WO2005106932A1 - Méthode d'analyse, équipement d'exposition et système d'équipement d'exposition - Google Patents

Méthode d'analyse, équipement d'exposition et système d'équipement d'exposition Download PDF

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Publication number
WO2005106932A1
WO2005106932A1 PCT/JP2005/007807 JP2005007807W WO2005106932A1 WO 2005106932 A1 WO2005106932 A1 WO 2005106932A1 JP 2005007807 W JP2005007807 W JP 2005007807W WO 2005106932 A1 WO2005106932 A1 WO 2005106932A1
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WIPO (PCT)
Prior art keywords
exposure
combination
processing
predetermined
processing unit
Prior art date
Application number
PCT/JP2005/007807
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English (en)
Japanese (ja)
Inventor
Kenichi Shiraishi
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to EP05734493A priority Critical patent/EP1753017A4/fr
Priority to US11/587,824 priority patent/US20080215295A1/en
Priority to JP2006512772A priority patent/JPWO2005106932A1/ja
Publication of WO2005106932A1 publication Critical patent/WO2005106932A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Definitions

  • the present invention is used for manufacturing electronic devices (hereinafter simply referred to as electronic devices or devices) such as semiconductor devices, liquid crystal display devices, imaging devices such as CCDs, plasma display devices, and thin-film magnetic heads.
  • electronic devices such as semiconductor devices, liquid crystal display devices, imaging devices such as CCDs, plasma display devices, and thin-film magnetic heads.
  • the present invention relates to an analysis method suitable for analyzing data relating to an exposure result and capable of early detection of poor line width control accuracy and overlay accuracy. Further, the present invention relates to an exposure apparatus and an exposure apparatus system capable of detecting an inaccuracy of line width control accuracy and overlay accuracy at an early stage by using the analysis method and improving productivity of an electronic device.
  • an image of a fine pattern formed on a photomask reticle (hereinafter, collectively referred to as a “reticle”) is exposed to light using a lithography apparatus, using an exposure apparatus.
  • a projection exposure is performed on a substrate (hereinafter, collectively referred to as a wafer) such as a semiconductor wafer or a glass plate coated with a photosensitive agent such as
  • a substrate hereinafter, collectively referred to as a wafer
  • the reticle and the wafer are aligned with high precision (alignment), the reticle pattern is already formed on the wafer, and is superimposed on the pattern, and projection exposure is performed.
  • pattern miniaturization and high integration have been rapidly progressing, and such an exposure apparatus is required to have higher exposure accuracy than before. As a result, the requirements for accuracy for alignment have become more stringent, and a higher-precision alignment has been demanded.
  • a mark detection method in reticle alignment a method using exposure light can be said to be general.
  • the VRA (Visual Reticle Alignment) method which applies the exposure light to the alignment mark drawn on the reticle and measures the mark position by processing the image data of the alignment mark imaged by a CCD camera, etc., is applied.
  • an LSA (Laser Step Alignment) method in which a laser beam is applied to an alignment mark in a row of dots on a wafer and the mark position is measured using light diffracted or scattered by the mark. is there. Also, light a halogen lamp, etc.
  • FIA Field Image Alignment
  • the alignment mark is illuminated with light having a wide wavelength bandwidth as a source, and the mark position is measured by processing the image data of the alignment mark captured by a CCD camera or the like. Furthermore, a laser beam with a slightly changed frequency is applied to the diffraction grating alignment mark on the wafer from two directions, and the two generated diffraction lights interfere with each other to measure the position of the phase alignment mark. (Laser Interferometric Alignment) method.
  • Wafer alignment includes a die-by-die (D / D) alignment method in which alignment marks are detected and aligned for each shot area of a wafer, and wafer-only alignment of only a few shot areas.
  • D / D die-by-die
  • the global alignment method is mainly used for electronic device manufacturing lines in view of the throughput.
  • the Enno-Nst 'Global' Alignment (EGA) method which detects the regularity of the arrangement of shot regions on a wafer with high accuracy by a statistical method, is widely used (for example, see Patent Document 1). .
  • optical alignments first, an alignment mark on a reticle is detected, and position coordinates are measured. Next, the alignment mark on the wafer is detected, and the position coordinates are measured. Next, based on these measurement results, the relative positional relationship between the position of the reticle and the position of the shot to be superimposed is determined. Based on these results, the wafer is moved by a wafer stage so that the reticle pattern image overlaps the shot position, and the reticle pattern image is projected and exposed.
  • a specific error may become larger than in a lithographic process.
  • a certain process program sometimes called a recipe
  • the nonlinear component of the EGA increases and the overlay accuracy increases.
  • the focus control accuracy of a chipped shot that is strong at the wafer edge may be adversely affected only for a wafer in a specific process.
  • it is very difficult to optimize all parameters in the recipe for each process because of the large number of parameters. Therefore, wafer exposure is not always performed under optimal recipe settings for practical use. This excludes certain recipes from aggravating certain errors.
  • an object of the present invention is to provide measurement data related to device manufacturing such as line width control accuracy and overlay accuracy depending on a process program (recipe), a processing unit, or a combination thereof in a lithographic process.
  • An object of the present invention is to provide an analysis method capable of performing an analysis easily and appropriately.
  • Another object of the present invention relates to such an analysis method. It is an object of the present invention to provide an exposure apparatus and an exposure apparatus system capable of appropriately performing electronic analysis and manufacturing an electronic device with appropriate and high productivity.
  • Patent Document 1 JP-A-62-84516
  • Patent Document 2 Japanese Patent No. 336436
  • a predetermined characteristic of an exposure result obtained by exposing an exposure target is detected (Step S110), and the exposure includes the exposure performed on the exposure target.
  • a process program that defines predetermined processing conditions of the Lisodara Fye is detected (step S120), and the predetermined characteristics of the detected exposure result are classified for each of the process programs (step S130), and the exposure result is determined.
  • An analysis method is provided for detecting a dependency of a predetermined characteristic on the process program.
  • characteristics of the exposure result such as line width accuracy and overlay accuracy
  • the characteristics are arbitrarily detected from the result of the exposure process, and the characteristics are obtained when the exposure process exhibiting the characteristics is performed.
  • the characteristics of the exposure result can be compared for each recipe, and as a result, the relationship and correlation between the characteristic and the recipe, that is, the dependence of the characteristic on the recipe can be detected.
  • a processing unit or a combination of processing units used for a predetermined process of the lithographic process performed on the exposure target is detected, and the detected
  • the predetermined characteristics of the exposure result are classified by the process program, the processing unit or the combination of the processing units, or each combination thereof, and the process program, the processing unit or the processing unit having the predetermined characteristic of the exposure result Combinations or dependencies on those combinations can be detected.
  • the predetermined characteristics of the exposure result are accuracy of a line width of a pattern formed by exposure and overlay accuracy of the pattern.
  • the process program is configured to predict that a predetermined characteristic of the exposure result exceeds a predetermined reference value.
  • a unit or a combination of processing units or at least one of the combinations is specified, and the specified process program and the specified processing An alarm can be issued when a unit, a combination of processing units, or a process corresponding to the combination is performed.
  • a predetermined characteristic of an exposure result obtained by exposing an exposure target is detected, and a predetermined process of the lithographic process performed on the exposure target is performed.
  • the used processing unit or combination of processing units is detected, and the predetermined characteristic of the detected exposure result is classified for each processing unit or combination of processing units, and the process program of the predetermined characteristic of the exposure result is obtained.
  • An analysis method for detecting a dependency on is provided.
  • an exposure unit for exposing a pattern formed on a mask to a substrate a detection unit for detecting a predetermined characteristic of an exposure result of the pattern, and a substrate provided for the exposure
  • a process program that specifies the conditions of the processing used in the predetermined processing of the lithographic process including the exposure, the processing unit used in the predetermined processing of the lithographic process, or a combination of the processing units, or Collecting means for collecting a combination of the above, and a predetermined characteristic of the exposure result detected by the detecting means, a combination of the process program, the processing unit or the processing unit collected by the collecting means, or a combination thereof.
  • the process program and the processing unit are classified for each combination and have predetermined characteristics of the exposure result. Tsu DOO or processing Interview - combination of Tsu bets, or an exposure apparatus having analyzing means for analyzing the dependence on a combination thereof are provided.
  • the analysis means may include a combination of the process program, the processing unit, or the processing unit that affects a predetermined characteristic of an exposure target substrate force. Alternatively, if the combination of the substrates is used, a warning to that effect can be issued.
  • the exposure means may be configured such that the substrate to be exposed is the process program, the processing unit or a combination of the processing units, or a substrate on which the combination is used, which affects predetermined characteristics of an exposure result. The exposure can be performed together with the correction processing for removing the influence on the predetermined characteristic.
  • a pre-exposure step and a pre-exposure step are performed on a substrate to be exposed.
  • a track (20) having a processing unit for performing a predetermined process in a subsequent process, an exposure device (10) for transferring a pattern formed on a mask to a predetermined shot area of a substrate by an exposure process, and A process program defining the conditions of the substrate used in the predetermined process of the lithographic process including the exposure, and the processing unit or the processing unit used in the predetermined process of the lithographic process.
  • a collection means (210) for collecting combinations or combinations thereof, and a predetermined characteristic of the exposure result, for each of the process programs, the processing units or the processing units collected by the collection means, or for each combination thereof.
  • the process program the processing unit or the process having predetermined characteristics of the exposure result.
  • An exposure apparatus system (1) having an analyzer (251) for detecting a combination of processing units or a dependency on the combination is provided.
  • the track (20) may be the process program, the processing unit, or a combination of the processing units, or a combination thereof, which affects predetermined characteristics of an exposure result.
  • the exposure apparatus (10) further includes an optimum condition detection unit that detects a control condition for processing the substrate using the combination by the exposure apparatus so as not to affect the predetermined characteristics.
  • the optimal condition detecting means is used. Exposure can be performed according to the control condition detected in step (1). Further, the optimum condition detecting means may measure the surface shape of the substrate and detect the control condition for performing focus control. Further, the optimum condition detecting means may observe a pattern formed on the substrate and detect the control condition for detecting the position of the pattern.
  • FIG. 1 is a diagram showing a configuration of an exposure apparatus system according to an embodiment of the present invention.
  • FIG. 2 is a view showing a configuration of an exposure apparatus of the exposure apparatus system shown in FIG. 1.
  • FIG. 3 is a cross-sectional view of an index plate of an off-axis alignment optical system of the exposure apparatus shown in FIG. 1.
  • FIG. 4 is a diagram showing a functional configuration of a server of the exposure apparatus system shown in FIG. 1.
  • FIG. 5 is a view showing an error collection graph by a process analysis function of the apparatus of the server function shown in FIG.
  • FIG. 6 is a diagram showing a productivity graph by a device / process analysis function of the server function shown in FIG.
  • FIG. 7 is a diagram showing a device environment graph by the device 'process analysis function of the server function shown in FIG.
  • FIG. 8 is a diagram schematically showing a configuration of an exposure apparatus and a track processing unit shown in FIG. 1.
  • FIG. 9 is a flowchart showing an analysis method according to the present invention in the exposure apparatus system shown in FIG. 1.
  • FIG. 10 is a diagram showing the distribution of EGA nonlinear components for each recipe.
  • FIG. 1 is a block diagram showing a configuration of an exposure apparatus system 1 according to one embodiment of the present invention.
  • the exposure apparatus system 1 includes an exposure apparatus 10, a track 20, a laser 30, an inline measuring instrument (inspection apparatus) 40, an offline measuring instrument (inspection apparatus) 50, an apparatus support system 60, and a communication network.
  • the device support system 60 has a server 61, a terminal device 62, and a remote terminal device 63.
  • the communication network 70 has a first network 71, a second network 72, and a gate device 73.
  • the exposure apparatus system 1 has a plurality of device manufacturing lines, and a plurality of exposure apparatuses 10, tracks 20, lasers 30, and in-line measuring instruments 40 are provided, for example, corresponding to each line. Further, a plurality of offline measuring instruments 50 are provided separately from the production lines.
  • the exposure apparatus 10 projects an image of a desired pattern formed on a reticle onto a substrate (e.g., wafer) coated with a photosensitive material, and transfers the pattern onto a wafer.
  • a substrate e.g., wafer
  • exposure apparatus 10 of the present embodiment includes a so-called twin-stage type exposure apparatus having two units of a wafer stage on which a wafer is mounted, and also having two units of an alignment system for performing wafer alignment. It is. After the wafer mounted on the first stage is aligned in the first alignment unit, the wafer is placed at an exposure position below the projection optical system for each first stage and exposed to light.
  • the wafer mounted on the second stage is aligned in the second alignment unit
  • the wafer is arranged at the exposure position below the projection optical system for each second stage and is subjected to exposure.
  • An alignment process for the first stage wafer by the first alignment unit and an exposure process for the second stage wafer via the projection optical system, and an exposure process for the first stage wafer via the projection optical system Since the processing and the alignment by the second alignment unit for the wafer in the second stage are performed alternately and concurrently, the exposure processing can be performed efficiently. Since these two stage units and two alignment units have the same configuration, in the following description of the configuration of the exposure apparatus, only one of each will be illustrated and described.
  • the overall configuration of the exposure apparatus will be described with reference to FIGS.
  • the XYZ rectangular coordinate system shown in FIG. 2 is set, and the positional relationship and the like of each member will be described with reference to the XYZ rectangular coordinate system.
  • the XYZ orthogonal coordinate system is set so that the X axis and the Z axis are parallel to the paper surface and the Y axis is perpendicular to the paper surface.
  • the XY plane is actually set as a plane parallel to the horizontal plane, and the Z axis is set vertically upward.
  • exposure apparatus 10 as shown in FIG.
  • exposure light EL emitted from an unillustrated illumination optical system emits uniform illuminance distribution to pattern area PA formed on reticle R via condenser lens 101.
  • As the exposure light EL for example, g-line (436 nm) or 1-line (365 nm), or light emitted from a KrF excimer laser (248 nm), an ArF excimer laser (193 nm), or an F laser (157 nm) is used. g-line (436 nm) or 1-line (365 nm), or light emitted from a KrF excimer laser (248 nm), an ArF excimer laser (193 nm), or an F laser (157 nm) is used. .
  • Reticle R is held on reticle stage 102, and reticle stage 102 is supported on base 103 so that it can move and minutely rotate in a two-dimensional plane.
  • a main control system 115 for controlling the operation of the entire apparatus controls the operation of the reticle stage 102 via the driving device 104 on the base 103.
  • the reticle R is formed by detecting a reticle alignment mark (not shown) formed therearound by a reticle alignment system including a mirror 105, an objective lens 106, and a mark detection system 107. Positioned relative to AX.
  • the exposure light EL transmitted through the pattern area PA of the reticle R is incident on, for example, both-side (or one side) telecentric projection optical system PL, and is projected on each shot area on the wafer (substrate) W. .
  • the projection optical system PL is best corrected for aberration with respect to the wavelength of the exposure light EL, and the reticle R and the wafer W are conjugated to each other under that wavelength.
  • the exposure light EL is Keller illumination, and is formed as a light source image at the center of the pupil EP of the projection optical system PL.
  • the projection optical system PL has a plurality of optical elements such as lenses.
  • an optical material such as quartz or fluorite is used according to the wavelength of the exposure light EL.
  • Wafer W is placed on wafer stage 109 via wafer holder 108.
  • a reference mark 110 used for baseline measurement or the like is provided on the wafer stage 109.
  • the wafer stage 109 two-dimensionally positions the wafer W in a plane perpendicular to the optical axis AX of the projection optical system PL.
  • the XY stage the wafer W in a direction (Z direction) parallel to the optical axis AX of the projection optical system PL.
  • An L-shaped moving mirror 111 is attached to one end of the upper surface of the wafer stage 109, and a laser interferometer 112 is arranged at a position facing the mirror surface of the moving mirror 111.
  • the movable mirror 111 is composed of a plane mirror having a reflection surface perpendicular to the X axis and a plane mirror having a reflection surface perpendicular to the Y axis.
  • the laser interferometer 112 has two laser interferometers for the X-axis that irradiate the moving mirror 111 along the X-axis and a laser interferometer for irradiating the moving mirror 111 along the Y-axis
  • the X coordinate and the Y coordinate of the ueno and the stage 109 are measured by one laser interferometer for the X axis and one laser interferometer for the ⁇ axis.
  • the rotation angle of the wafer stage 109 in the XY plane is measured based on the difference between the measurement values of the two X-axis laser interferometers.
  • the position measurement signal PDS indicating the X coordinate, the Y coordinate, and the rotation angle measured by the laser interferometer 112 is supplied to the stage controller 113.
  • the stage controller 113 controls the position of the stage and the stage 109 via the drive system 114 in accordance with the position measurement signal PDS under the control of the main control system 115.
  • the position measurement information PDS is output to the main control system 115.
  • the main control system 115 outputs a control signal for controlling the position of the stage 109 to the stage controller 113 while monitoring the supplied position measurement signal PDS.
  • the position measurement signal PDS output from the laser interferometer 112 is output to a field image alignment (FIA) calculation unit 141 described later.
  • FIA field image alignment
  • the exposure apparatus 10 includes an off-axis type alignment optical system (hereinafter, referred to as an alignment sensor) on the side of the projection optical system PL.
  • This alignment sensor performs signal processing (including image processing) on a signal (n-dimensional signal) taken near the alignment mark on the substrate surface, and detects the position information of the mark, using an FIA (Field Image Alignment) type alignment. It is a sensor.
  • search alignment measurement / fine alignment measurement is performed by the alignment sensor.
  • the search alignment measurement is a process of detecting a plurality of search alignment marks formed on a wafer, and detecting a rotation amount of the wafer and a displacement in an XY plane.
  • a signal processing method for search alignment measurement uses a preset reference pattern (template) and a template. Using a template matching method that detects a predetermined pattern corresponding to a plate
  • Fine alignment measurement is a process for detecting an alignment mark for fine alignment formed corresponding to a shot area and finally positioning each exposure shot.
  • a fine alignment image processing method a method of extracting an edge of a mark and detecting its position (edge measurement method) is used.
  • the image processing method is not limited to the method of the present embodiment, but may be a template matching method or an edge measurement method. It may be an image processing method.
  • the observation magnification at the time of the search alignment measurement and the observation magnification at the time of the fine alignment measurement may be equal to each other, or the magnification at the time of the fine alignment may be higher than the magnification at the time of the search alignment. You can set it to.
  • the alignment sensor includes a halogen lamp 126 that emits irradiation light for illuminating the wafer W, a condenser lens 127 that collects illumination light emitted from the halogen lamp 126 to one end of an optical fiber 128, and And an optical fiber 128 for guiding illumination light.
  • the reason that the halogen lamp 126 is used as a light source of the illumination light is that the wavelength range of the illumination light emitted from the halogen lamp 126 is 500 to 800 nm, which is a wavelength range in which the photo resist applied to the upper surface of the wafer W is not exposed. Also, it is possible to reduce the influence of the wavelength characteristic of the reflectance on the surface of the wafer W having a wide wavelength band.
  • Illumination light emitted from the optical fiber 128 passes through a filter 129 that cuts a photosensitive wavelength (short wavelength) region and an infrared wavelength region of the photoresist applied on the wafer W, and passes through a lens system.
  • the half mirror 131 is reached via 130.
  • the illumination light reflected by the half mirror 131 is reflected by the mirror 132 almost in parallel with the X-axis direction, then enters the objective lens 133, and further around the lower part of the barrel of the projection optical system PL.
  • the light is reflected by a prism (mirror) 34 fixed so as not to block the field of view, and irradiates the wafer W vertically.
  • a proper illumination field stop is provided at a position conjugate with the wafer W with respect to the objective lens 133 in the optical path up to the objective lens 133 with respect to the output end force of the optical fiber 128 which is not shown.
  • the objective lens 133 is set to be telecentric, and its aperture stop An image of the exit end of the optical fiber 128 is formed on the surface 133a (same as the pupil), and Koehler illumination is performed.
  • the optical axis of the objective lens 133 is determined to be vertical on the wafer W, so that the mark position does not shift due to the tilt of the optical axis when detecting the mark.
  • the reflected light from wafer W is imaged on index plate 136 by lens system 135 via prism 134, objective lens 133, mirror 132, and half mirror 131.
  • the index plate 136 is arranged conjugate with the wafer W by the objective lens 133 and the lens system 135, and linearly extends in the X-axis direction and the Y-axis direction in a rectangular transparent window as shown in FIG.
  • Index markers 136a, 136b, 136c, 136d are formed in the transparent window 136e of the index plate 136, and the image of the mark of the wafer W and the images of the index marks 136a, 136b, 136c and 136d are connected to a relay system.
  • An image is formed on the image sensor 140 via 137, 139 and the mirror 138.
  • the image sensor 140 (photoelectric conversion means, photoelectric conversion element) converts an image incident on the imaging surface into a photoelectric signal (image signal, image data, data, signal). Used.
  • the signal (n-dimensional signal) output from the image sensor 140 is input to the FIA operation unit 141 together with the position measurement signal PDS from the laser interferometer 112.
  • a two-dimensional image signal is obtained by the image sensor 140 and is input to the FIA operation unit 141 for use.
  • the signals obtained by the two-dimensional CCD are integrated (projected) in the non-measurement direction and used as a one-dimensional projection signal for measurement in the measurement direction.
  • the format of the signal obtained by the image sensor 140 and the signal to be processed in the subsequent signal processing is not limited to the example of the present embodiment.
  • two-dimensional image processing may be performed to use two-dimensional signals for measurement. Further, a configuration may be adopted in which a three-dimensional image signal is obtained and three-dimensional image processing is performed.
  • the CCD signal is expanded into n dimensions (n is an integer of n ⁇ l) to generate, for example, an n-dimensional cosine component signal, an n-dimensional sine signal, or an n-dimensional frequency signal, It is also applicable to those that perform position measurement using the n-dimensional signal.
  • n is an integer of n ⁇ l
  • image, image signal, image information, pattern signal, etc.” similarly applies not only to a two-dimensional image but also to this.
  • Such an n-dimensional signal an n-dimensional image signal or a signal developed from an image signal as described above is also included.
  • the FIA operation unit 141 also detects an alignment mark in the input image signal, and obtains a shift of the mark image of the alignment mark with respect to the index marks 136a to 136d. Then, from the stop position of the wafer stage 109 represented by the position measurement signal PDS, when the image of the mark formed on the wafer W is accurately positioned at the center of the index marks 136a to 136d, Information AP2 on the mark center detection position is output.
  • the FIA operation unit 141 detects a position of a predetermined alignment mark image and detects a deviation thereof at the time of each alignment process of the search alignment and the fine alignment.
  • the position of a mark and the detection of a deviation are detected using a template matching method at the time of search alignment, and using an edge detection processing method at the time of fine alignment.
  • Each component of the exposure apparatus 10 operates in cooperation under the control of the main control system 115.
  • the main control system 115 controls each unit of the exposure apparatus 10 in such a manner. Further, the main control system 115 communicates with the server 61 of the device support system 60 described later via the communication network 70. Then, operation history data, process programs (process condition data, sometimes referred to as recipes), equipment setup status data, and measurement data at each section described above, ie, alignment measurement data and trace data of mark signal waveforms And the like to the server 61.
  • the main control system 115 controls the operating conditions, stops the operation, or suspends the operation based on the control information obtained by the server 61 of the device support system 60 based on the data described above. Or be done.
  • the main control system 115 can collect the power data of each device such as the truck 20, the laser 30, the in-line measuring device 40, and the off-line measuring device 50 via the first network 71 constituting the communication network 70. it can.
  • the schematic configuration of the exposure apparatus 10 has been described above.
  • the track 20 is a processing system for sequentially transporting wafers in each line and for performing processes before and after exposure.
  • the truck 20 has an optimum condition detecting unit 25, a coating unit 21, a first beta unit 22, a second beta unit 23, and a developing unit 24.
  • the reflection enhancement film is coated with a resist in the coating unit 21, the solvent is blown off by the beta in the first beta unit 22, the solvent is thrown into the exposure apparatus 10, and the exposure processing is performed.
  • beta (PEB) is performed in the second beta unit 23, and development is performed in the developing unit 24.
  • the optimum condition detection unit 25 obtains a wafer surface shape measurement alignment signal for the loaded wafer under the same conditions as the exposure apparatus 10, and selects an optimal focus control method alignment method for the wafer. . Therefore, the same AF system and alignment system as the exposure apparatus 10 are installed in the optimum condition detection unit 25, and the conditions for performing optimal processing in the exposure apparatus 10 are thereby detected.
  • the coating unit 21, the first beta unit 22, the second beta unit 23, and the developing unit 24 of the truck 20 each have three units having the same function and the same performance. Then, the loaded wafers are processed simultaneously and in parallel by these units.
  • the laser 30 is a light source that provides exposure light to the exposure device 10 of each line.
  • the in-line measuring device 40 is a sensor incorporated in a device such as the exposure device 10, the track 20, or the laser 30, and is a sensor that measures information such as temperature, humidity, and atmospheric pressure of the device atmosphere.
  • the data measured by the in-line measuring device 40 is output to the server 61 of the device support system 60 based on a data transfer method described later.
  • the offline measuring device 50 is a measuring tool that is not directly incorporated in a device manufacturing line, and is, for example, an overlay measuring device or a line width measuring device.
  • the apparatus support system 60 collects various kinds of data such as the exposure apparatus 10, the track 20, the laser 30, the in-line measuring instrument 40, and the off-line measuring instrument 50 via the network 70, and analyzes the collected data. For example, a state such as a device abnormality is grasped. If there is an abnormality in the device, the cause is detected based on the analysis result. Further, the process of each production line of the exposure apparatus system 1 is controlled based on the state of each apparatus. For that purpose, the server 61 of the equipment support system 60 first collects data from the exposure equipment 10, the track 20, the laser 30, the in-line measuring instrument 40, and the offline measuring instrument 50, and stores and manages the data in a database. . Then, using the stored data, analysis and diagnosis of the operating state of the device line are performed. In addition, if necessary, Make an estimate. Also, based on the result, processing such as automatic correction control of each device, report creation and notification is performed.
  • the data collection unit 210 of the server 61 includes an exposure device data acquisition unit 211 that collects data from the exposure device 10, a track data acquisition unit 212 that collects data from the track 20, and a laser that collects data from the laser 30. It has a data acquisition unit 213, an inline measurement device data acquisition unit 214 that collects data from the inline measurement device 40, and an offline measurement device data acquisition unit 215 that collects data from the offline measurement device 50. These data acquisition units 2
  • various signal waveform files such as an event log file, a sequence log file, an error log file, an operation history log file, a measurement result file, a meter setting file, a diagnostic result file, an alignment, and others via the communication network 70. Collect various trace data and log files.
  • Information on, for example, the used recipe / used processing unit for each lot according to the present invention is input via the exposure apparatus data acquisition unit 211 and the track data acquisition unit 212.
  • the EGA measurement result data and the overlay measurement result data can be obtained from the exposure apparatus 10 via the exposure apparatus data acquisition section 211 or from the overlay error measurement of the offline measurement instrument 50 via the offline measurement instrument data acquisition section 215. The strength is also input.
  • the exposure step DB 220 is a database that stores the data collected by the data collection unit 210. For example, information on the used recipe / used processing unit for each lot, or EGA measurement result data, overlay error measurement data, and the like are also accumulated in the exposure step DB 220.
  • Exposure Step The data stored in the DB 220 is used by an application 250 described later as appropriate, and is used for assisting processing of the exposure apparatus. In addition, it is also accessed from a terminal device 62 and a remote terminal device 63 described later. Generally, the amount of data generated in the exposure apparatus 10 is enormous as compared with other process apparatuses, and the enormous database is efficiently managed by the exposure process DB 220.
  • the common software tool 230 is a tool commonly used when the server 61 performs a desired operation. For example, functions such as access to data collected by the data collection unit 210 or data stored in the exposure process DB 220, remote connection via a communication network, and the like are provided as the common tool.
  • the interface 240 is an interface for the server 61 to perform communication with other devices and input and output of data and instructions with an operator. Specifically, the interface 240 provides a communication environment in which the server 61 is connected to another apparatus such as the exposure apparatus 10 via the communication network 70 to transfer data. In addition, a remote network connection environment that allows access from the terminal device 62 connected via the communication network 70 is provided. It also provides a human interface environment for inputting and outputting instructions and data from workers in a suitable form.
  • the application 250 is a program that implements a function for the server 61 in the exposure apparatus system 1 to actually support the apparatus such as the exposure apparatus 10.
  • the server 61 of the present embodiment has a device 'process analysis function 251, a report' notification function 2 52, an e-mail diagnosis function 253, an automatic diagnosis function 254, a PP management function 255, and an automatic correction control function 256.
  • the apparatus' process analysis function 251 analyzes the data stored in the exposure step DB 220 and outputs the analysis result in the form of, for example, a graph.
  • the apparatus' process analysis function 251 includes, as the analysis processing according to the present invention, a process program (recipe), an overlay apparatus, a line width accuracy, and the like for the processing units of the exposure apparatus 10 and the track 20 as shown in FIG. Of the exposure characteristics is analyzed. The specific contents of this analysis method will be described later in detail.
  • the apparatus' process analysis function 251 performs a tallying processing, a statistical processing, and the like of the data accumulated in the exposure step DB 220.
  • the device 'process analysis function 251 totals the number of errors for each unit of the device, and outputs an error total graph as shown in FIG.
  • the error aggregation graph shown in FIG. 5 is a graph showing the number of errors that have occurred for each of the exposure apparatuses 10 during a predetermined period for each type of error (for each unit where an error has occurred). Looking at this graph, you can see which unit of which exposure tool has the problem. You can grasp at a glance. In other words, it is possible to analyze the dependence of the error on the device or recipe (process “program”), thereby shortening the time required for troubleshooting.
  • the apparatus' process analysis function 251 tallies up, for example, the processing time for each processing step, and outputs a productivity graph as shown in FIG.
  • the productivity graph shown in FIG. 6 is a graph showing the wafer exchange time, alignment time, and exposure time for each wafer in the lot. From such a graph, it can be seen that wafers having a long wafer exchange time sometimes exist, and wasteful wafer transport occurs. In other words, the use status of the device can be grasped from such a graph, and measures for improving productivity can be examined.
  • the apparatus' process analysis function 251 outputs a graph indicating the control state of the atmospheric pressure as shown in FIG. 7, for example, by totalizing the target atmospheric pressure and the actual atmospheric pressure of the lens chamber.
  • Figure 7 is a plot of the target air pressure of the two lens chambers (Room A and Room B) and the measured actual air pressure superimposed.
  • the upper row shows data for Room A
  • the lower row shows data for Room B.
  • the target air pressure is indicated by broken lines
  • the actual air pressure is indicated by diamonds.
  • Each is plotted as a figure.
  • This graph shows that both Room A and Room B follow the target air pressure well.
  • the environment of the exposure apparatus 10 can be grasped from such a graph. That is, it is possible to obtain the correlation between the equipment performance and environmental fluctuations, shorten the time required to investigate the cause of the process abnormality, and optimize the frequency of equipment adjustment.
  • the apparatus' process analysis function 251 operates in this manner, thereby reducing the graph creation load when data is arranged and analyzed. Then, the analysis efficiency is improved, and the downtime can be reduced.
  • the report "notification function 252" transmits the analysis processing result or the abnormality cause estimation result performed by the device "process analysis function 251" to the terminal device 62 where the worker is located or the remote terminal device via the communication network 70. Output to 63.
  • the report 'notification function 252 automatically generates a report indicating the operation status of each device of the exposure apparatus system 1 on a monthly, weekly, or daily basis, and outputs a predetermined output destination. Output to The content of the report is management data for maintaining the proper operation status of the equipment, such as MTBF, MTBI, or histograms for each fault occurrence factor.
  • the e-mail diagnosis function 253 is a function of transmitting the output contents and the like of the automatic diagnosis function 254 described later to the remote terminal device 63 at a remote place via the communication network 70.
  • the e-mail diagnosis function 253 it is possible to monitor the performance of each device of the exposure apparatus system 1 at the remote terminal device 63, grasp a defect or a failure, determine a failure site, and the like.
  • diagnosis and adjustment of the exposure apparatus 10 and the like can be performed from a remote location. By constantly monitoring the operation history and log data, preventive maintenance of the equipment becomes possible.
  • the automatic diagnosis function 254 is a function of analyzing data transmitted from various devices and automatically detecting abnormalities in the operation status of the devices. In the automatic diagnosis function 254 as well, the data is analyzed and analyzed and the cause of the abnormality is estimated using the analysis method according to the present invention. The analysis method and the method of estimating the cause of abnormality according to the present invention will be described later in detail.
  • the automatic diagnosis function 254 also performs an automatic diagnosis such as error number diagnosis, maintenance data diagnosis, or production data diagnosis.
  • the error count diagnosis is to find an apparatus trouble and a defective process from the number of errors that occur in the stage, loader, alignment, and the like of the exposure apparatus 10.
  • Maintenance data diagnosis optimizes the maintenance frequency and the time to replace consumables by monitoring changes in various measurement results such as the stage, imaging system, illumination system, alignment, and AF of the exposure system 10. It performs Production data diagnosis is intended to detect process abnormalities early and prevent defective product production by monitoring alignment measurement results and focus control data. With such an automatic diagnosis function 254, the downtime can be reduced and abnormalities during production can be detected early or at an appropriate timing, and the number of rework wafers can be reduced.
  • the recipe (PP) management function 255 is a function of managing a recipe in which actual processing conditions in a processing apparatus such as the exposure apparatus 10 are described.
  • recipes applied to the exposure apparatus 10 and the tracks 20 are centrally managed in the server 61, and the server 61 can download or upload the recipes to the control apparatuses of the respective exposure apparatuses 10 and the respective tracks. I have.
  • the PP management function 255 stores information indicating which recipe is applied to which lot and the processing of the exposure apparatus 10 and the track 20 is controlled. This information is obtained by using the process analysis function 251 of the equipment described above, It is referred to when analyzing whether or not the degree depends on the recipe.
  • the PP management function 255 provides an environment in which an operator can create a recipe on the server 61.
  • the PP management function 255 provides an environment, tools, and the like that allow an operator to access the server 61, such as an office PC, via the communication network 70 to create and edit recipes (desktop recipe editing). function).
  • the PP management function 255 provides an environment for optimizing recipes. Normally, an operator edits and optimizes a recipe based on, for example, an analysis result or a diagnosis result obtained by the above-described apparatus' process analysis function 251 or automatic diagnosis function 254. However, when editing a recipe, you may want to check the validity of the processing conditions.
  • the PP management function 255 provides a worker with a simulation environment for checking the validity of such conditions. More specifically, the PP management function 255 provides a simulation environment for exposure processing based on a set recipe, thereby enabling, for example, evaluation of overlay, imaging, and throughput.
  • the automatic correction control function 256 is a function of performing feed knock or feed forward correction control based on data to which various device powers are also sent, and stabilizing the functions and operations of the device.
  • the automatic correction control function 256 is based on the dependence of the exposure characteristics such as the overlay accuracy and line width accuracy on the recipe related to the present invention, the exposure unit 20 and the processing unit of the track 30 and the combination thereof in the process analysis function 251. If the analysis process is performed and a newly input lot uses a recipe processing unit that affects such overlay accuracy and line width accuracy, Automatic correction control is performed for this. In such a case, the automatic correction control function 256 first instructs the optimum condition detection unit 25 shown in FIG. 8 to detect the optimum condition.
  • a wafer surface shape measurement alignment signal is obtained for the inserted wafer under the same conditions as in the exposure apparatus 10, and an instruction is made to select an optimal focus control method alignment method for the wafer.
  • the automatic correction control function 256 instructs the exposure apparatus 10 to perform the exposure processing under the selected conditions.
  • the automatic correction control function 256 performs correction control for changes in the environment and the state of the apparatus, and correction control for processes. Correction control for changes in the environment and equipment status
  • the stability of the apparatus performance is achieved by performing correction control on environmental fluctuations such as temperature, atmospheric pressure or humidity, and changes in the state of the apparatus such as an exposure apparatus, a track, and a laser. Specifically, for example, the following controls are performed. First, the focus surface of the exposure apparatus 10 is predicted and controlled based on the change data of the atmospheric pressure, temperature, and humidity to improve the surface stability (long-term focus stability). In addition, from the change data of laser, barometric pressure, temperature and humidity
  • the optimum exposure is predicted and controlled to improve the CD stability between wafers ( ⁇ CD stabilization between wafers).
  • the unevenness of the line width in the wafer due to the uneven PEB temperature is corrected by finely adjusting the exposure amount for each shot to improve the stability of ⁇ CD in the wafer (stabilization of ⁇ CD in the wafer). ). It also measures the temperature change at the interface between the loader and the track, predicts the amount of wafer expansion and contraction during exposure, applies alignment corrections, and improves overlay accuracy (stabilization of overlap between wafers).
  • the correction control for the process predicts a variation due to the process and a variation due to a combination during operation of the exposure apparatus, the track, the laser, and the like, and corrects various operating conditions based on the prediction. By controlling, the performance of the device is stabilized. Specifically, the following control is performed. For example, optimization of correction parameters for SDM (distortion matching) and GCM (grid matching) is aimed at improving overlay accuracy (improvement of overlay accuracy between units). For details of SDM and GCM, refer to JP-A-7-57991 and JP-A-2002-353121. It also calculates the actual throughput using each recipe (process program), calculates the actual throughput between the exposure equipment tracks, and identifies the units with reduced throughput and supports countermeasures. Improvement). In addition, the alignment measurement algorithm is automatically selected for each process to improve the overlay accuracy (alignment measurement algorithm automatic measurement). In addition, lens aberration correction control optimized for the mask pattern is performed (lens aberration correction control).
  • the terminal device 62 of the device support system 60 is connected to a server, for example, in a factory. It is a terminal device for accessing 61.
  • the terminal device 62 is connected to a first network 71 of a communication network 70, and is connected to the server 61 via the first network 71.
  • the remote terminal device 63 of the device support system 60 is a terminal device for a related person to access the server 61 from, for example, an office outside a factory or a vendor of the exposure apparatus 10.
  • the remote terminal device 63 is connected to the server 61 via the second network 72, the gate device 73, and the first network 71 and using the function of the interface 240 of the server 61.
  • the above is the configuration of the device support system 60.
  • the communication network 70 is a network for connecting each device of the exposure apparatus system 1.
  • the first network 71 of the communication network 70 is, for example, a communication network in a factory, and includes the server 61 and the terminal device 62 of the apparatus support system 60, the exposure apparatus 10, the truck 20, the laser 30, the in-line measuring device 40, and the like. Connect the offline measuring instrument 50 etc.
  • the second network 72 of the communication network 70 is, for example, a communication network outside the factory, a network managed by a vendor of the exposure apparatus 10, or the like. As shown, the second network 72 and the first network 71 are connected by, for example, a gate device 73 having a firewall function.
  • FIG. 9 is a flowchart showing the flow of the analysis process.
  • the non-linear components of the EGA are totaled for each recipe, the recipes with large non-linear components are specified, and countermeasures are taken against them. Only the line forming component is corrected by the EGA, and the magnitude of the non-linear component is very large. Therefore, this non-linear component is detected and analyzed as a characteristic indicating the exposure result.
  • the causes of the EGA nonlinear component are that the sensors and algorithms at the time of alignment are not optimized, that the alignment mark has an effect such as asymmetry by CMP, or that the temperature of the wafer is low. Inadequate management accuracy.
  • this analysis process is started by performing an exposure process on a certain number of lots using various recipes and storing log information and the like thereof.
  • Analysis processing When started (step S100), the non-linear component of EGA is detected and collected for each processed lot (step S110). If the EGA nonlinear component has already been detected as overlay error data and accumulated in, for example, the exposure step DB 220, it may be read and used. When alignment measurement data or the like is stored, a nonlinear component may be extracted using the function of the device's process analysis function 251.
  • step S120 a track or a recipe used during exposure processing is detected (step S120).
  • the information of the recipe used is stored in the exposure process DB 220 for each lot, and thus is referred to.
  • step S130 the information on the collected EGA nonlinear components is classified in association with the recipe used (step S130), and the information on the nonlinear components for each of the classified recipes is graphed for easy comparison (step S130).
  • step S140 a graph as shown in FIG. 10 is obtained.
  • the graph shown in FIG. 10 is a graph in which the exposure recipe is plotted on the horizontal axis and the EGA nonlinear component is plotted on the vertical axis, and the data of each lot is plotted.
  • step S150 it is detected whether or not the recipe is present (step S150). Specifically, the average value and the standard deviation of the EGA nonlinear component are calculated for each recipe, and for example, the difference between the average value and the standard deviation calculated for a certain number of recipes is detected. If the difference exceeds a predetermined threshold, it is determined that the difference depends on the EGA nonlinear component S recipe.
  • the operator directly determines the dependence of the EGA nonlinear component on the recipe, the operator can easily grasp the dependence state by referring to the graph shown in FIG. From the graph shown in FIG. 10, it is observed that the EGA nonlinear component is clearly larger in the recipe scale, recipe S, and recipe Z than in the other recipes.
  • a predetermined corresponding process is performed as necessary (Step S160).
  • a recipe determined to affect the EGA nonlinear component a recipe determined to have an EGA non-linear component dependent on that recipe
  • control the report 'notification function 252 and provide such notifications and alerts.
  • GCM shot array correction function
  • the EGA nonlinear component that is included can be automatically corrected.
  • the optimal condition detection unit 25 which has the same function as the FIA in the exposure apparatus 10 and is arranged in the track 20 as shown in FIG. Utilizing the dwell time, an algorithm that can obtain the most appropriate alignment waveform is specified in advance. As a result, an optimal alignment algorithm can be used at the time of exposure.
  • the same configuration as the AF system of the exposure apparatus 10 is arranged in the optimum condition detection unit 25, and the step profile in the wafer in the target process is measured before exposure, and the AF control response is determined according to the measurement result. If optimization is performed, processing can also be performed.
  • the same analysis processing as described in the example of the EGA nonlinear component can be applied to the EGA line forming component.
  • the linear component of the EGA is a force that should be corrected by EGA measurement.If the wafer expands or contracts between the EGA measurement and the exposure, a linear component remains in the exposure result. Become. Therefore, the above analysis is applied to the EGA linear component to detect the dependence between the residual linear error and the recipe. In the case of performing exposure using a recipe having a dependency, the exposure is performed by adding an offset that also provides an analysis result to the EGA measurement result. Thereby, the exposure accuracy of the exposure apparatus 10 can be improved.
  • Such an analysis method can also be used for analysis in the case where the exposure characteristics fluctuate depending on the processing units used in the exposure apparatus 10 and the track 20, or a combination thereof.
  • the exposure apparatus 10 and the track 20 include a plurality of processing units having the same function.
  • the ODC function at the time of exposure (uneven illumination intensity for each shot and the function to intentionally change the exposure control to improve line width uniformity) can be used.
  • Optimal exposure correction for the corresponding unit combination can be executed.
  • the state of the exposure apparatus 10 and the abnormal state are quickly downloaded to the server 61, and the data is easily and appropriately analyzed, and, for example, the cause of the abnormality Etc. can be estimated.
  • the server 61 constituting the apparatus support system 60 performs the process of analyzing the dependence of the exposure characteristic on the process program, the processing unit of the exposure apparatus 10 and the track 20, and the combination thereof. Examples have been described, but the present invention is not limited to these.
  • the main controller 115 included in the exposure apparatus 10 may collect necessary information via the communication network 70 and perform the same analysis as described above. In this case, the collecting means for collecting the information and the analyzing means for performing the analysis are realized by cooperation of the hardware of the main control device 115 and the software.
  • the present embodiment is described for facilitating understanding of the present invention, and does not limit the present invention in any way.
  • Each element disclosed in the present embodiment includes all design changes and equivalents belonging to the technical scope of the present invention, and also includes any suitable various Can be modified.
  • the present invention is not limited to a system including an exposure apparatus.
  • the present invention can be applied to any processing apparatus used in an electronic device manufacturing process.

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Abstract

[PROBLÈMES] Fournir une méthode d'analyse pour analyser facilement et correctement des données de mesure, qui soit liée à la fabrication d'un dispositif et dépende d'une combinaison d'une recette et d'une unité de traitement. [MÉTHODE DE RÉSOLUTION DE PROBLÈMES] Dans la méthode d'analyse, les caractéristiques des résultats d'exposition, par exemple la précision de la largeur de ligne et la précision du chevauchement, sont détectées de manière discrétionnaire à partir des résultats du traitement d'exposition par lot. Les caractéristiques sont classées par association avec, par exemple, une recette et une unité de traitement dans l'équipement d'exposition et un suivi sur une combinaison de ceux-ci qui sont liés au moment où le processus d'exposition montrant ces caractéristiques est réalisé. Ensuite, en fonction des résultats classés, on décide si les caractéristiques des résultats de l'exposition dépendent d'une recette spécifique. S'il y a dépendance, lorsqu'un lot utilisant cette recette et cette unité de traitement est alimenté par la suite, un avertissement est apporté ou une correction automatique est réalisée et on évite un traitement de faible précision.
PCT/JP2005/007807 2004-04-28 2005-04-25 Méthode d'analyse, équipement d'exposition et système d'équipement d'exposition WO2005106932A1 (fr)

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US11/587,824 US20080215295A1 (en) 2004-04-28 2005-04-25 Method Of Analysis, Exposure Apparatus, And Exposure Apparatus System
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US20080215295A1 (en) 2008-09-04
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EP1753017A1 (fr) 2007-02-14
EP1753017A4 (fr) 2008-03-12
TW200607002A (en) 2006-02-16

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