WO2005116764A1 - ポジ型感光性樹脂組成物並びに得られる層間絶縁膜およびマイクロレンズ - Google Patents
ポジ型感光性樹脂組成物並びに得られる層間絶縁膜およびマイクロレンズ Download PDFInfo
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- WO2005116764A1 WO2005116764A1 PCT/JP2005/009543 JP2005009543W WO2005116764A1 WO 2005116764 A1 WO2005116764 A1 WO 2005116764A1 JP 2005009543 W JP2005009543 W JP 2005009543W WO 2005116764 A1 WO2005116764 A1 WO 2005116764A1
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- positive photosensitive
- photosensitive resin
- resin composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
Definitions
- the present invention relates to a positive photosensitive resin composition. More specifically, the present invention relates to a positive photosensitive resin composition suitable for use as a display material.
- a display element such as a thin film transistor (TFT) type liquid crystal display element and an organic EL element is provided with a patterned electrode protective film, a flattening film, an insulating film and the like.
- a photosensitive resin composition is widely used, which is characterized in that the number of steps required to obtain a pattern shape is small and that it has sufficient flatness.
- These films have a wide process margin that can form patterns under various process conditions according to the intended use, such as process resistance such as heat resistance, solvent resistance, and long-term firing resistance, adhesion to the substrate, and the like.
- process resistance such as heat resistance, solvent resistance, and long-term firing resistance, adhesion to the substrate, and the like.
- various characteristics such as high sensitivity, high transparency, and less unevenness of the film after development are required.
- 1,2-quinonediazide conjugates are often added as photosensitizers to impart "photosensitivity".
- Photosensitizers used for interlayer insulating films and microlens materials must be dissolved in a safe solvent such as propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and ethyl lactate that has a low impact on the global environment and work environment. , And high transmittance of visible light after ultraviolet irradiation.
- sensitivity is one of the important characteristics among the above required characteristics. Increasing the sensitivity has led to a significant reduction in production time in industrial production, and is one of the very important characteristics as the demand for liquid crystal displays has increased significantly in recent years. However, with conventional materials, sensitivity was satisfactory. The ability to improve the sensitivity by increasing the solubility of the polymer in the material in the alkaline developer. This method has its limitations, and unexposed parts also dissolve, reducing the residual film ratio. On large substrates V, which leads to film unevenness, has the following drawbacks.
- Patent Document 1 Japanese Patent Application Laid-Open No. 4-21255
- Patent Document 2 JP-A-9-006000
- Patent document 3 JP-A-8-044403
- An object of the present invention is to provide a coating film that is free from foreign matter, has excellent storage stability, is highly sensitive, has a small degree of film loss during development, can form a coating film, and has a low force when the coating film is heat-treated.
- An object of the present invention is to provide a positive photosensitive resin composition having high t characteristics.
- Another object of the present invention is to provide an interlayer insulating film and a micro lens obtained by using the positive photosensitive resin composition.
- a positive photosensitive resin composition comprising the following components (A), (B) and a solvent:
- Component (A) At least one of unsaturated carboxylic acids and derivatives thereof is an essential monomer. At least one kind of alkali-soluble resin which is a kind of copolymerized polymer; and component (B): a 1,2-quinonediazide compound represented by the formula (1).
- D to D each independently represent a hydrogen atom or a 1,2-quinonediazide group
- Is an organic group having N represents an integer of 1 to 3, and R represents a monovalent organic group.
- the component (A) is a polymer obtained by copolymerizing at least one of unsaturated carboxylic acids and derivatives thereof with an N-substituted maleimide as an essential monomer type, and is at least one type of alkali-soluble resin.
- the positive photosensitive resin composition according to any one of 1 to 3,
- k represents an integer of 2 to 10
- m represents an integer of 0 to 4
- R 1 represents a k-valent organic group.
- the solvent is a mixed solvent using at least one solvent having a boiling point of 200 ° C. to 250 ° C.
- the positive photosensitive resin composition according to any one of 1 to 8 above,
- a pattern-formed coating obtained by applying the positive photosensitive resin composition according to any one of the above 1 to 9 onto a substrate, exposing through a mask, and developing. film,
- the positive photosensitive resin composition of the present invention has high sensitivity, a small degree of film loss during development, can form a coating film, and a cured film obtained by heat-treating the coating film has high transparency.
- the positive photosensitive resin composition of the present invention has no storage of foreign matter and has excellent storage stability! ⁇ ⁇ Features. Therefore, the composition of the present invention can be suitably used as a material for an interlayer insulating film or a microlens.
- the positive photosensitive resin composition of the present invention is characterized by containing the following components (A) and (B) and a solvent.
- Component (B) a 1,2-quinonediazide compound represented by the formula (1).
- D to D each independently represent a hydrogen atom or a 1,2-quinonediazide group
- Is an organic group having N represents an integer of 1 to 3, and R represents a monovalent organic group.
- the alkali-soluble resin used in the positive photosensitive resin composition of the present invention is a polymer obtained by copolymerizing at least one of unsaturated carboxylic acid and its derivative as an essential monomer (hereinafter referred to as a specific copolymer). At least one kind of alkali-soluble resin.
- the alkali-soluble resin used in the present invention has a property of being soluble in an alkaline solution among specific copolymers.
- the component (A) is composed of one or more alkali-soluble resins selected from specific copolymers soluble in an alkaline solution.
- the specific copolymer is a polymer having a number average molecular weight (hereinafter simply referred to as a number average molecular weight) of 2,000 to 30,000 in terms of polystyrene. More preferably, it is from 2,500 to 1,500, particularly preferably ⁇ 3,000 to 10,000.
- the shape of the obtained pattern may be defective, the residual film ratio of the pattern may be reduced, or the heat resistance of the pattern may be reduced.
- the number average molecular weight exceeds 30,000, the coating properties of the photosensitive resin composition May be defective, the developability may be reduced, resulting in peeling development, the shape of the resulting pattern may be defective, or the solubility in organic solvents may be reduced.
- a residual film may exist between patterns of 50 m or less, and the resolution may be reduced.
- unsaturated carboxylic acid is not particularly limited, and specific examples include acrylic acid, methacrylic acid, itaconic acid, maleic acid, fumaric acid, and the like. .
- the monomer species for obtaining the specific copolymer at least one of these unsaturated carboxylic acids may be used in combination of two or more.
- the proportion occupied by the unsaturated carboxylic acid is preferably 1 to 30% by mass, more preferably 3 to 25% by mass, and most preferably 5 to 30% by mass of the total amount of the monomers used to obtain the specific copolymer. -20% by mass. If the amount is less than 1% by mass, the solubility in the alkali developer becomes insufficient. If the amount exceeds 30% by mass, the solubility in the alkali developer is too high. May decrease.
- an unsaturated carboxylic acid derivative can be used or used as a monomer species for obtaining the specific copolymer.
- alkyl esters such as methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, sec-butyl methacrylate, and t-butyl methacrylate, methyl acrylate, isopropyl acrylate, and the like.
- Cyclic alkyl esters such as alkyl esters, cyclohexyl methacrylate, 2-methylcyclohexyl methacrylate, dicyclopenta-loxyshethyl methacrylate, isobornyl methacrylate, phenyl methacrylate, benzyl methacrylate
- Diaryl esters such as acetyl esters such as ethyl maleate, getyl fumarate, and getyl itaconate
- Relate include hydroxy shea alkyl esters such as.
- unsaturated carboxylic acid derivatives include glycidyl acrylate, daricidyl methacrylate, glycidyl a-ethyl acrylate, glycidyl an-n-propyl acrylate, glycidyl an-butyl acrylate, 3,4-epoxybutyl acrylate, methacrylic acid Acid-3,4-epoxybutyl, acrylic acid-6,7-epoxyheptyl, methacrylic acid-6,7-epoxyheptyl, ⁇ -ethylacrylic acid 6,7-epoxyheptyl, o vinylbenzylglycidyl ether, m And benzyl glycidyl ether and p-vinyl benzyl glycidyl ether.
- epoxy group-containing unsaturated carboxylic esters such as glycidyl methacrylate, 6,7 epoxy heptyl methacrylate, o-benzylbenzyl glycidyl ether, m-butylbenzyl glycidyl ether and p-benzylbenzylglycidyl ether This is preferable because the contraction of the force-hardened film can be reduced.
- an ethylenic conjugate copolymerizable with unsaturated rubonic acid and its derivative can also be used as a monomer species for obtaining the specific copolymer.
- an ethylenic compound include cyclohexyl maleimide, phenol maleimide, methyl maleimide, ethyl maleimide, styrene, ⁇ -methyl styrene, m-methyl styrene, p-methyl styrene, butyl toluene, p —Methoxystyrene, p-hydroxystyrene, acrylonitrile, methacrylonitrile, vinyl chloride, vinylidene chloride, acrylamide, methacrylamide, vinyl acetate, 1,3-butadiene, isoprene, 2,3-dimethyl-1,3— Butadiene, and the like.
- ethylenic conjugates can be introduced for the purpose of adjusting the solubility, hydrophobicity, etc. of the specific copolymer and controlling the molecular weight.
- ⁇ -substituted maleimides such as cyclohexylmaleimide, phenylmaleimide, methylmaleimide, and ethylmaleimide are preferred from the viewpoint of metaphysical properties! / ⁇ .
- the ratio of ethylenically I ⁇ was occupied, of the total amount of the monomer species used for obtaining the specific copolymer is preferably 5 to 50 mass 0/0, more preferably 15 to It is 45% by mass, more preferably 20 to 40% by mass.
- the amount of the ethylenic conjugate is 5% by mass or less, film shrinkage due to thermal decomposition of the cured film, which is greatly reduced during development, may be large.
- the amount of the ethylenic conjugate is 50% by mass or more, the residue during development may increase.
- the specific copolymer is an unsaturated carboxylic acid derivative of 1 to 30% by mass of the total amount of the monomer species used to obtain the specific copolymer, and the remainder is an unsaturated carboxylic acid derivative.
- Certain compounds include 1 to 30% by mass of an unsaturated carboxylic acid, 5 to 50% by mass of an ethylenic compound, and the remainder is an unsaturated carboxylic acid derivative.
- the method for obtaining the specific copolymer used in the present invention is not particularly limited. Generally, it is produced by radically polymerizing a monomer mixture containing a monomer species used for obtaining the above-mentioned specific copolymer in a polymerization solvent. If necessary, polymerize the monomer mixture while protecting the functional groups of the specific monomer, and then perform deprotection treatment.
- the polymerization temperature at that time is not particularly limited as long as the monomer is polymerized, but it is preferable. Alternatively, the temperature is 50 ° C to 110 ° C.
- polymerization solvent examples include alcohols such as methanol, ethanol, propanol and butanol, ethers such as tetrahydrofuran and dioxane, aromatic hydrocarbons such as benzene, toluene and xylene; N, N dimethylformamide Polar solvents such as N-methyl-2-pyrrolidone; esters such as ethyl acetate, butyl acetate and ethyl lactate; methyl 3-methoxypropionate; methyl 2-methoxypropionate; ethyl 3-methoxypropionate; Alkoxy esters such as methyl methoxypropionate, ethyl 3 ethoxypropionate, and ethyl 2-ethoxypropionate, ethylene glycol dimethyl ether, diethylene glycolone resin methinoleate ethere, diethylene glycolone retinoline ether, diethylene glycol alcohol (Di) glycol dialkyl ethers such as
- Cyclohexanone alkyl ether esters may be mentioned ketones such as heptanone methyl isobutyl ketone, the 2-.
- ketones such as heptanone methyl isobutyl ketone, the 2-.
- propylene glycol monomethyl ether propylene glycol monomethyl ether acetate
- ethyl lactate ethyl lactate
- the component (A) (alkali-soluble resin) used in the positive photosensitive resin composition of the present invention preferably has a low residual monomer content.
- residual monomer refers to an unreacted substance that remains after the copolymerization of each monomer species to obtain a specific copolymer and also has the power of each monomer species.
- the amount of these residual monomers can be expressed as the residual monomer ratio.
- the residual monomer ratio can be represented by a ratio (% by mass) of the total mass of each residual monomer to the total mass of each monomer used in the copolymerization reaction.
- the component (A) is an alkali-soluble resin having a plurality of specific copolymers
- the total mass of the monomer species used in the copolymerization of each specific copolymer is determined for each of the plurality of specific copolymers.
- the method for analyzing the amount of residual monomer can be confirmed, for example, by analyzing the copolymerized reaction solution using liquid chromatography or the like.
- the residual monomer ratio is preferably 2.5% by mass or less, more preferably 2.0% by mass or less, and even more preferably 1.5% by mass or less. If the residual monomer ratio exceeds 2.5% by mass, the electrical characteristics of the display device may be degraded.
- the method for reducing the residual monomer ratio in the alkali-soluble resin is not particularly limited.For example, a method such as reprecipitation, which is generally known in polymer synthesis, is performed, or the reaction is performed at the final stage of polymerization. A method of raising the temperature can be used.
- the component (B) used in the positive photosensitive resin composition of the present invention is a 1,2-quinonediazide conjugate having a specific structure and is represented by the formula (1).
- D to D each independently represent a hydrogen atom or a 1,2-quinonediazide group
- Is an organic group having N represents an integer of 1 to 3, and R represents a monovalent organic group.
- n is an integer of 1 to 3
- R represents a monovalent organic group.
- R is not particularly limited. Specific examples thereof include a linear alkyl group such as a methyl group, an ethyl group, and a propyl group, and an alkyl group having a branched structure such as isopropyl, isobutyl, sec-butyl, and tert-butyl. And a kill group. Among these, an aliphatic group having carbon atoms of ⁇ to 10 is more preferable, and an alkyl group having 1 to 4 carbon atoms is more preferable.
- D to D each independently have a hydrogen atom or a 1,2-quinonediazide group
- At least one of D to D has a 1,2-quinonediazide group.
- the organic group having a 1,2-quinonediazide group is not particularly limited, but specific examples include a 1,2-benzoquinonediazido4sulfol group, and a 1,2-naphthoquinonediazide-5-group. Sulfol group, 1,2 naphthoquinonediazido 4sulfonyl group and the like. Of these, 1,2-naphthoquinonediazido-5-sulfol group and 1,2-naphthoquinonediazido-4-sulfol group are preferred from the viewpoint of transparency of the cured film.
- the component (B) used in the present invention is not particularly limited as long as it is a 1,2 quinonediazide conjugate represented by the formula (1). From the viewpoint of the film ratio and the transparency, a compound that represents an R force S methyl group or an ethyl group and n is 1 or 2 is preferable. More preferably, it is a compound represented by the following formula (3), which represents an R-methyl group and n is 2.
- D to D each independently represent a hydrogen atom or a 1,2-quinonediazide group
- the method for obtaining the 1,2 quinonediazide conjugate represented by the formula (1) used in the present invention is not particularly limited. Generally, the following equation (4)
- a compound having a 1,2-quinonediazide group in general, a salt-containing compound having a 1,2-quinonediazide group is widely used.
- an esterification reaction of a compound represented by the formula (4) with a 1,2 quinone diazide sulfol halide such as a 1,2 naphthoquinone diazide 5 sulfoyl-cure ride or a 1,2 naphthoquinone diazide 4 sulfo-yc-clide, yields a compound of the formula
- a 1,2-quinonedi azide conjugate represented by (1) is obtained.
- the average condensation rate of the reaction [(the number of esterified phenolic hydroxyl groups Z the number of phenolic hydroxyl groups before the reaction) x 100] is required to be 5 to 100%. This average condensation rate is preferably 10 to 98%, more preferably 20 to 95%. If the average condensation rate of the esterification reaction is 5% or less, a sufficient difference in solubility in the alkali developing solution between the exposed and unexposed areas cannot be obtained, and thus a pattern with good resolution cannot be obtained. There are cases.
- the content of the component (B) is preferably from 5 to L00 parts by mass, more preferably from 10 to 50 parts by mass, per 100 parts by mass of the component (A). Parts by mass, more preferably 10 to 30 parts by mass. If the amount is less than 5 parts by mass, the difference in solubility of the positive photosensitive resin composition between the exposed part and the unexposed part in a developing solution becomes small, and patterning by development may be difficult. If the amount exceeds 100 parts by mass, the 1,2-quinonediazide compound is not sufficiently decomposed by short-time exposure, so that the sensitivity is lowered. Transparency may be reduced. [0027] Solvent>
- the solvent used in the present invention is not particularly limited as long as it dissolves the component (A), the component (B), and the components (C) to (F) described below.
- Such a solvent include ethylene glycol monomethyl ether, ethylene glycolone monoethylenoate ether, methinolesellosonolebut acetate, etinolesellosonolebutacetate, diethylene glycolonolemonomethinole ether, and diethylene glycol monomethyl ether ether.
- Glyconolemonoethyl ether ether propylene glycol, propylene glycolone monomethinole ether, propylene glycolone monomethineoleate enole acetate, propylene glycol olenopropionate enole acetate, propylene glycol monobutyl ether, propylene glycol monobutyl ether Acetate, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl 2-hydroxypropionate, 2-hydroxy 2-methyl Ethyl tylpropionate, ethyl ethoxyacetate, ethyl acetate hydroxy, methyl 2-hydroxy-3-methylbutanoate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, Examples thereof include methyl
- propylene glycol monomethyl ether propylene glycol monomethyl ether acetate, 2-heptanone, ethyl lactate, butyl lactate, and cyclohexanone are preferable from the viewpoint of improving the leveling property of the coating film.
- the proportion of the solvent having a boiling point of 200 ° C. to 250 ° C. is 1 to 50% by mass, more preferably 5 to 40% by mass of the total solvent contained in the positive photosensitive resin composition. If the amount is 50% by mass or more, it may be difficult to obtain a good leveling property of the coating film, and if the amount is 1% by mass or less, the above-mentioned effects may not be obtained.
- boiling point in this specification means a standard boiling point at 1 atm.
- the solvent having a boiling point of 200 ° C to 250 ° C include N-methylpyrrolidone, ⁇ -butyrolactone, diethylene glycol monoethyl ether (ethyl carbitol), and diethylene glycol.
- examples thereof include coal monobutyl ether (butyl carbitol), acetoamide, and benzyl alcohol.
- the positive photosensitive resin composition of the present invention can contain a crosslinkable compound represented by the formula (2) as the component (C).
- k represents an integer of 2 to 10
- m represents an integer of 0 to 4
- R 1 represents a k-valent organic group.
- the component (C) is not particularly limited as long as it is a compound having a cyclohexene oxide structure represented by the formula (2). Specific examples thereof include the following formulas C1 and C2, and commercial products shown below.
- Eporide GT-401 Eporide GT-401, GT-403, GT-301, GT-302, Celoxide 2021, Celloxide 3000 (trade name, manufactured by Daiceli Gakugaku Kogyo Co., Ltd.) and alicyclic epoxy resins.
- a certain Denacol EX-252 (trade name, manufactured by Nagase Chemmutex Co., Ltd.) CY175, CY177, CY179 (trade name of CIBA-GEIGY A.G), Araldite CY-182, CY-192, CY-184 (trade name of CIBA-GEIGY A.G), Epiclon 200 , 400 (or more, trade names made by Dainippon Ink and Chemicals, Inc.), Epikote 871, 872 (or more, trade names made by Yuka Shell Epoxy Co., Ltd.), ED-5661, ED-5662 (more than And Celanese Coatings Co., Ltd.). These crosslinkable conjugates can be used alone or in combination of two or more.
- process resistance such as heat resistance, solvent resistance, and long-time firing resistance, and transparency are also represented by formulas C1 and C2, which also have a cyclohexene oxide structure.
- C1 and C2 which also have a cyclohexene oxide structure.
- the amount of the component (C) to be added is 3 to 50 parts by mass, preferably 7 to 40 parts by mass, more preferably 10 to 30 parts by mass, per 100 parts by mass of the component (A).
- the content of the cross-linkable compound is small, the density of cross-links formed by the cross-linkable compound is not sufficient, so that the heat resistance after pattern formation, the solvent resistance, the resistance to long-time firing, and the like are improved. Effect may not be obtained.
- the amount exceeds 50 parts by mass an uncrosslinked crosslinkable compound is present, and the heat resistance after pattern formation, the solvent resistance, the resistance to long-time firing, and the like are reduced, and the photosensitive resin composition The storage stability of the product may be degraded.
- the positive photosensitive resin composition of the present invention may contain a surfactant for the purpose of improving coatability.
- a surfactant for the purpose of improving coatability.
- Such surfactants are not particularly limited, such as a fluorine-based surfactant, a silicone-based surfactant, and a non-one-based surfactant.
- commercially available products such as those manufactured by Sumitomo 3LEM, Dainippon Ink and Chemicals, and Asahi Glass Co., Ltd. can be used, and these commercially available products can be easily obtained.
- component (D) one or more of the above surfactants can be used in combination.
- fluorine-based surfactants are preferable because of the remarkable effect of improving the coating property.
- fluorine-based surfactant include F-top EF301, EF303, EF352 (trade names, manufactured by Tochem Products), Megafac F171, F173, R-30 (Dainippon Ink and Chemicals, Inc.) Brand name), Florard FC430, FC431 (trade name, manufactured by Sumitomo 3LM Co., Ltd.), Asahigard AG710, Surflon S-382, SC101, SC102, SC103, SC104, SC105, SC106 (made by Asahi Glass Co., Ltd.) Powers such as (product name) are not limited to these.
- the amount of the component (D) in the positive photosensitive resin composition of the present invention is 0.01 to 5 parts by mass, preferably 0.01 to 3 parts by mass, per 100 parts by mass of the component (A). Parts, more preferably 0.01 to 2 parts by mass. If the amount of the surfactant is more than 5 parts by mass, the coating film tends to be uneven. If the amount is less than 0.01 parts by mass, the effect of improving the coating properties may not be obtained.
- the positive photosensitive resin composition of the present invention may contain an adhesion promoter for the purpose of improving the adhesion to the substrate after development.
- an adhesion promoter include chlorosilanes such as trimethylchlorosilane, dimethylvinylchlorosilane, methyldiphenylchlorosilane, and chloromethyldimethylchlorosilane; trimethylmethoxysilane, dimethylethoxysilane, methyldimethoxysilane, and dimethylvinylethoxysilane.
- Alkoxysilanes such as diphenyldimethoxysilane and phenyltriethoxysilane ; silazanes such as hexamethyldisilylsilylimidazole; butyltrichlorosilane ; ⁇ -clopropyl propyltrimethoxysilane; ⁇ -aminopropyltriethoxysilane; ⁇ -methacryloxypropyl Torimeto Kishishiran, gamma - glycidoxypropyltrimethoxysilane, ⁇ - ( ⁇ - Piberiji - Le) silane such as propyl trimethoxysilane Heterocyclic compounds such as benzotriazole, benzimidazole, indazole, imidazole, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzozoxazole, perazole, thioperacil, mercaptoimidazole, and
- the above-mentioned adhesion promoter is, for example, manufactured by Shin-Etsu Chemical Co., Ltd., manufactured by GE Toshiba Silicone Co., Ltd. ⁇ ⁇
- Commercially available compounds such as those manufactured by Toray Dowko Jung Co., Ltd. can also be used, and these commercially available compounds can be easily obtained.
- one or more of the above-mentioned adhesion promoters can be used in combination.
- the amount of these adhesion promoters to be added is generally 20 parts by mass or less, preferably 0.01 to 10 parts by mass, more preferably 0.5 to 10 parts by mass, per 100 parts by mass of the component (A). is there. If it is used in an amount of 20 parts by mass or more, the heat resistance of the coating film may be reduced, and if it is less than 0.1 part by mass, a sufficient effect of the adhesion promoter may not be obtained.
- the positive photosensitive resin composition of the present invention may contain a pigment, a dye, a storage stabilizer, a defoaming agent or a polyhydric phenol, It is OK to add a dissolution promoter such as rubonic acid!
- the positive photosensitive resin composition of the present invention is characterized by containing the component (A), the component (B) and a solvent.
- the present invention relates to a positive photosensitive resin composition containing the component (A), the component (B) and a solvent or, if necessary, one or more of the components (C) to (F).
- a solvent or, if necessary, one or more of the components (C) to (F).
- Preferable examples of the positive photosensitive resin composition in the present invention include: [1] 100 parts by mass of the component (A), 5 to 5 parts of the component (B): L00 parts by mass and a solvent.
- Positive photosensitive resin composition [1] 100 parts by mass of the component (A), 5 to 5 parts of the component (B): L00 parts by mass and a solvent.
- the above-mentioned [1] and the component (C) are 3 to 50 parts by mass of a positive photosensitive resin composition, and [3] The above-mentioned [2] and the component (D) are from 0.01 to 5 parts by mass.
- a positive photosensitive resin composition having a power of not more than 20 parts by mass of the above components [3] and (E) [5] Components of alkali-soluble resin (A)
- the component (B) of the 1,2-quinonediazide compound is 10 to 30 parts by mass
- the component (C) of the crosslinkable compound containing two or more epoxy groups is 10 to 30 parts by mass with respect to 100 parts by mass.
- the solid content concentration of the positive photosensitive resin composition of the present invention as described above is such that each component is uniformly dissolved. There is no particular limitation as long as it is understood. Usually, it is generally used in the range of 1 to 50% by mass. Further, for the purpose of adjusting the film thickness and applying to the conditions of the coating apparatus, it is also possible to adjust the solid concentration by diluting with a solvent.
- the positive photosensitive resin composition of the present invention comprises a component (A) and a component (B) or, if necessary, at least one of the components (C) to (F) in a solvent. It can be easily prepared by mixing them. At this time, the component (A) may be used as it is as a reaction solution obtained by copolymerizing the specific copolymer.
- the method for preparing the positive photosensitive resin composition is not particularly limited! However, for example, the component (A) (alkali-soluble resin) is dissolved in a solvent, and the solution of the component (B) (1 , 2-quinonediazide conjugate), component (C) (crosslinkable compound), component (D) (surfactant) and component (E) (adhesion promoter) at a predetermined ratio, and a uniform solution Method. Further, if necessary, component (F) may be added and mixed.
- the heated components may be mixed or partially heated during the mixing.
- the temperature of the solution is preferably lower than the boiling point of the solvent.
- the mixed and prepared positive photosensitive resin composition is preferably used after being filtered using a filter having a pore size of about 0.5 m.
- the positive photosensitive resin composition of the present invention thus obtained suppresses generation of foreign substances and has excellent storage stability.
- the positive photosensitive resin composition of the present invention can be spin-coated, flow-coated on a substrate such as a glass substrate, a silicon wafer, an oxide film, a nitride film, or a substrate coated with a metal such as aluminum, molybdenum or chromium.
- a substrate such as a glass substrate, a silicon wafer, an oxide film, a nitride film, or a substrate coated with a metal such as aluminum, molybdenum or chromium.
- a substrate such as a glass substrate, a silicon wafer, an oxide film, a nitride film, or a substrate coated with a metal such as aluminum, molybdenum or chromium.
- the developer used is not particularly limited as long as it is an aqueous alkaline solution.
- aqueous solutions of alkali metal hydroxides such as potassium hydroxide, sodium hydroxide, potassium carbonate, and sodium carbonate, tetramethylammonium hydroxide, tetraethylammonium hydroxide, and choline.
- alkali metal hydroxides such as potassium hydroxide, sodium hydroxide, potassium carbonate, and sodium carbonate
- tetramethylammonium hydroxide tetraethylammonium hydroxide
- choline examples include aqueous solutions of quaternary ammonium hydroxide and aqueous amine solutions such as ethanolamine, propylamine and ethylenediamine.
- the alkaline developer is generally an aqueous solution of 10% by mass or less, and preferably an aqueous solution of 0.1 to 3.0% by mass is used. Further, alcohols and surfactants can be added to the above-mentioned developer and used, and each of them is preferably 0.05 to 10 parts by mass with respect to 100 parts by mass of the developer.
- tetra-ethyl ammonium hydroxide -. ⁇ beam 0.1 to 2 38 weight 0/0 aqueous solution is generally used as a developer Fuotore resist
- photosensitive ⁇ composition of the present invention is also Using this solution, development can be performed without causing problems such as swelling.
- any of a puddle method, a dive method, a rocking immersion method and the like may be used.
- the development time is usually 15 to 180 seconds.
- the film is washed with running water for 20 to 90 seconds, and air-dried with compressed air, compressed nitrogen, or spin to remove moisture on the substrate and obtain a patterned coating film.
- the coating film on which this pattern is formed is irradiated with light such as ultraviolet rays using a high-pressure mercury lamp or the like, and the component (B) remaining in the turn-like coating film (1,2-quinonediazide compound) ) To improve the transparency of the coating film.
- the coating film is cured by heating using a hot plate, an oven, or the like (hereinafter, referred to as post beta), and has heat resistance, transparency, flattening property, low water absorption, and chemical resistance. And a coating film having an excellent relief pattern can be obtained.
- the condition of the post beta may be a temperature of 140 ° C to 250 ° C, a treatment for 5 to 30 minutes on a hot plate, and a treatment for 30 to 90 minutes in an oven.
- a desired cured film having a good pattern shape can be obtained.
- a desired microlens can be obtained by selecting a pattern shape.
- the positive photosensitive resin composition of the present invention has extremely high sensitivity and It is possible to form a coating film having a fine pattern with a very small degree of film reduction.
- the cured film obtained from this coating film has excellent heat resistance, solvent resistance, and transparency.
- this cured film can be suitably used as an interlayer insulating film, various insulating films, various protective films, and the like, and can be suitably used as a microlens by selecting a pattern shape.
- NBMA n-butyl methacrylate
- AIBN azobisisobutyronitrile
- PGMEA Propylene glycol monomethyl ether acetate
- MAA13.5g, CHMI35.3g, HE MA25.5g, MMA25.7g are used as monomer components constituting the specific copolymer
- AIBN5g is used as a radical polymerization initiator
- PGMEA 200g is used as a solvent
- the temperature is 60 °.
- Mn number average molecular weight
- Mw weight average molecular weight
- Table 1 shows the results.
- a room temperature gel permeation chromatography (GPC) device [Shodex (registered trademark) column (1 KF803L, 1 KF804L)] manufactured by JASCO Corporation was used, and THF was used as an elution solvent. The measurement was performed under the conditions of a flow rate of lmlZ and a column temperature of 40 ° C.
- Mn and Mw were polystyrene equivalent values.
- AA13.5 g, PHMI35.3 g, HEMA25.5 g, MMA23.7 g are used as the monomer components constituting the specific copolymer
- AIBN 5 g is used as the radical polymerization initiator
- PGMEA 150 g is used as the solvent at a temperature of 60 g.
- the reaction was carried out at a temperature of from 70 to 70 ° C to obtain a 40.0% by mass solution (P5) of the specific copolymer having Mn of 5,400 and Mw of 10,200.
- Table 1 shows the results. Mn and Mw were measured in the same manner as in Synthesis Example 1.
- Number average molecular weight (Mn) 4 100 4, 200 4, 100 5, 200 5, 400 Weight average molecular weight (Mw) 7, 600 7, 500 7, 700 9, 500 10, 200
- the photosensitizer, crosslinkable compound, surfactant, and adhesion aid used here are as follows.
- QD a compound synthesized by a condensation reaction of 1 mol of trisphenol represented by the following structure with 2.5 mol of 1,2-naphthoquinone-12-diazide-5-sulfonyl chloride.
- R30 Megafac R-30 manufactured by Dainippon Ink and Chemicals, Inc. (brand name)
- the positive photosensitive resin composition was applied on a silicon wafer using a spin coater, and then pre-beta was performed on a hot plate at a temperature of 110 ° C. for 120 seconds to form a coating film having a thickness of 1.75 ⁇ m.
- the film thickness was measured using Dektak 3ST manufactured by ULVAC.
- This coating film was irradiated with UV light having a light intensity of 5.5 mWZcm 2 at 365 nm for 5.5 hours at a wavelength of 365 mWZcm 2 through an ultraviolet irradiation device PLA-600FA manufactured by Canon Inc. through a test mask.
- TMAH 60 ⁇ m aqueous solution
- pre-beta was performed on a hot plate at a temperature of 110 ° C. for 120 seconds to form a coating film having a thickness of 1.75 m.
- This coating film was immersed in a 0.4% TMAH aqueous solution for 60 seconds, and then washed with running ultrapure water for 20 seconds. Then, by measuring the thickness of this film, the degree of film reduction of the unexposed portion due to development was evaluated. The film thickness in this evaluation was measured using Dektak 3ST manufactured by ULVAC Corporation.
- a positive-type photosensitive resin composition was applied on a quartz substrate using a spin coater, and pre-beta was performed on a hot plate at a temperature of 110 ° C for 120 seconds to form a coating film with a thickness of 1.75 ⁇ m. .
- This coating film was immersed in a 0.4% TMAH aqueous solution for 60 seconds, and then washed with running ultrapure water for 20 seconds.
- a contact exposure machine PLA-600S, manufactured by Canon Inc.
- the entire surface of the coating film was irradiated with ultraviolet light having a light intensity of 5.5 mWZcm 2 at 365 nm for 67 seconds (37 Omj / cm 2 ).
- Post-beta was performed by heating the coating film after UV irradiation at 230 ° C for 60 minutes to form a cured film with a thickness of 1.5 m.
- a UV-visible spectrophotometer SIMADZU UV-2550, manufactured by Shimadzu Corporation
- the wavelength was measured at a wavelength of 200 to 800 nm, and the transmittance of the cured film was evaluated to evaluate the transparency.
- the mixture was stirred in a constant temperature room at 23 ° C. for 50 hours, and then left for 1 hour.
- a pre-beta was performed on a hot plate at a temperature of 110 ° C for 120 seconds to form a 1.75 m-thick coating film. Confirmed in.
- the sample was evaluated as “ ⁇ ” when no foreign matter was generated in the coating film, and as “X” when the coating film was present.
- the presence or absence of foreign matter was checked for the items stored at a temperature of 20 ° C. for 3 months and the items stored for 6 months.
- the positive-type photosensitive resin composition using the photosensitive agent of the component (B) was prepared in a constant temperature chamber at 23 ° C as shown in Examples 1 to L1. Both after stirring for a period of time and after storage at -20 ° C for 3 months, the film exhibited excellent characteristics of low film loss, high sensitivity and high transmittance, and no generation of foreign matter. Furthermore, the positive photosensitive resin compositions of Examples 5 to 11 were excellent in storage stability with no foreign substances observed after storage for 6 months at a temperature of 20 ° C.
- the positive photosensitive resin composition of the present invention is a cured film that requires pattern formation, has high transparency and high sensitivity to prevent generation of foreign matter in the light-sensitive resin solution, and has a high sensitivity after development. It can be used to produce a cured film having good film unevenness.
- the positive photosensitive resin composition of the present invention is suitable as a material for forming a protective film, a flattening film, an insulating film, and the like in displays such as thin film transistor (TFT) liquid crystal display devices and organic EL devices.
- TFT thin film transistor
- an interlayer insulating film of a TFT a protective film of a color filter, a flat film, an uneven film under a reflective film of a reflective display, a microlens material, an insulating film of an organic EL element, and the like.
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Abstract
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KR1020067027245A KR101229381B1 (ko) | 2004-05-26 | 2005-05-25 | 포지티브형 감광성 수지조성물 및 이에 의해 얻어지는 층간절연막 및 마이크로렌즈 |
JP2006513910A JP4509107B2 (ja) | 2004-05-26 | 2005-05-25 | ポジ型感光性樹脂組成物並びに得られる層間絶縁膜およびマイクロレンズ |
CN200580015922.9A CN1954264B (zh) | 2004-05-26 | 2005-05-25 | 正型感光树脂组合物以及由其获得的层间绝缘膜和微透镜 |
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KR (1) | KR101229381B1 (ja) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011024545A1 (ja) * | 2009-08-24 | 2011-03-03 | 日産化学工業株式会社 | マイクロレンズ用感光性樹脂組成物 |
US8168371B2 (en) | 2007-01-22 | 2012-05-01 | Nissan Chemical Industries, Ltd. | Positive photosensitive resin composition |
US8828651B2 (en) | 2005-07-25 | 2014-09-09 | Nissan Chemical Industries, Ltd. | Positive-type photosensitive resin composition and cured film manufactured therefrom |
JP2016048305A (ja) * | 2014-08-27 | 2016-04-07 | 東京応化工業株式会社 | 層間絶縁膜形成用感光性樹脂組成物、層間絶縁膜及び層間絶縁膜の形成方法 |
WO2016088757A1 (ja) * | 2014-12-04 | 2016-06-09 | 日産化学工業株式会社 | ポジ型感光性樹脂組成物 |
Families Citing this family (3)
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CN101669069B (zh) * | 2007-05-17 | 2013-03-20 | 日产化学工业株式会社 | 感光性树脂和微透镜的制造方法 |
EP2302456B1 (en) * | 2008-07-16 | 2015-09-02 | Nissan Chemical Industries, Ltd. | Positive resist composition;patttern forming method; microlens and planarization film therefrom; solid-state imaging device, liquid crystal display device and led display device comprising the same |
US8674043B2 (en) | 2009-09-14 | 2014-03-18 | Nissan Chemical Industries, Ltd. | Photosensitive resin composition containing copolymer |
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JP2003195501A (ja) * | 2001-12-26 | 2003-07-09 | Fujifilm Arch Co Ltd | ポジ型感光性樹脂組成物 |
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JP3209754B2 (ja) * | 1991-02-28 | 2001-09-17 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
JPH07281428A (ja) * | 1994-04-07 | 1995-10-27 | Fuji Photo Film Co Ltd | ポジ型フオトレジスト組成物 |
CN1237400C (zh) * | 2001-09-27 | 2006-01-18 | Az电子材料(日本)株式会社 | 感光树脂组合物 |
JP3966282B2 (ja) * | 2002-04-18 | 2007-08-29 | 日産化学工業株式会社 | ポジ型感光性樹脂組成物およびパターン形成方法 |
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- 2005-05-25 CN CN200580015922.9A patent/CN1954264B/zh active Active
- 2005-05-25 JP JP2006513910A patent/JP4509107B2/ja active Active
- 2005-05-25 KR KR1020067027245A patent/KR101229381B1/ko active IP Right Grant
- 2005-05-25 WO PCT/JP2005/009543 patent/WO2005116764A1/ja active Application Filing
Patent Citations (3)
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JPH04365046A (ja) * | 1991-06-12 | 1992-12-17 | Japan Synthetic Rubber Co Ltd | 感放射線性樹脂組成物 |
JPH0728235A (ja) * | 1993-07-07 | 1995-01-31 | Japan Synthetic Rubber Co Ltd | 感放射線性樹脂組成物 |
JP2003195501A (ja) * | 2001-12-26 | 2003-07-09 | Fujifilm Arch Co Ltd | ポジ型感光性樹脂組成物 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8828651B2 (en) | 2005-07-25 | 2014-09-09 | Nissan Chemical Industries, Ltd. | Positive-type photosensitive resin composition and cured film manufactured therefrom |
US8168371B2 (en) | 2007-01-22 | 2012-05-01 | Nissan Chemical Industries, Ltd. | Positive photosensitive resin composition |
WO2011024545A1 (ja) * | 2009-08-24 | 2011-03-03 | 日産化学工業株式会社 | マイクロレンズ用感光性樹脂組成物 |
JPWO2011024545A1 (ja) * | 2009-08-24 | 2013-01-24 | 日産化学工業株式会社 | マイクロレンズ用感光性樹脂組成物 |
US8993699B2 (en) | 2009-08-24 | 2015-03-31 | Nissan Chemical Industries, Ltd. | Photosensitive resin composition for microlens |
JP5725301B2 (ja) * | 2009-08-24 | 2015-05-27 | 日産化学工業株式会社 | マイクロレンズ用感光性樹脂組成物 |
JP2016048305A (ja) * | 2014-08-27 | 2016-04-07 | 東京応化工業株式会社 | 層間絶縁膜形成用感光性樹脂組成物、層間絶縁膜及び層間絶縁膜の形成方法 |
WO2016088757A1 (ja) * | 2014-12-04 | 2016-06-09 | 日産化学工業株式会社 | ポジ型感光性樹脂組成物 |
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KR101229381B1 (ko) | 2013-02-05 |
JPWO2005116764A1 (ja) | 2008-04-03 |
CN1954264A (zh) | 2007-04-25 |
CN1954264B (zh) | 2012-03-21 |
KR20070022108A (ko) | 2007-02-23 |
JP4509107B2 (ja) | 2010-07-21 |
TW200604738A (en) | 2006-02-01 |
TWI424270B (zh) | 2014-01-21 |
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