WO2006100765A1 - Procede de fabrication d’un dispositif semi-conducteur et dispositif de moulage par compression - Google Patents

Procede de fabrication d’un dispositif semi-conducteur et dispositif de moulage par compression Download PDF

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Publication number
WO2006100765A1
WO2006100765A1 PCT/JP2005/005243 JP2005005243W WO2006100765A1 WO 2006100765 A1 WO2006100765 A1 WO 2006100765A1 JP 2005005243 W JP2005005243 W JP 2005005243W WO 2006100765 A1 WO2006100765 A1 WO 2006100765A1
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WO
WIPO (PCT)
Prior art keywords
cavity
resin
substrate
flow
mold
Prior art date
Application number
PCT/JP2005/005243
Other languages
English (en)
Japanese (ja)
Inventor
Bunshi Kuratomi
Takafumi Nishita
Fukumi Shimizu
Original Assignee
Renesas Technology Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp. filed Critical Renesas Technology Corp.
Priority to PCT/JP2005/005243 priority Critical patent/WO2006100765A1/fr
Priority to JP2007509118A priority patent/JPWO2006100765A1/ja
Priority to TW094139159A priority patent/TW200639982A/zh
Publication of WO2006100765A1 publication Critical patent/WO2006100765A1/fr

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48228Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
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Definitions

  • the present invention relates to a semiconductor device manufacturing method and a compression molding apparatus, and particularly covers an electronic component such as a semiconductor chip mounted on one surface of a substrate with a sealing body made of an insulating resin in the manufacture of the semiconductor device.
  • the present invention relates to a technology effective when applied to a sealing technology.
  • a transfer molding apparatus is known as an apparatus for covering a semiconductor chip or the like with a sealing body made of an insulating resin.
  • the transfer molding device has a structure in which a resin material called a tablet is placed in a pot (cylinder) located on the cull, and then the plunger is lowered to heat and press the resin material on the cull to melt it. Get ready! The molten resin (resin) passes through the runner and gate and is pressed into the cavity, and a sealed body is formed by the resin cured in the cavity.
  • the resin is hardened in the flow path through which the runner-first resin flows, and the resin is discarded without being used in order to move the resin in the kull force. For this reason, the use efficiency of sallow is low.
  • the wire connected to the electrodes of the semiconductor chip may be deformed by the flow of the resin and cause a short circuit failure. As semiconductor devices become smaller and thinner, wires tend to be thinner and short-circuit defects are more likely to occur.
  • Non-Patent Document 1 compression molding apparatuses have been used (for example, Non-Patent Document 1).
  • the compression molding apparatus has a mold structure that does not have pots and runners, and what constitutes a cavity is a substrate, a cavity bottom, and a frame.
  • the frame portion is a clamp surface in contact with the substrate, and is also a side surface of the cavity.
  • the supply of grease in the compression molding machine is based on the recognition of the number of chips on the substrate by image recognition, the weight of the grease is calculated based on the data, the powdered grease is metered, and the tablet is compressed. ing. Then, use this compressed tablet to compress and mold! / Speak.
  • Non-Patent Document 1 “Electronic Materials” published by Industrial Research Council, August 2004, 66-69. Disclosure of the invention
  • a transfer molding method using an epoxy resin whose molding resin is inexpensive is the mainstream.
  • the transfer molding device has a resin flow path such as cal, runner, gate, etc., so the use efficiency of resin is 30-50%, which hinders manufacturing cost reduction. .
  • the compression molding apparatus dramatically improves the efficiency of resin use by eliminating cals, runners, and gates.
  • the number of chips (semiconductor chips) mounted on the substrate is ascertained. It is necessary to calculate and weigh the weight and put it into the cavity.
  • FIG. 28 is a flow chart showing each step of supplying a resin for compression molding studied prior to the present invention.
  • the resin supply check the number of chips on the board (recognized by image) S50, transfer the number of chips mounted to the resin weighing section S51, calculate the amount of resin to be loaded into the resin weighing data processing and capacity S52, load at the resin weighing section Measurement and measurement of the amount of resin to be measured (measurement error accuracy at weighing 50 mmg required) S53, transfer to the resin supply section after weighing S54, resin supply to compression mold S55, sealing body formation S56 .
  • the number of semiconductor chips mounted on the substrate is image-recognized with a monitor camera.
  • the number of chips mounted (information) by this image recognition is transferred to the resin measuring unit (S51). cash register The weighing unit performs resin weighing data processing based on the information (data) of the number of chips mounted, and calculates the amount of resin to be put into the lower mold cavity of the compression mold (S52). Next, measurement and measurement of the amount of resin charged in the resin measuring section are performed (S53). The measurement error accuracy during this measurement is in units of 50 mmg. After weighing the resin, the weighed resin is transferred to the resin supply section (S54). The resin supply unit supplies the measured resin to the compression mold (S55). Thereafter, the lower mold and the upper mold are overlaid (clamping), and then molding is performed to form a sealing body (S56).
  • a compression molding apparatus that performs such a process requires an image unit such as a high-precision motor camera and an image processing device for grasping the number of chips, and leads to resin weighing from grasping the number of chips.
  • Computational software is required, and incidental devices become expensive, which increases the manufacturing cost of semiconductor devices.
  • One object of the present invention is to provide a method of manufacturing a semiconductor device that can reduce the manufacturing cost of the semiconductor device.
  • One object of the present invention is to provide a compression molding apparatus that can reduce the manufacturing cost of a semiconductor device.
  • One object of the present invention is to provide a method for manufacturing a semiconductor device in which the thickness of a sealing body can be formed without excess or deficiency.
  • One object of the present invention is to provide a compression molding apparatus that can form the thickness of a sealing body without excess or deficiency.
  • a method for manufacturing a semiconductor device of the present invention includes:
  • step (f) a step of releasing the substrate after the step (e) from the molding die, wherein the lower die is a cavity corresponding to the sealing body formed on the substrate, and the cavity A holding mechanism for holding the substrate; the flow cavity located outside; a plurality of flow gates communicating the cavity with the flow cavity; and a plurality of air vents communicating with the cavity. And a flow cavity plunger that is controlled to enter into the flow cavity of the lower mold,
  • the flow cavity plunger is inserted into the lower mold flow cavity to apply the resin flowing into the flow cavity to a predetermined pressure. It is characterized by pressing.
  • the pressure of the resin that has flowed into the flow cavity by causing the flow cavity plunger to enter the flow cavity of the lower mold is set to the same pressure as the pressure of the resin in the cavity. Pressurize.
  • the amount of the resin supplied into the cavity in the step (d) is such that the lower mold and the upper mold are in the clamped state, and no electronic component is mounted. And 120 to 150% of the space volume into which the resin formed by the cavity of the lower mold is injected, and in the case of the same type of substrate, the amount of the grease input is the same each time. .
  • An upper mold having a holding mechanism for holding the substrate on the lower surface
  • a lower mold that is located below the upper mold and has a cavity having a depression force on the upper surface, and after holding the substrate on the upper mold and supplying grease to the cavity, the lower mold A compression molding apparatus for forming a sealing body made of the resin on the lower surface side of the substrate by heating and pressurizing the resin with a mold and an upper mold clamp,
  • the lower mold includes a flow cavity having a depression force located outside the cavity, a plurality of flow gates having a groove force for communicating the cavity and the flow cavity, and an air vent having a groove force connected to the cavity.
  • a flow cavity having a depression force located outside the cavity
  • a plurality of flow gates having a groove force for communicating the cavity and the flow cavity
  • an air vent having a groove force connected to the cavity.
  • the upper mold is provided with a flow cavity plunger that is controlled to enter into the flow cavity of the lower mold when the lower mold and the upper mold are clamped.
  • the pressure of the resin flowing into the flow cavity by causing the flow cavity plunger to enter the flow cavity of the lower mold is used as the pressure of the lower mold and the upper mold.
  • the pressure is the same as the pressure of the resin in the cavity when the mold is clamped.
  • the sealed body can be formed homogeneously and does not contain bubbles (voids) inside. Improve. In order to prevent the generation of voids, it is necessary to harden the grease in the cavity under a pressure of 50 kgZcm 2 or more.
  • the sealing body is formed by a compression molding apparatus. Therefore, when the sealing body is formed, a strong resin flow does not occur as in transfer molding, and deformation due to the flow of the wire connecting the electrode of the semiconductor chip and the wiring of the substrate does not occur. As a result, the manufacturing yield is improved.
  • the diameter of the wire used at present is about 25 m. It can be assumed that the wire diameter will become thinner in the future due to further narrowing of the electrode pad pitch on the semiconductor chip. For example, if the wire diameter is about 23 m, the electrode pad pitch can be reduced to about 65 m. In addition, the wire diameter is considered to advance further to 20 / ⁇ ⁇ , 17 ⁇ m, 15 m. Even with such thin wires, short-circuit defects caused by wire flow can be prevented by compression molding.
  • the amount of resin commensurate with the state in which the electronic component is not mounted on the substrate that does not need to count the number of electronic components such as semiconductor chips mounted on the substrate is determined as the input resin amount. Therefore, the auxiliary device can be simplified and the cost of the compression molding device can be reduced. As a result, the manufacturing cost of the semiconductor device can be reduced.
  • the compression molding apparatus of the present invention since the excess resin flows into the flow cavity during compression molding, the input resin amount is set so that the resin always flows into the flow cavity. Since it is set, it is possible to form a sealing body with an amount that is not excessive or insufficient, and a sealing body with an appropriate thickness can always be formed.
  • FIG. 1 is a flowchart showing a method for manufacturing a semiconductor device according to Example 1 of the present invention.
  • FIG. 2 is a plan view of a wiring motherboard used in the method for manufacturing a semiconductor device according to the first embodiment.
  • FIG. 3 is a front view of the wiring motherboard.
  • FIG. 4 is an enlarged cross-sectional view showing a single product forming portion of the wiring motherboard.
  • FIG. 5 is a plan view of the wiring motherboard on which a semiconductor chip is fixed and wire-bonded.
  • FIG. 6 is a front view of the wiring motherboard shown in FIG.
  • FIG. 7 is a plan view of the wiring motherboard on which the semiconductor chip is not partially fixed.
  • FIG. 8 is a front view of the wiring motherboard shown in FIG.
  • FIG. 9 is a plan view showing the layout of each part of the compression molding apparatus used in the method for manufacturing a semiconductor device of Example 1.
  • ⁇ 10] A schematic cross-sectional view showing the structure of the compression molding apparatus.
  • FIG. 11 is a schematic plan view showing a lower mold of the compression molding apparatus.
  • FIG. 13 is a schematic cross-sectional view showing a state before mold clamping in which a wiring mother board is attached to the upper mold of the compression molding apparatus.
  • FIG. 14 is a schematic cross-sectional view showing a state before the mold is clamped in which the resin is supplied to the lower mold of the compression molding apparatus.
  • FIG. 15 is a schematic cross-sectional view showing a state where the lower mold and the upper mold of the compression molding apparatus are clamped.
  • FIG. 16 is a schematic cross-sectional view showing a state in which the flow cavity provided in the lower mold of the compression molding apparatus is pressurized with a flow cavity plunger.
  • FIG. 18 is a perspective view showing the wiring mother board on which a sealing body is formed.
  • FIG. 19 is a plan view of the wiring motherboard on which a sealing body is formed.
  • FIG. 21 is a schematic view showing a state in which a protruding electrode is formed on the wiring mother board in the method of manufacturing a semiconductor device according to the first embodiment.
  • FIG. 22 is a schematic view showing the wiring motherboard on which protruding electrodes are formed.
  • FIG. 23 is a schematic view showing a state in which the wiring mother board is cut together with the resin layer with a dicing blade in the method of manufacturing a semiconductor device according to the first embodiment.
  • FIG. 24 A perspective view showing a semiconductor device manufactured by the method of manufacturing a semiconductor device of Example 1.
  • FIG. 25 is a schematic cross-sectional view of a part of the semiconductor device manufactured by the semiconductor device manufacturing method of Example 1.
  • FIG. 26 is a plan view showing a lower mold of the compression molding apparatus of Example 2.
  • FIG. 27 is a schematic view showing the mating surface of the upper mold of the compression molding apparatus of Example 2.
  • FIG. 28 is a flow chart showing each step when supplying the resin to the compression mold studied prior to the present invention.
  • Carrying transport 26 ⁇ Compression molding die, 27 ⁇ Unloading / conveying portion, ⁇ 28 Flow flow break portion, ⁇ 29 ⁇ Board unloader, ⁇ 35 ⁇ Lower die, ⁇ Guide hole, 39 ⁇ Separator, 40 ⁇ Lower cavity stopper, 41 ⁇ Bitty, 46 ⁇ Flange, 47 ⁇ Fixed block, 48 ⁇ Guide space, 49 ⁇ Stuno, 50 ⁇ Lower plate, 51 ⁇ Groove, 52 ⁇ 0—Ring 53... Flow cavity, 54 ⁇ Flow gate, 55 ⁇ Air vent, 56, 57 ⁇ Wedge, 60... Upper die, 62 ⁇ Substrate suction block, 65 ... Vacuum suction hole, 66 ...
  • Vacuum suction piping 67 ... Flow cavity plunger, 68 ... Pressure actuator, 69 ... Drive shaft, 70 ... Support blade, 71, 72 ⁇ TUNOLE, 87 ⁇ Tamp, 88 ⁇ Noop, 89 ⁇ Tape, 90 ⁇ Dicing Blade, 95, 96 ⁇ Wedge.
  • the present invention is applied to a manufacturing method of a MAP (Mold Array Package) type semiconductor device that collectively seals a plurality of semiconductor chips mounted on a wiring board. This case will be described with reference to FIG.
  • a wiring mother board (also referred to as a board) 1 shown in FIGS. 2 to 4 is prepared (S01).
  • 2 is an overall plan view of the component mounting surface of the wiring mother board 1
  • FIG. 3 is a front view of the wiring mother board 1 of FIG. 1
  • FIG. 4 is an enlarged cross-sectional view of a single product forming portion on the wiring mother board 1. .
  • the wiring mother board 1 is a mother body of a wiring board of a semiconductor device to be described later, and has an appearance that is, for example, a flat rectangular thin plate.
  • the wiring motherboard 1 has a main surface (first surface) la and a back surface (second surface) lb on the opposite side.
  • the main surface la of the wiring mother board 1 is a component mounting surface on which a semiconductor chip (hereinafter also referred to as a chip) is mounted as described later, and the back surface of the wiring mother board 1 is a bump electrode (projection electrode) as described later. ) Is a bump electrode formation surface.
  • a product forming portion 2 is disposed on the wiring mother board 1.
  • the product forming section 2 is a quadrangular portion surrounded by a dotted line in FIG.
  • Each product forming section 2 is a unit region having a wiring board configuration necessary for constituting one semiconductor device.
  • a plurality of guide holes 3 penetrating the main back surface of the wiring mother board 1 are formed on both sides of the wiring mother board 1. The guide hole 3 is used as a guide when the wiring mother board 1 is transported or positioned.
  • the wiring mother board 1 has a multilayer wiring structure.
  • Figure 4 shows an example of a four-layer wiring configuration.
  • the upper surface (main surface la) of the wiring motherboard 1 indicates the component mounting surface
  • the lower surface (rear surface lb) of the wiring motherboard 1 indicates the bump electrode formation surface.
  • the wiring mother board 1 is attached to the laminated body formed by alternately stacking the insulating base material (core material) 5 and the wiring layer 6, and the upper and lower surfaces (component mounting surface and bump electrode forming surface) of the laminated body.
  • Solder resist 7 is provided.
  • the insulating substrate 5 is made of, for example, a glass with high heat resistance and epoxy resin.
  • the material of the insulating substrate 5 is not limited to this, and can be variously changed.
  • BT resin or aramid nonwoven material may be used. When BT resin is selected as the material for the insulating substrate 5, the heat dissipation can be improved because of the high thermal conductivity.
  • Various conductive patterns 6a-6e are formed on each wiring layer 6 of the wiring mother board 1.
  • Guidance The body patterns 6a-6e are patterned by etching a copper (Cu) foil, for example.
  • Conductor pattern 6a of wiring layer 6 on the component mounting surface is a chip mounting pattern
  • conductor pattern 6b is an electrode pattern to which bonding wires are connected
  • conductor pattern 6e (see Fig. 2) is for sealing described later. This is a pattern for facilitating peeling of the resin.
  • a conductor pattern for signal wiring and power supply wiring is formed on the wiring layer 6 on the component mounting surface. Part of the conductor patterns 6a, 6b, 6e, etc.
  • the conductor pattern 6d (see FIG. 4) of the wiring layer 6 on the bump electrode forming surface is an electrode pattern for bonding bump electrodes.
  • conductor patterns for signal wiring and power supply wiring are also formed on the wiring layer 6 on the bump electrode forming surface. Part of the conductor pattern 6d and the like on the bump electrode formation surface is also exposed from the solder resist 7, and the exposed surface is subjected to, for example, nickel and gold plating.
  • the conductor pattern 6c (see FIG. 4) of the wiring layer 6 in the laminate is a wiring pattern for signals and power supplies.
  • the solder resist 7 is also called a solder mask or stop-off, and prevents solder from coming into contact with a conductor pattern that does not require soldering during soldering. In addition to functioning as a protective film that protects the pattern from molten solder, it prevents solder bridges between conductors, protects against contamination and moisture, prevents damage, protects against environment, prevents migration, and maintains insulation between circuits. It also has a function of preventing a short circuit between the road and other components (chip, printed wiring board, etc.).
  • the solder resist 7 is made of, for example, polyimide resin and is formed in specific regions on the main surface and the back surface of the wiring mother board 1.
  • the wiring mother board 1 having a four-layer wiring structure has been illustrated, but the present invention is not limited to this.
  • the wiring mother board 1 having a two-layer wiring structure having fewer than four layers is used.
  • a lot of wiring mother boards 1 with various wiring layer configurations (various varieties) such as a wiring mother board 1 having a 6-layer wiring structure more than four layers flow in lot units.
  • a chip (semiconductor chip) is used for each product forming portion 2 on the component mounting surface of the wiring mother board 1 by using an adhesive such as a silver-containing paste. Equipped with 9 (S02).
  • the thickness of the chip 9 is not particularly limited, but is, for example, about 100 / zm or less.
  • FIG. 5 is an overall plan view showing the component mounting surface of the wiring mother board 1 after the wire bonding process
  • FIG. 6 is a front view of the wiring mother board 1 of FIG.
  • the case where one chip 9 (electronic component) is mounted on each product forming section 2 is exemplified, but the present invention is not limited to this.
  • each product forming section 2 is mounted with a laminated chip in which a plurality of chips 9 are laminated.
  • passive elements such as chip resistors and chip capacitors may be mounted.
  • FIG. 5 shows a diagram in which chips 9 are mounted on all product forming portions 2 in one wiring mother board 1.
  • a method is adopted in which chip bonding is not performed on the product forming part 2 where the wiring is defective, and the yield is improved. It is illustrated.
  • FIGS. 7 and 8 there is also a wiring mother board 1 that cannot be chip-bonded.
  • an X mark 11 indicating a wiring failure is attached to the defective product formation part.
  • chip 9 is not installed in this part.
  • Figure 8 shows that the chip 9 is mounted and the point is the point of the arrow.
  • a sealing body is formed on the wiring mother board 1 (S04). This sealing body is formed by the compression molding apparatus shown in FIGS.
  • FIG. 9 is a layout diagram showing an example of the compression molding apparatus 20.
  • the compression molding apparatus 20 includes a powder resin weighing unit 21, a powder resin supply unit 22, a substrate loader 23, a substrate alignment unit 24, a carry-in and transfer unit 25, a compression molding die 26, a carry-out and transfer unit 27, a flow cane break unit 28, and a substrate. Unloader 29.
  • the wiring mother board 1 before molding after the wire bonding step is transported to the substrate aligning section 24 of the transporting and transporting section 25 through the substrate loader 23, and after being aligned by the substrate aligning section 24, the transporting and transporting section. It is attached to the lower surface of the upper mold of the compression mold 26 through 25. In addition, wax resin is supplied to the cavity on the upper surface of the lower mold. Thereafter, the upper die and the lower die are clamped (clamped) to form a sealing body on the lower surface side of the wiring mother board 1.
  • the wiring mother board 1 that has undergone the molding process in the compression molding die 26 is carried by the carry-carrying part 27 to the flow-cavity break part 28. In this flow cane break portion 28, unnecessary hardened resinous portions around the sealing body are cut and removed.
  • the wiring mother board 1 having the sealing body from which unnecessary flow-carbide portions are removed is accommodated in the board unloader 29.
  • FIG. 10 to FIG. 12 are diagrams showing the compression mold 26.
  • the compression mold 26 has a force with a lower mold 35 and an upper mold 60 located above the lower mold 35.
  • FIG. 11 is a plan view of a part of the lower mold 35
  • FIG. 12 is a bottom view of a part of the upper mold 60.
  • the lower die 35 is attached to the upper surface of the lower platen of the compression molding apparatus 20, and the upper die 60 is attached to the lower surface of the upper platen of the compression molding apparatus 20.
  • the upper platen descends relative to the lower platen and clamps (clamps)!
  • a separator 39 having a plurality of spring guide holes 38 is overlaid on a pedestal 37 that also has a rectangular flat plate force.
  • the lower mold stopper 40 with the upper and lower parts in a flange shape is inserted.
  • a coiled spring 41 is inserted into the spring guide hole 38.
  • the lower mold taste stocko 40 is inserted inside the spring 41 and the edge of the upper flange is supported by the upper end of the spring 41.
  • the lower end of the lower cavity stopper 40 supported by the spring 41 is in a floating state.
  • a height adjustment plate 42 is arranged on a base 37 below the floating lower cavity tent 40.
  • a substrate pressing block 43 made of a rectangular frame is arranged on the upper surface of the separator 39.
  • the substrate pressing block 43 is structured to be supported by the lower mold taste collar 40 at a plurality of locations.
  • the substrate pressing block 43 having a quadrangular frame force is stably supported by the lower mold stopper 40 at, for example, two locations on two sides facing each other.
  • a square cavity bottom plate 44 is disposed inside the substrate pressing block 43.
  • the cavity bottom plate 44 is fixed on the separator 39.
  • the cavity bottom plate 44 is formed thinner than the substrate holding block 43.
  • the bottom surface of the cavity 45 in which the cavity bottom plate 44 is depressed is formed, and the inner peripheral surface of the substrate pressing block 43 forms the peripheral surface of the cavity 45. Since the region where the product forming part 2 of the wiring mother board 1 is provided is rectangular, the cavity 45 is also rectangular.
  • a fixed block 47 is disposed outside the substrate pressing block 43.
  • This fixed block 47 is fixed to the separator 39.
  • the substrate holding block 43 is supported by the lower mold stopper 40 that is biased upward by the spring 41, it can be slid up and down with respect to the fixed block 47 to some extent.
  • the flange 46 is provided at the lower outer periphery of the substrate pressing block 43. This flange 46 portion can move up and down in the guide space 48 formed in the fixed block 47. Then, the upward movement of the guide space 48 is stopped by a stopper 49 provided extending from the fixed block 47! /.
  • a rectangular frame-shaped lower mold plate 50 is fixed to the upper surface of the fixed block 47.
  • a substrate pressing block 43 is fitted to the inner peripheral side of the lower mold plate 50.
  • the substrate holding block 43 has an inner peripheral surface that slides against the outer peripheral surface of the cavity bottom plate 44. The outer peripheral surface slides relative to the inner peripheral surface of the lower mold plate 50 and moves up and down.
  • the upper surface of the lower mold plate 50 is in contact with the lower surface of the upper mold.
  • a rectangular frame-shaped groove 51 is provided, and an O-ring 52 is inserted (see FIG. 11).
  • the O-ring 52 is crushed by the lower mold and the upper mold to close the space, so that the area inside the O-ring 52 is maintained airtight.
  • the substrate pressing block 43 has a rectangular frame (rectangular frame) structure, and a flow cavity 53 is provided on each of the pair of long sides.
  • the mating surface of the upper surface of the substrate pressing block 43 comes into contact with the upper die.
  • the spring 41 of the board pressing block 43 is squeezed by the pressure at the time of clamping (clamping), the lower mold tail collar 40 moves downward, and the lower end is lowered with the lower end in contact with the height adjustment plate 42. Stop. In this state, the O-ring 52 is crushed by a predetermined thickness by the upper mold and the lower mold.
  • the flow cavity 53 is provided on the mating surface of the upper surface of the substrate pressing block 43 along the long side.
  • the flow cavity 53 is formed of a depression (groove).
  • the cavity 45 and the flow cavity 53 are connected by a flow gate 54 arranged at a predetermined pitch.
  • the flow gate 54 is a shallower groove than the cavity 45 and the flow cavity 53, and as shown in FIG. 10, the flow gate 54 is shallow on the cavity 45 side and has a deep gate structure on the flow cavity 53 side. This has the effect of pressurizing the resin in the cavity.
  • an air vent 55 that is shallow with a predetermined pitch and also has a groove (dent) force is provided on the mating surface on the short side of the substrate pressing block 43.
  • the air vent 55 is formed in the inner peripheral portion of the substrate holding block 43 and is in communication with the cavity 45. This has an effect of discharging the air remaining in the cavity to the outside of the cavity.
  • a wedge 56 made of a circular protrusion and a wedge 57 also having a rectangular protrusion force are provided on the upper surface of the lower mold plate 50, that is, the mating surface.
  • an upper mold plate 63 made of a square frame is fixed to the lower surface of the base 62.
  • a substrate suction block 64 is fitted inside the upper mold plate 63.
  • the wiring mother board 1 is held by vacuum suction on the lower surface of the board suction block 64. .
  • the substrate suction block 64 is provided with a vacuum suction hole 65 in a row along the vicinity of both sides thereof.
  • These vacuum suction holes 65 are connected to a vacuum suction pipe 66 shown in FIG.
  • the vacuum suction pipe 66 is connected to a vacuum suction mechanism (not shown).
  • a holding mechanism is formed by the vacuum suction mechanism, the vacuum suction pipe 66 and the vacuum suction hole 65.
  • the wiring mother board 1 can be held on the lower surface of the upper mold 60 by this holding mechanism.
  • a flow cavity plunger 67 that is controlled to enter into the flow cavity 53 of the lower mold 35 is disposed on the upper mold plate 63 portion on both sides of the substrate suction block 64. These two flow cavity plungers 67 are structured to face the flow cavity 53 of the lower mold 35.
  • the flow cavity plunger 67 is fixed to the tip of the drive shaft 69 of the pressure actuator 68. Therefore, when the pressurizing actuator 68 is turned on, the flow cavity plunger 67 is advanced downward, and in the clamped state of the lower mold and the upper mold, the flow cavity plunger 67 enters the tip of the flow cavity 53 of the lower mold. Further, the pressure actuator 68 is lifted by the turning-off operation of the pressurizing actuator 68, and as shown in FIG. 10, the tip is stopped at substantially the same position as the lower surface of the upper mold plate 63. Further, a plurality of support villas 70 are fixed as strength members on the upper surface of the base 62.
  • wedges 71, 72 are provided on the lower surface of the upper die plate 63 corresponding to the wedges 56, 57 of the lower die plate 50.
  • the wedge 71 is a circular depression into which the wedge 56 is inserted
  • the wedge 72 is a rectangular depression into which the wedge 57 is inserted.
  • the upper mold plate 63 is provided with a plurality of decompression holes 73.
  • the decompression hole 73 is provided in the upper mold plate 63 along the short side of the substrate suction block 64. These decompression holes 73 are arranged so as to be located in the region inside the O-ring 52 when the lower die and the upper die are clamped.
  • the decompression hole 73 is connected to a pipe 74 shown in FIG. This pipe 74 is connected to a vacuum pump (not shown). Therefore, after the lower mold and the upper mold are clamped, exhaust is performed by turning on the vacuum pump. Therefore, the space portion of the mold that is surrounded by the O-ring 52 and connected to this area is decompressed to a predetermined pressure. Is done.
  • cartridge heaters for heating the lower mold and the upper mold to a predetermined temperature are arranged at predetermined positions on the lower mold 35 and the upper mold 60, respectively.
  • the compression molding apparatus 20 can perform sheet molding by disposing a resin sheet on the lower mold 35.
  • FIG. 13 to FIG. 16 are diagrams schematically showing a compression molding die portion of the compression molding apparatus 20.
  • the wiring mother board 1 is attached to the lower surface of the upper mold 60.
  • This attachment is vacuum suction holding by the holding mechanism described above.
  • the wiring mother board 1 is attached in a state where the main surface la of the wiring mother board 1 is the lower surface and the chip 9 is positioned on the lower surface.
  • the resin sheet 75 is attached to the entire upper surface of the lower mold 35.
  • the cartridge heaters of the lower mold 35 and the upper mold 60 are operated, and the temperatures of the lower mold 35 and the upper mold 60 are set to predetermined temperatures (for example, 170 to 180 ° C.).
  • powder resin (powder resin) 80 is put into the cavity 45 of the lower mold 35.
  • the powder resin 80 is supplied on the resin 45 of the cavity 45.
  • the input amount of the powder resin 80 is formed by the wiring mother board 1 (board) that the lower mold and the upper mold are clamped and no chip 9 is mounted, and the lower mold cavity 45. This is based on the space volume into which the fat is injected, for example, 120-150% of the space volume.
  • the resin is, for example, an epoxy resin.
  • the lower die 35 and the upper die 60 are clamped (clamped).
  • the noda resin 80 becomes a melted resin 80a by heating and pressurization, and is filled in the space formed by the wiring mother board 1 and the cavity 45.
  • a part of the melted resin 80a flows into the flow cavity 53 through the flow gate 54. Since the amount of powder resin 80 injected is an amount that the chip 9 is not mounted at all on the wiring mother board 1, the melted resin 80a surely flows into the flow cavity 53.
  • the pressurizing actuator 68 is turned on, and the flow cavity plunger 67 enters the flow cavity 53 of the lower mold 35 in the mold clamped state as shown in FIG.
  • the resin in the flow cavity 53 is pressurized to a predetermined stress.
  • the pressure of resin in cavity 45 and the pressure of resin in flow cavity 53 are set to the same level.
  • the applied pressure of the resin is, for example, 50 kgZcm 2 or more.
  • FIG. 17 is an operation chart showing the press operation (clamp operation of the lower mold and the upper mold) and the flow cavity plunger operation during compression molding.
  • the vertical axis shows the press operation and the vertical movement of the flow cavity ranger 67, and the horizontal axis shows the time (seconds).
  • the pressing operation is a sudden pressurization operation from 0 seconds to time T1, and then the clamping operation is decelerated from time T1 to time T2. Further, the curing time for curing the resin is from time T2 to time T5. Then, during the time T2 to T6 within the curing time, the pressure treatment to the melted resin 80a in the flow cavity 53 by the flow cavity plunger 67 continues.
  • FIG. 18 is a perspective view showing the wiring mother board 1 on which the encapsulated sealing body 85 from which unnecessary grease parts are removed is formed.
  • FIG. 19 is a plan view thereof. In FIG. 19, the relationship between the sealing body 85 and each product forming part 2 is shown to be divided.
  • FIG. 20 is a flowchart showing each process when supplying the resin to the compression mold described above.
  • the sealing resin formation is performed by the process from step S11 to step S14. That is, in step S11, the amount of the resin to be input by the resin measuring unit is measured and measured. This is done by the powder resin weighing unit 21 shown in FIG. At this time, the number of chips 9 mounted on the wiring mother board 1 is not measured. Therefore, the powder resin weighing unit 21 does not require an image recognition device, and a simple and inexpensive powder resin weighing unit 21 is sufficient. .
  • the measurement error accuracy when weighing the resin amount is in lOOmmg units, and the flowchart in FIG. The accuracy is less than in the case of. This is because the amount of resin input is rough as described above.
  • step S12 After weighing the resin, the weighed resin is transferred to the resin supply unit (powder resin supply unit 22).
  • the resin is supplied to the compression mold by the powder resin supply unit 22.
  • step S14 the sealing body forming force is performed as described above. This corresponds to S11-S14i in Fig. 20 and S53- S56 in Fig. 28. That is, according to the first embodiment, the steps S50 to S52 in FIG. 28 are not necessary, and if the incidental facilities such as the image processing apparatus are reduced, the number of steps can be reduced as well as the number of steps.
  • a bump electrode (projection electrode) is formed on the back surface lb of the wiring mother board 1. That is, as shown in FIG. 21, a plurality of spherical solder bumps 87 held by a bump holding tool 86 are immersed in a flux bath, and after applying a flat to the surface of the solder bump 87, the plurality of solder The bumps 87 are temporarily attached simultaneously to the conductor pattern 6d (refer to FIGS. 4 and 25) on the bump electrode forming surface of the wiring mother board 1 using the adhesive force of the flux.
  • the solder bump 87 also has, for example, a lead (Pb) Z tin (Sn) solder force.
  • solder bump 87 As a material of the solder bump 87, for example, lead-free solder such as tin Z silver (Ag) solder may be used.
  • the solder bumps 87 may be connected together for each product forming part 2, but from the viewpoint of improving the throughput of the solder bump connecting process, the solder bumps 87 of a plurality of product forming parts 2 are connected together. Connection is preferable.
  • the solder bumps 87 are fixed to the conductor pattern 6d by heating and reflowing at a temperature of, for example, about 220 ° C., and bump electrodes (projection electrodes) 88 are formed as shown in FIG. After that, the solder bump connection process is completed by removing the flat residue remaining on the surface of the wiring mother board 1 using a neutral detergent.
  • FIG. 23 is a schematic cross-sectional view of the semiconductor device 15 and corresponds to FIG.
  • the method for manufacturing a semiconductor device using the wiring mother board 1 having a plurality of product forming portions 2 has been described. However, the same applies to the case of a substrate having a single product forming portion.
  • the device can be manufactured.
  • the first embodiment has the following effects.
  • the flow mold 53 is provided in the compression mold to accommodate the melted resin 80a overflowing from the cavity 45.
  • the resin melted resin 80a flowing into the flow cavity 53 is also pressurized by the flow cavity plunger 67 at the same pressure as the melted resin 80a in the cavity 45.
  • the resin in the entire cavity 45 is cured under an appropriate pressure, the thickness of the formed sealing body 85 (sealing body 8) is eliminated, and the thickness dimension varies greatly. It is possible to suppress the occurrence of defects due to the reason. Therefore, it is possible to reduce the manufacturing cost of the semiconductor device with respect to the yield improving ability. Therefore, the manufacturing cost of the semiconductor device can be reduced by improving the yield.
  • the sealed body 85 (sealed body 8) can form a homogeneous material, and bubbles ( No voids are contained, and the moisture resistance of the sealing body 8 is improved.
  • the resin in the cavity 45 needs to be cured under a pressure of 50 kgZcm 2 or more, for example.
  • the sealing body 8 is formed by a compression molding apparatus, a strong resin flow like transfer molding occurs when the sealing body is formed.
  • deformation due to the flow of the filler 10 connecting the electrode of the semiconductor chip 9 and the wiring of the substrate (wiring motherboard 1) does not occur.
  • the current wire diameter is about 25 m. It can be assumed that the wire diameter will become thinner in the future due to further narrowing of the rod. For example, if the diameter of the wire is about 23 ⁇ m, the electrode pad pitch can be reduced to about 65 ⁇ m.
  • the wire diameter is thought to advance further to 20 ⁇ m, 17 ⁇ m, and 15 ⁇ m. Even in such a thin wire, the short circuit failure caused by the wire flow can be prevented by compression molding.
  • the compression molding apparatus of this example matches the state in which the electronic components are not mounted on the substrate that does not need to count the number of electronic components such as the semiconductor chip 9 mounted on the wiring motherboard 1 (substrate). Since the amount of resin is determined as the amount of input resin, the auxiliary device of the compression molding apparatus can be simplified, and the cost of the compression molding apparatus can be reduced. As a result, the manufacturing cost of the semiconductor device can be reduced.
  • FIG. 26 and FIG. 27 are diagrams related to a compression molding die of the compression molding apparatus of the second embodiment.
  • FIG. 26 is a plan view showing the lower mold of the compression mold
  • FIG. 27 is a schematic view showing the mating surface of the upper mold of the compression mold.
  • the compression molding apparatus of the second embodiment is an example in which a plurality of compression molding sections are arranged in the compression molding die of the first embodiment.
  • Example 1 there is one set of compression-molded parts, but in the case of Example 2, as shown in FIGS. 26 and 27, two sets of compression-molded parts are arranged in parallel.
  • one set of compression-molded portions includes a plurality of flow cavities 53, cavities 45 and flow cavities 53 arranged on both sides of the cavities 45 and 45 as shown in FIG.
  • the flow gate 54 is in communication with the air vent 55.
  • the air gate 55 is disposed on both ends of the cavity 45 and the air vent 55 is in communication with the cavity 45.
  • Set up It is The holding mechanism is as described in the first embodiment, and in FIG. 27, the vacuum suction holes 65 constituting the holding mechanism are shown.
  • wedges 95 that also have a protrusion force are arranged at the four corners of the lower plate 50 of the lower die 35, and a wedge 96 that also has a depression force to which the wedge 95 is fitted. As shown in FIG. 27, it is provided on the upper plate 63 of the upper mold 60! /.
  • the method for manufacturing a semiconductor device by compression molding according to the present invention it is possible to form a sealed body having a uniform and good sealing performance, so that a high-quality semiconductor device can be manufactured at low cost. Can be manufactured.

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  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)

Abstract

La présente invention concerne un procédé de fabrication d’un dispositif semi-conducteur, comprenant les étapes de préparation d’un substrat (tableau de connexion), de montage d’une puce sur le substrat, de montage du substrat sur la surface inférieure d'un châssis de dessus de moulage à compression, de jet d'une résine en poudre dans une cavité de la surface supérieure d’un châssis de dessous, et de moulage d’un corps étanche sur la surface inférieure du substrat par fermeture du moule. Le châssis de dessous comprend une cavité correspondant au corps étanche moulé sur le substrat, une cavité d’écoulement positionnée à l’extérieur de la cavité, une pluralité de portes d’écoulement permettant à la cavité de communiquer avec la cavité d’écoulement et une pluralité de tirages d’air disposés de façon continue avec la cavité. Le châssis de dessus comprend un mécanisme de prise tenant le substrat et un plongeur de cavité d'écoulement plongé de façon contrôlée dans la cavité d'écoulement du châssis du dessous. Le procédé est caractérisé en ce que, lorsque le corps étanche est moulé, la force de pressurisation de la résine s’écoulant dans la cavité d’écoulement est portée à la même pression que la force de pressurisation de la résine de la cavité en plongeant le plongeur de cavité d’écoulement dans la cavité d’écoulement avant que le corps étanche soit moulé.
PCT/JP2005/005243 2005-03-23 2005-03-23 Procede de fabrication d’un dispositif semi-conducteur et dispositif de moulage par compression WO2006100765A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2005/005243 WO2006100765A1 (fr) 2005-03-23 2005-03-23 Procede de fabrication d’un dispositif semi-conducteur et dispositif de moulage par compression
JP2007509118A JPWO2006100765A1 (ja) 2005-03-23 2005-03-23 半導体装置の製造方法及び圧縮成形装置
TW094139159A TW200639982A (en) 2005-03-23 2005-11-08 Method of manufacturing semiconductor device and compression molding device

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PCT/JP2005/005243 WO2006100765A1 (fr) 2005-03-23 2005-03-23 Procede de fabrication d’un dispositif semi-conducteur et dispositif de moulage par compression

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JP2013184389A (ja) * 2012-03-08 2013-09-19 Towa Corp 電子部品の樹脂封止成形品の製造方法、圧縮成形用下金型及び樹脂封止装置
KR102146302B1 (ko) * 2012-10-03 2020-08-21 신에쓰 가가꾸 고교 가부시끼가이샤 반도체 장치의 제조 방법 및 반도체 장치
KR20140043878A (ko) * 2012-10-03 2014-04-11 신에쓰 가가꾸 고교 가부시끼가이샤 반도체 장치의 제조 방법 및 반도체 장치
JP2014075443A (ja) * 2012-10-03 2014-04-24 Shin Etsu Chem Co Ltd 半導体装置の製造方法及び半導体装置
JP2014212251A (ja) * 2013-04-19 2014-11-13 Towa株式会社 電子部品の圧縮樹脂封止方法及び圧縮樹脂封止装置
WO2014188824A1 (fr) * 2013-05-23 2014-11-27 日東電工株式会社 Procede de fabrication d'un dispositif a composant electronique
JP2014229768A (ja) * 2013-05-23 2014-12-08 日東電工株式会社 電子部品装置の製造方法
CN105210180A (zh) * 2013-05-23 2015-12-30 日东电工株式会社 电子部件装置的制造方法
JP2015037146A (ja) * 2013-08-15 2015-02-23 信越化学工業株式会社 半導体装置の製造方法及び半導体装置
KR20150020098A (ko) * 2013-08-15 2015-02-25 신에쓰 가가꾸 고교 가부시끼가이샤 반도체 장치의 제조 방법 및 반도체 장치
KR102194156B1 (ko) 2013-08-15 2020-12-22 신에쓰 가가꾸 고교 가부시끼가이샤 반도체 장치의 제조 방법 및 반도체 장치
CN104752238A (zh) * 2013-12-26 2015-07-01 东和株式会社 树脂封装方法及树脂封装装置
CN104752238B (zh) * 2013-12-26 2017-11-24 东和株式会社 树脂封装方法及树脂封装装置
JP2015126125A (ja) * 2013-12-26 2015-07-06 Towa株式会社 半導体封止方法及び半導体封止装置
US20220301901A1 (en) * 2015-12-23 2022-09-22 Besi Netherlands B.V. Press, Actuator Set and Method for Encapsulating Electronic Components with at Least Two Individual Controllable Actuators
US11842909B2 (en) * 2015-12-23 2023-12-12 Besi Netherlands B.V. Press, actuator set and method for encapsulating electronic components with at least two individual controllable actuators
JP2017103468A (ja) * 2017-01-10 2017-06-08 信越化学工業株式会社 半導体装置の製造方法
WO2018138915A1 (fr) * 2017-01-30 2018-08-02 信越エンジニアリング株式会社 Dispositif d'encapsulation par résine et procédé d'encapsulation par résine
JP2018019111A (ja) * 2017-11-02 2018-02-01 Towa株式会社 電子部品パッケージの製造方法

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