CN103820755A - 成膜装置、成膜方法以及有机电发光元件的制造方法 - Google Patents

成膜装置、成膜方法以及有机电发光元件的制造方法 Download PDF

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Publication number
CN103820755A
CN103820755A CN201410065916.5A CN201410065916A CN103820755A CN 103820755 A CN103820755 A CN 103820755A CN 201410065916 A CN201410065916 A CN 201410065916A CN 103820755 A CN103820755 A CN 103820755A
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Prior art keywords
mask
substrate
magnet
magnetic force
film
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Chinese (zh)
Inventor
片冈达哉
长尾兼次
齐藤谦一
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VIEETECH JAPAN CO Ltd
Mitsui Engineering and Shipbuilding Co Ltd
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VIEETECH JAPAN CO Ltd
Mitsui Engineering and Shipbuilding Co Ltd
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Publication of CN103820755A publication Critical patent/CN103820755A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN201410065916.5A 2005-03-24 2006-02-22 成膜装置、成膜方法以及有机电发光元件的制造方法 Pending CN103820755A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005086687A JP4609759B2 (ja) 2005-03-24 2005-03-24 成膜装置
JP086687/2005 2005-03-24

Related Parent Applications (1)

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CN201410065916.5A Pending CN103820755A (zh) 2005-03-24 2006-02-22 成膜装置、成膜方法以及有机电发光元件的制造方法

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JP (1) JP4609759B2 (enExample)
KR (1) KR100925362B1 (enExample)
CN (2) CN101090995A (enExample)
TW (1) TW200637930A (enExample)
WO (1) WO2006100867A1 (enExample)

Cited By (8)

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CN105568224A (zh) * 2016-01-28 2016-05-11 京东方科技集团股份有限公司 蒸镀用遮挡装置以及蒸镀设备
CN106048536A (zh) * 2016-06-06 2016-10-26 京东方科技集团股份有限公司 一种蒸镀装置及待蒸镀基板加工方法
CN106906441A (zh) * 2015-11-25 2017-06-30 佳能特机株式会社 成膜系统、磁性体部以及膜的制造方法
CN109837504A (zh) * 2017-11-29 2019-06-04 佳能特机株式会社 成膜装置、成膜方法、以及电子设备制造方法
CN110527972A (zh) * 2016-05-18 2019-12-03 应用材料公司 用于运输沉积源的设备和方法
CN111155054A (zh) * 2018-11-07 2020-05-15 佳能特机株式会社 成膜装置、制造系统、有机el面板的制造系统
CN112176281A (zh) * 2019-07-05 2021-01-05 佳能特机株式会社 掩模保持机构、蒸镀装置以及电子器件的制造装置
CN116083856A (zh) * 2023-01-07 2023-05-09 唐山斯腾光电科技有限公司 一种红外窗片加工用蒸发镀膜装置

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JPWO2009084623A1 (ja) * 2007-12-27 2011-05-19 キヤノンアネルバ株式会社 処理装置、並びに電子放出素子及び有機ｅｌディスプレイの生産方法
KR101107181B1 (ko) * 2010-01-04 2012-01-25 삼성모바일디스플레이주식회사 마스크 흡착용 자석 조립체
KR101084185B1 (ko) 2010-01-12 2011-11-17 삼성모바일디스플레이주식회사 패턴 형성 방법 및 유기 발광 소자의 제조방법
TWI475736B (zh) * 2011-07-26 2015-03-01 Innolux Corp 電激發光顯示裝置的製作方法以及鍍膜機台
KR101203171B1 (ko) 2012-05-22 2012-11-21 주식회사 아이.엠.텍 글래스 기판 합착을 위한 얼라인 장치
KR101951029B1 (ko) * 2012-06-13 2019-04-26 삼성디스플레이 주식회사 증착용 마스크 및 이를 이용한 유기 발광 표시장치의 제조방법
KR102000718B1 (ko) * 2012-11-15 2019-07-19 삼성디스플레이 주식회사 박막 증착용 마스크 조립체 및 이의 제조 방법
KR102081282B1 (ko) * 2013-05-27 2020-02-26 삼성디스플레이 주식회사 증착용 기판이동부, 이를 포함하는 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치
KR102270080B1 (ko) * 2013-10-30 2021-06-29 삼성디스플레이 주식회사 박막 증착 장치
KR102273050B1 (ko) 2014-09-17 2021-07-06 삼성디스플레이 주식회사 증착용 마스크 어셈블를 포함하는 증착 장치 및 증착 방법
KR102250047B1 (ko) 2014-10-31 2021-05-11 삼성디스플레이 주식회사 마스크 프레임 조립체, 그 제조 방법 및 유기 발광 표시 장치의 제조 방법
KR102280269B1 (ko) 2014-11-05 2021-07-22 삼성디스플레이 주식회사 마스크 프레임 조립체 및 그 제조 방법
KR102025002B1 (ko) * 2015-04-17 2019-09-24 다이니폰 인사츠 가부시키가이샤 증착 패턴의 형성 방법, 누름판 일체형의 압입 부재, 증착 장치 및 유기 반도체 소자의 제조 방법
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JP6662102B2 (ja) * 2016-02-29 2020-03-11 富士ゼロックス株式会社 光学装置の製造方法、基板装置、光学装置及び光学装置の製造装置
JP6309048B2 (ja) * 2016-07-01 2018-04-11 キヤノントッキ株式会社 マスク吸着装置
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KR102732022B1 (ko) * 2021-12-30 2024-11-19 주식회사 선익시스템 인라인 증착 시스템
KR102794853B1 (ko) * 2021-12-30 2025-04-16 주식회사 선익시스템 인라인 증착 시스템 및 인라인 증착 시스템의 기판 얼라인 방법

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