US20160035928A1 - Photodiode - Google Patents
Photodiode Download PDFInfo
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- US20160035928A1 US20160035928A1 US14/884,630 US201514884630A US2016035928A1 US 20160035928 A1 US20160035928 A1 US 20160035928A1 US 201514884630 A US201514884630 A US 201514884630A US 2016035928 A1 US2016035928 A1 US 2016035928A1
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- semiconductor layer
- photodiode
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- 239000004065 semiconductor Substances 0.000 claims abstract description 207
- 239000012535 impurity Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 8
- 230000004044 response Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- -1 phosphor ion Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- Embodiments described herein are generally related to a photodiode.
- the lateral pin photodiode has a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer.
- the p-type semiconductor layer and the n-type semiconductor layer are disposed parallel to a surface of a semiconductor substrate.
- the i-type semiconductor layer is interposed between the p-type semiconductor layer and the n-type semiconductor layer.
- the lateral pin photodiode detects light to enter into the i-type semiconductor layer.
- the i-type semiconductor layer is a p-type semiconductor layer with a sufficiently low impurity concentration
- the n-type semiconductor layer and the i-type semiconductor layer form a pn-junction.
- a depletion layer of the pn-junction extends to the p-type semiconductor layer side rather than the n-type semiconductor layer side.
- the carrier which is generated inside the depletion layer flows as drift current.
- the carrier which is generated outside the depletion layer flows as diffusion current. As a result, a sufficient response speed of the lateral pin photodiode is not obtained.
- FIGS. 1A and 1B are views showing a photodiode according to an embodiment.
- FIG. 1A is the plan view of the photodiode.
- FIG. 1B is the cross-sectional view of the photodiode taken along a line A-A of FIG. 1A .
- FIG. 2 is a graph showing response characteristics of the photodiode according to the embodiment in comparison with a photodiode of a comparative example.
- FIGS. 3A and 3B are views showing the photodiode of the comparative example according to the embodiment.
- FIG. 3A is the plan view of the photodiode.
- FIG. 3B is the cross-sectional view of the photodiode taken along a line B-B of FIG. 3A .
- FIGS. 4A , 4 B, 5 A, 5 B and 6 are cross-sectional views showing steps of manufacturing the photodiode in order according to the embodiment.
- FIG. 7 is a cross-sectional view showing another photodiode according to the embodiment.
- FIG. 8 is a cross-sectional view showing another photodiode according to the embodiment.
- a photodiode includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, and a film.
- the first semiconductor layer has a first impurity concentration.
- the second semiconductor layer is provided in the first semiconductor layer, an one end of the second semiconductor layer being located at an upper surface of the first semiconductor layer, and has a second impurity concentration higher than the first impurity concentration.
- the third semiconductor layer is provided in the first semiconductor layer so as to surround the second semiconductor layer, an one end of the second semiconductor layer being located at the upper surface of the first semiconductor layer, and has a third impurity concentration higher than the first impurity concentration.
- the film is provided above the third semiconductor layer, and blocks light to enter into a neighborhood of the third semiconductor layer.
- FIGS. 1A and 1B are views showing the photodiode of the embodiment.
- FIG. 1A is the plan view of the photodiode.
- FIG. 1B is the cross-sectional view of the photodiode taken along a line A-A of FIG. 1A , viewed from the arrows.
- the photodiode of the embodiment is a lateral pin-photodiode having a p-type semiconductor layer, an i-type semiconductor layer and a n-type semiconductor layer.
- the p-type semiconductor layer and the n-type semiconductor layer are disposed parallel to a surface of a semiconductor substrate.
- the i-type semiconductor layer is interposed between the p-type semiconductor layer and the n-type semiconductor layer.
- the lateral pin photodiode detects light to enter into the i-type semiconductor layer.
- the lateral pin photodiode is simply referred to as the photodiode.
- a photodiode 10 of the embodiment is provided on a semiconductor substrate 11 .
- the semiconductor substrate 11 is a p-type (a first conductivity type) silicon substrate, for example.
- a p-type first semiconductor layer 12 is provided on the semiconductor substrate 11 .
- the first semiconductor layer 12 has a first impurity concentration of approximately 1E13cm ⁇ 3 and a thickness of approximately 10 ⁇ m, for example. Since the first impurity concentration is low enough, the first semiconductor layer 12 is considered to be an i-type semiconductor layer.
- An n-type (a second conductivity type) second semiconductor layer 13 is provided in the first semiconductor layer 12 , an one end of the second semiconductor layer 13 is located at an upper surface 12 a of the first semiconductor layer 12 .
- the second semiconductor layer 13 has a shape of column, for example.
- the second semiconductor layer 13 has a second impurity concentration of approximately 1E18 to 1E19 cm ⁇ 3 , and a thickness of approximately 3 to 4 ⁇ m, for example.
- the second impurity concentration is higher than the first impurity concentration.
- a p-type third semiconductor layer 14 is provided in the first semiconductor layer 12 so as to surround the second semiconductor layer 13 , an one end of the third semiconductor layer 14 is located at the upper surface 12 a of the first semiconductor layer 12 .
- the third semiconductor layer 14 has a third impurity concentration of approximately 1E18 to 1E19 cm ⁇ 3 , and a thickness of approximately 3 to 4 ⁇ m, for example.
- the third impurity concentration is higher than the first impurity concentration.
- the distance between the second semiconductor layers 13 is approximately 10 to 20 ⁇ m.
- a width of the third semiconductor layer 14 is approximately 1 to 2 ⁇ m.
- the third semiconductor layer 14 has a hexagonal shape in which the second semiconductor layer 13 is center, for example. Two or more second semiconductor layers 13 and two or more third semiconductor layers 14 are provided, and are arranged in a honeycomb shape.
- the lateral pin photodiode 10 is formed of the third semiconductor layer 14 , the first semiconductor layer 12 , and the second semiconductor layer 13 .
- the third semiconductor layer 14 is an anode of the photodiode 10
- the second semiconductor layer 13 is a cathode of the photodiode 10 .
- the insulating film 15 with translucency is provided on the first semiconductor layer 12 , the second semiconductor layer 13 , and the third semiconductor layer 14 .
- the insulating film 15 is a silicon dioxide film, for example.
- a film 16 is provided above the third semiconductor layer 14 .
- the film 16 is provided on the third semiconductor layer 14 through the insulating film 15 .
- the film 16 is a metallic film, for example.
- the edge of the film 16 is outside the edge of the third semiconductor layer 14 and inside an edge of a depletion layer.
- the depletion layer extends to the third semiconductor layer 14 side from a pn junction of the first semiconductor layer 12 and the second semiconductor layer 13 .
- a width of the depletion layer is dependent on the first impurity concentration of the first semiconductor layer 12 and the second impurity concentration of the second semiconductor layer 13 , and is approximately 3 to 5 ⁇ m.
- a width of the film 16 is larger than the width of the third semiconductor layer 14 .
- the film 16 prevents a portion of light 19 a from entering into the first semiconductor layer 12 when the edge of the film 16 is outside the edge of the depletion layer, a detection sensitivity of the photodiode 10 becomes lower. Accordingly, it is not preferable that the edge of the film 16 is outside the edge of the depletion layer.
- An electrode (a first electrode) 17 is provided on the insulating film 15 .
- the electrode 17 is electrically connected to the second semiconductor layer 13 through a via penetrating the insulating film 15 .
- the electrode 17 is a cathode electrode of the photodiode 10 .
- An electrode (a second electrode) not shown is electrically connected to the third semiconductor layer 14 .
- the second electrode is an anode electrode of the photodiode 10 .
- the light 19 which enters into the first semiconductor layer 12 is absorbed inside the first semiconductor layer 12 to generate carrier (electron-hole pair).
- the photodiode 10 outputs the generated carrier as photo current.
- the outputted photo current is taken into a signal processing circuit (not shown).
- the photo current sequentially reaches the third semiconductor layer 14 from the second semiconductor layer 13 by way of the electrode 17 , the signal processing circuit, and the electrode (the second electrode) which is not shown.
- Much light 19 a among the light 19 enters into the first semiconductor layer 12 . Meanwhile, the film 16 prevents the light 19 b from entering into a neighborhood 18 of the third semiconductor layer 14 .
- the light 19 a which enters into the first semiconductor layer 12 is absorbed inside the first semiconductor layer 12 to generate carrier.
- the generated carrier is accelerated by electric field in the depletion layer of the pn junction to flow as drift current with high speed.
- VD (kT/q) ln(Na ⁇ Nd/ni 2 ).
- K denotes Boltzmann constant
- T denotes absolute temperature
- q denotes electric charge
- NA denotes acceptor density
- ND denotes donor density
- ni intrinsic carrier density.
- FIG. 2 is a graph showing response characteristics of the photodiode 10 in comparison with a photodiode of a comparative example.
- FIGS. 3A and 3B are views showing the photodiode of the comparative example.
- FIG. 3A is the plan view of the photodiode.
- FIG. 3B is the cross-sectional view of the photodiode taken along a line B-B of FIG. 3A , viewed from the arrows.
- the photodiode of the comparative example will be described.
- a photodiode 30 of a comparative example has the same fundamental structure as the photodiode 10 shown in FIGS. 1A and 1B .
- the photodiode 30 is different from the photodiode 10 in that the photodiode 30 does not include the film 16 .
- the photodiode 30 does not include the film 16 , the light 19 b among the light 19 reaches a portion of the first semiconductor layer 12 which is the neighborhood 18 of the third semiconductor layer 14 .
- the light 19 b which reaches the first semiconductor layer 12 is absorbed inside the first semiconductor layer 12 to generate carrier.
- the neighborhood 18 of the third semiconductor 14 is separated from the edge of the depletion layer (transition region) of the pn junction formed by the first semiconductor layer 11 and the second semiconductor layer 12 , the neighborhood 18 of the third semiconductor 14 is a region which is not sufficiently depleted. Accordingly, the carrier which is generated in the neighborhood 18 of the third semiconductor 14 is not affected by the electric field to flow as diffusion current.
- a distance between the second semiconductor layer 13 and the third semiconductor layer 14 is approximately 5 to 10 ⁇ m, and is larger than the width of the depletion layer with approximately 3 to 5 ⁇ m.
- ⁇ denotes permittivity of semiconductor layer.
- a broken line 21 indicates light signal which enters into photodiodes 10 , 30
- solid line 22 indicates response characteristics of the photodiode 10
- a chain line 23 indicates response characteristics of the photodiode 30 .
- a rise time of the photodiode 10 is approximately same as a rise time of the photodiode 30 .
- a response of the photodiode 10 falls at time t 3 .
- a response of the photodiode 30 falls at time t 4 longer than time t 3 .
- a fall time of the photodiode 10 is shorter than a fall time of the photodiode 30 .
- the photodiode 30 of the comparative example does not include the film 16 , the carrier still remains in the neighborhood 18 of the third semiconductor layer 14 after cutting off the light 19 . Since the remaining carrier flows as diffusion current with slow speed, the rise time of the photodiode 30 becomes inevitably long.
- the photodiode 10 of the embodiment since the photodiode 10 of the embodiment includes the film 16 , the carrier which remains in the neighborhood 18 of the third semiconductor layer 14 after cutting off the light 19 does not exist. Accordingly, the diffusion current with slow speed does not flow. As a result, the film 16 enables the rise time of the photodiode 10 to shorten.
- FIGS. 4A , 4 B, 5 A, 5 B and 6 are cross-sectional views showing steps of manufacturing the photodiode 10 in order.
- the first semiconductor layer 12 is epitaxially grown on the silicon substrate 11 by vapor phase growth method, for example.
- dichlorosilane (SiH 2 Cl 2 ) gas is used as a process gas, for example.
- diborane (B 2 H 6 ) gas is used as a dopant gas, for example.
- a resist film 41 having an opening 41 a to expose a portion of the first semiconductor layer 12 in which the second semiconductor layer 13 is to be formed is formed on the first semiconductor layer 12 by photolithography method.
- the second semiconductor layer 13 is formed by implanting phosphor ion (P+) into the portion of the first semiconductor layer 12 using the resist film 41 as a mask.
- a resist film 42 having a honeycomb shaped opening 42 a to expose a portion of the first semiconductor layer 12 in which the third semiconductor layer 14 is to be formed is formed on the first semiconductor layer 12 by photolithography method.
- the third semiconductor layer 14 is formed by implanting boron ion (B+) into the portion of the first semiconductor layer 12 using the resist film 42 as a mask.
- a silicon oxide film as the insulating film 15 is formed on the first to third semiconductor layers 12 , 13 , 14 by chemical vapor deposition (CVD) method, for example.
- An opening 44 to expose a portion of the second semiconductor layer 13 is formed in the insulating film 15 by photolithography method.
- a metallic film 45 to fill the opening 44 and cover the insulating film 15 is formed by sputtering method, for example.
- the metallic film 45 is an aluminum film, for example.
- a resist film 46 having an opening 46 a to expose a portion of the metallic film 45 except a region in which the film 16 and the electrode 17 are to be formed is formed on the metallic film 45 by photolithography method.
- the metallic film 45 is removed using the resist film 46 as a mask by reactive ion etching (RIE) method, for example. Accordingly, the electrode 17 which is electrically connected to the second semiconductor layer 13 and the film 16 which blocks the light 19 b entering into the neighborhood 18 of the third semiconductor layer 14 are simultaneously formed.
- RIE reactive ion etching
- the photodiode 10 of the embodiment since the photodiode 10 of the embodiment has the film 16 to block the light 19 b which enters into the neighborhood 18 of the third semiconductor layer 14 , the carrier is not generated into the neighborhood 18 of the third semiconductor layer 14 . Accordingly, since the carrier which remains into the neighborhood 18 of the third semiconductor layer 14 when the light 19 is cut off does not exist, the fall time of the photodiode 10 can be shortened. As a result, a photodiode with a fast response speed is obtained.
- the third semiconductor layer 14 has the honeycomb shape.
- another shape such as a ring shape and a grid shape may be available as long as the third semiconductor layer 14 surrounds the second semiconductor layer 13 . Since a distance between the second semiconductor layer 13 and the third semiconductor layer 14 becomes constant when the third semiconductor layer 14 has the ring shape, a distance between the third semiconductor layer 14 and the edge of the depletion layer also becomes constant.
- An advantage that a margin of the film 16 is increased is obtained.
- the margin means an acceptable range of the position of the edge of the film 16 , for example.
- the reverse bias voltage may be applied to the photodiode 10 . Since the depletion layer further extends to the third semiconductor layer 14 side by applying reverse bias voltage to the photodiode 10 , an advantage that the margin of the film 16 is further increased is obtained.
- FIG. 7 is a cross-sectional view showing a photodiode 50 in which the first conductivity type is the n-type and the second conductivity type is the p-type.
- the photodiode 50 is the same as the photodiode 10 shown in FIGS. 1A and 1B except the conductivity type. The explanation of the photodiode 50 is omitted.
- FIG. 8 is a cross-sectional view showing a photodiode having a shield layer.
- a p-type fourth semiconductor layer (a shield layer) 61 is provided in the first semiconductor layer 12 , an one end of the fourth semiconductor layer 61 is located at the upper surface 12 a of the first semiconductor layer 12 , the third semiconductor layer 14 is provided in the first semiconductor layer 12 , an one end of the third semiconductor layer 14 is located at the other end of the fourth semiconductor layer 61 .
- a width of the fourth semiconductor layer 61 is larger than the width of the third semiconductor layer 14 .
- the fourth semiconductor layer 61 has a fourth impurity concentration of approximately 1E18 cm ⁇ 3 and a thickness of approximately 0.2 ⁇ m.
- the fourth impurity concentration is higher than the first impurity concentration.
- the width of the fourth semiconductor layer 61 is not especially limited unless the fourth semiconductor layer 61 is in contact with the second semiconductor layer 13 .
- the fourth semiconductor layer 61 and the substrate 11 are connected to ground (a common voltage line). Since the first semiconductor layer 12 is interposed between the fourth semiconductor layer 61 and the substrate 11 which are connected to the ground, the electromagnetic noise is prevented from entering into the first semiconductor layer 12 .
- the fourth semiconductor layer 61 functions as a shield layer to shield the electromagnetic noise.
- the fourth semiconductor layer 61 Since the fourth semiconductor layer 61 has the width within a range in which absorption of the light 19 is disregarded, the fourth semiconductor layer 61 does not affect a detection sensitivity of the photodiode 60 .
Abstract
According to one embodiment, a photodiode includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, and a film. The second semiconductor layer is provided in the first semiconductor layer. The third semiconductor layer is provided in the first semiconductor layer so as to surround the second semiconductor layer. Each of one ends of the second and third semiconductor layers is located at an upper surface of the first semiconductor layer. The first to third semiconductor layers include first to third impurity concentrations respectively. The second and third impurity concentrations are higher than the first impurity concentration. The film is provided above the third semiconductor layer, and blocks light to enter into a neighborhood of the third semiconductor layer.
Description
- This application is a Continuation of application Ser. No. 14/166,176, filed on Jan. 28, 2014, which is based upon and claims the benefit of priority from the prior Japanese Patent Application 2013-186017, filed on Sep. 9, 2013, the entire contents of which are incorporated herein by reference.
- Embodiments described herein are generally related to a photodiode.
- In the back ground art, lateral pin photodiodes are known. The lateral pin photodiode has a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer. The p-type semiconductor layer and the n-type semiconductor layer are disposed parallel to a surface of a semiconductor substrate. The i-type semiconductor layer is interposed between the p-type semiconductor layer and the n-type semiconductor layer.
- The lateral pin photodiode detects light to enter into the i-type semiconductor layer.
- When the i-type semiconductor layer is a p-type semiconductor layer with a sufficiently low impurity concentration, the n-type semiconductor layer and the i-type semiconductor layer form a pn-junction. A depletion layer of the pn-junction extends to the p-type semiconductor layer side rather than the n-type semiconductor layer side. When light enters into the i-type semiconductor layer, the light is absorbed inside the i-type semiconductor layer to generate carrier.
- The carrier which is generated inside the depletion layer flows as drift current. The carrier which is generated outside the depletion layer flows as diffusion current. As a result, a sufficient response speed of the lateral pin photodiode is not obtained.
-
FIGS. 1A and 1B are views showing a photodiode according to an embodiment.FIG. 1A is the plan view of the photodiode.FIG. 1B is the cross-sectional view of the photodiode taken along a line A-A ofFIG. 1A . -
FIG. 2 is a graph showing response characteristics of the photodiode according to the embodiment in comparison with a photodiode of a comparative example. -
FIGS. 3A and 3B are views showing the photodiode of the comparative example according to the embodiment.FIG. 3A is the plan view of the photodiode.FIG. 3B is the cross-sectional view of the photodiode taken along a line B-B ofFIG. 3A . -
FIGS. 4A , 4B, 5A, 5B and 6 are cross-sectional views showing steps of manufacturing the photodiode in order according to the embodiment. -
FIG. 7 is a cross-sectional view showing another photodiode according to the embodiment. -
FIG. 8 is a cross-sectional view showing another photodiode according to the embodiment. - According to one embodiment, a photodiode includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, and a film. The first semiconductor layer has a first impurity concentration. The second semiconductor layer is provided in the first semiconductor layer, an one end of the second semiconductor layer being located at an upper surface of the first semiconductor layer, and has a second impurity concentration higher than the first impurity concentration. The third semiconductor layer is provided in the first semiconductor layer so as to surround the second semiconductor layer, an one end of the second semiconductor layer being located at the upper surface of the first semiconductor layer, and has a third impurity concentration higher than the first impurity concentration. The film is provided above the third semiconductor layer, and blocks light to enter into a neighborhood of the third semiconductor layer.
- Embodiments will be described below with reference to the drawings. In the drawings, the same reference numerals show the same or similar portions. The same portions in the drawings are denoted by the same numerals and a detailed explanation of the same portions is appropriately omitted, and different portions will be described.
- A photodiode in accordance with an embodiment will be described with reference to
FIGS. 1A and 1B .FIGS. 1A and 1B are views showing the photodiode of the embodiment.FIG. 1A is the plan view of the photodiode.FIG. 1B is the cross-sectional view of the photodiode taken along a line A-A ofFIG. 1A , viewed from the arrows. - The photodiode of the embodiment is a lateral pin-photodiode having a p-type semiconductor layer, an i-type semiconductor layer and a n-type semiconductor layer. The p-type semiconductor layer and the n-type semiconductor layer are disposed parallel to a surface of a semiconductor substrate. The i-type semiconductor layer is interposed between the p-type semiconductor layer and the n-type semiconductor layer.
- The lateral pin photodiode detects light to enter into the i-type semiconductor layer. Hereinafter, the lateral pin photodiode is simply referred to as the photodiode.
- As shown in
FIGS. 1A and 1B , aphotodiode 10 of the embodiment is provided on asemiconductor substrate 11. Thesemiconductor substrate 11 is a p-type (a first conductivity type) silicon substrate, for example. A p-typefirst semiconductor layer 12 is provided on thesemiconductor substrate 11. Thefirst semiconductor layer 12 has a first impurity concentration of approximately 1E13cm−3 and a thickness of approximately 10 μm, for example. Since the first impurity concentration is low enough, thefirst semiconductor layer 12 is considered to be an i-type semiconductor layer. - An n-type (a second conductivity type)
second semiconductor layer 13 is provided in thefirst semiconductor layer 12, an one end of thesecond semiconductor layer 13 is located at anupper surface 12 a of thefirst semiconductor layer 12. Thesecond semiconductor layer 13 has a shape of column, for example. Thesecond semiconductor layer 13 has a second impurity concentration of approximately 1E18 to 1E19 cm−3, and a thickness of approximately 3 to 4 μm, for example. The second impurity concentration is higher than the first impurity concentration. - A p-type
third semiconductor layer 14 is provided in thefirst semiconductor layer 12 so as to surround thesecond semiconductor layer 13, an one end of thethird semiconductor layer 14 is located at theupper surface 12 a of thefirst semiconductor layer 12. Thethird semiconductor layer 14 has a third impurity concentration of approximately 1E18 to 1E19 cm−3, and a thickness of approximately 3 to 4 μm, for example. The third impurity concentration is higher than the first impurity concentration. - The distance between the second semiconductor layers 13 is approximately 10 to 20 μm. A width of the
third semiconductor layer 14 is approximately 1 to 2 μm. - The
third semiconductor layer 14 has a hexagonal shape in which thesecond semiconductor layer 13 is center, for example. Two or more second semiconductor layers 13 and two or more third semiconductor layers 14 are provided, and are arranged in a honeycomb shape. - The
lateral pin photodiode 10 is formed of thethird semiconductor layer 14, thefirst semiconductor layer 12, and thesecond semiconductor layer 13. Thethird semiconductor layer 14 is an anode of thephotodiode 10, and thesecond semiconductor layer 13 is a cathode of thephotodiode 10. - An insulating
film 15 with translucency is provided on thefirst semiconductor layer 12, thesecond semiconductor layer 13, and thethird semiconductor layer 14. The insulatingfilm 15 is a silicon dioxide film, for example. - A
film 16 is provided above thethird semiconductor layer 14. Thefilm 16 is provided on thethird semiconductor layer 14 through the insulatingfilm 15. Thefilm 16 is a metallic film, for example. - In plan view, the edge of the
film 16 is outside the edge of thethird semiconductor layer 14 and inside an edge of a depletion layer. The depletion layer extends to thethird semiconductor layer 14 side from a pn junction of thefirst semiconductor layer 12 and thesecond semiconductor layer 13. A width of the depletion layer is dependent on the first impurity concentration of thefirst semiconductor layer 12 and the second impurity concentration of thesecond semiconductor layer 13, and is approximately 3 to 5 μm. - More specifically, a width of the
film 16 is larger than the width of thethird semiconductor layer 14. - Since the
film 16 prevents a portion of light 19 a from entering into thefirst semiconductor layer 12 when the edge of thefilm 16 is outside the edge of the depletion layer, a detection sensitivity of thephotodiode 10 becomes lower. Accordingly, it is not preferable that the edge of thefilm 16 is outside the edge of the depletion layer. - An electrode (a first electrode) 17 is provided on the insulating
film 15. Theelectrode 17 is electrically connected to thesecond semiconductor layer 13 through a via penetrating the insulatingfilm 15. Theelectrode 17 is a cathode electrode of thephotodiode 10. An electrode (a second electrode) not shown is electrically connected to thethird semiconductor layer 14. The second electrode is an anode electrode of thephotodiode 10. - The light 19 which enters into the
first semiconductor layer 12 is absorbed inside thefirst semiconductor layer 12 to generate carrier (electron-hole pair). Thephotodiode 10 outputs the generated carrier as photo current. The outputted photo current is taken into a signal processing circuit (not shown). The photo current sequentially reaches thethird semiconductor layer 14 from thesecond semiconductor layer 13 by way of theelectrode 17, the signal processing circuit, and the electrode (the second electrode) which is not shown. - Much light 19 a among the light 19 enters into the
first semiconductor layer 12. Meanwhile, thefilm 16 prevents the light 19 b from entering into aneighborhood 18 of thethird semiconductor layer 14. - The light 19 a which enters into the
first semiconductor layer 12 is absorbed inside thefirst semiconductor layer 12 to generate carrier. The generated carrier is accelerated by electric field in the depletion layer of the pn junction to flow as drift current with high speed. - When a p-type semiconductor layer and an n-type semiconductor layer are joined, conduction electron and hole couple in the pn junction to form a depletion layer in which majority carrier is lacking. In the depletion layer, the n-type semiconductor layer side is charged in positive, and the p-type semiconductor layer side is charged in negative. Accordingly, electric field to pull back electron and hole to the n-type semiconductor layer and the p-type semiconductor layer respectively is generated, and voltage difference (diffusion potential) is generated at the both ends of the depletion layer. When carrier is injected into the depletion layer, the injected carrier serves as drift current which flows in accordance with the electric field. The higher the impurity concentration is, the larger the diffusion potential becomes.
- When the pn junction is a step junction, the diffusion potential is expressed as VD=(kT/q) ln(Na×Nd/ni2). K denotes Boltzmann constant, T denotes absolute temperature, q denotes electric charge, NA denotes acceptor density, ND denotes donor density, and ni denotes intrinsic carrier density.
-
FIG. 2 is a graph showing response characteristics of thephotodiode 10 in comparison with a photodiode of a comparative example.FIGS. 3A and 3B are views showing the photodiode of the comparative example.FIG. 3A is the plan view of the photodiode.FIG. 3B is the cross-sectional view of the photodiode taken along a line B-B ofFIG. 3A , viewed from the arrows. Firstly, the photodiode of the comparative example will be described. - As shown in
FIGS. 3A and 3B , aphotodiode 30 of a comparative example has the same fundamental structure as thephotodiode 10 shown inFIGS. 1A and 1B . Thephotodiode 30 is different from thephotodiode 10 in that thephotodiode 30 does not include thefilm 16. - Since the
photodiode 30 does not include thefilm 16, the light 19 b among the light 19 reaches a portion of thefirst semiconductor layer 12 which is theneighborhood 18 of thethird semiconductor layer 14. The light 19 b which reaches thefirst semiconductor layer 12 is absorbed inside thefirst semiconductor layer 12 to generate carrier. - Since the
neighborhood 18 of thethird semiconductor 14 is separated from the edge of the depletion layer (transition region) of the pn junction formed by thefirst semiconductor layer 11 and thesecond semiconductor layer 12, theneighborhood 18 of thethird semiconductor 14 is a region which is not sufficiently depleted. Accordingly, the carrier which is generated in theneighborhood 18 of thethird semiconductor 14 is not affected by the electric field to flow as diffusion current. - A distance between the
second semiconductor layer 13 and thethird semiconductor layer 14 is approximately 5 to 10 μm, and is larger than the width of the depletion layer with approximately 3 to 5 μm. When the pn junction is a step junction, the width of the depletion layer is expressed as W=√(2ε/q) (1/NA+1/ND)VD). ε denotes permittivity of semiconductor layer. - In
FIG. 2 , abroken line 21 indicates light signal which enters intophotodiodes solid line 22 indicates response characteristics of thephotodiode 10, and achain line 23 indicates response characteristics of thephotodiode 30. - As shown in
FIG. 2 , it is assumed that the light 19 with rectangular wave form is entered at time t1. A rise time of thephotodiode 10 is approximately same as a rise time of thephotodiode 30. - It is assumed that the light 19 with rectangular wave form is cut off at time t2. A response of the
photodiode 10 falls at time t3. A response of thephotodiode 30 falls at time t4 longer than time t3. A fall time of thephotodiode 10 is shorter than a fall time of thephotodiode 30. - Since the
photodiode 30 of the comparative example does not include thefilm 16, the carrier still remains in theneighborhood 18 of thethird semiconductor layer 14 after cutting off the light 19. Since the remaining carrier flows as diffusion current with slow speed, the rise time of thephotodiode 30 becomes inevitably long. - On the other hand, since the
photodiode 10 of the embodiment includes thefilm 16, the carrier which remains in theneighborhood 18 of thethird semiconductor layer 14 after cutting off the light 19 does not exist. Accordingly, the diffusion current with slow speed does not flow. As a result, thefilm 16 enables the rise time of thephotodiode 10 to shorten. - A method of manufacturing the
photodiode 10 will be explained.FIGS. 4A , 4B, 5A, 5B and 6 are cross-sectional views showing steps of manufacturing thephotodiode 10 in order. - As shown in
FIG. 4A , thefirst semiconductor layer 12 is epitaxially grown on thesilicon substrate 11 by vapor phase growth method, for example. dichlorosilane (SiH2Cl2) gas is used as a process gas, for example. diborane (B2H6) gas is used as a dopant gas, for example. - As shown in
FIG. 4B , a resistfilm 41 having an opening 41 a to expose a portion of thefirst semiconductor layer 12 in which thesecond semiconductor layer 13 is to be formed is formed on thefirst semiconductor layer 12 by photolithography method. Thesecond semiconductor layer 13 is formed by implanting phosphor ion (P+) into the portion of thefirst semiconductor layer 12 using the resistfilm 41 as a mask. - As shown in
FIG. 5A , a resistfilm 42 having a honeycomb shaped opening 42 a to expose a portion of thefirst semiconductor layer 12 in which thethird semiconductor layer 14 is to be formed is formed on thefirst semiconductor layer 12 by photolithography method. Thethird semiconductor layer 14 is formed by implanting boron ion (B+) into the portion of thefirst semiconductor layer 12 using the resistfilm 42 as a mask. - As shown in
FIG. 5B , a silicon oxide film as the insulatingfilm 15 is formed on the first to third semiconductor layers 12, 13, 14 by chemical vapor deposition (CVD) method, for example. Anopening 44 to expose a portion of thesecond semiconductor layer 13 is formed in the insulatingfilm 15 by photolithography method. - As shown in
FIG. 6 , ametallic film 45 to fill theopening 44 and cover the insulatingfilm 15 is formed by sputtering method, for example. Themetallic film 45 is an aluminum film, for example. A resistfilm 46 having an opening 46 a to expose a portion of themetallic film 45 except a region in which thefilm 16 and theelectrode 17 are to be formed is formed on themetallic film 45 by photolithography method. - The
metallic film 45 is removed using the resistfilm 46 as a mask by reactive ion etching (RIE) method, for example. Accordingly, theelectrode 17 which is electrically connected to thesecond semiconductor layer 13 and thefilm 16 which blocks the light 19 b entering into theneighborhood 18 of thethird semiconductor layer 14 are simultaneously formed. - As described above, since the
photodiode 10 of the embodiment has thefilm 16 to block the light 19 b which enters into theneighborhood 18 of thethird semiconductor layer 14, the carrier is not generated into theneighborhood 18 of thethird semiconductor layer 14. Accordingly, since the carrier which remains into theneighborhood 18 of thethird semiconductor layer 14 when the light 19 is cut off does not exist, the fall time of thephotodiode 10 can be shortened. As a result, a photodiode with a fast response speed is obtained. - The description has been made here as to the case where the
third semiconductor layer 14 has the honeycomb shape. However, another shape such as a ring shape and a grid shape may be available as long as thethird semiconductor layer 14 surrounds thesecond semiconductor layer 13. Since a distance between thesecond semiconductor layer 13 and thethird semiconductor layer 14 becomes constant when thethird semiconductor layer 14 has the ring shape, a distance between thethird semiconductor layer 14 and the edge of the depletion layer also becomes constant. An advantage that a margin of thefilm 16 is increased is obtained. The margin means an acceptable range of the position of the edge of thefilm 16, for example. - The description has been made as to the case where a reverse bias voltage is not applied to the
photodiode 10. However, the reverse bias voltage may be applied to thephotodiode 10. Since the depletion layer further extends to thethird semiconductor layer 14 side by applying reverse bias voltage to thephotodiode 10, an advantage that the margin of thefilm 16 is further increased is obtained. - The description has been made as to the case where the first conductivity type is p-type and the second conductivity type is n-type. However, the same advantage may be obtained when the first conductivity type is the n-type and the second conductivity type is the p-type.
FIG. 7 is a cross-sectional view showing aphotodiode 50 in which the first conductivity type is the n-type and the second conductivity type is the p-type. - The
photodiode 50 is the same as thephotodiode 10 shown inFIGS. 1A and 1B except the conductivity type. The explanation of thephotodiode 50 is omitted. - A shield layer to shield electromagnetic noise may be provided on the photodiode.
FIG. 8 is a cross-sectional view showing a photodiode having a shield layer. - As shown in
FIG. 8 , in aphotodiode 60, a p-type fourth semiconductor layer (a shield layer) 61 is provided in thefirst semiconductor layer 12, an one end of thefourth semiconductor layer 61 is located at theupper surface 12 a of thefirst semiconductor layer 12, thethird semiconductor layer 14 is provided in thefirst semiconductor layer 12, an one end of thethird semiconductor layer 14 is located at the other end of thefourth semiconductor layer 61. - A width of the
fourth semiconductor layer 61 is larger than the width of thethird semiconductor layer 14. Thefourth semiconductor layer 61 has a fourth impurity concentration of approximately 1E18 cm−3 and a thickness of approximately 0.2 μm. The fourth impurity concentration is higher than the first impurity concentration. The width of thefourth semiconductor layer 61 is not especially limited unless thefourth semiconductor layer 61 is in contact with thesecond semiconductor layer 13. - The
fourth semiconductor layer 61 and thesubstrate 11 are connected to ground (a common voltage line). Since thefirst semiconductor layer 12 is interposed between thefourth semiconductor layer 61 and thesubstrate 11 which are connected to the ground, the electromagnetic noise is prevented from entering into thefirst semiconductor layer 12. Thefourth semiconductor layer 61 functions as a shield layer to shield the electromagnetic noise. - Since the
fourth semiconductor layer 61 has the width within a range in which absorption of the light 19 is disregarded, thefourth semiconductor layer 61 does not affect a detection sensitivity of thephotodiode 60. - While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
Claims (11)
1. A photodiode, comprising:
a first semiconductor layer of a first conductivity type having a first impurity concentration;
a second semiconductor layer of a second conductivity type provided in the first semiconductor layer, and having a second impurity concentration higher than the first impurity concentration;
a third semiconductor layer of the first conductivity type provided in the first semiconductor layer so as to surround the second semiconductor layer, and having a third impurity concentration higher than the first impurity concentration; and
a film provided above the third semiconductor layer, and blocking light to enter into a neighborhood of the third semiconductor layer.
2. The photodiode according to claim 1 , wherein
a width of the film is larger than a width of the third semiconductor layer, and an edge of the film is in the third semiconductor layer side from an edge of a depletion layer, the depletion layer extending to the third semiconductor layer side from a pn junction of the first and second semiconductor layers.
3. The photodiode according to claim 1 , wherein
the third semiconductor layer with a polygon shape or a circle shape surrounds the second semiconductor layer in a shape of polygon or circle.
4. The photodiode according to claim 1 , further comprising a fourth semiconductor layer of the first conductivity type provided in the first semiconductor layer, one end of the fourth semiconductor layer being located at the upper surface of the first semiconductor layer, and having a width larger than a width of the third semiconductor layer and a fourth impurity concentration higher than the first impurity concentration, wherein
the end of the third semiconductor layer is located at a lower surface of the fourth semiconductor layer.
5. The photodiode according to claim 4 , wherein
the fourth semiconductor layer is electrically connected to a common voltage line.
6. The photodiode according to claim 1 , wherein
the first semiconductor layer is provided on a semiconductor substrate of the first conductivity type.
7. The photodiode according to claim 1 , further comprising:
a first electrode electrically connected to the second semiconductor layer; and
a second electrode electrically connected to the third semiconductor layer.
8. The photodiode according to claim 1 , wherein
the third semiconductor layer is substantially equal to the first semiconductor layer in thickness.
9. The photodiode according to claim 6 , wherein
the semiconductor substrate is electrically connected to a common voltage line.
10. The photodiode according to claim 1 , further comprising an insulating film with translucency provided on at least the first and third semiconductor layers, wherein the film is provided on the insulating film.
11. The photodiode according to claim 1 , wherein
the film surrounds the second semiconductor layer in plan view.
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US14/884,630 US20160035928A1 (en) | 2013-09-09 | 2015-10-15 | Photodiode |
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JP2013-186017 | 2013-09-09 | ||
JP2013186017A JP2015053415A (en) | 2013-09-09 | 2013-09-09 | Photodiode |
US14/166,176 US9190550B2 (en) | 2013-09-09 | 2014-01-28 | Photodiode |
US14/884,630 US20160035928A1 (en) | 2013-09-09 | 2015-10-15 | Photodiode |
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US14/166,176 Continuation US9190550B2 (en) | 2013-09-09 | 2014-01-28 | Photodiode |
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US14/166,176 Expired - Fee Related US9190550B2 (en) | 2013-09-09 | 2014-01-28 | Photodiode |
US14/884,630 Abandoned US20160035928A1 (en) | 2013-09-09 | 2015-10-15 | Photodiode |
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JP2015053415A (en) * | 2013-09-09 | 2015-03-19 | 株式会社東芝 | Photodiode |
CN109478578B (en) * | 2016-07-27 | 2022-01-25 | 浜松光子学株式会社 | Optical detection device |
CN112071923B (en) * | 2020-09-17 | 2022-12-09 | 京东方科技集团股份有限公司 | Imaging system, photodetector, and photodiode |
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JPS55140275A (en) * | 1979-04-18 | 1980-11-01 | Fujitsu Ltd | Semiconductor photodetector |
JPS59107570A (en) * | 1982-12-13 | 1984-06-21 | Fuji Photo Film Co Ltd | Semiconductor image pick-up device |
JPS622673A (en) * | 1985-06-28 | 1987-01-08 | Mitsubishi Electric Corp | Semiconductor light receiving device |
JPH06140659A (en) * | 1992-10-29 | 1994-05-20 | Matsushita Electron Corp | Optical semiconductor device |
JPH11191633A (en) * | 1997-10-09 | 1999-07-13 | Nippon Telegr & Teleph Corp <Ntt> | Pin-type semiconductor light receiving element and semiconductor light receiving circuit |
JP2004260227A (en) * | 2004-06-18 | 2004-09-16 | Sanyo Electric Co Ltd | Light receiving element and light receiving device |
JP2006269720A (en) * | 2005-03-24 | 2006-10-05 | Toshiba Corp | Semiconductor device and its fabrication process |
JP4658732B2 (en) * | 2005-08-09 | 2011-03-23 | ローム株式会社 | Photodiode and phototransistor |
JP2007149842A (en) * | 2005-11-25 | 2007-06-14 | Sanyo Electric Co Ltd | Semiconductor device |
JP2007329323A (en) * | 2006-06-08 | 2007-12-20 | Sanyo Electric Co Ltd | Semiconductor device, and its manufacturing method |
JP5049036B2 (en) * | 2007-03-28 | 2012-10-17 | オンセミコンダクター・トレーディング・リミテッド | Semiconductor device |
JP4770857B2 (en) | 2008-03-27 | 2011-09-14 | 日本テキサス・インスツルメンツ株式会社 | Semiconductor device |
GB2459647A (en) | 2008-04-28 | 2009-11-04 | Sharp Kk | Photosensitive structure with a light shading layer |
JP5553707B2 (en) | 2009-08-21 | 2014-07-16 | 株式会社半導体エネルギー研究所 | Photodetector |
JP6028233B2 (en) | 2011-05-27 | 2016-11-16 | ソニーセミコンダクタソリューションズ株式会社 | Photoelectric conversion element and photoelectric conversion device |
JP5758349B2 (en) | 2012-02-15 | 2015-08-05 | 日本電信電話株式会社 | Document categorizing apparatus, method and program thereof |
JP2015053415A (en) * | 2013-09-09 | 2015-03-19 | 株式会社東芝 | Photodiode |
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2013
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- 2014-01-28 US US14/166,176 patent/US9190550B2/en not_active Expired - Fee Related
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