WO2007074734A1 - Liquide de polissage ne contenant pas de grains abrasifs et procédé de polissage cmp - Google Patents

Liquide de polissage ne contenant pas de grains abrasifs et procédé de polissage cmp Download PDF

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Publication number
WO2007074734A1
WO2007074734A1 PCT/JP2006/325625 JP2006325625W WO2007074734A1 WO 2007074734 A1 WO2007074734 A1 WO 2007074734A1 JP 2006325625 W JP2006325625 W JP 2006325625W WO 2007074734 A1 WO2007074734 A1 WO 2007074734A1
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Prior art keywords
copper
cmp polishing
polishing liquid
load
water
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PCT/JP2006/325625
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English (en)
Japanese (ja)
Inventor
Katsumi Mabuchi
Haruo Akahoshi
Masanobu Habiro
Takafumi Sakurada
Yutaka Nomura
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Hitachi Chemical Co., Ltd.
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Application filed by Hitachi Chemical Co., Ltd. filed Critical Hitachi Chemical Co., Ltd.
Priority to CN2006800493464A priority Critical patent/CN101346805B/zh
Priority to JP2007551933A priority patent/JPWO2007074734A1/ja
Publication of WO2007074734A1 publication Critical patent/WO2007074734A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Definitions

  • the present invention relates to an abrasive-free polishing liquid and a CMP polishing method (a mechanical polishing method), and more particularly to a polishing liquid used for CMP polishing used in a wiring formation process of an electronic circuit such as a semiconductor device and the like.
  • the present invention relates to a CMP polishing method.
  • Patent Document 3 a water-insoluble copper compound and a soluble copper compound are formed on a copper wiring
  • Patent Document 4 adds an amino acid
  • Patent Document 5 describes iron ( III) It describes that it contains compounds
  • Patent Document 6 describes aluminum, titanium, chromium, iron, edge It is described that the polishing rate can be increased by containing a polyvalent metal such as copper, nickel, copper, zinc, germanium and zirconium.
  • a chelating agent such as BTA
  • a protective film is also formed on a portion to be polished, so that the polishing rate is extremely reduced.
  • various additives have been studied.
  • the organic polymer include polybulal alcohol, polyacrylamide, polyacrylic acid such as polyacrylic acid, acrylate, polybutyl ester such as polyvinyl acetate, and polyallylamine.
  • Patent Document 4 uses a method in which an inhibitor and an amino acid are used in combination.
  • Patent Document 9 uses an aminoacetic acid or amidosulfuric acid and a protective film forming agent such as BTA. It describes a method for taking a non-oxy acid having a boxyl group and a protective film forming agent.
  • a heterocyclic compound (first complexing agent) that forms a water-insoluble complex with copper and copper forms a poorly water-soluble or soluble complex with copper, and one or more ligands are formed after complex formation.
  • second complexing agents are described.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2001-210611
  • Patent Document 2 Japanese Patent Laid-Open No. 2001-269859
  • Patent Document 4 Japanese Unexamined Patent Publication No. 2000-133621
  • Patent Document 5 Japanese Patent Laid-Open No. 10-163141
  • Patent Document 6 Japanese Patent Application Laid-Open No. 2001-269859
  • Patent Document 8 Japanese Patent Laid-Open No. 2002-299292
  • Patent Document 10 Japanese Unexamined Patent Publication No. 2000-336345
  • a CMP polishing liquid used by mixing with an oxidizing agent during polishing comprising a copper antifungal agent, a water-soluble polymer, a pH adjusting agent capable of forming a complex with copper, and water.
  • a CMP polishing liquid characterized by being substantially free of abrasive grains is provided.
  • the present invention includes an acid proofing agent, a copper antifungal agent, a water-soluble polymer, a pH adjusting agent capable of forming a complex with copper, and water.
  • the present invention provides a chemical polishing method for an electronic circuit containing copper, which is characterized by the inclusion.
  • article means “substantially does not contain the barrel” means alumina barrel (eg, brown alumina abrasive, white alumina abrasive, single crystal alumina) Abrasive grains), carbonized abrasive grains (eg, black carbide abrasive grains, green carbonized abrasive grains), zirconia alumina abrasive grains and super-abrasive grains (eg, diamond, CBN).
  • alumina barrel eg, brown alumina abrasive, white alumina abrasive, single crystal alumina
  • Abrasive grains eg, carbonized abrasive grains (eg, black carbide abrasive grains, green carbonized abrasive grains), zirconia alumina abrasive grains and super-abrasive grains (eg, diamond, CBN).
  • the CMP polishing liquid of the present invention comprises a copper antifungal agent, a pH adjusting agent capable of forming a complex with copper, a water-soluble compound and water, and is mixed with an oxidizing agent at the time of use. If this abrasive is substantially free of gun particles, and preferably completely free of gun particles, problems such as erosion due to particles scraped off by the gun particles, which has been a problem with conventional CMP polishing liquids, are eliminated. It can be solved.
  • the water-soluble polymer is preferably at least one selected from a polymer having a carboxyl group, a polymer having a sulfone group, and a polymer containing nitrogen.
  • polyacrylic acid, polyacrylic acid salt, copolymer of acrylic acid and acrylate ester, and copolymer power of acrylic acid and acrylamide are also at least one selected.
  • the water-soluble polymer having a sulfone group is at least one selected from the salt strength of an amine compound polymer having a sulfone group and an amine compound polymer having a sulfone group.
  • the water-soluble polymer containing nitrogen is at least one selected from polyvinylpyrrolidone, polyethyleneimine, and polyacrylamide power.
  • the water-soluble polymer is preferably at least one water-soluble polymer selected from a polymer having a carboxyl group, a polymer having a sulfone group, and a polymer power containing nitrogen.
  • the chemical polishing method according to the present invention includes an oxidizing agent, a copper antifungal agent, a water-soluble polymer, a pH adjusting agent capable of forming a complex with copper, and water, and substantially does not contain abrasive grains. ! / ⁇ Chemical polishing of copper under a load of 10g / cm 2 or less and chemical polishing under a load exceeding 10g / cm 2 in CMP polishing liquid. In particular, it is desirable to polish while adjusting the load so as to minimize dating.
  • the composition of the polishing slurry for CMP of the present invention is at least (1) an oxidizing agent (peroxide-hydrogen, etc.) and (2) copper is dissolved.
  • Compound (organic acid and Z or inorganic acid) that forms a complex with copper together with (3) Under load rotation and under no load rotation! / Dissolution inhibitor that suppresses copper dissolution (such as BTA Copper antifungal agent) and (4) under load rotation
  • the basic composition is to contain a compound (water-soluble polymer) that promotes copper dissolution and suppresses copper dissolution under no-load rotation.
  • the above solutions (1) and (2) to (4) are prepared separately and mixed immediately before use.
  • Examples of the inorganic acid include phosphoric acid and pyrophosphoric acid
  • examples of the organic acid include carboxylic acid.
  • the carboxylic acids include monocarboxylic acid, formic acid, acetic acid, dicarboxylic acid, oxalic acid, maleic acid, malonic acid, succinic acid, oxycarboxylic acid, tartaric acid, citrate, malic acid, and benzoic acid, which is an aromatic carboxylic acid.
  • amino acids, aminoamino sulfates and their salts, glycine, and aspartic acid are also effective. These contents vary depending on the pH to be adjusted.
  • a shape 3 in which a portion corresponding to the normal wiring portion is depressed is shown. .
  • a polishing liquid 5 (polishing liquid) is supplied from the nozzle 6 between the pad 4 and the copper film 2.
  • the copper 2 and the pad 4 are not in contact with each other in the recessed wiring part, and the pad 4 and the copper 2 are not in the part other than the wiring part. In contact.
  • the device shown in (b) was devised.
  • (a) shows the overall configuration of the apparatus, and (b) is an enlarged view of part A of (a).
  • the dissolution rate of copper was determined as the exchange current density.
  • the rotating shaft 20 of the rotating electrode 19 having the copper electrode 13 is attached to the motor 10 having the rotating speed control mechanism 11 and pressed against the pad.
  • the load applied to the pad is measured using a scale 14, and the load applied to the copper electrode 13 is adjusted using a link mechanism 16 fixed to a stand 17 installed under the scale.
  • the addition of a water-soluble polymer that is one of the components of the CMP polishing liquid makes it possible to significantly reduce the amount of dishing.
  • the function of this water-soluble polymer is that when a load is applied and under no-load rotation (corresponding to the case where copper is not in contact with the node), as with the antifungal agent, The dissolution of copper is suppressed by the key.
  • under load rotation corresponding to the case where copper is in contact with the node
  • it has been found that the copper dissolution rate is improved at the part where copper is in contact with the pad.
  • water-soluble polymer having such a function it has been found that at least one water-soluble polymer selected from a polymer having a carboxyl group, a polymer having a sulfone group, and a polymer containing nitrogen is effective. It was. Another feature of such a water-soluble polymer is that it suppresses the dissolution of copper when there is no load, but suppresses the dissolution of copper by the copper antifungal agent when coexisting with the copper antifungal agent. It has also become clear that it has the effect of reducing the effect. It is not clear why such characteristics appear in water-soluble polymers, especially ionic polymers.
  • the CMP polishing liquid of the present invention makes it possible to achieve both a high CMP polishing rate and suppression of dicing, and to form a highly reliable wiring. [0049]
  • the present invention will be described in detail by way of examples. The following evaluations were performed for Examples 1 to 14 and Comparative Examples 1 to 6.
  • a silicon substrate on which a 1 ⁇ m thick copper foil was formed was used as the substrate.
  • a polyurethane resin having closed cells was used as a polishing pad.
  • the relative speed between the substrate and the polishing surface plate was set to 36 mZmin. Load, it was 300gZcm 2.
  • the polishing rate during CMP was determined by converting the difference in film thickness of copper foil before and after CMP from the electrical resistance value. For the amount of dipping, a groove with a depth of 0.5 m is formed on the insulating film, and copper is embedded by a known sputtering method and electroplating method (Fig. La).
  • the amount of reduction of the wiring metal part relative to the insulating part was calculated from the surface shape of the stripe pattern part in which the wiring metal part width of 100 m and the insulating part width of 100 m were alternately arranged using a step gauge.
  • the exchange current density of copper under the load rotation of lOgZcm 2 in this polishing liquid is 10 .: AZcm 2 and less than twice the exchange current density of copper under no-load rotation (5.55 AZcm 2 ) It is.
  • the exchange current density of copper under a load rotation of 150 g / cm 2 is 195 AZcm 2, which is more than 5 times the dissolution rate under no load.
  • Example 1 instead of malic acid used in Example 1 as the copper solubilizer, oxalic acid was used as the oxidizing agent, 2.5M hydrogen peroxide, and 0.8 wt% benzotriazole (B TA as the antifungal agent (protective film forming agent)). ), And CMP was performed using a polishing liquid having a polyacrylic acid strength of 0.4 wt% as a water-soluble polymer. The addition amount of the copper solubilizer is adjusted so as to be a predetermined ⁇ ( ⁇ 1.8). As shown in Table 1, good results were obtained for both the polishing rate and dishing.
  • the exchange current density of copper under a load rotation of lOgZcm 2 in this polishing liquid is 5.23 AZcm 2, which is less than twice the exchange current density of copper under no load rotation (4.68 AZcm 2 ). .
  • the exchange current density of copper under load rotation 150GZcm 2 is 63.
  • a 2 AZcm 2 is more than five times greater than the dissolution rate under no load.
  • Example 1 instead of malic acid used in Example 1 as a copper solubilizer, phosphoric acid, which is an inorganic acid, is used as an acidifying agent, 2.5M hydrogen peroxide, and 0.7 wt% as an antifungal agent (protective film forming agent).
  • CMP was performed using a benzotriazole of 0.4 wt% polyacrylic acid as a water-soluble polymer. The amount of copper solubilizer added is adjusted to a predetermined pH (pH 2.0).
  • Example 5 Instead of malic acid used in Example 1 as the copper solubilizer, pyrophosphoric acid, which is an inorganic acid, is used as an oxidizing agent, 2.5M hydrogen peroxide, and as an antifungal agent (protective film forming agent), 0.3 wt% CMP was performed using zotriazole, a polishing solution with 0.2 wt% polyacrylic acid as a water-soluble polymer. The amount of copper solubilizer added is adjusted to a predetermined pH (pH 2.3). As shown in Table 1, good results were obtained for both the polishing rate and dishing.
  • a predetermined pH pH 2.3
  • exchange current density of copper under the load rotation of lOg / cm 2 in this polishing liquid is 35.1 AZcm 2, which is 2 of the exchange current density of copper (20.7 ⁇ AZcm 2 ) under no load rotation. Is less than double.
  • exchange altering current density of copper under load rotation 150GZcm 2 is 267 AZcm 2, is the dissolution rate of 5 times or more under no load
  • Malic acid was used as the copper solubilizer, 2.5M hydrogen peroxide as the oxidizing agent, and 0.5wt% quinaldic acid as the antifungal agent (protective film forming agent) instead of the BTA shown in Example 1 in water.
  • CMP was carried out using 0.2 wt% of a polyacrylamide polishing solution as a high molecular weight polymer.
  • the addition amount of the copper solubilizer is adjusted so as to be a predetermined ⁇ ( ⁇ 1.50). As shown in Table 1, good results were obtained for both the polishing rate and dishing.
  • the exchange current density of copper under the load rotation of lOgZcm 2 in this polishing liquid is 10.
  • Example 1 instead of malic acid used in Example 1 as a copper solubilizer, oxalic acid was used as an oxidizing agent, and 2.5 M potassium persulfate (KSO) was used as an oxidizing agent in place of peroxyhydrogen as shown in Example 1. ⁇
  • KSO potassium persulfate
  • Example 1 instead of malic acid used in Example 1 as a copper solubilizer, pyrophosphoric acid, an inorganic acid, 2.5M hydrogen peroxide as an oxidizing agent, and 0.8 wt% as an antifungal agent (protective film forming agent) CMP was performed using BTA as a water-soluble polymer and a polishing liquid composed of 0.3 wt% polyacrylamide. Adjust the amount of copper solubilizer so that it reaches the specified pH (pH 2.0). As shown in Table 1, good results were obtained for both the polishing rate and dishing. Exchange current density of copper under load rotation of LOgZcm 2 in the polishing liquid is 4.18 is AZcm 2, 2 times the exchange current density of copper in no-load rotation under (3.
  • Example 1 instead of malic acid used in Example 1 as the copper solubilizer, maleic acid was used as the oxidizing agent, 2.5M hydrogen peroxide as the oxidizing agent, and 0.9 wt% BTA as the antifungal agent (protective film forming agent).
  • CMP is carried out using a polishing liquid composed of 0.8% by weight polyethyleneimine as a polymer. It was. The amount of copper solubilizer added is adjusted to a predetermined pH (pH 2.0). As shown in Table 1, good results were obtained for both the polishing rate and dishing.
  • the exchange current density of copper under the load rotation of lOgZcm 2 in this polishing liquid is 4.18 ⁇ A / cm 2, which is less than twice the exchange current density of copper under no load rotation (1. AZcm 2 ) It is.
  • the exchange current density of copper under load rotation 150GZcm 2 is 62. a 3 ⁇ AZcm 2, is more than five times greater than the dissolution rate under no load.
  • the exchange current density of copper under load rotation of lOgZcm 2 in this polishing liquid is 10.9 AZcm 2, which is 2 of the exchange current density of copper under non-load rotation (9.82 ⁇ A / cm 2 ). Is less than double.
  • the exchange current density of copper under load rotation 150GZcm 2 is 234 AZcm 2, is more than five times greater than the dissolution rate under no load.
  • the exchange current density of copper under the load rotation of lOg / cm 2 in this polishing liquid is 3.59 AZcm 2
  • the exchange current density of copper under the no-load rotation (2. 09 A / cm 2 ) Less than 2 times.
  • the exchange current density of copper under a load rotation of 150 g / cm 2 is 201 ⁇ AZcm 2, which is more than 5 times the dissolution rate under no load.
  • Nitric acid that does not form a complex with copper as a copper solubilizer, 2.5M hydrogen peroxide as an oxidizing agent, 0.5wt% benzotriazole as an antifungal agent (protective film forming agent), 0 as a water-soluble polymer CMP was performed using a polishing solution consisting of 2 wt% polybulurpyrrolidone.
  • the addition amount of the copper solubilizer is adjusted so as to achieve a predetermined pH (pH 2.0).
  • a different part from an Example is the kind of copper dissolving agent. As shown in Table 2, the force when polishing speed was good Dating was large and the force did not satisfy the specified value.
  • the exchange current density of copper under no-load rotation in this polishing liquid was 37.4 / z AZcm 2
  • the exchange current density of copper under load rotation was 95.5 / z AZcm 2 and rapidly increased to more than twice the exchange current density of copper under no-load rotation.
  • Exchange current density of copper under load rotation 150GZcm 2 is 274 AZcm 2 or more, 5 times or more of the exchange current density of copper in no-load rotation under.
  • hydrochloric acid that does not form a complex with copper, 2.5M hydrogen peroxide as an oxidizing agent, 0.5wt% benzotriazole as an antifungal agent (protective film forming agent), 0 as a water-soluble polymer CMP was performed using a polishing solution consisting of 2 wt% polybulurpyrrolidone.
  • the addition amount of the copper solubilizer is adjusted so as to achieve a predetermined pH (pH 2.0).
  • a different part from an Example is the kind of copper dissolving agent. As shown in Table 2, the force when polishing speed was good Dating was large and the force did not satisfy the specified value.
  • CMP was performed using malic acid as a copper solubilizer, 2.5M hydrogen peroxide as an oxidizing agent, and a polishing solution having a polyacrylic acid power of 0.4wt% as a water-soluble polymer.
  • the addition amount of the copper dissolution agent so that the predetermined P H (pH2. 0) is adjusted. Since no antifungal agent is added, the exchange current density of copper under no-load rotation is significantly higher than in other comparative examples and examples. In this comparative example, unlike the case where other antifungal agents are added, the exchange current density of copper is reduced by applying a load (under load rotation). Therefore, the polishing rate was considerably larger than the specified value and showed a value, but the dateing was large and did not satisfy the specified value.
  • CMP is performed using malic acid as a copper dissolving agent, 2.5M hydrogen peroxide as an oxidizing agent, 0.5wt% benzotriazole as an antifungal agent (protective film forming agent), and a powerful polishing liquid. did.
  • the amount of copper solubilizer added is adjusted to a predetermined pH (pH 2.0). The difference from Example 1 is that no water-soluble polymer is added. Under no-load rotation, VTA suppresses copper dissolution, so the exchange current density of copper is small! /, Under load rotation with a kana load (lgZcm 2 ) applied, BTA easily desorbs from the copper force, so the exchange current density of copper increases rapidly as the applied load increases.
  • Example 2 instead of malic acid used in Example 1 as a copper solubilizer, oxalic acid, 2.5M hydrogen peroxide as an oxidizing agent, 0.2wt% benzotriazole as an antifungal agent (protective film forming agent), CMP was performed using 0.2 wt% of a polyacrylic acid polishing solution as a water-soluble polymer.
  • the addition amount of the copper solubilizer is adjusted so as to be a predetermined ⁇ ( ⁇ 1.8).
  • the difference from Example 3 is that the concentration of the water-soluble polymer is higher than the concentration of the antifungal agent.
  • Table 2 when a slight load (lgZcm 2 ) is applied, the exchange current density of copper under load rotation increases rapidly.
  • the water-soluble polymer has the effect of promoting the dissolution of copper under load rotation, so that the concentration of the water-soluble polymer is relatively higher than the concentration of the antifungal agent.
  • the exchange current density of copper increases when a strong load is applied. In such a case, the polishing rate is good, but the amount of dishing is slightly increased.
  • composition that reduces the rate of change of the exchange current density of copper in the low load range is (1) an organic acid or inorganic acid that has the effect of dissolving copper and can form a complex with copper, (
  • FIG. 2 is a conceptual diagram of an exchange current density measuring device under a polishing load.
  • FIG. 3 is a graph showing the load dependence of the dissolution rate of copper in various CMP polishing liquids. ⁇ 4] Graph showing the relationship between copper antifungal concentration and water-soluble polymer concentration and flatness.

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Abstract

La présente invention concerne un liquide de polissage CMP qui est mélangé avec un agent oxydant lorsqu'il est utilisé pour polir. Ce liquide de polissage CMP contient un agent antirouille au cuivre, un polymère soluble dans l’eau, un agent d’ajustement de pH et de l’eau, et ne contient sensiblement aucun grain abrasif. Grâce à l’utilisation d’un tel liquide de polissage CMP, la déformation pendant le polissage chimique du cuivre peut être supprimée efficacement, ceci permettant de former un circuit à haute fiabilité. Il est préférable que les teneurs en agent antirouille, en polymère soluble dans l’eau et en agent oxydant soient respectivement de 0,1-5% en poids, de 0,05-5% en poids et de 0,01-5M pour 1 litre du liquide de polissage CMP, et que l'agent d’ajustement de pH soit contenu dans une quantité suffisante pour ajuster le pH du liquide CMP à 1,5-2,5.
PCT/JP2006/325625 2005-12-26 2006-12-22 Liquide de polissage ne contenant pas de grains abrasifs et procédé de polissage cmp WO2007074734A1 (fr)

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CN2006800493464A CN101346805B (zh) 2005-12-26 2006-12-22 不含磨料的研磨液及cmp研磨方法
JP2007551933A JPWO2007074734A1 (ja) 2005-12-26 2006-12-22 砥粒フリー研磨液及びｃｍｐ研磨方法

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JP2010069550A (ja) * 2008-09-17 2010-04-02 Jsr Corp 回路基板の製造に用いる化学機械研磨用水系分散体、回路基板の製造方法、回路基板および多層回路基板
CN102015210A (zh) * 2008-04-23 2011-04-13 新东工业株式会社 输送装置及喷丸加工装置
JPWO2018174008A1 (ja) * 2017-03-23 2020-04-16 株式会社フジミインコーポレーテッド 研磨用組成物

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KR20140012135A (ko) 2011-04-26 2014-01-29 아사히 가라스 가부시키가이샤 비산화물 단결정 기판의 연마 방법
KR20140076566A (ko) 2011-10-07 2014-06-20 아사히 가라스 가부시키가이샤 탄화규소 단결정 기판 및 연마액
US11043396B2 (en) * 2018-07-31 2021-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polish slurry and method of manufacture

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