TW200612481A - Development processing method - Google Patents

Development processing method

Info

Publication number
TW200612481A
TW200612481A TW094126234A TW94126234A TW200612481A TW 200612481 A TW200612481 A TW 200612481A TW 094126234 A TW094126234 A TW 094126234A TW 94126234 A TW94126234 A TW 94126234A TW 200612481 A TW200612481 A TW 200612481A
Authority
TW
Taiwan
Prior art keywords
prescribed
wafer
liquid
inert liquid
resist film
Prior art date
Application number
TW094126234A
Other languages
English (en)
Inventor
Junichi Kitano
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200612481A publication Critical patent/TW200612481A/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW094126234A 2004-08-18 2005-08-02 Development processing method TW200612481A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004238488A JP2006059918A (ja) 2004-08-18 2004-08-18 現像処理方法

Publications (1)

Publication Number Publication Date
TW200612481A true TW200612481A (en) 2006-04-16

Family

ID=35907350

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094126234A TW200612481A (en) 2004-08-18 2005-08-02 Development processing method

Country Status (3)

Country Link
JP (1) JP2006059918A (zh)
TW (1) TW200612481A (zh)
WO (1) WO2006018960A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI637434B (zh) * 2016-03-31 2018-10-01 斯庫林集團股份有限公司 基板處理方法及基板處理裝置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4859245B2 (ja) * 2007-10-29 2012-01-25 東京エレクトロン株式会社 基板処理装置
US20130040246A1 (en) * 2011-08-09 2013-02-14 Tokyo Electron Limited Multiple chemical treatment process for reducing pattern defect
JP6610285B2 (ja) * 2016-01-22 2019-11-27 東京エレクトロン株式会社 基板処理装置及び基板処理システム並びに基板処理方法
KR102608177B1 (ko) * 2016-12-19 2023-11-30 도쿄엘렉트론가부시키가이샤 현상 처리 방법, 컴퓨터 기억 매체 및 현상 처리 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229715A (ja) * 1987-03-19 1988-09-26 Fujitsu Ltd レジストハ−ドニング方法
JPH05326392A (ja) * 1992-05-14 1993-12-10 Fujitsu Ltd 半導体装置の製造方法
JP2745443B2 (ja) * 1993-01-22 1998-04-28 株式会社ソルテック レジストパターン形成方法
JPH0945651A (ja) * 1995-07-26 1997-02-14 Toshiba Corp レジストの洗浄装置及び現像装置
JPH11154634A (ja) * 1997-11-20 1999-06-08 Sony Corp 半導体装置の製造方法及び製造装置
JP2000089477A (ja) * 1998-09-11 2000-03-31 Nec Corp レジストパターンの形成方法
TW558736B (en) * 2000-02-26 2003-10-21 Shipley Co Llc Method of reducing defects
JP2003178946A (ja) * 2001-12-10 2003-06-27 Tokyo Electron Ltd 現像処理方法及び現像処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI637434B (zh) * 2016-03-31 2018-10-01 斯庫林集團股份有限公司 基板處理方法及基板處理裝置

Also Published As

Publication number Publication date
JP2006059918A (ja) 2006-03-02
WO2006018960A1 (ja) 2006-02-23

Similar Documents

Publication Publication Date Title
CN105164789B (zh) 抗蚀剂图案形成方法、抗蚀剂潜像形成装置、抗蚀剂图案形成装置和抗蚀剂材料
TW200612481A (en) Development processing method
TW200707125A (en) Immersion lithography and treatment method thereof
TW200631073A (en) Method of processing substrate, exposure device and method of manufacturing device
TWI266357B (en) Pattern forming method and method for manufacturing semiconductor device
TW200700933A (en) Immersion lithography and treatment system thereof
TW200618058A (en) Immersion photolithography with megasonic rinse
JP2008102348A (ja) 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
TW200625026A (en) Substrate processing method, method of exposure, exposure device and device manufacturing method
US20190056666A1 (en) Developing Method, Developing Apparatus, and Computer-Readable Recording Medium
JPS589143A (ja) 金属イオンを含まないフオ−トレジスト現像液組成物
JP2011176218A5 (zh)
TW200836025A (en) Treatment liquid for developed resist substrate and treating method for resist substrate using therewith
WO2001099161A3 (en) Method of reducing post-development defects in and around openings formed in photoresist by use of multiple development/rinse cycles
JP4519234B2 (ja) 物品表面の清浄化方法およびそのための清浄化装置
JP2000090414A (ja) レジストの処理方法
WO2002073688A3 (en) Lithography method for forming semiconductor devices on a wafer and apparatus
JPH05136033A (ja) パターン形成方法及びその装置
CN104570626A (zh) 一种改善光掩膜关键尺寸均匀性和针孔缺陷率的方法
KR20010111778A (ko) 기체 상태의 아민 처리공정을 이용한 포토레지스트 패턴형성방법
CN103123444A (zh) 一种光刻工艺的显影方法
JP4730533B2 (ja) 基材処理方法
US20060292500A1 (en) Cure during rinse to prevent resist collapse
TWI825960B (zh) 半導體裝置的製造方法
KR20060047051A (ko) 포토레지스트 패턴 형성 방법