WO2006085492A1 - Composant de puce dote d'une fonction de protection electrostatique - Google Patents

Composant de puce dote d'une fonction de protection electrostatique Download PDF

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Publication number
WO2006085492A1
WO2006085492A1 PCT/JP2006/301883 JP2006301883W WO2006085492A1 WO 2006085492 A1 WO2006085492 A1 WO 2006085492A1 JP 2006301883 W JP2006301883 W JP 2006301883W WO 2006085492 A1 WO2006085492 A1 WO 2006085492A1
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WIPO (PCT)
Prior art keywords
electrostatic protection
substrate
resistor
protection element
protection function
Prior art date
Application number
PCT/JP2006/301883
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English (en)
Japanese (ja)
Inventor
Hideaki Tokunaga
Tatsuya Inoue
Original Assignee
Matsushita Electric Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co., Ltd. filed Critical Matsushita Electric Industrial Co., Ltd.
Priority to JP2007502588A priority Critical patent/JPWO2006085492A1/ja
Publication of WO2006085492A1 publication Critical patent/WO2006085492A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/003—Thick film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/06—Electrostatic or electromagnetic shielding arrangements

Definitions

  • Chip parts with electrostatic protection Chip parts with electrostatic protection
  • the present invention relates to a chip component with an electrostatic protection function capable of increasing an electrostatic pulse resistance.
  • circuit elements such as bypass capacitors, resistors, and RC filters that are used for noise countermeasures in signal circuits are also becoming smaller, and along with this, the electrostatic pulse resistance of these circuit elements is decreasing.
  • circuit elements such as bypass capacitors, resistors, and RC filters are protected from static electricity by antistatic components such as varistors.
  • Patent Document 1 As prior art document information relating to the invention of this application, for example, Patent Document 1 are known.
  • a varistor capacitor is connected in parallel to the chip resistor to absorb or bypass static electricity.
  • noise suppression parts such as bypass capacitors and RC filters are increasingly required, so these noise suppression parts must be installed on the same signal line as the above-mentioned static electricity countermeasures.
  • noise countermeasure component and an electrostatic countermeasure component are separately provided on the same signal line, there is a problem that the number of components increases, resulting in an increase in cost and an increase in the size of the device.
  • Patent Document 1 JP-A-8-162303
  • the present invention solves the above-described conventional problems, and an object of the present invention is to provide a chip component with an electrostatic protection function that can increase an electrostatic pulse resistance while suppressing an increase in the number of components. Is.
  • a chip component with an electrostatic protection function is formed in parallel with a substrate, a circuit element formed on the substrate, and the circuit element on the substrate. And a pair of external electrodes formed on both ends of the substrate for connecting the circuit element and the protective element to an external circuit.
  • FIG. 19 is a sectional view showing a modification of FIG.
  • FIG. 20 is a sectional view showing a modification of FIG.
  • FIG. 21 is a sectional view showing a modification of FIG.
  • FIG. 22 is a perspective view showing a modification of FIG.
  • FIG. 23 is a sectional view showing a modification of FIG.
  • FIG. 24 is a perspective view showing a modification of FIG.
  • FIG. 25 is a sectional view showing a modification of FIG. [26] Perspective view of chip component with electrostatic protection function in Embodiment 7 of the present invention
  • Circuit diagram showing circuit A which is an application example of the chip component with the electrostatic protection function ⁇ 47]
  • Circuit diagram showing circuit B which is an application example of the chip component with the electrostatic protection function ⁇ 48]
  • Implementation of the present invention Circuit diagram showing a modified example of chip component with electrostatic protection function in Form 13
  • FIG. 50 is a sectional view showing a modification of FIG.
  • FIG. 51 is a sectional view showing a modification of FIG.
  • FIG. 52 is a sectional view showing a modification of FIG.
  • FIG. 53 is a perspective view showing a modification of FIG.
  • FIG. 54 is a sectional view showing a modification of FIG.
  • FIG. 55 is a perspective view showing a modification of FIG. 41.
  • FIG. 56 is a sectional view showing a modification of FIG.
  • FIG. 57 is a sectional view showing a modification of FIG.
  • FIG. 1 is a perspective view of a chip resistor with an electrostatic protection function according to Embodiment 1 of the present invention
  • FIG. 2 is a cross-sectional view taken along line 2 in FIG. 1
  • FIG. 3 is a chip resistor with an electrostatic protection function shown in FIG. FIG.
  • a substrate 1 is a substrate configured using alumina, for example.
  • first and second resistor take-out electrodes 2 and 3 are provided on one surface of the substrate 1.
  • the resistor 4 is formed by being electrically connected between the first resistor take-out electrode 2 and the second resistor take-out electrode 3.
  • the external electrodes 5 and 6 are a pair of external electrodes formed on both ends of the substrate 1 and electrically connected to the first and second resistor take-out electrodes 2 and 3.
  • the electrostatic protection element 7 is a protection element such as a Pari stacker composed mainly of SiC formed in parallel with the resistor 4 on one surface of the substrate 1, and an overvoltage is applied by, for example, an electrostatic pulse or a surge voltage. Impedance decreases.
  • the electrostatic protection element 7 is electrically connected to the pair of external electrodes 5 and 6 via first and second electrostatic protection element take-out electrodes 8 and 9.
  • the resistor 4 and the electrostatic protection element 7 can be formed in parallel on the same substrate 1, so that an equivalent circuit as shown in FIG. 3 is formed. Is possible.
  • the resistor 4 and the electrostatic protection element 7 can be formed in parallel on the same substrate 1, so that an equivalent circuit as shown in FIG. 3 is formed. Is possible.
  • a resistor paste is prepared by adding a resin component such as cellulose and a solvent component such as butyl carbitol and kneading using a three-roll roll. In the same manner, a resin powder such as ethyl cellulose and a solvent component such as butyl carbitol are added to a mixed powder containing SiC as a main component and an appropriate amount of glass frit, and mixed using a three-roll roller or the like.
  • An electrostatic protection element paste made of varistor paste is prepared by glazing.
  • a mixed powder containing silver as a main component and an appropriate amount of glass frit is added to a powdered component such as ethyl cellulose and a solvent component such as ptylcarbitol and mixed using a three-roll roll. This produces a silver paste.
  • a silver paste is screen-printed on one side of the substrate 1 also having an alumina force, and dried at 50 to 150 ° C for 0.5 to 3 minutes, and then at 500 to 900 ° C for 15 to 180 minutes.
  • the first resistor extraction electrode 2 and the first electrostatic protection element extraction electrode 8 are formed.
  • a resistor paste is screen-printed so as to cover a part of the first resistor extraction electrode 2 and dried at 50 to 150 ° C. for 0.5 to 3 minutes.
  • an electrostatic protection element paste is screen-printed so as to cover a part of the first electrostatic protection element take-out electrode 8 and dried at 50 to 150 ° C. for 0.5 to 3 minutes.
  • a silver paste for forming the second resistor extraction electrode 3 and the second electrostatic protection element extraction electrode 9 is screen printed on the dried resistor paste and the electrostatic protection element paste, respectively. Dry at ⁇ 150 ° C for 0.5-3 minutes.
  • the resistor 4, the electrostatic protection element 7, the second resistor extraction electrode 3, and the second electrostatic protection element extraction electrode 9 are formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes.
  • the thickness of the resistor 4 is preferably formed between 20 and 200 m in order to secure a desired resistance value.
  • the impedance of the electrostatic protection element 7 depends on the thickness, it is desirable that the thickness of the electrostatic protection element 7 is 200 ⁇ m or less in order to exhibit a sufficient electrostatic absorption effect.
  • first resistor take-out electrode 2 and the first electrostatic protection element take-out electrode 8 Apply a paste of silver, glass frit, organic vehicle, etc. to one end of the substrate 1 so that it is electrically bonded to the second part, and the second resistor extraction electrode 3 and the second ESD protection element extraction electrode A paste made of silver, glass frit, organic vehicle or the like is applied to the other end of the substrate 1 so as to be electrically bonded to one end of the substrate 9. Thereafter, heat treatment is performed at 500 to 900 ° C. for 15 to 180 minutes, followed by baking to form a pair of external electrodes 5 and 6, thereby producing a chip resistor with an electrostatic protection function according to Embodiment 1 of the present invention. did.
  • Table 1 shows the electrostatic test results of the conventional chip resistor and the chip resistor with electrostatic protection function according to the first embodiment of the present invention.
  • the electrostatic test conditions were conducted in accordance with international standard IEC61000-4-2 (human body model). As is clear from (Table 1), in the conventional example, after applying 2 kV of static electricity and after applying 4 kV, the resistance value decreased compared to the initial value, and after applying 8 kV of static electricity, 15 kV was applied. Later, the force with which a change in resistance value was observed in which the resistance value greatly decreased compared to the initial value was observed. In Embodiment 1 of the present invention, after 2 kV was applied, 4 kV was applied, and 8 kV was applied. Even after 15 kV was applied, the resistance did not change compared to the initial value.
  • the electrostatic protection element 7 By forming the electrostatic protection element 7 in parallel with the resistor 4 in this way, static electricity can be bypassed by the electrostatic protection element 7. In order to increase the electrostatic binos effect of the electrostatic protection element 7, it is better to lower the impedance of the electrostatic protection element 7, so that the thickness of the electrostatic protection element 7 should be 200 ⁇ m or less. I want it.
  • FIG. 4 is a perspective view of a chip resistor with an electrostatic protection function in Embodiment 2 of the present invention
  • FIG. 5 is a cross-sectional view of the chip resistor with an electrostatic protection function shown in FIG.
  • the substrate 11 is a substrate made of alumina, for example.
  • First and second extraction electrodes 12 and 13 are provided on one surface of the substrate 11.
  • the resistor 14 is formed by being electrically connected between the first extraction electrode 12 and the second extraction electrode 13, and the first extraction electrode 12, the resistor 14, and the second extraction electrode 13 are formed.
  • the extraction electrode 13, the electrostatic protection element 17, and the third extraction electrode 18 are provided by being laminated in this order.
  • a pair of external electrodes 15, 16 are formed at both ends of the substrate 11 and are electrically connected to the first and second extraction electrodes 12, 13, respectively.
  • the electrostatic protection element 17 is an electrostatic protection element such as a Pali stacker made of SiC, which is formed by laminating on the resistor 14, and when an overvoltage is applied due to, for example, an electrostatic pulse or a surge voltage, the impedance is reduced. descend.
  • the electrostatic protection element 17 is electrically connected to the second extraction electrode 13 and is electrically connected to the first extraction electrode 12 via the third extraction electrode 18. [0025] According to the configuration of the second embodiment of the present invention described above, the electrostatic protection element 17 such as a Pari stacker mainly composed of SiC is laminated on the resistor 14, and the electrostatic protection of parentheses is provided.
  • the element 17 is electrically connected to the second extraction electrode 13 and is also electrically connected to the first extraction electrode 12 via the third extraction electrode 18, the resistor 14 and the electrostatic protection element As a result of being connected to 17 in parallel, static electricity can be bypassed by the electrostatic protection element 17, so that the electrostatic pulse resistance of the chip resistor with the electrostatic protection function can be increased.
  • the substrate surface is larger than the case where the electrostatic protection element 17 and the resistor 14 are formed side by side on one surface of the substrate 11.
  • the chip resistor can be reduced in size.
  • the mounting area of the chip resistor with electrostatic protection function can be reduced, and the number of components can be increased as if the electrostatic protection element 17 was provided separately from the chip resistor.
  • the cost can be reduced and the device using the chip resistor with the electrostatic protection function can be downsized.
  • FIG. 6 is a perspective view of the top surface side force of the chip resistor with electrostatic protection function according to the third embodiment of the present invention
  • FIG. 7 is a bottom view of the chip resistor with electrostatic protection function shown in FIG.
  • FIG. 8 is a cross-sectional view of the chip resistor with electrostatic protection function shown in FIG.
  • a substrate 21 is a substrate configured using alumina, for example.
  • first and second extraction electrodes 22 and 23 and a resistor 24 electrically connected to the first and second extraction electrodes 22 and 23.
  • the pair of external electrodes 25 and 26 are formed at both ends of the substrate 21 and are electrically connected to the first and second extraction electrodes 22 and 23, respectively.
  • the protective element 27 is a protective element that is also a Pari stacker mainly composed of SiC formed on the other surface of the substrate 21 so as to face the resistor 24 with the substrate 11 interposed therebetween. When overvoltage is applied, the impedance decreases.
  • the protective element 27 is connected to the external electrode via the third extraction electrode 28. Electrically connected to 25.
  • the third extraction electrode 28 is connected to the fourth extraction electrode 29 via the protective element 27, and the fourth extraction electrode 29 is formed on the side portions formed on both sides of the side portion of the substrate 21, respectively. It is electrically connected to the electrodes 30a and 30b!
  • both ends of the resistor 24 are connected to the external electrodes 25 and 26, respectively, and both ends of the protective element 27 are the external electrode 25 and the side electrodes 30a and 30b.
  • the chip resistor with electrostatic protection function shown in FIG. 6 is attached to a circuit board, for example, a printed wiring board, at least one of the external electrode 26 and the side electrodes 3 Oa and 30b is connected.
  • the resistor 24 and the protective element 27 can be connected in parallel.
  • the static electricity applied to the resistor 24 can be bypassed by the protective element 27, and the electrostatic pulse of the resistor 24 can be bypassed.
  • the tolerance can be increased.
  • the chip resistor with electrostatic protection function shown in FIG. 6 is attached to a circuit board, for example, a printed wiring board, if at least one of the side electrodes 30a and 30b is connected to the ground, it is applied to the resistor 24.
  • the static electricity can be bypassed to the ground by the protective element 27, and the resistance against static electricity of the resistor 24 can be increased.
  • the protective element 27 is formed on the other surface of the substrate 21 having the resistor 24 formed on one surface thereof so as to be substantially opposed to the resistor 24 with the substrate 21 interposed therebetween.
  • the substrate area can be reduced as compared with the case where the protective element 27 and the resistor 24 are formed side by side on one side of the substrate 21.
  • the size of the chip resistor can be reduced.
  • the mounting area of the chip resistor with electrostatic protection function can be reduced, and the number of components does not increase as the protective element 27 is provided separately from the chip resistor.
  • the cost can be reduced and the device using the chip resistor with the electrostatic protection function can be downsized.
  • FIG. 9 is a perspective view of a chip resistor with an electrostatic protection function according to Embodiment 4 of the present invention
  • FIG. 10 is a cross-sectional view of the chip resistor with an electrostatic protection function shown in FIG. 9
  • FIG. 11 is an electrostatic diagram shown in FIG. Fig. 12 shows the electrostatic protection shown in Fig. 9, which is an enlarged schematic diagram between the extraction electrodes of the chip resistor with protection function. It is an equivalent circuit diagram of a chip resistor with a function.
  • a substrate 31 is a substrate configured using alumina, for example.
  • First and second extraction electrodes 32 and 33 are formed on one surface of the substrate 31, and a resistor 34a and SiC are mainly contained between the first and second extraction electrodes 32 and 33.
  • the mixture 34 including the protection element 34b including the NORISTR is electrically connected.
  • the external electrodes 35 and 36 are formed at both ends of the substrate 31.
  • the mixture 34 is connected to the external electrode 35 via the first extraction electrode 32 and is connected to the external electrode 36 via the second extraction electrode 33.
  • the chip resistor with electrostatic protection function has the first extraction electrode 32 and the first extraction electrode 32 as shown in the enlarged schematic diagram of FIG. Between the second extraction electrode 33, a mixture 34 in which resistor particles 34c and protective element particles 34d made of varistor particles mainly composed of SiC are mixed is formed.
  • An equivalent circuit of the mixture 34 sandwiched between the first extraction electrode 32 and the second extraction electrode 33 can be represented by a circuit diagram shown in FIG.
  • Protective element powder is blended at an appropriate blending ratio, and an appropriate amount of glass frit is added to the powder mixture to add a resin component such as ethyl cellulose and a solvent component such as ptylcarbitol.
  • a mixed paste of a resistor and a protective element is prepared by kneading using three rolls or the like.
  • Sarako a mixed powder containing silver as the main component and added with an appropriate amount of glass frit, is added with a fat component such as ethyl cellulose, and a solvent component such as butyl carbitol, and a three-necked one-pipe is used.
  • a silver paste is prepared by mixing.
  • a silver paste is screen-printed on one side of the substrate 31 which also has an alumina force, and 50
  • the first extraction electrode 32 is formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes.
  • a mixture paste of a resistor and a protective element is screen-printed so as to cover a part of the first extraction electrode 32, and dried at 50 to 150 for 0.5 to 3 minutes.
  • No. 1 The silver paste constituting the two extraction electrodes 33 is screen-printed, dried at 50 to 150 ° C for 0.5 to 3 minutes, and further heat-treated at 500 to 900 ° C for 15 to 180 minutes, whereby the mixture 34 and A second extraction electrode 33 is formed.
  • a paste having silver, glass frit, organic vehicle or the like is applied to one end of the substrate 31 so as to be electrically joined to one end of the first extraction electrode 32, and the second extraction is performed.
  • a paste made of silver, glass frit, organic vehicle, or the like is applied to the other end portion of the substrate 31 so as to be electrically joined to one end portion of the electrode 33.
  • heat treatment was performed at 500 to 900 ° C. for 15 to 180 minutes, followed by baking to form a pair of external electrodes 35 and 36.
  • Table 2 shows the electrostatic test results of the conventional chip resistor and the chip resistor with electrostatic protection function according to the fourth embodiment of the present invention.
  • the impedance of the protection element 34b which is also a NORISTAKA that has SiC as its main component, is normally high, so it appears to be open, but when a high voltage of several kV or more is applied due to static electricity, SiC is the main component.
  • the protection element 34b which also serves as a NORISTACKER, has a sudden drop in impedance, preferentially bypasses static electricity, and the impedance is restored and increased again after the static electricity has passed.
  • the protection element 34b in the mixture 34 can bypass static electricity.
  • the electrostatic pulse withstand capability of the chip resistor with electrostatic protection function can be increased.
  • the protective element 34b is included in the mixture 34 together with the resistor 34a, the number of parts is not increased as if the protective element 34b was provided separately from the chip resistor. As a result, the cost can be reduced and the device using the chip resistor with the electrostatic protection function can be downsized.
  • the mixture 34 including the resistor 34a and the protection element 34b includes the resistor powder, the protection element powder that also has a varistor powder force, and the glass frit. Since the paste is formed using the mixed paste, the protective element 34b and the resistor 34a can be obtained simply by printing and baking a mixed paste containing the resistor powder, the protective element powder made of the varistor powder, and the glass frit. And can be formed. As a result, the printing process of the varistor powder and the printing process of the resistor powder in the case where the protective element and the resistor are separately formed can be replaced with the printing process of the mixed paste, which reduces the printing process and produces Cost can be reduced. Furthermore, the protective element 34b, which is also a Pari stacker composed mainly of SiC, can be formed in the same part as the resistor 34a, so that the size of the part can be reduced.
  • FIG. 13 is a perspective view of a chip-type resistor with electrostatic protection function according to Embodiment 5 of the present invention
  • FIG. 14 is a cross-sectional view taken along line 14-14 in FIG. 13
  • FIG. 15 is equipped with the electrostatic protection function shown in FIG.
  • FIG. 6 is an equivalent circuit diagram of a chip resistor.
  • a substrate 41 is a substrate configured using alumina, for example.
  • first and second resistor extraction electrodes 42 and 43 On one surface of the substrate 41, there are first and second resistor extraction electrodes 42 and 43, and a resistor 44 electrically connected between the first and second resistor extraction electrodes 42 and 43. Is formed.
  • the pair of external electrodes 45 and 46 is formed at both ends of the substrate 41.
  • the external electrode 45 is connected to the external electrode 46 via the first resistor take-out electrode 42, the resistor 44, and the second resistor take-out electrode 43.
  • a first protection element extraction electrode 48 On one surface of the substrate 41, a first protection element extraction electrode 48, a protection element 47 made of a varistor mainly composed of SiC, and a second protection element extraction electrode 49 are formed. Side electrodes 50 are formed on both sides of the substrate 41. The external electrode 45 is electrically connected to the side electrode 50 via the first protection element extraction electrode 48, the protection element 47, and the second protection element extraction electrode 49.
  • the circuit diagram of the chip resistor with electrostatic protection function in the fifth embodiment of the present invention described above is shown by an equivalent circuit diagram shown in FIG.
  • the chip resistor with electrostatic protection function according to the fifth embodiment is configured such that one end of the resistor 44 and one end of the protection element 47 are connected to each other by the first resistor take-out electrode 42 and the first protection element take-out electrode 48.
  • the second resistor extraction electrode 43 connected to the electrode 45 and connected to the other end of the resistor 44 and the second protection element extraction electrode 49 connected to the other end of the protection element 47 are connected to each other. Without being connected to the external electrode 46 and the side electrode 50, respectively.
  • the chip resistor with electrostatic protection function according to the fifth embodiment of the present invention has a three-terminal structure having the external electrodes 45 and 46 and the side electrode 50, and therefore the protective element 47 is the second element.
  • the side electrode 50 connected via the protective element extraction electrode 49 can be used to connect to ground and bypass static electricity to ground.
  • both ends of the resistor 44 are connected to the external electrodes 45 and 46, respectively, and both ends of the protective element 47 are connected to the external electrode 45 and the side electrode 50. So
  • the chip resistor with electrostatic protection function shown in FIG. 13 is attached to a circuit board, for example, a printed wiring board, the external electrode 46 and the side electrode 50 should be connected.
  • the resistor 44 and the protective element 47 can be connected in parallel.
  • the static electricity applied to the resistor 44 can be bypassed by the protective element 47. Can be increased.
  • the resistor 44 and the protection element 47 are formed on the same substrate 41, the number of parts increases as if the protection element 47 was provided separately from the chip resistor. This has the effect of reducing costs and reducing the size of the equipment.
  • FIG. 16 is a perspective view of a chip resistor with electrostatic protection function according to Embodiment 6 of the present invention
  • FIG. 17 is a sectional view taken along line 17-17 in FIG. 16
  • FIG. 18 is a chip with electrostatic protection function shown in FIG.
  • FIG. 3 is an equivalent circuit diagram of a type resistor.
  • a substrate 51 is a substrate made of alumina, for example.
  • the first and second resistor take-out electrodes 52 and 53, the resistor 54, the first and third protection element take-out electrodes 58 and 59, and the second protection element take-out An electrode 60 and a protective element 57 that is also a Pari stacker mainly composed of SiC are formed.
  • a pair of external electrodes 55 and 56 are formed on both ends of the substrate 51.
  • side electrodes 61 are formed on both sides of the substrate 51.
  • the external electrode 55 is electrically connected to the external electrode 56 via the first resistor take-out electrode 52, the resistor 54, and the second resistor take-out electrode 53. Further, the external electrode 55 includes a first protection element extraction electrode 58, a protection element 57, and a third protection element extraction electrode 59. And is electrically connected to the side electrode 61 via the first protective element extraction electrode 58, the protective element 57, and the second protective element extraction electrode 60. Has been.
  • the resistor 54 and the protective element 57 are connected in parallel, and both ends of the resistor 54 are connected to the external electrode 61 via the protective element 57, respectively. It is done.
  • this configuration is equivalent to a ⁇ -type filter in which two protection elements 57 are connected to both ends of the resistor 54, respectively.
  • the chip resistor with electrostatic protection function shown in FIG. 13 is attached to a circuit board, for example, a printed wiring board, if the side electrode 61 is connected to the ground, the static electricity applied to the resistor 54 Can be bypassed to the ground by the protective element 57, and the electrostatic pulse resistance of the chip resistor with electrostatic protection function can be increased.
  • the resistor 54 and the protection element 57 are formed on the same substrate 51, the number of components increases as if the protection element 57 was provided separately from the chip resistor. In addition to this, it is possible to reduce costs and to reduce the size of equipment using this chip-type resistor with an electrostatic protection function.
  • a protection element 57 that serves as a bypass path to the ground is connected before and after the resistor 54, respectively. Because it is possible to bypass static electricity regardless of the direction of static electricity penetration, there is no need to consider the direction when mounting a chip resistor with an electrostatic protection function on a circuit board. It is what has.
  • the electrostatic protection element 7 is sandwiched between the first electrostatic protection element extraction electrode 8 and the second electrostatic protection element extraction electrode 9.
  • the electrical connection is intended with a sandwich structure, it is not limited to this connection structure.
  • the first and second electrostatic protection element extraction electrodes 8 , 9 is formed with a gap on one surface of the substrate 1, and the electrostatic protection element 7 is formed on the first and second electrostatic protection element take-out electrodes 8, 9 so as to fill the gap.
  • ⁇ ⁇ also try to make electrical connection with gap structure.
  • electrical connection is made with a sandwich structure in which the resistor 24 is sandwiched between the first extraction electrode 22 and the second extraction electrode 23.
  • the first and second extraction electrodes 22 and 23 are formed on one surface of the substrate 21 with a gap between them.
  • the antibody 24 is formed on the first and second extraction electrodes 22 and 23 so as to fill this gap, it is also possible to achieve electrical connection with a gap structure.
  • a mixture 34 including a resistor and a protection element is sandwiched between first extraction electrode 32 and second extraction electrode 33.
  • the electrical connection is achieved by the sand switch structure, the present invention is not limited to this connection structure.
  • the first and second extraction electrodes 32 and 33 are connected to the substrate 31.
  • a gap structure is formed in which a mixture 34 including a resistor and a protection element is formed on the first and second extraction electrodes 32 and 33 so as to fill the gap. It may be possible to make an electrical connection by construction.
  • the protection element 47 is replaced with a first protection element extraction electrode 48 and a second protection element extraction electrode 49.
  • the first and second protective element extraction electrodes 48 are not limited to this connection structure. , 49 are formed on one surface of the substrate 41 with a gap, and the protective element 47 is formed on the first and second protective element extraction electrodes 48, 49 so as to fill the gap. Electrical connection may be achieved with a structure.
  • the protective element 57 is replaced with the first and third protective element extraction electrodes 58 and 59 and the second protective element.
  • the electrical connection is achieved with a sandwich structure sandwiched between the extraction electrodes 60, the present invention is not limited to this connection structure.
  • the first, second, second Three protective element extraction electrodes 58, 60, 59 are formed on one surface of the substrate 51 with a gap therebetween, and the first, second, and third protection element extraction electrodes 58, 60 are formed so as to fill the gap.
  • Electrical connection may be achieved with a gap structure in which a protective element 57 is formed on 60, 59.
  • FIG. 26 is a perspective view of the chip component with electrostatic protection function according to Embodiment 7 of the present invention
  • FIG. 27 is a sectional view taken along line 27-27 in FIG. 26
  • FIG. 28 is an equivalent circuit of the chip component with electrostatic protection function shown in FIG. FIG.
  • a substrate 101 is a substrate configured using alumina, for example.
  • first and second capacitor element extraction electrodes 102, 103 are provided with force S.
  • a capacitive element 104 (capacitor) is formed so as to be electrically connected between the first capacitive element extraction electrode 102 and the second capacitive element extraction electrode 103.
  • a pair of external electrodes 105 and 106 are formed on both ends of the substrate 101. One end of the first capacitor element extraction electrode 102 is connected to the external electrode 105, and one end of the second capacitor element extraction electrode 103 is connected to the external electrode 106.
  • the electrostatic protection element 1 07 is a protection element composed of a SiC, which is mainly composed of SiC and formed in parallel with the capacitive element 104 on one surface of the substrate 101. For example, an overvoltage is applied by electrostatic nors or surge voltage. Impedance decreases.
  • the electrostatic protection element 107 is electrically connected to a pair of external electrodes 105 and 106 via first and second electrostatic protection element extraction electrodes 108 and 109.
  • a capacitor element paste is prepared by adding a koji component such as cellulose and a solvent component such as butyl carbitol and kneading using a three-roll roll. In the same manner, a resin component such as ethyl cellulose and a solvent component such as butyl carbitol are added to a mixed powder containing SiC as a main component and an appropriate amount of glass frit, and kneaded using a three-roll unit. Thus, an electrostatic protection element paste made of a varistor paste is produced.
  • a silver paste is screen-printed on one surface of the substrate 101 made of alumina, dried at 50 to 150 ° C for 0.5 to 3 minutes, and then heat treated at 500 to 900 ° C for 15 to 180 minutes.
  • the first capacitor element extraction electrode 102 and the first electrostatic protection element extraction electrode 108 are formed.
  • the capacitive element paste is screen-printed so as to cover a part of the first capacitive element extraction electrode 102 and dried at 50 to 150 ° C. for 0.5 to 3 minutes.
  • an electrostatic protection element paste is screen-printed so as to cover a part of the first electrostatic protection element extraction electrode 108 and dried at 50 to 150 ° C. for 0.5 to 3 minutes.
  • silver paste constituting each of the second capacitive element extraction electrode 103 and the second electrostatic protection element extraction electrode 109 is screen-printed on the dried capacitive element paste and the electrostatic protection element paste. Dry at 150 ° C for 0.5-3 minutes.
  • the capacitor element 104, the electrostatic protection element 107, the second capacitor element extraction electrode 103, and the second electrostatic protection element extraction electrode 109 are formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes.
  • the thickness of the electrostatic protection element 107 is desirably 200 ⁇ m or less in order to exhibit a sufficient electrostatic absorption effect.
  • one end of the substrate 101 is silver, glass frit, organic, so as to be electrically joined to one end of the first capacitor element extraction electrode 102 and the first electrostatic protection element extraction electrode 108.
  • Apply a paste that also has a vehicle isotropic force, and the second capacitive element extraction electrode 103 and the second static electricity A paste having silver, glass frit, organic vehicle and the like is applied to the other end of the substrate 1 so as to be electrically joined to one end of the protective element extraction electrode 109.
  • heat treatment was performed at 500 to 900 ° C. for 15 to 180 minutes, and baking was performed to form a pair of external electrodes 105 and 106.
  • the chip component with an electrostatic protection function according to the seventh embodiment of the present invention was manufactured. .
  • Table 3 shows the electrostatic test results of the conventional capacitive element and the chip component with electrostatic protection function according to the seventh embodiment of the present invention.
  • the electrostatic protection element 107 has a high impedance, it appears to be open, but when a high voltage of several kV or more is applied due to static electricity, the impedance of the electrostatic protection element 107 suddenly drops and bypasses static electricity preferentially. Let This is because the impedance is restored and increased again after the static electricity has passed, so that the electrostatic capacity of the chip component with the electrostatic protection function is prevented from being reduced by static electricity.
  • the thickness of the electrostatic protection element 107 is preferably 200 m or less.
  • FIG. 29 is a perspective view of a chip part with an electrostatic protection function in Embodiment 8 of the present invention
  • FIG. 30 is a cross-sectional view of the chip part with an electrostatic protection function shown in FIG.
  • a substrate 111 is a substrate configured using alumina, for example.
  • first and second extraction electrodes 112 and 113 are provided on one surface of the substrate 111.
  • the capacitor element 114 force is formed by being electrically connected between the first extraction electrode 112 and the second extraction electrode 113.
  • the first extraction electrode 112, the capacitance element 114, and the second extraction electrode 113, an electrostatic protection element 117, and a third extraction electrode 118 are provided in this order.
  • a pair of external electrodes 115 and 116 are formed at both ends of the substrate 111 and are electrically connected to the first and second extraction electrodes 12 and 13, respectively.
  • the electrostatic protection element 117 is an electrostatic protection element composed of a varistor mainly composed of SiC formed on the capacitor element 114. When an overvoltage is applied by, for example, an electrostatic pulse or a surge voltage, the impedance is reduced. descend.
  • the electrostatic protection element 117 is electrically connected to the second extraction electrode 113 and electrically connected to the first extraction electrode 112 through the third extraction electrode 118.
  • the electrostatic protection element 117 such as a Pali stacker mainly composed of SiC is laminated on the capacitive element 114, and the electrostatic The air protection element 117 is electrically connected to the second extraction electrode 113 and the third extraction electrode 113. Since the capacitor element 114 and the electrostatic protection element 117 are connected in parallel, the static electricity applied to the capacitor element 114 is Since it can be bypassed by the protection element 117, it is possible to increase the electrostatic pulse resistance of the chip component with the electrostatic protection function.
  • the electrostatic protection element 117 is formed by being laminated on the capacitor element 114, the electrostatic protection element 117 and the capacitor element 114 are formed on one surface of the substrate 111 side by side.
  • the size of the chip component with the electrostatic protection function can be reduced.
  • the mounting area of the chip component with the electrostatic protection function can be reduced, and the number of components does not increase unlike the case where the electrostatic protection element 117 is provided separately from the chip component with the electrostatic protection function. This has the effect of reducing costs and reducing the size of equipment using chip parts with an electrostatic protection function.
  • FIG. 31 is a perspective view of the chip component with electrostatic protection function according to the ninth embodiment of the present invention as viewed from the upper surface side
  • FIG. 32 is a perspective view of the chip component with electrostatic protection function as viewed from the back side
  • FIG. It is sectional drawing of the chip component with an electrostatic protection function shown in FIG.
  • a substrate 121 is a substrate made of alumina, for example.
  • first and second extraction electrodes 122 and 123 and a capacitor element 124 electrically connected between the first and second extraction electrodes 122 and 123 are formed. It is.
  • the external electrodes 125 and 126 are a pair of electrodes that are formed at both ends of the substrate 121 and are electrically connected to the first and second extraction electrodes 122 and 123.
  • the electrostatic protection element 127 is a protection element such as a Pali stacker mainly composed of SiC formed on the other surface of the substrate 121 so as to be substantially opposed to the capacitor element 124 with the substrate 121 interposed therebetween.
  • the electrostatic protection element 127 is electrically connected to the external electrode 125 via the third extraction electrode 128.
  • the third extraction electrode 128 is connected to the fourth extraction electrode 129 via the electrostatic protection element 127, and the fourth extraction electrode 129 is connected to both sides of the substrate 121. It is electrically connected to the formed side electrodes 130a and 130b.
  • both ends of capacitive element 124 are connected to external electrodes 125 and 126, respectively, and both ends of electrostatic protection element 127 are external electrode 125 and side electrode 130a.
  • 130b are connected to the external electrode 126 and at least one of the side electrodes 130a, 130b when the chip component with the electrostatic protection function shown in FIG. 31 is attached to a circuit board, for example, a printed wiring board.
  • the capacitance element 124 and the electrostatic protection element 127 can be connected in parallel.
  • the static electricity applied to the capacitance element 124 can be bypassed by the electrostatic protection element 127, and the electrostatic protection function is provided.
  • the electrostatic pulse tolerance of the chip component can be increased.
  • the capacitive element 124 Since the applied static electricity can be bypassed to the round by the electrostatic protection element 127, the electrostatic pulse withstand capability of the chip component with the electrostatic protection function can be increased.
  • the electrostatic protection element 127 is formed on the other surface of the substrate 121 on which the capacitor element 124 is formed on one surface so as to substantially face the capacitor element 124 with the substrate 121 interposed therebetween. Therefore, the substrate area can be reduced as compared with the case where the electrostatic protection element 127 and the capacitor element 124 are formed side by side on one surface of the substrate 121. As a result, the size of the chip component with the electrostatic protection function can be reduced. it can. This reduces the mounting area of chip parts with electrostatic protection functions, and does not increase the number of parts unlike the case where the electrostatic protection element 127 is provided separately from the chip-type capacitive element. In addition to being able to reduce the size, it is possible to reduce the size of the device using the chip component with the electrostatic protection function.
  • FIG. 34 is a perspective view of a chip component with an electrostatic protection function in Embodiment 10 of the present invention
  • FIG. 35 is a cross-sectional view of the chip component with an electrostatic protection function shown in FIG. 34
  • FIG. 36 is a chip with an electrostatic protection function shown in FIG. Fig. 37 is an enlarged schematic diagram between the part extraction electrodes.
  • FIG. 35 is an equivalent circuit diagram of the chip component with electrostatic protection function shown in FIG.
  • a substrate 131 is a substrate that is made of alumina, for example.
  • the first and second extraction electrodes 132 and 133 are formed on one surface of the substrate 131.
  • the first and second extraction electrodes 132 and 133 are interposed between the capacitor element 134a and SiC.
  • a mixture 134 including an electrostatic protection element 134b made of a varistor as a component is electrically connected.
  • the pair of external electrodes 135 and 136 are formed at both ends of the substrate 131.
  • the mixture 134 is connected to the external electrode 135 via the first extraction electrode 132 and is connected to the external electrode 136 via the second extraction electrode 133.
  • the chip component with an electrostatic protection function in Embodiment 10 of the present invention has the first extraction electrode 132 and the second extraction electrode 132 as shown in the enlarged schematic diagram of FIG.
  • a mixture 134 in which capacitive element particles 134c and protective element particles 134d are mixed is formed between the extraction electrode 133.
  • An equivalent circuit diagram in this case can be represented by the circuit diagram shown in FIG.
  • Protective element powder to be mixed at an appropriate blending ratio, and an appropriate amount of glass frit is added to the mixed powder.
  • Carbide components such as ethyl cellulose and solvent components such as ptylcarbitol are prepared, and three rolls, etc.
  • the mixture base of the capacitive element and the protective element is prepared by kneading using the above.
  • a mixed powder containing silver as a main component and added with an appropriate amount of glass frit is mixed with a resin component such as ethyl cellulose and a solvent component such as ptyl carbitol, and kneaded using a three-roll unit. This produces a silver paste.
  • silver paste is screen-printed on one surface of the substrate 131 made of alumina, and 50 to 1
  • a first extraction electrode 132 is formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes.
  • a mixed paste of the capacitive element and the protective element is screen-printed so as to cover a part of the first extraction electrode 132, and dried at 50 to 150 ° C. for 0.5 to 3 minutes.
  • a silver paste constituting the second extraction electrode 133 is screen-printed on the mixture paste, and 50 to 150 ° C.
  • the mixture 134 and the second extraction electrode 133 are formed by drying for 0.5 to 3 minutes at 500 to 900 ° C. for 15 to 180 minutes.
  • the thickness of the mixture 134 is desirably formed between 20 and 200 ⁇ m in order to secure a desired capacitance value and to exhibit a sufficient electrostatic absorption effect.
  • a paste that also has silver, glass frit, organic vehicle or the like is applied to one end of the substrate 131 so as to be electrically joined to one end of the first extraction electrode 132, and the second A paste made of silver, glass frit, organic vehicle or the like is applied to the other end of the substrate 131 so that it is electrically joined to one end of the extraction electrode 133.
  • heat treatment was performed at 500 to 900 ° C. for 15 to 180 minutes, followed by baking to form a pair of external electrodes 135 and 136, thereby producing a chip component with an electrostatic protection function in Embodiment 10 of the present invention.
  • Table 4 shows the electrostatic test results of the conventional capacitive element and the chip component with the electrostatic protection function in the tenth embodiment of the present invention.
  • the capacitive element is an insulator, so that the static electricity passes through the discharge electrode between the shortest distances.
  • the electrostatic capacity is reduced, in the tenth embodiment of the present invention, even if static electricity is applied, the static electricity is in the protective element particle 134d side in the mixture 134 in which the capacitive element particles 134c and the protective element particles 134d are mixed. This is because static electricity is not applied to the capacitive element particles 134c.
  • the impedance of the electrostatic protection element 134b consisting of a varistor composed mainly of SiC is normally high, so it appears to be open, but when a high voltage of several kV or more is applied due to static electricity, SiC
  • the capacitive element is electrically connected to the first and second extraction electrodes 132 and 133 formed on one surface of the substrate 131. Since the mixture 134 including the 134a and the electrostatic protection element 134b is formed, the electrostatic protection element 134b in the mixture 134 can cause the static electricity to be biased. The tolerance can be increased. In addition, since the electrostatic protection element 134b is included in the mixture 134 including the capacitive element 134a, the number of parts increases as if the electrostatic protective element 134b was provided separately from the chip-type capacitive element. As a result, this has the effect of reducing costs and reducing the size of the equipment.
  • the mixture 134 including the capacitive element 134a and the electrostatic protection element 134b is replaced with the protective element powder and the glass frit made of the capacitive element powder and the varistor powder.
  • the electrostatic protective element 134b and the capacitive element are simply formed by printing and baking the mixed paste containing the capacitive element powder and the protective element powder that also has varistor powder power and the glass frit. 134a can be formed.
  • the printing process of the varistor powder and the printing process of the resistor powder in the case where the protective element and the resistor are individually formed can be replaced with the printing process of the mixed paste, thereby reducing the printing process. Production costs can be reduced.
  • the electrostatic protection element 134b which is also a Pali stacker composed mainly of SiC, can be formed in the same part as the capacitor element 134a, the size of the component can be reduced.
  • FIG. 38 is a perspective view of the chip component with electrostatic protection function according to Embodiment 11 of the present invention
  • FIG. 39 is a sectional view taken along line 39-39 in FIG. 38
  • FIG. 40 is equivalent to the chip component with electrostatic protection function shown in FIG. It is a circuit diagram.
  • the substrate 141 is a substrate made of alumina, for example.
  • the first and second capacitive element extraction electrodes 142 and 143 and the capacitive element 144 electrically connected between the first and second capacitive element extraction electrodes 142 and 143 are provided. And are formed.
  • the pair of external electrodes 145 and 146 is formed at both ends of the substrate 141.
  • the external electrode 145 is connected to the external electrode 146 via the first capacitor element extraction electrode 142, the capacitor element 144, and the second capacitor element extraction electrode 143.
  • a first electrostatic protection element extraction electrode 148 On one surface of the substrate 141, a first electrostatic protection element extraction electrode 148, an electrostatic protection element 147 made of a varistor mainly composed of SiC, and a second electrostatic protection element extraction electrode 149
  • the side electrode 150 is formed on the side portion of the substrate 141.
  • the external electrode 145 is electrically connected to the side electrode 150 via the first electrostatic protection element extraction electrode 148, the electrostatic protection element 147, and the second electrostatic protection element extraction electrode 149.
  • FIG. 1 The circuit diagram of the chip component with electrostatic protection function according to the eleventh embodiment of the present invention is shown by an equivalent circuit diagram shown in FIG.
  • one end of the resistor 144 and one end of the protective element 147 are externally connected to each other by the first resistor extraction electrode 142 and the first electrostatic protection element extraction electrode 148.
  • the second resistor take-out electrode 14 3 connected to the electrode 14 5 and connected to the other end of the resistor 144 and the second ESD protection element take-out electrode 149 connected to the other end of the electrostatic protection element 147 Connected to external electrode 146 and side electrode 150 without being connected to each other
  • the chip component with an electrostatic protection function has a three-terminal structure having the external electrodes 145, 146 and the side electrode 150, so that the electrostatic protection element 1 By connecting the side electrode 150 to which 47 is connected via the second electrostatic protection element extraction electrode 149 to the ground, the electrostatic protection element 147 can bypass the static electricity to the ground.
  • both ends of capacitive element 144 are connected to external electrodes 145 and 146, respectively, and both ends of electrostatic protection element 147 are external electrode 145 and side electrode 150. If the external electrode 146 and the side electrode 150 are connected when the chip component with an electrostatic protection function shown in FIG. 38 is attached to a circuit board, for example, a printed wiring board, the capacitance As a result of the parallel connection of the element 144 and the electrostatic protection element 147, the static electricity applied to the capacitor element 144 can be bypassed by the electrostatic protection element 147 ⁇ , and the electrostatic pulse resistance of the chip component with the electrostatic protection function can be reduced. The amount can be increased.
  • the capacitive element 144 and the electrostatic protection element 147 are formed on the same substrate 141, the number of parts is increased as if the electrostatic protection element 147 was provided separately from the chip-type capacitive element. As a result, the cost can be reduced and the device using the chip component with the electrostatic protection function can be downsized.
  • FIG. 41 is a perspective view of the chip component with electrostatic protection function according to the twelfth embodiment of the present invention
  • FIG. 42 is a sectional view taken along the line 42-42 of FIG. 41
  • FIG. 43 is the chip component with electrostatic protection function shown in FIG. FIG.
  • a substrate 151 is a substrate that is made of alumina, for example.
  • first and second capacitor element extraction electrodes 152 and 153, a capacitor element 154, first and third electrostatic protection element extraction electrodes 158 and 159, and a second static electricity An electrical protection element extraction electrode 160 and an electrostatic protection element 157 made of a varistor mainly composed of SiC are formed.
  • a pair of external electrodes 155 and 156 are formed on both ends of the substrate 151.
  • Side electrodes 161 are formed on both sides of the substrate 151.
  • the external electrode 155 is electrically connected to the external electrode 156 via the first capacitor element extraction electrode 152, the capacitor element 154, and the second capacitor element extraction electrode 153. Further, the external electrode 155 is electrically connected to the external electrode 156 via the first electrostatic protection element extraction electrode 158, the electrostatic protection element 157, and the third electrostatic protection element extraction electrode 159. The electrostatic protection element extraction electrode 158, the electrostatic protection element 157, and the second electrostatic protection element extraction electrode 160 are electrically connected to the side electrode 161.
  • capacitive element 154 and electrostatic protection element 157 are connected in parallel, and both ends of capacitive element 154 are connected to the side portions via electrostatic protection element 157, respectively. Connected to electrode 161.
  • this configuration is equivalent to a ⁇ -type filter in which two electrostatic protection elements 157 are connected to both ends of the capacitive element 154, respectively.
  • the chip part with an electrostatic protection function shown in Fig. 41 is attached to a circuit board, for example, a printed wiring board, if the side electrode 161 is connected to the ground, the static electricity applied to the capacitor 154 can be statically
  • the protective element 157 can be bypassed to the ground, and the electrostatic pulse resistance of the chip component with the electrostatic protection function can be increased.
  • the capacitive element 154 and the electrostatic protection element 157 are formed on the same substrate 151, the number of parts increases as if the electrostatic protection element 157 was provided separately from the chip-type capacitive element. As a result, the cost can be reduced and this static If a device using a chip component with an electrical protection function can be reduced in size, it has a positive effect.
  • the electrostatic protection element 157 serving as a bypass path to the ground is connected before and after the capacitive element 154, respectively. Because it is possible to bypass static electricity regardless of the direction of static electricity entry, there is no need to consider the direction when mounting a chip component with an electrostatic protection function on a circuit board! Has an effect.
  • FIG. 44 is a perspective view of a chip part with an electrostatic protection function in Embodiment 13 of the present invention
  • FIG. 45 is an equivalent circuit diagram of the chip part with an electrostatic protection function shown in FIG.
  • a substrate 171 is a substrate made of alumina, for example.
  • the external electrodes 175 and 176 are a pair of external electrodes formed at both ends of the substrate 171 and electrically connected to the first and second resistor take-out electrodes 172 and 173.
  • the capacitive element 177 is a capacitive element formed in parallel with the resistor 174 on the substrate 171.
  • the capacitive element 177 is one of the pair of external electrodes 175 and 176 via the first capacitive element extraction electrode 178.
  • the external electrode 175 is electrically connected.
  • the electrostatic protection element 179 is an electrostatic protection element such as a Pali stacker mainly composed of SiC formed in parallel with the capacitor element 177.
  • the electrostatic protection element 179 is electrically connected to one external electrode 175 of the pair of external electrodes 175 and 176 via the first electrostatic protection element take-out electrode 180 and the second electrostatic protection element 179.
  • the protective element extraction electrode 181 is electrically connected to the capacitor element 177 and the side electrode 182 formed on the side portion of the substrate 171.
  • the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention has a three-terminal structure having the external electrodes 175 and 176 and the side electrode 182. Then, by using the side electrode 182 connected to the ground, the static electricity applied to the resistor 174 and the capacitor 177 is reduced by the electrostatic protection element 179 in the RC filter that also acts as the resistor 174 and the capacitor 177. It can be bypassed to ground. As a result, it is possible to improve the electrostatic pulse withstand capability of the chip component with the electrostatic protection function constituting the RC filter.
  • the resistor 174, the capacitor 177, and the electrostatic protection element 179 are formed on the same substrate 171, an RC filter that works together with the resistor 174 and the capacitor 177, and the RC filter
  • the electrostatic protection element 179 that is to be protected can be configured on a single chip, and the number of components increases as if the resistor 174, the capacitive element 177, and the electrostatic protection element 179 were provided separately. As a result, the cost can be reduced and the device using the chip component with the electrostatic protection function can be downsized.
  • a resistor paste is prepared by adding a koji component such as loin and a solvent component such as butyl carbitol and kneading using a three-roll unit.
  • a capacitor element paste is prepared by adding a koji component such as chill cellulose and a solvent component such as butyl carbitol and kneading using three rolls. In the same manner, a mixed powder containing SiC as a main component and added with an appropriate amount of glass frit is added with a resin component such as ethyl cellulose and a solvent component such as butyl carbitol, and kneaded using a three-roll unit. Thus, an electrostatic protection element paste made of a varistor paste is produced.
  • a mixed powder containing silver as a main component and added with an appropriate amount of glass frit is mixed with a three-roll roll or the like by adding a koji component such as ethyl cellulose and a solvent component such as butyl carbitol and kneading using a three-roll roll. Make a paste.
  • a silver paste is screen-printed on a substrate 171 having an alumina force, dried at 50 to 150 ° C for 0.5 to 3 minutes, and then heat-treated at 500 to 900 ° C for 15 to 180 minutes.
  • the first resistor extraction electrode 172, the first capacitor element extraction electrode 178, and the first electrostatic protection element extraction electrode 180 are formed.
  • a resistor paste is screen-printed so as to cover a part of the first resistor take-out electrode 172 and dried at 50 to 150 ° C for 0.5 to 3 minutes, and the first capacitor element is taken out.
  • Capacitor paste is screen-printed to cover part of electrode 178 and dried at 50-150 ° C for 0.5-3 minutes.
  • an electrostatic protection element paste is screen-printed so as to cover a part of the first electrostatic protection element extraction electrode 180 and dried at 50 to 150 ° C. for 0.5 to 3 minutes.
  • a silver paste constituting the second resistor extraction electrode 173 is screen-printed on the resistor antibody paste and dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then the capacitive element paste and the electrostatic protection element paste.
  • the silver paste that constitutes the second ESD protection element extraction electrode 181 is screen printed on the substrate and dried at 50 to 150 ° C for 0.5 to 3 minutes.
  • the resistor 174, the capacitor element 177, the electrostatic protection element 179, the second resistor extraction electrode 173, and the second electrostatic protection An element extraction electrode 181 is formed.
  • the thickness of the electrostatic protection element 179 is desirably 200 m or less in order to exhibit a sufficient electrostatic absorption effect.
  • first resistor extraction electrode 172 one end of the first resistor extraction electrode 172, one end of the first capacitor element extraction electrode 178, and one end of the first electrostatic protection element extraction electrode 180 are electrically joined.
  • a paste having silver, glass frit, organic vehicle or the like constituting the external electrode 175 is applied to one end of the substrate 171 and electrically bonded to one end of the second resistor extraction electrode 173.
  • a paste containing silver, glass frit, organic vehicle or the like constituting the external electrode 176 is applied.
  • the silver constituting the side electrode 182 is formed on the side of the substrate 171 so as to be electrically joined to one end of the second electrostatic protection element extraction electrode 181. Apply a paste that also has glass frit, organic vehicle and the like.
  • a pair of external electrodes 175, 176 and side electrodes 182 are formed by heat treatment at 500-900 ° C. for 15-180 minutes and baking, and the chip with electrostatic protection function in Embodiment 13 of the present invention is formed. Parts were produced.
  • Table 5 shows the electrostatic test results of the conventional RC filter and the chip component with the electrostatic protection function according to the thirteenth embodiment of the present invention.
  • the chip part with electrostatic protection function according to the thirteenth embodiment of the present invention is manufactured as shown in the circuit diagram shown in FIG. 45, and the circuit A shown in FIG. 46 and the circuit shown in FIG. Indicate the results of each connection when B is connected.
  • Circuit A is wired so that electrostatic protection element 179 is placed upstream of resistor 174 in static electricity application path X
  • circuit B is electrostatic protection element 179 downstream of resistor 174 in the static electricity application path.
  • the resistance of a resistor in a RC filter is smaller than that of a capacitor in an RC filter, so it is necessary to take special countermeasures against the resistor.
  • the circuit A of the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention has the electrostatic protection element 179 for both the resistor 174 and the capacitor 177. Since it works as a no-path path, the resistance value (R value) of the resistor 174 and the capacitance value (C value) of the capacitor 177 do not change even after static electricity is applied.
  • the electrostatic protection element 179 which is also a Pali stucer mainly composed of SiC, works as a bypass path for the capacitor element 177, but does not work for the resistor 174. Therefore, it is desirable to connect the chip component with electrostatic protection function in the thirteenth embodiment of the present invention in the form of circuit A.
  • the electrostatic protection element 179 is formed on the same substrate for other filters such as an LC filter and an LR filter. As a result, noise and static electricity can be taken at the same time.
  • SiC is mainly disposed on the capacitor element 177 as in the eighth embodiment of the present invention.
  • the capacitor element 177 is formed on one surface of the substrate 171 and the one surface of the substrate 171 is formed as in the ninth embodiment of the present invention.
  • the electrostatic protection element 179 is formed so as to face the capacitive element 177 with the substrate 171 interposed therebetween, or in the same manner as in the tenth embodiment of the present invention, the capacitive element 134a and the electrostatic protection element 134b are included.
  • the capacitive element 177 And the electrostatic protection element 179 are formed together, the same effects as those of the eighth, ninth, and tenth embodiments of the present invention can be exhibited.
  • a NORISTA mainly composed of SiC is used as the electrostatic protection element 107, 117, 127, 134b, 147, 157, 179!
  • the present invention is not limited to this embodiment, and even in the case where, for example, a varistor mainly composed of ZnO, a protective element made of metal powder and resin, or the like is used, the embodiment of the present invention described above is used. It has the same effect as 7-13.
  • the electrostatic protection element 107 is connected to the first electrostatic protection element extraction electrode 108 and the second electrostatic protection element extraction electrode 109.
  • the first and second electrostatic protection element take-outs are not limited to this connection structure.
  • the electrodes 108 and 109 are formed with a gap on one surface of the substrate 101, and the electrostatic protection element 107 is formed on the first and second electrostatic protection element extraction electrodes 108 and 109 so as to fill the gap. Try to make electrical connection with the gap structure.
  • electrical connection is performed with a sandwich structure in which the capacitive element 124 is sandwiched between the first extraction electrode 122 and the second extraction electrode 123.
  • the first and second extraction electrodes 122 and 123 are formed with a gap on one surface of the substrate 121.
  • electrical connection may be achieved with a gap structure in which the capacitive element 124 is formed on the first and second extraction electrodes 122 and 123 so as to fill the gap.
  • a mixture 134 including a capacitive element and a protective element is composed of a first extraction electrode 132 and a second extraction electrode 133.
  • the sandwiched sandwich structure is used for electrical connection, but the present invention is not limited to this connection structure.
  • the first and second extraction electrodes 132 and 133 are connected to the substrate 131.
  • a mixture 134 including a capacitive element and a protective element is formed on the first and second extraction electrodes 132 and 133 so as to fill the gap on one side and fill the gap. Then, try to make electrical connection with a gap structure.
  • the electrostatic protection element 147 is replaced with the first electrostatic protection element extraction electrode 148 and the second electrostatic protection element extraction electrode.
  • the electrical connection is made with a sandwich structure sandwiched between 149 and 149, but is not limited to this connection structure.
  • the first and second electrostatic protections The element extraction electrodes 148 and 149 are formed on one surface of the substrate 141 with a gap, and the electrostatic protection element 147 is placed on the first and second electrostatic protection element extraction electrodes 14 8 and 149 so as to fill the gap. Make an electrical connection with a gap structure.
  • the electrostatic protection element 157 is connected to the first and third electrostatic protection element extraction electrodes 158 and 159 and the second electrostatic Electrical connection is achieved with a sandwich structure sandwiched between the protective element extraction electrode 160 and 1S.
  • the structure is not limited to this connection structure.
  • Third electrostatic protection element extraction electrodes 158, 160, 159 are formed with a gap on one surface of the substrate 151, and the first, second, and third electrostatic protection element extraction electrodes 158 are formed so as to fill the gap.
  • 160, 159 An electrostatic protection element 157 is formed on the gap structure so that electrical connection can be achieved.
  • the electrostatic protection element 179 is replaced with the first electrostatic protection element extraction electrode 180 and the second electrostatic protection element extraction electrode 181.
  • the electrical connection is made with a sandwich structure sandwiched between, but is not limited to this connection structure.
  • the first electrostatic protection element extraction electrode 180 and the second The first electrostatic protection element extraction electrode 181 and the second electrostatic protection element extraction electrode 181 are formed so that a gap is formed on one surface of the substrate 171 with a gap between the first electrostatic protection element extraction electrode 180 and the second electrostatic protection element extraction electrode 181. If an electrostatic protection element 17 9 is formed on the top, it may be possible to achieve electrical connection with a gap structure.
  • the chip component with an electrostatic protection function includes a substrate, a circuit element formed on the substrate, and an electrostatic circuit formed on the substrate in parallel with the circuit element.
  • a protection element formed on both ends of the substrate, the circuit element and the protection element;
  • a pair of external electrodes for connecting to an external circuit.
  • the circuit element formed on the substrate is protected from static electricity by the electrostatic protection element formed in parallel with the circuit element on the same substrate, and thus used for noise countermeasures.
  • the circuit element and countermeasures against static electricity of the circuit element can be performed by a single chip component with an electrostatic protection function.
  • the number of parts does not increase as in the case where noise countermeasure parts and static electricity countermeasure parts are separately provided on the same signal line, so that the cost can be reduced and this chip with electrostatic protection function can be used. It becomes easy to reduce the size of the equipment using parts.
  • the circuit element is preferably a resistor. According to this configuration, the resistor that may be deteriorated by static electricity can be protected by the electrostatic protection element.
  • the resistor is formed using a resistor paste
  • the electrostatic protection element is formed using an electrostatic protection element paste.
  • the electrostatic protection element can be formed by a simple method of printing and baking the electrostatic protection element paste using the same method. As a result, the manufacturing process of the chip component with the electrostatic protection function can be simplified and the production cost can be reduced.
  • a chip component with an electrostatic protection function includes a substrate, a resistor formed on the substrate, an electrostatic protection element formed on the substrate, and both ends of the substrate. A pair of external electrodes formed to connect the resistor and the protection element to an external circuit. According to this configuration, the electrostatic force can be protected by the electrostatic protection element for the resistor that may be deteriorated by static electricity.
  • the resistor and the electrostatic protection element are integrally formed using a mixed paste including a resistor powder, an electrostatic protection element powder, and glass frit.
  • a mixed paste including a resistor powder, an electrostatic protection element powder, and glass frit.
  • the circuit element may be a capacitive element. According to this configuration, the capacitive element that may be deteriorated by static electricity can be protected from static electricity by the electrostatic protection element.
  • the capacitive element may be formed using a capacitive element paste
  • the electrostatic protection element may be formed using an electrostatic protective element paste.
  • the capacitive element and the electrostatic protection element can be formed using the capacitive element paste and the electrostatic protection element paste, the capacitive element is formed when forming the electrostatic protection element.
  • the electrostatic protection element can be formed by a simple construction method in which the electrostatic protection element paste is printed and fired using the same construction method as that for forming. As a result, the manufacturing process of the chip component with the electrostatic protection function can be simplified and the production cost can be reduced.
  • a chip component with an electrostatic protection function includes a substrate, a capacitive element formed on the substrate, an electrostatic protection element formed on the substrate, and both ends of the substrate. And a pair of external electrodes for connecting the capacitive element and the protective element to an external circuit. According to this configuration, the capacitive element that may be deteriorated by static electricity can be protected from the static electricity by the electrostatic protection element.
  • the capacitive element and the electrostatic protection element may be integrally formed using a mixed paste containing capacitive element powder, electrostatic protection element powder, and glass frit.
  • the capacitive element powder printing process and the electrostatic protection element powder printing process in the case where the capacitive element and the electrostatic protection element are individually formed can be replaced with a mixed paste printing process. Therefore, the printing process is reduced and the production cost can be reduced. Furthermore, since the electrostatic protection element is formed in the same part as the capacitor element, it is possible to reduce the size of the chip component with the electrostatic protection function.
  • Both ends of the circuit element are electrically connected to the pair of external electrodes via first and second circuit element extraction electrodes formed on the substrate, respectively, and the electrostatic elements It is preferable that the air protection element is electrically connected to the pair of external electrodes via the first and second electrostatic protection element take-out electrodes.
  • the circuit element and the electrostatic protection element are electrically connected in parallel by the first and second circuit element extraction electrodes and the first and second electrostatic protection element extraction electrodes. Since the circuit element and the electrostatic protection element are electrically connected in parallel with a single chip component with an electrostatic protection function, the static electricity applied to the circuit element can be bypassed by the electrostatic protection element. As a result, it is possible to increase the electrostatic pulse resistance of the chip component with the electrostatic protection function.
  • both ends of the circuit element are electrically connected to first and second extraction electrodes respectively connected to the pair of external electrodes, and the electrostatic protection element is disposed on the circuit element. It is preferable that the electrodes are stacked in parallel and formed in parallel and electrically connected to the third extraction electrode and the second extraction electrode connected to the first extraction electrode.
  • the circuit element and the electrostatic protection element are electrically connected in parallel by the first, second, and third extraction electrodes and connected to the pair of external electrodes.
  • the static electricity applied to the circuit element can be bypassed by the electrostatic protection element.
  • the circuit element and the electrostatic protection element are stacked on the substrate, the circuit element and the electrostatic protection element are formed more than when the circuit element and the electrostatic protection element are formed side by side on one side of the substrate. As a result of reducing the area occupied by the element on the substrate, the chip component with the electrostatic protection function can be reduced in size.
  • the circuit element is formed on one surface of the substrate, and both ends of the circuit element are interposed via first and second circuit element extraction electrodes formed on one surface of the substrate. It is preferable that the pair of external electrodes are electrically connected to each other, and the electrostatic protection element is formed in parallel on the other surface of the substrate so as to be substantially opposed to the circuit element.
  • the circuit element formed on the substrate is electrostatically protected by the electrostatic protection element.
  • the circuit element is formed on one surface of the substrate and the electrostatic protection element is formed in parallel on the other surface of the substrate so as to be substantially opposite to the circuit element.
  • the substrate area can be reduced, so that the chip component with the electrostatic protection function can be reduced in size.
  • both ends of the circuit element are electrically connected to first and second extraction electrodes respectively connected to the pair of external electrodes, and the electrostatic protection element is a first protection element. It is electrically connected to one of the pair of external electrodes via the extraction electrode, and is electrically connected to the side electrode formed on the side of the substrate via the second protective element extraction electrode. I like to be connected to each other.
  • the electrostatic protection element is further electrically connected to the other external electrode of the pair of external electrodes via a third protective element extraction electrode.
  • the circuit element and the electrostatic protection element are connected in parallel, and both ends of the circuit element are connected to the side electrode via the electrostatic protection element.
  • the static electricity applied to the circuit element is bypassed by the static electricity protection element connected in parallel with the circuit element, so that the electrostatic pulse resistance of the chip component with the static electricity protection function can be increased.
  • both ends of the circuit element are connected to the side electrodes via the electrostatic protection elements, respectively, when this configuration is viewed from the side electrodes, the two electrostatic protection elements are respectively connected to both ends of the circuit element. It becomes the structure connected one by one.
  • the side electrode is formed on both sides of the substrate. According to this configuration, it is not necessary to consider the directionality of the side electrode when connecting the chip component with an electrostatic protection function to an external circuit.
  • the circuit element is a resistor, and is further electrically connected to the one external electrode via a capacitive element extraction electrode and via the second protection element extraction electrode. It is preferable that a capacitive element electrically connected to the side electrode is formed in parallel with the resistor on the substrate.
  • the capacitive element and the electrostatic protection element are connected in parallel, the static electricity applied to the capacitive element can be bypassed by the electrostatic protection element, and the capacitive element also has an electrostatic force. Can be protected. Further, by using the side electrode connected to the ground, static electricity applied to the resistor can be bypassed to the ground by the electrostatic protection element, and the resistor can be protected from static electricity. As a result, with respect to a circuit composed of a resistor and a capacitive element, the electrostatic noise resistance can be increased.
  • the resistor, the capacitive element, and the electrostatic protection element are formed on the same substrate, a circuit composed of the resistor and the capacitive element and an electrostatic protection element that protects the circuit from static electricity are provided. It can be composed of components, and the electrostatic pulse withstand capability of chip components with electrostatic protection functions can be increased while suppressing an increase in the number of components compared to the case where resistors, capacitors, and electrostatic protection devices are provided separately. Can do.
  • the chip component with an electrostatic protection function has a high electrostatic pulse withstand capability and the electrostatic protection element is formed on the substrate on which the capacitive element is formed, the electrostatic protection element The number of parts is increased as if it were provided separately from the capacitive element. This has the effect of reducing costs and downsizing the equipment, and can be applied to circuits requiring countermeasures against static electricity such as mobile phones and televisions.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

Un composant de puce doté d'une fonction de protection électrostatique est muni d'un subtrat ; un élément de circuit étant formé sur le substrat ; un élément de protection électrostatique étant formé parallèlement à l'élément de circuit sur le substrat ; et une paire d'électrodes externes étant formées sur les deux sections d'extrémité du substrat pour connecter l'élément de circuit et l'élément de protection avec un circuit extérieur.
PCT/JP2006/301883 2005-02-09 2006-02-03 Composant de puce dote d'une fonction de protection electrostatique WO2006085492A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007502588A JPWO2006085492A1 (ja) 2005-02-09 2006-02-03 静電気保護機能付きチップ部品

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005032548 2005-02-09
JP2005-032549 2005-02-09
JP2005032549 2005-02-09
JP2005-032548 2005-02-09

Publications (1)

Publication Number Publication Date
WO2006085492A1 true WO2006085492A1 (fr) 2006-08-17

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WO (1) WO2006085492A1 (fr)

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JP2007294839A (ja) * 2006-03-31 2007-11-08 Murata Mfg Co Ltd 積層コンデンサ及び積層コンデンサの実装構造
JPWO2008155916A1 (ja) * 2007-06-21 2010-08-26 パナソニック株式会社 静電気対策部品およびその製造方法
WO2010107059A1 (fr) * 2009-03-19 2010-09-23 昭和電工株式会社 Composition pour remplissage d'entrefer de décharge et protecteur contre les décharges électrostatiques
WO2014162987A1 (fr) * 2013-04-04 2014-10-09 ローム株式会社 Composant de puce composite, ensemble circuit, et appareil électronique
JP2015164170A (ja) * 2014-01-08 2015-09-10 ローム株式会社 チップ部品およびその製造方法、ならびに当該チップ部品を備えた回路アセンブリおよび電子機器
JP2018037634A (ja) * 2016-08-30 2018-03-08 サムソン エレクトロ−メカニックス カンパニーリミテッド． 抵抗素子及び抵抗素子アセンブリ
KR20180025067A (ko) * 2016-08-30 2018-03-08 삼성전기주식회사 저항 소자 및 저항 소자 어셈블리
JP2018082182A (ja) * 2012-09-27 2018-05-24 ローム株式会社 チップダイオードおよびその製造方法

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JPH0645109A (ja) * 1992-07-21 1994-02-18 Murata Mfg Co Ltd 積層型チップバリスタ
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JPS57107290U (fr) * 1980-12-23 1982-07-02
JPS607705A (ja) * 1983-06-28 1985-01-16 松下電器産業株式会社 複合機能素子の製造方法
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JPH0514103A (ja) * 1991-06-27 1993-01-22 Murata Mfg Co Ltd ノイズフイルタ
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Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294839A (ja) * 2006-03-31 2007-11-08 Murata Mfg Co Ltd 積層コンデンサ及び積層コンデンサの実装構造
JPWO2008155916A1 (ja) * 2007-06-21 2010-08-26 パナソニック株式会社 静電気対策部品およびその製造方法
JP4697306B2 (ja) * 2007-06-21 2011-06-08 パナソニック株式会社 静電気対策部品およびその製造方法
WO2010107059A1 (fr) * 2009-03-19 2010-09-23 昭和電工株式会社 Composition pour remplissage d'entrefer de décharge et protecteur contre les décharges électrostatiques
CN102356526A (zh) * 2009-03-19 2012-02-15 昭和电工株式会社 放电间隙填充用组合物和静电放电保护体
KR101276985B1 (ko) 2009-03-19 2013-06-24 쇼와 덴코 가부시키가이샤 방전 갭 충전용 조성물 및 정전 방전 보호체
JP5400134B2 (ja) * 2009-03-19 2014-01-29 昭和電工株式会社 放電ギャップ充填用組成物および静電放電保護体
JP2018082182A (ja) * 2012-09-27 2018-05-24 ローム株式会社 チップダイオードおよびその製造方法
US10903373B2 (en) 2012-09-27 2021-01-26 Rohm Co., Ltd. Chip diode and method for manufacturing same
JP2019153802A (ja) * 2013-04-04 2019-09-12 ローム株式会社 複合チップ部品、回路アセンブリおよび電子機器
US20160050760A1 (en) * 2013-04-04 2016-02-18 Rohm Co., Ltd. Composite chip component, circuit assembly and electronic apparatus
JPWO2014162987A1 (ja) * 2013-04-04 2017-02-16 ローム株式会社 複合チップ部品、回路アセンブリおよび電子機器
WO2014162987A1 (fr) * 2013-04-04 2014-10-09 ローム株式会社 Composant de puce composite, ensemble circuit, et appareil électronique
US10681815B2 (en) 2013-04-04 2020-06-09 Rohm Co., Ltd. Composite chip component, circuit assembly and electronic apparatus
CN105103245A (zh) * 2013-04-04 2015-11-25 罗姆股份有限公司 复合芯片构件、电路组件及电子设备
US10321570B2 (en) 2013-04-04 2019-06-11 Rohm Co., Ltd. Composite chip component, circuit assembly and electronic apparatus
US20190200458A1 (en) * 2013-04-04 2019-06-27 Rohm Co., Ltd. Composite chip component, circuit assembly and electronic apparatus
CN110070970A (zh) * 2013-04-04 2019-07-30 罗姆股份有限公司 芯片构件、电路组件及电子设备
US10468362B2 (en) 2014-01-08 2019-11-05 Rohm Co., Ltd. Chip parts and method for manufacturing the same, circuit assembly having the chip parts and electronic device
JP2015164170A (ja) * 2014-01-08 2015-09-10 ローム株式会社 チップ部品およびその製造方法、ならびに当該チップ部品を備えた回路アセンブリおよび電子機器
US10867945B2 (en) 2014-01-08 2020-12-15 Rohm Co., Ltd. Chip parts and method for manufacturing the same, circuit assembly having the chip parts and electronic device
KR20180025067A (ko) * 2016-08-30 2018-03-08 삼성전기주식회사 저항 소자 및 저항 소자 어셈블리
JP2018037634A (ja) * 2016-08-30 2018-03-08 サムソン エレクトロ−メカニックス カンパニーリミテッド． 抵抗素子及び抵抗素子アセンブリ
JP7144111B2 (ja) 2016-08-30 2022-09-29 サムソン エレクトロ－メカニックス カンパニーリミテッド． 抵抗素子及び抵抗素子アセンブリ
KR102527713B1 (ko) * 2016-08-30 2023-05-03 삼성전기주식회사 저항 소자 및 저항 소자 어셈블리

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