WO2007007782A1 - 多層構造体及びその洗浄方法 - Google Patents

多層構造体及びその洗浄方法 Download PDF

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Publication number
WO2007007782A1
WO2007007782A1 PCT/JP2006/313831 JP2006313831W WO2007007782A1 WO 2007007782 A1 WO2007007782 A1 WO 2007007782A1 JP 2006313831 W JP2006313831 W JP 2006313831W WO 2007007782 A1 WO2007007782 A1 WO 2007007782A1
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WO
WIPO (PCT)
Prior art keywords
film
multilayer structure
cleaning
ceramic
structure according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2006/313831
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Tadahiro Ohmi
Akinobu Teramoto
Hitoshi Morinaga
Yukio Kishi
Hiromichi Ohtaki
Yoshihumi Tsutai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
NTK Ceratec Co Ltd
Original Assignee
Tohoku University NUC
Nihon Ceratec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Nihon Ceratec Co Ltd filed Critical Tohoku University NUC
Priority to CN2006800250759A priority Critical patent/CN101218375B/zh
Priority to US11/988,648 priority patent/US20090133713A1/en
Priority to KR1020087000427A priority patent/KR101306514B1/ko
Publication of WO2007007782A1 publication Critical patent/WO2007007782A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0288—Ultra or megasonic jets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]

Definitions

  • the present invention relates to a part used in an environment where high cleanliness is required, such as a dry process for electronic devices, a medical product manufacturing, a food processing 'manufacturing', a structure used as a member, and a cleaning method thereof. .
  • the microwave plasma processing apparatus includes a processing chamber, a holding base that is disposed in the processing chamber and holds the processing base, a processing base, A shower plate provided at an opposing position, a cover plate disposed on the chassis plate, and a radial rod antenna provided on the cover plate.
  • the shower plate is composed of a plate made of alumina having a large number of gas ejection holes, while the cover plate is also made of alumina.
  • the inner wall of the processing chamber is formed of yttria from the viewpoint of corrosion resistance against alumina and plasma.
  • the inventors previously proposed a method for cleaning a ceramic member constituting various members of a semiconductor manufacturing apparatus in Patent Document 1. According to this cleaning method, the surface of the ceramic member can be cleaned.
  • the method for cleaning ceramic members proposed in Patent Document 1 includes wiping with a highly clean sponge or brush, ultrasonic cleaning with a degreasing liquid, immersion cleaning with organic chemicals, ultrasonic cleaning with ozone water, SPM Pre-cleaning of ceramic members is performed by at least one of cleaning and HF / HNO cleaning.
  • the number of particles having a particle diameter of 0.2 ⁇ m or more on the surface of the ceramic member can be reduced to 2 or less per lmm 2 .
  • Patent Document 1 JP 2004-279481 A
  • Patent Document 2 JP-A-5-339699
  • Patent Document 3 Japanese Patent Laid-Open No. 5-202460
  • One object of the present invention is to provide the same operation and effect as a ceramic member in response to a demand for an increase in the size of a semiconductor manufacturing apparatus or the like, for example, insulation, corrosion resistance in an etching environment, and weight reduction. It is to provide a structure with a very clean surface.
  • Another object of the present invention is to provide a structure having a multilayer structure in order to reduce a burden when a member such as a semiconductor manufacturing apparatus is constituted by a ceramic member alone.
  • Yet another object of the present invention is to provide a multi-layer structure including a surface layer that does not cause peeling even when cleaning is performed to increase cleanliness.
  • Another object of the present invention is to provide a method for depositing a ceramic layer having high adhesion strength as a surface layer for forming the surface of a multilayer structure.
  • Another object of the present invention is to provide a cleaning method for obtaining a highly clean ceramic surface.
  • the present inventors have studied a structure having a multilayer structure instead of constituting a ceramic member for a semiconductor manufacturing apparatus by a single ceramic member. Specifically, a multilayer structure in which a film (specifically, a ceramic film) is deposited on a base material is studied, and the ceramic film deposited on the base material is improved in the deposition method and cleaning method. It has been clarified that a structure having a surface equivalent to the surface of the ceramic member shown in Permissible Document 1 can be obtained.
  • a multilayer structure including a base material and a film formed on the surface of the base material, particles having a particle diameter of 0.2 m or more are formed on the film.
  • a multilayer structure characterized in that the number of adhering particles is 2 or less per lmm 2 is obtained.
  • the substrate is formed of ceramics, metal or a composite material thereof.
  • a multilayer structure according to the second aspect wherein the film is a ceramic film.
  • a multilayer structure according to the third aspect wherein the ceramic film is a sprayed film deposited on the substrate by spraying.
  • a multilayer structure according to the fourth aspect wherein the ceramic film is a ceramic film deposited on the substrate by a CVD method.
  • the ceramic film is a ceramic film deposited on the substrate by a PVD method.
  • a seventh aspect of the present invention there is obtained a multilayer structure characterized in that the ceramic film is a ceramic film deposited on the substrate by a sol-gel method.
  • the ceramic film is a ceramic film deposited on a sprayed film by any of the methods according to claims 5 to 7. It is done.
  • a multilayer structure characterized in that the adhesion strength of the ceramic film is lOMPa or more can be obtained.
  • a method for cleaning a multi-layer structure and a film formed on a substrate and the substrate surface Nio Te, 5WZcm 2 more 30WZcm 2 following A method for cleaning a multilayer structure comprising the step of cleaning the film by applying ultrasonic waves can be obtained.
  • the eleventh aspect of the present invention in the tenth aspect, there is obtained a method for cleaning a multilayer structure, wherein the ultrasonic cleaning is performed using a nozzle type cleaning apparatus.
  • the ultrasonic cleaning is selected from the group power consisting of hydrogen, carbon dioxide, and ammonia power in ultrapure water.
  • Ga A method for cleaning a multilayer structure is obtained, which is performed by preparing a solution in which solution is dissolved and applying ultrasonic waves to the solution.
  • the present invention by using a layered structure having a ceramic layer on the surface, there is an effect that it is possible to quickly and economically cope with an increase in size of a structural member. Furthermore, since the ceramic layer deposited on the base material can be cleaned with high cleanliness, high cleanliness can be maintained. Furthermore, since the adhesion strength of the deposited ceramic layer is high, even when an ultrasonic wave of 5 WZcm 2 or more and 30 WZcm 2 or less is applied in highly clean cleaning, peeling or the like does not occur.
  • FIG. 1 A first figure.
  • FIG. 2 is a cross-sectional view of the multilayer structure according to the first embodiment of the present invention.
  • FIG. 3 is a sample shape diagram for measuring the number of attached particles.
  • FIG. 4 is a schematic view for explaining an atmospheric open type thermal CVD apparatus for forming a multilayer structure according to a second embodiment of the present invention.
  • (a) and (b) are diagrams simulating a scanning electron microscope (SEM) photograph showing a cross section and a plane of a multilayer structure formed by the CVD apparatus shown in FIG.
  • SEM scanning electron microscope
  • FIG. 6 (a) and (b) are diagrams for explaining the sol-gel method for forming a multilayer structure according to a third embodiment of the present invention in the order of steps.
  • FIG. 1 shows the performance of highly clean cleaning of a Y 2 O film by various production methods according to the present invention.
  • FIG. 6 is a diagram illustrating the relationship between the number of pulses and ultrasonic output. As shown in FIG. 1, since the adhesion strength of the deposited ceramic layer is high, even if an ultrasonic wave of 5 WZcm 2 or more and 30 WZcm 2 or less is applied for highly clean cleaning, peeling or the like does not occur.
  • the multilayer structure according to the first embodiment of the present invention includes, for example, a base material 10 and a ceramic layer 11 (that is, plasma) in which yttria is deposited on the surface of the base material by plasma spraying. Sprayed YO layer).
  • the substrate 10 has a diameter of 40 mm,
  • Patent Document 2 or Patent Document 3 describes plasma spraying.
  • a thermal spraying apparatus can be used.
  • ceramic films are suitable for semiconductor manufacturing equipment as Y 2 O, Al 2 O,
  • MgO and its compounds are preferred.
  • the ceramic layer 11 is formed directly on the surface of the aluminum alloy substrate 10, but the surface of the aluminum alloy substrate 10 is anodized to form an anodic oxide film. After the formation, a plasma sprayed film may be formed. That is, the layer formed on the substrate 10 may be a composite layer.
  • a plasma sprayed film formed by plasma spraying does not provide a dense ceramic layer, and the usual cleaning technique requires high quality because deposits and the like derived from the manufacturing process remain in the pores. It was unsuitable for forming a member.
  • a multilayer structure that can be sufficiently used as a member for a semiconductor manufacturing apparatus is obtained by the developed cleaning method without causing peeling or loss of the film.
  • the contaminants that can be visually confirmed are removed by ultrasonic cleaning in pure water, and then subjected to pre-cleaning using a sponge for a tarine room and a degreasing liquid. 4 washes were applied.
  • the first cleaning process is an organic substance removal process, and ozone-dissolved ultrapure water is effective.
  • the second step is hydrogen, ammonia, and the group power that is also composed of diacid and carbon.
  • Cleaning using a nozzle type ultrasonic cleaning device using ultra pure water in which selected gas is dissolved (abbreviated as nozzle): Bath type super This is a process in which at least one cleaning method is selected from cleaning methods (abbreviated as baths) using a sonic cleaning device.
  • the third step is a metal removal step
  • the fourth step is a rinsing step, in which ultrapure water alone or ultrapure water in which a selected gas such as hydrogen, ammonia, carbon dioxide is dissolved is dissolved. Rinse with water.
  • Tables 1 to 4 below show the particle measurement results and the ultrasonic cleaning conditions applied to the examples of the present invention.
  • Nozzle type 5 1.1 ⁇
  • the ultrasonic output is 4 WZcm 2 or less, there are many remaining partitions, which is not preferable for use in a highly clean environment such as a semiconductor manufacturing apparatus.
  • the ultrasonic output is 5 W / cm 2 or more, the number of particles decreases to 2 / mm 2 , and the ultrasonic method is more effective in reducing particles than the nozzle type force s bath type method. It turned out to be.
  • the ultrasonic power exceeded 30 WZcm 2 while applying pressure, defects such as peeling occurred in part of the ceramic film.
  • Adhesive strength As a result of measurement by a measuring method according to IS H8666, it was confirmed that it was at least lMPa. Further, even when the composite film was formed on the substrate 10, the plasma sprayed film forming the uppermost layer had an adhesion strength of 12 MPa or more.
  • a multilayer structure according to a second embodiment of the present invention will be described with reference to FIG.
  • the multilayer structure according to this example is formed into a film using the atmospheric open type thermal CVD apparatus shown in FIG. 4, and the CVD apparatus includes a flow meter 21, a vaporizer 23, and a nozzle 25.
  • the silicon wafer that composes 10 is mounted on the heater 27, and the silicon wafer shown is 200mm Have a diameter of As illustrated, the vaporizer 23 and the nozzle 25 are covered with a heater 29.
  • the vaporizer 23 into which nitrogen gas (N) is introduced via the flow meter 21 contains Y.
  • An organometallic complex is stored as a raw material, and the raw material is evaporated by heating and guided onto the substrate 10 through the nozzle 25.
  • a Y 2 O film is deposited as a deposited film on the silicon wafer forming the base material 10. This deposited film has higher adhesion strength than plasma sprayed film.
  • the number of adhered particles was less than that of the plasma sprayed film. That is, the deposited film had an adhesion number of particles having a particle diameter of 0.2 m or more, 2 particles of Z mm 2 or less, and an adhesion strength of 1 OMPa or more.
  • FIGS. 5 (a) and 5 (b) a cross section and a surface when a silicon wafer is used as a substrate and a Y 2 O film is formed on the silicon wafer by the CVD apparatus shown in FIG.
  • the illustrated Y 2 O film has a thickness of 2 m and is based on a vaporization temperature of 240 ° C.
  • the film was formed with material 10 kept at 500 ° C.
  • material 10 kept at 500 ° C.
  • the Y 2 O film formed by evaporation had a very flat surface. For this reason, the sample
  • the samples formed on the ceramic substrate and the SUS substrate were washed by the above-mentioned method.
  • the ultrasonic output was 5 WZcm 2 or more.
  • the adhered particles of 0.2 m or more could be reduced to 2 Zmm 2 or less.
  • the multilayer structure is obtained by first applying the ceramic precursor 33 on the base material 10 using the spray gun 31 and then betating in the oven 35. It is done.
  • Precursor 33 formed by spray gun 31 in oven 35 300 By performing beta at a temperature of about ° C, a highly pure and dense ceramic film, for example, an YO film can be obtained. In this way, the technique for forming the Yo film is here
  • a high-purity ceramic film can be easily formed at a relatively low temperature.
  • the Ra of the substrate 10 is 0.18 / z m.
  • the precursor is applied by the spray gun 31 .
  • the precursor may be applied by a dip method.
  • the present invention can be similarly applied to the case of forming other ceramic films.
  • an alumina alloy, aluminum, or a silicon substrate is used as the base material
  • other metals, ceramics, or a composite material thereof may be used.
  • the multilayer structure according to the present invention is not limited to this. It can be applied to various devices as an alternative to ceramic members. It can also be applied to parts and components used in environments where high cleanliness is required, such as for the manufacture of medical products and food processing and manufacturing, as well as semiconductor and liquid crystal manufacturing equipment. possibility
  • the multilayer structure according to the present invention can be applied to various apparatuses as a substitute for the ceramic status member without being limited thereto.
  • the present invention can be applied not only to semiconductors and liquid crystal manufacturing apparatuses, but also to structures used as parts and members used in environments where high cleanliness is required, such as for the manufacture of medical products and food processing.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PCT/JP2006/313831 2005-07-14 2006-07-12 多層構造体及びその洗浄方法 Ceased WO2007007782A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2006800250759A CN101218375B (zh) 2005-07-14 2006-07-12 多层构造体及其清洗方法
US11/988,648 US20090133713A1 (en) 2005-07-14 2006-07-12 Multilayer structural body and method for cleaning the same
KR1020087000427A KR101306514B1 (ko) 2005-07-14 2006-07-12 다층 구조체 및 그 세정 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-206071 2005-07-14
JP2005206071A JP4813115B2 (ja) 2005-07-14 2005-07-14 半導体製造装置用部材及びその洗浄方法

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WO2007007782A1 true WO2007007782A1 (ja) 2007-01-18

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US (1) US20090133713A1 (enExample)
JP (1) JP4813115B2 (enExample)
KR (1) KR101306514B1 (enExample)
CN (1) CN101218375B (enExample)
TW (1) TWI465155B (enExample)
WO (1) WO2007007782A1 (enExample)

Cited By (2)

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JP2013539914A (ja) * 2010-09-28 2013-10-28 ケーエルエー−テンカー コーポレイション Ｉｎ−ｓｉｔｕ測定用のセンサ・ウェーハ上の耐エッチング・コーティング
WO2023026331A1 (ja) * 2021-08-23 2023-03-02 株式会社日立ハイテク プラズマ処理装置用保護皮膜の洗浄方法

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US8138060B2 (en) 2007-10-26 2012-03-20 Shin-Etsu Chemical Co., Ltd. Wafer
JP2009124128A (ja) * 2007-10-26 2009-06-04 Shin Etsu Chem Co Ltd ウエハ
JP5245365B2 (ja) * 2007-11-12 2013-07-24 信越化学工業株式会社 希土類水酸化物被膜及び希土類酸化物被膜の形成方法
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