Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/10—Deposition of organic active material
  • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
  • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/04—Coating on selected surface areas, e.g. using masks
  • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/24—Vacuum evaporation
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/24—Vacuum evaporation
  • C23C14/243—Crucibles for source material
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/24—Vacuum evaporation
  • C23C14/246—Replenishment of source material
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02656—Special treatments
  • H01L21/02664—Aftertreatments
  • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
  • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
  • H01L21/02678—Beam shaping, e.g. using a mask
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
  • H10K77/10—Substrates, e.g. flexible substrates
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• Film forming apparatus film forming method, and organic EL element manufacturing method
• the present invention relates to a film forming apparatus, a film forming method, and an organic EL element manufacturing method.
• a chuck for holding the substrate in a planar shape, a mask formed with a predetermined opening pattern and made of a magnetic material, and the mask as the substrate
• a configuration having a magnet fixed on top There is a configuration having a magnet fixed on top.
• the substrate is mounted and held on the surface of the chuck, and a mask is placed on the substrate. This mask is fixed on the substrate by the magnetic force of a magnet provided on the back surface of the chuck.
• Patent Document 1 that discloses a thin film forming apparatus, the permanent magnet is moved away from the substrate when the mask is fixed on the substrate, and the permanent magnet is moved closer to the substrate after the mask is placed on the substrate.
• Patent Document 1 Japanese Patent Laid-Open No. 2004-79349
• a mask having a configuration in which the periphery of a mask film is fixed by a mask frame is generally used.
• the mask film is a thin metal film made of a magnetic material having a predetermined opening pattern.
• the mask frame has a hard frame structure that holds the periphery of the mask film.
• An object of the present invention is to provide a film forming apparatus, a film forming method and a method for manufacturing an organic EL element, which can shorten the manufacturing time.
• the second object is to provide a film forming apparatus, a film forming method, and a method for manufacturing an organic EL element that can prevent mask deformation.
• a film forming apparatus capable of forming a thin film in accordance with a mask pattern by bonding a mask to a substrate and making the mask magnetic. And a magnet for bonding the mask to the substrate, the stroke of the magnet being restricted by a movement restricting means placed within a limit position where the attracting action to the mask reaches. It is characterized by that.
• the magnet is provided in an area range corresponding to the planar size of the mask, and the magnetic force acting on the central portion of the mask is weaker than the magnetic force acting on the peripheral portion of the mask. It is characterized by
• a plurality of the magnets are provided on the magnet arrangement plate.
• a plurality of magnets may be arranged in a plane at lattice point positions on the plane.
• the movement restricting means is provided in a chuck on which a substrate is mounted, and is capable of regulating the stroke of a magnet that comes in contact with and separates from the chuck.
• the chuck and the mask can be configured to be rotatable in the horizontal direction. If the movement limiting means is constituted by a set screw, the structure can be made simpler.
• a mask and a magnet are arranged at a position where the substrate is sandwiched, and the mask placed on the substrate is fixed by the magnetic force of the magnet, and is provided on the mask.
• Maximum position where force is limited to the mask on the surface side of the substrate Stroke regulation within the range of the separation position, and moving the magnet within this stroke regulation range, while moving the magnet at the maximum separation position of the magnet, the mask is separated from the substrate and the substrate is replaced. It is characterized in that film formation is repeated.
• the mask may be bonded to the substrate surface in advance of the substrate chucking, and after the chucking in this bonded state, the magnet may be moved closer to attract the mask to the substrate surface.
• the present invention provides a film forming method in which a mask and a magnet are arranged at a position sandwiching the substrate, and a shape corresponding to an opening pattern provided in the mask is formed on the surface of the substrate, the substrate and the mask ,
• a mask and a magnet are disposed at a position where the substrate is sandwiched, and the mask placed on the substrate is fixed by the magnetic force of the magnet.
• a method of manufacturing an organic EL element in which a pixel pattern of an organic EL element corresponding to an opening pattern provided in a mask is formed on a surface of the substrate, wherein the magnet moves while restricting a moving amount of the magnet by a set screw. And a step of moving the mask in the direction of moving away from the substrate force. The step of moving the mask in the direction of moving away from the substrate.
• the magnetic force of the magnet does not affect the mask and the mask moves. Sometimes it can be prevented from being stretched by magnetic force. As a result, the mask can be prevented from being deformed, so that the opening pattern provided in the mask is not deformed even if the mask is desorbed a plurality of times, and an accurate film formation pattern can be formed on the substrate.
• the movement restriction means allows the movement amount of the magnet (magnet arrangement plate) to be applied to the chucked substrate.
• the limit value for applying the attractive magnetic force to the bonded mask is regulated as the maximum stroke position. As a result, the mask can be removed and the substrate replaced while moving the magnet within the minimum stroke range, so the tact time can be greatly shortened. Therefore, the manufacturing time can be shortened.
• the magnetic force of the magnet can be applied to the entire surface of the mask. Since the magnetic force of the magnet acting on the center of the mask is weaker than the magnetic force acting on the peripheral edge of the mask, if a certain gap is required between the substrate and the mask, such as during alignment, the magnetic force A uniform gap can be created between the substrate and the mask by acting uniformly on the strong peripheral portion and the central portion where the film rigidity is weak. Even if the thickness of the film, the thickness of the chuck, and the thickness of the substrate are different, it is possible to cope with this by adjusting the magnetic force with respect to the peripheral portion and the central portion. Furthermore, by arranging a plurality of magnets on the magnet arrangement plate, the magnetic force of the magnet acting on the central portion of the mask can be made weaker than the magnetic force acting on the peripheral portion of the mask.
• the glass substrate mounted and held on the chuck also rotates in a horizontal plane.
• positioning board, a magnet, a mask, etc. rotate with these. Therefore, by rotating the chuck or the like during film formation, a film having a uniform thickness can be obtained within the substrate surface.
• the magnetic force of the magnet will not affect the mask and the position of the mask and substrate will not shift.
• the amount of movement of the magnet is regulated, so that the manufacturing time can be shortened, and the magnet is mounted on the substrate prior to moving the mask away from the substrate force. Since it is moved away from the force, the magnetic force of the magnet acting on the mask can be weakened, and deformation of the mask can be prevented.
• FIG. 1 is an explanatory diagram of a device upper mechanism.
• FIG. 2 is an explanatory diagram of a vacuum evaporation apparatus.
• FIG. 3 is a schematic bottom view of a magnet mounting plate on which magnets are mounted.
• FIG. 4 is an explanatory diagram of movement restriction means.
• FIG. 5 is an explanatory diagram of alignment between a glass substrate and a mask.
• FIG. 6 is an explanatory diagram when the mask is put on the glass substrate.
• FIG. 1 is an explanatory diagram of an upper mechanism of a vacuum vapor deposition apparatus according to an embodiment.
• Fig. 2 is an explanatory diagram of the vacuum evaporation system.
• the vacuum deposition apparatus 10 has a schematic configuration in which an evaporation source 14 (supply source) of the organic material 12 is provided at the bottom and an apparatus upper mechanism 16 is provided at the upper part thereof.
• the apparatus upper mechanism 16 includes a chuck 18, a magnet arrangement plate 20 having a magnet 22, a movement limiting means 24, a base plate clamp 26 and a mask clamp 28.
• the evaporation source 14 of the organic material 12 includes a crucible 14a into which the organic material 12 is placed, and a heater 14b that heats and evaporates (sublimates) the organic material 12 is provided on the outer surface of the crucible 14a. .
• the chuck 18 provided on the upper portion of the vacuum vapor deposition apparatus 10 is disposed so as to face the crucible 14a and is a flat plate disposed along the horizontal direction. As a result, the chuck 18 can hold the glass substrate 32 in a flat shape at the portion facing the crucible 14a.
• the chuck 18 can be horizontally rotated by a rotation mechanism (not shown) provided on the outer upper portion of the apparatus main body 30.
• the magnet arrangement plate 20 is a flat plate and is arranged so as to be movable in a direction approaching and separating from the upper surface of the chuck 18, that is, the back surface of the glass substrate 32.
• the magnet arrangement plate 20 is suspended by a support shaft 20 a penetrating the top plate portion of the device body 30.
• a horizontal support portion 20b is connected to the upper end of the support shaft 20a.
• An expansion / contraction means 34 is provided between the horizontal support portion 20b and the top plate portion of the apparatus body 30. 0 can be raised and lowered.
• the expansion / contraction means 34 may be an actuator such as an air cylinder as long as it can be expanded and contracted vertically.
• FIG. 3 is a schematic bottom view of a magnet mounting plate on which magnets are mounted.
• the magnets 22 are arranged in the form of dots at lattice point positions on the plate surface of the magnet-arranged plate 20, and are attached within a range where the entire plane of the mask 36 can be adsorbed.
• the magnetic force acting on the central portion of the mask 36 is set by considering the size of the magnet 22 and the magnitude of the magnetic force, the arrangement position of the magnet 22, the thickness of the glass substrate 32, the thickness and material of the chuck 18, and the like. It is weaker than the magnetic force acting on the edge of 36.
• a plurality of magnets 22 are planarly arranged at the lattice point positions on the lower surface of the magnet arrangement plate 20, and a strong magnetic force is applied to the peripheral portion of the magnet arrangement plate 20!
• a magnetite 22 is disposed, and a magnet 22 having a weak magnetic force is disposed at the center.
• the magnet 22 can come into contact with the upper surface of the chuck 18 by the vertical movement of the magnet mounting plate 20.
• FIG. 4 is an explanatory diagram of movement restriction means.
• the movement restricting means 24 is provided with an extended portion 24a extending upward from the upper surface of the chuck 18 and a stagger function of the magnet mounting plate 20 provided at the upper end of the extended portion 24a with a step in the horizontal direction. And a limiting portion 24b.
• the magnet arrangement plate 20 is provided with a hole portion 20c through which the extended portion 24a of the movement restricting means 24 can pass and a smaller size than the planar size of the restricting portion 24b.
• the height of the restricting portion 24b that is, the movement restriction amount of the magnet mounting plate 20 can be appropriately set in consideration of the magnetic force of the magnet 22 acting on the mask 36, the moving time of the magnet mounting plate 20, and the like. Good. For example, it may be set within a range where the magnetizing action by the magnet 22 is set to a minimum distance that does not reach the mask 36 at a position where the rise of the magnet mounting plate 20 is stopped by the restricting portion 24b. As long as the attractive force is weakened, it is sufficient.
• the substrate clamp 26 extends downward from the upper portion of the apparatus main body 30, and the tip end portion 26a is It is a saddle type that is bent toward the back 18 side (the center side of the apparatus main body 30), and a plurality of pieces are arranged along the side edge of the chuck 18.
• the substrate clamp 26 is set so that the tip portions 26a have the same height (in the same plane) in order to support the edge portion of the glass substrate 32 with the tip portions 26a (folded portions). Further, the substrate clamp 26 can be moved up and down by an elevating mechanism (not shown) provided on the outer upper portion of the apparatus body 30 while maintaining the state in which the tip portions 26a are in the same plane. As the substrate clamp 26 is raised, the back surface of the glass substrate 32 can be brought into contact with the chuck 18 to be mounted and held in a flat shape.
• the mask clamp 28 extends downward from the upper part of the apparatus main body 30, and has a hook-like shape in which the tip 28a is bent toward the chuck 18 side (the central side of the apparatus main body 30). And a plurality of them are arranged along the side edge of the substrate clamp 26.
• the mask clamp 28 is set so that the tip portions 28a have the same height (in the same plane) in order to support the edge portion of the mask 36 by the tip portions 28a (folded portions). Further, the mask clamp 28 can be lifted and lowered by an elevating mechanism (not shown) provided on the outer upper portion of the apparatus body 30 while maintaining the state in which the tip portions 28a are in the same plane.
• the mask 36 can be moved in a direction approaching and moving away from the surface of the glass substrate 32.
• the mask 36 includes a mask film 36a in which a plurality of opening patterns corresponding to each pixel of the organic EL element are provided, and a frame-type mask frame 36b that holds the peripheral portion of the mask film 36a.
• the substrate clamp 26 and the mask clamp 28 can be rotated together with the chuck 18 and the magnet arrangement plate 20 by a rotating mechanism (not shown) provided on the upper outer portion of the vacuum deposition apparatus 10. RU
• the glass substrate 32 is placed inside the apparatus main body 30 by the substrate transfer mechanism and inserted between the chuck 18 and the mask 36. Then, the glass substrate 32 is moved downward along with the lowering operation of the substrate transport mechanism and placed on the substrate clamp 26. Thereafter, the mask 36 is moved upward by raising the mask clamp 28, and the mask 36 and the glass substrate 32 are brought into a bonded state. The mask clamp 28 continues to be raised until the glass substrate 32 contacts the bottom surface (chuck surface) of the chuck 18. When the glass substrate 32 is placed on the mask 36, the glass substrate 32 becomes horizontal along the mask 36, and is brought into contact with the chuck 18 while maintaining this horizontal state.
• the substrate clamp 26 is raised until it contacts the glass substrate 32.
• the glass substrate 32 is mounted and held on the chuck 18 while maintaining the horizontal state by the substrate clamp 26.
• the mask clamp 28 is lowered, and the mask 36 is moved downward.
• FIG. 5 is an explanatory diagram of alignment between the glass substrate and the mask.
• FIG. 5A is a diagram for explaining the arrangement of the camera, the glass substrate, and the mask.
• FIG. 5 (B) is an image taken by a camera and shows a case where a positional deviation has occurred.
• Fig. 5 (C) is an image taken by a camera and shows a case where the positions are correct.
• the glass substrate 32 is provided with alignment marks 40 in at least two places.
• the alignment mark 40 provided on the glass substrate 32 is provided at, for example, the corners of the glass substrate 32 opposite to each other, and at the same time the electrode film of the organic EL element is formed on the glass substrate 32, the same material as this electrode is used. It may be formed.
• the shape of the alignment mark 40 provided on the glass substrate 32 may be, for example, a circle, a dot, or a cross.
• the alignment mark 42 provided on the mask 36 may be a dot, circle, cross, or the like as long as it is provided at a position corresponding to the alignment mark 40 provided on the glass substrate 32. I just need it. If the alignment mark 40 on the glass substrate 32 is rounded, the alignment mark 42 on the mask 36 should be pointed. If the alignment mark 40 on the glass substrate 32 is pointed, the alignment on the mask 36 Mark 42 should be rounded!
• the vacuum deposition apparatus 10 may be provided with a camera 44 that images the alignment mark 40 provided on the glass substrate 32 and the alignment mark 42 provided on the mask 36 (FIG. 5). (See (A)). While confirming the image captured by the camera 44, the dot of the alignment mark 42 (40) is placed in the circle of the alignment mark 40 (42).
• FIG. 6 is an explanatory view when the mask 36 is bonded to the glass substrate 32.
• the mask clamp 28 is moved upward until the mask 36 contacts the glass substrate 32.
• the mask 36 is put on the glass substrate 32.
• the magnet arrangement plate 20 is moved downward to bring the magnet 22 into contact with the upper surface of the chuck 18.
• the magnetic force of the magnet 22 acts on the mask 36, and the mask 36 is fixedly held.
• the glass substrate 32, the mask 36, etc. are rotated, and the organic material 12 is heated and evaporated by the heater 14b to form a predetermined pattern on the glass substrate 32. To do. As a result, an organic EL element is manufactured.
• the mask 36 is in contact with the lower surface of the chuck 18 through the glass substrate 32, and the magnet arrangement plate 20 (magnet 22) is in contact with the upper surface of the chuck 18, as in the embodiment shown in FIG. is doing.
• the magnet arrangement plate 20 is moved upward.
• the mask clamp 28 is lowered, and the mask 36 is moved downward.
• the substrate clamp 26 is lowered and the glass substrate 32 is moved downward.
• the substrate transport mechanism is inserted into the apparatus main body 30, and the glass substrate 32 is recovered.
• the magnet arrangement plate 20 (magnet 22) is clamped by providing the expansion / contraction means 34 on the outer upper part of the apparatus body 30. Since the magnet can be moved in the direction approaching and moving away from the upper surface of the rack 18, the magnet 22 is lowered during deposition to hold the mask 36 fixed by magnetic force, and the magnet 22 is raised during non-deposition to affect the influence of the magnetic force.
• the mask 36 can be prevented from being given. That is, the mask 36 can be detached without applying a load to the mask film 36a, and the mask film 36a does not stretch even if the desorption is performed a plurality of times. Accordingly, since the opening pattern of the mask 36 is not deformed, an accurate organic EL element pattern can be formed on the glass substrate 32.
• the movement amount of the magnet arrangement plate 20 can be limited to a predetermined range. That is, the lower limit of the moving amount is a position where the magnet 22 and the chuck 18 are in contact with each other, and the upper limit of the moving amount is that the magnetic force of the magnet 22 is a mass. It is a position that does not affect the position 36. Therefore, since the moving amount of the magnet mounting plate 20 can be minimized, the manufacturing time can be shortened and the production amount of the organic EL element can be improved.
• the height of the restricting portion 24b of the movement restricting means 24 can be arbitrarily set, the amount of movement of the magnet arrangement plate 20 can be adjusted, and the magnetic force acting on the mask 36 can be freely adjusted. Can do.
• the glass substrate 32 Before the glass substrate 32 is placed on the chuck surface, the glass substrate 32 is once mounted on the mask 36 below the glass substrate 32 and is directly clamped to the chuck surface together with the mask 36. It is possible to eliminate itching. In other words, even if a thin glass substrate 32 is used, the glass substrate 32 is maintained in a horizontal state and is held by the chuck 18 so that the central portion of the glass substrate 32 is prevented from squeezing downward due to its own weight or gravity. it can.
• the magnet 22 has the size and arrangement pattern of the magnet 22 in the central portion of the magnet arrangement plate 20, and the size and arrangement of the magnet 22 in the peripheral portion.
• the force is a configuration in which the magnetic force acting on the central portion of the mask 36 is weaker than that of the peripheral portion by changing the pattern, and is not limited to this form. That is, for example, by making all the magnets 22 the same size and changing the arrangement pattern of the magnets 22, the magnetic force acting on the central portion of the mask 36 can be made weaker than that of the peripheral portion. Further, by making the arrangement pattern of the magnets 22 the same and changing the size of the magnets 22, the magnetic force acting on the central part of the mask 36 can be made weaker than that of the peripheral part.
• the alignment marks 40, 42 used for alignment between the mask 36 and the glass substrate 32 are limited to the force described as dots or circles as shown in FIG. None happen. That is, the alignment marks 40 and 42 may have a circle or a cross.
• the camera 44 used for alignment between the mask 36 and the glass substrate 32 is not limited to this form as shown in FIG. Absent. That is, three or more cameras 44 may be provided. In this case, the alignment marks 40 and 42 may be provided at the corners of the glass substrate 32 and the mask 36.
• the present invention is not limited to this form, and other film forming apparatuses such as a sputtering apparatus and a vapor phase growth apparatus may be used.
• the substrate may be a substrate having a material force other than glass, not limited to the glass substrate 32! /.

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• 2005
  • 2005-03-24 JP JP2005086687A patent/JP4609759B2/ja not_active Expired - Fee Related
• 2006
  • 2006-02-22 KR KR1020077016158A patent/KR100925362B1/ko not_active Expired - Fee Related
  • 2006-02-22 TW TW095105911A patent/TW200637930A/zh not_active IP Right Cessation
  • 2006-02-22 CN CN201410065916.5A patent/CN103820755A/zh active Pending
  • 2006-02-22 CN CNA2006800015797A patent/CN101090995A/zh active Pending
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