WO2005086215A1 - プラズマ処理方法及びコンピュータ記憶媒体 - Google Patents
プラズマ処理方法及びコンピュータ記憶媒体 Download PDFInfo
- Publication number
- WO2005086215A1 WO2005086215A1 PCT/JP2005/003488 JP2005003488W WO2005086215A1 WO 2005086215 A1 WO2005086215 A1 WO 2005086215A1 JP 2005003488 W JP2005003488 W JP 2005003488W WO 2005086215 A1 WO2005086215 A1 WO 2005086215A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- plasma processing
- processing method
- supply
- substrate
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims description 22
- 238000005121 nitriding Methods 0.000 claims abstract description 51
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims description 44
- 238000000137 annealing Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 30
- 238000003860 storage Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 4
- 238000010849 ion bombardment Methods 0.000 abstract description 2
- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 abstract 1
- 239000012141 concentrate Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000010453 quartz Substances 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000036039 immunity Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
Definitions
- the nitrogen distribution can be unevenly distributed on the electrode (front surface) side, so that a flat band voltage comparable to that of the thermally oxidized film can be obtained. For this reason, the advantages of plasma, such as easy diffusion of impurities at the surface, are obtained.
- a planar antenna member for example, a disk-shaped radial line slot antenna 30 is provided, and further, a slow wave plate 31 is provided on the upper surface of the radial line slot antenna 30.
- the retardation plate 31 is further provided with a conductive cover 32 for covering the retardation plate 31.
- the cover 32 is provided with a cooling unit to cool the cover 32 and the transmission window 20.
- the radial line slot antenna 30 is composed of a thin disk of copper coated or coated with a conductive material, for example, Ag or Au, and a number of slits 33 are arranged in a spiral or concentric shape, for example. Is formed.
- the wafer W thus plasma-nitrided may be subsequently annealed.
- Various annealing devices can be used for the annealing process.
- a lamp annealing type annealing device 51 shown in FIG. 2 can be used.
- the thickness of the base oxide film is 1. Onm, the pressure in the processing vessel is 50 mTorr (6.65 Pa), and the nominal is 1500 W.
- the gas used for plasma nitriding was a flow rate ratio of 1000 sccm / 40 sccm for argon gas and nitrogen gas. Assuming that the plasma nitriding time is 5, 10, 20, and 40 seconds, the nitrogen concentration in the gate oxide film at that time is 5 at%, 9 at%, 11 at%, and 15 at%, respectively.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Analytical Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05719803A EP1722406A1 (en) | 2004-03-03 | 2005-03-02 | Plasma processing method and computer storing medium |
JP2006510687A JP5101103B2 (ja) | 2004-03-03 | 2005-03-02 | プラズマ処理方法及びコンピュータ記憶媒体 |
CN2005800068658A CN1926670B (zh) | 2004-03-03 | 2005-03-02 | 等离子体处理方法 |
US11/514,236 US7723241B2 (en) | 2004-03-03 | 2006-09-01 | Plasma processing method and computer storage medium |
US12/757,802 US7897518B2 (en) | 2004-03-03 | 2010-04-09 | Plasma processing method and computer storage medium |
US13/019,093 US8183165B2 (en) | 2004-03-03 | 2011-02-01 | Plasma processing method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-058945 | 2004-03-03 | ||
JP2004058945 | 2004-03-03 | ||
JP2004-268236 | 2004-09-15 | ||
JP2004268236 | 2004-09-15 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/514,236 Continuation-In-Part US7723241B2 (en) | 2004-03-03 | 2006-09-01 | Plasma processing method and computer storage medium |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005086215A1 true WO2005086215A1 (ja) | 2005-09-15 |
Family
ID=34921660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/003488 WO2005086215A1 (ja) | 2004-03-03 | 2005-03-02 | プラズマ処理方法及びコンピュータ記憶媒体 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7723241B2 (ja) |
EP (1) | EP1722406A1 (ja) |
JP (1) | JP5101103B2 (ja) |
KR (2) | KR100956467B1 (ja) |
CN (2) | CN102181819A (ja) |
TW (1) | TW200540992A (ja) |
WO (1) | WO2005086215A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008081723A1 (ja) * | 2006-12-28 | 2008-07-10 | Tokyo Electron Limited | 絶縁膜の形成方法および半導体装置の製造方法 |
WO2008081724A1 (ja) * | 2006-12-28 | 2008-07-10 | Tokyo Electron Limited | 絶縁膜の形成方法および半導体装置の製造方法 |
US7723241B2 (en) | 2004-03-03 | 2010-05-25 | Tokyo Electron Limited | Plasma processing method and computer storage medium |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200511430A (en) * | 2003-05-29 | 2005-03-16 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
US20100239781A1 (en) * | 2007-05-29 | 2010-09-23 | Masaki Sano | Method for in-chamber preprocessing in plasma nitridation processing, plasma processing method, and plasma processing apparatus |
JP5520455B2 (ja) * | 2008-06-11 | 2014-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5357486B2 (ja) | 2008-09-30 | 2013-12-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR101851199B1 (ko) | 2011-12-28 | 2018-04-25 | 삼성전자주식회사 | 질화된 게이트 절연층을 포함하는 반도체 소자 및 그 제조 방법 |
JP5490087B2 (ja) * | 2011-12-28 | 2014-05-14 | 東京エレクトロン株式会社 | マイクロ波加熱処理装置および処理方法 |
CN106159036A (zh) * | 2015-04-13 | 2016-11-23 | 中兴通讯股份有限公司 | 一种硅基光电子系统的制备方法 |
JP2019009305A (ja) * | 2017-06-26 | 2019-01-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN112864007B (zh) * | 2019-11-28 | 2022-04-12 | 长鑫存储技术有限公司 | 半导体结构的形成方法 |
Citations (3)
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JP2002222941A (ja) * | 2001-01-24 | 2002-08-09 | Sony Corp | Mis型半導体装置及びその製造方法 |
JP2003077915A (ja) * | 2001-09-04 | 2003-03-14 | Matsushita Electric Ind Co Ltd | 絶縁膜の形成方法及びその形成装置 |
JP2004022902A (ja) * | 2002-06-18 | 2004-01-22 | Fujitsu Ltd | 半導体装置の製造方法 |
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JPH0627345B2 (ja) * | 1988-11-18 | 1994-04-13 | 住友金属工業株式会社 | プラズマプロセス装置 |
JPH08288271A (ja) * | 1995-04-18 | 1996-11-01 | Sony Corp | 成膜方法およびこれに用いる成膜装置 |
KR100537679B1 (ko) * | 1996-07-12 | 2006-04-06 | 동경 엘렉트론 주식회사 | 성막장치 및 성막방법 |
US6143081A (en) | 1996-07-12 | 2000-11-07 | Tokyo Electron Limited | Film forming apparatus and method, and film modifying apparatus and method |
KR100745495B1 (ko) * | 1999-03-10 | 2007-08-03 | 동경 엘렉트론 주식회사 | 반도체 제조방법 및 반도체 제조장치 |
JP2002208593A (ja) | 2001-01-11 | 2002-07-26 | Tokyo Electron Ltd | シリコン酸窒化膜形成方法 |
JP3619795B2 (ja) * | 2001-08-31 | 2005-02-16 | 株式会社東芝 | 半導体装置の製造方法 |
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TWI225668B (en) | 2002-05-13 | 2004-12-21 | Tokyo Electron Ltd | Substrate processing method |
WO2003098678A1 (fr) | 2002-05-16 | 2003-11-27 | Tokyo Electron Limited | Procede de traitement de substrat |
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2005
- 2005-03-02 WO PCT/JP2005/003488 patent/WO2005086215A1/ja not_active Application Discontinuation
- 2005-03-02 CN CN2011100759456A patent/CN102181819A/zh active Pending
- 2005-03-02 KR KR1020087019543A patent/KR100956467B1/ko not_active IP Right Cessation
- 2005-03-02 JP JP2006510687A patent/JP5101103B2/ja not_active Expired - Fee Related
- 2005-03-02 KR KR1020067017788A patent/KR100956466B1/ko not_active IP Right Cessation
- 2005-03-02 EP EP05719803A patent/EP1722406A1/en not_active Withdrawn
- 2005-03-02 CN CN2005800068658A patent/CN1926670B/zh not_active Expired - Fee Related
- 2005-03-03 TW TW094106460A patent/TW200540992A/zh not_active IP Right Cessation
-
2006
- 2006-09-01 US US11/514,236 patent/US7723241B2/en not_active Expired - Fee Related
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2010
- 2010-04-09 US US12/757,802 patent/US7897518B2/en not_active Expired - Fee Related
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2011
- 2011-02-01 US US13/019,093 patent/US8183165B2/en not_active Expired - Fee Related
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JP2003077915A (ja) * | 2001-09-04 | 2003-03-14 | Matsushita Electric Ind Co Ltd | 絶縁膜の形成方法及びその形成装置 |
JP2004022902A (ja) * | 2002-06-18 | 2004-01-22 | Fujitsu Ltd | 半導体装置の製造方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US7723241B2 (en) | 2004-03-03 | 2010-05-25 | Tokyo Electron Limited | Plasma processing method and computer storage medium |
US7897518B2 (en) | 2004-03-03 | 2011-03-01 | Tokyo Electron Limited | Plasma processing method and computer storage medium |
US8183165B2 (en) | 2004-03-03 | 2012-05-22 | Tokyo Electron Limited | Plasma processing method |
WO2008081723A1 (ja) * | 2006-12-28 | 2008-07-10 | Tokyo Electron Limited | 絶縁膜の形成方法および半導体装置の製造方法 |
WO2008081724A1 (ja) * | 2006-12-28 | 2008-07-10 | Tokyo Electron Limited | 絶縁膜の形成方法および半導体装置の製造方法 |
JPWO2008081723A1 (ja) * | 2006-12-28 | 2010-04-30 | 東京エレクトロン株式会社 | 絶縁膜の形成方法および半導体装置の製造方法 |
JPWO2008081724A1 (ja) * | 2006-12-28 | 2010-04-30 | 東京エレクトロン株式会社 | 絶縁膜の形成方法および半導体装置の製造方法 |
US20100323529A1 (en) * | 2006-12-28 | 2010-12-23 | Tokyo Electron Limited | Method for forming insulating film and method for manufacturing semiconductor device |
US8158535B2 (en) | 2006-12-28 | 2012-04-17 | Tokyo Electron Limited | Method for forming insulating film and method for manufacturing semiconductor device |
US8247331B2 (en) | 2006-12-28 | 2012-08-21 | Tokyo Electron Limited | Method for forming insulating film and method for manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US20070059944A1 (en) | 2007-03-15 |
KR100956466B1 (ko) | 2010-05-07 |
US7897518B2 (en) | 2011-03-01 |
JPWO2005086215A1 (ja) | 2008-01-24 |
CN102181819A (zh) | 2011-09-14 |
KR20080079339A (ko) | 2008-08-29 |
KR20060116030A (ko) | 2006-11-13 |
KR100956467B1 (ko) | 2010-05-07 |
CN1926670B (zh) | 2011-05-18 |
US7723241B2 (en) | 2010-05-25 |
US20110124202A1 (en) | 2011-05-26 |
US8183165B2 (en) | 2012-05-22 |
TWI368945B (ja) | 2012-07-21 |
JP5101103B2 (ja) | 2012-12-19 |
US20100196627A1 (en) | 2010-08-05 |
CN1926670A (zh) | 2007-03-07 |
EP1722406A1 (en) | 2006-11-15 |
TW200540992A (en) | 2005-12-16 |
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