WO2004009879A1 - Plating device - Google Patents

Abstract

A plating device has a plating vessel (40) for receiving plating liquid (10), an anode (56) installed so as to be immersed in the plating liquid (10) in the plating vessel (40), an adjustment plate (60) provided between the anode (56) and a substrate (W) that is provided so as to be opposed to the anode (56), and a plating power source (24) for performing plating by passing electricity between the anode (56) and the substrate (W). The adjustment plate (60) is provided so as to separate the plating liquid (10) received in the plating vessel (40) into the anode side and the side of an object to be plated. A perforation group (68) formed of a large number of through-perforations (66) is provided in the plate.

Description

 Description Plating equipment Technical field

 The present invention relates to a plating apparatus for plating a surface of a substrate such as a substrate, particularly a fine wiring groove or hole, a via hole, a through hole, a resist opening provided on a surface of a semiconductor wafer or the like. The present invention relates to a plating device used for forming a plating film on a portion or forming a bump (protruding electrode) on a surface of a semiconductor wafer to be electrically connected to a package electrode or the like. Background art

 For example, in TAB (Tape Automated Bonding) or FC (Flip Chip), gold, copper, solder, or lead-free solder or nickel is applied to a predetermined location (electrode) on the surface of a semiconductor chip on which wiring is formed. It is widely used to form protruding connection electrodes (bumps) by laminating them in multiple layers, and to electrically connect to the package electrodes and TAB electrodes via these bumps. There are various methods for forming the bumps, such as an electroplating method, a vapor deposition method, a printing method, and a ball bump method, but with the increase in the number of IZOs and the finer pitch of semiconductor chips, miniaturization is possible. The electroplating method, whose performance is relatively stable, has been increasingly used.

 According to the electroplating method, a high-purity metal film (plating film) can be easily obtained, and not only is the deposition rate of the metal film relatively high, but also the thickness of the metal film is relatively easily controlled. It can be carried out.

FIG. 37 shows an example of a conventional plating apparatus employing a so-called face-down method. The plating apparatus includes an open plating tank 12 for holding a plating solution 10 therein, and an upper and lower side for detachably holding a substrate W with its surface (covered surface) facing down (face down). It has a movable substrate holder 14. Plating tank 1 2 An anode 16 is disposed horizontally at the bottom, an overflow tank 18 is provided around the top, and a plating solution supply nozzle 20 is connected to the bottom of the plating tank 12.

 As a result, the substrate W held horizontally by the substrate holder 14 is placed at a position to close the opening at the upper end of the plating tank 12, and in this state, the plating solution is supplied from the plating solution supply nozzle 20 to the inside of the plating tank 12. The plating liquid 10 is supplied, and the plating liquid 10 overflows from the top of the plating tank 12 so that the plating liquid 10 comes into contact with the surface of the substrate W held by the substrate holder 14. At the same time, the anode 16 is connected to the anode of the power supply 24 via the conductor 22a, and the substrate W is connected to the cathode of the power supply 24 via the conductor 22b. Then, due to the potential difference between the substrate W and the anode 16, metal ions in the plating solution 10 receive electrons from the surface of the substrate W, and the metal is deposited on the surface of the substrate W to form a metal film.

 According to this plating apparatus, the size of the anode 16, the distance between the anode 16 and the substrate W and the potential difference, the supply speed of the plating solution 10 supplied from the plating solution supply nozzle 2, and the like are adjusted. By doing so, the uniformity of the thickness of the metal film formed on the surface of the substrate W can be adjusted to some extent.

 FIG. 38 shows an example of a conventional plating apparatus employing a so-called dip method. This plating apparatus is composed of a plating tank 12a for holding the plating solution inside, and a substrate W that is sealed in a water-tight manner at its peripheral edge to expose the surface (covered surface) and to be detachably held. It has a flexible substrate holder 14a. Inside the plating tank 12, the anode 16 a is held vertically by the anode holder 26, and the substrate W held by the substrate holder 14 a is arranged at a position facing the anode 16 a. At this time, an adjustment plate (regulation plate) 28 made of a dielectric material having a central hole 28a is arranged between the anode 16a and the substrate W.

As a result, the anode 16, the substrate W and the adjustment plate 28 are immersed in the plating solution in the plating tank 12 a, and at the same time, the anode 16 a is plated through the conductor 22 a. Attach the substrate W to the anode of the power supply 4 and the cathode of the power supply 2 4 By the connection, the metal is deposited on the surface of the substrate W to form a metal film in the same manner as described above.

 According to this plating apparatus, an adjustment plate 28 having a central hole 28a is arranged between the anode 16a and the substrate W arranged at a position facing the anode 16a. The thickness distribution of the metal film formed on the surface of the substrate W can be adjusted to some extent by adjusting the potential distribution in the plating tank 12 a with the plate 28.

 FIG. 39 shows another example of a conventional plating apparatus employing a so-called dip method. The difference of this plating device from that shown in Fig. 38 is that a ring-shaped pseudo cathode (pseudo electrode) 30 is provided without an adjustment plate, and the pseudo cathode 30 is arranged around the substrate W. In this state, the substrate W is held in the substrate holder 14a, and further, during the plating process, the pseudo cathode 30 is connected to the cathode of the power supply 24 via the conductor 22c. ^^ There are.

 According to this plating apparatus, the uniformity of the thickness of the metal film formed on the surface of the substrate W can be improved by adjusting the potential of the pseudo cathode 30.

 On the other hand, for example, when a metal film (plating film) for wiring or bumps is formed on the surface of a semiconductor substrate (ゥ uha), the uniformity of the surface shape and thickness of the metal film formed over the entire surface of the substrate is reduced. Is required. In recent years, high-density mounting technologies such as SOC and WL-CSP have increasingly required high-precision uniformity. However, these conventional plating equipment responded to high-precision uniformity. It was very difficult to form a metal film.

In other words, when plating is performed on the substrate using the plating apparatus shown in Fig. 37, a metal film strongly affected by the flow of the plating solution is formed, and if the flow of the plating solution is fast, as shown in Fig. 4 OA However, the metal film P tends to be thicker in the central part of the substrate W than in the peripheral part where the supply of metal ions is sufficient. To prevent this, if the flow of the plating solution is made very weak, As shown in FIG. 40B, the peripheral portion of the substrate W tends to have a larger thickness of the metal film P than the central portion. When plating is performed on the substrate using the plating apparatus shown in Fig. 38, the potential distribution is improved by an adjustment plate with a central hole in the center, Although the uniformity of the film thickness distribution of the metal film over the entire surface can be improved to some extent, as shown in FIG. 40C, the film thickness of the metal film P becomes thicker and wavy at the central portion and the peripheral portion of the substrate W. There is a tendency that a metal film P having an appropriate film thickness distribution is formed. Furthermore, when plating is performed with the plating apparatus shown in Fig. 39, not only is it difficult to adjust the voltage of the pseudo electrode (pseudo cathode), but it is also necessary to remove the metal film attached to the surface of the pseudo electrode. This operation becomes quite complicated.

 Generally, in a conventional plating apparatus, the surface potential distribution formed on the substrate surface tends to increase the film thickness at the periphery of the substrate, which is the power receiving portion, and the film pressure distribution on the substrate surface tends to be U-shaped (see FIG. 4). However, this is one of the major factors that impair the film thickness uniformity. In order to suppress this phenomenon, adjustment plates are used to adjust the supply of metal ions to the substrate surface, that is, to adjust the flow of the plating solution, and to control and adjust the potential distribution on the substrate surface and the electric field in the plating tank. Or a method using a pseudo electrode.

 Adjustment of the plating solution flow and adjustment by the adjustment plate is performed by collecting metal ions and electric fields at the center of the substrate and raising the plating film at the center of the substrate, thereby forming the film thickness of the plating film over the entire surface of the substrate. This method adjusts the distribution to a W-shape to minimize film thickness fluctuations from the average film thickness (see Fig. 40C). Therefore, the adjustment of the plating solution flow and the position of the adjustment plate-the selection of the center hole size and the fine adjustment have a very important effect on the film thickness uniformity, and the film thickness uniformity is adjusted (tuned). It depends very much on the condition.

On the other hand, in the method using a pseudo electrode, the potential distribution only on the substrate surface is originally spread to the area including the pseudo electrode on the outer periphery of the substrate, and the rise in the thickness of the power receiving portion is brought close to the pseudo electrode to make the potential distribution extremely uniform on the substrate surface. The film thickness is obtained. As a method equivalent to the method using the pseudo electrode, there is a method in which a pattern near the periphery of the substrate is used as a "disposal chip" to serve as a pseudo electrode. In the method using the pseudo electrode, the voltage adjustment affects the film thickness uniformity, and the operation becomes complicated because it is necessary to periodically remove the metal film (plating film) attached to the pseudo electrode. Also, if the pattern near the peripheral edge in the substrate is used as a dummy electrode so as to serve as a pseudo electrode, the number of effective chips per substrate decreases, which leads to a decrease in productivity. The above methods of deviation and deviation also result in adjusting the film thickness distribution to obtain a uniform film thickness distribution. Therefore, by positively controlling and adjusting the electric field in the plating tank formed between the anode and the plating object, which is a power source, the potential distribution on the surface of the plating object is controlled and improved. Therefore, the present invention does not cancel and improve the film thickness distribution of the plating film, which tends to be essentially U-shaped. Disclosure of the invention

 The present invention has been made in view of the above circumstances, and has a relatively simple device configuration, and does not require complicated operation methods and settings, and is more uniform over the entire covering body. An object is to provide a plating apparatus capable of forming a metal film (plating film) having a thickness.

 In order to achieve the above object, a plating apparatus of the present invention comprises: a plating tank for holding a plating solution; an anode immersed in the plating solution in the plating tank; and an anode and the anode. An adjusting plate provided between the cladding bodies arranged to face each other, and a plating power supply for energizing and plating between the anode and the cladding body; Is provided so as to block the plating liquid held in the plating tank between the anode side and the covering body side, and is provided with a through-hole group including a large number of through-holes therein. And

 As a result, the electric field leaks through a large number of through holes provided inside the adjusting plate installed in the plating tank, and the leaked electric field is spread evenly, so that the electric potential distribution over the entire surface of the covering body is reduced. By making it more uniform, the in-plane uniformity of the metal film formed on the covering body can be further improved. In addition, by suppressing the plating solution from passing through a large number of through-holes provided inside the adjustment plate installed in the plating tank, the plating solution is affected by the flow of the plating solution. Nonuniformity in the thickness of the metal film formed on the substrate can be prevented.

According to a preferred aspect of the present invention, the through-hole group includes a plurality of elongated holes that extend linearly or arcuately in one direction in a slit shape. In this way, By making the holes into slit-shaped long holes, it is possible to promote the leakage of the electric field while suppressing the flow of the plating solution in the long holes. The width of the long hole is, for example, 0.5 to 20 mm, preferably about 1 to 15 mm, and the length is determined by the shape of the covering body.

 According to a preferred aspect of the present invention, the through-hole group includes a plurality of cross holes extending in a cross shape in the vertical and horizontal directions.

 According to a preferred aspect of the present invention, the through-hole group is characterized by being composed of an arbitrary combination of a plurality of pores, a plurality of holes having different diameters, or a slit-shaped elongated hole. Thus, productivity can be improved by forming a through-hole group with a combination of a plurality of pores or a plurality of holes having different diameters. In this case, the diameter of the pores and further the small holes (peripheral holes) is, for example, 1 to 2 Omm, preferably about 2 to 10 mm, and the diameter of the large holes (center hole) is, for example, It is 50 to 300111111, preferably about 30 to 10 Omm.

 It is preferable that the through-hole group is formed in a region substantially similar to the plated body over substantially the entire region of the adjustment plate facing the adhered body. By forming the through-hole group in this manner, a metal film having good film thickness uniformity in all directions of the covering body can be formed.

 It is preferable that a stirring mechanism is provided between the to-be-coated body and the adjusting plate to stir the holding liquid held in the toning tank. Thus, by stirring the plating solution between the adherend and the adjusting plate by the agitating mechanism during the plating process, a sufficient amount of ion is supplied to the adherend uniformly and a more uniform A metal film having a thickness can be formed more quickly.

The stirring mechanism is preferably a paddle-type stirring mechanism having a paddle that reciprocates in parallel with the covering body. As a result, during the plating process, the plating solution is agitated with a paddle that reciprocates in parallel with the object to be covered, so that sufficient force is applied to the plating solution, such as force S, which prevents the flow of the plating solution from becoming directional. It can be uniformly supplied to the attached body. According to a preferred aspect of the present invention, the anode and the adjustment plate are arranged in a vertical direction. It is characterized by being installed in. As a result, an installation device having a small installation area and excellent maintainability can be provided.

 Another plating apparatus of the present invention includes a plating tank for holding a plating solution, an anode installed by being immersed in a plating solution in the plating tank, and disposed so as to face the anode and the anode. An adjusting plate installed between the anode and the body to be plated; and a plating power source for performing plating by energizing between the anode and the body to be adhered. The plating solution is installed so as to block the plating solution held therein between the anode side and the covering body side, and is provided with a plating solution flow path through which the plating solution flows while uniformly passing the electric field. The mounting device is characterized in that:

 In this way, by making the electric field formed between the anode and the adherend in the plating tank pass uniformly along the plating liquid flow path without leaking to the outside, distortion and deviation of the electric field can be reduced. By adjusting and correcting, the potential distribution over the entire surface of the covering body can be made more uniform, and the in-plane uniformity of the metal film formed on the covering body can be further improved.

 The length of the plating solution flow path is appropriately set depending on the shape of the plating tank, the distance between the anode and the covering object, etc., but is generally 10 to 9 Omm, preferably 20 to 7 Omm. It is set to 5 mm, more preferably 30 to 60 mm.

 Preferably, the plating liquid flow path is formed on the inner peripheral surface of a cylindrical body or a rectangular block. Thereby, the structure can be simplified.

 It is preferable that a plurality of through-holes having a size to prevent electric field leakage are provided in the peripheral wall of the cylindrical body. This prevents the electric field from leaking and allows the plating solution to flow through the through-holes formed in the peripheral wall of the cylindrical body, thereby causing a bias in the concentration of the plating solution inside and outside the cylindrical body. Can be prevented. Examples of the shape of the through hole include a long hole of a pore-slit shape, a cross hole extending vertically and horizontally, and a combination thereof.

According to a preferred aspect of the present invention, at least one of the space between the clad body and the adjustment plate or between the force sword and the adjustment plate is held by the plating tank. It is characterized in that it has a stirring mechanism for stirring the pouring liquid. As a result, the plating solution is agitated during the plating process so that the concentration of the plating solution containing various metal ions and various additives in the plating bath becomes uniform in the plating bath, and the plating solution has a uniform concentration. By supplying the plating solution, a metal film having a more uniform film thickness can be formed more quickly. The stirring mechanism is preferably a paddle-type stirring mechanism having a paddle that reciprocates in parallel with the covering body.

 The stirring mechanism may be a plating solution spraying type stirring mechanism having a plurality of plating solution spray nozzles for spraying a plating solution toward a direction of the body to be covered. In this way, by spraying the plating solution from the plurality of plating solution spray nozzles toward the body to be plated, the plating solution in the plating tank is agitated to make the concentration of the plating solution uniform and, at the same time, the plating on the body to be plated By supplying each component of the liquid sufficiently, a metal film with a more uniform thickness can be formed more quickly

 The plating liquid flow path may be provided inside the adjustment plate integrally with the adjustment plate. A thick plate may be used as the adjusting plate, and a through hole may be provided inside the adjusting plate so that the through hole serves as a liquid flow path.

Still another plating apparatus of the present invention includes: a plating tank that holds a plating solution; an anode that is installed by being immersed in a plating solution in the plating tank; and an anode that is disposed to face the anode. A plating solution held in the plating tank is installed between the anode body and the body to be adhered between the anode body and the body to be adhered. An adjusting plate provided with a plating solution flow path to be circulated; a plating power supply for conducting plating between the anode and the body to be plated; and an end of the plating solution flow path on the side of the body to be plated. And an electric field adjusting ring for adjusting an electric field at an outer peripheral portion of the object to be plated. As described above, by adjusting the electric field at the outer peripheral portion of the cladding body with the electric field adjusting ring, the electric field formed between the anode and the cladding body can be more uniformly spread over the entire surface of the cladding body. In other words, it is possible to further uniformize the edge portion of the covered body, which is the power receiving unit, and to further improve the in-plane uniformity of the metal film formed on the covered body. The shape of the electric field adjustment ring is appropriately set depending on the plating tank, the shape of the body to be covered, the distance between the anode and the body to be covered, etc., and the width is generally 1 to 2 O mm, Preferably, it is set to 3 to 17 mm, more preferably to 5 to 15 mm.

 The gap between the electric field adjusting ring and the covering body is generally set to 0.5 to 30 mm, preferably 1 to 15 mm, and more preferably 1.5 to 6 mm. According to a preferred aspect of the present invention, the plating liquid flow path is formed on an inner peripheral surface of a tubular body, and the electric field adjusting ring is connected to a covered body side end of the tubular body. ing. The plating liquid flow path is formed on an inner peripheral surface of the cylindrical body, and the electric field adjusting ring is arranged separately from the cylindrical body at an end of the cylindrical body to be adhered to the body. You can. As described above, when the plating solution flow path is formed, the tubular body and the electric field adjusting ring are separated from each other, so that the range of options can be expanded.

 The plating liquid flow path may be formed on an inner peripheral surface of a tubular body, and the electric field adjusting ring may be formed on an end face of the tubular body facing the covered body. Thereby, the number of parts can be reduced. BRIEF DESCRIPTION OF THE FIGURES

 FIG. 1 is an overall layout diagram of a plating apparatus equipped with a plating apparatus according to an embodiment of the present invention.

 FIG. 2 is a schematic diagram of a transport robot provided in a plating space of the plating apparatus shown in FIG.

 FIG. 3 is a schematic sectional view of a plating apparatus provided in the plating apparatus shown in FIG.

 FIG. 4 is a schematic perspective view of a main part of the plating apparatus shown in FIG.

 FIG. 5 is a plan view of an adjustment plate provided in the plating apparatus shown in FIG.

 FIG. 6 is a diagram schematically showing a state of a metal film when a metal film (plating film) is formed by the plating apparatus shown in FIG.

7A to 7E show a process of forming bumps (protruding electrodes) on a substrate in the order of steps. It is sectional drawing shown in FIG.

 FIG. 8 is a plan view showing another example of the adjustment plate.

 FIG. 9 is a plan view showing still another example of the adjustment plate.

 FIG. 10 is a plan view showing still another example of the adjustment plate.

 FIG. 11 is a plan view showing still another example of the adjustment plate.

 FIG. 12 is a plan view showing still another example of the adjustment plate.

 FIG. 13 is a plan view showing still another example of the adjustment plate.

 FIG. 14 is a plan view showing still another example of the adjustment plate.

 FIG. 15 is a plan view showing still another example of the adjustment plate.

 FIG. 16 is a plan view showing still another example of the adjustment plate.

 FIG. 17 is a plan view showing still another example of the adjustment plate.

 FIG. 18 is a plan view showing still another example of the adjustment plate.

 FIG. 19 is a plan view showing still another example of the adjustment plate.

 FIG. 20 is a schematic sectional view showing a plating apparatus according to another embodiment of the present invention. FIG. 21A is a perspective view showing an adjustment plate and a cylindrical body provided in the plating apparatus shown in FIG.

 FIG. 21B is a front view of FIG. 21A.

 FIG. 22 is a diagram schematically showing a state of the metal film when a metal film (plating film) is formed by the plating apparatus shown in FIG.

 FIG. 23 is a schematic sectional view showing a plating apparatus according to still another embodiment of the present invention. FIG. 24A is a perspective view showing still another example of the adjusting plate and the cylindrical body.

 FIG. 24B is a front view of FIG. 24A.

 FIG. 25A is a perspective view showing another example of the adjusting plate and the cylindrical body.

 FIG. 25B is a front view of FIG. 25A.

 FIG. 26A is a perspective view showing still another example of the adjusting plate and the cylindrical body.

 FIG. 26B is a front view of FIG. 26A.

FIG. 27A is a perspective view showing still another example of the adjusting plate and the cylindrical body. FIG. 27B is a front view of FIG. 27A.

 FIG. 28 is a schematic sectional view showing a plating apparatus according to still another embodiment of the present invention. FIG. 29A is a perspective view showing an adjustment plate, a cylindrical body, and an electric field adjustment ring provided in the plating apparatus shown in FIG.

 FIG. 29B is a front view of FIG. 29A.

 FIG. 30 is a diagram schematically showing a state of the metal film when a metal film (plating film) is formed by the plating apparatus shown in FIG.

 FIG. 31 is a schematic sectional view showing a plating apparatus according to still another embodiment of the present invention. FIG. 32A is a perspective view showing another example of the adjusting plate, the cylindrical body, and the electric field adjusting ring. FIG. 32B is a front view of FIG. 32A.

 FIG. 33A is a perspective view showing still another example of the adjusting plate, the cylindrical body, and the electric field adjusting ring.

 FIG. 33B is a front view of FIG. 33A.

 FIG. 34A is a perspective view showing still another example of the adjusting plate, the cylindrical body, and the electric field adjusting ring.

 FIG. 34B is a front view of FIG. 34A.

 FIG. 35A is a perspective view showing still another example of the adjusting plate, the cylindrical body, and the electric field adjusting ring.

 FIG. 35B is a front view of FIG. 35A.

 FIG. 36 is a schematic sectional view showing a plating apparatus according to still another embodiment of the present invention. FIG. 37 is a schematic sectional view showing an example of a conventional plating apparatus.

 FIG. 38 is a schematic perspective view showing another example of the conventional plating apparatus.

 FIG. 39 is a schematic perspective view showing still another example of the conventional plating apparatus.

FIGS. 4OA to 40C are diagrams schematically showing different states of a metal film (plated film) formed by a conventional plating apparatus. BEST MODE FOR CARRYING OUT THE INVENTION

 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, an example is shown in which a substrate such as a semiconductor wafer is used as a body to be covered.

 FIG. 1 is an overall layout diagram of a plating apparatus equipped with a plating apparatus according to an embodiment of the present invention. This plating treatment equipment automatically and continuously performs all the plating processes of the pre-treatment of the substrate, the plating treatment and the post-treatment of the plating, and the inside of the equipment frame 110 with the exterior panel attached. Is a plating space 1 16 where the partition plate 1 1 2 is used for plating the substrate and the processing of the substrate to which the plating liquid is attached, and a cleaning where other processing, that is, processing that is not directly related to the plating solution, is performed. It is divided into spaces 114. Then, two board holders 160 (see FIG. 2) are arranged in parallel in a partition part separated by a partition plate 112 that separates the plating space 116 from the clean space 111. A substrate attaching / detaching table 162 as a substrate transfer section for attaching / detaching the substrate to / from each substrate holder 160 is provided. A load / unload port 120 for mounting a substrate cassette containing substrates is connected to the clean space 114, and an operation panel 122 is provided for the device frame 110. ing.

 Inside the clean space 114, there is an aligner 122 that aligns the orientation of the board, such as the orientation flat and the notch, in a predetermined direction, and a board that cleans the plated board and spins it by rotating it at a high speed. Apparatus 124 and pretreatment of the substrate, in this example, by spraying pure water on the surface of the substrate (the surface to be covered), the substrate surface is washed with pure water and wetted with pure water. Pretreatment device for pre-washing with water to improve hydrophilicity 1 2 6 force It is located at its four corners. Furthermore, each of these processing units, that is, the aligner 122, the cleaning / drying unit 124, and the pre-processing unit 126 is located substantially at the center, and each of these processing units 122, 124, 1 26, a first transfer robot 128 for transferring and transferring a substrate between the substrate loading / unloading port 120 and the substrate cassette mounted on the load / unload port 120 is provided.

Here, the aligner 1 2 2, the cleaning / drying device 1 2 4, and the pre-processing device 1 2 6 placed in the clean space 1 1 4 hold the substrate in a horizontal position with the surface facing upward and process it. The transfer robot 128 transfers and transfers the substrate while holding the substrate in a horizontal posture with the surface facing upward.

 In the plating space 1 16, in order from the partition plate 1 12 side, a stop force 1 64 for storing and temporarily placing the substrate holder 160, for example, the electric resistance of the surface of the seed layer formed on the surface of the substrate. Activator 166 for etching and removing large oxide films with chemicals such as sulfuric acid and hydrochloric acid, 1st rinsing unit 168a for rinsing the surface of the substrate with pure water, plating unit 1170 for plating, A second rinsing device 168b and a blow device 172 for draining the substrate after the plating process are arranged in this order. Further, two second transfer robots 174a and 174b are arranged to be able to travel along the rail 176 at the side of these devices. One of the second transfer robots 174a transfers the substrate holder 160 between the substrate attaching / detaching table 162 and the stock force 164, and the other second transfer robot 174b controls the stocker 1 The substrate holder 160 is transferred between the activation device 166, the first washing device 168a, the plating device 170, the second washing device 168b, and the blowing device 172.

 As shown in FIG. 2, the second transfer robots 174a and 174b include a vertically extending body 178, a vertically movable body 178, and a rotatable shaft. An arm 180 is provided. The arm 180 is provided with two substrate holder holding portions 182 for freely attaching and detaching and holding the substrate holder 160. Here, the substrate holder 160 is configured to hold the substrate W in a state where the surface is exposed and the peripheral edge is sealed, and the substrate W is freely attached and detached.

The stocker 164, the activation processing unit 166, the rinsing unit 168a, 168b and the mounting unit 170 are provided with the outwardly projecting projections 160a provided at both ends of the substrate holder 160. The substrate holder 160 is hung vertically to be supported by being hooked. The activation processing apparatus 166 is provided with two activation processing tanks 183 for holding a chemical solution therein. As shown in FIG. 2, a substrate holder 160 on which a substrate W is mounted is provided. Lower the arm 180 of the second transfer robot 174 b held in a vertical state, and if necessary, move the substrate holder 160 to the upper end of the activation processing tank 18 3 The substrate holder 160 is immersed in the chemical solution in the activation tank 183 together with the substrate W to perform the activation treatment by hanging and supporting the substrate holder.

 Similarly, the washing devices 1 668a and 1 668b have two washing tanks 1 84a and 1 8 4 1) each containing pure water inside, and the plating device 1 7 0 A plurality of plating tanks 186 each holding a plating solution therein are provided. As described above, the substrate holder 160 is mounted together with the substrate W on the pure water in these washing tanks 184a and 184b. By immersing it in water or the plating solution in plating bath 186, it is configured to perform water washing treatment and plating treatment. In addition, the blower 1 72 lowered the arm 180 of the second transfer robot 1 74 b holding the substrate holder 160 loaded with the substrate W in a vertical state, and mounted the substrate holder 160 The substrate W is configured to be blown by blowing air or an inert gas onto the substrate W to blow off the liquid adhering to the substrate holder 160 and the substrate W to drain the water.

 As shown in FIGS. 3 and 4, each plating tank 1886 of the plating apparatus 17 is configured to hold a plating solution 10 therein, and the substrate holder is contained in the plating solution 10. In step 160, the periphery is sealed in a water-tight manner, and the substrate W held with the surface (covered surface) exposed is immersed and arranged.

 On both sides of the plating tank 18 6, there is provided an overflow tank 46 for flowing the plating solution 10 which overflows the upper end of the overflow weir 44 of the plating tank 1 86. The flow tank 46 and the plating tank 18 6 are connected by a circulation pipe 48. A circulation pump 50, a constant temperature unit 52, and a filter 54 are provided inside the circulation pipe 48. As a result, the drip liquid 10 supplied to the plating tank 1886 as the circulation pump 50 is driven fills the inside of the plating tank 1886, and then overflows from the overflow weir 44. Then, it flows into the overflow tank 46 and returns to the circulation pump 50 for circulation.

Inside the plating tank 1886, a circular anode 56 conforming to the shape of the substrate W is held vertically by the anode holder 58, and is vertically installed, and the plating solution 10 is placed in the plating tank 1886. When filled, the anode 56 is immersed in this plating solution 10 I have. Further, the inside of the plating tank 186 is partitioned between the anode 56 and the substrate holder 160 to partition the inside of the plating tank 186 into an anode side chamber 40a and a substrate side chamber 40b, and the plating liquid 10 held in the plating tank 186 is supplied to the anode An adjustment plate 60 is installed on the side and the substrate side.

 A plurality of paddles 62 hanging downward are provided between the substrate holder 160 and the adjustment plate 60, and the paddles 62 are positioned inside the plating solution 10 in the substrate side chamber 40b and held by the substrate holder 160. A paddle-type stirring mechanism 64 that stirs the plating solution in the substrate side chamber 40 b by reciprocating in parallel with the substrate W is disposed.

 The adjusting plate 60 has, for example, a thickness of about 0.5 to about L Omm and is made of a dielectric material made of PVC, PP, PEEK, PES, HT-PVC, PFA, PTFE, and other resin-based materials. I have. Then, a predetermined area inside the adjustment plate 60, that is, an area facing the surface of the substrate W when the substrate W is held by the substrate holder 160 and arranged at a predetermined plating position in the plating tank 186. A through-hole group 68 including a large number of through-holes 66 is provided in substantially the entire area of the substrate and in a circular region similar to the substrate W.

 Here, in this example, as shown in detail in FIG. 5, a through hole 66 is formed by a slit-like elongated hole extending linearly in the horizontal direction, and the through hole (elongated hole) 66 is formed in the outer shape of the substrate W. The through-hole group 68 is configured by being arranged linearly and side-by-side in a circular area B along. The width of the through hole (slot) 66 is generally about 0.5 to 20 mm, preferably about 1 to 15 mm, and the length is arbitrary according to the size (diameter) of the substrate W. Is set to

In this way, a through-hole group 68 including a large number of through-holes 66 is provided inside the adjustment plate 60, and during plating, an electric field leaks through each of the through-holes 66 so that the leaked electric field spreads evenly. By doing so, the potential distribution over the entire surface (covered surface) of the substrate W can be made more uniform, and the in-plane uniformity of the metal film formed on the surface of the substrate W can be further improved. In addition, by suppressing the plating solution 10 from passing through the many through holes 66 provided in the adjusting plate 60 provided in the plating tank 186, the flow of the plating solution 10 is reduced. It is possible to prevent the thickness of the metal film formed on the surface of the substrate W from being uneven due to the influence of (return of the plating solution).

 In particular, by using a slit-shaped long hole as the through hole 66, it is possible to promote the leakage of the electric field while suppressing the flow of the plating solution 10 in the through hole (the long hole) 66. Wear. Further, a through-hole group 68 including a large number of through-holes 66 is formed over substantially the entire region of the adjustment plate 60 facing the surface of the substrate W and in a circular region similar to the substrate W. Thus, a metal film having good film thickness uniformity in all directions on the surface of the substrate W can be formed.

 According to the plating apparatus 170, first, the plating solution 10 is filled in the plating tank 186 and the plating solution 10 is circulated as described above. In this state, the substrate holder 160 holding the substrate W is lowered, and the substrate W is placed at a predetermined position where the substrate W is immersed in the plating liquid 10 in the plating tank 186. In this state, the anode 56 is connected to the anode of the power supply 24 via the conductor 22a, and the substrate W is connected to the cathode of the power supply 24 via the conductor 22b. By driving the stirring mechanism 64, the paddle 62 is reciprocated along the surface of the substrate W to stir the plating solution 10 in the substrate side chamber 40b. Is deposited to form a metal film. At this time, as described above, the electric field leaks through the many through holes 66 provided inside the adjustment plate 60, and the leaked electric field is spread evenly, so that the surface of the substrate W (covering By making the potential distribution over the entire surface (surface) more uniform, it is possible to form a metal film P with higher in-plane uniformity on the surface of the substrate W as shown in FIG. Moreover, by agitating the plating solution 10 between the substrate W and the adjustment plate 60 with the paddle 62 during the plating process, sufficient ions can be removed from the substrate W while losing directionality in the flow of the plating solution. The metal film having a more uniform thickness can be formed more quickly by supplying the material more uniformly to the surface.

Then, after the plating is completed, the plating power source 24 is separated from the substrate W and the anode 56, and the substrate holder 160 is pulled up together with the substrate W, and after performing necessary processing such as washing and rinsing the substrate W. Then, the substrate W after plating is transferred to the next process. A series of bump attachment processing by the plating equipment configured as described above will be described with further reference to FIG. First, as shown in FIG. 7A, a seed layer 500 as a power supply layer is formed on the surface, and the height H is, for example, 20 to 120 μm on the surface of the seed layer 500. After applying the resist 502 on the entire surface, a substrate W provided with an opening 502 a having a diameter of, for example, about 20 to 200 / zm at a predetermined position of the resist 502 is placed on the surface thereof. (Substrate facing up), put it in a substrate cassette, and mount this substrate cassette on the load / unload port 120.

 From the substrate cassette mounted on the load / unload port 120, one substrate W is taken out by the first transfer robot 128, placed on the aligner 122, and the position of the orientation notch is set in a predetermined direction. Match. The substrate W aligned in the direction by the aligner 122 is transferred to the pretreatment device 126 by the first transfer robot 128. Then, in this pretreatment device 126, pretreatment using pure water as a pretreatment liquid (rinsing pretreatment) is performed. On the other hand, the substrate holder 160 stored in the vertical position in the stocker 164 is taken out by the second transfer robot 174a, and it is rotated 90 ° and placed in a horizontal state to remove the substrate 1 6 Place two in parallel on 2.

 Then, the substrate W that has been subjected to the above-described pre-treatment (washing pre-treatment) is mounted on the substrate holder 160 mounted on the substrate attaching / detaching table 16 2 with its peripheral edge sealed. Then, the two substrate holders 160 on which the substrate W is mounted are simultaneously held by the second transport robot 1774a, raised, and then transported to the stocker 1664, and rotated 90 °. Then, the substrate holder 160 is set in a vertical state, and then lowered, whereby the two substrate holders 160 are suspended and held (temporarily placed) by the stop force 164. This operation is sequentially repeated, and the substrates are sequentially mounted on the substrate holders 160 accommodated in the stockers 1664, and are sequentially suspended and held (temporarily placed) at predetermined positions of the stockers 1664.

On the other hand, in the case of the second transfer robot 174b, the two substrate holders 160, on which the substrates are mounted and temporarily placed at the stocking force 164, are simultaneously held, raised, and then activated. The substrate is immersed in a chemical solution such as sulfuric acid or hydrochloric acid placed in the activation treatment tank 18 3 to etch the oxide film with high electrical resistance on the surface of the seed layer, and clean metal Expose the surface. Further, the substrate holder 160 on which the substrate is mounted is transported to the first rinsing device 168a in the same manner as described above, and the surface of the substrate is rinsed with pure water in the rinsing tank 184a. Wash with water.

 The substrate holder 160 on which the rinsed substrate is mounted is transferred to the plating apparatus 170 in the same manner as described above, and the plating tank is immersed in the plating solution 10 in the plating tank 186. The surface of the substrate W is plated by suspending and supporting it on 186. Then, after a lapse of a predetermined time, the substrate holder 160 on which the substrate is mounted is again held by the second transfer robot 174b, pulled up from the plating tank 186, and the plating process is completed.

 Then, in the same manner as described above, the substrate holder 160 is transported to the second washing device 1668b, and is immersed in pure water in the washing tank 1884b to clean the surface of the substrate with pure water. I do. Thereafter, the substrate holder 160 on which the substrate is mounted is conveyed to the blower 172 in the same manner as described above, where an inert gas or air is blown toward the substrate, and the substrate holder 16 Remove the plating solution and water droplets attached to 0. Thereafter, the substrate holder 160 on which the substrate is mounted is returned to a predetermined position of the stocker 164 and suspended and held in the same manner as described above.

 The second transfer robot 174 b sequentially repeats the above operation, and returns the substrate holder 160 on which the plated substrate is mounted to the predetermined position of the stop force 164 in order, and suspends the substrate holder.

 On the other hand, in the second transfer robot 1774a, two substrates holders 160, which have mounted the plated substrate and returned to the stocking force 1664, are simultaneously held, and in the same manner as described above, It is placed on the substrate mounting table 1 62.

Then, the first transfer robot 128 disposed in the cleaning space 114 removes the substrate from the substrate holder 160 placed on the substrate mounting table 162, and cleans the substrate. · Conveyed to drying device 1 2 4 Then, the substrate held horizontally with its surface facing upwards is washed with pure water or the like by this washing / drying device 124 and spin-dried by high-speed rotation. Return to the substrate cassette mounted on the loading / unloading port 120 at 28 to complete a series of plating processes. This As a result, as shown in FIG. 7B, a substrate W having a plated film 504 grown in the opening 502 a provided in the resist 502 is obtained.

 Then, the substrate W spin-dried as described above is immersed in a solvent such as acetone at a temperature of 50 to 60 ° C., for example, and a resist 5 on the substrate W is formed as shown in FIG. 7C. Then, as shown in FIG. 7D, unnecessary seed layer 500 exposed outside after plating is removed. Next, the plating film 504 formed on the substrate W is reflowed to form a bump 506 which is rounded by surface tension as shown in FIG. 7E. Further, the substrate W is subjected to annealing at a temperature of, for example, 100 ° C. or more to remove residual stress in the bumps 506.

 According to this example, the transfer of the substrate in the plating space 1 16 is performed by the second transfer robots 17 4 a and 17 4 b arranged in the mounting space 1 16 in the clean space 1 14. The first transfer robot 1 28 arranged in the clean space 114 transfers the substrates of the respective substrates, thereby continuously performing the pre-processing of the substrate, the plating process, and the post-processing of the plating. In addition to improving the cleanliness around the substrate inside the plating equipment, the throughput of the plating equipment is improved, and the load on the auxiliary equipment of the plating equipment is further reduced. The size can be further reduced.

 In this example, a plating apparatus having a small footprint and having a plating tank 186 is used as the plating apparatus 170 for performing the plating process. In addition to miniaturization, it is possible to further reduce the load on facilities attached to factories. In FIG. 1, one of the two washing / drying devices 124 installed may be replaced with a pretreatment device.

8 to 19 show different examples of the through-hole group including a large number of through-holes in the adjustment plate 60. FIG. That is, in FIG. 8, a through hole 66a is formed by a slit-shaped elongated hole extending linearly in the vertical direction, and the through hole (slot) 66a is formed in a circular area along the outer shape of the substrate W. The through-hole group 68a is configured by arranging them in a straight line and in parallel. Fig. 9 shows the case where a rectangular substrate is used as the substrate W. The through-holes (slots) 66 b are arranged linearly and in parallel in a rectangular area along the outer shape of the substrate W to form a through-hole group 68 b.

 FIG. 10 shows a plurality of through-holes (slots) 66 c formed of slits extending linearly over almost the entire width of a region of the adjustment plate 60 facing the surface of the substrate W. A hole group 68 c is formed. Also in this case, when a rectangular shape is used as the substrate W, the through hole (slot) 66 d is placed in a rectangular area along the outer shape of the substrate W as shown in FIG. The through-hole group 68 d may be arranged in parallel. Although not shown, these through holes 66d may extend linearly in the vertical direction.

 Fig. 12 shows a configuration in which a plurality of through-holes (cross-shaped holes) 66 e composed of cross-shaped holes extending in a cross shape in the vertical and horizontal directions are equally arranged in a circular area to form a through-hole group 68 e. is there. Also in this case, when a rectangular substrate is used as the substrate W, the through hole (cross-shaped hole) 66 f should be placed in the rectangular area along the outer shape of the substrate W as shown in FIG. The holes may be evenly arranged to form a through hole group 6 8 f.

Fig. 14 shows a group of 68 g of through-holes in which 66 g of a plurality of through-holes (pores) are evenly distributed in a circular region. The diameter of each through-hole (pore) 66 g is set to 2 mm in this example, and a total of 633 is provided in the example shown. The diameter of the through hole 66 g and the following small holes (peripheral holes) 66 h _{2 to} 66 h ₅ are arbitrarily set, for example, in the range of 1 to 2 O mm. About 0 mm is preferable. In this way, by forming 66 g of the through-holes (pores) into 68 g of the through-hole group, the productivity of the adjusting plate 60 can be improved.

Figure 15 shows multiple holes with different diameters, that is, a large-diameter large hole (center hole) 6 6 1 ^ located at the center, and the outer periphery of the large hole 6 6 1 ^ along the circumferential direction. Plural rows (four rows in the figure) of small holes (peripheral holes) that are arranged and decrease in diameter as they go in the diameter direction 6 6 h ₂ to 66 h ₅ 8 h. The diameter of this large hole (center hole) 66 1 ^ is set to 84 mm in this example, but is set arbitrarily in the range of 50 to 30 O mm, for example, to 30 to 10 0 mm. O mm is preferable. The diameter of the small holes (peripheral _{holes) 6 6 h 2 ~6 6 h} c is, 1 0 mm, 8 mm, 7 mm and 6 mm respectively.

1 6 has a center hole 6 6 ii centrally located, the center hole 6 disposed outside the 6 i, a plurality of rows (in the illustrated five rows) extending in the circumferential direction of the slot 6 6 i ₂ a plurality of through holes 66 i consisting of -66 i ₆ is obtained by constituting the through hole groups 6 8 i. The diameter of the central hole 66 i丄, in this example, is set to 34 mm, the width of the slot 66 i ₂ ~6 ₆ i 6 is, 2 7mm, 1 8. 5mm, 7 mm, 7 mm, 7 mm Are set respectively. Figure 17 shows a large-diameter large hole (central hole) 66ji located at the center, and a circumferentially extending long hole arranged outside the central hole 66ji along the circumferential direction. 6 6 and j _2, this is located outside of the long hole 66 j _2, small holes (peripheral holes) of a plurality of rows which diameter decreases toward the diameter direction (four rows in the figure) 66 j ₃ -66 j A through hole group 68 j is constituted by a plurality of through holes 66 j composed of _six . The diameter of the large hole (center hole) 66 ji is 67 mm in this example, the width of the long hole 66 j ₂ is 17 mm, and the small hole (peripheral hole) 66 j _{3 to} 66 j ₆ The diameters are set at 9mm, 8mm, 7mm and 6mm respectively.

Figure 18 shows a large-diameter large hole (central hole) 661 ^ located at the center and a plurality of circumferentially extending holes arranged outside the central hole 66k along the circumferential direction. column long hole 66 k ₂ of (in the illustrated two rows), 66 k 3, this is located outside of the slot 6 6 k _3, two rows in the plurality of rows (illustrated diameter decreases toward the diameter direction ) in which small holes (peripheral holes) constitute 6 6 k _4, 66 k plurality of through holes 6 6 k by passing hole group 6 8 k consisting of _5. The diameter of the large hole (center hole) 66 ki is 80 mm in this example, the width of the long holes 66 k ₂ and 66 k ₃ is 7 mm, and the small holes (peripheral holes) 66 k ₄ and 66 k ₅ The diameters are set at 6 mm and 4 mm, respectively.

Fig. 19 shows a large-diameter large hole (center hole) 661i located at the center, and a radially arranged outside the center hole 661i at a predetermined pitch along the circumferential direction. it is obtained by constituting the through hole groups 68 1 by a plurality of through holes 66 1 including a plurality of slit-like long holes 66 1 ₂ extending linearly in. The width of the long hole 66 1 ₂ is generally on the order of 0. 5 to 20 m m, is preferably about 1 to 1 5 mm. Also, the length is It is set arbitrarily according to the shape of the body.

 By combining a plurality of through-holes of any shape, such as a plurality of fine holes, a plurality of holes having different diameters, or a long hole extending in a slit shape, a through-hole group is formed, thereby providing a plating place and conditions. And so on.

 In the examples shown in FIGS. 14 to 19 described above, the through holes are arranged inside the circular region to form a group of through holes. However, as described above, a rectangular substrate is used as the substrate. When the through holes are used, it is a matter of course that these through holes may be arranged in a rectangular area along the outer shape of the substrate to form a through hole group.

 As described above, according to the present invention, the electric field leaks through a large number of through-holes provided inside the adjustment plate installed in the plating tank, and the leaked electric field is uniformly spread, so that the covering is performed. By making the potential distribution over the entire surface of the attached body more uniform, the in-plane uniformity of the metal film formed on the attached body can be further improved. Also, by suppressing the plating solution from passing through a large number of through holes provided inside the adjustment plate installed in the plating tank, the plating solution is affected by the flow of the plating solution, and Nonuniformity in the thickness of the formed metal film can be prevented.

FIG. 20 shows a plating apparatus 170a according to another embodiment of the present invention, and FIG. 21 shows an adjusting plate and a cylindrical body forming a plating liquid flow path used in the plating apparatus 170a. Show. The difference from the example shown in FIGS. 3 to 5 of this plating device 170 a is that the adjusting plate 60 has a thickness of, for example, about 0.5 to 1 Omm and a substrate held by a substrate holder 160 at the center thereof. A central hole 60a having an inner diameter D facing the outer diameter of the substrate W and facing the W is used. A cylindrical body 200 equal to the inner diameter D of the cylindrical body 200 is connected concentrically and continuously, whereby the plating solution flow path through which the plating solution 10 flows through the inner peripheral surface of the cylindrical body 200 while allowing the electric field to pass uniformly. This is the point that formed 200a. This cylindrical body 200 is made of a dielectric material made of, for example, PVC, PP, PEEK, PES, HT-PVC, PFA, PTFE, and other resin-based materials, similarly to the adjustment plate 60. Other configurations are the same as those shown in FIGS. is there.

 Here, the central hole of the adjusting plate 60 and the inner diameter D of the cylindrical body 200 are generally equal to the outer diameter of the surface of the substrate W to be plated (the outer diameter of the surface to be covered) ± 10 mm. Preferably, the diameter is set to about ± 5 mm, which is equal to the outer diameter of the covering surface, and more preferably, about ± 1 mm, which is equal to the outer diameter of the covering surface. The length L of the cylindrical body 200 is appropriately determined by the shape of the plating tank 1886, the distance between the anode 56 and the substrate W, etc.1S In general, 10 to 90 mm, preferably , 20 to 75 mm, more preferably 30 to 60 mm.

 As described above, the electric field formed between the anode 56 and the substrate W in the plating tank 1886 is arranged along the liquid flow path 200a, that is, the inside of the cylindrical body 200 is formed by the cylindrical body. By making it pass uniformly without leaking out of 200, the distortion and bias of the electric field are adjusted and corrected, and the potential distribution over the entire surface of the substrate W is made more uniform, as shown in Fig. 22. As described above, on the surface of the substrate W, it is possible to form the metal film P with slightly increased in-plane uniformity, although the film thickness is slightly increased at the edge of the substrate W.

 In other words, the thickness of the adjusting plate 60 is generally as thin as about 0.5 to 10 mm with only the adjusting plate 60 having the central hole 60a therein. The regulation of the electric field formed between the anode 56 and the substrate W by the adjustment plate 60 alone is insufficient, causing distortion and bias in the electric field, especially the film thickness at the edge of the substrate that is the power receiving part. However, as shown in this example, by restricting the passage of an electric field over the length L of the cylindrical body 200, such an adverse effect can be prevented and the in-plane surface of the metal film can be prevented. Uniformity can be improved.

In this example, similarly to the examples shown in FIGS. 3 to 5 described above, a plurality of paddles 6 hanging down between the cylindrical body 200 and the substrate W held by the substrate holder 160 are provided. A paddle-type stirring mechanism 64 equipped with a paddle-type stirring mechanism 64 is disposed.During plating, the paddle-type stirring mechanism 64 is driven to reciprocate the paddle 62 along the surface of the substrate W, and the substrate side chamber 40 b By stirring the plating solution 10 inside, a sufficient ion is supplied more evenly to the surface of the substrate W while the direction of the plating solution flow is lost, and a metal film having a more uniform film thickness is more quickly formed. It can be formed quickly.

 FIG. 23 shows a plating apparatus 17 Ob according to still another embodiment of the present invention. The difference from the example shown in FIGS. 21 and 22 of this plating device 170 b is that a paddle-type stirring mechanism 6 is provided between the cylindrical body 200 and the substrate W held by the substrate holder 160. 4 in that a plating solution jetting type stirring mechanism 202 is provided instead of 4. In other words, the plating liquid injection type stirring mechanism 202 is formed of, for example, a ring-shaped pipe, communicates with the circulation pipe 48, and is immersed in the plating liquid 10 of the plating tank 1886. Attached solution supply pipe 204 and this plating liquid supply pipe 204 are attached at predetermined positions along the circumferential direction, and are directed to substrate W holding plating solution 10 with substrate holder 16 °. And a plurality of plating liquid jet nozzles 206 for jetting. Then, the plating solution 10 sent with the driving of the pump 50 is supplied to the plating solution supply pipe 204, and is sprayed from the plating solution spray nozzle 206 toward the substrate, so that the plating tank 1. It is introduced into 86, and overflows at the upper end of the overflow weir 44 to circulate.

 In this way, by spraying the plating solution 10 from the plurality of plating solution spray nozzles 206 toward the substrate W, the plating solution 10 in the plating tank 186 is stirred to make the plating solution concentration uniform. At the same time, the components of the plating liquid 10 are sufficiently supplied to the substrate W, and a metal film having a more uniform film thickness can be formed more quickly.

 In the above-described example, a force is shown in which the cylindrical body 200 is connected to the surface of the adjustment plate 60 on the substrate W side. As shown in FIG. 24, a fitting hole is formed in the adjustment plate 60. A cylindrical body 200 having an inner diameter D and a length of 200 b and having a liquid flow path 200 a was fitted in the fitting hole 60 b, and a cylindrical body was provided. The cylindrical body 200 may be held at a predetermined position along the length direction of 200. As a result, even when the distance between the adjusting plate 60 and the “Donore 62” (see FIG. 20) and the attachment liquid supply pipe 204 (see FIG. 23) is short, the cylindrical body 200 can be used. By projecting the rear side of the adjusting plate 60, a sufficient length L as the cylindrical body 200 can be secured.

Further, as shown in FIG. 25, a large number of through holes 200b large enough to prevent electric field leakage may be provided on the peripheral wall of the cylindrical body 200. This results in electric field leakage The plating solution 10 flows through the through hole 200b provided in the peripheral wall of the cylindrical body 200 while preventing the plating solution 200 from flowing, so that the concentration of the plating solution 10 is biased inside and outside the cylindrical body 200. Can be prevented. The shape of this through-hole may be other than that of this example. Examples include a slit-shaped long hole, a cross hole extending vertically and horizontally, and a combination thereof.

 Further, as shown in FIG. 26, the adjusting plate 210 is formed of a plate having a sufficient thickness, and a through hole having a predetermined inner diameter is provided at a predetermined position of the adjusting plate 210. A plating solution flow path 210a having a predetermined length L with an inner diameter D of the plating solution may be formed. In the case of this example, the number of members can be reduced.

 Further, as shown in FIG. 27, a rectangular block 212 having a sufficient thickness is prepared, and a plating solution flow path having a predetermined inner diameter D and a predetermined length L is formed by a through hole provided in the rectangular block 212. 210a may be formed, and this rectangular block 212 may be connected to the substrate W side surface of the adjusting plate 60 having the central hole 60a.

 FIG. 28 shows a plating apparatus 170c according to still another embodiment of the present invention. FIG. 29 shows an adjustment plate and a cylinder forming a plating solution flow path used in the plating apparatus 170c shown in FIG. 2 shows the body and the electric field adjustment ring. The differences between the mounting device 170c and the example shown in FIGS. 20 and 21 are as follows. That is, an electric field adjusting ring 220 having an inner diameter equal to the inner diameter D of the cylindrical body 200 and having a width A is concentrically formed on the end face of the substrate W side of the cylindrical body 200 having the liquid flow path 2 OOa formed on the inner peripheral surface. The electric field adjustment ring 220 is disposed close to the substrate W with a gap G1 from the substrate W. Further, a paddle-type stirring mechanism 64 having a plurality of paddles 62 that drop downward and reciprocate in parallel with the substrate W held by the substrate holder 160 to stir the plating solution is connected to the anode side chamber 40a side anode. The plating solution 10 in the anode-side chamber 40a is agitated by the paddle-type agitation mechanism 64, which is disposed between the adjustment plate 60 and the adjustment plate 60. Other configurations are the same as the examples shown in FIGS. 20 and 21.

Here, the electric field adjusting ring 220 is made of, for example, PVC, PP, PEEK, PES, HT—PVC, PFA, PTFE, or the like, similarly to the adjusting plate 60 or the cylindrical body 200. Of a resin-based material. The shape of the electric field adjusting ring 220 is appropriately set depending on the shape of the plating tank 1886 and the substrate W, the distance between the anode 56 and the substrate W, etc., and the width A is generally It is set to l to 20 mm, preferably 3 to 17 mm, and more preferably 5 to 15 mm. The gap G1 between the electric field adjusting ring 220 and the substrate W is generally set to 0.5 to 3 O mm, preferably to 1 to 15 mm, and more preferably to 1.5 to 6 mm. Is done.

 This electric field adjusting ring 220 is for adjusting the electric field of the outer peripheral portion of the substrate W by covering the outer peripheral portion of the substrate W with a predetermined width at a position close thereto. As described above, by adjusting the electric field at the outer peripheral portion of the substrate W with the electric field adjusting ring 220, the electric field formed between the anode 56 and the substrate W can be more uniformly spread over the entire surface of the substrate W. In other words, the metal film P is further uniformized up to the edge of the substrate W, which is the power receiving unit, and the surface of the substrate W, including the edge of the substrate W, is further enhanced in-plane uniformity as shown in FIG. Can be formed.

 FIG. 31 shows a plating apparatus 170 d according to still another embodiment of the present invention. This plating device 170 d is provided between the anode 56 of the anode side chamber 40 a and the adjusting plate 60 instead of the paddle type stirring mechanism 64 in the plating device shown in FIGS. 28 and 29. A plating solution jet type stirring mechanism 202 shown in FIG. 23 is disposed. In other words, in this example, the plating solution 10 sent along with the driving of the pump 50 is supplied to the plating solution supply pipe 204, and the plating solution injection nozzle 206 and the cylindrical body 200 are supplied. The liquid is sprayed toward the associated liquid flow path 200a, introduced into the plating tank 186, and further circulated by overflowing the upper end of the overflow weir 44. Other configurations are the same as those shown in FIGS. 28 and 29.

In this way, the plating solution spray type stirring mechanism 202 is disposed in the anode side chamber 40a, and the plating solution is sprayed from the plating solution spray nozzle 206 to the cylindrical body 200 through the plating solution flow path 200a. When the gap G 1 between the electric field adjustment ring 220 and the substrate W held by the substrate holder 160 is narrow, the liquid flow path 200 a The plating solution can be supplied to the substrate W held by the substrate holder 160 You.

 Here, as shown in FIG. 32, almost the same as the case shown in FIG. 24 described above, a fitting hole 60 b is provided in the adjustment plate 60, the inner diameter D, the length L, and the inner peripheral surface A cylindrical body 200 having an electric field adjusting ring 220 attached to the end as an attachment liquid flow path 200a is fitted into the fitting hole 60b, and the length of the cylindrical body 200 The cylindrical body 200 may be held at a predetermined position along the direction.

 In addition, as shown in FIG. 33, almost the same as the case shown in FIG. 25 described above, the electric field is prevented from leaking to the peripheral wall of the cylindrical body 200 having the electric field adjusting ring 220 attached to the end face. A large number of large through holes 200b are provided to prevent leakage of the electric field, and the liquid 10 flows through the inside of the through holes 200b provided in the peripheral wall of the cylindrical body 200. You may do so.

 Further, as shown in FIG. 34, the electric field adjusting ring 220 is supported by the support 222 without being fixed to the end face of the cylindrical body 200, and the end face of the cylindrical body 200 on the substrate W side is provided. May be arranged with the gap G2 in front of the substrate W. This gap G2 is generally 0.5 to 3 O mm, preferably 1 to 15 mm, and more preferably, similarly to the gap G1 between the electric field adjustment ring 220 and the substrate W. Set to 1.5 to 6 mm. As described above, when the plating solution flow path 200a is configured, the selection range can be expanded by separating the cylindrical body 200 and the electric field adjustment ring 220.

 Further, as shown in FIG. 35, a plating solution flow path 2 24 a having a predetermined inner diameter D and a length L is formed on the inner peripheral surface of the thick ring 22 4 having a sufficient thickness, The electric field adjusting ring 222b having a predetermined width A may be formed on the end face of the thick ring 222 on the substrate side. Thereby, the number of parts can be reduced.

 In each of the above-described examples, an example is shown in which the present invention is applied to a plating apparatus employing a so-called dip method. However, the present invention can also be applied to a face-down type or face-up type employing a drilling apparatus.

Fig. 36 shows an example in which the present invention is applied to a plating apparatus employing the face-down method. In this example, the following configuration is added to the conventional plating apparatus shown in FIG. In other words, an adjustment plate 230 having a central hole 230a therein is disposed above the plating tank 12 and The inside of the plating tank 12 is shut off to the anode side chamber 12a and the substrate side chamber 12b, and the plating solution flow path 2 is formed on the upper surface of the adjusting plate 230 with the same inner diameter as the central hole 230a. A cylindrical body 2332 having an inner peripheral surface forming 32a is mounted concentrically so as to protrude upward. As a result, an electric field formed between the anode 16 and the substrate W in the plating tank 12 is formed along the plating solution flow path 23a, that is, the inside of the cylindrical body 23 is formed by the cylindrical body. By allowing the electric field to pass uniformly without leaking to the outside of the body 232, the electric field can be adjusted and corrected for distortion and deviation, and the electric potential distribution over the entire surface of the substrate W can be made more uniform.

 An electric field adjustment ring having an inner diameter equal to the inner diameter of the cylindrical body and having a predetermined width is concentrically attached to the upper end surface of the cylindrical body. To adjust the electric field at the outer peripheral portion of the substrate w, thereby making the electric field formed between the anode and the substrate more uniform up to the wedge portion of the substrate as the power receiving portion. It is a matter of course that a metal film having higher in-plane uniformity may be formed on the surface of the substrate, including the edge portion of the substrate.

Claims

The scope of the claims

1. A plating bath for holding the plating solution,

 An anode installed by being immersed in a plating solution in the plating tank;

 An adjusting plate installed between the anode and a cladding body arranged to face the anode;

 A plating power supply for performing plating by energizing between the anode and the body to be plated;

 The adjusting plate is installed so as to block the plating solution held in the plating tank between the anode side and the covering body side, and a through hole group including a large number of through holes is provided therein. A mounting device characterized in that it is mounted.

2. The plating apparatus according to claim 1, wherein the through-hole group includes a plurality of elongated holes extending linearly or arcuately in one direction in a slit shape.

3. The plating apparatus according to claim 1, wherein the through hole group includes a plurality of cross holes extending in a cross shape in the vertical and horizontal directions.

4. The plating apparatus according to claim 1, wherein the through-hole group is composed of an arbitrary combination of a plurality of pores, a plurality of holes having different diameters, or slits extending in a slit shape.

5. The through-hole group is formed in a region substantially similar to the covered body over substantially the entire area of the adjustment plate facing the covered body. Item 1. The plating apparatus according to item 1.

6. The plating apparatus according to claim 1, further comprising a stirring mechanism for stirring the plating solution held in the plating tank, between the adherend and the adjustment plate.

7. The plating apparatus according to claim 6, wherein the stirring mechanism is a paddle-type stirring mechanism having a paddle that reciprocates in parallel with the covering body.

8. The plating apparatus according to claim 1, wherein the anode and the adjustment plate are installed in a vertical direction.

9. A plating bath for holding the plating solution,

 An anode installed by being immersed in a plating solution in the plating tank;

 An adjusting plate installed between the anode and a cladding body arranged to face the anode;

 A plating power supply for performing plating by energizing between the anode and the body to be plated;

 The adjusting plate is provided so as to block the plating solution held in the plating tank between the anode side and the covering body side, and allows the plating solution to flow while uniformly passing an electric field therein. A plating device comprising a flow path.

10. The plating apparatus according to claim 9, wherein the length of the plating liquid flow path is set to 10 to 9 O mm.

11. The plating apparatus according to claim 9, wherein the plating liquid flow path is formed on an inner peripheral surface of a cylindrical body or a rectangular block.

12. The plating apparatus according to claim 11, wherein a plurality of through-holes having a size for preventing leakage of an electric field are provided in a peripheral wall of the cylindrical body.

13. At least one of between the adhered body and the adjusting plate or between the force sword and the adjusting plate has a stirring mechanism for stirring the plating solution held in the plating tank. The plating apparatus according to claim 9, wherein

14. The plating apparatus according to claim 13, wherein the stirring mechanism is a paddle-type stirring mechanism having a paddle that reciprocates in parallel with the covering body.

15. The stirring mechanism according to claim 13, wherein the stirring mechanism is a plating solution spraying type stirring mechanism having a plurality of plating solution spray nozzles for spraying a plating solution toward the body to be covered. The plating apparatus described in the above.

16. The plating apparatus according to claim 13, wherein the plating liquid flow path is provided integrally with the adjustment plate inside the adjustment plate.

1 7. A plating bath for holding the plating solution,

 An anode installed by being immersed in a plating solution in the plating tank;

 A plating solution held in the plating tank is disposed between the anode and the plating object disposed so as to face the anode, so as to block the plating solution between the anode side and the plating object side, An adjusting plate provided with a plating liquid flow path through which the plating solution flows while allowing the electric field to uniformly pass therethrough,

 A plating power supply for performing plating by energizing between the anode and the body to be plated; and an electric field at an outer peripheral portion of the body to be plated which is located at an end of the plating liquid flow path on the side of the body to be plated. An electric field adjusting ring for adjusting the electric field.

18. The plating apparatus according to claim 17, wherein the width of the electric field adjustment ring is set to 1 to 2 O mm.

19. The plating apparatus according to claim 17, wherein a gap between the electric field adjusting ring and the covering body is set to 0.5 to 3 Omm.

20. The plating liquid flow path is formed on an inner peripheral surface of a tubular body, and the electric field adjusting ring is connected to an end of the tubular body that is attached to the tubular body. Plating equipment described in Item 17.

21. The plating apparatus according to claim 20, wherein a plurality of through-holes having a size for preventing leakage of an electric field are provided in a peripheral wall of the cylindrical body.

22.The plating liquid flow path is formed on the inner peripheral surface of the cylindrical body, and the electric field adjustment ring is arranged separately from the cylindrical body at an end of the cylindrical body to be covered. The plating apparatus according to claim 17, characterized in that:

23. The plating liquid flow path is formed on an inner peripheral surface of a cylindrical body, and the electric field adjusting ring is formed on an end surface of the cylindrical body that is covered with the body. 17 The plating equipment described in 7.

24. At least one of between the adhered body and the adjustment plate or between the force sword and the adjustment plate has a stirring mechanism for stirring the plating solution held in the plating tank. The plating apparatus according to claim 17, characterized in that:

25. The plating apparatus according to claim 24, wherein the stirring mechanism is a paddle-type stirring mechanism having a paddle that reciprocates in parallel with the covering body.

26. The stirring mechanism according to claim 24, wherein the stirring mechanism is a plating solution spraying type stirring mechanism having a plurality of plating solution spray nozzles for spraying a plating solution toward the direction of the body to be covered. The plating apparatus described in the above.