WO2005086184A1 - 電磁雑音抑制薄膜 - Google Patents
電磁雑音抑制薄膜 Download PDFInfo
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- WO2005086184A1 WO2005086184A1 PCT/JP2005/003991 JP2005003991W WO2005086184A1 WO 2005086184 A1 WO2005086184 A1 WO 2005086184A1 JP 2005003991 W JP2005003991 W JP 2005003991W WO 2005086184 A1 WO2005086184 A1 WO 2005086184A1
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- thin film
- electromagnetic noise
- noise suppressing
- columnar structure
- suppressing thin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/14—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys
- H01F1/20—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder
- H01F1/28—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder dispersed or suspended in a bonding agent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/023—Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
- H05K1/0233—Filters, inductors or a magnetic substance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0083—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising electro-conductive non-fibrous particles embedded in an electrically insulating supporting structure, e.g. powder, flakes, whiskers
Definitions
- the present invention relates to a magnetic material having a high magnetic permeability in a high frequency range, and more particularly, to an electromagnetic noise suppressing thin film that suppresses a high-frequency current that becomes noise.
- EMC has been applied to electronic devices that operate in the quasi-microwave band (several hundred MHz to several GHz), such as CPUs used in mobile phones and PCs.
- a material having high magnetic loss ") there is an urgent need to develop a material having high magnetic loss "), a magnetic resonance frequency in the above-described region, and a high electrical resistance.
- Typical magnetic materials that can be used at high frequencies in the past include fly, metal thin films, multilayer films combining metals and non-magnetic insulators, and Dara-Yura thin films.
- Flight has a very high electric resistance and generates very little eddy current at high frequencies, so it can be used in a Balta shape.
- the frequency becomes higher than several tens of MHz, resonance vibration of domain walls and spin resonance phenomenon occur, and so-called snake limit appears.
- it is effective to increase the shape magnetic anisotropy by increasing the shape magnetic anisotropy by raising the thickness of the thin film to several zm or less. It requires a process of about C, making it difficult to form thin films, and there has been no practical application.
- the thickness of the film is limited as the wave becomes. Especially at GHz and above, eddy current problems will occur unless the film thickness is less than 0.1 ⁇ m.
- the above-described multilayer film that is, a thin film material in which an eddy current is suppressed by laminating a metal thin film and an insulating thin film such as an oxide, is used. Its use is limited due to the complexity of the process.
- the Dala-Yura thin film is a thin film having a recently developed Dala-Yura structure, in which fine particles of a ferromagnetic metal having a nearly isotropic sphere are dispersed in a base material such as an oxide. It has several orders of magnitude higher electrical resistance (10 3 [Q cm]) than metal.
- the dala-yura structure is a structure in which magnetic metal particles having a diameter of lOnm or less are precipitated in an oxidized product, and is specifically made by a thin film manufacturing technique such as a sputtering method.
- the Dara-Yura thin film can have high magnetic resistance and high magnetic anisotropy due to anisotropic coupling of fine particles, thereby suppressing or controlling the occurrence of spin resonance in the GHz band. Therefore, the Dala-Yura single thin film is considered to have a wider range of applications than conventional thin film materials.
- the ferromagnetic metal fine particles that form the dala-yura structure have a diameter of several nanometers per se, and lose ferromagnetism by thermal disturbance at room temperature in an isolated state (superparamagnetic phenomenon). .
- the fine particles exhibit magnetic properties as a group, and exhibit high magnetic permeability. That is, in order to obtain a property as a high magnetic permeability thin film, magnetic coupling between fine particles is indispensable.
- This magnetic coupling requires the presence of a metallic coupling between the fine particles in the insulator, which lowers the electrical resistance. For this reason, high V ⁇ permeability, high !, and electric resistance are contradictory parameters, and the Dara-Yura structure has an upper limit on electric resistance.
- an object of the present invention is to provide an electromagnetic noise suppression thin film having a columnar structure capable of increasing electric resistance while suppressing superparamagnetism and controlling a spin resonance phenomenon.
- the present inventors have determined the design policy of the electromagnetic noise suppressing material in order to achieve the above-mentioned object, have found a new technique capable of implementing the same, and have accomplished the present invention.
- a columnar structure made of a pure metal of Fe, Co, or Ni or an alloy containing at least 20% by weight thereof is an oxide, a nitride, or a fluoride!
- An electromagnetic noise suppressing thin film characterized by having a structure embedded in an inorganic insulating matrix, which is a mixture thereof, is obtained.
- FIG. 1 A thin film having a dala-yura structure formed by a sputtering method of Comparative Example (i) and a vapor deposition method of Examples (a), (c) and (f) of the present invention 5 is an electron micrograph of a columnar structure thin film formed by the method described above.
- FIG. 2A shows the frequency characteristics of the magnetic permeability of the thin film for the sputtered film of Comparative Example (i) and the vapor-deposited films of Examples (a), (c), (f) and (g) of the present invention, respectively.
- FIG. 2A shows the frequency characteristics of the magnetic permeability of the thin film for the sputtered film of Comparative Example (i) and the vapor-deposited films of Examples (a), (c), (f) and (g) of the present invention, respectively.
- FIG. 2B is a diagram schematically illustrating the characteristics due to the difference in the film forming method.
- FIG. 3 is a magnetic microscope photograph of the upper surfaces of the thin films of Examples (c) and (m) obtained by the vapor deposition method of the present invention.
- FIG. 4A is a schematic view of a sample having a dimensional ratio (LZD, L: length of a columnar structure, D: width of the columnar structure).
- FIG. 4B is a diagram in which the magnetic permeability and the resonance frequency of the sample shown in FIG. 4A are plotted for different dimensional ratios.
- FIG. 4C is a diagram in which the magnetic permeability and the resonance frequency of the sample shown in FIG. 4A are plotted for different dimensional ratios.
- FIG. 5 is a schematic diagram showing a case where one sample is manufactured by laminating samples having different dimensional ratios.
- FIG. 6A is a diagram plotting expected magnetic permeability and resonance frequency in each layer having different dimensional ratios shown in FIG. 5.
- FIG. 6B is a diagram showing the measurement results of the magnetic permeability of the sample shown in FIG. 5.
- FIG. 7A is a diagram plotting S11 with respect to the electric resistivity in the example of the present invention.
- FIG. 7B is a diagram plotting S21 with respect to the electric resistivity in the example of the present invention.
- FIG. 8A is a diagram for explaining an example in which the in-plane directivity of the magnetic permeability is controlled by tilting the substrate, and is a diagram illustrating a deposition source, a substrate, and a substrate tilt angle.
- FIG. 8B is a diagram for explaining an example in which the in-plane directivity of the magnetic permeability is controlled by tilting the substrate, and is a diagram showing the measurement direction of ⁇ .
- FIG. 9A is a diagram showing the in-plane angle dependence of the magnetic permeability of a sample in which the in-plane directivity of the magnetic permeability is controlled by tilting the substrate shown in FIG. 8A.
- FIG. 9A is a diagram showing the in-plane angle dependence of the magnetic permeability of a sample in which the in-plane directivity of the magnetic permeability is controlled by tilting the substrate shown in FIG. 8A.
- FIG. 10 is a diagram showing an example of a schematic device configuration for verifying the effect of suppressing electromagnetic noise.
- FIG. 11A is a view showing a transmission characteristic S 11 (reflection) when an electromagnetic noise suppressing thin film manufactured based on the present invention is placed on a transmission line.
- FIG. 11B is a view showing a transmission characteristic S 21 (transmission) when an electromagnetic noise suppressing thin film manufactured based on the present invention is placed on a transmission line.
- FIG. 12A is a top view of an active device mounted circuit board having an electromagnetic noise suppressing thin film formed on a ground line according to an embodiment of the present invention.
- FIG. 12B is a side view of the electromagnetic noise suppressing thin film of FIG. 12 ⁇ .
- FIG. 13 is a view showing a radiation noise reduction effect of the electromagnetic noise suppression thin film of FIG. 12B.
- Kus is the magnitude of the magnetic anisotropy (shape magnetic anisotropy) caused by the shape of the fine particles
- K is the magnetic anisotropy inherent to Kus and the metal fine particles.
- Equation (3) is the magnitude of the shape magnetic anisotropy expressed by the vector sum.
- the magnitude of the shape magnetic anisotropy is represented by the following equation (3).
- Nd is a demagnetizing field constant
- Ms is a saturation magnetic field
- the metal fine particles form a so-called columnar structure such as a rod extending in the longitudinal direction or a column or ellipsoid close to the rod, and when the length is sufficiently long, Nd becomes longer in the longitudinal direction. Since Ku is 4 ⁇ and 0 in the direction perpendicular to the length, Kus is expressed by the following equation (4).
- the dala-niura structure is formed by arranging rods formed of spherical aggregates, the critical volume of superparamagnetism can be reduced. It is possible to increase the electric resistance without requiring any special coupling.
- the magnetic resonance frequency is
- the present inventors have accomplished the present invention as a new technology capable of realizing the above-described design policy.
- a columnar structure made of a pure metal of Fe, Co, or Ni or an alloy containing at least 20% by weight of the same is formed of an oxide, a nitride, a fluoride, or a compound thereof.
- An object of the present invention is to provide an electromagnetic noise suppressing thin film having a structure embedded in an inorganic insulating matrix which is a mixture.
- the columnar structure is a soft magnetic material.
- oxides, nitrides and fluorides are used as the insulating matrix because these materials have low free energy of formation and are thermally stable, so that phase separation during film formation becomes clear by using these materials. Because.
- the columnar structure also has an alloying force composed of pure metals of Fe, Co, or Ni, or a combination thereof.
- the formed columnar structure has a large shape magnetic anisotropy, this is a main factor that determines the magnetic characteristics.
- crystal magnetic anisotropy and magnetic anisotropy caused by crystal distortion also have some influence, so that these deteriorate the soft magnetic properties to a certain extent. Therefore, when higher magnetic permeability is expected for a material, the magnetic anisotropy or magnetic resistance of NiFe (75 ⁇ x ⁇ 85at%) etc.
- the columnar structure has a single magnetic domain structure. If the columnar structure has a single magnetic domain structure, domain wall resonance does not appear. Permeability is expected. Also, control of ferromagnetic resonance frequency by spin magnetic resonance Easy. And the dimensional ratio of the columnar structure (LZD, L: length of the columnar structure,
- the width of the columnar structure is preferably 1 and LZD ⁇ 1000! /.
- the superparamagnetism cannot be suppressed because the magnetic easy axis is not in the length direction and is not uniaxially anisotropic.
- the length L of the columnar structure is considered to be almost equal to the entire film thickness.
- the limit of the film thickness when the film is formed by the vapor deposition method is about 10 m in view of the mechanical strength.
- the diameter D is minimum when the columnar structure has a single magnetic domain structure, and the maximum LZD is 1000 when the unit lattice of the constituent elements and the film strength are considered.
- the columnar structure has an axis of easy magnetization in a length direction, and the plurality of columnar structures stand up through the inorganic insulating matrix.
- the gap (thickness of the insulating base existing in the gap) between adjacent columnar structures in the diameter direction of the plurality of columnar structures is in the range of lnm to 100 nm. This is because at lnm or less, magnetic exchange coupling between the columnar structures acts to degrade the frequency characteristic of magnetic permeability, and at lOOnm or less, the component exhibiting magnetism decreases. This is because the noise suppression effect decreases.
- the target resonance frequency that is, a dimension ratio (LZD, L: length of the columnar structure, D : It is effective to stack a plurality of layers composed of columnar structures having the same width. These layers (that is, the layers in which the columnar structures are embedded in the matrix) are called the columnar structure layers.
- the gap thickness of the insulating matrix existing in the gap in the laminating direction of the columnar structure layers stacked on each other via the insulating matrix is in the range of lnm to 100 nm.
- each of the columnar structure layers has a dimensional ratio (LZD, L: length of the columnar structure).
- L the electromagnetic noise suppressing thin film having the multilayer structure
- the electromagnetic noise suppressing thin film having the multilayer structure has a plurality of columns corresponding to the number of the columnar layer. Having a magnetic resonance frequency of
- s I ⁇ 60 ⁇ m be the desired I ⁇ I ⁇ 6 ppm because a higher magnetic permeability can be obtained.
- the electrical resistivity of the magnetic noise suppressing thin film at DC is preferably in the range of 10 2 to 10 9 ⁇ cm, and more preferably in the range of 10 4 to 10 7 / ⁇ ⁇ cm in terms of electromagnetic noise suppressing performance. .
- an increase in the electrical resistivity means a monotonous increase in the volume occupancy of the insulating matrix. Therefore, since in the above 10 Omega cm no magnetic exchange coupling between the gap by insulating matrix is sufficiently wide the columnar structure, also equal to or less than 10 7 mu Q cm, columnar structure for insulating matrix Since the volume occupancy of this is sufficiently high, it is possible to maintain excellent electromagnetic noise suppression performance.
- a conventional thin film having a dura-yura structure is manufactured by a sputtering method because it is necessary to mix an oxide and a ferromagnetic metal at the same time.
- the oxide and the ferromagnetic metal are uniformly mixed and become almost amorphous. For this reason, most dala-yura materials have obtained the above-mentioned dala-yura structure through a phase separation process by heat treatment.
- the columnar shape of an insulating base material such as an oxide, a nitride, or a fluoride and a ferromagnetic metal made of an alloy of pure metals of Fe, Ni, and Co or a combination thereof is used.
- the structural material is produced, for example, by a multi-source evaporation method.
- the present inventors have found that the vapor deposition method has much lower momentum of the atoms or molecules of the raw material reaching the substrate than the sputtering method. We have found that it is possible to form a columnar structure in the matrix to produce a thin film with excellent electromagnetic noise suppression performance.
- Particles obtained by the sputter method have an almost spherical amorphous shape, whereas the vapor deposition method causes phase separation even without heat treatment, and the ferromagnetic metal forms a long columnar structure. Therefore, as described above, even a ferromagnetic material isolated due to shape magnetic anisotropy has high magnetic permeability.
- the shape magnetic anisotropy may be changed by controlling the length of the columnar structure. Open the shutter of the ferromagnetic evaporation source for the length of the columnar structure! Therefore, the length L of the columnar structure can be controlled by the shutter opening / closing time.
- the width D can be controlled by the composition and the substrate temperature
- the dimensional ratio (LZD, L: length of the columnar structure, D: width of the columnar structure) can be controlled.
- LZD length of the columnar structure
- D width of the columnar structure
- the electromagnetic noise suppressing thin film of the present invention has magnetic anisotropy in the film thickness direction and has no directivity in the film plane.
- the electromagnetic noise suppressing thin film is characterized by exhibiting isotropic magnetic permeability in the film plane, and is very effective in requiring isotropic noise suppressing performance.
- the electromagnetic waves having different modes are selectively and efficiently suppressed, it may be more effective to have directivity in a plane.
- the angle of the particles incident on the substrate can be controlled by changing the angle of the substrate with respect to the evaporation source, so that in-plane directivity can be given according to the application of the material. It is possible.
- magnetic anisotropy having a desired strength is provided in a desired direction from the film thickness direction to the in-plane direction, and the direction, magnitude, resonance frequency, and further the frequency band of the magnetic permeability are determined. It has features that it can be designed and controlled, and that there is no need for heat treatment, so that there is a wide range of choices of substrates and that it can be manufactured at a higher speed.
- the vapor deposition apparatus used in this experiment is provided with a plurality of vapor deposition sources, and can perform multi-source vapor deposition. By co-evaporating these, the electromagnetic noise suppressing thin film can be obtained.
- the composition is controlled by adjusting the respective film forming rates.
- shutters are provided for each evaporation source that can be operated only on the substrate side, and these can be operated independently, so that a single film, a composite film, a film obtained by laminating these films, etc. can be freely manufactured. did it.
- a pure metal or alloy was used as the material forming the columnar structure
- an insulator was used as the material forming the insulating matrix
- a deposition source was installed for each element. With respect to nitrogen, fluorine, and the like, it is also possible to form an insulating matrix by using a reactive vapor deposition method by introducing a gas.
- Table 1 is a list of samples according to the examples having different compositions.
- the Ni-Fe alloy has a columnar structure.
- composition ratio of which indicates that Ni—Fe: B 0 43: 57.
- all the samples of the present invention were formed by a multi-source evaporation method using an electron beam evaporation apparatus. Further, the vacuum degree during ultimate vacuum and deposition during manufacturing was respectively 1 X 10- 5 Torr or less or less and 1 X 10- 4 Torr. Since the substrate is water-cooled and the substrate is not particularly heated, the substrate surface is always kept at 100 ° C. or less. In all samples, the total film thickness is approximately 1.5 ⁇ m. Samples (a) and (b) were prepared by using polyimide for the substrate, while (c) were prepared by using glass for (1).
- Electromagnetic noise suppressing thin film according to the present invention (a) NiFeBOeCoMgF
- Fig. 1 shows an electron micrograph of the thin film having a dala-yura structure (i) NiFeBO observed in the film surface, which was formed by the film method and heat-treated at 300 ° C for 1 hour.
- Table 1 shows S11 (reflection) and S21 (transmission), which are transmission characteristics when each sample is arranged on a transmission line (microstrip line) as an electromagnetic noise suppressing thin film.
- S21 one of the parameters exhibiting excellent electromagnetic noise suppression characteristics. If this parameter is greatly attenuated, it indicates that the noise attenuation effect is high.
- S11 Another indispensable property is S11, which Depends greatly on the value of the resistor. If S11 is large, secondary noise such as radiation may occur due to reflection of conducted noise.
- the notation for the effect of S21 is “large attenuation” or “small attenuation”. “Large attenuation” means that “S21” indicates a lower value (as in the present embodiment, when S21 is a negative value, the absolute value is large), that is, the noise suppression effect Means higher.
- the notation for the effect of S11 is “small” or “large”.
- “Small” means that "S11” indicates a lower value (as in the present embodiment, if S11 is a negative value, the absolute value is large), that is, the reflection amount is small. Therefore, it is a characteristic desired as an electromagnetic noise suppressing thin film.
- Comparative Example (j) -Compared to (1), in the example of the present invention, the displacement also obtained a large attenuation in S21, indicating that the present example has excellent noise suppression characteristics. S11 also has a smaller value than Comparative Example (i) due to its high resistance. From these, it can be seen that the examples of the present invention show an excellent noise suppression effect. In the case of (a)-(g) in which the alloy forming the columnar structure is only Fe, Co, and Ni, a larger value is obtained in S21. Attenuation was obtained, especially for Ni Fe
- the electromagnetic noise suppressing thin film according to the present invention can be formed not only on an inorganic insulating material such as a glass substrate, but also on a metal material or a resin, and the substrate material is not particularly limited. . Since the columnar structure layer could be formed even when formed on a material such as polyimide used for FPC, the electromagnetic noise suppressing thin film of the present invention can be applied to the surface resin such as a circuit board or a cable. It is possible and can be applied to various uses.
- Table 2 shows the results of comparing the noise suppression effect due to the difference in the magnetic domain structure.
- the manufacturing condition of (m) is the same as that of (c) with respect to the degree of vacuum, the substrate temperature and the total film thickness.
- the single domain and the multiple domains are controlled by changing the deposition rate of the columnar structure (metal) and the insulating conductor.
- (m) shows that the columnar structure shows multi-domain behavior from the results of the domain structure observation, but in (c), the domain is not observed because the magnetic domain is too small to be observed. It can be seen that the size is several tens nm or less. From this, it is considered that the columnar structure shows the behavior of a single magnetic domain in (c).
- S11 in (c) showing the behavior of a single domain is preferred as an electromagnetic noise suppressing thin film that is smaller than (m) showing the behavior of multiple domains, and has a V ⁇ characteristic. Power.
- FIGS. 4A, 4B and 4C show the dimensional ratios of the columnar structures (LZD, L: length of the columnar structures, D: width of the columnar structures, in order to control the magnetic permeability. ).
- LZD length of the columnar structures
- D width of the columnar structures
- the dimensional ratio is controlled by adjusting the film forming rate of each of them, and adjusting the opening time of a shutter arranged on a pure metal or an alloy forming the columnar structure.
- the gap 42 in the diameter direction of the columnar structure 41 is controlled by the substrate temperature D and the force controlled by the ratio of the pure metal or alloy forming the columnar structure to the insulator. , Heat the substrate However, in all the samples whose data are shown in FIGS. 4B and 4C, the ratio of pure metal or alloy is also constant, so that the control is almost constant at 6 nm.
- the gap in the length direction of the columnar structure is formed by depositing only the respective insulators when a shutter disposed on a pure metal or an alloy forming the columnar structure is closed.
- the force at which the magnetic insulating layer 43 was formed was controlled to be constant at 30 nm.
- a film having a structure in which the columnar structure layer is magnetically separated by an insulating layer is obtained.
- the total film thickness is controlled to be approximately 1.5 m. I have. That is, as shown in FIG. 4A, a columnar structure layer having a dimensional ratio of L / D is laminated by being separated in the film thickness direction by an insulator having a thickness of 30 nm. Therefore, it can be seen that the smaller the L / D, the larger the number of layers. This makes it possible to obtain a film exhibiting a high noise suppression effect by stacking these even when the effect is still weaker.
- 4B and 4C are diagrams showing the maximum value of ⁇ "and the fr with respect to the dimensional ratio when the dimensional ratio is changed under the above-described conditions, respectively.
- ⁇ the maximum value of ⁇ "and the fr with respect to the dimensional ratio when the dimensional ratio is changed under the above-described conditions.
- the sample with LZD ⁇ 1 Since the axis of easy magnetization is no longer uniaxial, thermal fluctuations cannot be suppressed, and superparamagnetism is exhibited, so that favorable permeability characteristics as an electromagnetic noise suppressing thin film cannot be obtained. In this case, there is a problem because the thickness of the film is too thick and the peeling tends to be cheaper.
- the results shown here show that in the range of 1 to LZD and 1000, it was difficult with the conventional Dala-Yura thin film, It can be seen that precise control of magnetic susceptibility is possible.
- an electromagnetic noise suppressing thin film exhibiting a noise suppressing effect in a frequency band preferred by controlling the dimensional ratio, which is very controllable can be easily manufactured.
- a force in which the gap between the diameter direction and the length direction in the columnar structure is set to 6 nm and 30 nm, respectively is a force that is a region where magnetic coupling does not work between the columnar structures. Good.
- these gaps are less than 1 nm, the above-described magnetic coupling occurs, so that favorable characteristics as an electromagnetic noise suppressing thin film cannot be obtained.
- the gap is equal to or more than 100 nm, the noise suppressing component is extremely reduced.
- the preferable characteristics as the electromagnetic noise suppressing thin film cannot be obtained.
- these gaps are greater than 100Onm, the electromagnetic noise suppression thin film Almost no effect can be obtained.
- the magnetostatic interaction acting between the columnar structure layers changes, so the data shown in FIGS. 4A and 4B also change. Specifically, for example, when the gap in the length direction was changed while keeping the LZD constant, it was found that when the gap became narrower, fr increased and the magnetic permeability decreased. However, the smaller the gap, the greater the proportion of the magnetic layer in the film, so the decrease in magnetic permeability is small.
- FIG. 5 shows a schematic diagram of a sample manufactured by controlling the dimensional ratio to 10, 15, and 30 in one material.
- the composition of the sample used was Ni Fe Mg F, the ultimate vacuum, The degree of vacuum, the substrate temperature, and the substrate used are the same as in (C).
- the total thickness is about 1.5 m. Length direction formed by MgF in the columnar structure layer
- FIGS. 6A and 6B show the columnar structures with different dimensional ratios, plotting the maximum value of ⁇ "and fr expected for the sample obtained here, based on the results described above.
- the magnetic permeability characteristics of the sample obtained by layering the layers are as follows.
- the magnetic permeability characteristics of the sample obtained here are those of a sample having magnetic resonance points at frequency bands almost as designed, that is, 200 MHz, 300 MHz and 1 GHz.
- the frequency profile of the superposed shape is shown, and the composition of the sample is NiFeMgF.
- FIGS.7A and 7B show the maximum of S11 with respect to the electrical resistivity of the electromagnetic noise suppressing thin film using oxide (O), nitride (N) and fluoride (F) fabricated in this experiment.
- FIG. 4 is a diagram showing values and S21 at 2 GHz. All the sample preparation conditions used for the data shown here were prepared under the same conditions as (c). S11 strongly depends on the electrical resistivity, and tends to decrease monotonically as the resistivity increases.
- FIG. 8A is a schematic diagram of the substrate arrangement with respect to the evaporation source
- FIG. 8B is a schematic diagram of the angle arrangement when measuring the magnetic permeability while changing the angle in the plane with reference to FIG. 8A.
- ⁇ is the angle between the xy plane and the substrate in FIG. 8A
- ⁇ represents the angle in the substrate plane in FIG. 8B.
- FIGS. 9A and 9B are diagrams showing the angle dependence of the in-plane magnetic permeability of the sample manufactured at each ⁇ at this time.
- the magnetic permeability is almost constant regardless of ⁇ and no in-plane directivity appears.
- ⁇ 45.
- the electromagnetic noise suppressing thin film sample 61 obtained by the present invention was placed on a microstrip line 62 formed on an insulating substrate and having a microstrip conductor force. Both ends of 62 are connected to a network analyzer 63 to see S11 and S21.
- the transmission characteristics in Tables 1-2 are also measured by this measurement system.
- Table 3 shows the sample (c) used in this experiment and the comparative example having a dala-yura structure, which was formed by sputtering and heat-treated at 300 ° C for 1 hour. The composition and resistivity are indicated.
- the total film thickness of both samples is 1.5 m.
- Figures 11A and 11B show the results of investigations on S11 and S21 when the samples shown in Table 3 were placed on a microstrip line.
- the measurement result of the transmission characteristic S11 indicating the reflection is almost the same between the example of the present invention and the comparative example. It can be seen that even when a sample having a deviation is used, the reflection amount is at a practical level.
- the transmission characteristic S21 indicating transmission loss shows that the sample of the present invention shows a larger attenuation than the comparative sample, and it can be said that the effect of suppressing electromagnetic noise is high.
- FIG. 12A is a top view showing an example of an active element mounting circuit board in which the electromagnetic noise suppressing thin film (c) of the present invention is formed on a ground line, and is schematically shown in a circuit diagram.
- FIG. 12B is a side view of the electromagnetic noise suppressing thin film (c) of FIG. 12A.
- FIG. 13 is a diagram showing the radiation noise reduction effect of the electromagnetic noise suppression thin film of FIG. 12B.
- an electromagnetic noise suppressing thin film manufactured according to the present invention is formed on a part of a ground line 72 on a circuit board 73 on which an IC 71 is mounted as an active element. Then, the radiated electromagnetic noise generated when this circuit was operated was compared.
- C is an inactive circuit element 74 such as a capacitor.
- the radiated electromagnetic noise level observed when a circuit in which the electromagnetic noise suppressing thin film represented by the solid curve 77 is formed on a part of the circuit board is operated is
- the radiation noise was greatly attenuated compared to the radiated electromagnetic noise level in which the electromagnetic noise suppressing thin film according to the comparative example shown by the broken line curve 76 was not provided, and an effective electromagnetic noise reduction effect was obtained. I have.
- the electromagnetic noise suppressing thin film is provided on a circuit board on which an active element is mounted, for example, on a ground line.
- the electronic noise reduction effect can be obtained by directly providing a part of the electronic component including the data line, a part of the data line, the active element, or the electronic part having the active element where the high-frequency current flows, for example, a metal housing. It is.
- the electromagnetic noise suppressing thin film according to the embodiment of the present invention has excellent magnetic permeability characteristics at high frequencies, in particular, imaginary part magnetic permeability characteristics. It has an excellent noise suppression effect in waves and is extremely effective in suppressing high-frequency electromagnetic noise, which has recently become a problem.
- an electromagnetic noise suppressing thin film having a columnar structure capable of controlling the spin resonance phenomenon while increasing the electric resistance while suppressing superparamagnetism.
- the electromagnetic noise suppressing thin film according to the present invention can suppress a high-frequency current that becomes noise, and thus can be used for electronic devices and electric devices such as personal computers and portable terminals.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Dispersion Chemistry (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Magnetic Films (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Hard Magnetic Materials (AREA)
- Soft Magnetic Materials (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006510785A JPWO2005086184A1 (ja) | 2004-03-08 | 2005-03-08 | 電磁雑音抑制薄膜 |
EP05720263A EP1734542B1 (en) | 2004-03-08 | 2005-03-08 | Electromagnetic noise suppressing thin film |
DE602005011771T DE602005011771D1 (de) | 2004-03-08 | 2005-03-08 | Elektromagnetisches rauschen unterdrückender dünnfilm |
CN2005800075384A CN1930643B (zh) | 2004-03-08 | 2005-03-08 | 电磁噪声抑制薄膜 |
NO20064552A NO20064552L (no) | 2004-03-08 | 2006-10-06 | Elektromagnetisk stoyundertrykkende tynnfilm |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPPCT/JP2004/002944 | 2004-03-08 | ||
PCT/JP2004/002944 WO2005086556A1 (ja) | 2004-03-08 | 2004-03-08 | 電磁雑音吸収薄膜 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005086184A1 true WO2005086184A1 (ja) | 2005-09-15 |
Family
ID=34917845
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/002944 WO2005086556A1 (ja) | 2004-03-08 | 2004-03-08 | 電磁雑音吸収薄膜 |
PCT/JP2005/003991 WO2005086184A1 (ja) | 2004-03-08 | 2005-03-08 | 電磁雑音抑制薄膜 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/002944 WO2005086556A1 (ja) | 2004-03-08 | 2004-03-08 | 電磁雑音吸収薄膜 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1734542B1 (ja) |
JP (1) | JPWO2005086184A1 (ja) |
KR (1) | KR100845370B1 (ja) |
CN (1) | CN1930643B (ja) |
DE (1) | DE602005011771D1 (ja) |
NO (1) | NO20064552L (ja) |
WO (2) | WO2005086556A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009059932A (ja) * | 2007-08-31 | 2009-03-19 | Toshiba Corp | 高周波用磁性材料およびこれを用いたアンテナ装置 |
JP2009076652A (ja) * | 2007-09-20 | 2009-04-09 | Toshiba Corp | 高周波用磁性材料およびこれを用いたアンテナ装置。 |
JP2011170925A (ja) * | 2010-02-19 | 2011-09-01 | Toshiba Corp | 磁気記録ヘッド及びそれを用いた磁気記録再生装置 |
JP2019102709A (ja) * | 2017-12-05 | 2019-06-24 | Tdk株式会社 | 軟磁性金属薄膜および薄膜インダクタ |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150041321A (ko) * | 2013-10-08 | 2015-04-16 | 엘지이노텍 주식회사 | 자성시트 및 이를 포함하는 무선충전용 자성부재 |
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FI117224B (fi) * | 1994-01-20 | 2006-07-31 | Nec Tokin Corp | Sähkömagneettinen häiriönpoistokappale, ja sitä soveltavat elektroninen laite ja hybridimikropiirielementti |
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2004
- 2004-03-08 WO PCT/JP2004/002944 patent/WO2005086556A1/ja active Application Filing
-
2005
- 2005-03-08 JP JP2006510785A patent/JPWO2005086184A1/ja active Pending
- 2005-03-08 WO PCT/JP2005/003991 patent/WO2005086184A1/ja active Application Filing
- 2005-03-08 DE DE602005011771T patent/DE602005011771D1/de active Active
- 2005-03-08 KR KR1020067020783A patent/KR100845370B1/ko active IP Right Grant
- 2005-03-08 CN CN2005800075384A patent/CN1930643B/zh active Active
- 2005-03-08 EP EP05720263A patent/EP1734542B1/en active Active
-
2006
- 2006-10-06 NO NO20064552A patent/NO20064552L/no not_active Application Discontinuation
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WO2002058086A1 (en) * | 2001-01-18 | 2002-07-25 | Taiyo Yuden Co. Ltd. | Granular thin magnetic film and method of manufacturing the film, laminated magnetic film, magnetic part, and electronic device |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009059932A (ja) * | 2007-08-31 | 2009-03-19 | Toshiba Corp | 高周波用磁性材料およびこれを用いたアンテナ装置 |
JP2009076652A (ja) * | 2007-09-20 | 2009-04-09 | Toshiba Corp | 高周波用磁性材料およびこれを用いたアンテナ装置。 |
JP2011170925A (ja) * | 2010-02-19 | 2011-09-01 | Toshiba Corp | 磁気記録ヘッド及びそれを用いた磁気記録再生装置 |
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Also Published As
Publication number | Publication date |
---|---|
EP1734542B1 (en) | 2008-12-17 |
CN1930643A (zh) | 2007-03-14 |
EP1734542A4 (en) | 2007-08-01 |
KR20060120288A (ko) | 2006-11-24 |
DE602005011771D1 (de) | 2009-01-29 |
WO2005086556A1 (ja) | 2005-09-15 |
KR100845370B1 (ko) | 2008-07-09 |
EP1734542A1 (en) | 2006-12-20 |
JPWO2005086184A1 (ja) | 2008-01-24 |
NO20064552L (no) | 2006-10-06 |
CN1930643B (zh) | 2011-06-08 |
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