WO2006018960A1 - 現像処理方法 - Google Patents
現像処理方法 Download PDFInfo
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- WO2006018960A1 WO2006018960A1 PCT/JP2005/013931 JP2005013931W WO2006018960A1 WO 2006018960 A1 WO2006018960 A1 WO 2006018960A1 JP 2005013931 W JP2005013931 W JP 2005013931W WO 2006018960 A1 WO2006018960 A1 WO 2006018960A1
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- WIPO (PCT)
- Prior art keywords
- substrate
- predetermined
- liquid
- resist film
- development processing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Definitions
- the present invention relates to a method for developing a resist film provided on a substrate such as a semiconductor wafer and a computer-readable storage medium.
- a resist solution is applied to the surface of a semiconductor wafer (hereinafter referred to as "wafer") to form a resist film, and this resist film is exposed to a predetermined pattern.
- a so-called photolithography technique of developing the exposure pattern thus formed on the resist film is used, and a resist pattern corresponding to the exposure pattern is formed by the development process.
- a developer is supplied to the wafer to form a developer paddle, and the developer is allowed to proceed by natural convection for a predetermined time, and then the developer.
- pure water is supplied as a cleaning solution to wash away the developer remaining on the wafer, and then the wafer is rotated at a high speed to shake off the developer and cleaning solution remaining on the wafer to dry the wafer.
- Patent Document 1 proposes a technique for reducing the surface tension of a rinsing liquid by mixing a surfactant solution in the rinsing liquid, for example.
- Patent Document 2 discloses a process for supplying a surfactant when the substrate is rinsed after development.
- Patent Document 3 discloses a method of developing and rinsing a resist film, solidifying the rinsing liquid with the rinsing liquid attached to the resist film, and sublimating the rinsing liquid solidified product. Has been.
- Patent Document 1 JP-A-7-142349
- Patent Document 2 Japanese Patent Laid-Open No. 2001-5191
- Patent Document 3 Japanese Patent Laid-Open No. 7-20637
- An object of the present invention is to provide a development processing method that suppresses the occurrence of precipitation defects such as particles in development processing, CD fluctuation, and LER, and prevents pattern collapse. is there.
- Another object of the present invention is to provide a development processing method capable of preventing pattern collapse of a finely lined resist pattern.
- Still another object of the present invention is to provide a computer-readable storage medium in which a control program for executing these development processing methods is stored.
- a resist film provided on a surface of the resist film is exposed with a predetermined pattern, and then developed with a predetermined developer.
- a first rinse solution containing a predetermined surfactant at a critical micelle concentration or less is supplied to the treated substrate, and a rinsing treatment is performed, and a crosslinking agent for curing the resist film on the substrate is included.
- Supplying a chemical solution onto the substrate, and irradiating the surface of the substrate with a predetermined high-engineered energy line in a state where the chemical solution is accumulated on the substrate, the cross-linking agent and the high-engineered energy line And developing the resist film by a synergistic effect of irradiation.
- the occurrence of precipitation defects is suppressed by the previous processing, that is, processing by the first rinsing liquid, LER deterioration is prevented, and CD fluctuation is further suppressed.
- the pattern collapse of the resist film can be prevented by subsequent processing, that is, processing for curing the resist film.
- the substrate after the resist film is cured is rotated to shake off the chemical solution, and the surface tension of the substrate is 50 dyne Zcm or less.
- the development processing method as another method for making the pattern collapse of the resist film less likely to occur, a state in which the chemical solution is accumulated on the substrate after the resist film is cured Then, a specific inert liquid having a specific gravity greater than that of the chemical liquid and not mixed with the chemical liquid is supplied, and the resist film is left for a predetermined time so as to be immersed in the inert liquid.
- a developing process that further includes precipitating the active liquid, and rotating the substrate at a predetermined rotational speed to shake off the chemical liquid and the inert liquid to dry the substrate.
- an alternative chlorofluorocarbon is preferably used as the inert liquid.
- a resist film provided on a substrate is exposed to a predetermined pattern and then developed with a predetermined developer on the substrate.
- the resist film is cured by a synergistic effect of the irradiation of the agent and the high-tech energy line, and the substrate is supplied with a first rinsing solution containing a predetermined surfactant at a critical micelle concentration or less and rinsed.
- a development processing method is provided.
- the development processing method according to the second aspect is the one in which the order of the preceding process and the subsequent process in the development processing method according to the first aspect is changed. Similar to the development processing method according to the first aspect, the occurrence of precipitation defects is suppressed, the LER is prevented from deteriorating, the CD variation is further suppressed, and the pattern collapse of the resist film can be prevented.
- the treatment using the inert liquid added to the development processing method according to the first aspect can be additionally applied to the development processing method according to the second aspect. Pattern collapse can be made more difficult to occur.
- a resist film provided on the surface of the substrate is exposed to a predetermined pattern, and then developed to a predetermined field on a substrate that has been developed with a predetermined developer.
- a first rinsing solution containing a surfactant at a critical micelle concentration or less is supplied and rinsed, and a predetermined surfactant or fluorochemical is applied to the substrate so that its surface tension is 50 dyne Zcm or less.
- a development processing method is provided.
- a resist film provided on the surface of the substrate is exposed to a predetermined pattern, and then developed to a predetermined field on a substrate developed with a predetermined developer.
- a predetermined inert liquid having a specific gravity greater than that of the first rinse liquid is supplied, and the resist film is left for a predetermined time so as to be immersed in the inert liquid.
- precipitating an active liquid rotating the substrate at a predetermined rotational speed, shaking off the first rinse liquid and the inert liquid from the substrate cover, and drying the substrate.
- substitute chlorofluorocarbon is preferably used as the inert liquid.
- the surfactant contained in the first rinse liquid is an ethylene glycol-based, ether-based or acetylene glycol-based surfactant.
- the surfactant contained in the first rinsing liquid preferably has a molecular weight of 1280 or more, and the hydrophobic group preferably has 14 or more carbon atoms in the hydrophobic group. It is preferred not to have a triple bond Yes. As a result, it is possible to further enhance the various effects of suppressing the occurrence of precipitation defects, preventing the deterioration of LER, and suppressing the CD fluctuation.
- a resist film provided on a substrate is exposed to light in a predetermined pattern, and then developed to a substrate with a predetermined developer.
- the surface of the substrate is irradiated with a predetermined high-engineered energy line
- the resist film is cured by a synergistic effect of the irradiation of the crosslinking agent and the high-engineered energy line, and the substrate after the resist film is cured is rotated.
- the chemical solution is shaken off from the substrate, and the substrate is supplied with a rinsing solution to which a predetermined surfactant or fluorine-based chemical is added so that the surface tension is 50 dyne Zcm or less. And the substrate Is rotated at a predetermined rotational speed shaking the board force the rinse liquid, developing method and a drying said substrate.
- a resist film provided on a substrate is exposed to light in a predetermined pattern, and then developed to a substrate with a predetermined developer.
- a specific inert liquid having a specific gravity greater than that of the chemical liquid and not mixed with the chemical liquid is supplied, and the resist film is left for a predetermined time so as to be immersed in the inert liquid.
- Precipitating the active liquid and It is rotated at a predetermined rotational speed shaking
- an alternative freon is preferably used as the inert liquid.
- the development processing methods according to the fifth and sixth aspects are used when the precipitation defects do not cause quality problems and it is important to prevent the turnover.
- a seventh aspect of the present invention there is provided a computer-readable storage medium storing software for causing a computer to execute a control program, and the control program is provided on a surface thereof at the time of execution.
- a first rinse solution containing a predetermined surfactant at a critical micelle concentration or less is supplied to a substrate that has been exposed to light with a predetermined pattern and then developed with a predetermined developer.
- a development processing method which includes irradiating a surface with a predetermined high-engineered energy line, and curing the resist film by a synergistic effect of irradiation with the cross-linking agent and the high-engineered energy line.
- a computer-readable storage medium storing software for causing a computer to execute a control program, wherein the control program is provided on a substrate at the time of execution.
- the surface of the substrate is irradiated with a predetermined high-engineered energy line, and the resist film is formed by a synergistic effect of the irradiation of the cross-linking agent and the high-engineered energy line.
- a development processing method including curing, supplying a first rinsing solution containing a predetermined surfactant at a critical micelle concentration or less to the substrate, and rinsing the substrate.
- a computer-readable storage medium is provided that causes a computer to control the substrate processing apparatus.
- a computer-readable storage medium in which software for causing a computer to execute a control program is stored, and the control program is provided on the surface at the time of execution.
- a first rinse solution containing a predetermined surfactant at a critical micelle concentration or less is supplied to a substrate that has been exposed to light with a predetermined pattern and subsequently developed with a predetermined developer.
- Rinsing supplying the substrate with a second rinsing liquid to which a predetermined surfactant or fluorine-based chemical is added so that the surface tension is 50 dyne Zcm or less, and rinsing,
- the substrate is rotated at a predetermined number of revolutions, and the second rinse liquid is shaken off from the substrate, and the substrate is dried.
- a computer-readable storage medium that causes a computer to control a substrate processing apparatus such that a development processing method is performed.
- a computer-readable storage medium storing software for causing a computer to execute a control program, and the control program is provided on a surface thereof at the time of execution.
- a first rinse solution containing a predetermined surfactant at a critical micelle concentration or less is supplied to a substrate that has been exposed to light with a predetermined pattern and subsequently developed with a predetermined developer.
- the specific gravity is larger than that of the first rinsing liquid and does not mix with the first rinsing liquid.
- a predetermined inert liquid is supplied, and the resist film is allowed to stand for a predetermined time so that the resist film is immersed in the inert liquid, and the substrate is rotated at a predetermined rotation speed.
- a computer-readable storage for causing a computer to control the substrate processing apparatus so that a development processing method is performed which includes shaking off the first rinsing liquid and the inert liquid from the substrate and drying the substrate.
- a medium is provided.
- a computer-readable storage medium storing software for causing a computer to execute a control program, wherein the control program is provided on a substrate at the time of execution.
- the control program is provided on a substrate at the time of execution.
- a chemical solution containing a cross-linking agent Supplying a chemical solution containing a cross-linking agent, and irradiating the surface of the substrate with a predetermined high energy line in a state where the chemical solution is accumulated on the substrate, thereby Curing the resist film by a synergistic effect of irradiation of the energy line, rotating the substrate after the resist film has been cured, and shaking off the chemical solution from the substrate;
- a rinsing liquid to which a predetermined surfactant or fluorochemical is added so that the surface tension is 50 dyne Zcm or less is supplied, rinsed, and the substrate is rotated at a predetermined rotational speed.
- a computer-readable storage medium that causes a computer to control a substrate processing apparatus such that a development processing method is performed that includes shaking off a rinsing liquid from the substrate and drying the substrate.
- a computer-readable storage medium storing software for causing a computer to execute a control program, wherein the control program is provided on a substrate at the time of execution. In order to cure the resist film on the substrate with the resist film exposed to a predetermined pattern and then developed with a predetermined developer while the surface of the substrate is wet with the developer.
- the occurrence of precipitation defects such as particles is suppressed, the LER deterioration is suppressed, the CD fluctuation is suppressed, and the occurrence of pattern collapse is further suppressed.
- a precise resist pattern can be obtained.
- the effect of preventing the occurrence of pattern collapse can be further enhanced.
- FIG. 1 is a plan view showing a development processing apparatus in which a method according to an embodiment of the present invention is performed.
- FIG. 2 is a cross-sectional view showing a development processing apparatus in which a method according to an embodiment of the present invention is performed.
- FIG. 3 is a diagram showing a schematic configuration of a liquid supply system of the development processing apparatus of FIGS. 1 and 2.
- FIG. 3 is a diagram showing a schematic configuration of a liquid supply system of the development processing apparatus of FIGS. 1 and 2.
- FIG. 4A is a diagram simply showing a first development processing method.
- FIG. 4B is a diagram simply showing a second development processing method.
- FIG. 4C is a diagram simply showing a third development processing method.
- FIG. 4D is a diagram simply showing a fourth development processing method.
- FIG. 4E is a diagram simply showing a fifth development processing method.
- FIG. 4F is a diagram simply showing a sixth development processing method.
- FIG. 4G is a diagram simply showing a seventh development processing method.
- FIG. 4H is a diagram simply showing an eighth development processing method.
- FIG. 41 is a diagram simply showing a ninth development processing method.
- FIG. 4J is a diagram simply showing a tenth development processing method.
- FIG. 5 is a flowchart showing a third development processing method.
- FIG. 6 is a flowchart showing a sixth development processing method.
- FIG. 1 is a plan view showing an example of a development processing apparatus used in the practice of the present invention
- FIG. 2 is a sectional view thereof.
- the two orthogonal directions are the X and Y directions
- the vertical direction is the Z direction.
- the development processing apparatus has a housing 1 and a fan for forming a downflow of clean air in the housing on the ceiling of the housing 1
- a filter unit F is provided.
- an annular cup CP is disposed in the center of the housing 1, and a spin chuck 2 is disposed inside the cup CP.
- the spin chuck 2 holds and holds the wafer W by vacuum suction.
- a drive motor 3 is disposed below the spin chuck 2, and the spin chuck 2 is rotationally driven by the drive motor 3.
- the drive motor 3 is attached to the floor board 4.
- cup CP lifting pins 5 for transferring the wafer W are provided so as to be lifted and lowered by a driving mechanism 6 such as an air cylinder.
- a drain cup 7 for waste liquid is provided in cup CP.
- a drain pipe 8 (see Fig. 1) is connected to the drain port 7, and the drain pipe 8 passes through a space N between the bottom plate 4 and the casing 1 as shown in Fig. If not, connect to the waste outlet.
- An opening la for allowing the transfer arm T of the wafer transfer apparatus to enter is formed on the side wall of the housing 1, and the opening la can be opened and closed by a shirter 9.
- the shirt 9 is opened and the transfer arm T enters the housing 1.
- the transfer of the wafer W between the transfer arm T and the spin chuck 2 is performed with the lifting pins 5 raised.
- a chemical solution containing a developer nozzle 11 for supplying a developer to the surface of wafer W and a cross-linking agent for curing a resist film on the surface of wafer W after the image formation is provided.
- curing chemical a chemical nozzle 12a for supplying a first rinse liquid nozzle 13 for supplying a first rinse liquid containing a predetermined surfactant to Ueno and W after development, and A second rinse liquid nozzle 14 for supplying a second rinse liquid containing a predetermined surfactant to the developed wafer W is provided.
- DIW pure water
- the developer nozzle 11 has a long shape and is arranged horizontally such that the longitudinal direction thereof is the X direction.
- the lower surface of the developer nozzle 11 is provided with a plurality of discharge ports (not shown), and the developer discharged from each discharge port is formed in a strip shape as a whole.
- the developer nozzle 11 is detachably attached to the tip of the first nozzle scan arm 16 by a holding member 41a, and the first nozzle scan arm 16 is laid on the bottom plate 4 along the Y direction.
- the upper force of the first guide rail 26 is also attached to the upper end portion of the first vertical support member 36 extending in the vertical direction (Z direction).
- the developer nozzle 11 is horizontally movable along the Y direction by the Y-axis drive mechanism 46 together with the first vertical support member 36, and moves between the supply position on the wafer W and the standby position outside the wafer W. It is provided as possible. Further, the first vertical support member 36 can be moved up and down by the Z-axis drive mechanism 56, so that the developer nozzle 11 can move to the dischargeable position close to the wafer W by moving up and down the first vertical support member 36. It is freely movable between the upper non-ejection position.
- the developer nozzle 11 When the developer is applied to the wafer W, the developer nozzle 11 is positioned above the wafer W, and the wafer W is rotated at least 1Z2 while discharging the developer from the developer nozzle 11 in a strip shape. For example, by making one rotation, the developer is applied to the entire surface of the wafer W, and a developer pad is formed. When the developer is discharged, the developer nozzle 11 may be scanned along the first guide rail 26 without rotating the wafer W! As the developer nozzle 11, a developer discharge port having a slit-like shape can also be used.
- the chemical nozzle 12a has the same structure as the developer nozzle 11.
- An ultraviolet irradiation unit 12b equipped with an ultraviolet lamp 42 is mounted on the side surface of the chemical nozzle 12a in the Y direction.
- the chemical nozzle 12a is detachably attached to the tip of the second nozzle scan arm 17 by a holding member 4 lb.
- the second nozzle scan arm 17 is disposed on the bottom plate 4 along the Y direction.
- the upper force of the laid second guide rail 27 is attached to the upper end portion of the second vertical support member 37 extending in the vertical direction (Z direction).
- the chemical nozzle 12a and the ultraviolet irradiation unit 12b are integrally movable along the Y direction by the Y-axis drive mechanism 47 together with the second vertical support member 37, the chemical supply position on the wafer W and the ultraviolet irradiation. It is configured to be movable between the position and the standby position outside the wafer W.
- the second vertical support member 37 can be moved up and down by the Z-axis drive mechanism 57, so that the chemical nozzle 12a and the ultraviolet irradiation unit 12b can discharge close to the wafer W by moving up and down the second vertical support member 37. It can move integrally between the position and the non-ejection position above it.
- the chemical nozzle 12a When the curing chemical is applied to the wafer W, the chemical nozzle 12a is positioned above the wafer W, and the wafer W is ejected from the chemical nozzle 12a in a strip shape while the wafer W is rotated more than 1Z2 times, for example, By making one rotation, the curing chemical is applied to the entire surface of the wafer W, and a curing chemical paddle is formed.
- the ultraviolet irradiation unit 12b has a slit irradiation type structure, and the ultraviolet rays are long in the X direction, and are irradiated in a strip shape downward from the ultraviolet irradiation unit 12b.
- the ultraviolet irradiation unit 12b is scanned in the Y direction along the second guide rail 27 without rotating the wafer W.
- the chemical nozzle 12 a may be scanned along the second guide rail 27 without rotating the wafer W when discharging the curing chemical.
- the first rinse liquid nozzle 13 is a straight nozzle, and discharges a first rinse liquid containing a predetermined surfactant in a columnar shape.
- the first rinsing liquid nozzle 13 is moved onto the wafer W after development, and supplies the first rinsing liquid to the resist film on which the development pattern is formed on the wafer W.
- the first rinse liquid nozzle 13 is detachably attached to the tip of the third nozzle scan arm 18.
- a third guide rail 28 is laid on the bottom plate 4, and the third nozzle scan arm 18 has an X-axis at the upper end of a third vertical support member 38 extending vertically from the third guide rail 28. It is attached via the drive mechanism 44.
- the first rinse liquid nozzle 13 is moved horizontally along the Y direction by the Y-axis drive mechanism 48 together with the third vertical support member 38. It is free to move.
- the third vertical support member 38 can be moved up and down by the Z-axis drive mechanism 58, and the first rinse liquid nozzle 13 can be moved up and down by the third vertical support member 38 up and down to a dischargeable position close to Ueno and W. It is movable between the discharge positions.
- the third nozzle scan arm 18 is movable along the X direction by the X-axis drive mechanism 44.
- First rinse liquid nozzle 13 force As a method of supplying the first rinse liquid to the surface of the wafer W, the first rinse liquid nozzle 13 is disposed on the center of the wafer W, and the rinse liquid is rotated while rotating the wafer W. And a method in which the first rinse liquid nozzle 13 is further scanned in the Y direction.
- the shape of the first rinsing liquid nozzle 13 is not particularly limited, and the first rinsing liquid nozzle 13 may have the same structure as the developing liquid nozzle 11 or may have a slit-like discharge port.
- the configuration of the second rinse liquid nozzle 14 is the same as that of the first rinse liquid nozzle 13.
- the second rinse liquid nozzle 14 is detachably attached to the tip of the fourth nozzle scan arm 19.
- a fourth guide rail 29 is laid on the bottom plate 4, and the fourth nozzle scan arm 19 has an X-axis at the upper end of the fourth vertical support member 39, which also extends in the vertical direction on the fourth guide rail 29. It is attached via a drive mechanism 45.
- the second rinse liquid nozzle 14 is horizontally movable along the Y direction by the Y axis drive mechanism 49 together with the fourth vertical support member 39.
- the fourth vertical support member 39 can be moved up and down by a Z-axis drive mechanism 59, and the second rinse liquid nozzle 14 can be moved up and down in the vicinity of the wafer W by the fourth vertical support member 39. It is movable between the discharge positions.
- the fourth nozzle scan arm 19 can be moved along the X direction by the X-axis drive mechanism 45.
- the method of supplying the second rinse liquid from the second rinse liquid nozzle 14 to the surface of the wafer W is the same as that for the first rinse liquid nozzle 13.
- the shape of the second rinse liquid nozzle 14 is not particularly limited, and the same structure as the developer nozzle 11 may be used.
- the Y-axis drive mechanism 46, 47, 48, 49, the Z-axis drive mechanism 56, 57, 58, 59, the X-axis drive mechanism 44, 45, and the drive motor 3 are controlled by the drive control unit 40. It has become.
- a developer nozzle standby part 31 on which the developer nozzle 11 waits.
- the developer nozzle standby part 31 is provided with the developer nozzle 11.
- a cleaning mechanism (not shown) for cleaning is provided.
- a chemical nozzle standby unit 32 for standby of the chemical nozzle 12a is provided between the developer nozzle standby unit 31 and the cup CP.
- the chemical nozzle standby unit 32 is provided with a cleaning mechanism (not shown) for cleaning the chemical nozzle 12a.
- a first rinse liquid nozzle standby section 33 and a second rinse liquid nozzle standby section 34 in which the first rinse liquid nozzle 13 and the second rinse liquid nozzle 14 are respectively waiting.
- Each is provided with a cleaning mechanism (not shown) for cleaning the first rinse liquid nozzle 13 and the second rinse liquid nozzle 14.
- FIG. 3 is a schematic diagram showing a liquid supply system of the development processing apparatus (DEV).
- the developer nozzle 11 is connected to a developer supply pipe 72 that supplies the developer from a developer tank 71 that stores the developer.
- the developer supply pipe 72 is provided with a pump 73 and an on / off valve 74 for supplying the developer.
- the chemical solution nozzle 12a is connected to a chemical solution supply pipe 76 that supplies a curing chemical solution from a chemical solution tank 75 in which a chemical solution containing a crosslinking agent is stored.
- the chemical solution supply pipe 76 is provided with a pump 77 and an on / off valve 78 for supplying a chemical solution for curing.
- the first rinse liquid nozzle 13 is connected to a first rinse liquid supply pipe 82 that supplies the first rinse liquid from the first rinse liquid tank 81 in which the first rinse liquid is stored.
- a pump 83 and an on / off valve 84 for supplying the first rinse liquid are interposed in the first rinse liquid supply pipe 82.
- a pure water supply pipe 86 for supplying pure water from a pure water tank 85 is connected to the first rinse liquid supply pipe 82, and the pure water supply pipe 86 is used for supplying pure water.
- a pump 87 and an on / off valve 88 are provided.
- the surfactant dissolved in the first rinse liquid it is preferable to use an ethylene glycol-based, ether-based or acetylene glycol-based surfactant.
- polyethylene glycol sorbitan fatty acid ester polyethylene glycol linear alcohol
- examples thereof include kill ether, polyethylene glycol fatty acid ester, linear alkyl addition type polyethylene glycol ether, and branched type alkyl glycol polyethylene ether with branched chain alkyl.
- the acetylene glycol surfactant include EO addition type acetylene glycol.
- the surfactant concentration of the first rinsing liquid is preferably not more than the critical micelle concentration. This is to prevent micelles from forming in the first rinsing liquid when the critical micelle concentration is exceeded, and if these micelles remain on the wafer W, they become particles. However, if the concentration of the surfactant is too low, the surface tension of the first rinsing liquid does not decrease, so that the pattern collapse of the resist pattern is likely to occur when the first rinsing liquid is removed from the wells and w. For this reason, the surfactant concentration of the first rinsing liquid is preferably equal to or less than the critical micelle concentration.
- the inventors used a surfactant having a large molecular weight and a large number of carbon atoms in the hydrophobic group, and further having a hydrophobic group that only has a single bond to improve CD uniformity and good LER. Confirm that it will be. Therefore, it is preferable to use a surfactant that further satisfies such conditions.
- the second rinse liquid nozzle 14 is connected to a second rinse liquid supply pipe 92 for supplying the second rinse liquid from the second rinse liquid tank 91 in which the second rinse liquid is stored.
- the second rinse liquid supply pipe 92 is provided with a pump 93 and an on / off valve 94 for supplying the second rinse liquid.
- the second rinse liquid supply pipe 92 has an inert liquid tank 95 in which an inert liquid (specifically, an alternative chlorofluorocarbon) having a specific gravity greater than that of pure water and a surface tension S is stored.
- An inert liquid supply pipe 96 for supplying an active liquid is connected to the inert liquid supply pipe 96.
- a pump 97 and an on / off valve 98 for supplying the inert liquid are interposed in the inert liquid supply pipe 96.
- the second rinse liquid is supplied before the wafer W is dried. That is, the second rinse liquid is on the wafer W. Since the wafer W is dried by rotating the wafer W and shaking off the second rinse liquid after being supplied to the second rinse liquid, the resist pattern is less likely to fall down as the second rinse liquid.
- Those having a reduced surface tension are preferably used. Specifically, those having a surface tension reduced to 50 dyne Zcm or less are preferably used.
- An inert liquid is used instead of the second rinse liquid.
- an inert liquid such as chlorofluorocarbon has a surface tension of 10 to 20 dyneZcm, which is very small compared to an aqueous rinse liquid, because it dissolves the resist pattern. The pattern collapse can be prevented more effectively by making the substrate immersed in an inert liquid and then performing spin drying. Whether to use the second rinse liquid or the inert liquid can be determined in consideration of the line width of the resist pattern, for example.
- the process manager visualizes and displays the operation status of the development processing device (DEV) and the keyboard on which the command input operation is performed in order to manage the development processing device (DEV).
- User interface 61 consisting of a display etc. is connected!
- the control unit 60 also includes a control program for realizing various processes executed by the development processing device (DEV) under the control of the control unit 60, and various configurations of the development processing device according to the processing conditions.
- the recipe may be stored in a hard disk or semiconductor memory, or may be set at a predetermined position in the storage unit 62 while being stored in a portable storage medium such as a CDROM or DVD. .
- the recipe may be appropriately transmitted from another device, for example, via a dedicated line.
- the first development processing method includes a development processing step A with a developing solution, a rinsing processing step B with a first rinse solution, application of a curing chemical solution, and a resist pattern by ultraviolet irradiation processing. It is performed in the order of the curing process C and the spin drying process D.
- the second development processing method includes a development processing step A with a developer, a resist pattern curing processing step C by applying a chemical solution for curing and an ultraviolet irradiation treatment, and a rinsing with a first rinse solution. It is performed in the order of processing step B and spin drying step D.
- the development reaction is stopped by supplying the first rinse solution
- the second development processing method the supply of the curing chemical solution is stopped.
- the resist residue (development defect) is removed by the rinse treatment step B with the first rinse liquid while suppressing the occurrence of precipitation defects, the LER deterioration and CD fluctuation.
- the second development processing method even if a deposition defect occurs on the wafer W due to the resist pattern curing process C, the defect is removed in the subsequent rinse process B using the first rinse liquid. be able to. It is common to the first and second development processing methods that curing of the resist pattern can suppress the occurrence of no-turning.
- a rinsing treatment with pure water may be performed after the resist pattern curing treatment step C, followed by spin drying.
- the second development processing method After rinsing with a rinsing solution, rinsing with pure water may be performed, and then spin drying step D may be performed. This is because, since the resist pattern is cured, the pattern collapse hardly occurs even if spin drying is performed after the rinse treatment with pure water.
- the third development processing method includes a development processing step A using a developer, a rinsing processing step B using a first rinse, a resist pattern applied by a curing chemical application and an ultraviolet irradiation treatment.
- the curing process C, the rinse process E with the second rinse liquid, and the spin drying process D are performed in this order.
- This third development processing method is used only when the surface tension of the second rinse liquid is smaller than that of the curing chemical liquid and the cleanliness is high.
- the fourth development processing method includes a development processing step A using a developer, a rinsing processing step B using a first rinse solution, application of a curing chemical solution and ultraviolet resist treatment. Pattern curing process C, resist pattern coating process F with inert liquid, and spin drying process D.
- the fifth development processing method includes a development processing step A with a developer, a resist pattern curing processing step C by applying a chemical solution for curing and an ultraviolet irradiation treatment, and a rinsing with a first rinse solution. It is performed in the order of treatment step B, rinse treatment step E with the second rinse liquid, and spin drying step D.
- This fifth development processing method is used only when the surface tension of the second rinse liquid is smaller than the surface tension of the first rinse liquid and the cleanliness is high.
- the sixth development processing method includes a development processing step A with a developer, a resist pattern curing processing step C by applying a chemical solution for curing and an ultraviolet irradiation treatment, and a rinsing with a first rinse solution. It is performed in the order of processing step B, resist pattern coating step F with inert liquid, and spin drying step D.
- a liquid having a low surface tension is supplied onto the wafer W before spin drying as compared with the first and second development processing methods.
- the effect of preventing the occurrence of pattern collapse is further enhanced as compared with the first and second development processing methods.
- the seventh development processing method includes a development processing step A with a developer, a resist pattern curing processing step C by applying a chemical solution for curing and an ultraviolet irradiation treatment, and a rinsing with a second rinse solution. It is performed in the order of processing step E and spin drying step D.
- the eighth development processing method includes a development processing step A using a developer, a resist pattern curing processing step C by applying a chemical solution for curing and an ultraviolet irradiation treatment, and a resist pattern using an inert liquid.
- the coating step F and the spin drying step D are performed in this order.
- the ninth development processing method includes a development processing step A with a developing solution, a rinsing processing step B with a first rinsing solution, a rinsing processing step E with a second rinsing solution, and a spin drying step. D in order.
- This ninth development processing method is used only when the surface tension of the second rinse liquid is smaller than the surface tension of the first rinse liquid and the cleanliness is high.
- the tenth development processing method is the development processing step A, the first Rinse treatment step B with rinse solution, resist pattern coating step F with inert liquid, and spin drying step D.
- the first to tenth developing methods an appropriate one is considered in consideration of the line width of the resist pattern and target characteristics (the number of precipitation defects, CD value, LER value, etc.). To be elected. From the viewpoint of improving the quality of the wafer W in total, it is preferable to use the third to sixth development methods. Other methods have the advantage that they can be processed in a short tact time while maintaining a specific quality. In the development processing method including the treatment with the first rinse solution, 99% or more of the resist residue can be removed. Also, by applying a resist pattern curing process or spin drying after supplying a liquid with low surface tension to the wafer W, a pattern with a resist pattern aspect ratio of 3.6 or more is formed (or the aspect ratio is equal to the resist pattern). The pitch (unit: ⁇ m) divided by 20 / ⁇ m or more is possible. That is, it is possible to prevent the pattern collapse of the resist pattern having a narrow line width.
- FIG. 5 shows a flowchart of the third development processing method
- FIG. 6 shows a flowchart of the sixth development processing method.
- the developer nozzle 11 is moved above the center of the wafer W, and the wafer W is rotated 1Z2 times or more, for example, one rotation while discharging the developer solution from the developer nozzle 11 in a strip shape.
- the developer is applied to the entire surface of the wafer W to form a developer paddle (STEP 2). It is also possible to discharge the developer while scanning the developer nozzle 11 in the Y direction.
- the wafer W is rotated by the spin chuck 2 and the developer is shaken off (STEP 5).
- the first rinsing liquid is discharged from the first rinsing liquid nozzle 13 to perform rinsing with the first rinsing liquid (STEP 6).
- the rotation speed of the wafer W in STEP 6 can be set to 500 to 2000 rpm, for example.
- the rinsing process with the first rinsing liquid may be performed by scanning the first rinsing liquid nozzle 13 in the Y direction while rotating the wafer W.
- the surface of the wafer W is maintained wet with the first rinse liquid, the first rinse liquid nozzle 13 is retracted outside the cup CP, and the chemical liquid nozzle 12a Move W to the upper center of W (STEP 7).
- the wafer W is rotated 1Z2 times or more, for example, 1 rotation while discharging the curing chemical solution from the chemical solution nozzle 12a in a strip shape.
- the curing chemical solution is applied to the entire surface of the wafer W to form a curing chemical solution paddle (STEP 8).
- the ultraviolet lamp 42 is turned on to attach the ultraviolet irradiation unit 12b to the wafer.
- a predetermined number of scans are made between the ends of W in the Y direction (STEP 9).
- the cross-linking agent is bonded to the resist film on the surface of the resist film, and the resist film is cured.
- the chemical solution nozzle 12a and the ultraviolet irradiation unit 12b are retracted outside the cup CP, and the second rinse solution nozzle 14 is positioned above the center of the wafer W ( STEP 10).
- the wafer W is rotated at a predetermined number of revolutions, the curing chemical is spun off from the wafer W, and at the same time, the second rinse liquid is supplied to the wafer W, and the wafer W is rinsed with the second rinse liquid ( STEP11).
- the second rinse liquid nozzle 14 May be scanned in the Y direction.
- the wafer W is rotated to spread the rinsing liquid, and the rinsing liquid is shaken off to dry the wafer W (STEP 12).
- the rotation speed of the wafer W is set to more than 300 rpm and less than lOOOOrpm, for example, 500 rpm, 5 to 15 seconds, for example, 10 seconds, and then the rotation speed of the wafer W is set to 1000 to 40 OOrpm, for example, 2000 rpm. And 10 to 20 seconds, for example, 15 seconds is preferable. In this manner, the occurrence of pattern collapse can be effectively suppressed by sprinkling off the rinse liquid from the wafer W and spin drying the wafer W.
- the wafer W thus dried is lifted onto the spin chuck 2 by the lift pins 5 and unloaded from the development processing device (DEV) by the transfer arm T of the wafer transfer device (STEP 13). Processing is performed.
- DEV development processing device
- a sixth development processing method will be described.
- a wafer W that has been exposed in a predetermined pattern, and has been subjected to post exposure beta processing and cooling processing is transported to the position just above the cup CP by the transport arm T of the wafer transport device, and then moved up and down. It is transferred to the pin 5, placed on the spin chuck 2, and vacuum-sucked (STEP 101).
- the developer nozzle 11 is moved above the center of the wafer W, and the wafer W is rotated 1Z2 times or more, for example, one rotation while discharging the developer solution from the developer nozzle 11 in a strip shape.
- the developer is applied to the entire surface of the wafer W to form a developer paddle (STEP 102). It is also possible to discharge the developer while scanning the developer nozzle 11 in the Y direction.
- the wafer W is rotated by the spin chuck 2 and the developer is shaken off (STEP 105).
- the developer is shaken so that a thin film of the developer remains on the surface of the wafer W.
- the wafer W is rotated 1Z2 times or more, for example, 1 rotation while discharging the chemical solution for curing from the chemical solution nozzle 12a.
- the curing chemical is applied to the entire surface of the wafer W.
- a curing chemical paddle is formed (STEP 106).
- the ultraviolet lamp 42 is turned on to attach the ultraviolet irradiation unit 12b to the wafer.
- a predetermined number of scans are made between the ends of W in the Y direction (STEP 107).
- the crosslinking agent is bonded to the resist film on the surface of the resist film, and the resist film is cured.
- the chemical solution nozzle 12a and the ultraviolet irradiation unit 12b are retracted outside the cup CP, and the first rinse solution nozzle 13 is positioned above the center of the wafer W (STEP 108).
- the wafer W is rotated at a predetermined number of revolutions, and the curing chemical is spun off from the wafer W.
- the first rinse liquid is discharged from the first rinse liquid nozzle 13, and the first rinse liquid is discharged.
- a rinse treatment is performed (STEP 109).
- the surface of the wafer W is wet with the first rinse liquid (the state in which the paddle of the first rinse liquid is formed, or the first The first rinse liquid nozzle 13 is retracted outside the cup CP, and the second rinse liquid nozzle 14 is positioned above the center of the wafer W (STEP 110). .
- an inert liquid is supplied to the wafer W (STEP 111). Since the specific gravity of the inert liquid is larger than that of the first rinse liquid, it settles below the first rinse liquid and is replaced with the first rinse liquid, and the resist pattern is immersed in the inert liquid. At this time, the first rinse liquid is pushed out by the wafer W force.
- the Ueno and W are rotated at a predetermined number of rotations to expand and shake the inert liquid. Then, the wafer W is dried (STEP 112). The wafer W thus dried is lifted onto the spin chuck 2 by the lift pins 5 and the developing device (DEV) force is also unloaded by the transfer arm T of the wafer transfer device (STEP 113), and subjected to post-beta processing.
- DEV developing device
- the curing chemical is supplied to the wafer W while shaking off the developer from the wafer W, but a developer paddle is formed that does not rotate the wafer W. Then, the chemical liquid nozzle 12a is scanned between the Y direction ends of the wafer W while discharging the chemical liquid from the chemical liquid nozzle 12a, so that the developer is replaced with the chemical liquid for curing to form the chemical liquid paddle for curing. Also good.
- the rinse treatment with pure water may be performed in the previous process.
- the wafer W may be processed in the order of formation of a developer paddle, rinsing with pure water, hardening with a curing chemical, rinsing with pure water, rinsing with the first rinsing liquid, and spin drying. ,.
- the present invention is not limited to this, and a liquid crystal display device (if a substrate on which a fine resist pattern is formed) It can also be applied to development processing of other substrates such as LCD) substrates. Further, a combination of the constituent elements of the above-described embodiment as appropriate or a part of the constituent elements of the above-described embodiment is partially removed without departing from the scope of the present invention.
- the present invention is effective as a technique for preventing the occurrence of pattern collapse during the development processing of a resist film.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims
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JP2004-238488 | 2004-08-18 | ||
JP2004238488A JP2006059918A (ja) | 2004-08-18 | 2004-08-18 | 現像処理方法 |
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JP4859245B2 (ja) * | 2007-10-29 | 2012-01-25 | 東京エレクトロン株式会社 | 基板処理装置 |
US20130040246A1 (en) * | 2011-08-09 | 2013-02-14 | Tokyo Electron Limited | Multiple chemical treatment process for reducing pattern defect |
JP6610285B2 (ja) * | 2016-01-22 | 2019-11-27 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理システム並びに基板処理方法 |
JP6712482B2 (ja) * | 2016-03-31 | 2020-06-24 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
TWI833688B (zh) * | 2016-12-19 | 2024-03-01 | 日商東京威力科創股份有限公司 | 顯像處理方法、電腦記憶媒體及顯像處理裝置 |
Citations (8)
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JPS63229715A (ja) * | 1987-03-19 | 1988-09-26 | Fujitsu Ltd | レジストハ−ドニング方法 |
JPH05326392A (ja) * | 1992-05-14 | 1993-12-10 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH06275514A (ja) * | 1993-01-22 | 1994-09-30 | Soltec:Kk | レジストパターン形成方法 |
JPH0945651A (ja) * | 1995-07-26 | 1997-02-14 | Toshiba Corp | レジストの洗浄装置及び現像装置 |
JPH11154634A (ja) * | 1997-11-20 | 1999-06-08 | Sony Corp | 半導体装置の製造方法及び製造装置 |
JP2000089477A (ja) * | 1998-09-11 | 2000-03-31 | Nec Corp | レジストパターンの形成方法 |
JP2003178946A (ja) * | 2001-12-10 | 2003-06-27 | Tokyo Electron Ltd | 現像処理方法及び現像処理装置 |
JP2003524213A (ja) * | 2000-02-26 | 2003-08-12 | シップレーカンパニー エル エル シー | 欠陥の削減方法 |
-
2004
- 2004-08-18 JP JP2004238488A patent/JP2006059918A/ja active Pending
-
2005
- 2005-07-29 WO PCT/JP2005/013931 patent/WO2006018960A1/ja active Application Filing
- 2005-08-02 TW TW094126234A patent/TW200612481A/zh unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63229715A (ja) * | 1987-03-19 | 1988-09-26 | Fujitsu Ltd | レジストハ−ドニング方法 |
JPH05326392A (ja) * | 1992-05-14 | 1993-12-10 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH06275514A (ja) * | 1993-01-22 | 1994-09-30 | Soltec:Kk | レジストパターン形成方法 |
JPH0945651A (ja) * | 1995-07-26 | 1997-02-14 | Toshiba Corp | レジストの洗浄装置及び現像装置 |
JPH11154634A (ja) * | 1997-11-20 | 1999-06-08 | Sony Corp | 半導体装置の製造方法及び製造装置 |
JP2000089477A (ja) * | 1998-09-11 | 2000-03-31 | Nec Corp | レジストパターンの形成方法 |
JP2003524213A (ja) * | 2000-02-26 | 2003-08-12 | シップレーカンパニー エル エル シー | 欠陥の削減方法 |
JP2003178946A (ja) * | 2001-12-10 | 2003-06-27 | Tokyo Electron Ltd | 現像処理方法及び現像処理装置 |
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