KR101306514B1 - 다층 구조체 및 그 세정 방법 - Google Patents
다층 구조체 및 그 세정 방법 Download PDFInfo
- Publication number
- KR101306514B1 KR101306514B1 KR1020087000427A KR20087000427A KR101306514B1 KR 101306514 B1 KR101306514 B1 KR 101306514B1 KR 1020087000427 A KR1020087000427 A KR 1020087000427A KR 20087000427 A KR20087000427 A KR 20087000427A KR 101306514 B1 KR101306514 B1 KR 101306514B1
- Authority
- KR
- South Korea
- Prior art keywords
- ceramic film
- oxide ceramic
- substrate
- film
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0288—Ultra or megasonic jets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
- Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- Coating By Spraying Or Casting (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2005-00206071 | 2005-07-14 | ||
| JP2005206071A JP4813115B2 (ja) | 2005-07-14 | 2005-07-14 | 半導体製造装置用部材及びその洗浄方法 |
| PCT/JP2006/313831 WO2007007782A1 (ja) | 2005-07-14 | 2006-07-12 | 多層構造体及びその洗浄方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20080034119A KR20080034119A (ko) | 2008-04-18 |
| KR101306514B1 true KR101306514B1 (ko) | 2013-09-09 |
Family
ID=37637172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087000427A Expired - Fee Related KR101306514B1 (ko) | 2005-07-14 | 2006-07-12 | 다층 구조체 및 그 세정 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090133713A1 (enExample) |
| JP (1) | JP4813115B2 (enExample) |
| KR (1) | KR101306514B1 (enExample) |
| CN (1) | CN101218375B (enExample) |
| TW (1) | TWI465155B (enExample) |
| WO (1) | WO2007007782A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8138060B2 (en) | 2007-10-26 | 2012-03-20 | Shin-Etsu Chemical Co., Ltd. | Wafer |
| JP2009124128A (ja) * | 2007-10-26 | 2009-06-04 | Shin Etsu Chem Co Ltd | ウエハ |
| JP5245365B2 (ja) * | 2007-11-12 | 2013-07-24 | 信越化学工業株式会社 | 希土類水酸化物被膜及び希土類酸化物被膜の形成方法 |
| JP4591722B2 (ja) * | 2008-01-24 | 2010-12-01 | 信越化学工業株式会社 | セラミックス溶射部材の製造方法 |
| JP5274065B2 (ja) * | 2008-03-19 | 2013-08-28 | 株式会社日本セラテック | 酸化物膜形成方法 |
| CN101590372A (zh) * | 2009-06-29 | 2009-12-02 | 东莞市硕源电子材料有限公司 | 一种用于液晶过滤的过滤膜的清洁方法 |
| US10720350B2 (en) * | 2010-09-28 | 2020-07-21 | Kla-Tencore Corporation | Etch-resistant coating on sensor wafers for in-situ measurement |
| CN103987664B (zh) | 2011-12-06 | 2017-03-08 | 德尔塔阀门公司 | 龙头中的臭氧分配 |
| US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
| US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
| US9090046B2 (en) | 2012-04-16 | 2015-07-28 | Applied Materials, Inc. | Ceramic coated article and process for applying ceramic coating |
| US9604249B2 (en) * | 2012-07-26 | 2017-03-28 | Applied Materials, Inc. | Innovative top-coat approach for advanced device on-wafer particle performance |
| US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
| US9865434B2 (en) | 2013-06-05 | 2018-01-09 | Applied Materials, Inc. | Rare-earth oxide based erosion resistant coatings for semiconductor application |
| US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
| US20170022595A1 (en) * | 2014-03-31 | 2017-01-26 | Kabushiki Kaisha Toshiba | Plasma-Resistant Component, Method For Manufacturing The Plasma-Resistant Component, And Film Deposition Apparatus Used For Manufacturing The Plasma-Resistant Component |
| CN115093008B (zh) | 2015-12-21 | 2024-05-14 | 德尔塔阀门公司 | 包括消毒装置的流体输送系统 |
| US11047035B2 (en) | 2018-02-23 | 2021-06-29 | Applied Materials, Inc. | Protective yttria coating for semiconductor equipment parts |
| WO2021002339A1 (ja) * | 2019-07-03 | 2021-01-07 | 時田シーブイディーシステムズ株式会社 | 複合膜、部品及び製造方法 |
| JP6994694B2 (ja) * | 2020-02-27 | 2022-01-14 | 信越化学工業株式会社 | 成膜用霧化装置及びこれを用いた成膜装置 |
| KR102649715B1 (ko) | 2020-10-30 | 2024-03-21 | 세메스 주식회사 | 표면 처리 장치 및 표면 처리 방법 |
| CN112563111A (zh) * | 2020-12-08 | 2021-03-26 | 富乐德科技发展(天津)有限公司 | 一种去除陶瓷表面沉积的金属氧化物的清洗方法 |
| US20220415617A1 (en) * | 2021-06-25 | 2022-12-29 | Applied Materials, Inc. | Remote plasma apparatus for generating high-power density microwave plasma |
| JP7358655B2 (ja) * | 2021-08-23 | 2023-10-10 | 株式会社日立ハイテク | プラズマ処理装置用保護皮膜の洗浄方法 |
| CN116936348B (zh) * | 2023-09-07 | 2024-01-30 | 浙江晶越半导体有限公司 | 一种晶片表面的清洗方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11265871A (ja) * | 1998-03-16 | 1999-09-28 | Tokyo Electron Ltd | 洗浄処理方法 |
| WO2004003962A2 (en) * | 2002-06-27 | 2004-01-08 | Lam Research Corporation | Thermal sprayed yttria-containing coating for plasma reactor |
| JP2004523649A (ja) * | 2000-12-29 | 2004-08-05 | ラム リサーチ コーポレーション | 半導体処理装置の窒化ホウ素又はイットリア複合材料の構成部品及びその製造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005150768A (ja) * | 1996-07-05 | 2005-06-09 | Toshiba Corp | 洗浄方法および電子部品の洗浄方法 |
| US6082373A (en) * | 1996-07-05 | 2000-07-04 | Kabushiki Kaisha Toshiba | Cleaning method |
| JP3274389B2 (ja) * | 1996-08-12 | 2002-04-15 | 株式会社東芝 | 半導体基板の洗浄方法 |
| JPH1064868A (ja) * | 1996-08-15 | 1998-03-06 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置および基板洗浄方法 |
| JP3494554B2 (ja) * | 1997-06-26 | 2004-02-09 | 東芝セラミックス株式会社 | 半導体用治具およびその製造方法 |
| JP4294176B2 (ja) * | 1999-09-13 | 2009-07-08 | 株式会社山形信越石英 | 表面が砂目加工された石英物品の洗浄方法 |
| TW471053B (en) * | 1999-12-22 | 2002-01-01 | Saint Gobain Ceramics | Process for cleaning ceramic articles |
| US6927176B2 (en) * | 2000-06-26 | 2005-08-09 | Applied Materials, Inc. | Cleaning method and solution for cleaning a wafer in a single wafer process |
| WO2002015255A1 (en) * | 2000-08-11 | 2002-02-21 | Chem Trace Corporation | System and method for cleaning semiconductor fabrication equipment parts |
| US6488038B1 (en) * | 2000-11-06 | 2002-12-03 | Semitool, Inc. | Method for cleaning semiconductor substrates |
| JP2002261062A (ja) * | 2001-03-05 | 2002-09-13 | Texas Instr Japan Ltd | 半導体ウェハ上の粒子を除去する方法及び装置 |
| US6730176B2 (en) * | 2001-07-09 | 2004-05-04 | Birol Kuyel | Single wafer megasonic cleaner method, system, and apparatus |
| US7156111B2 (en) * | 2001-07-16 | 2007-01-02 | Akrion Technologies, Inc | Megasonic cleaning using supersaturated cleaning solution |
| JP2003112997A (ja) * | 2001-10-05 | 2003-04-18 | Shin Etsu Handotai Co Ltd | エピタキシャルウエーハの製造方法 |
| JP2003197878A (ja) * | 2001-10-15 | 2003-07-11 | Hitachi Ltd | メモリ半導体装置およびその製造方法 |
| JP3876167B2 (ja) * | 2002-02-13 | 2007-01-31 | 川崎マイクロエレクトロニクス株式会社 | 洗浄方法および半導体装置の製造方法 |
| US6776873B1 (en) * | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
| US6729339B1 (en) * | 2002-06-28 | 2004-05-04 | Lam Research Corporation | Method and apparatus for cooling a resonator of a megasonic transducer |
| KR100772740B1 (ko) * | 2002-11-28 | 2007-11-01 | 동경 엘렉트론 주식회사 | 플라즈마 처리 용기 내부재 |
-
2005
- 2005-07-14 JP JP2005206071A patent/JP4813115B2/ja not_active Expired - Fee Related
-
2006
- 2006-07-12 KR KR1020087000427A patent/KR101306514B1/ko not_active Expired - Fee Related
- 2006-07-12 US US11/988,648 patent/US20090133713A1/en not_active Abandoned
- 2006-07-12 WO PCT/JP2006/313831 patent/WO2007007782A1/ja not_active Ceased
- 2006-07-12 CN CN2006800250759A patent/CN101218375B/zh not_active Expired - Fee Related
- 2006-07-13 TW TW095125606A patent/TWI465155B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11265871A (ja) * | 1998-03-16 | 1999-09-28 | Tokyo Electron Ltd | 洗浄処理方法 |
| JP2004523649A (ja) * | 2000-12-29 | 2004-08-05 | ラム リサーチ コーポレーション | 半導体処理装置の窒化ホウ素又はイットリア複合材料の構成部品及びその製造方法 |
| WO2004003962A2 (en) * | 2002-06-27 | 2004-01-08 | Lam Research Corporation | Thermal sprayed yttria-containing coating for plasma reactor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101218375B (zh) | 2012-09-05 |
| JP4813115B2 (ja) | 2011-11-09 |
| CN101218375A (zh) | 2008-07-09 |
| TW200715917A (en) | 2007-04-16 |
| WO2007007782A1 (ja) | 2007-01-18 |
| TWI465155B (zh) | 2014-12-11 |
| US20090133713A1 (en) | 2009-05-28 |
| JP2007027329A (ja) | 2007-02-01 |
| KR20080034119A (ko) | 2008-04-18 |
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