Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
  • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
  • B24B53/12—Dressing tools; Holders therefor
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
  • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
  • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/21—Circular sheet or circular blank
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
  • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
  • Y10T428/2457—Parallel ribs and/or grooves
  • Y10T428/24579—Parallel ribs and/or grooves with particulate matter
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
  • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
  • Y10T428/24612—Composite web or sheet

Definitions

• the present invention relates to a tool having a sintered body polishing part and a method for manufacturing the tool.
• the present invention is applicable to chemical mechanical polishing (abbreviated as CMP) pads composed mainly of hard urethane and polishing tools capable of processing various semiconductor materials with high flatness and high efficiency. And an effective manufacturing method thereof.
• CMP chemical mechanical polishing
• CMP has been used for planarization of metal film wafers such as an interlayer insulating film as the number of wiring layers in VLSI devices has increased.
• the polishing pad generally made of rigid foam polyurethane
• the wafer polishing rate it is necessary to condition the surface of the polishing pad constantly or intermittently.
• Such electrodeposition type tools are not always satisfactory in holding power because the abrasive grains are only physically fixed to the substrate by the electrodeposited nickel. The grains dropped out and there was room for improvement in tool life.
• a dresser in which a polycrystalline diamond thin film is formed on a working surface of a base metal having a convex portion by a vapor phase synthesis method (Patent Document 3).
• the conventional polishing tool (pad conditioner) as described above has a structure in which a plurality of abrasive grains having different particle diameters are fixed to a substrate (base metal), so that uniform abrasive grains (vertex) are used. Since the level is difficult to obtain, the conditioning process uses only the particles that protrude the most from the substrate (base metal) surface, resulting in intense consumption of these particles that are subjected to excessive loads. Often disabled before the end of its life.
• a wafer made of silicon or the like can be covered with a tool in which a super-abrasive such as diamond is fixed to the surface of a base metal made of rigid metal, regardless of the polishing pad made of urethane foam and the free barrel, This is desirable because it saves time and money for conditioning, but for this to happen, a superabrasive layer of diamond, such as diamond, which is placed on the base metal and forms the cutting edge, has a high precision plane and retains it. It must be possible. However, such a tool was not fully realized.
• Patent Document 1 Japanese Patent Laid-Open No. 2002-337050
• Patent Document 2 JP 2004-291184 A
• Patent Document 3 Japanese Patent Laid-Open No. 10-0771559
• An object of the present invention is to provide a polishing tool capable of high-efficiency machining that solves the problem of the adhesion strength of the bullets to the substrate, the problem of the uneven polishing surface, and the like, and an effective manufacturing method thereof. It is in this.
• it is to provide a polishing tool capable of processing a surface of a semiconductor wafer or the like with high accuracy and high efficiency as a CMP pad conditioner.
• the present inventor has intensively studied to solve the above-described problems, and in addition to a polishing tool having a polishing portion made of a superabrasive sintered body, a plurality of polishing units specific to the polishing portion. As a result of further research, it has been found that the present invention can be completed.
• the present invention is a polishing tool having a polishing portion that also has super-abrasive sintered body strength, wherein the polishing portion includes a plurality of polishing units having a top portion, and each top portion is substantially on the same plane. It relates to a polishing tool.
• the present invention is such that the polishing portion is made of a superabrasive sintered body integrated with a cemented carbide backing material, and the polishing unit is formed by providing a linear groove group in the polishing portion.
• the present invention relates to the polishing tool.
• this invention relates to the said grinding
• the present invention also relates to the above polishing tool, wherein the polishing unit has a quadrangular pyramid shape, and at least one side of the top is bladed.
• the present invention relates to the polishing tool, wherein the polishing unit is a triangular pyramid shape or a triangular frustum shape.
• the present invention also relates to the above polishing tool, wherein the polishing unit has a triangular frustum shape, and at least one side of the top is bladed.
• the present invention relates to the polishing tool, wherein the polishing unit has a shape exhibiting a linear ridge line at the top.
• the polishing unit is a quadrangular pyramid or a triangular pyramid, and the pitch force si of the polishing unit is
• polishing tool which is 500 micrometers or less 200 micrometers or more.
• the polishing unit has a quadrangular pyramid shape or a triangular pyramid shape, and the height force of the polishing unit is
• the present polishing tool is 30 ⁇ m or more.
• the present invention also relates to the polishing tool as described above, wherein the super-particles are diamond. Furthermore, the present invention relates to the above polishing agent, wherein the diamond has a nominal particle size of 40-60 / zm or less. Concerning ingredients.
• the present invention also relates to the polishing tool described above, wherein the thickness of the super-abrasive sintered body is 0.1 mm or more.
• this invention relates to the said grinding
• the present invention also relates to the above polishing tool, wherein the polishing section is disc-shaped or annular.
• the present invention relates to the above polishing tool, wherein the polishing section has an outer diameter of 90 mm or more.
• the present invention also relates to the polishing tool, wherein the height of the top with respect to the bottom of the groove of the polishing part is 1 mm or less.
• the present invention relates to the above polishing tool, wherein the polishing part is composed of two or four divided polishing parts, and each of the divided polishing parts has a fan shape having the same central angle.
• the divided polishing portion has two groove groups, the first groove group is provided parallel to the radial edge of the divided polishing portion, and the second groove group is orthogonal to the first groove group. It is related with the said grinding
• the present invention relates to the above polishing tool, wherein the polishing part has a force of 3 or 6 divided polishing parts, and each of the divided polishing parts has a fan shape having the same central angle.
• the divided polishing portion has three groove groups, the first groove group is provided in parallel to the radial edge of the divided polishing portion, and the second groove group and the third groove group are:
• the present invention relates to the above polishing tool, which is formed so as to intersect at 60 ° and 120 ° with respect to the first groove group, respectively.
• the present invention relates to the polishing tool, wherein the groove is formed by wire-cut electric discharge machining.
• the present invention also relates to the above polishing tool, which is a CMP pad conditioner.
• the present invention relates to a method for producing a polishing tool having a polishing part having a super-agglomerate sintered body strength
• the present invention also relates to a method for manufacturing an abrasive tool having an abrasive part having super-abrasive sintered body strength.
• the present invention relates to the method for regenerating a polishing tool according to any one of the above, comprising the step of regenerating the grooves and the top of the polishing unit by wire-cut electric discharge machining.
• the polishing tool of the present invention uses a polishing portion having super-atomized sintered body strength, and is sintered at a temperature equal to or higher than the melting temperature of the binder, so that the fixing strength of the super-atomized particles is substantially increased.
• a polishing portion having super-atomized sintered body strength, and is sintered at a temperature equal to or higher than the melting temperature of the binder, so that the fixing strength of the super-atomized particles is substantially increased.
• there is no dropout In particular, when diamond particles are used as super-ejections, diamond is subjected to temperature and pressure conditions in which the binder metal melts and the diamond is thermodynamically stable in the manufacturing process, and the diamond fine particles become the binder metal. Due to the strong integration through partial dissolution, the fixing strength is further increased, and virtually no dropout occurs.
• a polishing tool for manufacturing a bonded body is a large-diameter polishing part by cutting out a large-diameter fan-shaped divided polishing part from a small-diameter super-abrasive sintered body that does not cause unevenness of sintering and combining a plurality of these parts. Therefore, it is possible to obtain a highly accurate polishing tool that is homogeneous throughout.
• the polishing portion in which the polishing unit is formed is composed of a superabrasive sintered body having a sufficient thickness on the surface, even if the polishing unit is worn out by use, the wire cut discharge is performed.
• the groove and polishing unit can be easily regenerated by heating and reused as the tool of the present invention.
• each polishing unit is arbitrarily cut by a super-abrasive sintered body force, such as a diamond sintered body, by a wire cut discharge cage, such as a triangular pyramid and a quadrangular pyramid. Since it is easy to control the bottom surface level and height, a tool having a polishing surface (level) with higher accuracy than a conventional polishing tool can be obtained.
• a CMP pad conditioner the surface of a semiconductor wafer can be processed with high accuracy and high efficiency.
• FIG. 1 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention. (Example 1)
• FIG. 2 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention. (Example 2)
• FIG. 3 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
• FIG. 4 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
• FIG. 5 is a partially enlarged view of FIG.
• FIG. 6 is a partially enlarged view of FIG.
• FIG. 7 is an explanatory view (plan view) showing an example of the configuration of the polishing unit of the polishing tool according to the present invention.
• FIG. 8 is an explanatory view showing a cross section taken along line AA in FIG.
• FIG. 9 is an explanatory view (plan view) showing another configuration example according to the polishing unit of the polishing tool according to the present invention.
• FIG. 10 is an explanatory view showing a cross section taken along line BB in FIG. 9.
• FIG. 11 is an explanatory view showing an embodiment of wire-cut electric discharge machining that can be used in the manufacturing method of the polishing tool according to the present invention.
• FIG. 12 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
• FIG. 13 is an explanatory view (plan view) showing one embodiment of a polishing tool according to the present invention.
• FIG. 15 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
• FIG. 16 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
• FIG. 17 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention. Explanation of symbols
• the super-agglomerate sintered body as the material of the polishing tool of the present invention is obtained by treating super-agglomerate powder such as diamond or cBN (cubic boron nitride) in an ultra-high pressure and high-temperature process by a conventional method. It is done. Since the sintered body in this state has a large distortion, the sintered body is preliminarily flattened by die discharge machining. Next, the grooves and the side surfaces of the protrusions are formed stepwise in a manner specified by the present invention, thereby creating a polishing unit, that is, a protrusion portion that directly contacts the object to be polished. When a commercially available product is used as the superabrasive sintered body, although depending on the specification, the surface is flattened, the above-described preplanarization treatment can be omitted.
• super-agglomerate powder such as diamond or cBN (cubic boron nitride) in an ultra-high pressure and high-temperature process by
• wire cutting electric discharge machining die electric discharge machining, other precision electric discharge machining, or laser machining can be used.
• Wire cutting electric discharge force is preferable, and the top of the polishing unit is preferred.
• Wire-cut electric discharge machining is particularly preferred when sharpening sharp edges.
• Wire cutting is a technique in which a wire for electric discharge machining is driven along the surface of the super-abrasive sintered body, and the material is removed by electric discharge between the metal wire and the super-encapsulated sintered body material. Is done.
• the polishing unit is, for example, a plurality of groove groups (hereinafter referred to as divided groove groups) for dividing a polishing surface into an annular sintered body layer having a circular or concentric central circular hole. Can also be created by die-cutting using an electrode having an electrode surface formed in a corresponding shape. Regardless of whether the segment groove group is formed on the surface of the superabrasive layer or the electrode surface, it is easy to make it straight. [0021]
• the dividing groove group can be variously arranged.
• two sets of parallel straight line groups extending to the outer periphery on the opposite side from the outer periphery are formed perpendicular to each other (Fig. 1), and There are three pairs of straight lines intersected at 60 ° (Fig. 2).
• Fig. 1 two sets of parallel straight line groups extending to the outer periphery on the opposite side from the outer periphery
• Fig. 2 There are three pairs of straight lines intersected at 60 ° (Fig. 2).
• square or triangular polishing units are created, respectively.
• the shape of the polishing unit has a linear ridge line at the top (FIG. 3; the polishing unit exhibits a ridge line to the end of the polishing part, FIGS. 4 to 5; the base of the polishing unit is rectangular), etc. It's okay.
• the groove and the inclined surface of the adjacent polishing unit are formed by wire-cut electric discharge machining, so that the ridge line is basically formed parallel to the long side.
• the quadrangular pyramid-shaped polishing units do not necessarily have the same vertical and horizontal pitches, but the CMP conditioner is preferably a square.
• FIG. 6 schematically shows a partially enlarged explanatory view of the polishing tool 1 of FIG. 1.
• the area (X) of the base of the polishing unit 2 that is, superabrasive grains
• the ratio of the top area (Y) to the area of the layer cross section minus the area of the groove 3 around the polishing unit) is preferably 50% or less, particularly preferably 2 to 25%.
• the apex angle of the top of the polishing unit is preferably 30 to 120 °, particularly preferably 60 to 90 °, and still more preferably about 70 to 80 °.
• the depth of the groove (height of the polishing unit from the groove bottom) is suitably 0.1 mm or more and lmm or less, particularly 0.15 mm or more and 0.3 mm or less. If the groove is too shallow, the shavings of the work material will not be discharged efficiently, and the polishing resistance will tend to be excessive. On the other hand, if the depth is too deep, the strength of the polishing unit will be insufficient, and an excessive super-atomized layer thickness will be required.
• the polishing unit is formed as a polygonal column with a top or a straight line, a line segment, a triangle, a square or more, and each side surface is perpendicular to the substrate, and the horizontal cross section is uniform over the entire height.
• each side surface of the polishing unit is inclined to form a frustum, for example, a square.
• a frustum shape or a triangular frustum shape is preferable.
• the shape of a pyramid for example, a quadrangular pyramid or a triangular pyramid is particularly preferable in terms of sharpness.
• one or more sides of a rectangle or triangle are polished with a dedicated tool to sharpen the edges or vertices of the top, so-called “blading”. If done, a better sharpness can be achieved.
• the polishing unit force is a polygonal column or a polygonal frustum
• the top is a polygon (typically a triangle or a quadrangle)
• cutting is performed on at least one side of the top surface.
• a quadrangular pyramid shape or a triangular pyramid shape sufficient sharpness can be achieved without cutting.
• the polishing part of the present invention has an outer diameter of 90 mm or more and a superabrasive layer thickness of 0.1 mm to 1 mm.
• a sintered superabrasive layer one side of a diamond sintered body (PCD) or c-BN sintered body (Pc BN) is bonded to a cemented carbide, that is, a tungsten carbide based composite material or a group 6a of the periodic table.
• a cemented carbide that is, a tungsten carbide based composite material or a group 6a of the periodic table.
• a cemented carbide that is, a tungsten carbide based composite material or a group 6a of the periodic table.
• a structure backed by a composite block composed mainly of metal carbide Adhere the composite side to the tool substrate with an adhesive, etc., and form a section groove on the opposite side to use as a polishing part. .
• a disk-shaped one typically prepared by a uniaxial pressurization type high-temperature ultrahigh-pressure hydrostatic press is commercially available.
• the abrasive tool of the present invention may be prepared for each part and assembled and used as a single abrasive tool when particularly severe flatness is not required.
• the polishing unit is composed of a plurality of divided polishing units
• grooves are formed at the boundary between the divided polishing units in order to obtain an arrangement in which the polishing units are evenly aligned as much as possible in the entire polishing unit. Is appropriate.
• two groups of parallel grooves intersecting at right angles to each other are formed in the two or four divided polishing portions and the polishing unit is a quadrangular pyramid or a truncated pyramid shape, polishing without disturbance except for the outer peripheral portion. Unit alignment is obtained.
• a wire for electric discharge machining is sent along the surface of the polished portion and released.
• linear grooves are formed on the surface of the polished portion by electricity.
• the shear in the Z-axis direction of the polishing portion and cutting the polishing portion along the side surface contour of the quadrangular pyramid the side surface of the cone-shaped body adjacent to the groove is created. By repeating this operation, parallel groove groups are formed.
• the top of the cone is composed of one or a plurality of diamond particles.
• the protruding height of the top of the cone or frustum to the groove bottom is 200 m or less and 30 m or more for both the triangle and the quadrangle. If the protrusion is too shallow, the polishing body itself comes into direct contact with the work such as a pad, and conditioning tends not to be performed effectively. On the other hand, if it is too large, the strength of the polishing unit will be insufficient or excessive.
• the thickness of the super-abrasive layer is required. On the other hand, the interval (pitch) between adjacent grooves can be 1500 m or less, and the lower limit can be a force due to the diameter of the wire for the wire-cut discharge cage to be used, for example, about 200 / zm.
• the polishing performance of the above-mentioned polishing unit depends on the particle size of the super-cannon contained in the top of the cone-shaped body.
• the superabrasive grains are diamond particles, that is, when the sintered body constituting the polished part is a sintered diamond (PCD) layer
• the diamond particle size is 40-60 ⁇ m or less
• the diamond sintered body that can be used in the polishing portion of the present invention comprises diamond particles that are thermodynamically bonded together with a cemented carbide as a backing material and, if necessary, a binder metal such as a core. It is obtained by subjecting it to stable ultra-high pressure and high temperature conditions. Processing from the sintered body to the polishing portion of the present invention can be realized by precision electric discharge machining, typically cut out by wire cut electric discharge machining, and formation of a polishing unit by surface processing.
• wire-cut discharge Karoe In wire-cut discharge Karoe, in general, an electric discharge machining wire is brought into contact with a superabrasive sintered body and discharged, the wire is moved horizontally so as to obtain a desired groove width, and the side surface of the polishing unit is further moved. Move to form.
• the tool of the present invention can be manufactured in several shapes as illustrated in FIGS.
• the polishing part can be made in a single continuous circle and an annular shape as illustrated in FIGS. 12 and 13, but in the present invention, as shown in FIGS. Since the polishing portion can be configured with a plurality of divided polishing portions without any problem, an annular polishing portion having a large outer diameter of 95 mm or more can be easily obtained particularly in these cases.
• the radial width is preferably 15 mm or more.
• the polished portion can be a disc shape (without a central hole) instead of an annular shape. Also, as shown in Fig. 12 and Fig.
• polishing unit is composed of a plurality of divided polishing units, as illustrated in FIGS.
• the polishing unit arrangement By setting the polishing unit arrangement so that the boundary part (joint part) between two adjacent divided polishing parts becomes a groove, the polishing unit arrangement is disturbed by the divided structure of the polishing part, and the workpiece (polishing pad) associated therewith ) Can be avoided or minimized.
• the number of divisions of the polishing part and the shape of the available polishing units are related.
• the tri-section (center angle 120 °) polished part has a triangular pyramid shape (Figs. 16 and 17).
• a large-diameter polishing tool cutting to a predetermined size and shape from a small-diameter super-encapsulated sintered body (preferably a diamond sintered body) capable of uniform sintering. Then, a divided polishing part formed by heating is prepared. A plurality of divided polished parts are bonded to a flat disk surface or an annular surface of a rigid substrate made of various steels using an adhesive or the like, so that a large-diameter disk shape or an annular shape is joined. A polishing portion (a shape having a concentric circular hole in the center of the disk) can be obtained.
• a small-diameter super-encapsulated sintered body preferably a diamond sintered body
• Each polishing part 51, 61, 71, 81, 91, 101 joins the cemented carbide side to the flat circular surface of the circular substrate 52, 62, 72, 82, 92, 102, and is generally circular. Or make it present an annular polished part.
• the superabrasive sintered body bonded to the substrate is then subjected to wire-cut electric discharge machining in the following manner, and the superabrasive sintered body is subjected to an electric discharge process between the wire-force electric discharge machining wire and the superabrasive sintered body.
• Surface of sintered powder A set of linear groove groups 53, 63, 73, 83, 93, 103 which are parallel to each other at regular intervals are formed.
• the wire is driven parallel to the substrate surface or the substrate bottom surface and enters the sintered body layer (typically a sintered diamond (PCD) layer) from a pre-planarized surface.
• the sintered body layer is further carved into a cemented carbide layer if the sintered body layer is thin.
• the wire is driven and cut in the thickness direction (Z-axis direction) of the super-orbital sintered body to form a groove.
• the first groove formation in one groove group can be started at any position force in either a triangular pyramid or a quadrangular pyramid on a 360 ° continuous circular or annular surface. If this is the case, the joints 54, 64, 74, 84, 94, and 104 of the divided polishing part are always provided with grooves, and then on both sides, with a constant pitch and parallel to the entire surface. To form.
• the superabrasive sintered body is then rotated together with the substrate around the central axis of the substrate by the groove group crossing angle OC.
• the second linear parallel groove group 55, 65, 75, 85, 95, 105 and the inclined side surface adjacent to each groove are formed at the above-mentioned fixed intervals.
• ⁇ is 90 ° for 180 ° and 90 ° fan shapes
• the polishing unit has a quadrangular pyramid shape or frustum shape.
• the second linear parallel groove group and the inclined side surface adjacent to each groove are formed at the same regular intervals.
• An inclined side surface is formed.
• ⁇ can be either 90 ° or 60 °.
• the groove and the triangular or quadrangular pyramid or frustum-like body are obtained by driving the discharge wire at a height (level) in which the substrate bottom surface force is equally spaced in the thickness direction. Can be formed on a level parallel to the bottom surface of the substrate.
• the triangular pyramid or the quadrangular pyramid of the polishing unit does not necessarily need to be entirely composed of a superabrasive sintered body, and at least about 60 m including the apex of the cone-shaped body. If this part (height) is a super-abrasive sintered body, it can be used even if the lower part is a cemented carbide.
• a polishing tool 1 having a structure schematically shown in FIG. 1 was prepared.
• a PCD block with a diameter of 90 mm was used as a tool material, in which a sintered diamond layer with a thickness of 0.6 mm was integrated with cemented carbide by simultaneous sintering.
• the surface of the sintered diamond layer is flattened by an electric discharge cage (EDM), and a polishing unit 2 having a square top of 260 m on one side is obtained by a wire cut electric discharge cage. It was formed by engraving parallel linear grooves 3 having a width of 560 m.
• the area of the top portion (not shown) of the polishing unit 2 corresponds to about 10% of the cross-sectional area of the super-abrasive sintered layer excluding the peripheral portion (the groove 3 portion).
• the top edge was edged and used as a CMP conditioner.
• An annular polishing tool 4 schematically shown in FIG. 2 was produced. 0.6mm thick sintered c BN layer is integrally formed with cemented carbide by simultaneous sintering. From a PcBN block, wire cut discharge calorie, 90 ° fan with 60mm outer radius and 24mm inner radius. 4 molds were cut out and used as a tool material The above fan mold was attached to a SUS stainless steel substrate and combined into a complete circle. The surface of the sintered diamond layer is polished and flattened, and by wire-cut electric discharge machining, a polishing unit 5 having an apex of an equilateral triangle with a side of 350 ⁇ m is formed into a parallel straight groove 6 with a width of 560 ⁇ m. Formed in groups. In this case, the area of the top of the polishing unit is 7% of the entire superabrasive sintered layer. The obtained tool was bladed by the same operation as in Example 1 and used for polishing the surface of the silicon wafer.
• a polishing tool having the structure schematically shown in FIG. 12 was prepared. Polished diamond sintered body with a diameter of 100 mm, with a diamond particle force of nominal particle size of 40-60 ⁇ m and a 0.5 mm thick PCD layer integrated with cemented carbide (WC—8% Co) by simultaneous sintering This was used as a part and fixed to an SUS316 stainless steel circular substrate having a diameter of 108 mm with an epoxy adhesive.
• Polished diamond sintered body with a diameter of 100 mm, with a diamond particle force of nominal particle size of 40-60 ⁇ m and a 0.5 mm thick PCD layer integrated with cemented carbide (WC—8% Co) by simultaneous sintering This was used as a part and fixed to an SUS316 stainless steel circular substrate having a diameter of 108 mm with an epoxy adhesive.
• the surface of the PCD layer was flattened with a mold discharge cage and then cut into the PCD layer with a wire cut discharge cage to form a straight groove having a width of 200 m passing through the center of the material. Further wires Driving to the side and moving in a direction away from the substrate (z direction), a groove having a necessary width was formed and the side surface of the cone was cut out.
• wire cutting discharge is performed under the same conditions to form a second linear groove group orthogonal to the above groove group, and at the same time The sides of the cones in the orthogonal direction were cut out to form a group of quadrangular pyramids as shown in Figs. 7 and 8 with a height of 200 m.
• Example 3 Using a diamond sintered body with an outer diameter of 100 mm and an inner diameter of 70 mm as a polishing part, in which a 0.5 mm thick PCD layer composed of diamond particles with a nominal particle size of 0-2 ⁇ m is integrated with cemented carbide The operation of Example 3 was repeated to produce a polishing tool having a quadrangular pyramid-shaped polishing unit. First, the surface of the flat PCD layer was wire-cut discharge force, and a straight groove with a width of 140 ⁇ m passing through the center of the material was formed. Furthermore, the necessary groove width was expanded and the side surfaces of the cones were cut out by manipulating the wires. By repeating this, a group of parallel grooves with a groove interval of 200 m and a roof-like protrusion with an apex angle of 60 ° were formed on the entire material surface.
• the second straight groove group is formed by performing wire cut discharge heating under the same conditions, and at the same time, the side surface of the second conical body is formed. Cut out to form a group of quadrangular pyramids with a height of 200 m.
• Tools having the respective configurations were produced using the following various types of divided polishing portions. All diamond diamonds have a nominal grain size of 20-30 m.
• the wire-cut operation is essentially the same for triangular pyramid polishing units, except that the tool material is rotated twice by 60 °, differing from a square pyramid polishing unit that rotates 90 ° only once. Not different.
• the operating conditions and results are shown in the following table.
• the apex interval is 2 or 4 triangular pyramid
• the polishing tool of the present invention can be used as various types of polishing tools, but can be particularly suitably used as a disk-type rotary polishing tool. As an application, it is particularly suitable for use as a CMP pad conditioner, and is also suitable for directly polishing the surface of a semiconductor wafer or the like. In addition to these, it can be applied to high-precision polishing of various work materials.

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• Engineering & Computer Science (AREA)
• Mechanical Engineering (AREA)
• Polishing Bodies And Polishing Tools (AREA)
• Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
• Grinding-Machine Dressing And Accessory Apparatuses (AREA)

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• 2006
  • 2006-08-25 WO PCT/JP2006/316737 patent/WO2007023949A1/ja active Application Filing
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  • 2006-08-25 RU RU2008110905/02A patent/RU2430827C2/ru not_active IP Right Cessation
  • 2006-08-25 CN CN200910170789A patent/CN101693353A/zh active Pending
  • 2006-08-25 KR KR1020087005076A patent/KR101293461B1/ko not_active IP Right Cessation
  • 2006-08-25 US US11/990,562 patent/US20090215366A1/en not_active Abandoned
  • 2006-08-25 AU AU2006282293A patent/AU2006282293B2/en not_active Ceased
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