JP4813115B2 - 半導体製造装置用部材及びその洗浄方法 - Google Patents

半導体製造装置用部材及びその洗浄方法 Download PDF

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Publication number
JP4813115B2
JP4813115B2 JP2005206071A JP2005206071A JP4813115B2 JP 4813115 B2 JP4813115 B2 JP 4813115B2 JP 2005206071 A JP2005206071 A JP 2005206071A JP 2005206071 A JP2005206071 A JP 2005206071A JP 4813115 B2 JP4813115 B2 JP 4813115B2
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JP
Japan
Prior art keywords
ceramic film
cleaning
semiconductor manufacturing
manufacturing apparatus
oxide ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005206071A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007027329A5 (enExample
JP2007027329A (ja
Inventor
忠弘 大見
章伸 寺本
均 森永
幸男 岸
浩通 大滝
美史 傳井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
NTK Ceratec Co Ltd
Original Assignee
Tohoku University NUC
Nihon Ceratec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2005206071A priority Critical patent/JP4813115B2/ja
Application filed by Tohoku University NUC, Nihon Ceratec Co Ltd filed Critical Tohoku University NUC
Priority to PCT/JP2006/313831 priority patent/WO2007007782A1/ja
Priority to CN2006800250759A priority patent/CN101218375B/zh
Priority to US11/988,648 priority patent/US20090133713A1/en
Priority to KR1020087000427A priority patent/KR101306514B1/ko
Priority to TW095125606A priority patent/TWI465155B/zh
Publication of JP2007027329A publication Critical patent/JP2007027329A/ja
Publication of JP2007027329A5 publication Critical patent/JP2007027329A5/ja
Application granted granted Critical
Publication of JP4813115B2 publication Critical patent/JP4813115B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0288—Ultra or megasonic jets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2005206071A 2005-07-14 2005-07-14 半導体製造装置用部材及びその洗浄方法 Expired - Fee Related JP4813115B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005206071A JP4813115B2 (ja) 2005-07-14 2005-07-14 半導体製造装置用部材及びその洗浄方法
CN2006800250759A CN101218375B (zh) 2005-07-14 2006-07-12 多层构造体及其清洗方法
US11/988,648 US20090133713A1 (en) 2005-07-14 2006-07-12 Multilayer structural body and method for cleaning the same
KR1020087000427A KR101306514B1 (ko) 2005-07-14 2006-07-12 다층 구조체 및 그 세정 방법
PCT/JP2006/313831 WO2007007782A1 (ja) 2005-07-14 2006-07-12 多層構造体及びその洗浄方法
TW095125606A TWI465155B (zh) 2005-07-14 2006-07-13 半導體製造裝置用構件及其洗淨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005206071A JP4813115B2 (ja) 2005-07-14 2005-07-14 半導体製造装置用部材及びその洗浄方法

Publications (3)

Publication Number Publication Date
JP2007027329A JP2007027329A (ja) 2007-02-01
JP2007027329A5 JP2007027329A5 (enExample) 2008-07-17
JP4813115B2 true JP4813115B2 (ja) 2011-11-09

Family

ID=37637172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005206071A Expired - Fee Related JP4813115B2 (ja) 2005-07-14 2005-07-14 半導体製造装置用部材及びその洗浄方法

Country Status (6)

Country Link
US (1) US20090133713A1 (enExample)
JP (1) JP4813115B2 (enExample)
KR (1) KR101306514B1 (enExample)
CN (1) CN101218375B (enExample)
TW (1) TWI465155B (enExample)
WO (1) WO2007007782A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8138060B2 (en) 2007-10-26 2012-03-20 Shin-Etsu Chemical Co., Ltd. Wafer
JP2009124128A (ja) * 2007-10-26 2009-06-04 Shin Etsu Chem Co Ltd ウエハ
JP5245365B2 (ja) * 2007-11-12 2013-07-24 信越化学工業株式会社 希土類水酸化物被膜及び希土類酸化物被膜の形成方法
JP4591722B2 (ja) * 2008-01-24 2010-12-01 信越化学工業株式会社 セラミックス溶射部材の製造方法
JP5274065B2 (ja) * 2008-03-19 2013-08-28 株式会社日本セラテック 酸化物膜形成方法
CN101590372A (zh) * 2009-06-29 2009-12-02 东莞市硕源电子材料有限公司 一种用于液晶过滤的过滤膜的清洁方法
US10720350B2 (en) * 2010-09-28 2020-07-21 Kla-Tencore Corporation Etch-resistant coating on sensor wafers for in-situ measurement
CN103987664B (zh) 2011-12-06 2017-03-08 德尔塔阀门公司 龙头中的臭氧分配
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US9604249B2 (en) * 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US20170022595A1 (en) * 2014-03-31 2017-01-26 Kabushiki Kaisha Toshiba Plasma-Resistant Component, Method For Manufacturing The Plasma-Resistant Component, And Film Deposition Apparatus Used For Manufacturing The Plasma-Resistant Component
CN115093008B (zh) 2015-12-21 2024-05-14 德尔塔阀门公司 包括消毒装置的流体输送系统
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts
WO2021002339A1 (ja) * 2019-07-03 2021-01-07 時田シーブイディーシステムズ株式会社 複合膜、部品及び製造方法
JP6994694B2 (ja) * 2020-02-27 2022-01-14 信越化学工業株式会社 成膜用霧化装置及びこれを用いた成膜装置
KR102649715B1 (ko) 2020-10-30 2024-03-21 세메스 주식회사 표면 처리 장치 및 표면 처리 방법
CN112563111A (zh) * 2020-12-08 2021-03-26 富乐德科技发展（天津）有限公司 一种去除陶瓷表面沉积的金属氧化物的清洗方法
US20220415617A1 (en) * 2021-06-25 2022-12-29 Applied Materials, Inc. Remote plasma apparatus for generating high-power density microwave plasma
JP7358655B2 (ja) * 2021-08-23 2023-10-10 株式会社日立ハイテク プラズマ処理装置用保護皮膜の洗浄方法
CN116936348B (zh) * 2023-09-07 2024-01-30 浙江晶越半导体有限公司 一种晶片表面的清洗方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150768A (ja) * 1996-07-05 2005-06-09 Toshiba Corp 洗浄方法および電子部品の洗浄方法
US6082373A (en) * 1996-07-05 2000-07-04 Kabushiki Kaisha Toshiba Cleaning method
JP3274389B2 (ja) * 1996-08-12 2002-04-15 株式会社東芝 半導体基板の洗浄方法
JPH1064868A (ja) * 1996-08-15 1998-03-06 Dainippon Screen Mfg Co Ltd 基板洗浄装置および基板洗浄方法
JP3494554B2 (ja) * 1997-06-26 2004-02-09 東芝セラミックス株式会社 半導体用治具およびその製造方法
JPH11265871A (ja) * 1998-03-16 1999-09-28 Tokyo Electron Ltd 洗浄処理方法
JP4294176B2 (ja) * 1999-09-13 2009-07-08 株式会社山形信越石英 表面が砂目加工された石英物品の洗浄方法
TW471053B (en) * 1999-12-22 2002-01-01 Saint Gobain Ceramics Process for cleaning ceramic articles
US6927176B2 (en) * 2000-06-26 2005-08-09 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
WO2002015255A1 (en) * 2000-08-11 2002-02-21 Chem Trace Corporation System and method for cleaning semiconductor fabrication equipment parts
US6488038B1 (en) * 2000-11-06 2002-12-03 Semitool, Inc. Method for cleaning semiconductor substrates
US6613442B2 (en) * 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
JP2002261062A (ja) * 2001-03-05 2002-09-13 Texas Instr Japan Ltd 半導体ウェハ上の粒子を除去する方法及び装置
US6730176B2 (en) * 2001-07-09 2004-05-04 Birol Kuyel Single wafer megasonic cleaner method, system, and apparatus
US7156111B2 (en) * 2001-07-16 2007-01-02 Akrion Technologies, Inc Megasonic cleaning using supersaturated cleaning solution
JP2003112997A (ja) * 2001-10-05 2003-04-18 Shin Etsu Handotai Co Ltd エピタキシャルウエーハの製造方法
JP2003197878A (ja) * 2001-10-15 2003-07-11 Hitachi Ltd メモリ半導体装置およびその製造方法
JP3876167B2 (ja) * 2002-02-13 2007-01-31 川崎マイクロエレクトロニクス株式会社 洗浄方法および半導体装置の製造方法
US6776873B1 (en) * 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US6729339B1 (en) * 2002-06-28 2004-05-04 Lam Research Corporation Method and apparatus for cooling a resonator of a megasonic transducer
KR100772740B1 (ko) * 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 플라즈마 처리 용기 내부재

Also Published As

Publication number Publication date
CN101218375B (zh) 2012-09-05
CN101218375A (zh) 2008-07-09
TW200715917A (en) 2007-04-16
KR101306514B1 (ko) 2013-09-09
WO2007007782A1 (ja) 2007-01-18
TWI465155B (zh) 2014-12-11
US20090133713A1 (en) 2009-05-28
JP2007027329A (ja) 2007-02-01
KR20080034119A (ko) 2008-04-18

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