WO2007040081A1 - Dispositif de fabrication semi-conducteur monocristallin et procede de fabrication - Google Patents

Dispositif de fabrication semi-conducteur monocristallin et procede de fabrication Download PDF

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Publication number
WO2007040081A1
WO2007040081A1 PCT/JP2006/318960 JP2006318960W WO2007040081A1 WO 2007040081 A1 WO2007040081 A1 WO 2007040081A1 JP 2006318960 W JP2006318960 W JP 2006318960W WO 2007040081 A1 WO2007040081 A1 WO 2007040081A1
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WIPO (PCT)
Prior art keywords
heater
single crystal
crucible
crystal semiconductor
heaters
Prior art date
Application number
PCT/JP2006/318960
Other languages
English (en)
Japanese (ja)
Inventor
Tetsuhiro Iida
Yutaka Shiraishi
Junsuke Tomioka
Original Assignee
Komatsu Denshi Kinzoku Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Komatsu Denshi Kinzoku Kabushiki Kaisha filed Critical Komatsu Denshi Kinzoku Kabushiki Kaisha
Priority to US11/992,510 priority Critical patent/US8241424B2/en
Priority to KR1020087010256A priority patent/KR101391057B1/ko
Priority to JP2007538706A priority patent/JP5343272B2/ja
Priority to DE112006002595.3T priority patent/DE112006002595B4/de
Publication of WO2007040081A1 publication Critical patent/WO2007040081A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Definitions

  • the present invention relates to an apparatus and a manufacturing method for manufacturing a single crystal semiconductor.
  • FIG. 3 shows an example of the configuration of a conventional single crystal bow I raising apparatus 1.
  • a quartz crucible 3 is provided in the single crystal pulling vessel 2, that is, the CZ furnace 2.
  • polycrystalline silicon (Si) is heated and melted.
  • the pulling mechanism 4 pulls the single crystal silicon 6 from the silicon melt 5 in the quartz crucible 3 by the CZ method.
  • the quartz crucible 3 is rotated by the rotating shaft 9.
  • argon (Ar) gas is supplied to the single crystal pulling container 2 and exhausted together with the evaporated substance outside the container 2 to remove the evaporated substance from the container 2 and clean it.
  • the argon gas supply flow rate is set for each process in a batch.
  • a heat shielding plate 8a gas rectifying cylinder for shielding from a heat source is provided.
  • the distance between the lower end of the heat shielding plate 8a and the melt surface 5a is set as appropriate.
  • oxygen is dissolved in the single crystal silicon 6 that has been pulled and grown.
  • Oxygen dissolves from the quartz crucible 3 into the silicon melt 5 and is taken into the single crystal silicon 6 when the single crystal silicon 6 is pulled up.
  • the oxygen concentration in the single crystal silicon 6 has a significant influence on the characteristics of the element and the device, and also has a significant influence on the yield in the manufacturing process of the element and the device. Elements and devices require different oxygen concentrations depending on their types. Therefore, manufacturing single crystal silicon requires a process that can handle various oxygen concentrations. At the same time, the more uniform the oxygen concentration is in the crystal growth direction, the more parts that match the oxygen concentration required for the device and device. Therefore, expanding the control range of oxygen concentration throughout the crystal can improve the yield of single crystal silicon. It becomes possible.
  • a single heater 10 is provided in an annular shape.
  • the heater 10 includes a plus electrode 11 and a minus (earth) electrode 12, and heat is generated when a voltage is applied between these electrodes, and the melt 5 in the quartz crucible 3 is heated.
  • the electric power supplied to the heater 10 the amount of heat generated by the heater 10 changes, thereby changing the temperature of the quartz crucible 3, and the behavior of oxygen eluted from the quartz crucible 3 and taken into the single crystal silicon 6 Changes.
  • the amount of heat generated by the heater 10 affects the oxygen concentration in the single crystal silicon 6.
  • Patent Document 1 discloses a heater device in which heaters are provided in two upper and lower stages on the side surface of a quartz crucible.
  • Patent Document 2 discloses a heater device in which a heater is provided on each of a side surface and a bottom surface of a quartz crucible.
  • Patent Document 3 heaters are provided in two upper and lower sides of the side surface of the quartz crucible, respectively, and the ratio of electric power supplied to each heater is limited to a predetermined range. An invention for controlling the oxygen concentration is described.
  • Patent Document 4 heaters are provided on the upper and lower three stages of the side surface of the quartz crucible, the electric resistance of each heater is made different, and a common power supply power is supplied to each heater.
  • the invention describes that the oxygen concentration of single crystal silicon is controlled by varying the amount of heat generated in the heater.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 62-153191
  • Patent Document 2 Japanese Patent No. 2681115
  • Patent Document 3 Japanese Patent No. 3000923
  • Patent Document 4 Japanese Patent Laid-Open No. 2001-39792
  • the following method for controlling the oxygen concentration by a method other than the heater has already been implemented and is publicly known.
  • the above method 1) has a low yield of single crystal silicon in which the control range of the oxygen concentration of single crystal silicon is narrow.
  • the method 2) described above is difficult to manufacture at a low cost a semiconductor product that is extremely expensive due to the introduction of the magnetic field generator and the costs associated with its maintenance and management.
  • the method for controlling the oxygen concentration of single crystal silicon using a plurality of heaters can control the oxygen concentration of single crystal silicon somewhat wider than the method of 1) above.
  • the yield of single crystal silicon is also improved slightly.
  • the cost is not as high as the method 2) above.
  • the temperature in the vertical direction of the quartz crucible is adjusted by adjusting the ratio of the power supplied to the plurality of heaters. Actively change the distribution. This changes the dissolution rate of the quartz crucible, which is the oxygen source, and changes the convection of the melt that transports the dissolved oxygen to the single crystal silicon. As a result, the temperature distribution in the growth direction of the single crystal silicon changes, and the oxygen concentration of the single crystal silicon can be changed.
  • Patent Document 3 is a method of limiting the ratio of the power supplied to each heater within a predetermined range, and naturally the temperature in the growth direction of single crystal silicon.
  • the change range of the distribution is defined by the power ratio within the predetermined range, and the temperature distribution cannot be changed greatly.
  • the control range of the oxygen concentration of single crystal silicon is It cannot be said that the area is sufficiently large, and the yield of semiconductor products is not satisfactory.
  • the resistance value is varied for each heater and the amount of heat generated is varied for each heater.
  • the change range of the temperature distribution in the growth direction of single crystal silicon is as follows: It is determined by the height of each heater and the number of heaters, and the temperature distribution cannot be changed greatly. For this reason, the control range of the oxygen concentration of single crystal silicon is not sufficiently wide, and the yield of semiconductor products is not satisfactory.
  • the present invention has been made in view of such a situation, and when controlling the oxygen concentration of single crystal silicon using a plurality of heaters, the temperature distribution of the quartz crucible can be changed, The issue to be solved is to improve the yield of semiconductor products by further expanding the control range of the oxygen concentration of single crystal silicon.
  • the first invention is:
  • the heater is a plurality of heaters provided at respective positions in the vertical direction of the crucible, and each heater is supplied with electric power and energized independently. It consists of a conductor that generates heat by
  • the resistance value in each part of the heater should be adjusted so that the amount of heat generated in the lower part of the heater is relatively smaller than that in the upper part of the heater.
  • the second invention is:
  • the heater is a plurality of heaters provided at respective positions in the vertical direction of the crucible, and each heater is supplied with electric power and energized independently. It consists of a conductor that generates heat by For the heater located on the lower side, the resistance value in each part of the heater should be adjusted so that the amount of heat generated is relatively lower in the upper part of the heater than in the lower part of the heater.
  • the third invention provides
  • the heater is a plurality of heaters provided at respective positions in the vertical direction of the crucible, and each heater is supplied with electric power and energized independently. It consists of a conductor that generates heat by
  • the resistance value in each part of the heater is adjusted so that the amount of heat generated in the lower part of the heater is relatively smaller than that in the upper part of the heater
  • the resistance value in each part of the heater should be adjusted so that the amount of heat generated is relatively lower in the upper part of the heater than in the lower part of the heater.
  • the fourth invention is the first invention, the second invention, the third invention,
  • the current passing cross-sectional area of the heater is different between the upper part of the heater and the lower part of the heater.
  • a fifth invention is the fourth invention, wherein:
  • the current passage cross section of the heater is adjusted by the width of the current passage or the thickness of the current passage.
  • a sixth invention is the first invention, the second invention, the third invention, the fourth invention, or the fifth invention, wherein the plurality of heaters are provided at two positions in the vertical direction of the crucible.
  • the upper heater is formed such that a part of the current flow path enters a position below the position corresponding to the upper end position of the lower heater, and the lower heater Part of the current flow path is formed so as to enter a position above the position corresponding to the lower end position of the upper heater. It is characterized by.
  • the seventh invention provides
  • a crucible that melts the raw material of the single crystal semiconductor and a heater around the crucible that heats the raw material in the crucible are placed in the chamber, and the seed crystal is immersed in the melted raw material to pull up the single crystal.
  • the heaters are a plurality of heaters provided at respective positions in the vertical direction of the crucible, and each heater is composed of a conductor that is supplied with power independently and generates heat when energized,
  • the eighth invention provides
  • a crucible that melts the raw material of the single crystal semiconductor and a heater around the crucible that heats the raw material in the crucible are placed in the chamber, and the seed crystal is immersed in the melted raw material to pull up the single crystal.
  • the heaters are a plurality of heaters provided at respective positions in the vertical direction of the crucible, and each heater is composed of a conductor that is supplied with power independently and generates heat when energized,
  • the single crystal semiconductor is manufactured by adjusting the resistance value in each part of the heater so that the amount of heat generated in the upper part of the heater is relatively smaller than that in the lower part of the heater.
  • the ninth invention provides
  • a crucible for melting the raw material of the single crystal semiconductor and a heater for heating the raw material in the crucible around the crucible are arranged in the chamber, and the seed crystal is immersed in the melted raw material.
  • the heaters are a plurality of heaters provided at respective positions in the vertical direction of the crucible, and each heater is composed of a conductor that is supplied with power independently and generates heat when energized,
  • the single crystal semiconductor is manufactured by adjusting the resistance value in each part of the heater so that the amount of heat generated in the upper part of the heater is relatively smaller than that in the lower part of the heater.
  • the tenth invention is the seventh invention, the eighth invention, the ninth invention,
  • the current passage cross section of the heater is different between the upper part and the lower part of the heater.
  • the eleventh invention is the tenth invention
  • the current passage cross section of the heater is adjusted by the width of the current passage or the thickness of the current passage.
  • the twelfth invention is the seventh invention, the eighth invention, the ninth invention, the tenth invention, or the eleventh invention, wherein the plurality of heaters are two heaters provided at respective positions in the vertical direction of the crucible.
  • the upper heater is formed such that a part of the current flow path enters a position below the position corresponding to the upper end position of the lower heater. Part of the current flow path is formed so as to enter a position above the position corresponding to the lower end position of the upper heater.
  • Oxygen in a single crystal is generally known to depend on the amount of quartz crucible force, which is the oxygen incorporated into the silicon melt, and the amount of oxygen eluted from the bottom inner surface of the quartz crucible. It has been. In other words, the higher the temperature at the bottom of the quartz crucible, the greater the amount of elution, and the higher the concentration of oxygen taken into the single crystal, and vice versa. The oxygen concentration is low.
  • the width of the current flow path is smaller in the width c2 at the lower portion of the heater than the width cl at the upper portion of the heater. It is configured to be wide.
  • the current passage cross-sectional area of the upper side heater 10 is larger in the lower part of the heater than in the upper part of the heater, and accordingly, the resistance value is smaller in the direction S in the lower part of the heater than in the upper part of the heater, The lower part of the heater generates a relatively small amount of heat.
  • the lower side heater 20 is configured such that the width of the current flow path is wider in the width c2 at the upper portion of the heater than the width cl at the lower portion of the heater.
  • the current passage cross-sectional area of the lower heater 20 on the side surface is larger in the upper part of the heater than in the lower part of the heater, and the resistance value is accordingly smaller in the upper part of the heater than in the lower part of the heater.
  • the upper part generates relatively less heat.
  • the present invention As a result, according to the present invention, as shown in FIG. 8, power is supplied at a predetermined power ratio (a ratio between about 1 to 3 in the figure) with respect to the lower side heater 20 and the upper side heater 10. It can be seen that the temperature distribution range at the bottom of the quartz crucible 3 is larger than in the conventional example. Therefore, by adjusting the power ratio, the spread of the temperature distribution at each position in the vertical direction of the quartz crucible 3, that is, at each position in the growth direction of the single crystal silicon 6, is further expanded compared to the conventional example. Thus, the control range of the oxygen concentration of the single crystal silicon 6 is further expanded.
  • a predetermined power ratio a ratio between about 1 to 3 in the figure
  • the resistance value in each part of the heater is adjusted so that the amount of heat generated is relatively lower in the lower part of the heater than in the upper part of the heater.
  • the upper and lower heaters are The resistance value is adjusted so that the amount of generated heat is the same in each section.
  • the resistance value in each part of the heater is adjusted so that the amount of heat generated in the upper part of the heater is relatively smaller than that in the lower part of the heater.
  • the resistance value is adjusted so that the heating value is the same between the upper and lower heaters.
  • the amount of heat generated in each part of the heater is adjusted by adjusting the current passing cross-sectional area of the heater (fourth invention, fifth invention).
  • the upper heater is configured such that a part of the current flow path enters a position below a position corresponding to the upper end position of the lower heater.
  • the lower heater is formed such that a part of the current flow path enters a position above the position corresponding to the lower end position of the upper heater.
  • the amount of heat generated in the upper region of the entire heaters 10 and 20 and the amount of heat generated in the lower region of the entire heaters 10 and 20 are reduced compared to the amount of heat generated in the entire lower region of the heaters 10 and 20. be able to.
  • the seventh to twelfth inventions are inventions of a method for producing a single crystal semiconductor using the single crystal semiconductor production apparatus of the first invention to the sixth invention.
  • FIG. 1 is a side sectional view showing a configuration of a single crystal semiconductor manufacturing apparatus in which a heater according to an embodiment is incorporated.
  • FIG. 2 is a cross-sectional view showing the configuration of the heater of Example 1.
  • FIG. 3 is a side cross-sectional view showing the configuration of a single crystal semiconductor manufacturing apparatus incorporating a conventional heater.
  • FIG. 4 is a cross-sectional view showing a configuration of a heater of a reference example.
  • FIG. 5 is a cross-sectional view showing the configuration of the heater of Example 2.
  • FIG. 6 is a cross-sectional view showing the configuration of the heater of Example 3.
  • FIG. 7 is a cross-sectional view showing the configuration of the heater of Example 4.
  • FIG. 8 is a comparison diagram of the temperature distribution range at the bottom of the quartz crucible when the heater of the present invention and the conventional heater are used.
  • Fig. 9 Fig. 9 (a) is a graph showing the relationship between the crystal constant diameter part length and the oxygen concentration of single crystal silicon, and Fig. 9 (b) shows the growth of single crystal silicon corresponding to Fig. 9 (a). It is a figure showing the length of yield in a direction.
  • Fig. 1 (a) is a sectional view showing a configuration of the single crystal pulling apparatus 1 of the embodiment in a side view!
  • the heater of the embodiment is incorporated in the single crystal bow I raising apparatus 1.
  • a single crystal pulling apparatus 1 according to the embodiment includes a CZ furnace (chamber) 2 as a single crystal pulling vessel.
  • a quartz crucible for melting a polycrystalline silicon raw material and storing it as a melt 5 is provided.
  • the quartz crucible 3 is provided.
  • the quartz crucible 3 is covered with a graphite crucible 7 on the outside.
  • side side upper stage heaters 10 and side side lower stage heaters 20 are provided on the side surfaces of the crucibles 3 and 7 to heat and melt the polycrystalline silicon material in the quartz crucible 3.
  • the side upper stage heater 10 and the side lower stage heater 20 are respectively arranged at respective positions of the upper and lower stages along the vertical direction of the side face of the quartz crucible 3.
  • FIG. 1 (b) is a view of the upper side heater 10 and the lower side heater 20 from the top.
  • the upper side heater 10 and the lower side heater 20 are formed in an annular shape along the outer periphery of the quartz crucible 3. Is formed.
  • annular bottom heater may be provided on the bottom of the crucibles 3 and 7 in the lower stage of the side lower heater 20.
  • Fig. 2 is a cross-sectional view of the upper side heaters 10 and 20 as viewed from the direction of arrow A in Fig. 1 (b).
  • the side upper stage heater 10 and the side lower stage heater 20 are supplied with electric power independently. It is composed of a conductor that generates heat when energized. That is, an independent power source is provided for each heater 10, 20, and each heater 10, 20 has a positive electrode 11, 21, and a negative (ground) electrode 12, 22.
  • an independent power source is provided for each heater 10, 20, and each heater 10, 20 has a positive electrode 11, 21, and a negative (ground) electrode 12, 22.
  • the voltage force of the power source for the side lower heater 20 is applied between the plus electrode 21 and the minus electrode 22 of the heater 20, whereby a current flows through the side lower heater 20 to generate heat.
  • the amount of heat generated by the lower side heater 20 is adjusted, and the lower heating amount of the quartz crucible 3 is controlled.
  • the side upper stage heater 10 and the side lower stage heater 20 are made of, for example, black iron (carbon).
  • the heaters 10 and 20 may be made of a material other than graphite as long as it is a conductive material that can be heated by current and does not cause contamination.
  • CZ C composite carbon fiber reinforced carbon composite material! / ⁇ .
  • a heat insulating cylinder 8b made of a heat insulating material is provided between the side upper stage heater 10, the side lower stage heater 20 and the inner wall of the CZ furnace 2.
  • a pulling mechanism 4 is provided above the quartz crucible 3.
  • the pulling mechanism 4 includes a pulling shaft 4a and a seed crystal 4b.
  • the pulling shaft 4a moves in the vertical direction, the seed crystal 4b is immersed in the melt 5, and the single crystal silicon ingot 6 is transformed from the melt 5 to the CZ method. Pulled up by. At the time of pulling up, the quartz crucible 3 is rotated by the rotating shaft 9. A shaft hole 49 through which the rotary shaft 9 is passed is formed on the bottom surface of the CZ furnace 2.
  • the inside of the furnace 2 is maintained at a vacuum (for example, about 20 Torr).
  • argon gas as an inert gas is supplied to the CZ furnace 2 and exhausted by a pump from the exhaust rotor of the CZ furnace 2.
  • the inside of the furnace 2 is depressurized to a predetermined pressure.
  • Various evaporants are generated in the CZ furnace 2 during the single crystal pulling process (1 batch). Therefore, argon gas is supplied to the CZ furnace 2 and exhausted together with the evaporated substance outside the CZ furnace 2 to remove the evaporated substance from the CZ furnace 2 and clean it.
  • the argon gas supply flow rate is set for each process in a batch.
  • a heat shielding plate 8a (gas rectifier) is provided above the quartz crucible 3 and around the single crystal silicon 6, a heat shielding plate 8a (gas rectifier) is provided.
  • the heat shielding plate 8a is supported by the heat insulating cylinder 8b.
  • the heat shielding plate 8a guides argon gas as a carrier gas supplied from above into the CZ furnace 2 to the center of the melt surface 5a, and further passes through the melt surface 5a to the peripheral portion of the melt surface 5a. Lead. Then, the argon gas 7 is discharged together with the gas evaporated from the melt 5 at the exhaust port provided in the lower part of the CZ furnace 2. Therefore, oxygen evaporated from the melt 5 can be kept stable, and the gas flow rate on the liquid surface can be stabilized.
  • the heat shielding plate 8a insulates and shields the single crystal silicon 6 from radiant heat generated by heat sources such as the quartz crucible 3, the melt 5, the heaters 10 and 20. Further, the heat shielding plate 8a prevents the single crystal silicon 6 from being impeded by impurities (for example, silicon oxide) generated in the furnace and inhibiting single crystal growth.
  • the distance between the lower end of the heat shielding plate 8a and the melt surface 5a can be adjusted by raising and lowering the rotary shaft 9 and changing the vertical position of the crucible 3.
  • the upper and lower positional relationship with 20 also changes relatively.
  • FIG. 4 shows a configuration of the heater of the reference example.
  • the heater of Example 1 shown in FIG. 2 and the heater of the reference example shown in FIG. 4 will be compared.
  • the width c and the thickness d of the current flow path of the upper side heater 10 are the same in each part of the heater. There is no difference.
  • the width c and the thickness d of the current flow path are the same in each part of the heater, and the amount of heat generated is not different between the upper part and the lower part of the heater.
  • the width of the current flow path is smaller than the width cl of the heater upper portion than the width cl of the heater upper portion c2. Is configured to be wider.
  • the current passing cross-sectional area of the upper side heater 10 is The lower part of the heater is wider than the upper part, and the resistance value is correspondingly lower in the lower part of the heater than in the upper part of the heater.
  • the lower side heater 20 is configured such that the width of the current flow path is larger in the width c2 at the upper part of the heater than the width cl at the lower part of the heater.
  • the current passage cross-sectional area of the lower heater 20 on the side surface is larger in the upper part of the heater than in the lower part of the heater, and the resistance value is accordingly smaller in the upper part of the heater than in the lower part of the heater.
  • the upper part generates relatively less heat.
  • the side upper heater 10 of Example 1 shown in FIG. 2 has a part of the current flow path below the position corresponding to the upper end position of the side lower heater 20 of the reference example shown in FIG.
  • the side lower heater 20 of Example 1 shown in FIG. 2 is part of the current flow path at the lower end position of the side upper heater 10 of the reference example shown in FIG. It is formed so as to enter a position above the corresponding position.
  • the heaters 10 and 20 of Example 1 shown in FIG. 4 are viewed as a whole, the amount of heat generated in the upper region of the heaters 10 and 20 as a whole, and the amount of heat generated in the lower region of the heaters 10 and 20 as a whole, The amount of heat generated in the middle area of heaters 10 and 20 is reduced.
  • the heating part height X of the main heating part of the side upper stage heater 10 and the side lower stage heater 20 is preferably not more than 1Z2.5 times the overall height Y of the heater.
  • the current passing cross-sectional area ratio of the lower part of the heater with respect to the upper part of the heater is 1.5 times or more.
  • the current passing cross-sectional area ratio of the upper part of the heater with respect to the lower part of the heater is 1.5 times or more.
  • the heater width cl and the heater width c2 satisfy the relationship of c2 ⁇ l .5 X cl.
  • the number of slits may be set in accordance with a desired heater resistance value without any limitation on the number of slits.
  • the interval between the current flow paths constituting the heater can be set to, for example, about 5 to 30 mm, and the interval b between the upper heater 10 and the lower heater 20 can be set to, for example, about 10 to 30 mm. desirable. If these distances a and b are widened, the heat escape from the gap increases, making it difficult to obtain the effects of the present invention. Conversely, if the distances a and b are narrowed, the possibility of discharge increases, and the process itself It is a force that may fail to hold.
  • FIG. 8 is a diagram comparing temperature distribution ranges at the bottom of a quartz crucible when the heater of the present invention and a conventional heater are used.
  • the heaters of the present invention are the upper and lower heaters 10 and 20 of FIG. 2, and the conventional heaters are the upper and lower heaters 10 and 20 of FIG.
  • the horizontal axis in the figure is the power ratio (between about 1 and 3 in the figure) obtained by dividing the power output of the lower heater by the power output of the upper heater, and the output of the lower heater 20 increases as the power ratio increases. Means greater than the output.
  • the vertical axis in the figure shows the temperature at the center of the bottom of the quartz crucible 3 as an arbitrary value.
  • the temperature distribution range H 1 of the present invention and the conventional temperature distribution range H 2 at a power ratio of 1 to 3 are respectively shown.
  • the temperature distribution range at the bottom of the quartz crucible 3 is larger than the conventional one. Therefore, by adjusting the power ratio, the spread of the temperature distribution at each position in the vertical direction of the quartz crucible 3, that is, at each position in the growth direction of the single crystal silicon 6, is further expanded compared to the reference example. Thus, the control range of the oxygen concentration of the single crystal silicon 6 is further expanded.
  • Fig. 9 (a) is a graph showing the control range of the oxygen concentration of the single crystal silicon 6
  • Fig. 9 (b) is a graph corresponding to Fig. 9 (a). The yield range in the growth direction is shown.
  • the horizontal axis represents the crystal constant diameter portion length (%)
  • the vertical axis represents the oxygen concentration (arbitrary value) of the single crystal silicon 6.
  • the oxygen concentration of the single crystal silicon 6 when the heater of the reference example is used is indicated by a broken line, and the oxygen of the single crystal silicon 6 when the heater of the present invention (Example 1) is used.
  • the concentration is indicated by a solid line.
  • the upper limit value of the oxygen concentration of single crystal silicon 6 is A1
  • the lower limit value is A2
  • the width of the lower limit A2 indicates the oxygen concentration control width of the single crystal silicon 6 when the heater of the reference example is used.
  • E indicates the oxygen concentration standard.
  • the oxygen concentration in the oxygen concentration standard E is a condition for the yield of the single crystal silicon 6.
  • the oxygen concentration control width B1 to B2 of the single crystal silicon 6 is wide, so that the oxygen concentration standard E is higher than when the heater of the reference example is used.
  • the length of the constant-diameter portion of the crystal entering is expanded. As a result, as shown in FIG.
  • the yield range of the single crystal silicon 6 when the heater 1) is used is larger than the yield range of the single crystal silicon 6 when the heater of the reference example is used.
  • the heater of the present invention (Embodiment 1) is used in a single crystal silicon manufacturing apparatus, the yield of the single crystal silicon 6 to be pulled can be improved.
  • the configuration of the heater of the first embodiment shown in FIG. 2 described above is merely an example, and the heater having the configuration shown in FIGS. 5, 6, and 7 may be used.
  • FIG. 5 shows the configuration of the heater of Example 2.
  • the lower end position of the side upper heater 10 and the upper end position of the side lower heater 20 are the same as the lower end position of the side upper heater 10 and the side lower heater 20 of the reference example shown in FIG.
  • the heater is configured in the same manner as the heater of Example 1 in FIG.
  • the upper side heater 10 is configured such that the width of the current flow path is wider in the width c2 at the lower portion of the heater than the width cl at the upper portion of the heater.
  • the current passing cross-sectional area of the upper side heater 10 is larger at the lower part of the heater than at the upper part of the heater, and the resistance value is accordingly smaller at the lower part of the heater than at the upper part of the heater.
  • the amount of heat generated is relatively lower in the lower part of the heater.
  • the lower side heater 20 is configured such that the width of the current flow path is larger in the width c2 at the upper portion of the heater than the width cl at the lower portion of the heater.
  • the current passing cross-sectional area of the lower heater 20 on the side surface is larger at the upper part of the heater than at the lower part of the heater, and the resistance increases accordingly.
  • the value is lower in the upper part of the heater than in the lower part of the heater, and the amount of heat generated is relatively lower in the upper part of the heater than in the lower part of the heater.
  • the heat generating portion height X of the main heat generating portion of the side upper heater 10 and the side lower heater 20 is not more than 1Z2.5 times the height Y of the entire heater.
  • the current passing cross-sectional area ratio of the lower part of the heater with respect to the upper part of the heater is 1.5 times or more.
  • the current passing cross-sectional area ratio of the upper part of the heater with respect to the lower part of the heater is 1.5 times or more.
  • the heater width cl and the heater width c2 satisfy the relationship c2 ⁇ l. 5 X cl.
  • FIG. 6 shows the configuration of the heater of Example 3.
  • the lower end position of the side upper heater 10 and the upper end position of the side lower heater 20 are the same as in the reference example shown in FIG.
  • the lower side position of the heater 10 on the side surface is the same as the upper end position of the lower side heater 20 on the side surface.
  • the amount of heat generated is changed by changing the thickness d of the current flow path not the width c of the current flow path.
  • the upper side heater 10 is configured such that the thickness of the current flow path is greater at the thickness d2 at the lower portion of the heater than at the thickness d1 at the upper portion of the heater.
  • the current passing cross-sectional area of the upper heater 10 on the side surface is larger in the lower part of the heater than in the upper part of the heater, and the resistance value is correspondingly smaller in the lower part of the heater than in the upper part of the heater, and in comparison with the upper part of the heater.
  • the lower part of the heater generates relatively less heat.
  • the lower side heater 20 is configured such that the thickness of the current flow path is larger at the thickness d2 at the upper portion of the heater than at the thickness dl at the lower portion of the heater.
  • the lower side The current cross-sectional area of the heater 20 is larger at the upper part of the heater than at the lower part of the heater, and the resistance is accordingly smaller at the upper part of the heater than at the lower part of the heater, and relative to the upper part of the heater rather than the lower part of the heater. Heat generation is reduced.
  • the heating part height X of the main heating part of the upper side heater 10 and the lower side heater 20 is preferably 1Z2.5 or less times the height Y of the entire heater.
  • the current passing cross-sectional area ratio of the lower part of the heater with respect to the upper part of the heater is 1.5 times or more.
  • the current passing cross-sectional area ratio of the upper part of the heater with respect to the lower part of the heater is 1.5 times or more.
  • the heater wall thickness dl and the heater wall thickness d2 preferably satisfy the relationship of d2 ⁇ l.5 X dl.
  • FIG. 7 shows the configuration of the heater of Example 4.
  • Example 4 Unlike the heaters of Example 1, Example 2, and Example 3, the heater of Example 4 is composed of upper and lower three-stage heaters that are not combined with upper and lower two-stage heaters.
  • the upper side heater 10, the intermediate side heater 30, and the lower side heater 20 are sequentially arranged from the upper side.
  • the side surface upper stage heater 10 is configured such that the width of the current flow path is wider in the lower width c2 of the heater than in the upper width of the heater cl.
  • the current passage cross-sectional area of the upper side heater 10 is larger in the lower part of the heater than in the upper part of the heater, and the resistance value is accordingly smaller in the lower part of the heater than in the upper part of the heater.
  • the calorific value is relatively lower in the lower part.
  • the lower side heater 20 is configured such that the width of the current flow path is larger in the width c2 at the upper part of the heater than the width cl at the lower part of the heater.
  • the side heater 20 The current passage cross-sectional area is larger at the upper part of the heater than at the lower part of the heater, and the resistance value is accordingly smaller at the upper part of the heater than at the lower part of the heater, and the heat at the upper part of the heater is relatively higher than that at the lower part of the heater. The amount is reduced.
  • the side surface intermediate stage heater 30 is configured such that the width of the current flow path becomes the same width c2 in each part of the heater. This is because the width of the current flow path of the side middle stage heater 30 is reduced so that the amount of heat generated by the side middle stage heater 30 is smaller than the upper part of the side upper stage heater 10 and the lower part of the side lower stage heater 20.
  • the force equal to the maximum width (c2) of the current path of the upper side heater 10 and the lower side heater 20 may be set to a width larger than that to further reduce the amount of heat generation.
  • the heating part height X of the main heating part of the upper side heater 10 and the lower side heater 20 is preferably 1Z2.5 or less times the height Y of the entire heater.
  • the current passing cross-sectional area ratio of the lower part of the heater with respect to the upper part of the heater is 1.5 times or more.
  • the current passing cross-sectional area ratio of the upper part of the heater with respect to the lower part of the heater is 1.5 times or more.
  • the heater width cl and the heater width c2 satisfy the relationship of c2 ⁇ l .5 X cl.
  • Example 4 of FIG. 7 the force that changes the amount of heat generated in each part of the heater by changing the width c of the current flow path in each part of the heater.
  • the heating value of each part of the heater may be changed by changing the thickness d of the heater.
  • the resistance value in each part of the heater is adjusted so that the amount of heat generation is relatively lower in the lower part of the heater than in the upper part of the heater.
  • the force that adjusts the resistance value in each part of the heater so that the amount of heat generated is relatively lower in the upper part of the heater than in the lower part of the heater.
  • it is also possible to adjust the resistance value so that the amount of heat generated is different between the upper part and the lower part of the heater 20 only on the lower side. For example, in the case of Example 2 shown in Fig.
  • the resistance value at each part of the heater is adjusted so that only the upper heater 10 on the side face generates less heat at the lower part of the heater than at the upper part of the heater.
  • the current flow path widths cl and c2 are different
  • the side heater 20 has the same amount of heat generated at the top and bottom of the heater as in the reference example of FIG. Implementation is also possible (assuming the same channel width c).
  • the resistance value in each part of the heater is adjusted so that the amount of heat generated is relatively lower in the upper part of the heater than in the lower part of the heater. As with the reference example in Fig. 4, it is possible to make the heat generation the same between the upper and lower heaters.
  • the force of the upper and lower three-stage heater configuration in Example 4 may be configured such that four or more stages of heaters are arranged at each position in the vertical direction of the quartz crucible 3.
  • the resistance value at each part of the heater is adjusted so that the amount of heat generated at the lower part of the heater is relatively smaller than that at the upper part of the heater.
  • Adjusts the resistance value in each part of the heater so that the amount of heat generated in the upper part of the heater is relatively smaller than that in the lower part of the heater.
  • the present invention can be similarly applied not only to a silicon single crystal but also to an apparatus for producing a compound semiconductor such as gallium arsenide.

Abstract

Un radiateur d’étage supérieur latéral (10) possède une largeur de circuit de passage de courant plus importante au niveau de la portion inférieure du radiateur par rapport à la portion supérieure du radiateur. Ainsi, la zone de section transversale de circuit de passage de courant du radiateur d’étage supérieur latéral (10) est plus importante à la portion inférieure du radiateur qu’au niveau de la portion supérieure du radiateur. En conséquence, la valeur de résistance est réduite au niveau de la portion inférieure du radiateur par rapport à la portion supérieure du radiateur et la valeur de chauffage est réduite de manière relative au niveau de la portion inférieure du radiateur par rapport à la portion supérieure du radiateur. D’autre part, un radiateur d’étage inférieur latéral (20) possède une largeur de circuit de passage de courant plus importante au niveau de la portion supérieure du radiateur par rapport à la portion inférieure du radiateur. Ainsi, la zone de section transversale de circuit de passage de courant du radiateur d’étage inférieur latéral (20) est plus importante à la portion supérieure du radiateur qu’au niveau de la portion inférieure du radiateur. En conséquence, la valeur de résistance est réduite au niveau de la portion supérieure du radiateur par rapport à la portion inférieure du radiateur et la valeur de chauffage est réduite de manière relative au niveau de la portion supérieure du radiateur par rapport à la portion inférieure du radiateur.
PCT/JP2006/318960 2005-09-30 2006-09-25 Dispositif de fabrication semi-conducteur monocristallin et procede de fabrication WO2007040081A1 (fr)

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US11/992,510 US8241424B2 (en) 2005-09-30 2006-09-25 Single crystal semiconductor manufacturing apparatus and manufacturing method
KR1020087010256A KR101391057B1 (ko) 2005-09-30 2006-09-25 단결정 반도체 제조 장치 및 제조 방법
JP2007538706A JP5343272B2 (ja) 2005-09-30 2006-09-25 単結晶半導体製造装置および製造方法
DE112006002595.3T DE112006002595B4 (de) 2005-09-30 2006-09-25 Herstellungsvorrichtung und Herstellungsverfahren für einen Einkristall-Halbleiter

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JP2005287356 2005-09-30

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JP2021042095A (ja) * 2019-09-09 2021-03-18 株式会社Sumco シリコン単結晶の製造方法

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KR101275382B1 (ko) * 2010-03-02 2013-06-14 주식회사 엘지실트론 단결정 냉각장치 및 단결정 냉각장치를 포함하는 단결정 성장장치
DE102011079284B3 (de) * 2011-07-15 2012-11-29 Siltronic Ag Ringförmiger Widerstandsheizer zum Zuführen von Wärme zu einem wachsenden Einkristall
WO2015127157A2 (fr) * 2014-02-21 2015-08-27 Momentive Performance Materials Inc. Appareil de chauffage multi-zone à densité de puissance variable, et procédés d'utilisation de ce dernier
KR101654856B1 (ko) * 2015-01-22 2016-09-06 주식회사 사파이어테크놀로지 단결정 성장용 히터 및 이를 이용한 단결정 성장장치 및 성장방법.
JP6579046B2 (ja) 2016-06-17 2019-09-25 株式会社Sumco シリコン単結晶の製造方法
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US20090133617A1 (en) 2009-05-28
KR20080058442A (ko) 2008-06-25
US8241424B2 (en) 2012-08-14
JP5343272B2 (ja) 2013-11-13
TWI337208B (fr) 2011-02-11
JPWO2007040081A1 (ja) 2009-04-16
KR101391057B1 (ko) 2014-04-30
DE112006002595T5 (de) 2008-10-23
TW200730673A (en) 2007-08-16

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