WO2005078809A1 - 半導体受光素子 - Google Patents
半導体受光素子 Download PDFInfo
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- WO2005078809A1 WO2005078809A1 PCT/JP2005/001702 JP2005001702W WO2005078809A1 WO 2005078809 A1 WO2005078809 A1 WO 2005078809A1 JP 2005001702 W JP2005001702 W JP 2005001702W WO 2005078809 A1 WO2005078809 A1 WO 2005078809A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 230000005684 electric field Effects 0.000 claims abstract description 163
- 238000005530 etching Methods 0.000 claims abstract description 87
- 239000010410 layer Substances 0.000 claims description 349
- 239000012535 impurity Substances 0.000 claims description 55
- 230000031700 light absorption Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 15
- 230000002040 relaxant effect Effects 0.000 claims description 6
- 241001538234 Nala Species 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 16
- 239000010408 film Substances 0.000 description 29
- 238000009792 diffusion process Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 240000002329 Inga feuillei Species 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Definitions
- the present invention relates to a semiconductor light receiving element, and more particularly to an avalanche photodiode (Avalanche).
- APD planar superlattice avalanche photodiode
- Such a conventional device has a high gain bandwidth product (Gain Band width product), low noise, and stable operation due to the effect of increasing the ionization rate ratio of the InAlAsZlnAlGaAs superlattice multiplication layer. It is characterized by a highly reliable element by adopting a structure in which only the InP planar pn junction is exposed on the surface.
- the layer structure includes a first conductivity type buffer layer, a first conductivity type light absorption layer, a first conductivity type electric field relaxation layer, a multiplication layer on a semiconductor substrate.
- An etching stop layer, a second conductivity type buffer layer, and a second conductivity type contact layer force are also formed.
- an impurity of the first conductivity type is diffused from the substrate surface to the peripheral portion of the isolation groove formed around the element, and the upper surface of the first conductive layer is diffused.
- the second conductivity type electrode is formed on the element central surface.
- the width of the isolation groove is not short-circuited by the impurity diffusion that is larger than the distance at which the impurity is diffused.
- the electrodes of the first and second conductivity types are separated from each other by an isolation groove formed by etching from the surface to the etching stop layer (after formation, a dielectric film is formed) and function as both electrodes of the diode To do.
- Patent Document 1 Japanese Patent Laid-Open No. 7-312442
- Non-Patent Document 1 Watanabe, et al. ITripley, Photo-Tas Technology Letters, Vol. 8, pp. 827-829, IEEE, Photonics Technol. Lett., Pp. 827-829, vol. 8, 199 6
- the planar type APD shown in the conventional example uses a structure characterized by using a superlattice structure as a multiplication layer and performing multiplication from a low electric field.
- a superlattice structure since the electric field applied to the multiplication layer is low, the electric field strength of the etching stopper layer cannot be exceeded! /, So the problem of dark current is a big problem! / Nah ...
- InP is often used as a material for the etching stopper layer.
- the reason is that the etching selectivity is high for materials such as InAlAs, InGaAs, and InAlGaAs.
- InP is lower than field strength strength nAlAs and InAlGaAs.
- an etching stopper is used to improve the GB characteristics by reducing the thickness of the force electron multiplier layer, which is a preferred material for the etching stopper (by increasing the electric field strength applied to the electron multiplier layer).
- a high electric field strength exceeding the electric field strength of the etching stopper layer is applied to the layer, and a very large dark current is generated in the etching stopper layer, degrading the multiplication characteristics of the device and increasing noise. Will do.
- the etching stopper layer may be InGa under lattice matching conditions with InP.
- AlAsSb As P (0 ⁇ x ⁇ l. 0, 0 ⁇ y ⁇ l. 0) and AlAsSb can also be used.
- the present invention includes at least a first conductivity type buffer layer, a light absorption layer, a first conductivity type electric field relaxation layer, a multiplication layer, an etching stopper layer, and a second conductivity type on a semiconductor substrate.
- a semiconductor light-receiving element comprising a buffer layer and a contact layer of a second conductivity type and having an electric field strength applied to an etching stopper layer lower than an electric field strength applied to a multiplication layer.
- the impurity of the light absorption layer may be the first conductivity type or the second conductivity type.
- the electric field strength of the etching stopper layer is lower than the electric field strength of the multiplication layer, and the electric field strength exerted on the etching stopper layer is lower than the electric field strength of the etching stopper layer or stronger than the multiplication layer.
- the electric field strength is preferably higher than the electric field strength of the etching stopper layer.
- the impurity of the first conductivity type or the second conductivity type is the second conductivity type
- the impurity concentration is more preferably IX 10 16 (cm ⁇ 3 ) or more.
- the single layer has a constant ratio of elements forming the multiplication layer.
- Multiplication layer strength nAlAs is more preferable.
- the thickness of the multiplication layer is more preferable. Is more preferably 0.3 m or less! /.
- the etching stopper layer is InP or In Ga As ⁇ (0 ⁇ 1.0,
- the layer thickness (dm (cm)) of the multiplication layer, the impurity concentration of the second conductivity type (Ndm (cm- 3 )), and the multiplication layer It is preferable to satisfy the relationship between the electric field magnitude A Em (kVZcm) and the force Ndm ⁇ k X eO XA EmZ (q X dm) that relaxes the electric field strength applied to.
- the layer thickness (dk (cm)) of the second conductivity type electric field relaxation layer, the second conductivity type impurity concentration (Ndk (cm- 3 )), and the multiplication layer It is preferable that the relationship between the electric field magnitude A Ek (kVZcm) and the force Ndk ⁇ k XeO XA EkZ (q X dk) for relaxing the electric field strength applied to the is satisfied.
- a multiplication layer having higher performance multiplication characteristics (a multiplication layer that is multiplied by a high electric field) can be used.
- the electric field applied to the adjacent etching stopper layer can be made smaller than the maximum electric field strength in the multiplication layer, and kept lower than the electric field strength of the etching stopper layer. It becomes possible.
- the maximum value of the multiplication electric field of the multiplication layer is 700 (kV / cm) and the electric field strength of the etching stopper layer is 600 (kV / cm), about 100 within the multiplication layer. If the electric field is reduced by (kV / cm 2) or more, it is possible to reduce the dark current in the etching stopper layer.
- an electric field having a magnitude relaxed by the electric field relaxation layer from the electric field strength applied to the multiplication layer is applied to the etching stopper layer, and the etching It becomes possible to use a material having a multiplication electric field strength larger than the electric field strength that the stopper layer can withstand.
- the maximum value of the multiplication electric field of the multiplication layer is 650 (kV / cm) and the electric field strength of the etching stopper layer is 550 (kV / cm)
- the second conductivity type relaxation layer has an electric field relaxation function of 100 (kVZcm) or more, the dark current generated in the etching stopper layer can be suppressed.
- An etching stopper layer structure with electric field strength of VZcm can be used.
- a 'high sensitivity and low noise avalanche' photodiode can be constructed.
- the present invention can also be applied to an APD having a conventional structure.
- the electric field strength applied to one layer of the etching stagger is alleviated, the dark current can be further reduced and the characteristics are improved. This has the effect of reducing noise.
- Second conductivity type buffer layer -8 Contact layer of second conductivity type
- the electric field strength applied to the multiplication layer is relaxed and the electric field applied to the etching stopper layer. This is solved by making the intensity lower than the electric field intensity applied to the multiplication layer. The present inventors have found that this can be realized by the following method.
- the first method is a method in which the multiplication layer adjacent to the etching stopper layer is doped with an impurity of the second conductivity type to have a function of relaxing the electric field.
- the multiplication layer has a structure doped with low-concentration impurities regardless of the conductivity type, and the second layer has a function of electric field relaxation between the multiplication layer and the etching stopper layer.
- an electric field relaxation layer doped with a conductive impurity is provided.
- the first method is a method of reducing the electric field strength inside the multiplication layer by increasing the multiplication strength and doping the multiplication layer with the second conductivity type impurity.
- the electric field strength exerted on the etching stopper layer can be reduced in a necessary amount or more than the multiplication electric field strength.
- ⁇ Em Reduced, electric field magnitude (kVZcm), q: elementary charge, dm: multiplication layer thickness (cm), Ndm: impurity concentration of multiplication layer (cm- 3 ), k: increase Dielectric constant of double layer and eO: dielectric constant of vacuum.
- the electric field reduction amount ⁇ Em from the maximum electric field is about 58 (kV / cm).
- the reduction amount of the electric field can be determined by setting the impurity concentration and thickness of the multiplication layer.
- an electric field relaxation layer is inserted between the multiplication layer having a high multiplication electric field strength and the etching stopper layer.
- the multiplication layer may be the first conductivity type impurity or the second conductivity type impurity as long as it has a very low impurity concentration.
- the electric field relaxation amount ⁇ Ek of the electric field relaxation layer can be expressed by the following equation (2).
- dk is the thickness of the electric field relaxation layer
- Ndk is the impurity concentration of the electric field relaxation layer (the conductivity type is the same conductivity type as the multiplication layer of the second conductivity type)
- q is the elementary charge
- k is The dielectric constant of the electric field relaxation layer.
- the thickness and concentration of the second conductivity type electric field relaxation layer are 0.1 m and 5 X 10 16 (cm ").
- the electric field relaxation amount ⁇ Ek is about 72 (kV / cm).
- FIG. 1 shows a schematic structural cross section of the present embodiment.
- Electric field relaxation layer 14 of the second conductivity type, multiplication layer 15 of the second conductivity type 15, etching stopper layer 16, buffer layer 1-7 of the second conductivity type and contact layer 1 of the second conductivity type 1 A layered structure consisting of 8 is formed.
- the separation groove between the electrodes is formed to the depth of the etching stopper layer with the surface force.
- a dielectric film 19 such as a silicon oxide film or a silicon nitride film serving as an insulating film is formed on the entire surface.
- the dielectric film may be other than a silicon oxide film or a silicon nitride film.
- Electrodes 111 and 112 are formed in electrode formation regions of the light absorption layer and the contact layer.
- the etching stopper layer 1-6 is replaced with the multiplication layer 1-5 and the second layer. It is necessary to provide a buffer layer between 1 and 6 of the conductive type.
- the etching stopper layer is
- an element constituting the multiplication layer 1-5 constituting the lower layer and a group V element are different. This is because the same element configuration has the same function as the multiplication layer 15 that constitutes the lower layer, and therefore has the same function as when the lower multiplication layer becomes thicker.
- the light absorption layer may be of the second conductivity type.
- FIG. 2 shows a schematic diagram of the electric field distribution applied to each layer.
- the impurity concentration of the multiplication layer is increased.
- the multiplication layer of the second conductivity type has a function of relaxing the electric field, the maximum electric field strength applied to the multiplication layer is relaxed, and applied to the etching stopper layer.
- the applied electric field strength is lower than the maximum electric field strength applied to the multiplication layer of the second conductivity type. For this reason, even if the maximum electric field strength of the multiplication layer is made larger than before, it is possible to obtain a multiplication characteristic with a high SZN ratio of the multiplication current without increasing the dark current.
- the maximum electric field of the multiplication layer is approximately 600-650 (kVZcm).
- the electric field strength is 600 (kVZcm).
- the electric field applied to the etching stopper layer becomes less than the withstand electric field strength.
- q l.6X10- 19 (C)
- e0 8.85 X 10- 14 (the dielectric constant of vacuum, cm display)
- dm the multiplication layer having a layer thickness (cm)
- Ndm multiplication impurities Concentration (cm- 3 )
- k 12.5 (dielectric constant of multiplication layer).
- the reduction amount of the electric field can be determined by setting the impurity concentration and thickness of the multiplication layer.
- the purpose of using a single thin film multiplication layer is to increase the GB product. If the film thickness does not exceed 0.3 m, the impurity concentration of the multiplication layer is 1. OX10 16 (cm- 3 ) It is more preferable that the above is 1.5 XIO 16 (cm- 3 ).
- the impurity concentration of lX10 16 (cm– 3 ) or more is sufficiently higher than the impurity concentration of 1 ⁇ 5 15 (cm– 3 ) in the case of undoped.
- the impurity concentration of the multiplication layer is 1.5. X10 16 (cm- 3 ) deeper, if the condition.
- the present invention makes it possible to use a thin film having a high GB product as a multiplication layer ( ⁇ 0. Multiplication layer having a high multiplication electric field strength such as a multiplication layer) in a planar structure. Since this is the main purpose, the thickness of the multiplication layer is often determined first.
- the layer thickness of the multiplication layer is first determined, and then the concentration corresponding to the required electric field reduction amount is calculated and used.
- the impurity concentration can be calculated from the following equation (4) with the addition of the above condition.
- a multiplication layer with a higher electric field than the conventional example is applied to the planar APD, and if the multiplication current is the same as the conventional one, a device operation with a higher GB product can be achieved. With a GB product equivalent to, it is possible to obtain a device with a lower multiplication current.
- FIG. 4 shows a schematic cross section of the present embodiment.
- a semiconductor substrate (regardless of conductivity type) 2-1 is in contact with the semiconductor substrate 2-1, in order, a first conductivity type buffer layer 2-2, a first conductivity type light absorption layer 2— 3, first conductivity type field relaxation layer 2-4, multiplication layer 2-5-1, first conductivity type field relaxation layer 2-5-2, etching stopper one layer 2-6, second layer A layer structure composed of the conductive type buffer layer 2-7 and the second conductive type contact layer 2-8 is formed.
- a separation groove between the electrodes is formed up to the depth of the etching stopper layer.
- a dielectric film 2-9 such as a silicon oxide film or a silicon nitride film to be an insulating film is formed on the entire surface.
- the dielectric film may be other than a silicon oxide film or a silicon nitride film.
- Electrodes 111 and 112 are formed in electrode formation regions of the light absorption layer and the contact layer.
- FIG. 5 shows a schematic diagram of the electric field distribution applied to each layer.
- an electric field relaxation layer of the second conductivity type is provided in order to moderate the electric field.
- the electric field applied to the multiplication layer of the second conductivity type has a function of relaxing by the electric field relaxation layer of the second conductivity type, and is applied to the multiplication layer.
- the electric field strength is relaxed, and the electric field strength applied to the etching stopper layer is lower than the electric field strength applied to the multiplication layer of the second conductivity type. Therefore, even if the maximum electric field strength of the multiplication layer is made larger than before, it is possible to obtain a multiplication characteristic with a high SZN ratio of the multiplication current without increasing the dark current.
- the maximum electric field of the multiplication layer is approximately 650-700 kVZcm.
- InP When InP is used as the etching stopper layer, its electric field strength is 600 (kVZcm). In this case, it is larger than 100 (kVZcm) in the electric field relaxation layer of the second conductivity type. If the electric field is relaxed, the electric field applied to the etching stopper layer becomes less than the electric field strength.
- the amount of electric field AEk that can be reduced by the multiplication layer is given by the following equation (6).
- the present invention can be applied to a semiconductor light receiving element having a conventional structure.
- the electric field strength applied to the etching stopper layer is reduced.
- Etching stopper Since the electric field strength applied to one layer is relaxed, the dark current is reduced compared to the conventional case, and the characteristics are improved (lower noise).
- isolation etching and dielectric passivation SiN dielectric layer 1-3-9
- n-type multiplication layer 1-3-5 InAlAs having a layer thickness of 0.3 m and an impurity concentration of 3 X 10 16 (cm " 3 ) was used.
- the etching stopper layer 1-3-6 is 0.1 m ⁇
- the ⁇ -type buffer layer 1-3-7 is 0.5 m thick
- the impurity concentration is 1 X 10 18 (cm- 3 )
- As the n-type contact layer 1-3-8 InGaAs with a layer thickness of 0.2 m and an impurity concentration of 5 ⁇ 10 18 (cm- 3 ) is used.
- an n-type light absorption layer may be used.
- This n-type multiplication layer 1-3-5 has a function of dropping a 130 (kVZcm) electric field, and even under operating conditions where the maximum value of the multiplication electric field is 650 (kV / cm).
- the electric field applied to the etching stopper layer 1-3-6 is 520 (kVZcm).
- the multiplication layer has a multiplication electric field higher than the electric field strength of the etching stopper layer 13-6 and a low dark current structure.
- Vb is a breakdown voltage
- the element reliability is estimated to have a lifetime of 1 million hours or more.
- a planar type APD is constructed by applying isolation etching and SiN dielectric passivation to the structure where n-type buffer layer 2-3-7 and n-type contact layer 2-3-8 are stacked.
- the layer thickness is 0.1 m. 1 x 10 17 (cm- 3 ) InAlAs, etching stopper layer 2-3-3, 0.1 m InP, n-type buffer layer 2-3-3-7, layer thickness 0 InAlAs of 5 m, concentration 1 X 10 18 (cm—), InGaAs with a layer thickness of 0.2 ⁇ m, concentration 5 X 10 18 (cm— 3 ) is used as the n-type contact layer 2-3-7.
- This n-type field relaxation layer has a function of dropping a 145 (kV / cm) electric field, and even in an operating condition where the maximum value of the multiplication electric field is 700 (kV / cm), The powerful electric field is 555 (kV / cm).
- the value at 0.9 Vb was less than 500 (nA) under the condition of temperature 0-85 (° C).
- Vb is a breakdown voltage
- the device reliability is estimated to be over 1 million hours.
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
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- Light Receiving Elements (AREA)
Abstract
Description
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005517930A JP4909593B2 (ja) | 2004-02-13 | 2005-02-04 | 半導体受光素子 |
US10/589,004 US7560751B2 (en) | 2004-02-13 | 2005-02-04 | Semiconductor photo-detecting element |
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JP2004036723 | 2004-02-13 | ||
JP2004-036723 | 2004-02-13 |
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WO2005078809A1 true WO2005078809A1 (ja) | 2005-08-25 |
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PCT/JP2005/001702 WO2005078809A1 (ja) | 2004-02-13 | 2005-02-04 | 半導体受光素子 |
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JP (1) | JP4909593B2 (ja) |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007250585A (ja) * | 2006-03-13 | 2007-09-27 | Nec Corp | 半導体光素子 |
WO2012029896A1 (ja) * | 2010-09-02 | 2012-03-08 | Nttエレクトロニクス株式会社 | アバランシ・フォトダイオード |
US9406830B1 (en) | 2015-03-23 | 2016-08-02 | Mitsubishi Electric Corporation | Semiconductor light-receiving device |
WO2021100088A1 (ja) * | 2019-11-18 | 2021-05-27 | 日本電信電話株式会社 | アバランシェフォトダイオード |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8022351B2 (en) * | 2008-02-14 | 2011-09-20 | California Institute Of Technology | Single photon detection with self-quenching multiplication |
JP5631668B2 (ja) * | 2010-09-02 | 2014-11-26 | Nttエレクトロニクス株式会社 | アバランシ・フォトダイオード |
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US6794631B2 (en) * | 2002-06-07 | 2004-09-21 | Corning Lasertron, Inc. | Three-terminal avalanche photodiode |
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2005
- 2005-02-04 US US10/589,004 patent/US7560751B2/en active Active
- 2005-02-04 JP JP2005517930A patent/JP4909593B2/ja not_active Expired - Fee Related
- 2005-02-04 WO PCT/JP2005/001702 patent/WO2005078809A1/ja active Application Filing
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JP2012054477A (ja) * | 2010-09-02 | 2012-03-15 | Ntt Electornics Corp | アバランシ・フォトダイオード |
US8729602B2 (en) | 2010-09-02 | 2014-05-20 | Ntt Electronics Corporation | Avalanche photodiode |
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WO2021100088A1 (ja) * | 2019-11-18 | 2021-05-27 | 日本電信電話株式会社 | アバランシェフォトダイオード |
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Also Published As
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US7560751B2 (en) | 2009-07-14 |
JPWO2005078809A1 (ja) | 2007-10-18 |
US20070090397A1 (en) | 2007-04-26 |
JP4909593B2 (ja) | 2012-04-04 |
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