WO2006070629A1 - 研磨用パッド - Google Patents

研磨用パッド Download PDF

Info

Publication number
WO2006070629A1
WO2006070629A1 PCT/JP2005/023255 JP2005023255W WO2006070629A1 WO 2006070629 A1 WO2006070629 A1 WO 2006070629A1 JP 2005023255 W JP2005023255 W JP 2005023255W WO 2006070629 A1 WO2006070629 A1 WO 2006070629A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
groove
polishing pad
pad
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2005/023255
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Tatsutoshi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inoac Corp
Toho Engineering Co Ltd
Original Assignee
Inoue MTP KK
Inoac Corp
Toho Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inoue MTP KK, Inoac Corp, Toho Engineering Co Ltd filed Critical Inoue MTP KK
Priority to US11/813,141 priority Critical patent/US7867066B2/en
Publication of WO2006070629A1 publication Critical patent/WO2006070629A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Definitions

  • the present invention relates to a polishing pad, and more particularly to a polishing pad used for polishing a surface of an object to be processed that requires extremely high processing accuracy, such as a semiconductor wafer, a semiconductor substrate, and a glass substrate. It is about a pad.
  • CMP method Chemical Mechanical Polishing
  • the CMP method generally uses a thin disc-shaped polishing pad made of a synthetic resin material or foamed material, and supplies a slurry consisting of fine particles and liquid between the wafer (semiconductor substrate) and the polishing pad while polishing. Polishing is performed by rotating the pad and wafer relatively.
  • polishing accuracy is required for polishing with high abilities. Further, the demand for improving the polishing accuracy in the CMP method has become stronger along with the securing of the polishing efficiency, particularly with the recent increase in the density of semiconductor devices.
  • polishing pad In order to ensure a high level of polishing accuracy and flattening capability, it is widely known that a certain degree of elasticity is required for the polishing pad depending on the material of the pad and wafer, the required polishing accuracy, and the like. It has been. In other words, by imparting elasticity to the polishing pad, it becomes possible to follow the surface of the polishing pad along the irregularities of the wafer surface, thereby improving the polishing accuracy.
  • the surface to be polished (processed surface) is required to be hard for the purpose of ensuring the durability and polishing efficiency of the polishing pad, so that the polishing pad should be given sufficient elasticity. Was difficult. In short, it has been difficult to achieve both “polishing accuracy” and “polishing efficiency” that are sufficient to meet the requirements with a conventional polishing pad. It is.
  • this multi-layer polishing pad has a back layer made of an elastic material such as a compressed fiber material impregnated with a resin against a surface layer formed of a hard material capable of realizing physical properties required for a processed surface. It is a multi-layered structure. In other words, both the “polishing accuracy” and the “polishing efficiency” can be achieved by ensuring the polishing efficiency by the surface while ensuring the elasticity by the back layer.
  • Patent Document 2 Japanese Patent Laid-Open No. 2001-18165 discloses that a single-layered polishing pad made of a single material has a linear shape on the back surface in order to compensate for elasticity that tends to be insufficient.
  • a groove-shaped one has been proposed.
  • the elasticity can be mechanically improved by the groove on the back surface of the pad, it is possible to improve the polishing accuracy by imparting elasticity while maintaining the polishing efficiency on the pad surface. .
  • manufacturing problems such as a multi-layered polishing pad and delamination problems are avoided.
  • the conventional polishing pad described in Patent Document 2 has the following problems (1) to (4).
  • Patent Document 1 Japanese Patent Laid-Open No. 11 156701
  • Patent Document 2 Japanese Patent Laid-Open No. 2001-18165
  • An object of the present invention is to provide a polishing pad having a novel structure.
  • the invention described in claim 2 of the present invention has an object to particularly effectively solve the above (Problem 3) and (Problem 4).
  • the groove is formed not only on the back surface of the polishing pad substrate but also on the front surface.
  • the elasticity of the polishing pad can be improved. Therefore, it is possible to improve the polishing accuracy by elasticity while ensuring good polishing efficiency by the hardness of the pad substrate material itself.
  • the surface groove without significantly increasing or enlarging the groove on the back surface can improve the elasticity of the polishing pad, it is possible to advantageously secure a fixed area to the rotating platen or the like on the back surface. .
  • both the front and back surfaces are formed at the same cross-sectional shape and the same radial interval. This groove processing can be performed under substantially the same conditions. Therefore, the polishing pad can be processed efficiently by a simple apparatus structure and operation control, and the processing apparatus can be easily managed.
  • the polishing pad according to claim 1 since the concave groove formed on the back surface is an annular concave groove, the polishing pad is attached to a mounting surface such as a rotating platen in the polishing apparatus.
  • the recessed groove on the back side is a substantially sealed space that is closed to the external space that does not open to the outer peripheral surface of the pad. Therefore, even if a polishing liquid (slurry) is supplied to the pad surface during polishing, entry between the back surface of the polishing pad and the mounting surface such as the rotating platen is effectively prevented. As a result, it is possible to effectively prevent the polishing pad from dropping off or being displaced from the polishing apparatus due to the intrusion of the polishing liquid.
  • both surfaces including the front and back concave grooves can be arbitrarily used.
  • a polishing pad can be realized. According to such a polishing pad, it becomes possible to completely avoid a processing defect caused by improperly attaching the front and back to the polishing apparatus, and when the front and back of the polishing pad must be determined. In comparison, the labor burden on the operator can be greatly reduced.
  • the front and back annular grooves are good if the radial pitch or the radial interval between adjacent annular grooves is the same. The annular grooves need not be formed at the same position.
  • the front-side annular groove and the back-side annular groove may be formed at positions shifted from each other by a predetermined distance in the radial direction. Even if the positions of the annular concave grooves on both the front and back surfaces are the same or shifted in the radial direction, the effect of the invention described in claim 1 as described above can be effectively exhibited.
  • the invention according to claim 2 of the present invention has a thin disk shape, and is attached to the polishing apparatus by being fixed to the support surface on the back surface, and the surface of the semiconductor wafer or the like is mounted.
  • a polishing pad that applies a polishing action to a workpiece, and forms a plurality of annular concave grooves extending concentrically around a central axis with respect to the back surface, while being parallel to the surface. It is characterized in that a plurality of straight grooves extending in the direction are formed in at least one direction.
  • the polishing pad according to claim 2 is clearly identified by visual recognition.
  • By forming grooves with the shape to be formed on the front and back surfaces respectively it is possible to efficiently discriminate between the front and the back when attaching the polishing pad to the polishing apparatus and improve the work efficiency. It is possible to more easily and more reliably avoid the occurrence of problems such as a mistake in the front and back during installation.
  • the invention according to claim 3 of the present invention has a thin disk shape, and is attached to the polishing apparatus by being fixed to the support surface on the back surface.
  • a polishing pad for polishing an object to be processed wherein a plurality of back-side annular grooves extending concentrically around a central axis are formed at predetermined radial intervals on the back surface, A plurality of front-side annular grooves extending concentrically around the central axis with respect to the surface are formed at predetermined radial intervals, and one of the back-side annular grooves and the front-side annular grooves is formed.
  • One or a plurality of the other annular grooves are located between the radial directions of the two.
  • the polishing efficiency is satisfactorily secured by the grooves formed on both the front and back surfaces as in the invention described in claim 1.
  • the back-side annular groove is used for polishing.
  • the elasticity imparted to the surface can be exhibited more advantageously on the surface, and further improvement in polishing accuracy can be realized.
  • the invention described in claim 4 of the present invention is the polishing pad according to the invention of claim 3, wherein the front side annular groove is the same constant radial direction as the back side annular groove. It is characterized in that it is formed at intervals and the front side annular groove is located at a substantially central portion between the radial directions of the back side annular groove.
  • Such a polishing pad having a structure according to the invention described in claim 4 is arranged so that the front side annular groove is located at a substantially central portion between the radial directions of the back side annular groove.
  • the back-side annular groove is positioned on the back side of the portion of the surface that is brought into contact with the workpiece. Therefore, the load in the thickness direction of the polishing pad When squeezed, shear deformation occurs in the portions located between the radial directions of the respective annular grooves on the front and back sides, and even more effective elasticity can be realized even if the material of the polishing pad is the same.
  • the invention according to claim 5 of the present invention is characterized in that the structure according to claim 1 is employed in the polishing pad according to the invention according to claim 4.
  • the invention according to claim 6 of the present invention is the polishing pad according to the invention of claim 3, wherein the back-side annular groove has a smaller radial distance than the front-side annular groove. It is characterized by being formed with a gap.
  • the back-side annular groove is formed at a smaller radial interval than the front-side annular groove. It is possible to more advantageously realize the elasticity imparted to the polishing pad by the annular concave groove, and it is possible to perform a highly accurate polishing process with excellent uniformity and flatness.
  • the groove on the back side which has a small effect on the polishing performance and the like, has a small radial interval compared to the surface that has a large effect on the polishing accuracy and polishing performance, while ensuring the polishing performance advantageously. This makes it possible to further improve the impact.
  • the invention according to claim 7 of the present invention is the same as the polishing pad according to any one of claims 3 to 6, wherein the back-side annular groove and the front-side annular
  • the total value of the depth dimension of one annular groove of the groove and the depth dimension of the other annular groove positioned between the radial directions of the one annular groove is the total of the pad. It is characterized by being larger than the thickness dimension.
  • the free surface area given by the inner surfaces of the front and back concave grooves can be set larger. Therefore, it is possible to further improve the elasticity while using the same polishing pad material.
  • the depth dimension of the back-side annular groove and the front-side annular is smaller than the thickness of the entire pad.
  • Such a polishing pad having a structure according to the present invention described in this claim is specially considered with respect to the position and size of the back side annular groove and the front side groove. It can be designed with a great degree of freedom. Therefore, it is easy to achieve both the improvement in elasticity realized by the groove on the back side and the polishing performance such as polishing accuracy and flatness realized by the groove on the front side.
  • the invention according to claim 9 of the present invention has a thin disk shape, and is attached to the polishing apparatus by being fixed to the support surface on the back surface, and the surface of the semiconductor wafer or the like is mounted on the surface.
  • a plurality of back-side annular grooves extending concentrically around the central axis are formed on the back surface, and the plurality of back-side annular grooves are formed.
  • the inner peripheral surface and the outer peripheral surface are inclined recesses extending over the entire circumference in the circumferential direction with a substantially constant cross-sectional shape that is inclined in parallel with a substantially constant inclination angle with respect to the central axis. It is characterized by having a groove.
  • the back-side annular groove is an inclined groove so that the polishing pad is subjected to an external load in the thickness direction of the polishing pad. It is possible to give a shearing component to the deformation generated in the film. Thereby, the elasticity of the polishing pad can be improved more advantageously. Also, since the back-side annular groove is annular, even if shearing elastic deformation occurs, the deformation direction is balanced as a whole. Therefore, it is possible to suppress the polishing surface from being deformed into a strain in a specific direction, and it is possible to maintain stable polishing surface accuracy while achieving good elasticity.
  • the invention described in claim 10 of the present invention is that the structure according to any one of claims 1 to 7 is adopted in the polishing pad according to the invention of claim 9. This is a feature.
  • the invention described in claim 11 of the present invention has a thin disk shape, and is attached to the polishing apparatus by being fixed to the support surface on the back surface, and the surface of the semiconductor wafer or the like is mounted on the surface.
  • a plurality of annular grooves are formed concentrically extending around the central axis, while a plurality of front grooves are formed on the surface, and the inner surfaces of both side walls are substantially parallel to each other. It is characterized by the fact that it is an inclined concave groove that is inclined.
  • the grooves formed on both the front and back surfaces can improve the polishing accuracy based on appropriate elasticity while ensuring good polishing efficiency, and can be mounted on the polishing apparatus.
  • the polishing liquid can be prevented from entering the surface (back surface).
  • the front-side concave groove is an inclined groove
  • the deformation is caused to occur in the polishing pad in response to an external load in the thickness direction of the polishing pad. It becomes possible to have an ingredient. Thereby, the elasticity of the polishing pad can be advantageously improved further.
  • the invention described in claim 12 of the present invention employs the configuration according to any one of claims 1 to 10 in the polishing pad according to the invention described in claim 11. Is a feature.
  • the invention described in claim 13 of the present invention is the polishing pad according to any one of claims 1 to 12, wherein the plurality of annular recesses formed on the back surface is provided.
  • the polishing pad having the structure according to the invention described in claim 13, by setting each dimension of the annular groove formed in the back surface within the above range, the polishing pad can be used. It is possible to more effectively improve the elasticity required for the polishing pad while securing a fixed area during mounting.
  • the polishing pad having the structure according to claims 1, 8, 9 and 13 of the present invention has the problem (problem in the above-mentioned prior art).
  • Point 2 (Problem 4) It can be solved.
  • FIG. 1 is a plan view showing a polishing pad as one embodiment of the present invention.
  • FIG. 2 is a longitudinal sectional view showing a state where the polishing pad shown in FIG. 1 is attached to a polishing apparatus.
  • FIG. 3 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 4 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 5 is a plan view showing a polishing pad as one embodiment of the present invention.
  • FIG. 6 is a bottom view of the polishing pad shown in FIG. 5.
  • FIG. 7 is a longitudinal sectional view showing a state where the polishing pad shown in FIG. 5 is attached to the polishing apparatus.
  • FIG. 8 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 9 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 10 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 11 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 12 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 13 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 14 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 15 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 16 is a plan view showing a polishing pad as one embodiment of the present invention.
  • FIG. 17 is a bottom view of the polishing pad shown in FIG. 16.
  • FIG. 18 is a longitudinal sectional view showing a state in which the polishing pad shown in FIG. 16 is attached to the polishing apparatus.
  • FIG. 19] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 20] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 21] A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 22 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 23] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 24] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 25 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 26 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 27 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 28 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 29 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 30 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 31 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 32] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 33] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 34] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 35] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 36 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • 37] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 38] A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 39] A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 40 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 41 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 42 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 43 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 44 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 45] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 46] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • Fig. 47] is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 48 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 49 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 50 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 51 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 52 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 53 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 54 is a plan view showing a polishing pad as an embodiment of the present invention.
  • FIG. 55 is a longitudinal sectional view showing a state where the polishing pad shown in FIG. 54 is attached to the polishing apparatus.
  • FIG. 56 is a longitudinal sectional view showing a state where the polishing pad shown in FIG. 54 is attached to the polishing apparatus.
  • FIG. 57 A longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 58 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 59 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 60 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 61 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 62 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 63 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • FIG. 64 is a plan view showing a polishing pad as another embodiment of the present invention.
  • FIG. 65 is a plan view showing a polishing pad as another embodiment of the present invention.
  • FIG. 66 is a plan view showing a polishing pad as another embodiment of the present invention.
  • FIG. 67 is a plan view showing a polishing pad as another embodiment of the present invention.
  • FIG. 68 is a plan view showing a polishing pad as an embodiment of the present invention.
  • FIG. 69 is a longitudinal sectional view showing a state where the polishing pad shown in FIG. 68 is attached to the polishing apparatus.
  • FIG. 70 is a longitudinal sectional view showing a state where the polishing pad shown in FIG. 68 is attached to the polishing apparatus.
  • FIG. 71 is a longitudinal sectional view showing a polishing pad as another embodiment of the present invention.
  • polishing pad 14: front surface, 16: front surface groove, 18: central axis, 20: back surface, 22: back surface groove, 36: front surface groove, 38: back surface groove, 40: inside surface Wall surface, 42: Front outer wall surface, 44: Back inner wall surface, 46: Back outer wall surface, 48: Polishing pad, 50: Polishing groove, 74: Polishing pad, 9 8: Polishing pad, 100: Polishing pad Pad: 110: Polishing pad, 112: Polishing pad BEST MODE FOR CARRYING OUT THE INVENTION
  • FIGS. 1 and 2 show a polishing pad 10 as an embodiment of the present invention described in claims 1 and 13.
  • the polishing pad 10 is formed by a thin disk-shaped pad substrate 12 having a constant thickness dimension: T as a whole.
  • the pad substrate 12 is formed of various appropriate materials including, for example, hard foamed or unfoamed synthetic resin material, hard rubber material, fiber material, inorganic material, and the like. Is formed of urethane foam.
  • the pad thickness dimension is appropriately set according to the material of the wafer to be processed only by the material of the pad substrate 12 that is not limited, the required processing accuracy, and the like.
  • a surface groove 16 as a front-side annular groove extending in the circumferential direction is formed around the central axis 18 of the pad substrate 12 on the surface 14 that is one surface of the pad substrate 12 that exerts force. It is open on the surface 14.
  • the powerful surface concave groove 16 is a plurality of circular grooves each having a center axis 18 as a center of curvature and having different curvature radii. It consists of 16, 16, 16, ....
  • a back surface groove 22 as a back side annular groove extending in the circumferential direction is provided around the central axis 18 of the pad substrate 12. Formed on the back surface 20.
  • the back side concave groove 22 which is strong is in this embodiment. In this case, it is constituted by a large number of circular grooves 22, 22, 22, '"having the same shape as the surface concave groove 16.
  • Pitch Pt and radial pitch of groove 22 on the back surface 22
  • the front surface 14 of the pad substrate 12 in which the front surface concave groove 16 is formed and the rear surface 20 of the pad substrate 12 in which the rear surface concave groove 22 is formed have the same shape. Has been.
  • the specific set values such as the size of each part of the front surface groove 16 and the back surface groove 22 are the material of the pad substrate 12 and the thickness, outer diameter, and the material of the wafer to be polished. It is determined by comprehensively considering the shape and material of the metal wire formed on the wafer and the required polishing accuracy, and is not particularly limited. It is desirable that each value of groove width: Bt, Bb, depth: Dt, Db, radial pitch: Pt, Pb of the back side concave groove 22 is set within the following range.
  • Cover and groove width of front groove 16 and back groove 22 If Bt and Bb are too small, clogging of surface groove 16 due to polishing debris and the like is likely to occur and a stable effect is exhibited. Difficult and table It is difficult to secure sufficient elasticity by the groove 16 on the surface and the groove 22 on the back surface. On the other hand, if the groove widths Bt and Bb of the front concave groove 16 and the rear concave groove 22 are too large, the contact surface pressure with the wafer at the edge portion (opening edge portion) of the front concave groove 16 increases and the biting shape is increased. It is difficult to achieve stable polishing that is likely to cause polishing and the like, and the surface groove 16 and the back surface groove 22 give excessive elasticity, which may lead to a decrease in polishing accuracy.
  • the groove depths Dt and Db of the front surface groove 16 and the back surface groove 22 are too small, the rigidity of the surface 14 of the polishing pad 10 becomes too large and is applied to the polishing pad 10.
  • the surface groove 14 is not effectively exerted on the surface 14 and tends to be difficult to precisely polish, and the surface groove 16 and the back surface groove 22 provide sufficient elasticity to the polishing pad 10. It ’s difficult.
  • the groove depths Dt and Db of the front surface groove 16 and the back surface groove 22 are too large, the surface 14 of the polishing pad 10 that is not only difficult to manufacture is easily deformed, and stick slip is generated. There is also a possibility that polishing is likely to be unstable, and a decrease in polishing accuracy due to excessive elasticity imparted to the polishing pad 10 by the front surface groove 16 and the back surface groove 22 is likely to be a problem.
  • the groove depth of the front surface groove 16 Dt and the groove depth of the back surface groove 22: the total value of Db (Dt + Db) force
  • the thickness dimension of the pad substrate 12 T Has been smaller than.
  • the value of the thickness dimension T of the pad substrate 12 is set within the following range.
  • the polishing pad 10 having such a front surface 14 and a back surface 20 is the same as the conventional one. And used for polishing wafers and the like. Specifically, as shown in FIG. 3, for example, a means such as negative pressure suction by air or adhesion by double-sided tape is placed on the support surface of the rotating plate (support plate) 24 of the polishing apparatus. And fixed to the rotating plate. Then, the wafer 26 is superposed on the surface 14 while being driven to rotate around the central axis 18, so that it is subjected to a polishing process.
  • a means such as negative pressure suction by air or adhesion by double-sided tape is placed on the support surface of the rotating plate (support plate) 24 of the polishing apparatus. And fixed to the rotating plate.
  • the wafer 26 is superposed on the surface 14 while being driven to rotate around the central axis 18, so that it is subjected to a polishing process.
  • a polishing liquid (slurry) 30 is generally supplied between the opposed surfaces of the surface 14 of the polishing pad 10 and the surface 28 to be coated of the wafer 26 as in the prior art.
  • the wafer itself is driven to rotate around its central axis.
  • the polishing liquid 30 is supplied from, for example, the central portion of the polishing pad 10 to the surface 14 of the polishing pad 10, and the polishing pad 10 is subjected to a centrifugal force caused by rotation around the central axis 18 of the polishing pad 10. It is made to spread on the surface.
  • the elasticity of the polishing pad 10 can be improved. Therefore, it is possible to improve the polishing accuracy by elasticity while ensuring good polishing efficiency due to the hardness of the material of the node substrate 12 itself.
  • the front surface groove 16 formed on the front surface 14 and the back surface groove 22 formed on the back surface 20 are formed in the same number in the same cross-sectional shape and the same radial interval. Compared to the case where the shape of the groove on the front surface and the groove on the back surface is different, the groove force can be easily measured, and maintenance and management such as maintenance of the processing apparatus can be simplified.
  • both the front surface 14 and the back surface 20 are processed. It can be used as a surface (polishing surface), and when the polishing pad 10 is placed on the support surface of the rotating plate (support plate) 24 of the polishing apparatus, it is not necessary to confirm the front and back. Therefore, it is possible to easily attach the polishing pad 10 capable of realizing high-precision polishing, and it is possible to prevent the wrong attachment of the front and back surfaces, thereby enabling reliable attachment.
  • the back-side recessed groove 22 into an annular groove extending in the circumferential direction, it is possible to advantageously prevent the polishing liquid 30 supplied to the front surface 14 side from entering the back surface 20 side along the outer peripheral surface. Can do. Therefore, the polishing pad 10 may fall off from the rotating plate 24 of the polishing apparatus due to the polishing liquid 30 entering between the opposite surfaces of the back surface 20 and the supporting surface of the rotating plate 24, or on the rotating plate. It is possible to prevent problems such as displacement, and to perform polishing with high reliability.
  • the total depth (Dt + Db) of the groove depth Dt of the front surface groove 16 and the groove depth Db of the back surface groove 22 is smaller than the thickness dimension of the pad substrate 12.
  • FIGS. 3 and 4 show polishing pads 32 and 34 as another embodiment of the present invention described in claims 1, 9, 10, 11, 12, and 13. .
  • members or parts that are substantially the same as those of the above-described embodiment are denoted by the same reference numerals in the drawings, and the description thereof is omitted.
  • the surface 14 of the pad substrate 12 forming the polishing pads 32, 34 is a surface as a front-side annular groove formed by a number of circular grooves concentrically extending in the circumferential direction.
  • a concave groove 36 is formed, and a back surface concave groove 38 is formed on the back surface 20 of the pad substrate 12 as a back-side annular concave groove constituted by a large number of circular grooves concentrically extending in the circumferential direction. ing.
  • the surface concave groove 36 is formed by an inclined groove that is inclined at a constant angle with respect to the central axis 18 of the pad substrate.
  • the inner peripheral side wall surface of the surface groove 36 (hereinafter referred to as “surface inner wall surface”) 40 and the outer peripheral side wall surface of the surface groove 36 (hereinafter referred to as “surface outer wall surface”). 42) are inclined surfaces inclined at a predetermined angle: ct t with respect to the central axis 18.
  • the inner surface wall 40 and the outer surface wall 42 are parallel to each other, and the entire surface concave groove 36 is not only in the circumferential direction but also in the depth direction.
  • the surface concave groove 36 is gradually separated from the central axis 18 toward the outer peripheral side as it goes to the opening.
  • the surface concave groove 36 is gradually formed on the central axis 18 as it goes to the opening.
  • the pad substrate 12 is opened toward the inside of the pad substrate 12 obliquely in the radial direction.
  • the back concave groove 38 is also formed by an inclined groove that is inclined at a constant angle with respect to the central axis of the pad substrate.
  • All of 46 are inclined surfaces inclined by a predetermined angle: ct b with respect to the central axis 18.
  • the back groove 38 in the present embodiment is such that the back inner wall surface 44 and the back outer wall surface 46 are parallel to each other, and not only in the circumferential direction but also in the depth direction of the back groove 38.
  • the back side concave groove 38 gradually increases toward the central axis as it goes to the opening.
  • the back surface concave groove 38 has an opening that is spaced apart from the outer periphery 18 and opened outward in the radial direction of the pad substrate 12. As it goes to the part, it gradually approaches the central axis 18 and opens toward the inner side of the pad substrate 12 in the radial direction.
  • the front and back grooves 36 and 38 have the same shape and are formed on the front surface 14 and the back surface 20 respectively. Thereby, in the polishing pads 32 and 34 in the present embodiment, the front surface 14 and the back surface 20 have the same shape.
  • Specific set values such as the size of each part of the front surface groove 36 and the back surface groove 38 are the material of the pad substrate 12 and the thickness, outer diameter, and the material of the wafer to be polished. It is determined by comprehensively considering the shape and material of the metal wire formed on the wafer and the required polishing accuracy, and is not particularly limited.
  • the values of groove width: Bt, Bb, depth: Dt, Db, radial pitch: Pt, Pb of backside groove 38 should be set within the following ranges.
  • the polishing pads 32 and 34 are given sufficient elasticity. May not be able to perform as expected.
  • the angle of inclination of the inner and outer wall surfaces 40 and 42 (back inner and outer wall surfaces 4 4 and 46) is too large, the surface groove 36 (back groove 38) that only makes it difficult to manufacture. There is a risk that the strength of the side wall portion of the steel will decrease and the surface pressure distribution will be difficult to stabilize, and it will be difficult to obtain sufficient durability of the polishing pads 32 and 34.
  • polishing pads 32 and 34 having the structure according to the present embodiment (Problem 1), (Problem 2), and (Problem 4) in the problems of the prior art described above are obtained.
  • the surface groove 36 and the back groove 38 are formed by the inclined grooves inclined with respect to the central axis 18, so that the polishing pads 32, 34 can be Ratio A relatively large elasticity can be advantageously imparted.
  • FIGS. 5 to 7 show a polishing pad 48 according to an embodiment of the present invention described in claims 2 and 13.
  • the polishing pad 48 is formed of a thin disk-shaped pad substrate 12 having a constant thickness dimension: T as a whole.
  • the pad substrate 12 is formed of various suitable materials including, for example, hard foamed or unfoamed synthetic resin material, hard rubber material, fiber material, inorganic material, and the like. Is formed of urethane foam.
  • the pad thickness dimension is appropriately set according to the material of the wafer to be processed only by the material of the pad substrate 12 that is not limited, the required processing accuracy, and the like.
  • a large number of grooves 50, 50 extending linearly and parallel to each other in one radial direction are formed on the surface 14 which is one surface of the pad substrate 12 which is applied.
  • 50,..., 50 are formed as surface grooves 50, and are opened in the surface 14.
  • each part of the surface concave groove 50 is not only the material, thickness, and outer diameter of the pad substrate 12, but also the material of the wafer to be polished and the wafer. It is determined by comprehensively considering the shape and material of the metal wire, the required polishing accuracy, etc., and is not particularly limited.
  • the groove width of the surface concave groove 50 Bt , Depth: Dt, Radial pitch: Pt should be set within the following range.
  • the groove depth of the surface concave groove 50: Dt is too small, the rigidity of the surface 14 of the polishing pad 48 becomes too large, and the elasticity imparted to the polishing pad 48 is effective on the surface 14. There is a tendency that precise polishing is difficult without being emitted.
  • the groove depth Dt of the surface groove 50 is too large, excessive elasticity is imparted to the polishing pad 48 by the surface groove 50. Further, while the manufacture becomes difficult, the surface 14 of the polishing pad 48 is likely to be deformed, and there is a risk of the occurrence of stagger slip, and the polishing is likely to be unstable.
  • a back surface concave groove 22 as a back-side annular concave groove constituted by a number of grooves extending in the circumferential direction is provided as a central axis 18 of the pad substrate. Is formed with the center of curvature at the back surface 20.
  • the energized back surface concave groove 22 has a large number of circular grooves 22, each having a central axis 18 as a center of curvature and having different curvature radii. Consists of 22, 22, ⁇ ⁇ •.
  • each part of the back-side recessed groove 22 is also formed on the material of the wafer to be polished and the wafer in addition to the material, thickness, and outer diameter of the pad substrate 12. In general, it is determined in consideration of the shape and material of the metal wire and the required polishing accuracy, and is not particularly limited. : Each value of Bb, depth: Db, radial pitch: Pb is preferably set within the following range.
  • the groove width: Bb or groove depth: Db of the back-side groove 22 is too small, it will be difficult to give sufficient elasticity to the polishing pad 46, and the desired polishing accuracy will be improved. It is difficult to realize. On the other hand, if the groove width: Bb or groove depth: Db of the back-side recessed groove 22 is too large, the elasticity exerted on the surface 14 of the polishing pad 48 becomes larger than necessary, leading to a decrease in polishing accuracy. There is it.
  • the pitch Pb in the radial direction of the back groove 22 is too small, damage that is difficult to manufacture is likely to occur, and stable polishing is difficult to achieve.
  • the radial pitch of the back groove 22 When Pb is too large, the number of circular grooves 22, 22, 22,. The elasticity varies greatly depending on the radial position of the polishing pad 48, making it difficult to perform uniform polishing efficiently.
  • the bottom surfaces of the front surface concave groove 50 and the back surface concave groove 22 may be any of a curved surface, a flat surface, etc., which are not limited in shape or the like.
  • the bottom surfaces of the groove 50 and the back surface recessed groove 22 are flat surfaces orthogonal to the central axis 18 of the polishing pad 48. In this way, when the bottom surfaces of the front and back grooves 50 and 22 are flat surfaces substantially parallel to the surface of the polishing pad 48, the effective depths of the front and rear grooves 50 and 22 are set large. Even in this case, it is possible to advantageously secure a gap between the bottom wall portions of the front surface groove 50 and the back surface groove 22 to obtain good strength characteristics.
  • the groove depth of the front surface groove 50 Dt and the groove depth of the back surface groove 22: total value of Db (Dt + Db) force
  • the thickness dimension of the pad substrate 12 T Has been smaller than.
  • the value of the thickness dimension T of the pad substrate 12 is set within the following range.
  • the polishing pad 48 having the front surface 14 and the back surface 20 is used for polishing a wafer or the like in the same manner as in the prior art.
  • a means for mounting on the support surface of the rotating plate (support plate) 24 of the polishing apparatus and sucking negative pressure with air or bonding with double-sided tape is used. And fixed to the rotating plate 24. Then, the wafer 26 is superposed on the surface 14 while being rotated around the central axis 18, so that it is subjected to a polishing process.
  • a polishing liquid (slurry) 30 is generally supplied between the opposing surfaces of the surface 14 of the polishing pad 48 and the processing surface 28 of the wafer 26 as in the prior art.
  • the wafer 26 itself can also be driven to rotate around its central axis.
  • the polishing liquid 30 is supplied to the surface of the polishing pad 48 from the central portion of the polishing pad 48, for example, and is applied to the polishing pad 48 by the action of centrifugal force accompanying rotation around the central axis 18 of the polishing pad 48. It is made to spread on the surface.
  • the polishing pad 48 having the structure according to this embodiment effectively solves (Problem 1), (Problem 3), and (Problem 4) in the above-mentioned problems of the prior art. can do.
  • the front surface concave groove 50 formed on the front surface 14 is formed so as to extend linearly, while the rear surface concave groove 22 formed on the rear surface 20 extends in the circumferential direction. It is formed as follows. Therefore, the shape of the front surface 14 and the rear surface 20 of the polishing pad 48 is remarkably different, and the front surface 14 and the rear surface 20 can be easily distinguished by visual recognition. Accordingly, when attaching the polishing pad 48 to the polishing apparatus, it is possible to avoid the problem of mistaking the front and back and to attach the polishing pad 48 securely.
  • the back surface concave groove 22 into an annular groove extending in the circumferential direction, it is possible to advantageously prevent the polishing liquid 30 supplied to the front surface 14 side from entering the back surface 20 side along the outer peripheral surface. Can do. Therefore, the polishing liquid 30 enters between the opposite surfaces of the back surface 20 and the support surface of the rotating plate 24. Therefore, it is possible to prevent the occurrence of problems such as the polishing pad 48 falling off the rotating plate 24 of the polishing apparatus or being displaced on the rotating plate 24, and polishing processing can be performed with high reliability. It becomes possible.
  • the total depth (Dt + Db) of the groove depth Dt of the front surface groove 50 and the groove depth Db of the back surface groove 22 is smaller than the thickness dimension of the pad substrate 12.
  • FIGS. 8 and 9 show polishing pads 52 and 54 according to another embodiment of the present invention as set forth in claims 2, 9, 10, and 13.
  • the same members or parts as those of the above-described embodiment are denoted by the same reference numerals in the drawings and description thereof is omitted.
  • the surface 14 which is one surface of the pad substrate 12 is provided with surface concave grooves 50 formed by a number of grooves linearly extending in one radial direction. Is open.
  • the back surface groove 20 extending in the circumferential direction is formed on the back surface 20 which is the other surface of the pad substrate 12.
  • the pad substrate 12 is formed around the central axis 18 and is opened on the back surface 20.
  • the concave groove 38 is formed by a large number of circular grooves 38, 38, 38,... Concentrically formed with the central axis 18 as the center of curvature.
  • the back surface concave groove 38 is formed by an inclined groove that is inclined at a constant angle with respect to the central axis of the pad substrate.
  • the inner peripheral side wall surface (hereinafter referred to as “back inner wall surface”) 44 of the back surface concave groove 38 and the outer peripheral side wall surface of the rear surface concave groove 38 (hereinafter referred to as “back outer wall surface”). 46 are all inclined surfaces inclined at a predetermined angle: b with respect to the central axis 18.
  • the back surface concave groove 38 in the present embodiment is such that the back surface inner wall surface 44 and the back surface outer wall surface 46 are parallel to each other.
  • the entire back groove 38 has a substantially constant width dimension: Bb.
  • Bb width dimension
  • the concave groove 38 on the back surface gradually opens away from the central axis 18 toward the outer periphery as it goes to the opening, and is opened outward in the radial direction of the node substrate 12, while FIG.
  • the energetic back surface concave groove 38 gradually approaches the central axis 18 as it goes to the opening, and is opened toward the radially inward direction of the pad substrate 12. Yes.
  • the specific set values such as the dimensions of each part of the back groove 38 are also formed on the material of the wafer to be polished and the wafer. In general, it is determined by comprehensively considering the shape and material of the metal wire and the required polishing accuracy, and is not particularly limited. : Bb, Depth: Db, Radial Pitch: Pb values should be set within the following ranges.
  • the inclination angle of the inner and outer wall surfaces 44 and 46 on the back surface is too small. If b is too small, the polishing pads 52 and 54 cannot be given sufficient elasticity, and the expected performance may not be exhibited. There is. On the other hand, if the angle of inclination of the inner walls 44, 46 on the back surface is too large, not only will it be difficult to manufacture, but the strength of the side wall portion of the back groove 38 will decrease, making it difficult to stabilize the surface pressure distribution. In addition, the durability of the polishing pads 52 and 54 may not be sufficiently obtained. [0116] In the polishing pads 52 and 54 having the structure according to this embodiment, (Problem 1), (Problem 2), (Problem 3), (Problem 4) can be solved effectively.
  • FIGS. 10 and 11 show polishing pads 56 and 58 as another embodiment of the present invention described in claims 2, 11, 12 and 13.
  • the same members or parts as those of the above-described embodiment are denoted by the same reference numerals in the drawings, and the description thereof is omitted.
  • the surface 14 which is one surface of the pad substrate 12 is provided with a surface concave groove 60 formed by a number of grooves extending linearly in one radial direction. Is open.
  • the surface concave groove 60 is formed by an inclined groove that is inclined at a constant angle with respect to the central axis of the pad substrate 12 (a straight line parallel to the central axis 18). .
  • the surface inner wall surface 62 and the surface outer wall surface 64 are parallel to each other, and not only in the circumferential direction but also in the depth direction of the surface groove 60
  • the groove 60 has a substantially constant width dimension: Bt.
  • the surface groove 60 gradually increases from the central axis 18 toward the opening.
  • the surface groove 60 is opened to the outer peripheral side and is opened toward the diagonally outward in the radial direction of the pad substrate 12. As it goes to the part, it gradually approaches the central axis 18 and opens toward the radially inner side of the pad substrate 12.
  • each part of the surface groove 60 is not only the material, thickness, and outer diameter of the pad substrate 12, but also the material of the wafer to be polished and the wafer. It is determined in consideration of the shape and material of the metal wire and the required polishing accuracy, and is not particularly limited.
  • the groove width of the surface concave groove 60 Bt , Depth: Dt, Radial Pitch: Pt, Inclination Angle: at values should be set within the following ranges.
  • Cover and inclination angle of inner and outer wall surfaces 62, 64 If at is too small, the polishing pads 56, 58 may not be given sufficient elasticity, and the expected performance may not be achieved. There is. On the other hand, if the angle of inclination of the inner and outer wall surfaces 62 and 64: at is too large, the strength of the side wall portion of the surface concave groove 60 is reduced as well as the manufacturing becomes difficult, and the surface pressure distribution becomes difficult to stabilize. The durability of the polishing pads 56 and 58 may not be sufficiently obtained.
  • the back surface 20 which is the other surface of the pad substrate 12 has a back surface concave formed by a number of circular grooves 22, 22, 22... Extending in the circumferential direction with the central axis 18 as the center of curvature.
  • a groove 22 is formed around the central axis 18 of the pad substrate, and is opened in the back surface 20.
  • FIGS. 12 to 15 show polishing pads 66, 68, 70, 72 according to another embodiment of the present invention described in claims 2, 9, 10, 11, 12, and 13. It is shown.
  • the same members or parts as those of the above-described embodiment are designated by the same reference numerals in the drawings, and the description thereof is omitted.
  • the polishing pads 66, 68, 70, 72 have the same radial direction on the surface 14.
  • the back surface groove 60 is formed of a large number of inclined grooves extending in the circumferential direction on the back surface 20 thereof. .
  • the front surface concave groove 60 is formed to open radially outward and the back surface concave groove 38 has a diameter. It is formed so as to open toward the inside of the direction slant.
  • the front surface concave groove 60 is formed so as to open obliquely inward in the radial direction, and the back surface concave groove 38 is formed. Diagonally in the radial direction It is formed to open outward.
  • the front surface concave groove 60 is formed to be opened obliquely outward in the radial direction, and the back surface concave groove 38 is formed. Diagonally in the radial direction It is formed to open outward.
  • the front surface concave groove 60 is formed to open radially inward and the back surface concave groove 38 is formed. It is formed so as to open inward in the radial direction.
  • FIGS. 16 to 18 show a polishing pad 74 according to an embodiment of the present invention described in claims 1, 3, 4, 5, 13.
  • the polishing pad 74 is formed by a thin disk-shaped pad substrate 12 having a constant thickness dimension: T as a whole.
  • the pad substrate 12 is formed of various suitable materials including, for example, hard foamed or unfoamed synthetic resin material, hard rubber material, fiber material, inorganic material, and the like. Is formed of urethane foam. Note that the pad thickness dimension is not limited, and is appropriately set according to the material of the wafer to be processed, which is not limited to the material of the pad substrate 12, and the required processing accuracy.
  • a surface groove 16 as a front-side annular groove formed by a circular groove extending in the circumferential direction has a central axis 1 of the pad substrate 12. It is formed around 8 and is open to the surface 14.
  • the energetic surface ditch 16 has a plurality of circles each having a center axis 18 as a center of curvature and having different radii of curvature. It is made up of shaped grooves 16, 16, 16,.
  • the specific set values such as the dimensions of each part of the surface groove 16 are not only the material, thickness, and outer diameter of the pad substrate 12, but also the material of the wafer to be polished and the wafer. It is determined by comprehensively considering the shape and material of the metal wire and the required polishing accuracy, and is not particularly limited.
  • the groove width of the surface concave groove 16 is: Bt , Depth: Dt, Radial pitch: Pt values should be set within the following ranges.
  • the radial pitch of the surface grooves 16 If Pt is too small, the surface 14 of the polishing node 74 that is difficult to manufacture is prone to deformation and damage, and stable polishing is realized. hard. On the other hand, if the radial pitch Pt of the surface concave grooves 16 is too large, the polishing accuracy and the polishing efficiency may be reduced.
  • a back surface concave groove 22 as a back-side annular groove formed by a circular groove extending in the circumferential direction is a central axis 1 of the pad substrate 12. It is formed around 8 and is opened on the back surface 20.
  • the energized back surface concave groove 22 extends in a number of circles each having a center axis 18 as a center of curvature and having different curvature radii. Consists of shaped grooves 22, 22, 22, ...
  • each part of the back groove 22 is also formed on the material and thickness of the pad substrate 12 as well as the material and thickness of the wafer to be polished. In general, it is determined in consideration of the shape and material of the metal wire and the required polishing accuracy, and is not particularly limited. : Each value of Bb, depth: Db, radial pitch: Pb is preferably set within the following range.
  • the pitch Pb in the radial direction of the back concave grooves 22 is too small, damage that is difficult to produce is likely to occur, and stable polishing is difficult to achieve.
  • the radial pitch of the back groove 22 When Pb is too large, the number of circular grooves 22, 22, 22,. The elasticity varies greatly depending on the radial position of the polishing pad 74, making it difficult to perform uniform polishing efficiently.
  • the bottom surfaces of the front surface concave groove 16 and the back surface concave groove 22 may be any of a curved surface, a flat surface, etc., which are not limited in shape or the like.
  • the bottom surfaces of the groove 16 and the back surface recessed groove 22 are flat surfaces orthogonal to the central axis 18 of the polishing pad 74. In this way, when the bottom surface of the front groove 16 and the back groove 22 is a flat surface substantially parallel to the surface of the polishing pad 74, the effective depth of the front groove 16 and the back groove 22 is set large. Even in this case, it is possible to advantageously secure a gap between the bottom wall portions of the front surface concave groove 16 and the back surface concave groove 22 to obtain good strength characteristics.
  • the total depth of the groove depth Dt of the front surface groove 16 and the groove depth Db of the back surface groove 22 is smaller than the thickness dimension T of the pad substrate 12. ing.
  • the value of the thickness dimension T of the pad substrate 12 is set within the following range.
  • the front surface concave grooves 16 and the rear surface concave grooves 22 are formed in a specific positional relationship with each other.
  • the table between the radial directions of the adjacent back side concave grooves 22, 22 A surface groove 16 is formed on the surface 14 side.
  • a single surface groove 16 is formed on the surface 14 side of the substantially central portion in the radial direction between the back surface grooves 22 and 22 in the radial direction.
  • a single back surface ditch 22 is formed on the back surface 20, so that the front surface ditch 16 and the back surface ditch 22 are padded.
  • the front and back surfaces of the substrate 12 are alternately formed at positions shifted from each other in the radial direction.
  • the polishing pad 74 having the front surface 14 and the back surface 20 is used for polishing a wafer or the like in the same manner as in the prior art.
  • a negative pressure suction by air or a means such as adhesion by a double-sided tape is placed on the support surface of the rotating plate (support plate) 24 of the polishing apparatus. It is fixed to the rotating plate 24 and attached.
  • the wafer 26 is superposed on the surface 14 while being rotated around the central axis 18, so that it is subjected to a polishing process.
  • a polishing liquid (slurry) 30 is generally supplied between the opposed surfaces of the surface 14 of the polishing pad 74 and the work surface 28 of the wafer 26 as in the conventional case.
  • the wafer 26 itself can also be driven to rotate around its central axis.
  • the polishing liquid 30 is supplied to the surface of the polishing pad 74 from the central portion of the polishing pad 74, for example, and is applied to the polishing pad 74 by the action of centrifugal force accompanying the rotation of the polishing pad 74 around the central axis 18. It is made to spread on the surface.
  • the surface 14 of the polishing pad 74 against the work piece, that is, the portion (contact surface) that comes into contact with the object to be polished acts on the contact surface.
  • the applied stress is transmitted downward in the axial direction.
  • the back surface groove 20 is formed on the back surface 20 side of the portion where the contact surface is formed on the front surface 14, and since elasticity is given, it is elastic by the action of stress. It can be deformed and stress can be released. Therefore, it is possible to advantageously exert the elasticity exerted on the front surface 14 by forming the back surface concave groove 22 while ensuring a sufficient fixing area between the back surface 20 and the rotating plate (support plate) 24. Polishing with high flatness and uniformity Processing can be realized.
  • the back-side recessed groove 22 into an annular groove extending in the circumferential direction, it is possible to advantageously prevent the polishing liquid 30 supplied to the front surface 14 side from entering the back surface 20 side along the outer peripheral surface. Can do. Therefore, the polishing pad 74 is peeled off from the rotating plate 24 of the polishing apparatus due to the polishing liquid 30 permeating between the opposite surfaces of the back surface 20 and the support surface of the rotating plate 24, or on the rotating plate 24. Therefore, it is possible to prevent the occurrence of problems such as dislocation, and to perform polishing with high reliability.
  • the total depth (Dt + Db) of the groove depth Dt of the front surface groove 16 and the groove depth Db of the back surface groove 22 is smaller than the thickness dimension of the pad substrate 12.
  • FIGS. 19 and 20 show polishing pads 76 and 78 according to another embodiment of the present invention described in claims 3, 4, 8, 11 to 13: .
  • members or portions that are substantially the same as those of the above-described embodiment are denoted by the same reference numerals in the drawings, and the description thereof is omitted.
  • a large number of circular grooves 36, 36, 36, ⁇ extending concentrically in the circumferential direction with the central axis as the center of curvature.
  • the surface concave groove 36 formed by the above is formed around the central axis 18 of the pad substrate 12 and is opened in the surface 14.
  • the surface concave groove 36 is constituted by an inclined groove inclined at a constant angle with respect to the central axis (a straight line parallel to the central axis 18) of the pad substrate.
  • the surface inner wall surface 40 and the surface outer wall surface 42 are parallel to each other, and the surface groove is not only in the circumferential direction but also in the depth direction of the surface groove 36.
  • Width Bt, which is substantially constant over the whole of 36.
  • the surface concave groove 36 gradually increases from the central axis 18 toward the outer peripheral side as it goes to the opening.
  • the surface groove 36 is formed in the opening while the pad substrate 12 is opened diagonally outward in the radial direction. As it goes, it gradually approaches the central axis 18 and opens toward the inside in the radial direction of the pad substrate 12.
  • the groove width of the surface groove 36 is determined by comprehensively considering the shape and material of the metal wire, the required polishing accuracy, etc., and is not particularly limited.
  • the inclination angle of the inner and outer wall surfaces 40, 42 on the surface is too small. If the t is too small, the polishing pads 76, 78 cannot be given sufficient elasticity, and the desired performance cannot be exhibited. There is a fear. On the other hand, if the angle of inclination of the inner and outer wall surfaces 40, 42 is too large, the strength of the side wall portion of the surface concave groove 36 will decrease as well as the manufacturing becomes difficult, and the surface pressure distribution will be difficult to stabilize. The durability of the polishing pads 76 and 78 may not be sufficiently obtained.
  • a back surface concave groove 22 constituted by a circular groove extending in the circumferential direction is formed around the central axis 18 of the pad substrate. It is open on the back surface 20.
  • the concave groove 22 on the back surface is formed by a large number of circular grooves 22, 22, 22,... Concentrically extending with the central axis as the center of curvature.
  • FIGS. 21 and 22 show polishing pads 80 and 82 as another embodiment of the present invention described in claims 3, 4, 8, 9, 10, and 13. I'm going.
  • the surface 14 which is one surface of the pad substrate 12 has a large number of circular grooves 16, which extend in the circumferential direction with the central axis as the center of curvature and have different curvature radii.
  • a surface concave groove 16 constituted by 16, 16,... Is formed around the central axis 18 of the pad substrate 12 and is opened on the surface 14.
  • a back surface concave groove 38 constituted by a circular groove extending in the circumferential direction is formed around the central axis 18 of the pad substrate. It is open on the back surface 20.
  • the concave groove 38 on the back surface is constituted by a plurality of circular grooves 38, 38, 38,... Concentrically extending with the central axis as the center of curvature.
  • the back surface concave groove 38 is formed by an inclined groove inclined at a constant angle with respect to the center axis 18 (a straight line parallel to the center axis 18) of the pad substrate.
  • a side wall surface on the inner peripheral side of the back groove 38 (hereinafter referred to as “back side inner wall surface”) ) 44 and the outer side wall surface of the rear groove 38 (hereinafter referred to as “back outer wall surface”) 46 are both at a predetermined angle with respect to the central axis 18: at (parallel to the central axis 18) The angle of intersection with the straight line is equal to at).
  • the back surface inner wall surface 44 and the back surface outer wall surface 46 are parallel to each other, and not only in the circumferential direction but also in the depth direction of the back surface recessed groove 38.
  • the groove 38 has a substantially constant width dimension: Bt.
  • the back groove 38 gradually increases from the central axis 18 toward the opening.
  • the back surface recessed groove 38 is applied to the polishing pad 82 shown in FIG. As it goes to the opening, it gradually approaches the central axis 18 and opens toward the radially inner side of the pad substrate 12.
  • the specific set values such as the dimensions of each part of the back surface recessed groove 38 are not only the material, thickness, and outer diameter of the pad substrate 12, but also the material of the wafer to be polished and the wafer. It is determined by comprehensively considering the shape and material of the metal wire, the required polishing accuracy, etc., and is not particularly limited.
  • the groove width of the back groove 38 is: Bb , Depth: Db, Radial pitch: Pb values should be set within the following ranges.
  • FIGS. 23 and 24 show polishing pads 84 and 86 as another embodiment of the present invention described in claims 3, 4, 8 to 13.
  • members or portions that are substantially the same as those of the above-described embodiment are denoted by the same reference numerals in the drawings, and the description thereof is omitted.
  • the surface pads 14 and 86 are formed with surface concave grooves 36 that are constituted by a large number of inclined grooves concentrically extending in the circumferential direction with the central axis 18 as the center of curvature.
  • the back surface groove 20 is also formed with a plurality of inclined grooves 38 concentrically extending in the circumferential direction about the central axis 18 as the center of curvature.
  • the front concave groove 36 is formed to open radially outward and the back concave groove 38 has a diameter. It is formed so as to open toward the inside of the direction slant.
  • the front surface concave groove 36 is formed to open radially inward and the back surface concave groove 38 is formed. Diagonally in the radial direction It is formed to open outward.
  • FIGS. 25 and 26 show polishing pads 88 and 90 according to another embodiment of the present invention described in claims 1, 3, 4, 5, 8 to 13. .
  • the above The members or portions that are substantially the same as those in the embodiment will be denoted by the same reference numerals in the drawings, and description thereof will be omitted.
  • the polishing pads 88 and 90 are formed with surface concave grooves 36 each having a plurality of inclined grooves concentrically extending in the circumferential direction with the central axis 18 as a center of curvature on the surface 14 thereof.
  • the back surface groove 20 is also formed with a plurality of inclined grooves 38 concentrically extending in the circumferential direction about the central axis 18 as the center of curvature.
  • the front surface concave groove 36 is formed to be opened obliquely outward in the radial direction, and the back surface concave groove 38 is formed. Diagonally in the radial direction It is formed to open outward.
  • the front surface concave groove 36 is formed to open in the radially inward direction and the back surface concave groove 38 is formed. It is formed so as to open inward in the radial direction.
  • FIG. 27 shows a polishing pad 92 as another embodiment of the present invention described in claims 3, 8 and 13.
  • members or portions that are substantially the same as those of the above-described embodiment are denoted by the same reference numerals in the drawings, and description thereof is omitted.
  • a surface concave groove 16 is formed around the central axis 18 of the pad substrate 12 on the surface 14 which is one surface of the pad substrate 12, and is opened on the surface 14.
  • a back surface concave groove 22 is formed around the central axis 18 of the pad substrate and is opened in the back surface 20.
  • the radial pitch: Pt of the back surface concave grooves 22 is made smaller than the radial pitch: Pb of the front surface concave grooves 16. More specifically, the back surface recessed grooves 22 are formed at a radial pitch approximately twice that of the surface surface recessed grooves 16, and the back surface recessed grooves 22 are formed more than the front surface recessed grooves 16. [0190] In the polishing pad 92 having the structure according to the present embodiment as described above, (Problem 1) and (Problem 4) in the problems of the conventional technique described above can be effectively solved.
  • both the front and back grooves 16 and 16 are formed by circular grooves that do not have an inclination angle with respect to the center axis.
  • Recessed groove 22 the surface groove formed by the inclined groove inclined with respect to the central axis as the surface groove. 36 can be adopted, and as shown in FIGS. 30 to 35, the back-side recessed groove 38 formed of an inclined groove inclined with respect to the central axis is also used as the back-side recessed groove. It is possible to adopt.
  • FIG. 36 shows a polishing pad 94 as another embodiment of the present invention described in claims 3, 6, 8, and 13.
  • members or portions that are substantially the same as those of the above-described embodiment are denoted by the same reference numerals in the drawings, and description thereof is omitted.
  • a surface concave groove 16 is formed around the central axis 18 of the pad substrate 12 on the surface 14 which is one surface of the pad substrate 12, and is opened on the surface 14.
  • a back surface concave groove 22 is formed around the central axis 18 of the pad substrate and is opened in the back surface 20.
  • the radial pitch: Pb of the back surface concave grooves 22 is larger than the radial pitch: Pt of the front surface concave grooves 16. More specifically, the back surface concave grooves 22 are formed with a radial pitch substantially half that of the front surface concave grooves 16, and the back surface concave grooves 22 are formed more than the front surface concave grooves 16.
  • the surface concave groove is a surface concave groove 16 constituted by a circular groove having no inclination angle with respect to the central axis.
  • a surface concave groove 36 composed of an inclined groove inclined with respect to the central axis as the surface concave groove.
  • the back groove is a back groove 22 constituted by a circular groove having no inclination angle with respect to the central axis.
  • a back groove 38 formed of an inclined groove inclined with respect to the central axis as the back groove.
  • FIG. 45 shows a polishing pad 96 as an embodiment of the present invention as set forth in claims 3, 4, 7, and 13.
  • members or portions that are substantially the same as those of the above-described embodiment are denoted by the same reference numerals in the drawings, and description thereof is omitted.
  • a surface concave groove 16 is formed around the central axis 18 of the pad substrate 12 on the surface 14 which is one surface of the pad substrate 12, and is opened on the surface 14.
  • a back surface concave groove 22 is formed around the central axis 18 of the pad substrate and is opened in the back surface 20.
  • the groove depth of the front concave groove 16 Dt and the groove depth of the rear concave groove 22: total value of Db (Dt + Db) force Thickness dimension of the pad substrate 12: T Has been bigger than.
  • the polishing pad 96 is advantageously given greater elasticity.
  • the surface concave groove is a surface concave groove 16 constituted by a circular groove having no inclination angle with respect to the central axis.
  • a surface concave groove 36 constituted by an inclined groove inclined with respect to the central axis as the surface concave groove.
  • the back groove is a back groove 22 constituted by a circular groove having no inclination angle with respect to the central axis.
  • a back groove 38 formed by an inclined groove inclined with respect to the central axis as the back groove.
  • FIGS. 54 to 56 show polishing pads 98 and 100 as one embodiment of the present invention described in claims 9 and 13.
  • the polishing pads 98 and 100 are formed by a thin disc-shaped pad substrate 12 having a constant thickness dimension: T as a whole.
  • the pad substrate 12 is formed of various suitable materials including, for example, a hard foamed or unfoamed synthetic resin material, a hard rubber material, a fiber material, an inorganic material, and the like. Is formed of urethane foam.
  • the pad thickness dimension is appropriately set according to the material of the wafer to be processed, which is limited only by the material of the pad substrate 12, and the required processing accuracy.
  • the surface 14 which is one surface of the pad substrate 12 in the present embodiment has a groove or the like and is formed into a flat surface or a flat surface.
  • a back surface concave groove 38 constituted by a circular groove extending in the circumferential direction is formed around the central axis 18 of the pad substrate. It is open on the back surface 20.
  • the energized back surface concave groove 38 has a large number of circles each having a center axis 18 as the center of curvature and having different radii of curvature. It is constituted by a groove 38, 38, 38, ... in the shape.
  • the back surface recessed groove 38 is a circular groove.
  • the inclined groove is inclined by a certain angle with respect to the central axis 18 of the pad substrate 12.
  • the backside inner wall surface 44 and the backside outside wall surface 46 are parallel to each other, and not only in the circumferential direction of the backside groove 38 but also in the depth direction.
  • the entire back groove 38 has a substantially constant width dimension: Bb.
  • the strong back groove 38 goes to the opening.
  • the back surface recessed groove 38 is applied to the polishing pad 100 shown in FIG. However, as it goes to the opening, it is gradually spaced away from the central axis 18 toward the outer peripheral side, and the pad substrate 12 is opened outward in the radial direction.
  • the specific set values such as the dimensions of each part of the back groove 38 were formed on the material and thickness of the pad substrate 12, the outer diameter, the material of the wafer to be polished, and the wafer. It is determined by comprehensively considering the shape and material of the metal wire, the required polishing accuracy, etc., and is not particularly limited.
  • the groove width of the back groove 38 is: Bb , Depth: Db, Radial pitch: Pb values should be set within the following ranges.
  • the groove width: Bb or groove depth: Db of the back side recessed groove 38 is too small, it will be difficult to give sufficient elasticity to the polishing pads 98, 100, and the desired polishing will be performed. It is difficult to achieve accuracy.
  • the groove width: Bb or groove depth: Db of the back-side recessed groove 38 is too large, the elasticity exerted on the back surface 20 of the polishing pads 98, 100 becomes larger than necessary, and the polishing accuracy decreases. There is a risk of inviting.
  • the bottom surface of the back surface recessed groove 38 may be any of a curved surface and a flat surface that are not limited in shape or the like, but in particular in the present embodiment, the bottom surface of the back surface recessed groove 38 is The flat surfaces are orthogonal to the central axis 18 of the polishing pads 98 and 100.
  • the effective depth of the back groove 38 is set large by making the bottom surface of the back groove 38 a flat surface substantially parallel to the surfaces of the polishing pads 98, 100, the bottom of the back groove 38 It is possible to obtain favorable strength characteristics by advantageously securing the gap between the wall portions.
  • the polishing pads 98 and 100 having the front surface 14 and the back surface 20 are used for polishing a wafer or the like in the same manner as in the prior art. Specifically, for example, as shown in FIGS. 55 and 56, it is placed on the support surface of the rotating plate (support plate) 24 of the polishing apparatus and is negatively charged by air. The rotary plate 24 is fixed and attached by means such as pressure suction or double-sided adhesive bonding. Then, the wafer 26 is superimposed on the surface 14 while being driven to rotate around the central axis 18, so that it is subjected to a polishing process.
  • a polishing liquid (slurry) 30 is provided between the opposing surfaces of the surface 14 of the polishing pads 98 and 100 and the processing surface 28 of the wafer 26. And the wafer 26 itself is also driven to rotate around its central axis.
  • the polishing liquid 30 is also supplied with the central partial force of the polishing pads 98, 100 to the surface of the polishing pads 98, 100, for example, due to the centrifugal force associated with the rotation of the polishing pads 98, 100 around the central axis 18. It spreads over the surface of the polishing pad 98, 100.
  • the polishing pads 98 and 100 having the structure according to the present embodiment can effectively solve (Problem 2) and (Problem 4) in the problems of the prior art described above.
  • the back surface recessed groove 38 as an inclined groove inclined with respect to the central axis, the elasticity imparted to the polishing pads 98, 100 by forming the recessed groove is more advantageously ensured. Therefore, it is possible to reliably meet various performance requirements for the polishing pads 98 and 100.
  • the inclined groove in an annularly extending manner, the elastic deformation of the pad substrate 12 based on the stress acting on the contact surface (machined surface) to the workpiece due to the inclined groove is reduced.
  • the back surface concave groove 38 into an annular groove extending in the circumferential direction, it is possible to advantageously prevent the polishing liquid 30 supplied to the front surface 14 side from entering the back surface 20 side along the outer peripheral surface. Can do. Therefore, the polishing pads 98 and 100 are separated from the rotating plate 24 of the polishing apparatus due to the polishing liquid 30 entering between the opposite surfaces of the back surface 20 and the supporting surface of the rotating plate 24, or the rotating plate. It is possible to prevent the occurrence of problems such as displacement, and to perform the polishing process with high reliability.
  • the polishing pads 98, 100 can be formed. Ensuring sufficient elasticity In addition, it is possible to obtain a sufficient fixing force between the back surface 20 and the rotating plate 24, and to achieve high reliability.
  • the surface 14 is a smooth surface on which no concave grooves or the like are formed.
  • the force surface 14 has FIGS. 57 to 60, or FIGS. 2 to 4, 8 to 15: , 18-49, 61-67, surface grooves with various shapes can be formed.
  • it is constituted by a surface concave groove 16 constituted by a large number of circular grooves extending in the circumferential direction with the central axis 18 as a center of curvature, or a plurality of linear grooves extending linearly in one radial direction.
  • Concave groove 50 extending in the circumferential direction with the central axis 18 as the center of curvature, and composed of a large number of circular grooves inclined at a predetermined inclination angle relative to the central axis 18 (straight line parallel to the central axis 18)
  • Surface concave groove 36 which is constituted by a plurality of linearly inclined grooves extending linearly in one radial direction and inclined at a predetermined inclination angle with respect to the central axis 18 (a straight line parallel to the central axis 18).
  • Surface concave groove 60 as shown in FIG. 64
  • surface concave groove 102 which is composed of a number of linear grooves extending in two substantially perpendicular radial directions, as shown in FIG.
  • FIGS. 68 to 70 show polishing pads 110 and 112 as one embodiment of the present invention described in claims 11, 12 and 13.
  • the polishing pads 110 and 112 are formed by a thin disk-shaped pad substrate 12 having a constant thickness dimension: T as a whole.
  • This pad substrate 12 is for example, it is made of a variety of suitable materials including hard foamed or unfoamed synthetic resin materials, hard rubber materials, fiber materials, inorganic materials, etc. Especially in this embodiment, it is made of foamed urethane. Has been.
  • the pad thickness dimension is appropriately set according to the material of the wafer to be processed only by the material of the pad substrate 12, which is not limited, and the required processing accuracy.
  • a surface concave groove 36 constituted by a circular groove extending in the circumferential direction is formed around the central axis 18 of the pad substrate 12 on the surface 14 which is one surface of the pad substrate 12 to which force is applied. It is open on the surface 14.
  • the powerful surface concave groove 36 is formed of a plurality of circles each having a central axis 18 as a center of curvature and having different curvature radii as shown in FIG. Consists of shape grooves 36, 36, 36, ....
  • the surface concave groove 36 is constituted by an inclined groove inclined at a constant angle with respect to the central axis (a straight line parallel to the central axis 18) of the pad substrate.
  • the surface inner wall surface 40 and the surface outer wall surface 42 are parallel to each other, and the surface groove is not only in the circumferential direction but also in the depth direction of the surface groove 36.
  • the surface concave groove 36 gradually increases from the central axis 18 toward the outer peripheral side as it goes to the opening.
  • the surface concave groove 36 is gradually opened toward the opening. Gradually approaching the central axis 18, the pad substrate 12 is opened diagonally inward in the radial direction.
  • the specific set values such as the dimensions of each part of the surface concave groove 36 were formed on the material of the wafer to be polished and the wafer. It is determined by comprehensively considering the shape and material of the metal wire and the required polishing accuracy.
  • the groove width of the surface groove 36 is Bt
  • the depth is Dt
  • the radial pitch is Pt
  • the angle of inclination is the following range. It is desirable to set within.
  • the groove depth of the surface concave groove 36: Dt is too small, the rigidity of the surface 14 of the polishing pads 110, 112 becomes too large, and the elasticity imparted to the polishing pads 110, 112 becomes the surface. However, it is difficult to perform precise polishing without being effectively demonstrated.
  • the groove depth Dt of the surface concave groove 36 is too large, excessive elasticity is imparted to the polishing pads 110 and 112 by the surface concave groove 36. Further, while the manufacture becomes difficult, the surface 14 of the polishing pads 110 and 112 is likely to be deformed and there is a risk of stick-slip, and the polishing is likely to be unstable.
  • a back surface concave groove 22 constituted by a circular groove extending in the circumferential direction is formed around the central axis 18 of the pad substrate. It is open on the back surface 20.
  • the energized back surface concave groove 22 is formed into a large number of circular grooves 22, 22, 22, '"each having a center axis 18 as a center of curvature and having different curvature radii. It is configured.
  • the specific set values such as the dimensions of each part of the back groove 22 are formed on the material of the pad substrate 12, the thickness, the outer diameter, the material of the wafer to be polished, and the wafer. It is determined by comprehensively considering the shape and material of the metal wire, the required polishing accuracy, etc., and is not particularly limited.
  • the groove width of the back groove 22 is: Bb , Depth: Db, Radial pitch: Pb values should be set within the following ranges.
  • the bottom surfaces of the front surface concave groove 36 and the back surface concave groove 22 may be any of a curved surface, a flat surface, etc., which are not limited in shape or the like.
  • the bottom surfaces of the groove 36 and the back concave groove 22 are flat surfaces orthogonal to the central axis 18 of the polishing pads 110 and 112.
  • the effective depth of the front and back grooves 36 and 22 is increased. Even when it is set, it is possible to advantageously secure a gap between the bottom wall portions of the front and back grooves 22 and obtain good strength characteristics.
  • the groove depth of the front surface groove 36 Dt and the groove depth of the back surface groove 22: total value of Db (Dt + Db) force
  • the thickness dimension of the pad substrate 12 T Has been smaller than.
  • the value of the thickness dimension T of the pad substrate 12 is set within the following range.
  • the polishing pads 110 and 112 having such a front surface 14 and a back surface 20 are used for polishing a wafer or the like in the same manner as in the prior art.
  • it is placed on the support surface of the rotating plate (supporting plate) 24 of the polishing apparatus, and is fixed and mounted on the rotating plate 24 by means such as negative pressure suction with air or adhesion with double-sided tape.
  • the wafer 26 is overlapped with the surface 14 while being driven to rotate around the central axis 18 to be subjected to a polishing process.
  • a polishing liquid (slurry) 30 is generally supplied between the opposing surfaces of the surface 14 of the polishing pads 110 and 112 and the surface to be polished 28 of the wafer 26 as in the prior art.
  • the wafer 26 itself is rotated around its central axis.
  • the polishing liquid 30 is supplied to the surface of the polishing pads 110, 112 from the central portion of the polishing pads 110, 112, for example, and is centrifuged along with the rotation of the polishing pads 110, 112 around the central axis 18.
  • the surface of the polishing pads 110 and 112 is spread by the action of force.
  • the back surface groove 22 is formed on the back surface 20 of the polishing pads 110 and 112 and the front surface groove 36 is formed on the surface 14, thereby providing elasticity to the polishing pads 110 and 112. It becomes possible to grant to the profit.
  • the surface concave groove 36 by forming the surface concave groove 36 by an inclined groove inclined with respect to the central axis, it is possible to further advantageously ensure the elasticity imparted to the polishing pads 110 and 112 by the formation of the concave groove. This makes it possible to meet various performance requirements for the polishing pads 110 and 112.
  • the back surface concave groove 22 into an annular groove extending in the circumferential direction, it is possible to advantageously prevent the polishing liquid 30 supplied to the front surface 14 side from entering the back surface 20 side along the outer peripheral surface. Can do. Therefore, the polishing pads 110 and 112 are separated from the rotating plate 24 of the polishing apparatus or the rotating plate due to the polishing liquid 30 entering between the opposite surfaces of the back surface 20 and the support surface of the rotating plate 24. It is possible to prevent the occurrence of problems such as displacement and to perform polishing with high reliability.
  • the inclined grooves constituting the surface concave grooves 36 in such a manner that they extend in an annular shape, the stress acting on the contact surface (machined surface) to the workpiece is reduced. Since it is possible to effectively avoid the elastic deformation of the node substrate 12 being sheared in one direction due to the inclination of the groove, the wafer or other target object can be moved in the direction perpendicular to the axis. It can be fixedly positioned and held, and high-precision polishing can be stably performed.
  • width dimension Bb depth dimension: Db
  • radial pitch Pb within the above-mentioned predetermined range of the front surface groove 36 and the back surface groove 22 to the polishing pads 110, 112. Sufficient elasticity can be ensured, and a sufficient fixing force can be obtained between the back surface 20 and the rotating plate 24, and high reliability can be realized.
  • the total depth (Dt + Db) of the groove depth Dt of the front surface groove 36 and the groove depth Db of the back surface groove 22 is smaller than the thickness dimension of the pad substrate 12.
  • the groove width of the surface groove formed on the surface 14 Bt, the groove depth: Dt,
  • Each value of radial pitch: Pt, inclination angle: h, and groove width of back groove: Bb, groove depth: Db, radial pitch: Pb, inclination angle: h b are different from each other. Even if it is good ,.
  • FIG. 63 it is also possible to employ a combination of a front concave groove 36 and a rear concave groove 38 having different groove widths. Further, for example, as shown in FIG.
  • the shape of the surface groove formed on the surface 14 is not limited to that of each of the above embodiments.
  • a surface concave groove 104 configured by combining a circular groove extending in a straight line and a linear groove extending linearly may be appropriately employed.
  • the bottom surfaces of the front concave grooves 16, 36, 50, 60 and the rear concave grooves 22, 38 are flat surfaces extending in parallel with the front surface 14 and the rear surface 20, but for example, As shown in FIG. 71, it may be constituted by a curved surface.
  • polishing pad shown in each of the above embodiments can be suitably used for polishing a glass substrate in addition to polishing a silicon wafer or the like.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
PCT/JP2005/023255 2004-12-29 2005-12-19 研磨用パッド Ceased WO2006070629A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/813,141 US7867066B2 (en) 2004-12-29 2005-12-19 Polishing pad

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004383013A JP3872081B2 (ja) 2004-12-29 2004-12-29 研磨用パッド
JP2004-383013 2004-12-29

Publications (1)

Publication Number Publication Date
WO2006070629A1 true WO2006070629A1 (ja) 2006-07-06

Family

ID=36614748

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/023255 Ceased WO2006070629A1 (ja) 2004-12-29 2005-12-19 研磨用パッド

Country Status (5)

Country Link
US (1) US7867066B2 (enExample)
JP (1) JP3872081B2 (enExample)
CN (1) CN100562401C (enExample)
TW (1) TWI375606B (enExample)
WO (1) WO2006070629A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140030958A1 (en) * 2012-07-30 2014-01-30 GLOBAL FOUNDRIES Singapore Pte. Ltd. Single grooved polishing pad

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD559066S1 (en) * 2004-10-26 2008-01-08 Jsr Corporation Polishing pad
JP5105095B2 (ja) * 2006-10-27 2012-12-19 Ｊｓｒ株式会社 化学機械研磨パッドの製造方法および被研磨体の加工方法
US9180570B2 (en) 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
TWI360459B (en) * 2008-04-11 2012-03-21 Bestac Advanced Material Co Ltd A polishing pad having groove structure for avoidi
JP5230328B2 (ja) 2008-09-30 2013-07-10 スピードファム株式会社 ウエハノッチ部の研磨パッド
CN102498549A (zh) * 2009-07-16 2012-06-13 嘉柏微电子材料股份公司 沟槽式化学机械抛光抛光垫
EP2498951A1 (en) * 2009-11-12 2012-09-19 3M Innovative Properties Company Rotary buffing pad
JP2012106328A (ja) * 2010-03-25 2012-06-07 Toyo Tire & Rubber Co Ltd 積層研磨パッド
KR101440175B1 (ko) 2010-06-30 2014-09-12 코오롱인더스트리 주식회사 연마패드 및 그 제조방법
TWI532565B (zh) * 2011-03-21 2016-05-11 智勝科技股份有限公司 研磨方法以及研磨系統
JPWO2013103142A1 (ja) * 2012-01-06 2015-05-11 東レ株式会社 研磨パッド
JP5935168B2 (ja) 2012-08-20 2016-06-15 東邦エンジニアリング株式会社 基板研磨装置
CN102990535A (zh) * 2012-11-27 2013-03-27 无锡市彩云机械设备有限公司 一种抛光垫
US9308620B2 (en) * 2013-09-18 2016-04-12 Texas Instruments Incorporated Permeated grooving in CMP polishing pads
TWI599447B (zh) 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
US10150204B2 (en) * 2014-06-04 2018-12-11 Paolo Baratti Abrasive tool for machining surfaces
US10199242B2 (en) 2014-12-31 2019-02-05 Osaka University Planarizing processing method and planarizing processing device
US10092998B2 (en) * 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
US10189143B2 (en) 2015-11-30 2019-01-29 Taiwan Semiconductor Manufacturing Company Limited Polishing pad, method for manufacturing polishing pad, and polishing method
JP6754519B2 (ja) * 2016-02-15 2020-09-16 国立研究開発法人海洋研究開発機構 研磨方法
JP6187948B1 (ja) 2016-03-11 2017-08-30 東邦エンジニアリング株式会社 平坦加工装置、その動作方法および加工物の製造方法
JP7026942B2 (ja) * 2018-04-26 2022-03-01 丸石産業株式会社 研磨パッド用の下敷及び該下敷を使用する研磨方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003083918A1 (en) * 2002-04-03 2003-10-09 Toho Engineering Kabushiki Kaisha Polishing pad and semiconductor substrate manufacturing method using the polishing pad
JP2004202666A (ja) * 2002-12-26 2004-07-22 Sony Corp 研磨装置、研磨部材、および研磨方法
JP2005294410A (ja) * 2004-03-31 2005-10-20 Toyo Tire & Rubber Co Ltd 研磨パッド

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441598A (en) * 1993-12-16 1995-08-15 Motorola, Inc. Polishing pad for chemical-mechanical polishing of a semiconductor substrate
JP3042593B2 (ja) 1995-10-25 2000-05-15 日本電気株式会社 研磨パッド
JP3324643B2 (ja) 1995-10-25 2002-09-17 日本電気株式会社 研磨パッド
US5913713A (en) * 1997-07-31 1999-06-22 International Business Machines Corporation CMP polishing pad backside modifications for advantageous polishing results
JP3152188B2 (ja) 1997-11-28 2001-04-03 日本電気株式会社 研磨パッド
KR100471527B1 (ko) * 1999-03-30 2005-03-09 가부시키가이샤 니콘 연마체, 연마장치, 연마방법 및 반도체 소자의 제조방법
US6217426B1 (en) 1999-04-06 2001-04-17 Applied Materials, Inc. CMP polishing pad
KR100867339B1 (ko) 2000-12-01 2008-11-06 도요 고무 고교 가부시키가이샤 연마 패드 및 그 제조 방법
CN1504315A (zh) * 2002-12-05 2004-06-16 智胜科技股份有限公司 研磨垫的制造方法
JP4292025B2 (ja) * 2003-05-23 2009-07-08 Ｊｓｒ株式会社 研磨パッド
US20040259479A1 (en) * 2003-06-23 2004-12-23 Cabot Microelectronics Corporation Polishing pad for electrochemical-mechanical polishing
US7442116B2 (en) 2003-11-04 2008-10-28 Jsr Corporation Chemical mechanical polishing pad

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003083918A1 (en) * 2002-04-03 2003-10-09 Toho Engineering Kabushiki Kaisha Polishing pad and semiconductor substrate manufacturing method using the polishing pad
JP2004202666A (ja) * 2002-12-26 2004-07-22 Sony Corp 研磨装置、研磨部材、および研磨方法
JP2005294410A (ja) * 2004-03-31 2005-10-20 Toyo Tire & Rubber Co Ltd 研磨パッド

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140030958A1 (en) * 2012-07-30 2014-01-30 GLOBAL FOUNDRIES Singapore Pte. Ltd. Single grooved polishing pad
US9421669B2 (en) * 2012-07-30 2016-08-23 Globalfoundries Singapore Pte. Ltd. Single grooved polishing pad

Also Published As

Publication number Publication date
CN101119829A (zh) 2008-02-06
JP2006187819A (ja) 2006-07-20
JP3872081B2 (ja) 2007-01-24
CN100562401C (zh) 2009-11-25
TWI375606B (en) 2012-11-01
US7867066B2 (en) 2011-01-11
US20080064311A1 (en) 2008-03-13
TW200700187A (en) 2007-01-01

Similar Documents

Publication Publication Date Title
WO2006070629A1 (ja) 研磨用パッド
US7357698B2 (en) Polishing pad and chemical mechanical polishing apparatus using the same
CN106181752B (zh) 内表面具有特征结构的保持环
KR101275441B1 (ko) 캐리어, 캐리어의 코팅 방법, 및 반도체 웨이퍼의 양면 재료를 동시에 제거하는 가공 방법
JP6657201B2 (ja) 凹所およびキャップを有する、中心部が可撓性の片面研磨ヘッド
TWI845333B (zh) 用於cmp的保持環
JP2007227915A (ja) 表面の研磨
US20080064302A1 (en) Polishing apparatus, polishing pad, and polishing method
KR102541126B1 (ko) 정전 흡착 척, 그 제조 방법 및 반도체 장치의 제조 방법
JP2002028849A (ja) 研磨パッド
JP2000288918A (ja) パターン面を備える改良型ｃｍｐプラテン
JP2003511255A (ja) 研磨パッド用コンディショナーおよびその製造方法
CN109922924B (zh) Cmp垫修整组合件
CN100365773C (zh) 抛光垫、抛光装置及抛光方法
US20070259609A1 (en) Cmp Conditioner
JP2000306870A (ja) 研磨パッド及び試料吸着パッド並びにこれらを用いた試料研磨装置及び試料研磨方法
JP2002355753A (ja) 高性能長寿命リテーナリング及びそれを含む研磨装置
CN101628395B (zh) 化学机械抛光垫制造组合件
US10950504B2 (en) Wafer processing method
JP4384136B2 (ja) 研磨パッド
JP2010209371A (ja) 炭素膜被覆部材、炭素膜の形成方法及びｃｍｐパッドコンディショナー
JP3937294B2 (ja) 研磨装置
US7131901B2 (en) Polishing pad and fabricating method thereof
US20230234183A1 (en) Method of processing workpiece
CN1938128A (zh) Cmp调节器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 11813141

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 200580048296.3

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 11813141

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 05816414

Country of ref document: EP

Kind code of ref document: A1

WWW Wipo information: withdrawn in national office

Ref document number: 5816414

Country of ref document: EP