Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B28—WORKING CEMENT, CLAY, OR STONE
  • B28D—WORKING STONE OR STONE-LIKE MATERIALS
  • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
  • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
  • B28D5/0052—Means for supporting or holding work during breaking
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/08—Devices involving relative movement between laser beam and workpiece
  • B23K26/10—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/36—Removing material
  • B23K26/40—Removing material taking account of the properties of the material involved
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
  • C03B33/00—Severing cooled glass
  • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
  • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
  • C03B33/03—Glass cutting tables; Apparatus for transporting or handling sheet glass during the cutting or breaking operations
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
  • C03B33/00—Severing cooled glass
  • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
  • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
  • C03B33/033—Apparatus for opening score lines in glass sheets
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
  • C03B33/00—Severing cooled glass
  • C03B33/09—Severing cooled glass by thermal shock
  • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
  • C03B33/00—Severing cooled glass
  • C03B33/09—Severing cooled glass by thermal shock
  • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
  • C03B33/093—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam using two or more focussed radiation beams
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K2101/00—Articles made by soldering, welding or cutting
  • B23K2101/36—Electric or electronic devices
  • B23K2101/40—Semiconductor devices
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K2103/00—Materials to be soldered, welded or cut
  • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
  • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
  • B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
  • B65G2249/04—Arrangements of vacuum systems or suction cups

Definitions

• the present invention relates to a cleaving system that locally heats a work substrate made of a brittle material (a hard and brittle material), and causes the work substrate to crack by the thermal stress.
• the present invention relates to a brittle material cleaving system and method capable of realizing high-quality and high-speed cleaving of a substrate to be processed such as a brittle material.
• the “substrate to be processed” means a substrate generally having brittle material strength, and is not limited to a glass substrate, but also includes various plate-like substrates such as silicon, gallium arsenide, and sapphire. Shall be included.
• the cutting is performed by irradiating the planned cutting line with a laser beam in a state where mechanical stress is applied to the planned cutting line of the substrate. Since the processing is performed, the cleaving speed of the substrate to be processed increases as much as mechanical stress is applied, but it is affected by the mechanical stress that is applied when the crack is formed. There is a problem that the quality of the cut section of the processed substrate is deteriorated. In particular, when the substrate to be processed is as small as several hundred mm, the cleaving process is relatively easy.
• the quality of the cut section of the substrate to be processed is very important in practice.
• the quality of the cut section is evaluated by the linearity and the amount of soge.
• linearity refers to the linearity of the breaking line 68 on the surface of the substrate 61 (the deviation S w of the breaking line 68 from the planned breaking line 71).
• linearity and soge amount are set for linearity and soge amount. Specifically, for linearity, tens of ⁇ m or less (hundreds of 100 ⁇ m or less), and for soge amount, tens of tens of ⁇ m or less (hundreds of hundred ⁇ m or less). These values vary depending on the manufacturer and product. For example, it is preferable that the linearity is about ⁇ 50 m or less and the amount of soge is about ⁇ 70 m or less.
• Patent Document 1 JP-T 8-509947
• Patent Document 2 JP-A-7-323384
• Patent Document 3 Japanese Patent Laid-Open No. 10-71483
• Patent Document 4 Japanese Patent Laid-Open No. 10-116801
• the present invention has been made in consideration of such points, and enables high-quality and high-speed cutting of a substrate to be processed that has brittle material strength regardless of the size of the substrate to be covered. It is an object of the present invention to provide a brittle material cleaving system and method that can be realized. Means for solving the problem
• the present invention locally heats a substrate to be processed, which is a brittle material key, and generates a crack in the substrate to be cut by the thermal stress.
• the substrate holder that supports the substrate to be processed and the substrate to be processed supported by the substrate holder are irradiated with a laser beam to locally heat the substrate to be processed.
• the substrate holder includes a plurality of holding bars extending substantially in parallel along the planned cutting line of the substrate to be processed. The holding bar Portion in the vicinity of the planned cutting line of the processed substrate is to form a convex shape, its position, provides a splitting processing system characterized by height and attitude is adjusted.
• the cleaving unit irradiates the workpiece substrate supported by the substrate holder with a laser beam from above, and each holding bar of the substrate holder includes: It is preferable to support the substrate to be processed so that a portion of the substrate to be processed in the vicinity of the planned cutting line has a vertically upward convex shape.
• the cleaving unit irradiates a laser beam to the workpiece substrate supported by the substrate holder from below, and each holding bar of the substrate holder It is preferable to support the substrate to be processed so that a portion of the substrate to be processed in the vicinity of the planned cutting line has a vertically downward convex shape.
• At least one holding bar of the plurality of holding bars of the substrate holder sandwiches the planned cutting line of the substrate to be covered.
• the substrate portion located on the side of the substrate is fixed, and at least one of the remaining holding bars is positioned on the other side of the substrate to be processed across the planned cutting line. It is preferable that the substrate portion to be supported is movably supported.
• each holding bar of the substrate holder may cleave the substrate portion located on one side or the other side of the substrate to be processed with the planned cutting line interposed therebetween. It is preferable to regulate the posture or shape after processing.
• each holding bar of the substrate holder is perpendicular to the planned cutting line and in-plane of the substrate to be processed while maintaining the parallel state of each holding bar. It is preferable that it is configured to be adjustable with respect to at least one of a direction, a direction perpendicular to the planned cutting line, and a vertical direction of the substrate to be processed and a direction around the planned cutting line.
• each holding bar of the substrate holder is perpendicular to the planned cutting line, in-plane direction of the substrate to be processed, perpendicular to the planned cutting line, It is preferable that at least one of the vertical direction of the substrate and the direction around the planned cutting line is adjusted at any time during cleaving according to the position of the crack tip formed on the substrate to be processed. .
• the mobile unit further includes a cooling unit that locally cools the area heated locally on the substrate to be subjected to the cutting by the cleaving unit. It is preferable to move the region heated and cooled locally on the substrate to be processed by the cleaving unit and the cooling unit relative to the substrate to be processed.
• the second solution of the present invention is a cracking method in which a substrate to be processed, which is a brittle material key, is locally heated, and the substrate to be cut is cracked by the thermal stress.
• the substrate to be processed is supported by the substrate holder including a plurality of holding bars extending substantially in parallel along the planned cutting line of the substrate to be processed, and each holding of the substrate holder is performed in the preparation step and the cutting step.
• the locally heated region on the substrate to be caloeed is cooled.
• the substrate holder that supports the substrate to be processed includes the plurality of holding bars that extend substantially in parallel along the planned cutting line of the substrate to be processed. Therefore, a uniform cleaving stress is generated with respect to the direction of the planned cleaving line on the substrate to be processed. For this reason, the deformation of the substrate to be processed occurs uniformly along the direction of the planned cutting line, and the cutting processing of the substrate to be processed is scheduled to be cut compared to the case where the substrate to be processed is simply placed on a flat surface. It is performed linearly along the line, and the quality (straightness and amount of sedge) of the fractured surface can be improved.
• each holding bar of the substrate holder has a position, height, and posture such that a portion of the substrate to be processed in the vicinity of the planned cutting line has a vertically upward convex shape. Because it is adjusted, effective mechanical stress is applied to the part near the planned cutting line of the substrate to be cut, and high-quality and high-speed cutting is performed. It can be realized more easily.
• FIG. 1 is a diagram showing an overall configuration of a cleaving system according to an embodiment of the present invention.
• FIG. 2 is a perspective view showing details of a substrate holder used in the cleaving system shown in FIG.
• FIG. 3A is a diagram showing an example of a support mode of a substrate to be processed supported by a substrate holder of the cleaving system shown in FIGS. 1 and 2.
• FIG. 3B is a view showing another example of the support state of the substrate to be processed supported by the substrate holder of the cleaving system shown in FIGS. 1 and 2.
• FIG. 4 is a perspective view for explaining a support mode of a substrate to be processed that is supported by a substrate holder of the cleaving system shown in FIGS. 1 and 2.
• FIG. 4 is a perspective view for explaining a support mode of a substrate to be processed that is supported by a substrate holder of the cleaving system shown in FIGS. 1 and 2.
• FIG. 4 is a perspective view for explaining a support mode of a substrate to be processed that is supported by a substrate holder of the cleaving system shown in FIGS. 1 and 2.
• FIG. 5 is a diagram for explaining a deformation state of a substrate to be cut that is cleaved by the cleaving system shown in FIGS. 1 and 2.
• FIG. 6 is a diagram for explaining an example of a cutting state of a substrate to be processed performed in the cutting processing system shown in FIGS. 1 and 2.
• FIG. 7 is a plan view for explaining a cutting mode of a substrate to be processed performed in the cutting processing system shown in FIGS. 1 and 2.
• FIG. 8 is a view for explaining another example of the cutting mode of the substrate to be processed performed by the cutting processing system shown in FIGS. 1 and 2.
• FIG. 9 is a view for explaining still another example of the cutting state of the substrate to be processed performed in the cutting processing system shown in FIGS. 1 and 2.
• FIG. 10 is a view showing a modified example of the fixed holding bar included in the substrate holder used in the cleaving system shown in FIGS. 1 and 2.
• FIG. 11 is a view showing a modification of the movable holding bar included in the substrate holder used in the cleaving system shown in FIGS. 1 and 2.
• FIG. 12 is a diagram for explaining the quality (straightness and amount of straight lines) of the cut section of the substrate to be processed that is practically required in the cleaving system.
• the cleaving processing system 1 locally heats a work substrate 61 made of a brittle material, and causes cracks in the work substrate 61 due to the thermal stress.
• a glass substrate or a film-coated substrate color filter substrate, TFT substrate, etc.
• the heating / cooling unit 10 includes a preheating unit 20, a cleaving unit 30, and a cooling unit 40, and these units are relative to each other along a planned cleaving line 71 on the substrate 61 to be processed. Is configured to move. Note that the preheating unit 20, the cleaving unit 30 and the cooling unit 40 included in the heating / cooling unit 10 are directed in this order from the leading side to the trailing side with respect to the moving direction on the workpiece substrate 61. They are arranged in a straight line.
• the preheating unit 20 is for locally preheating the substrate 61 to be irradiated by irradiating the substrate 61 with the laser beam LB1, and emits about 200 W of CO laser light.
• the laser beam emitted from the laser oscillator 21 is reflected by the polygon mirror 23 via the reflection mirror 22, and repeatedly scanned along the planned cutting line 71 on the substrate 61, thereby forming a linear laser.
• Beam LB1 is generated.
• the cleaving unit 30 generates a crack in the substrate to be covered 61 by irradiating the substrate to be covered 61 with the laser beam LB2 and locally heating the substrate to be covered 61. Therefore, a laser oscillator 31 that emits CO laser light of several tens of watts to several hundred tens of watts, and a laser
• a reflection mirror 32 that reflects the laser light emitted from the vibrator 31 and a polygon mirror 33 that scans the laser light reflected by the reflection mirror 32 on the substrate to be covered 61 are provided.
• the laser beam emitted from the laser oscillator 31 is reflected by the polygon mirror 33 through the reflecting mirror 32 and repeatedly scanned along the planned cutting line 71 on the substrate 61 to be processed.
• Beam LB2 is generated.
• the cooling unit 40 is for locally cooling a region heated locally on the substrate 61 by spraying the coolant C onto the substrate 61, and is provided with water or mist. (Mixtures of water and gas), gases such as nitrogen and helium, particulate solids such as carbon dioxide particles (dry ice), liquids such as alcohol, misty alcohol, snowy dry ice, etc.
• a cooling nozzle 41 for injecting the coolant C onto the surface of the substrate 61 to be coated is provided.
• all of the preheating unit 20, the cleaving unit 30 and the cooling unit 40 included in the heating and cooling unit 10 can move in the direction along the substrate to be covered 61 (X direction and Y direction).
• the preheating unit 20, the cleaving unit 30 and the cooling unit However, the alignment adjustment can be performed so that the deviation 40 is arranged in a straight line at an appropriate interval along the planned cutting line 71 on the substrate 61 to be processed!
• the moving unit 52 is for moving the substrate 61 to be moved relative to the preheating unit 20, the cleaving unit 30 and the cooling unit 40 included in the heating and cooling unit 10. It has a moving stage (not shown) that moves the substrate holder 51 that supports the workpiece 61 relative to the heating / cooling unit 10 in the XY plane.
• the substrate holder 51 is composed of a surface plate 53 and a plurality of holding bars 54A, which are provided on the surface plate 53 and extend substantially in parallel along the planned cutting line 71 of the Kalohe substrate 61. Includes 54B, 54C, and 54D.
• the holding bars 54A, 54B, 54C, 54D included in the substrate holder 51 are perpendicular to the planned cutting line 71 while maintaining the parallel state of the holding bars 54A, 54B, 54C, 54D.
• ⁇ X with respect to the in-plane direction (X direction) of the substrate 61 to be processed, perpendicular to the planned cutting line 71 and in the vertical direction (Z direction) of the processed substrate 61 and the direction around the planned cutting line ( ⁇ direction) Only height ⁇ and tilt angle ⁇ can be adjusted (optional setting).
• each holding bar 54 ⁇ , 54 ⁇ , 54C, 54D is automatically performed by a drive mechanism such as a motor, and each holding bar 54 ⁇ , 54 ⁇ , It may be performed manually by inserting a thin plate between 54C and 54D and the surface plate 53.
• At least one holding bar 54 ⁇ among the plurality of holding bars 54 ⁇ , 54 ⁇ , 54C, 54D included in the substrate holder 51 is attached to the surface thereof by a vacuum suction mechanism (not shown).
• Part 55 is provided, and the substrate to be processed 61 is fixed by adsorbing the back surface of the substrate portion located on one side of the substrate 61 to be cut and sandwiching the planned cutting line 71 to fix the substrate portion. It is configured not to slide on the holding bar 54mm.
• the holding bar 54 ⁇ has a structure in which a hole corresponding to the suction portion 55 is formed in a component member having metal or rubber force, and a plurality of holes functioning as the suction portion 55 are provided as the component member. You may use the porous ceramic which has.
• the remaining holding bars 54 ⁇ , 54C, 54D are in a state of frictional sliding or the like of the substrate portion located on the other side of the substrate 61 to be cut across the planned cutting line 71.
• the support substrate 61 is configured to slide on the holding bars 54B, 54C and 54D.
• the substrate portion that is movably supported in the substrate to be processed 61 is configured to be supported by a plurality of holding bars 54B, 54C, and 54D, so that the substrate portion after the cleaving process is unstable. Don't be.
• Each holding bar 54A, 54B, 54C, 54D of the substrate holder 51 having the above-described constituent force is formed such that a portion of the substrate 61 in the vicinity of the planned cutting line 71 is convex upward.
• the position, height, and posture are adjusted so as to make it. More specifically, as shown in FIG. 3A, by adjusting the position and height of each holding bar 54A, 54B, 54C of the substrate holder 51, the substrate 61 near the planned cutting line 71 is adjusted.
• the part can have a convex shape vertically upward. Also, as shown in FIG. 3B, by rotating the holding bar 54A provided with the suction portion 55 by the tilt angle ⁇ 0, the portion of the substrate 61 near the planned cutting line 71 is vertically upward.
• a convex shape can also be formed.
• the substrate to be processed 61 supported by the holding bars 54 ⁇ , 54 ,, 54C, 54D of the substrate holder 51 may be wavy in the heel plane.
• the ideal shape of the substrate to be processed 61 is a planar shape as indicated by reference numeral 61 'shown in Fig. 5 (a).
• the actual substrate to be processed 61 has problems in processing in the manufacturing process. Due to the problem of heat treatment after production, it is common that there are undulations in the XZ plane and the YZ plane (there is swell and warp) as indicated by reference numeral 61 "in FIG. 5 (a). Note that the undulation of the substrate 61 to be processed is, for example, about 0.1 / z mZlOmm (measurement length).
• the substrate to be processed as shown in FIG. 4 and FIG. 5 (b).
• Supported as 61 the substrate 61 to be processed supported by the holding bars 54A, 54B, 54C, 54D of the substrate holder 51 is wavy only in the XZ plane, and the position P1 of one end portion of the substrate 61 to be processed is P1.
• the cross-sectional shape of the substrate to be covered 61 in the XZ plane is substantially the same at any of the position P3 of the other end and the position P2 of an arbitrary portion.
• cleaving stress in the case of “uniform cleaving stress” means stress generated mainly in the X-axis direction, assuming that cleaving is performed in the Y-axis direction.
• the plurality of holding bars 54A, 54B, 54C, 54D included in the substrate holder 51 are substrate portions located on one side or the other side of the substrate to be broken 61 across the planned cutting line 71.
• Post-cleaving post-working posture It also functions as a member that regulates the Z-shape.
• the substrate 61 to be cleaved is positioned on the holding bars 54A, 54B, 54C, 54D of the substrate holder 51 provided on the moving unit 52. To do.
• the substrate holder 51 is moved by the moving unit 52, and heated on the planned cutting line 71 of the substrate to be covered 61 positioned on the holding bars 54A, 54B, 54C, 54D of the substrate holder 51.
• Position cooling unit 10 Note that the preheating unit 20, the cleaving unit 30 and the cooling unit 40 included in the heating / cooling unit 10 are appropriately spaced along the cleaving line 71 when positioned on the cleaving line 71 of the substrate 61 to be processed. The alignment is adjusted in advance so that it is arranged in a straight line.
• the substrate to be moved 61 positioned on the holding bars 54A, 54B, 54C, 54D of the substrate holder 51 is moved relative to the heating / cooling unit 10 by the moving unit 52.
• the preheating unit 20, the cleaving unit 30 and the cooling unit 40 included in the heating / cooling unit 10 are relatively moved in this order along the cleaving line 71 on the workpiece substrate 61.
• the preheating unit 20 of the heating / cooling unit 10 relatively moves along the planned cutting line 71 on the substrate 61 to be covered.
• the substrate 61 to be heated is locally preheated at a predetermined temperature (about 30 ° C. to 200 ° C.).
• the laser beam emitted from the laser oscillator 21 is reflected by the polygon mirror 23 through the reflection mirror 22 and repeatedly scanned along the planned cutting line 71 on the substrate 61 to be processed.
• a linear laser beam LB1 having an irradiation pattern 62 is generated.
• the cleaving unit 30 relatively moves along the planned cleaving line 71 on the substrate 61 to be preheated locally by the preheating unit 20 in this way, and the workpiece is processed by the preheating unit 20.
• the substrate 61 to be covered is heated to a predetermined temperature (100 ° C to 100 ° C). Heat locally at around 400 ° C).
• the laser beam emitted from the laser oscillator 31 is reflected by the polygon mirror 33 through the reflecting mirror 32, and repeatedly scanned along the planned cutting line 71 on the substrate 61 to be processed.
• a linear laser beam LB2 having an irradiation pattern 63 is generated.
• the cooling unit 40 relatively moves along the planned cutting line 71 on the substrate 61 heated locally by the cleaving unit 30 in this way, and is processed by the cleaving unit 30.
• the substrate 61 to be processed is locally cooled by spraying the cooling agent C onto a circular region having a width wider than that of the region heated locally on the substrate 61.
• the coolant C sprayed from the cooling nozzle 41 is sprayed on the surface of the substrate 61 to be processed with a predetermined spray pattern 64.
• the substrate 61 to be processed is supported by the holding bars 54A, 54B, 54C, 54D of the substrate holder 51, and the holding bars 54A, 54B,
• the posture Z shape of the substrate 61 to be processed is adjusted by adjusting the positions, heights, and postures of 54C and 54D.
• a substrate to be processed is described as a first example in order to explain a specific adjustment method for the positions, heights, and postures of the holding bars 54A, 54B, 54C, 54D of the substrate holder 51.
• a case where 61 is supported in the manner shown in FIG. 6 (a) will be described.
• the processed substrate 61 is supported by the holding bars 54A, 54C, 54D. It has changed.
• the holding bar 54B is not in contact with the substrate 61 to be processed.
• the positions and heights of the holding bars 54A, 54B, 54C are adjusted so that a portion of the substrate 61 in the vicinity of the planned cutting line 71 has a vertically upward convex shape. .
• the substrate portion 61A after the cleaving process is supported by the holding bar 54A provided with the suction portion 55, and its posture Z shape changes due to deflection due to its own weight, and a new posture Z Become a shape.
• the substrate portion 61B after the cleaving process is supported by the holding bars 54C and 54D, and the posture Z shape changes due to the deflection due to its own weight, and becomes a new posture Z shape.
• the position of the cutting line (cut section 68a) of the substrate 61 to be processed after the cutting processing is greatly different between the substrate portion 61A and the substrate portion 61B.
• the position of the break line (break section 68a) of the substrate 61 to be processed can be made equal between the substrate portion 61A and the substrate portion 61B. That is, if the height of the holding bar 54B is adjusted so that the holding bar 54B contributes to the support of the substrate portion 61B of the processed substrate 61 after the cleaving process, the holding bar 54B is caused by the deflection due to the weight of the substrate 61 to be covered. It is possible to appropriately regulate the change in the posture Z shape of the board portion 61B to be formed.
• the substrate 61 to be processed is supported in a manner as shown in Fig. 8 (a)
• the substrate 61 to be covered is supported by the holding bars 54A, 54C, 54D, and, except for the contact portion with the holding bars 54A, 54C, 54D, due to the deflection due to the weight of the substrate 61 to be processed,
• the posture Z shape is changing.
• the holding bar 54B is not in contact with the substrate to be covered 61.
• the holding bar 54A provided with the suction portion 55 is rotated by the tilt angle ⁇ so that a portion of the substrate 61 to be processed in the vicinity of the planned cutting line 71 has a convex shape vertically upward.
• the processed substrate 61 is divided into a substrate portion 61A and a substrate portion 61B (FIG. 8). (b)).
• the cleaved substrate portion 61A jumps up in a state of being supported by the holding bar 54A provided with the suction portion 55, and takes a new posture Z shape.
• the substrate portion 61B after the cleaving process is supported by the holding bars 54C and 54D, and its posture Z shape is changed by the deflection due to its own weight, and becomes a new posture Z shape.
• the height of the holding bar 54B located in the vicinity of the planned cutting line 71 of the substrate 61 to be processed is sufficiently low or does not exist, as shown in FIG.
• the position of the breaking line (split section 68a) will droop significantly (displacement ⁇ ).
• Reference numeral 61 denotes a substrate to be processed after cleaving
• reference numeral 6 denotes a substrate to be processed before cleaving.
• reference numeral 61 denotes a substrate to be processed after cleaving
• reference numeral 61 ′ denotes a substrate to be processed before cleaving
• reference numeral 61 ⁇ denotes a substrate to be cut in the form shown in FIG. 8 (b).
• the torsional stress and tensile stress generated in the substrate to be covered 61 can be appropriately controlled, and the quality (linearity and amount of sog) of the cut section can be improved.
• the substrate 61 to be processed is supported in the manner shown in Fig. 9 (a)
• the substrate 61 to be covered is supported by the holding bars 54A, 54B, 54C, and, except for the contact portion with the holding bars 54A, 54B, 54C, due to the deflection of the substrate 61 to be processed,
• the posture Z shape is changing.
• the positions and heights of the holding bars 54A, 54B, 54C are adjusted so that a portion of the substrate 61 to be processed in the vicinity of the planned cutting line 71 has a convex shape vertically upward.
• the cleaved substrate portion 61A is supported by the holding bar 54A provided with the suction portion 55, and its posture Z shape changes due to deflection due to its own weight, and a new posture Z Become a shape.
• the substrate portion 61B after the cleaving process changes its posture Z shape by its own weight, and becomes a new posture Z shape.
• it is supported in a state where it is supported by the holding bars 54B and 54C.
• reference numeral 61 denotes a substrate to be processed after cleaving
• reference numeral 6 denotes a substrate to be processed before cleaving.
• FIG. 9 (c) when the holding bar 54D for supporting the portion of the substrate 61 far from the planned cutting line 71 is provided, as shown in FIG. 9 (c), the substrate to be processed 61 splits The part on the constant line 71 side is minimized.
• reference numeral 61 denotes a substrate to be processed after cleaving
• reference numeral 6 denotes a substrate to be processed before cleaving.
• the torsional stress and tensile stress generated in the substrate to be covered 61 can be appropriately controlled to improve the quality (linearity and amount of sludge) of the cut section.
• the substrate holder 51 that supports the substrate to be covered 61 has the plurality of holding bars 54A, which extend substantially in parallel along the planned cutting line 71 of the substrate to be covered 61.
• 54B, 54C, 54D are included, and since the work substrate 61 is supported by these holding bars 54A, 54B, 54C, 54D, the work substrate 61 is uniformly cut in the direction of the planned cutting line 71. Stress is generated. For this reason, the deformation of the substrate 61 to be processed occurs uniformly along the direction of the planned cutting line 71, and the substrate 61 to be processed is compared with the case where the substrate 61 to be processed is simply placed on a flat surface. The cleaving process of the substrate 61 is performed linearly along the planned cutting line 71, and the quality (linearity and amount of sludge) of the cut surface can be improved.
• each holding bar 54A, 54B, 54C, 54D of the substrate holder 51 has a portion in the vicinity of the planned cutting line 71 of the substrate to be processed 61 that has a convex shape vertically upward.
• effective mechanical stress is applied to the part near the planned cutting line 71 of the Karoe substrate 61 to be cut!
• high-quality and high-speed cleaving can be realized more easily.
• the crack 68 is directly generated in the substrate 61 by the preheating unit 20 and the cleaving unit 30 included in the heating and cooling unit 10.
• a cutting wire lead unit that moves in advance of the preheating unit 20 is further provided, and the substrate to be processed is moved relatively along the cutting line 71 with a disk or the like in contact with the surface of the substrate 61 to be processed.
• An indentation (a fine initial crack) having a depth of a few hundredths / zm to several tens / zm may be formed on the surface of 61.
• the heating / cooling unit 10 and the substrate to be processed are moved by moving the substrate 61 to be processed (substrate holder 51 side) relative to the heating / cooling unit 10 by the moving unit 52. Force to achieve relative movement with 61
• the relative movement between the heating / cooling unit 10 and the substrate to be covered 61 may be realized by moving the thermal cooling unit 10 side.
• the force of irradiating the laser beam LB1, LB2 from above on the substrate 61 supported by the substrate holder 51 is not limited to this.
• the present invention can be similarly applied to the case where the substrate to be covered 61 supported by the substrate holder 51 is irradiated with the laser beams LB1 and LB2 from below.
• the holding bars 54A, 54B, 54C, 54D of the substrate holder 51 that supports the substrate 61 to be covered are such that the portion of the substrate 61 in the vicinity of the planned cutting line 71 protrudes vertically downward. It is necessary to support the processed substrate 61 so as to form a shape.
• the holding bar 54A of the substrate holder 51 is configured to adsorb the back surface of the substrate 61 to be processed and fix the substrate 61 to be processed by the adsorbing portion 55 provided on the surface thereof.
• Constrained force Not limited to this, as in the case of the fixed holding bar 57 shown in FIG. 10, the substrate 61 is mechanically clamped from both the front and back sides by the lower clamp part 57a and the upper clamp part 57b. It may be configured to.
• the method of fixing the substrate 61 to be processed is not limited to these, and any other method such as electrostatic adsorption can be used. If the substrate 61 does not move on the holding bar 54A due to the weight of the substrate 61, the substrate 51 need not be forcibly fixed by the holding bar 54A.
• the substrate 61 to be covered may simply be placed on the holding bar 54A.
• the holding bars 54B, 54C, 54D of the substrate holder 51 support the substrate 61 to be moved in a manner such as frictional sliding, but the present invention is not limited to this.
• the air may be supported so as to be movable by blowing air or the like from a blowing part 58a provided on the surface thereof.
• the substrate 61 to be processed after the cleaving process is very easy to move, which can contribute to the high cutting speed of the substrate 61 to be processed.
• the movable holding bar 58 has a structure in which a hole corresponding to the blowing portion 58a is formed in a component member made of metal, rubber, or the like, and a plurality of holes functioning as the blowing portion 58a as the component member. Porous ceramics having the above may be used.
• the holding bars 54B, 54C, 54D of the substrate holder 51 support the substrate 61 to be processed in a manner such as frictional sliding, but the holding bars 54B, 54C, It is also possible to provide a suction hole in a part of 54D and perform weak suction or the like to support the substrate to be processed 61 in a semi-movable state instead of a movable state.

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• Engineering & Computer Science (AREA)
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• Optics & Photonics (AREA)
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• Processing Of Stones Or Stones Resemblance Materials (AREA)
• Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

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• 2006
  • 2006-08-08 WO PCT/JP2006/315658 patent/WO2007020835A1/ja active Application Filing
  • 2006-08-08 JP JP2007530956A patent/JP4815444B2/ja not_active Expired - Fee Related
  • 2006-08-08 KR KR1020087002145A patent/KR100971042B1/ko not_active IP Right Cessation
  • 2006-08-11 TW TW095129475A patent/TW200726559A/zh not_active IP Right Cessation

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