JP2012054477A - アバランシ・フォトダイオード - Google Patents
アバランシ・フォトダイオード Download PDFInfo
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- JP2012054477A JP2012054477A JP2010197155A JP2010197155A JP2012054477A JP 2012054477 A JP2012054477 A JP 2012054477A JP 2010197155 A JP2010197155 A JP 2010197155A JP 2010197155 A JP2010197155 A JP 2010197155A JP 2012054477 A JP2012054477 A JP 2012054477A
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- 230000005684 electric field Effects 0.000 claims abstract description 71
- 230000031700 light absorption Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 238000010276 construction Methods 0.000 abstract 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 47
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000003334 potential effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】APD301は、半絶縁性基板1と、半絶縁性基板1面上に、p形電極層2、p形光吸収層3A、低不純物濃度の光吸収層3B、バンドギャップ傾斜層4、p形電界制御層5、なだれ増倍層6、n形電界制御層7A、及び低不純物濃度の電子走行層7Bの順で積層された第1積層構成からなる第1メサ101と、積層方向から見て、外周が第1メサ101の外周の内側にあり、第1メサ101の電子走行層7B側の表面上に、n形電極バッファ層8A、及びn形電極層8Bの順で積層された第2積層構成からなる第2のメサ102と、を備え、n形電界制御層7Aの総ドナー濃度がp形電界制御層5の総アクセプタ濃度より2×1011〜1×1012/cm2の範囲で低いことを特長とする。
【選択図】図1
Description
図1は、APD301を説明する素子の模式図である。図1(a)は上面図であり、図1(b)は断面図である。なお、本明細書では、半絶縁性基板1に対し、n電極9側を上側及び積層方向として説明する。
図5は、APD302を説明する素子の模式図(断面図)である。APD302と図1及び図2のAPD301との違いは、APD302がn形電極層8Bの代替としてn形電極層28Bを備えている点である。n形電極層28Bは、n形電極層8Bと形状が異なる。すなわち、積層方向から見て、n形電極層28Bの外周はn形電極バッファ層8Aの外周の内側にある。
実施形態1及び2において、InAlAsをなだれ増倍層、InGaAsを光吸収層とするAPD(301、302)の例を述べたが、半導体材料の種類を制限するものではない。APD(301、302)で説明した構造は、他の半導体材料の組み合わせによるAPD素子においても同様に適用することができる。
2、32:p形電極層
3A、33A:p形光吸収層
3B、33B:光吸収層
4、34:バンドギャップ傾斜層
5、35:p形電界制御層
6、36:なだれ増倍層
7A、37A:n形電界制御層
7B、37B:電子走行層
8A、38A:n形電極バッファ層
8B、28B、38B:n形電極層
9、39:n電極
10、40:p電極
12A、12B、22B:空乏領域
13:ホールが残留した部分
101:第1メサ
102:第2メサ
300、301、302:APD
Claims (3)
- 半絶縁性基板と、
前記半絶縁性基板面上に、p形電極層、p形光吸収層、低不純物濃度の光吸収層、バンドギャップ傾斜層、p形電界制御層、なだれ増倍層、n形電界制御層、及び低不純物濃度の電子走行層の順で積層された第1積層構成からなる第1メサと、
積層方向から見て、外周が前記第1メサの外周の内側にあり、前記第1メサの前記電子走行層側の表面上に、n形電極バッファ層、及びn形電極層の順で積層された第2積層構成からなる第2のメサと、
を備え、
前記n形電界制御層の総ドナー濃度が前記p形電界制御層の総アクセプタ濃度より2×1011〜1×1012/cm2の範囲で低いことを特長とするアバランシ・フォトダイオード。 - 前記n形電極バッファ層のドナー濃度が2×1016〜1×1017/cm3の範囲であることを特長とする請求項1に記載のアバランシ・フォトダイオード。
- 積層方向から見て、前記n形電極層の外周が前記n形電極バッファ層の外周の内側にあることを特長とする請求項1又は2に記載のアバランシ・フォトダイオード。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010197155A JP5327892B2 (ja) | 2010-09-02 | 2010-09-02 | アバランシ・フォトダイオード |
CN201180042210.1A CN103081129B (zh) | 2010-09-02 | 2011-09-01 | 雪崩光电二极管 |
US13/819,279 US8729602B2 (en) | 2010-09-02 | 2011-09-01 | Avalanche photodiode |
PCT/JP2011/069866 WO2012029896A1 (ja) | 2010-09-02 | 2011-09-01 | アバランシ・フォトダイオード |
EP11821911.2A EP2613365B1 (en) | 2010-09-02 | 2011-09-01 | Avalanche photodiode |
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JP2010197155A JP5327892B2 (ja) | 2010-09-02 | 2010-09-02 | アバランシ・フォトダイオード |
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JP2012054477A true JP2012054477A (ja) | 2012-03-15 |
JP5327892B2 JP5327892B2 (ja) | 2013-10-30 |
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US (1) | US8729602B2 (ja) |
EP (1) | EP2613365B1 (ja) |
JP (1) | JP5327892B2 (ja) |
CN (1) | CN103081129B (ja) |
WO (1) | WO2012029896A1 (ja) |
Families Citing this family (8)
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JP5631668B2 (ja) * | 2010-09-02 | 2014-11-26 | Nttエレクトロニクス株式会社 | アバランシ・フォトダイオード |
CN104282793A (zh) * | 2014-09-30 | 2015-01-14 | 中山大学 | 一种三台面p-π-n结构III族氮化物半导体雪崩光电探测器及其制备方法 |
US9478689B2 (en) * | 2014-12-10 | 2016-10-25 | Sifotonics Technologies Co., Ltd. | High-speed germanium on silicon avalanche photodiode |
JP6332096B2 (ja) | 2015-03-23 | 2018-05-30 | 三菱電機株式会社 | 半導体受光素子 |
US9466751B1 (en) * | 2016-03-04 | 2016-10-11 | National Central University | Avalanche photodiode having electric-field confinement by mesas |
US20190214514A1 (en) * | 2016-07-05 | 2019-07-11 | Lg Innotek Co., Ltd. | Semiconductor element |
US11056604B1 (en) * | 2020-02-18 | 2021-07-06 | National Central University | Photodiode of avalanche breakdown having mixed composite charge layer |
CN112531068A (zh) * | 2020-12-03 | 2021-03-19 | 北京邮电大学 | 一种集成微透镜结构的雪崩光电二极管 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005142455A (ja) * | 2003-11-10 | 2005-06-02 | Nippon Telegr & Teleph Corp <Ntt> | アバランシェフォトダイオード |
WO2005078809A1 (ja) * | 2004-02-13 | 2005-08-25 | Nec Corporation | 半導体受光素子 |
JP2007250585A (ja) * | 2006-03-13 | 2007-09-27 | Nec Corp | 半導体光素子 |
JP2010147177A (ja) * | 2008-12-17 | 2010-07-01 | Ntt Electornics Corp | アバランシ・フォトダイオード |
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JPH036871A (ja) * | 1989-06-02 | 1991-01-14 | Mitsubishi Electric Corp | 光検出素子 |
JPH04234116A (ja) | 1990-12-28 | 1992-08-21 | Sony Corp | ドライエッチング方法 |
US6359322B1 (en) * | 1999-04-15 | 2002-03-19 | Georgia Tech Research Corporation | Avalanche photodiode having edge breakdown suppression |
JP4234116B2 (ja) | 2005-06-27 | 2009-03-04 | Nttエレクトロニクス株式会社 | アバランシ・フォトダイオード |
JP2009252769A (ja) * | 2008-04-01 | 2009-10-29 | Nec Corp | 半導体受光素子 |
JP2010135360A (ja) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | アバランシェフォトダイオード |
EP2477234B1 (en) * | 2009-09-07 | 2021-06-23 | Sumitomo Electric Industries, Ltd. | Group iii-v compound semiconductor light receiving element, method for manufacturing group iii-v compound semiconductor light receiving element, light receiving element, and epitaxial wafer |
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- 2010-09-02 JP JP2010197155A patent/JP5327892B2/ja active Active
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2011
- 2011-09-01 EP EP11821911.2A patent/EP2613365B1/en active Active
- 2011-09-01 US US13/819,279 patent/US8729602B2/en active Active
- 2011-09-01 WO PCT/JP2011/069866 patent/WO2012029896A1/ja active Application Filing
- 2011-09-01 CN CN201180042210.1A patent/CN103081129B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005142455A (ja) * | 2003-11-10 | 2005-06-02 | Nippon Telegr & Teleph Corp <Ntt> | アバランシェフォトダイオード |
WO2005078809A1 (ja) * | 2004-02-13 | 2005-08-25 | Nec Corporation | 半導体受光素子 |
JP2007250585A (ja) * | 2006-03-13 | 2007-09-27 | Nec Corp | 半導体光素子 |
JP2010147177A (ja) * | 2008-12-17 | 2010-07-01 | Ntt Electornics Corp | アバランシ・フォトダイオード |
Also Published As
Publication number | Publication date |
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US20130154045A1 (en) | 2013-06-20 |
JP5327892B2 (ja) | 2013-10-30 |
CN103081129A (zh) | 2013-05-01 |
EP2613365A1 (en) | 2013-07-10 |
US8729602B2 (en) | 2014-05-20 |
WO2012029896A1 (ja) | 2012-03-08 |
EP2613365A4 (en) | 2018-02-14 |
EP2613365B1 (en) | 2019-06-26 |
CN103081129B (zh) | 2015-07-22 |
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