturing process.
  • FIG. 9F is a plan view and a cross-sectional view of the LED module of Example 2 during the manufacturing process.
  • FIG. 9G is a plan view and a cross-sectional view of the LED module of Example 2 during the manufacturing process.
  • FIG. 10 is a plan view of the LED module of Example 3.
  • FIG. 11 is a cross-sectional view of the evaluation module.
  • FIG. 12 is an explanatory diagram of a method for evaluating the degree of blurring at the interface.
  • FIG. 1 is a cross-sectional view of an LED module 40 that is an embodiment of the light-emitting element module of the present invention.
  • This LED module 40 is formed by sequentially laminating a first sealing material 31 and a second sealing material 32 on an LED bare chip 20 that is bonded and fixed to a base 1.
  • This first sealing material 31 It is characterized in that a blurring process is applied to the interface 33 between the first sealing material 32 and the second sealing material 32.
  • the interface 33 is subjected to a force treatment also means that there is no clear interface between the first sealing material 31 and the second sealing material 32, that is, the first sealing material. This means that the refractive index continuously changes at the blurred interface between the material 31 and the second sealing material.
  • reference numeral 7 denotes a lead electrode connected to the electrode terminal of the LED bare chip 20.
  • the LED bare chip 20 is first mounted on the substrate 1 by bonding and fixing, and then the first sealing material is not cured on the LED bare chip 20.
  • the first sealing resin material is applied to cover the LED bare chip 20, and then the second sealing resin material is completely cured on the first sealing resin material.
  • Apply the second sealing resin material which is an uncured material of the sealing material, and then perform annealing to blur the interface between the first sealing resin material and the second sealing resin material.
  • the first sealing resin material and the second sealing resin material are completely cured, and the LED module 40 And
  • the substrate 1 there is no particular limitation. It is possible to use an injection-molded body of engineering plastics such as ABS resin and polyphthalamide, which has been conventionally used as an LED substrate. A lead electrode and a heat sink can be built in the molded body. Further, as the substrate 1, a rigid substrate or a flexible substrate can be used instead of such a molded body.
  • annular convex portion 2 On the surface of the base body 1, it is preferable to form an annular convex portion 2 in a region surrounding the peripheral edge portion of the first sealing material 31 and the peripheral edge portion of the second sealing material 32. Thereby, it is possible to prevent the first sealing resin material and the second sealing resin material from flowing and spreading on the surface of the base 1.
  • the specific shape of the annular convex portion 2 is, for example, as a double stepped shape having a first vertical surface 2a and a second vertical surface 2b upstanding with respect to the bottom surface of the base 1, as shown in FIG.
  • the cross section is shown in FIG. 3 as a double stepped shape having a first inclined surface 2c and a second inclined surface 2d upstanding from the bottom surface of the substrate 1.
  • Triangular or rectangular annular protrusions 2e and 2f may be provided adjacent to each other as shown in FIG. 4. As shown in FIG. 4, the triangular or rectangular annular protrusions 2g and 2h are provided twice with a gap. May be. Further, as shown in FIG. 5, an annular convex portion 2i having a single slope may be provided. Among them, the annular convex portion 2 is preferably formed with a single slope as shown in FIG.
  • an oil repellent treatment layer 3 is provided in advance in the region surrounding the LED mounting portion on the surface of the substrate 1 before application of the first sealing resin material and the second sealing resin material, It is preferable to reduce the interfacial tension. Thereby, it is possible to prevent these sealing resin materials from flowing and spreading on the surface of the substrate 1.
  • this oil-repellent treatment is indispensable when using a substrate 1 that is flat and does not have an annular convex portion.
  • the first sealing material 31 and the second sealing material 32 are each formed into a dome shape (that is, a shield-like force is also a hemispherical shape) without using a mold, resulting in a force S possible.
  • the oil repellent treatment layer 3 can be provided by applying an oil repellent having a low surface tension to the surface of the substrate 1 and forming a film thereof.
  • a fluororesin is preferably used as the oil repellent, and this can be achieved by simply forming an oil repellent coating film by diluting it with a solvent, applying and drying it, and the force S.
  • Typical examples of the fluororesin include perfluoroalkyl acrylate or methacrylate (alkyl group having 6 to 9 carbon atoms) homopolymer. This homopolymer is used after being dissolved in a fluorinated solvent.
  • copolymers such as perfluoroalkyl acrylate and lauryl acrylate can be used.
  • This copolymer can be diluted using a general-purpose solvent such as toluene or methyl ethyl ketone.
  • the application region of the oil repellent on the surface of the substrate 1 can be an area surrounding the LED mounting region including the annular convex portion 2 so as not to be applied to the LED mounting region. Applying an oil repellent to the LED mounting area makes it difficult to bond and fix the LED bare chip to it. Also, when applied to the surface of the LED bare chip 20, the light extraction efficiency deteriorates because the refractive index of the oil repellent is low.
  • the first sealing resin material it is preferable that the cured product (that is, the first sealing material 31) is not hard. More specifically, the Shore A hardness is 70 or less. preferable. As a result, the thermal stress generated between the LED bare chip 20 and the first sealing material 31 in the LED module 40 can be relaxed, and the light emission life of the LED bare chip 20 can be greatly extended.
  • the lower limit of the hardness of the first sealing material 31 is not particularly limited, and may be a soft gel.
  • the viscosity of the first sealing resin material is preferably 50 Pa'S or less at 25 ° C, more preferably 10 Pa'S or less. This makes it difficult for bubbles to be generated when the first sealing resin material is applied onto the LED bare chip 20, and even if bubbles are generated, the bubbles are effectively removed by vacuum defoaming or the like. be able to.
  • the refractive index of the first sealing material 31 that is a cured product of the first sealing resin material is the refractive index of the LED bare chip substrate (in the case of a sapphire substrate 1. 76) and the refractive index of the second sealing material 32 are preferably set to 1.40-1.76. Therefore, as the refractive index of the first encapsulating resin material that is an uncured product, it is preferable to use a material having a refractive index lower than that of 0.01 to 0.03. This is because the refractive index usually increases by 0.0;! To 0.03 by curing.
  • the preferred resin type of the first sealing resin material and examples thereof include silicone resins, acrylic resins, methacrylic resins, urethane resins, and epoxy resins, and silicone resins, acrylic resins, and methacrylic resins are particularly preferable.
  • additives such as an antifoaming agent, a polymerization inhibitor, and a polymerization initiator can be added to the first sealing resin material as necessary.
  • a defoaming treatment is performed as necessary. That is, even when a low-viscosity resin is used as the first sealing resin material and an antifoaming agent is added, the stepped portion of the LED bare chip 20 itself, the vicinity of the joint portion of the LED bare chip 20 and the base 1, It is difficult to completely eliminate the generation of bubbles around the joint between the LED bare chip 20 and the electrode and around the bonding wire. Therefore, bubbles generated in the sealing resin or on the surface thereof are removed by defoaming treatment.
  • vacuum defoaming is preferable from the viewpoint of the defoaming effect.
  • the vacuum defoaming is a process in which after the first sealing resin material is applied, the foam is expanded and ruptured by applying a vacuum in a vacuum chamber or the like.
  • the first sealing resin material is applied onto the LED bare chip 20
  • the first sealing resin material is a cured product of the second sealing resin material (second sealing material). 32) It is covered with !!, so vacuum defoaming can be performed easily
  • the first sealing resin material has a viscosity of 5 Pa 'S (25 ° C).
  • the first sealing resin material is applied onto the LED bare chip 20 and then semi-cured.
  • semi-curing it becomes easy to make the application shape after applying the second sealing resin material on the first sealing resin material into a dome shape.
  • the semi-curing ends most of the shrinkage that occurs when the resin is cured, it is possible to minimize the occurrence of stress strain when the resin is completely cured later.
  • This semi-curing is carried out by curing at a lower temperature than the main curing, curing with a small amount of UV irradiation, shortening the curing time, etc.
  • the degree of semi-curing is not fluid. Degree is preferred That's right.
  • the second sealing material 32 is formed to have an exterior function and a lens function.
  • One of the important characteristics for lens function is to maximize the light extraction efficiency. Therefore, the second sealing material 32 is preferably formed in a dome shape, particularly a hemispherical shape.
  • the second sealing resin material has a viscosity
  • (25 ° C) is preferably 0 ⁇ ! ⁇ lOOOPa 'S. If the viscosity of the second sealing resin material is lower than this, the second sealing resin material is applied onto the first sealing resin material, depending on the application shape of the first sealing resin material. In this case, the second sealing resin material tends to flow and does not easily become hemispherical.
  • the second sealing resin material is formed on the surface of the base 1 in the same manner as when forming the first sealing resin material into a dome shape. It is preferable to provide the annular convex part 2b so as to surround the peripheral part of the resin, and it is preferable to perform an oil repellent treatment.
  • the oil repellent treatment does not necessarily have to be performed on both the peripheral edge of the first sealing resin material and the peripheral edge of the second sealing resin material. For example, as shown in FIG. You may give only to the peripheral part of sealing resin material. Also, if the sealing resin material has a high viscosity and the coating strength is low, the oil-repellent treatment may be omitted completely! /.
  • the refractive index of the second sealing material 32 increases the refractive index of the first sealing material 31 and the refractive index of the second sealing material 32 in order to increase the light extraction efficiency of the LED module 40. More specifically, it is preferable to design so as to reduce the difference between and within 0.035. If the difference in refractive index between the two encapsulants is large, reflection or refraction will occur at the interface between them, causing problems such as the inability to obtain the designed radiation characteristics and reduced light extraction efficiency.
  • the refractive index of the second sealing material 32 may be smaller or larger than the refractive index of the first sealing material 31. Therefore, the refractive index of the second sealing material 32 is more specifically 1.395-1.465 when the refractive index of the first sealing material 31 is 1.43, for example. Power to do S is preferable.
  • the second sealing material 32 has a rigidity that does not deform under normal use conditions after the second sealing material is cured. 30 or more is preferable. 50 or more is more preferable. Also, the surface is dry touch, and dust etc. It is necessary to be difficult.
  • Preferable examples of the resin component of the second sealing material resin material forming the second sealing material 32 include silicone resin, acrylic resin, methacrylic resin, urethane resin, epoxy resin, and cyclic olefin resin.
  • acrylic resins, methacrylic resins, and epoxy resins are preferable.
  • the second sealing resin material it is necessary to use a material whose interface with the first sealing resin material is sufficiently blurred by annealing. Therefore, as the first sealing resin material and the second sealing resin material, those satisfying at least one of the following conditions are selected.
  • One or more components included in the first sealing resin material and one or more components included in the second sealing resin material are compatible with each other.
  • At least one of the first sealing resin material and the second sealing resin material contains a compatibilizing agent.
  • compatibilizing agent (a) a graft polymer, a block comprising a component A compatible with the first sealing resin material and a component B compatible with the second sealing resin material
  • examples thereof include polymers and copolymers, (b) surfactants, and (c) silane coupling agents.
  • silicone resin and epoxy resin when the curing system of the first sealing resin material and the second sealing resin material do not react with each other (for example, epoxy resin is cured by hydrosilylation) In the case of curing with an acid anhydride), and without the addition of a compatibilizer, the interface between the first sealing material and the second sealing material cannot be sufficiently blurred by annealing.
  • Annealing is performed after laminating the first sealing resin material and the second sealing resin material and before curing them. As a result, the interface between the first sealing resin material and the second sealing resin material is strengthened, and there is no sudden change in the refractive index, preventing reflection at these interfaces and taking out light. Efficiency can be increased. [0050] It is important that the annealing be performed under the condition that the first sealing resin and the second sealing resin are not completely cured. Usually, it is performed at room temperature to 120 ° C. for several minutes to several hours, more preferably at 40 to 80 ° C. for 10 minutes to 1 hour, and particularly when radical curing is performed, for example, at a temperature of 60 ° C. Use the following lower temperature setting.
  • Complete curing of the first sealing resin material and the second sealing resin material after the annealing can be performed by UV curing, thermal radical curing, photooxidation curing, hydrosilylation curing, or the like.
  • a curing method that generates a gas or a solvent is not preferable.
  • the degree of blurring of the interface between the first sealing material and the second sealing material after complete curing can be evaluated as follows. As shown in Fig. 11, the light emitting element module is cut along the A-B side and A, one B 'side to produce an evaluation module 50, and as shown in Fig. 12, the light beam L0 is applied to the first sealing material. Light is projected so that the incident angle ⁇ force is 0 ° with respect to the second sealing material 32 and the interface 33 with 31. The incident light L0 is split into transmitted light L1 and reflected light L2 at the interface 33. The light dose of this reflected light L2 is measured. Here, in order to prevent reflection of the incident light L0 at the cut surface, the cut surface is formed to be perpendicular to the incident light L0.
  • the interface 33 does not exist at all, the reflected light L2 does not occur. However, as the interface 33 clearly exists, the amount of the reflected light L2 increases. Therefore, when the amount of light L2 reflected from the interface 33 with respect to the amount of incident light L0 is 5% or less, the interface 33 between the first sealing material 31 and the second sealing material 32 is sufficiently large. Evaluated as being blurred!
  • the difference in refractive index between the first sealing material and the second sealing material is preferably reduced to within 0.035, so that the incident angle ⁇ is 60 °. Then, total reflection does not occur.
  • the specific numerical value and the magnitude of the difference in refractive index between the first sealing material and the second sealing material are small. Regardless of the relationship, the amount of reflected light L2 relative to the amount of incident light L0 is 5% or less.
  • the light emitting device module of the present invention can take various forms.
  • the base body 1 and the LED bare chip 20 may not be directly joined, but the base body 1 and the LED bare chip 20 may be joined indirectly via a circuit board made of silicon or the like separately.
  • the LED bare chip 20 and the circuit board are bump-bonded such as a flip chip, and the circuit board and the substrate 1 are gold-bonded.
  • the gap may be filled with the first sealing material 31, but an underfill sealing resin is prepared separately, It may be filled with an underfill sealing resin.
  • an underfill sealing resin As the properties of the underfill sealing resin, it is preferable to have high thermal conductivity and heat resistance.
  • a silicone resin filled with alumina powder can be used.
  • a plurality of LED bare chips which may be appropriately provided with a reflecting plate, may be sealed in parallel on the surface of the substrate 1.
  • an EL element or the like can be provided.
  • the obtained first sealing resin material has a viscosity of 60 mPa'S (25 ° C) and a refractive index of 1.539, and is cured by irradiating it with a halogen lamp (integrated light quantity lj / cm 2 ).
  • the cured product had a Shore A hardness of 70.
  • 9,9-bis (4- (2-Atalyloxyethoxy) phenolene) fluorene (Osaka Gas Chemical Company, BPE FA) 50 parts by weight and isobornyl atylate 50 parts by weight were blended and polymerization started 1 part by weight of agent (Ciba-Geigy Specialty Chemicals, Darocur 1173) was added to make a second sealing resin material.
  • agent Ciba-Geigy Specialty Chemicals, Darocur 1173
  • the second sealing resin material obtained has a viscosity 450mPa 'S (25 ° C) , the refractive index 1.541, curing it irradiation with a halogen lamp (integrated light quantity lj / cm 2) to The cured product had a Shore A hardness of 97.
  • a base 1 A of 6 mm X 6 mm X 2 mm (thickness) is obtained, a hole with a diameter of 2 mm is formed in the center of the base 1 A, and a diameter of 2 mm is formed in the hole of the base 1 A.
  • a copper cylinder 4 having a thickness of 1.5 mm was fitted (FIG. 8A).
  • 0.75 mm wide and 0.3 mm deep triangular grooves 5a and 5b are dug in a ring shape on the upper surface of the base 1A, and a groove 0.75 mm wide and 0.3 mm deep is further dug. (FIG. 8B), the electrode 7a was fitted into the groove 6 (FIG. 8C).
  • the first sealing resin material 31 ⁇ is placed on the base 1A up to the inner triangular groove 5a using a syringe (FIG. 8D), air bubbles are removed by vacuum degassing, and the first sealing resin is again formed. Material 31 ⁇ was added, and UV was irradiated to 0.1J to be semi-cured.
  • the second sealing resin material 32 ⁇ is immediately placed on the first sealing resin material 31 ⁇ up to the outer triangular groove 5b (Fig. 8 ⁇ ) and annealed at 60 ° C for 10 minutes for the first sealing. Stops the interface 33 ⁇ between the sealing resin material 31 ⁇ and the second sealing resin material 32 ⁇ , and then continuously irradiates 1J UV to completely cure the first sealing resin material 31 ⁇ and the second sealing resin material 32 ⁇ .
  • LED module 41 was obtained (Fig. 8F).
  • Example 1 After the second sealing resin material 32 ⁇ was placed on the first sealing resin material 31 ⁇ , both of the sealing resin materials were completely cured immediately after annealing. An LED module was produced in the same manner as in Example 1.
  • the obtained first sealing resin material has a viscosity of 50 mPa'S (25 ° C) and a refractive index of 1.531, and is cured by irradiating it with a halogen lamp (integrated light quantity lj / cm 2 ).
  • the cured product had a Shore A hardness of 65.
  • the obtained second sealing resin material had a viscosity of 5000 mPa'S (25 ° C) and a refractive index of 1.565, and was cured by irradiating it with a halogen lamp (integrated light quantity lj / cm 2 ).
  • the cured product had a Shore A hardness of 97.
  • an LED module 42 having the LED bare chip 20 sealed with resin was obtained.
  • one side of the double-sided flexible substrate 1B made of polyimide was etched to form a circuit unit (4 mm ⁇ 4 mm) shown in FIG. 9A.
  • reference numerals 7b and 7c are electrodes, and the central electrode 7b is connected to the back electrode 7d through a through hole.
  • a reflective surface 8 is formed around the electrode 7b by vapor deposition of silver (FIG. 9B), and an oil repellent (3M, £ 0-1720) 3 is coated around the reflective surface 8 (Figure 9).
  • a blue LED bare chip 20 having both electrodes on one side was mounted on the etched surface of the flexible substrate 1B by etching and connected to the electrodes 7b and 7c (FIG. 9D).
  • the first sealing resin material 31o is placed directly on the flexible substrate IB with a syringe so that the diameter is 3 mm (Fig. 9E), and bubbles are removed by vacuum defoaming. Semi-cured by UV irradiation of 0.1 J.
  • the second sealing resin material 32 ⁇ is placed on the first sealing resin material 31 ⁇ so that its diameter becomes 3 ⁇ 75 mm (Fig.
  • Example 2 after the second sealing resin material 32 ⁇ was placed on the first sealing resin material 31 ⁇ , both of the sealing resin materials were completely cured immediately after annealing. An LED module was produced in the same manner as in Example 2.
  • the total amount of light extracted from this LED module was examined by measuring the total amount of light using an integrating sphere, and was 1.65 times that of the bare chip.
  • a flexible circuit board 1C was produced in which the same circuit units as in Example 2 were arranged in a total of 12 units, 3 in the vertical direction and 4 in the horizontal direction. As shown in FIG. 10, the LED bare chip 20 is mounted in each circuit unit, and the first sealing resin material and the second sealing resin material are sequentially arranged, annealed, and cured as shown in FIG. An LED module 43 in the form of an array was prepared.
  • the total amount of light extracted from each LED in the LED module 43 was 1.75 times the average of the bare chip.
  • the method for producing a light emitting element module of the present invention is useful as a method for resin-sealing light emitting elements such as LEDs, semiconductor lasers, EL elements, etc., and the light emitting element module obtained thereby is a flat panel. Used in various fields such as backlights, traffic lights, and optical communications.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un module d'élément luminescent (40) qui comprend une base (1), un élément luminescent (puce DEL nue (20)) disposé sur la base, et un premier agent encapsulant (31) et un second agent encapsulant (32) qui ont été superposés dans cet ordre sur l'élément. Afin d'empêcher la réflexion à l'interface (33) entre le premier agent encapsulant (31) et le second agent encapsulant (32), et donc d'améliorer l'efficacité de l'extraction de lumière de l'élément luminescent, l'interface (33) entre un premier matériau de résine d'encapsulation (31o) et un second matériau de résine d'encapsulation (32o) est rendu progressif avant que le premier matériau de résine d'encapsulation (31o) et le second matériau de résine d'encapsulation (32o) soient complètement durcis.
PCT/JP2007/065050 2006-08-07 2007-08-01 Module d'élément luminescent WO2008018336A1 (fr)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009103285A1 (fr) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Composant opto-électronique
WO2009121339A1 (fr) * 2008-03-31 2009-10-08 Osram Opto Semiconductors Gmbh Composant semiconducteur optoélectronique et procédé de fabrication d'un composant semiconducteur optoélectronique
WO2010021346A1 (fr) * 2008-08-20 2010-02-25 三菱化学株式会社 Dispositif émettant de la lumière à semi-conducteurs et son procédé de fabrication
WO2011057831A1 (fr) * 2009-11-13 2011-05-19 Tridonic Jennersdorf Gmbh Module de diodes électroluminescentes et procédé de fabrication correspondant
WO2012038164A1 (fr) * 2010-09-21 2012-03-29 Osram Opto Semiconductors Gmbh Composant électronique
WO2012157644A1 (fr) * 2011-05-16 2012-11-22 日亜化学工業株式会社 Dispositif électroluminescent et procédé de fabrication de ce dernier
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JP5328698B2 (ja) * 2010-03-02 2013-10-30 シャープ株式会社 表示装置
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JP2012023184A (ja) * 2010-07-14 2012-02-02 Sharp Corp 発光装置
DE102010031945A1 (de) * 2010-07-22 2012-01-26 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
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JP5968674B2 (ja) * 2011-05-13 2016-08-10 エルジー イノテック カンパニー リミテッド 発光素子パッケージ及びこれを備える紫外線ランプ
JP2013140848A (ja) * 2011-12-28 2013-07-18 Nitto Denko Corp 封止用シートおよび光半導体素子装置
KR101301991B1 (ko) * 2012-08-28 2013-08-30 공명국 액정고분자 수지저장벽을 가진 고신뢰성고출력발광다이오드패키지 및 그 제조방법
JP6197288B2 (ja) * 2012-12-27 2017-09-20 日亜化学工業株式会社 発光装置およびその製造方法
JP2014145946A (ja) * 2013-01-30 2014-08-14 Panasonic Corp 光電変換サブマウント基板
JP6182916B2 (ja) 2013-03-15 2017-08-23 日亜化学工業株式会社 発光装置の封止部材の取り外し方法
JP2014206572A (ja) * 2013-04-11 2014-10-30 パナソニック株式会社 光電変換サブマウント基板
JP2014206573A (ja) * 2013-04-11 2014-10-30 パナソニック株式会社 光電変換サブマウント基板
JP2017045807A (ja) * 2015-08-25 2017-03-02 デクセリアルズ株式会社 発光装置、及び発光装置の製造方法
JP6597135B2 (ja) * 2015-09-30 2019-10-30 日亜化学工業株式会社 発光装置
JP7053252B2 (ja) 2017-12-26 2022-04-12 日機装株式会社 半導体発光装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033517A (ja) * 2000-05-09 2002-01-31 Nichia Chem Ind Ltd 発光素子とその製造方法
JP2004087812A (ja) * 2002-08-27 2004-03-18 Sanyo Electric Co Ltd 発光体
JP2004343059A (ja) * 2003-04-24 2004-12-02 Nichia Chem Ind Ltd 半導体装置及びその製造方法
JP2006202952A (ja) * 2005-01-20 2006-08-03 Shin Etsu Chem Co Ltd シリコーン封止型ｌｅｄ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033517A (ja) * 2000-05-09 2002-01-31 Nichia Chem Ind Ltd 発光素子とその製造方法
JP2004087812A (ja) * 2002-08-27 2004-03-18 Sanyo Electric Co Ltd 発光体
JP2004343059A (ja) * 2003-04-24 2004-12-02 Nichia Chem Ind Ltd 半導体装置及びその製造方法
JP2006202952A (ja) * 2005-01-20 2006-08-03 Shin Etsu Chem Co Ltd シリコーン封止型ｌｅｄ

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WO2009121339A1 (fr) * 2008-03-31 2009-10-08 Osram Opto Semiconductors Gmbh Composant semiconducteur optoélectronique et procédé de fabrication d'un composant semiconducteur optoélectronique
US8563998B2 (en) 2008-03-31 2013-10-22 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component
WO2010021346A1 (fr) * 2008-08-20 2010-02-25 三菱化学株式会社 Dispositif émettant de la lumière à semi-conducteurs et son procédé de fabrication
WO2011057831A1 (fr) * 2009-11-13 2011-05-19 Tridonic Jennersdorf Gmbh Module de diodes électroluminescentes et procédé de fabrication correspondant
WO2012038164A1 (fr) * 2010-09-21 2012-03-29 Osram Opto Semiconductors Gmbh Composant électronique
US9029901B2 (en) 2010-09-21 2015-05-12 Osram Opto Semiconductors Gmbh Electronic component
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WO2012157644A1 (fr) * 2011-05-16 2012-11-22 日亜化学工業株式会社 Dispositif électroluminescent et procédé de fabrication de ce dernier
CN107768502A (zh) * 2011-05-16 2018-03-06 日亚化学工业株式会社 发光装置及其制造方法
US10090446B2 (en) 2011-05-16 2018-10-02 Nichia Corporation Light emitting device and method for manufacturing the same
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EP2562830A3 (fr) * 2011-08-24 2013-12-25 LG Innotek Co., Ltd. Emballage de dispositif électroluminescent
US9397274B2 (en) 2011-08-24 2016-07-19 Lg Innotek Co., Ltd. Light emitting device package
CN110088077A (zh) * 2017-01-17 2019-08-02 株式会社尼康 (甲基)丙烯酸酯化合物、光学用树脂添加剂、光学元件和光学装置
EP3572396A4 (fr) * 2017-01-17 2020-11-18 Nikon Corporation Composé (méth)acrylate, additif pour résine optique, élément optique et dispositif optique
US11142636B2 (en) 2017-01-17 2021-10-12 Nikon Corporation (Meth)acrylate compound, additive for optical resin, optical element, and optical device
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