Classifications

• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/03—Use of materials for the substrate
  • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/002—Details
  • H01G4/005—Electrodes
  • H01G4/008—Selection of materials
  • H01G4/0085—Fried electrodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/002—Details
  • H01G4/018—Dielectrics
  • H01G4/06—Solid dielectrics
  • H01G4/08—Inorganic dielectrics
  • H01G4/12—Ceramic dielectrics
  • H01G4/129—Ceramic dielectrics containing a glassy phase, e.g. glass ceramic
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/30—Stacked capacitors
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/01—Frequency selective two-port networks
  • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
  • H03H2001/0021—Constructional details
  • H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/46—Manufacturing multilayer circuits
  • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/46—Manufacturing multilayer circuits
  • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
  • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
  • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/43—Electric condenser making
  • Y10T29/435—Solid dielectric type

Definitions

• the present invention relates to a ceramic multilayer device and a method for manufacturing the same.
• Multilayer dielectric filters are formed by appropriately arranging internal electrodes (conductor metal) that form capacitors and strip lines in the inner layer portion of the ceramic multilayer body, which is a dielectric ceramic force.
• ⁇ r relative dielectric constant
• the dielectric ceramic material includes low loss in a high frequency region, that is, a high Q value and a small frequency temperature characteristic TCF.
• the Q value is the reciprocal of the dielectric loss tan ⁇ . This makes it possible to achieve a high-performance filter with low insertion loss and excellent temperature stability.
• Ag If used, it must be sinterable at a temperature below the melting point of Ag (961 ° C).
• a Ba-Re-Ti-O-based material (where Re is a rare earth element) is added with various additives or glass for lowering the sintering temperature. ing.
• a dielectric ceramic having a high dielectric constant, a high Q value, and a small TCF can be obtained while lowering the sintering temperature (see, for example, Patent Documents 1, 2, and 3).
• Patent Document 1 Japanese Patent Laid-Open No. 8-55518
• Patent Document 2 JP-A-11-209172
• Patent Document 3 Japanese Patent No. 2786977
• the present invention suppresses the reaction between the dielectric ceramic and the Ag electrode as much as possible, and also contains Si and Zn as components of glass and additives, or a composite oxide containing them.
• Si and Zn as components of glass and additives, or a composite oxide containing them.
• the ceramic multilayer device uses Ag as an internal electrode of a ceramic laminate including at least ceramic, Si-containing glass, and a force, and the distance between the Ag electrode forces is within 5 ⁇ m or less.
• AZB which is the ratio of Si element concentration B in the range where the distance between element concentration ⁇ and Ag electrode is more than 5 ⁇ m, is 2 or less.
• the ceramic multilayer device according to the present invention uses Ag as an internal electrode of a ceramic laminate comprising at least ceramic, Si-containing glass, and ZnO, and the distance from the Ag electrode is 5 ⁇ m.
• ⁇ element concentration C in the following range and the distance from the Ag electrode is less than 5 ⁇ m CZD force which is the ratio of Zn element concentration D in the range away from 5 ⁇ m
• the method for manufacturing a ceramic multilayer device according to the present invention is characterized in that the oxygen concentration during firing of the ceramic multilayer device is set to 10 vol% or less.
• a ceramic multilayer device using Ag as an internal electrode in a dielectric ceramic that can be sintered at a low temperature of around 900 ° C and has a high relative dielectric constant and Q value. Even if formed, the reactivity with Ag during sintering can be kept low, so that a high Q value can be maintained as a device, and low loss can be achieved. As a result, it is possible to stably obtain a ceramic multilayer device that is small and has excellent characteristics and little variation in characteristics.
• FIG. 1 is an exploded perspective view of a green sheet laminate in an embodiment of the present invention.
• FIG. 2 is a cross-sectional view of a multilayer ceramic device according to an embodiment of the present invention.
• FIG. 3 is an enlarged view of the vicinity of the internal electrode of the ceramic multilayer device in one embodiment of the present invention.
• rare earth oxides such as Sm 2 O may be used. Also, some of the Nd is replaced with other rare earth
• Substitution with an element is also possible.
• the above powder and pure water were mixed in a ball mill for 18 hours. After mixing, the slurry was dried, placed in an alumina crucible, and calcined at a temperature of 1200 ° C to 1400 ° C for 2 hours. The calcined powder was roughly crushed and then pulverized and dried with the above-described ball mill to obtain the first component powder.
• H BO Al (OH), MgO, BaCO, CaCO, SrCO, La O, Li CO, ZnO, etc.
• the raw materials were weighed so as to have the composition described below. These powders are mixed with a V-shaped blender, then placed in platinum or a platinum rhodium crucible, melted at a temperature of 1400 ° C to 1600 ° C, rapidly cooled with a twin roller, and glass cullet ( glass cu llet). The obtained cullet was pulverized with a ball mill for 8 hours and dried to obtain a powder of the second component.
• the synthesized second component is a Si-alkaline earth metal La—O-based glass whose composition is SiO force 33-46 wt%, BaO 30-37 wt%, La O force 3 ⁇ 4-12 wt.
• the BaO may be CaO, MgO, SrO or the like.
• Al 2 O, Li 0, B 2 O, ZnO and the like may be contained. Above composition range
• Precipitation of crystal phases such as 2 4 10) increases the Q value of the sintered material.
• the inclusion of La is characterized by low viscosity at high temperatures, which results in increased fluidity of the glass and facilitates liquid phase sintering. Further, here, even glass other than the glass having the above glass composition system can be used as long as it exhibits a similar effect.
• ZnO as a third component was further added to the mixed powder by 5 parts by weight with respect to the mixed powder 100.
• the mixture was added and wet-mixed and pulverized with a ball mill to prepare pulverized powder.
• ZnO can also be added to the glass as the second component. By doing so, it becomes possible to lower the soft spot of the glass itself, which contributes to low temperature sintering.
• the third component may not be added.
• the ceramic composition can be sintered at a temperature close to Oppm / ° C and about 900 ° C.
• a binder such as polybutyral or acrylic resin, a plasticizer, and an organic solvent are added and mixed and dispersed to obtain a ceramic slurry.
• This ceramic slurry was applied on a base film such as a PET film by a doctor blade method or a die coating method to produce a ceramic Darin sheet.
• a desired electrode pattern is printed by screen printing using Ag paste, and a desired number of layers are laminated and thermocompression bonded to form a green sheet laminate having an electrode pattern on the inner layer or surface layer. Formed.
• the sintered laminate By firing this laminate in an oxygen-containing atmosphere of 10 vol% or less and at a temperature of 900 ° C to 940 ° C, the sintered laminate has a width of 2.5 mm, a length of 2. Omm, and a thickness of 1 mm. A device was formed.
• For firing atmosphere N, Ar, CO, O, H, etc.
• FIG. 1 shows an example of the stack structure of this device, in which the stripline electrode 3 is sandwiched between ceramic green sheets 1 that are dielectric layers, and the capacitor is used for input / output coupling or frequency adjustment with the stripline electrode 3.
• An example of a multilayer dielectric filter having a triplate structure with a built-in input / output electrode 4 for the purpose of forming, etc. was shown.
• a band-pass filter is formed by field coupling, and these electrodes 2, 3, 4 etc. are all embodiments of the internal electrode according to the present invention.
• the stripline electrode 3 has the same shape, the Q thickness of the resonator increases and the loss as a filter decreases as the thickness becomes as large as possible.
• the thickness of the dielectric layer is increased, cracks may occur in the dielectric body due to the difference in the coefficient of thermal expansion from the dielectric layer, and a gap may be formed between the dielectric layer and the internal electrode.
• the electrode thickness is preferably 15 ⁇ m or more and 35 ⁇ m or less.
• the shield electrode 2 is preferably made as thin as possible in contrast to the stripline electrode.
• the role of the shield electrode is to shield the entire filter electromagnetically and prevent changes in filter characteristics due to external influences. Therefore, a very large area is required due to the above properties. Therefore, if the thickness of the electrode is large, the ceramic liner sheet cannot absorb the electrode thickness at the time of laminating and crimping, resulting in poor lamination, which often causes delamination after sintering.
• the ceramic multilayer device according to the present invention when the thickness of the shield electrode after sintering is as thin as 7 m, it is confirmed that there is no delamination after sintering and a sufficient shielding effect as the device is obtained. did it .
• the electrode thickness is preferably 1 ⁇ m or more and 10 ⁇ m or less! /.
• a plurality of such ceramic laminate samples were prepared by changing the oxygen concentration during sintering.
• the prepared sample was cross-polished to obtain a wavelength dispersive type X-ray microanalyzer (WDS) point.
• WDS wavelength dispersive type X-ray microanalyzer
• FIG. 3 shows an enlarged view of the vicinity of the electrode 3 in FIG. 2 and an example of an analysis site 8 by WDS.
• the number of analysis points 8 was 5 in each of a range of 5 m or less from the electrode edge and a range of 5 ⁇ m away.
• the analysis location at this time shall be selected so that an effective average value of the secondary phase concentration can be obtained in the region of 5 m or less and 5 m or more from the end of the electrode.
• the measured WDS analysis results showed that Si! /, And the distance from the Ag electrode to the average Si element concentration A at a distance of 5 ⁇ m or less from the Ag electrode was more than 5 ⁇ m.
• the ratio of the average Si element concentration B at each position is expressed as AZB.
• the ratio of the average Zn element concentration C at the position where the distance from the Ag electrode is 5 ⁇ m or less and the average Zn element concentration D at the position where the distance from the Ag electrode is more than 5 ⁇ m CZD Expressed in
• the values of AZB ratio and CZD ratio are calculated from the average value of the five analysis points.
• the AZB ratio, CZD ratio, etc. are indices that represent the uniformity of the distribution of the secondary phase.
• Table 1 shows the relationship of the Si element concentration ratio AZB to the oxygen concentration during firing, and the relationship between the filter loss minimum value (Top loss) and the oxygen concentration.
• Table 2 also shows the relationship between the Zn concentration ratio CZD value relative to the oxygen concentration during sintering, and the relationship between the filter top loss and the oxygen concentration.
• the ratio of Si element concentration ⁇ ⁇ ⁇ ⁇ at a distance of 5 ⁇ m or less from the Ag electrode to the ratio of Si element concentration ⁇ ⁇ ⁇ ⁇ at a position where the distance between the Ag electrode force is less than 5 ⁇ m AZB is 2 or less.
• the filter shows good characteristics as a filter with a small top loss.
• AZB is greater than 2
• the top loss of the filter deteriorates by about 0.3 dB or more compared to the case of AZB of 2 or less.
• the distance between the Zn element concentration C and the Ag electrode force at a distance of 5 ⁇ m or less from the Ag electrode is less than 5 ⁇ m.
• the top loss of the filter deteriorated by about 0.3 dB or more compared to the case of 4 or less when the ratio of Zn element concentration D at the specified position was larger than the value of CZD.
• the oxygen concentration at this time was 10 vol% or less.
• the present invention uses Ag as an internal electrode, and suppresses the reactivity with Ag in a ceramic laminated device having a dielectric ceramic force consisting of ceramic and glass containing Si, and segregates Si near the electrode. By controlling, it is possible to stably produce devices with high, low Q value and low loss with high yield, which is very important in forming devices such as filters used in high frequency range. Useful.

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• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Chemical & Material Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Ceramic Engineering (AREA)
• Inorganic Chemistry (AREA)
• Materials Engineering (AREA)
• Compositions Of Oxide Ceramics (AREA)
• Production Of Multi-Layered Print Wiring Board (AREA)
• Control Of Motors That Do Not Use Commutators (AREA)

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• 2006
  • 2006-03-15 JP JP2006070599A patent/JP4967388B2/ja not_active Expired - Fee Related
• 2007
  • 2007-03-06 WO PCT/JP2007/054281 patent/WO2007119312A1/ja not_active Ceased
  • 2007-03-06 CN CNA200780008539XA patent/CN101401495A/zh active Pending
  • 2007-03-06 US US12/161,901 patent/US7826196B2/en not_active Expired - Fee Related
  • 2007-03-06 EP EP07737831A patent/EP1986481A4/en not_active Withdrawn

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