TW200607002A - Analysis method, exposing equipment and exposing equipment system - Google Patents

Analysis method, exposing equipment and exposing equipment system

Info

Publication number
TW200607002A
TW200607002A TW094113595A TW94113595A TW200607002A TW 200607002 A TW200607002 A TW 200607002A TW 094113595 A TW094113595 A TW 094113595A TW 94113595 A TW94113595 A TW 94113595A TW 200607002 A TW200607002 A TW 200607002A
Authority
TW
Taiwan
Prior art keywords
recipe
exposing
analysis method
process unit
results
Prior art date
Application number
TW094113595A
Other languages
English (en)
Inventor
Kenichi Shiraishi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200607002A publication Critical patent/TW200607002A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW094113595A 2004-04-28 2005-04-28 Analysis method, exposing equipment and exposing equipment system TW200607002A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004133600 2004-04-28

Publications (1)

Publication Number Publication Date
TW200607002A true TW200607002A (en) 2006-02-16

Family

ID=35241923

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094113595A TW200607002A (en) 2004-04-28 2005-04-28 Analysis method, exposing equipment and exposing equipment system

Country Status (7)

Country Link
US (1) US20080215295A1 (zh)
EP (1) EP1753017A4 (zh)
JP (1) JPWO2005106932A1 (zh)
KR (1) KR20070007950A (zh)
CN (1) CN1969370A (zh)
TW (1) TW200607002A (zh)
WO (1) WO2005106932A1 (zh)

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US7440076B2 (en) * 2005-09-29 2008-10-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
WO2007086511A1 (ja) * 2006-01-30 2007-08-02 Nikon Corporation 処理条件決定方法及び装置、表示方法及び装置、処理装置、測定装置及び露光装置、基板処理システム、並びにプログラム及び情報記録媒体
DE102006009263A1 (de) * 2006-02-28 2007-09-06 Siemens Ag System und Verfahren zur Analyse des Laufzeitverhaltens eines Steuerungsprogramms für einen Fertigungsprozess
JP5127507B2 (ja) * 2007-02-27 2013-01-23 キヤノン株式会社 情報処理装置、情報処理方法、プログラムおよび露光システム
US8239152B2 (en) * 2007-02-27 2012-08-07 Canon Kabushiki Kaisha Information processing apparatus, information processing method, and computer program product
JP2008300777A (ja) * 2007-06-04 2008-12-11 Tokyo Electron Ltd 基板の処理方法、基板の処理装置及びコンピュータ読み取り可能な記憶媒体
EP2151727B1 (en) * 2008-08-08 2013-05-01 Siemens Aktiengesellschaft Method for displaying time based signals
JP2010283157A (ja) * 2009-06-04 2010-12-16 Canon Inc 露光装置及びデバイス製造方法
JP2011022309A (ja) * 2009-07-15 2011-02-03 Nsk Ltd 露光装置の制御方法
US9645391B2 (en) 2013-11-27 2017-05-09 Tokyo Electron Limited Substrate tuning system and method using optical projection
US9646898B2 (en) * 2013-11-27 2017-05-09 Tokyo Electron Limited Methods for treating a substrate by optical projection of a correction pattern based on a detected spatial heat signature of the substrate
US9483547B1 (en) * 2014-05-30 2016-11-01 Yummly, Inc. Clustering and display of recipes
CN105700290B (zh) * 2014-11-27 2020-02-07 中芯国际集成电路制造(上海)有限公司 光罩的制作方法
KR20160134259A (ko) 2015-05-15 2016-11-23 김종표 층간 소음을 저감하는 완충재 설치방법 및 완충재
CN109073992B (zh) * 2016-04-22 2021-09-28 Asml荷兰有限公司 堆叠差异的确定和使用堆叠差异的校正
JP7183195B2 (ja) * 2018-02-08 2022-12-05 東京エレクトロン株式会社 情報処理装置、プログラム、プロセス処理実行装置及び情報処理システム
JP6808684B2 (ja) * 2018-06-14 2021-01-06 キヤノン株式会社 情報処理装置、判定方法、プログラム、リソグラフィシステム、および物品の製造方法
CN112764316B (zh) * 2019-10-21 2024-05-14 联华电子股份有限公司 步进曝光机的控制设备与控制方法

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JPH0669017B2 (ja) 1985-10-08 1994-08-31 株式会社ニコン 位置合わせ方法
JP3336436B2 (ja) 1991-04-02 2002-10-21 株式会社ニコン リソグラフィシステム、情報収集装置、露光装置、及び半導体デバイス製造方法
US5586059A (en) * 1995-06-07 1996-12-17 Advanced Micro Devices, Inc. Automated data management system for analysis and control of photolithography stepper performance
JPH10106917A (ja) * 1996-10-02 1998-04-24 Toshiba Corp 半導体装置製造用生産システム
JPH11288879A (ja) * 1998-02-04 1999-10-19 Hitachi Ltd 露光条件決定方法とその装置ならびに半導体装置の製造方法
US6493645B1 (en) * 2000-01-11 2002-12-10 Infineon Technologies North America Corp Method for detecting and classifying scratches occurring during wafer semiconductor processing
JP2001351848A (ja) * 2000-06-07 2001-12-21 Tokyo Electron Ltd 基板処理システム及び基板処理方法
JP2002134395A (ja) * 2000-10-25 2002-05-10 Sony Corp 半導体装置の製造方法および半導体装置の製造システム
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US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US6858361B2 (en) * 2002-03-01 2005-02-22 David S. L. Mui Methodology for repeatable post etch CD in a production tool
JP2003324055A (ja) * 2002-04-30 2003-11-14 Canon Inc 管理システム及び装置及び方法並びに露光装置及びその制御方法
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JP2004040039A (ja) * 2002-07-08 2004-02-05 Sony Corp 露光方法の選択方法
JP2004103674A (ja) * 2002-09-06 2004-04-02 Renesas Technology Corp 半導体集積回路装置の製造方法
JP4317701B2 (ja) * 2003-03-12 2009-08-19 東京エレクトロン株式会社 処理結果の予測方法及び予測装置

Also Published As

Publication number Publication date
JPWO2005106932A1 (ja) 2008-03-21
WO2005106932A1 (ja) 2005-11-10
KR20070007950A (ko) 2007-01-16
US20080215295A1 (en) 2008-09-04
CN1969370A (zh) 2007-05-23
EP1753017A1 (en) 2007-02-14
EP1753017A4 (en) 2008-03-12

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