JP4191564B2 - アバランシ・フォトダイオード - Google Patents
アバランシ・フォトダイオード Download PDFInfo
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- JP4191564B2 JP4191564B2 JP2003318783A JP2003318783A JP4191564B2 JP 4191564 B2 JP4191564 B2 JP 4191564B2 JP 2003318783 A JP2003318783 A JP 2003318783A JP 2003318783 A JP2003318783 A JP 2003318783A JP 4191564 B2 JP4191564 B2 JP 4191564B2
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- 230000005684 electric field Effects 0.000 claims description 45
- 230000031700 light absorption Effects 0.000 claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 230000007423 decrease Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 13
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 230000004907 flux Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Description
12、23 第2のn型電極層
13 なだれ増倍層
14 電界制御層
14a 中性化領域
15 電界緩衝層
16 バンドギャップ傾斜層
17 光吸収層
18 p型電極層
19、20 金属電極
21 電気力線
22 第2の電極層
22a 第2の電極層のn型部分
51、61 n型電極層
52、66 なだれ増倍層
53、65 電界制御層
54、64 電界緩衝層
55、63 バンドギャップ傾斜層
56、62 光吸収層
57 p型電極層
58、59、68、69 金属電極
66a なだれ増倍領域
67 p型電極領域
Claims (3)
- 基板上に、n型電極層となだれ増倍層と電界制御層と電界緩衝層とバンドギャップ傾斜層と光吸収層とp型電極層とが順次積層された積層構造を有し、
前記n型電極層は、n型の第1の電極層と当該第1の電極層の主面の一部領域に設けられ、かつ、少なくとも一部にn型領域を有する第2の電極層とで構成されるとともに、前記光吸収層と前記第2の電極層のn型領域とは対向して設けられており、
当該第2の電極層のn型領域を画定する外周は、前記なだれ増倍層の下面の外周に対して内側に位置するように設定され、
前記バンドギャップ傾斜層を上面とし、かつ、前記なだれ増倍層を下面とする第1のメサ構造の上に、前記p型電極層を上面とし、かつ、前記光吸収層を下面とする第2のメサ構造が、前記第1のメサ構造の上面である前記バンドギャップ傾斜層の表面外周部に一定の幅を有するように配置されて設けられ、
前記第2のメサ構造の外周は、前記第2の電極層のn型領域を画定する外周の外側に位置するように配置されていることを特徴とするアバランシ・フォトダイオード。 - 前記第2の電極層のn型領域は、当該第2の電極層の外周側の所定領域を除く部分に設けられていることを特徴とする請求項1に記載のアバランシ・フォトダイオード。
- 前記第2の電極層は、上面が下面よりも狭いテーパー形状を有していることを特徴とする請求項1または2に記載のアバランシ・フォトダイオード。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003318783A JP4191564B2 (ja) | 2003-09-10 | 2003-09-10 | アバランシ・フォトダイオード |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003318783A JP4191564B2 (ja) | 2003-09-10 | 2003-09-10 | アバランシ・フォトダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005086109A JP2005086109A (ja) | 2005-03-31 |
JP4191564B2 true JP4191564B2 (ja) | 2008-12-03 |
Family
ID=34417968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003318783A Expired - Lifetime JP4191564B2 (ja) | 2003-09-10 | 2003-09-10 | アバランシ・フォトダイオード |
Country Status (1)
Country | Link |
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JP (1) | JP4191564B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4234116B2 (ja) | 2005-06-27 | 2009-03-04 | Nttエレクトロニクス株式会社 | アバランシ・フォトダイオード |
JP4728386B2 (ja) * | 2008-12-17 | 2011-07-20 | Nttエレクトロニクス株式会社 | アバランシ・フォトダイオード |
US12009450B2 (en) | 2019-11-18 | 2024-06-11 | Nippon Telegraph And Telephone Corporation | Optical receiving element and manufacturing method therefor |
CN110967684B (zh) * | 2019-11-21 | 2021-11-26 | 宁波飞芯电子科技有限公司 | 光电探测器的尺寸确定方法、设备及光电探测器 |
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2003
- 2003-09-10 JP JP2003318783A patent/JP4191564B2/ja not_active Expired - Lifetime
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Publication number | Publication date |
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JP2005086109A (ja) | 2005-03-31 |
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