WO2007039310A1 - Crucible for the crystallization of silicon and process for making the same - Google Patents

Crucible for the crystallization of silicon and process for making the same Download PDF

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Publication number
WO2007039310A1
WO2007039310A1 PCT/EP2006/009671 EP2006009671W WO2007039310A1 WO 2007039310 A1 WO2007039310 A1 WO 2007039310A1 EP 2006009671 W EP2006009671 W EP 2006009671W WO 2007039310 A1 WO2007039310 A1 WO 2007039310A1
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WO
WIPO (PCT)
Prior art keywords
crucible
silicon
silicon nitride
coating
protective coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2006/009671
Other languages
English (en)
French (fr)
Inventor
Gilbert Rancoule
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vesuvius Crucible Co
Original Assignee
Vesuvius Crucible Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US12/089,147 priority Critical patent/US8298333B2/en
Priority to BRPI0616485-4A priority patent/BRPI0616485A2/pt
Priority to CN2006800369429A priority patent/CN101278078B/zh
Priority to CA2624887A priority patent/CA2624887C/en
Priority to PL06806079T priority patent/PL1954856T3/pl
Priority to DE602006008498T priority patent/DE602006008498D1/de
Priority to AT06806079T priority patent/ATE439461T1/de
Priority to EP06806079A priority patent/EP1954856B1/en
Application filed by Vesuvius Crucible Co filed Critical Vesuvius Crucible Co
Priority to AU2006298957A priority patent/AU2006298957B2/en
Priority to JP2008533944A priority patent/JP4917607B2/ja
Publication of WO2007039310A1 publication Critical patent/WO2007039310A1/en
Anticipated expiration legal-status Critical
Priority to NO20082102A priority patent/NO20082102L/no
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/6303—Inorganic additives
    • C04B35/6316—Binders based on silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62625—Wet mixtures
    • C04B35/6264—Mixing media, e.g. organic solvents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5062—Borides, Nitrides or Silicides
    • C04B41/5066—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/08—Details specially adapted for crucible or pot furnaces
    • F27B14/10—Crucibles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3427—Silicates other than clay, e.g. water glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
    • C04B2235/483—Si-containing organic compounds, e.g. silicone resins, (poly)silanes, (poly)siloxanes or (poly)silazanes
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase

Definitions

  • a binder that creates a bond at a temperature lower than the temperature required to oxidise the silicon nitride.
  • the bond is created at a temperature lower than 800 0 C and more preferably lower than 500 0 C.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Ceramic Products (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Glass Compositions (AREA)
  • Optical Elements Other Than Lenses (AREA)
PCT/EP2006/009671 2005-10-06 2006-10-06 Crucible for the crystallization of silicon and process for making the same Ceased WO2007039310A1 (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
AT06806079T ATE439461T1 (de) 2005-10-06 2006-10-06 Tiegel zur kristallisation von silicium und herstellungsverfahren dafür
CN2006800369429A CN101278078B (zh) 2005-10-06 2006-10-06 用于硅结晶的坩埚及其制造方法
CA2624887A CA2624887C (en) 2005-10-06 2006-10-06 Crucible for the crystallization of silicon and process for making the same
PL06806079T PL1954856T3 (pl) 2005-10-06 2006-10-06 Tygiel do krystalizacji krzemu i sposób jego wytwarzania
DE602006008498T DE602006008498D1 (de) 2005-10-06 2006-10-06 Tiegel zur kristallisation von silicium und herstellungsverfahren dafür
US12/089,147 US8298333B2 (en) 2005-10-06 2006-10-06 Crucible for the crystallization of silicon and process for making the same
JP2008533944A JP4917607B2 (ja) 2005-10-06 2006-10-06 ケイ素の結晶化用の坩堝およびその製造方法
EP06806079A EP1954856B1 (en) 2005-10-06 2006-10-06 Crucible for the crystallization of silicon and process for making the same
AU2006298957A AU2006298957B2 (en) 2005-10-06 2006-10-06 Crucible for the crystallization of silicon and process for making the same
BRPI0616485-4A BRPI0616485A2 (pt) 2005-10-06 2006-10-06 cadinho para a cristalizaÇço de silÍcio, e, processo para a preparaÇço do mesmo
NO20082102A NO20082102L (no) 2005-10-06 2008-05-05 Smeltedigel for krystallisering av silisium og fremgangsmate for fremstilling av digelen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05447224 2005-10-06
EP05447224.6 2005-10-06

Publications (1)

Publication Number Publication Date
WO2007039310A1 true WO2007039310A1 (en) 2007-04-12

Family

ID=35735284

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/009671 Ceased WO2007039310A1 (en) 2005-10-06 2006-10-06 Crucible for the crystallization of silicon and process for making the same

Country Status (18)

Country Link
US (1) US8298333B2 (https=)
EP (1) EP1954856B1 (https=)
JP (1) JP4917607B2 (https=)
KR (1) KR101212924B1 (https=)
CN (1) CN101278078B (https=)
AT (1) ATE439461T1 (https=)
AU (1) AU2006298957B2 (https=)
BR (1) BRPI0616485A2 (https=)
CA (1) CA2624887C (https=)
DE (1) DE602006008498D1 (https=)
ES (1) ES2327570T3 (https=)
NO (1) NO20082102L (https=)
PL (1) PL1954856T3 (https=)
RU (1) RU2401889C2 (https=)
TW (1) TWI400369B (https=)
UA (1) UA89284C2 (https=)
WO (1) WO2007039310A1 (https=)
ZA (1) ZA200803754B (https=)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008131841A1 (de) * 2007-04-25 2008-11-06 Esk Ceramics Gmbh & Co. Kg Formkörper mit einer dauerhaften siliciumnitridhaltigen hartbeschichtung, verfahren zu dessen herstellung und dessen verwendung
EP1990593A1 (en) * 2007-04-30 2008-11-12 General Electric Company Crucibles For Melting Titanium Alloys
EP2058289A1 (de) 2007-11-08 2009-05-13 ESK Ceramics GmbH & Co.KG Fest haftende siliciumnitridhaltige Trennschicht
DE102008031766A1 (de) 2008-07-04 2009-10-15 Schott Ag Verfahren zur Herstellung eines beschichteten Tiegels aus einem Tiegelgrünkörper oder aus einem zwischengebrannten Tiegelkörper sowie die Verwendung solch eines beschichteten Tiegels
RU2384410C1 (ru) * 2008-12-11 2010-03-20 Открытое акционерное общество Научно-производственное объединение "Искра" Способ подготовки к работе формообразующей оправки
CN101798236A (zh) * 2009-04-30 2010-08-11 山东圣川陶瓷材料有限公司 干法水泥回转窑预热器用陶瓷内筒
CN101870592A (zh) * 2010-06-30 2010-10-27 武汉理工大学 镀氮化钛碳化硅纤维的制备方法
US7833490B2 (en) 2006-01-12 2010-11-16 Vesuvius Crucible Company Crucible for the treatment of molten silicon
WO2012025905A1 (fr) * 2010-08-27 2012-03-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Creuset pour la solidification de lingot de silicium
US8236232B2 (en) 2007-04-30 2012-08-07 General Electric Company Methods for making reinforced refractory crucibles for melting titanium alloys
WO2013029920A1 (de) 2011-08-31 2013-03-07 Esk Ceramics Gmbh & Co. Kg Siliziumnitridhaltige trennschicht hoher härte
US20130068925A1 (en) * 2011-09-20 2013-03-21 Chung-Hou Tony Hsiao Photovoltaic Ingot Mold Release
WO2014004496A1 (en) * 2012-06-25 2014-01-03 Silicor Materials Inc. Lining for surfaces of a refractory crucible for purification of silicon and method of purification of the silicon melt using that crucible (s) for melting and further directional solidification
DE102013206993A1 (de) 2013-04-18 2014-10-23 Morgan Advanced Materials Haldenwanger GmbH Verfahren zum zumindest bereichsweisen Aufbringen einer Siliciumnitridschutzschicht auf Formkörpern aus Quarzgut
EP2660200A4 (en) * 2010-12-28 2014-10-29 Ube Industries POLYCRYSTALLINE SILICON INJECTION MOLDING AND MANUFACTURING METHOD THEREFOR, SILICON-NITRIDE POWDER FOR MOLDING MATERIAL FOR POLYCRYSTALLINE SILICON INJECTION MOLDING AND SUSPENSION THEREWITH
EP2660201A4 (en) * 2010-12-28 2014-11-05 Ube Industries POLYCRYSTALLINE SILICON INJECTION MOLDING AND MANUFACTURING METHOD THEREFOR, SILICON-NITRIDE POWDER FOR MOLDING MATERIAL FOR POLYCRYSTALLINE SILICON INJECTION MOLDING AND SUSPENSION THEREWITH
EP1780307B1 (de) * 2005-10-21 2015-01-14 ESK Ceramics GmbH & Co.KG Dauerhafte siliciumnitridhaltige Hartbeschichtung
US10023972B2 (en) 2013-09-16 2018-07-17 Commissariat à l'Energie Atomique et aux Energies Alternatives Substrate for solidifying a silicon ingot
WO2019211379A1 (de) * 2018-05-04 2019-11-07 Alzchem Trostberg Gmbh Tiegel zur herstellung von multikristallinem silicium mittels gerichteter erstarrung, verfahren zu dessen herstellung und dessen verwendung, sowie verfahren zur herstellung von multikristallinem silicium mittels gerichteter erstarrung

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1017674A3 (fr) * 2007-07-05 2009-03-03 Fib Services Internat Composition de traitement de chambre a parois refractaires et son procede de mise en oeuvre.
CN101433890B (zh) * 2008-12-05 2010-12-29 江阴海润太阳能电力有限公司 低压下在石英坩埚内壁上喷涂氮化硅涂层的方法及装置
CN101775639B (zh) * 2009-01-08 2012-05-30 常熟华融太阳能新型材料有限公司 用于多晶硅结晶炉炉壁保护的内衬及其制造方法
CN101508590B (zh) * 2009-03-20 2012-07-04 江西赛维Ldk太阳能高科技有限公司 一种多晶硅铸锭用坩埚涂层以及制备方法
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