WO2018205404A1

WO2018205404A1 - Electroplating apparatus and electroplating method for wafer

Info

Publication number: WO2018205404A1
Application number: PCT/CN2017/093143
Authority: WO
Inventors: 李俊镐; 刘智宇; 张启亮
Original assignee: 创弘智能芯片研究院（深圳）有限公司
Priority date: 2017-05-09
Filing date: 2017-07-17
Publication date: 2018-11-15
Also published as: CN107354496A; CN207210560U; HK1246371A1

Abstract

Provided is an electroplating apparatus for a wafer, the electroplating apparatus comprising a single operating chamber (7) and a plurality of storage tanks (121, 122, 123, 124, 125, 126) for storing liquids, wherein the plurality of storage tanks are respectively led to the single operating chamber (7) through pipes, and successively provide the single operating chamber (7) with the stored liquids in a controlled manner; and the single operating chamber (7) is constructed so as to separately receive the liquids from one or more storage tanks in a controlled manner, and holds a wafer (3) in a position-fixed manner, such that the wafer (3) is applied with a plating in the single operating chamber (7). The invention integrates different processes of wafer electroplating to complete same in one operating chamber, thus reducing the risk of physical damage to the wafer, simplifying the structure of the electroplating apparatus, reducing the production and maintenance costs of the electroplating apparatus, and improving the production efficiency of the electroplating apparatus. Also provided is an electroplating method for a wafer, and the electroplating method is performed by means of the electroplating apparatus as stated above.

Description

Wafer plating equipment and plating method

Technical field

The present invention relates to the field of processing technology for semiconductor wafers (crystal cells). More specifically, the present invention relates to a plating apparatus for a wafer and a plating method.

Background technique

It is well known that electroplating (also known as "electrochemical deposition") devices are widely used in the fabrication and packaging of semiconductor integrated circuits for conductive metal materials on semiconductor wafer surfaces (eg, copper: Cu ⁺⁺ + 2e ^- = Cu). Formation. Such electroplating typically involves plating a seed conductive layer in a front-end integrated circuit process and implementing a damascene copper interconnect, or a wafer surface metal bump formation in a wafer level package for integrated circuit back-end processing. The existing mainstream technology mainly adopts a horizontal rotary (including vertical jet flow) electroplating technology, and the implementation equipment of the electroplating technology generally includes a cathode terminal connected to the wafer, an anode terminal connected to the metal to be deposited, a rotary drive system, A current control system or the like, and has two types, that is, one side of a wafer to be plated (circuit layout) (hereinafter referred to as "wafer front side") is horizontally upward and horizontally downward.

In a method and apparatus in which the front side of the wafer is horizontally downward, the wafer (cathode) is placed horizontally directly above the plating tank of the operating chamber, and the anode terminal is disposed vertically below the wafer in the plating tank, such as the United States. It is described in the patent US20060246690A1. This solution solves the problem that the back of the wafer may be contaminated by electrolyte. However, in this known scheme, bubbles generated during plating are easily blocked by the upper wafer, resulting in plating defects. For example, the metal ions moving upward toward the wafer after energization are slower than the buoyancy-driven bubbles due to the influence of gravity. After the bubbles are blocked by the wafer, they are easily filled into the grooves (holes) present on the wafer surface. Inside the holes in the metal plating. In order to overcome the above drawbacks, as described in Chinese Patent No. CN1272474C, it is known to evade air bubbles by tilting the wafer. However, after practice, it has been found that tilting the wafer sacrifices the uniformity of the thickness of the coating on the surface of the wafer and reduces the yield of the integrated circuit.

In the method and apparatus in which the front side of the wafer is horizontally upward, the anode terminal is placed directly above the wafer (cathode), and the metal ions to be plated are moved downward while electroplating, and the bubbles escape upward, which is good. The problem of bubble defects on the surface of the wafer is solved, as described in U.S. Patent No. 5,024,746. However, after practice, it is found that this scheme also has some defects.

Specifically, in known plating schemes, different processes (eg, electroplating of different metals, cleaning, etc.) are performed through different operating chambers, and some processes, such as cleaning processes, also need to be performed by additional means. For example, in the solution disclosed in the above-mentioned U.S. Patent No. 5,024,746 A, it is necessary to move the entire electroplating apparatus (along with the wafer) to the cleaning operation room for cleaning, and then separate the electroplating equipment for the electroplating process. This aspect is time consuming and labor intensive, and on the other hand increases the risk of re-oxidation of the wafer surface (usually the wafer after cleaning needs to be plated in 10 seconds, otherwise the surface of the wafer will be re-oxidized). Some electroplating equipment (for example, the apparatus described in U.S. Patent No. 2,060, 246, 690 A1) internally provides separate operating bins (tanks) for each process. Thus, in the electroplating process, the wafer itself needs to be frequently moved between different plating tanks or cleaning tanks by a robot arm or other rotating device, which increases the risk of physical damage or contamination of the wafer, especially for 300 mm. Larger diameter wafers (which are more fragile) are more risky. Moreover, due to the configuration of the robot arm and the plurality of operating bins, the known electroplating apparatus requires a relatively large space, a relatively large footprint, a complicated structure, and high manufacturing and maintenance costs.

Second, in the prior art, the same wafer plating equipment can only process wafers of a certain size. This is because the size of the wafer is different, the circuit complexity is different, and the amount of metal to be plated and the amount of metal to be deposited on the surface of the wafer surface are also different, so that the electromagnetic field required for electroplating is also different. Devices and methods known in the prior art fail to flexibly control the distribution of electromagnetic fields in electroplating, which tends to result in inconsistent thicknesses in the middle and the periphery of the wafer coating, thereby affecting the uniformity of the coating.

Again, the prior art also fails to adequately address the problem of diffusion layers on the cathode surface during electroplating. In the prior art, the diffusion layer has a thickness of up to 100 microns. The diffusion layer on the surface of the cathode causes electrochemical polarization on the one hand, which results in the need to consume more electrical energy, and also causes deterioration of the thickness deviation of the plating layer; on the other hand, it reduces the quality of the metal ion to the front side of the wafer. Mass transfer results in a decrease in the deposition efficiency of metal ions and uneven distribution.

Finally, in the cleaning process of the plating process, when the remaining metal (or other substance) in the previous process is cleaned, due to the influence of the inertial force, the front side of the wafer tends to have metal (impurities) remaining, and the residue and the metal of the next process. Mixing will reduce cleaning efficiency and affect coating quality.

Summary of the invention

The present invention is directed to solving the above problems in the prior art and provides an improved wafer plating apparatus and plating method.

In one aspect, the invention relates to a plating apparatus for a wafer. The electroplating apparatus includes a single operating chamber (also referred to as a "plating bin" or "plating tank") and a plurality of storage tanks for storing liquid, the plurality of storage tanks respectively leading to the single operating chamber via a conduit, and The stored liquid is supplied to the single operating chamber in a controlled manner, wherein the single operating chamber is configured to separately receive liquid from one or more storage tanks in a controlled manner and in a fixed position The wafer is held such that the wafer is plated in the single operating chamber.

In the present application, the expression "receiving liquid from one or more storage tanks separately" means that the operating compartment receives liquid from one or more, especially two, storage tanks and empties the liquids (After venting after using these liquids for operations such as electroplating, cleaning, etc.), the next operation of receiving liquid from one or more storage tanks is performed. The expression "maintained in a positionally fixed manner" means that the wafer is not displaced relative to the operating chamber during operation, specifically not relative to the wafer holder in the operating chamber, that is, the wafer is not in operation Will be moved or moved in or out of the operating bin, wherein the operation can be either a single operation, such as a cleaning or plating operation, or it can include two successive different operations, such as electroplating after cleaning. Operation or electroplating with two different metals.

The electroplating apparatus of the present invention integrates the different processes of wafer electroplating into one operation bin. Such a technical solution produces the following beneficial technical effects: First, in the electroplating process, the wafer itself does not need to move frequently between different processes, reducing the risk of physical damage of the wafer or the risk of contamination; secondly, the whole The electroplating equipment consists of only one operating chamber, while eliminating the need for auxiliary devices such as robots for moving wafers. The core structure of the device is simplified and miniaturized, the floor space is greatly reduced, and manufacturing and maintenance are directly reduced. Cost; finally, save the flow The processing time of the process switching.

The electroplating apparatus of the present invention includes the following advantageous technical features:

- a wafer holder for mounting the wafer is disposed in the operation chamber, and an anode terminal electrically connected to the anode of the power source is suspended above the wafer holder, and liquid from the storage tank is directed toward the crystal via the anode terminal Round support;

Providing a holding device for holding the anode terminal, the holding device being configured to enable the anode terminal to be accessible and away from the wafer holder to accommodate the complexity of the circuit layout to be formed on the wafer;

The retaining device is in the form of a length adjustable rod that is held at the end of the rod;

The anode terminal has an inner chamber and a mesh communicating with the inner chamber, the inner chamber being in communication with a conduit from the storage tank for receiving liquid in the storage tank;

- an elastic clamping device is provided in the operating chamber, the elastic clamping device being configured to fix the wafer on the wafer support by elastic force;

The elastic clamping means comprise a plurality of spring contacts arranged in a circular pattern and intended to abut against a surface of the wafer, in particular an upper surface, preferably comprising four spring contacts evenly spaced circumferentially, wherein Each spring contact is placed to be displaceable in a radial direction of the circumference to accommodate different wafer sizes, preferably each spring contact is placed on the retractable arm;

The spring contact is connected to the cathode of the power source to form a cathode terminal;

- the electroplating apparatus further comprises a vibration system that can be driven to vibrate the operating chamber;

- the electroplating apparatus further comprises a rotating system that can be driven to rotate the operating chamber, preferably the operating chamber is alternately rotated in a clockwise and counterclockwise direction;

The plurality of storage tanks comprise a storage tank for storing deionized water, a storage tank for storing detergent, and at least one storage tank for storing liquid containing ions of the plating metal.

In another aspect, the invention relates to a method of electroplating a wafer, the electroplating method comprising the following successive steps:

A. introducing the wafer into a single operation chamber and fixing it on the wafer holder, wherein the wafer is brought into contact with a cathode terminal connected to the cathode of the power source;

B. sequentially used in a storage tank for storing deionized water and a storage tank for storing detergent to communicate with the operation chamber to sequentially introduce deionized water and detergent into the operation chamber to thereby clean the wafer;

C. drain the deionized water and detergent in the operating chamber;

D. a storage tank for storing deionized water is in communication with the operating chamber to supply deionized water into the operating chamber and flood the wafer;

E. supplying the liquid in the storage tank for storing the liquid containing the ions of the plating metal to the anode terminal connected to the anode of the power source, and immersing the anode terminal in deionized water already present in the operation chamber to make the anode Forming an electrical path between the terminal and the cathode terminal such that ions of the plated metal are deposited on the surface of the wafer by electrochemical reaction;

F. draining the liquid mixture in the operating chamber;

G. introducing deionized water and detergent into the operating chamber again to clean the wafer, and then draining the deionized water and detergent in the operating chamber;

H. Repeat steps D through G if needed.

The electroplating method of the present invention may further comprise the following advantageous steps:

- adjusting the distance between the anode terminal and the wafer holder depending on the size of the wafer or according to the complexity of the circuit layout to be formed on the wafer;

- during the steps B, E, G, the operating chamber is oscillated by the vibration system;

- During the steps B, E, G, the operating chamber is rotated by means of a rotary system, preferably the operating chamber is alternately rotated in a clockwise and counterclockwise direction.

DRAWINGS

Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the drawing:

1 is a schematic structural view of a plating apparatus according to a preferred embodiment of the present invention;

Figure 2 shows the anode and cathode terminals of the electroplating apparatus of Figure 1;

Figure 3 illustrates a preferred embodiment of a resilient clamping device for a wafer;

Figure 4 is a plan view of Figure 3.

detailed description

The essence of the invention is that the different processes of wafer electroplating are integrated into one operation bin, and the liquids for each process, such as detergent or electroplating solution, are respectively from different storage tanks, and can be transported through pipes according to the process requirements. Into the operating chamber for cleaning of the wafer or formation of a conductive metal layer on the surface of the wafer. In particular, in the electroplating apparatus of the present invention, the plating solution may be formed by mixing liquid from a plurality of, in particular, two different storage tanks in an operation chamber. Specifically, the plating solution may be formed by mixing a deionized water from one storage tank and a liquid containing ions of a plating metal from another storage tank in an operation chamber. The deionized water may be purified water or distilled water, and may also be mixed with a cleaning agent in an operating chamber for cleaning of the wafer. The liquid containing the ions of the plated metal is especially a cation containing a plated metal. For example, the liquid can be an aqueous solution of a compound of a plated metal.

Referring to Figure 1, the electroplating apparatus of the present invention includes a single operating chamber 7 that connects a plurality of

different storage tanks

121, 122, 123, 124, 125, 126 through a conduit 10. These storage tanks are independent of each other, and may include a storage tank 121 for storing deionized water, a storage tank 122 for storing detergent, and a storage tank for storing various liquids containing ions of the plating metal, for example, a storage tank 123 for storing a liquid containing copper ions, a storage tank 124 for storing a liquid containing nickel ions, a storage tank 125 for storing a liquid containing tin ions, and for storing gold ions Liquid storage tank 126. Of course, the number and type of storage tanks of the present invention are not limited to the examples shown in FIG. 1 and described above, but may include more or fewer storage tanks, for example, may include multiples for storing different plating solutions. Or a storage tank for the electrolyte.

The various storage tanks 121 to 126 are configured to sequentially supply the liquids stored therein to the operating compartment 7 in a controlled manner. To this end, valves or switches 111, 112, 113, 114, 115, 116 may be placed near the outlets of the storage tanks 121-126 and on the pipes connected to them. These valves or switches 111 to 116 may be automatically opened or closed manually or manually by a control system (not shown) according to the process requirements, so as to be transported to the operating chamber 7 in order, respectively, and their stored needs are used. The liquid in the current process.

Accordingly, the operating compartment 7 is configured to receive separately from the storage tank 121 in a controlled manner Liquid in one or more storage tanks to 126. For example, the operating bin 7 may be configured to receive deionized water from the storage tank 121 and a cleaning agent from the storage tank 122, and clean the crystal held in the operating chamber 7 with the mixture of the deionized water and the cleaning agent. After the circle 3 and then the mixture of deionized water and detergent is emptied, the liquid from another set of one or more storage tanks is again received, for example, receiving deionized water from the storage tank 121 and from the storage tank 123. A liquid containing copper ions for depositing a copper layer on the surface of the wafer 3, as further explained below.

For this purpose, the operating compartment 7 is provided with a discharge device, for example a piston 9 placed in the through hole in the bottom of the operating compartment 7. The piston 9 can be removed from the bottom through hole and manually blocked from the bottom through hole under the control of the control system according to the process requirements, so as to evacuate the operating chamber 7 and retain liquid from different sets of storage tanks, Thereby, the operation of the operating compartment 7 to receive the liquid from the storage tank separately is achieved.

Still referring to FIG. 1 in conjunction with FIG. 2, in accordance with a preferred embodiment of the present invention, wafer 3 is held in positionally on wafer holder 8 of operating chamber 7 and is coupled to the cathode terminal of the power source for deionization Metal ions in a plating solution formed of water and a liquid containing ions of a plating metal are deposited on the surface of the wafer 3 to form a plating layer. An anode terminal 1 electrically connected to the anode of the power source is suspended above the wafer holder 8, and liquid from the storage tank enters the operation chamber 7 via the anode terminal 1, as shown by arrows A1, A2, and A3 in FIG. A4, A5 are shown.

To this end, the anode terminal 1 may be a member made of a non-conductive material having a lumen and a mesh communicating with the lumen. The inner chamber of the anode terminal 1 is in fluid connection with a pipe section 15 from a storage tank to receive liquid from the storage tank. Here, the pipe section 15 may be a pipe section shared by different storage tanks 121 to 126. That is, the different storage tanks 121 to 126 can sequentially supply the liquids stored therein to the operation chamber 7 via the same pipe section 15.

According to a particularly preferred embodiment of the invention, the electroplating apparatus comprises holding means for holding the anode terminal 1, the holding means being configured to enable the anode terminal 1 to be reciprocated vertically to approach or move away from the wafer for holding The wafer support 8 of 3 is, in particular, near or away from the cathode terminal associated with the wafer 3. The vertical reciprocating movement of the anode terminal 1 is shown by the double arrow B in FIG. Here, it should be noted that the anode terminal 1 and its holding device can be arranged to be in operation. It is independent of the operation bin 7. That is, the anode terminal 1 and its holding device do not move with the movement of the operating chamber 7 (described below).

Preferably, the holding means of the anode terminal 1 is formed by a length adjustable rod 4 which is held at the end of the rod 4 facing the wafer holder. Thus, the distance between the anode terminal 1 and the wafer 3 or the cathode terminal on the wafer holder 8 can be easily adjusted by changing the length of the rod 4. The rod 4 can be, for example, a telescopic rod or a rod that can be displaced vertically.

This embodiment makes it possible to achieve an on-demand adjustment of the distance between the anode and cathode. By adjusting the distance between the electrodes as needed, it is possible to control the electromagnetic field distribution in the operation chamber 7 covering the front side of the wafer (i.e., the surface of the wafer 3 on which the metal plating layer is to be deposited). This makes it possible to flexibly cope with different wafer sizes (diameters) and/or integrated circuit layout complexity, improve the thickness deviation of the plating on the front side of the wafer, and improve the uniformity of the plating. In particular, for a wafer having a large size or a relatively simple layout of the integrated circuit, the anode terminal 1 can be raised to be farther from the front side of the wafer; for a wafer having a small size or a relatively complicated layout of the integrated circuit, the anode terminal 1 can be made. Drop so that it is closer to the front of the wafer.

According to another particularly preferred embodiment of the invention, the electroplating apparatus comprises elastic clamping means for holding the wafer 3. The elastic clamping device may be disposed in the operating compartment 7 and configured to secure the wafer 3 to the wafer support 8 by elastic force.

As shown in FIGS. 2 and 4, the elastic clamping device may include a plurality of spring contacts 13 disposed along the circumferential direction of the wafer support 8 or wafer 3 and against the surface of the wafer 3, the wafer The surface is specifically the surface of the wafer on which the metal plating is to be formed, that is, the upper surface of the wafer or the front side of the wafer.

The plurality of spring contacts 13 are preferably arranged in a circular pattern. In particular, these spring contacts 13 may be evenly spaced along the circumferential direction of the wafer support 8 or wafer 3 and against the wafer edge of the wafer 3, such as the wafer's Its outermost edge extends radially toward its center by an annular area of 5 mm. In the embodiment illustrated in Figure 4, the resilient gripping means of the wafer includes four spring contacts 13 that are evenly spaced at 90[deg.] intervals.

Preferably, each spring contact 13 is placed to be displaceable in the radial direction of the wafer support 8 or wafer 3 to accommodate different wafer sizes. As shown in FIG. 3, each of the spring contacts 13 can be mounted on a retractable arm that can be elongated or shortened substantially in the radial direction of the wafer support 8 or wafer 3. Thus, the plurality of spring contacts 13 carried by the respective arms can define no The circumference of the same diameter accommodates the maintenance of wafers of different sizes, such as the retention of 18-inch wafer 3A, 12-inch wafer 3B, 8-inch wafer 3C or 6-inch wafer 3D as shown in FIG.

Additionally, as can be appreciated from Figure 2, each spring contact 13 can be electrically coupled to the cathode 14 of the power source to form a cathode terminal.

This embodiment achieves the ability to hold (stabilize) the wafer securely by connecting the wafer with flexible spring contacts, as well as connecting the cathode to wafers of different sizes (4, 6, 8, 12). , 18 inches). This allows the electroplating apparatus of the present invention to be used for electroplating of wafers of different sizes without changing any structure of the electroplating apparatus. In this way, the efficiency of the plating work can be significantly improved, the number of components required for the plating work can be reduced, and the production and maintenance costs of the entire plating equipment can be reduced.

According to a further preferred embodiment of the invention, the electroplating apparatus comprises a vibration system 6 which can be driven to vibrate or oscillate the operating chamber 7 together with the wafer 3 held on the wafer support 8. The vibration system 4 can be associated with the cathode 14 of the power source (see Figure 2).

According to a further preferred embodiment of the invention, the electroplating apparatus comprises a rotating system 5 which can be driven to rotate the operating bin 7 (along with the wafer 3 located therein). Preferably, the rotation system 5 can be configured to rotate the operating compartment 7 alternately in a clockwise and counterclockwise direction, as indicated by the double arrow C in FIG.

Thus, in the electroplating process, the vibrating system 6 and the rotating system 5 can be activated separately or simultaneously to vibrate or rotate the operating chamber 7 or to continue to vibrate while rotating. It has been found through practice that the effect of significantly reducing the metal diffusion layer on the surface of the wafer is produced. Specifically, the thickness of the diffusion layer of 100 micrometers under the prior art can be reduced to 20 micrometers. By reducing the diffusion layer at the cathode during the electroplating process, the electrochemical polarization phenomenon can be improved, thereby reducing the electrical energy consumption during the electroplating process and simultaneously improving the coating thickness deviation.

In addition, the electroplating apparatus of the above embodiment can enhance the mass transfer of metal ions in accordance with the gravitational influence of metal ions, so that metal ions can be deposited more efficiently into the grooves on the front side of the wafer. Moreover, the electroplating apparatus of the above embodiment can also improve the surface wetting of the front side of the wafer, improve the quality of metal deposition, and accelerate the escape of bubbles.

By rotating the rotating system 5 in an electroplating or cleaning process, the operating chamber 7 and the wafer 3 are alternately rotated at a high speed in a counterclockwise and clockwise direction, that is, by means of positive and negative forces. The vertical rotation of the warehouse 7 and the wafer 3 can improve the uniformity of the plating during the plating process, reduce the thickness deviation, and improve the efficiency of wafer cleaning or spin-drying and reduce cross-contamination.

The electroplating apparatus of the present invention as described above can be operated in the following successive steps:

A. The wafer 3 is introduced into a single operation chamber 7, and the wafer 3 is fixedly held on the wafer holder 8, where the wafer 3 is brought into contact with a cathode terminal connected to the cathode 14 of the power source. The cathode 14 has not yet formed an electrical path with the anode terminal 1;

B. By means of the control system, the storage tank 121 for storing deionized water and the storage tank 122 for storing the detergent are sequentially connected to the operation tank 7 automatically or manually by manual means to introduce deionized water and detergent successively. The operation chamber 7 is configured to perform a wafer cleaning process;

C. After the cleaning of the wafer 3 has been performed, the used deionized water and detergent in the operating chamber 7 are drained;

D. by means of the control system automatically or by manual use of the storage tank 121 for storing deionized water in communication with the operating chamber 7 to supply deionized water into the operating chamber 7;

E. One of the storage tanks 123 to 126 for storing the liquid containing the ions of the plating metal communicates with the inner cavity of the anode terminal 1 to use the metal ions in the liquid stored in the storage tank as the metal to be deposited Material 2 is supplied to the anode terminal 1, and the anode terminal 1 is immersed in deionized water already present in the operating chamber 7 to form an electrical path between the anode terminal 1 and the cathode 14, thereby causing metal ions in the liquid Deposited on the surface of the wafer 3;

F. after reaching the desired plating thickness on the surface of the wafer, draining the used liquid mixture in the operating chamber 7;

G. again, the

storage tanks

121 and 122 are communicated with the operation chamber 7 to deliver deionized water and detergent to the operation chamber 7, thereby cleaning the wafer 3 and discharging the already in the operation chamber 7 after performing the cleaning operation. Deionized water and detergent used; and

H. If necessary, repeat steps D to G, wherein in step E, another storage tank of the storage tanks 123 to 126 can be communicated with the operation tank 7 to supply another metal ion to the operation chamber 7, and A plating of the other metal is deposited on the wafer 3.

Preferably, in the above plating method, the anode terminal 1 can be adjusted according to the size of the wafer. The distance between the wafer supports 8.

Furthermore, preferably, the vibration system 6 and the rotation system 5 can be activated separately or simultaneously during the electroplating process, in particular during the above steps B, E, G, so that the operating chamber 7 together with the wafer 3 located therein Oscillating and / or rotating.

Taking the metal bump forming process in the wafer level package as an example, the processing process that can be implemented by the plating apparatus of the present invention may include the following steps:

A, the wafer 3 is placed on the wafer support 8 in the operating chamber 7;

B. The wafer 3 is firmly clamped by the spring contact 13 so that the wafer 3 is fixedly held on the wafer support 8;

C, the deionized water and the cleaning agent in the

storage tanks

121 and 122 are successively introduced into the operation chamber 7;

D, starting the vibration system 6;

E. Starting the rotation system 5 so that the wafer holder 8 carrying the wafer 3 is alternately rotated clockwise and counterclockwise while the operation chamber 7 is oscillating, thereby performing a wafer cleaning process with a duration of 90 seconds. Then stop rotating and oscillating, draining the used liquid in the operating chamber 7;

F. The deionized water and the liquid containing copper ions in the

storage tanks

121 and 123 are introduced into the operation chamber 7, the vibration system 6 and the rotation system 5 are started, and then the anode and the cathode are energized, wherein the current density is set to 12 A/dm ² The time of shaking, rotating and plating is continued for 35 minutes, at which time the average thickness of the copper film on the front side of the wafer is 30 μm; then the used liquid in the operating chamber 7 is drained;

G, the deionized water in the storage tank 121 is introduced into the operation chamber 7, repeating steps D, E;

H. The deionized water and the liquid containing nickel ions in the

storage tanks

121 and 124 are introduced into the operating chamber 7, the vibration system 6 and the rotating system 5 are started, and then the anode and the cathode are energized, wherein the current density is set to 5 A/dm. ² , the shaking, rotating and plating time lasts for 3 minutes, at which time the average thickness of the nickel film on the front side of the wafer is 2 microns; then the used liquid in the operating chamber 7 is drained;

I. Repeat step G;

J. The deionized water and the liquid containing tin ions in the

storage tanks

121 and 125 are introduced into the operation chamber 7, the vibration system 6 and the rotation system 5 are started, and then the anode and the cathode are energized, wherein the current density is set to 3 A/dm. ² , the shaking, rotating and plating time lasts for 9 minutes, at which time the average thickness of the tin film on the front side of the wafer is 10 micrometers; then the used liquid in the operating chamber 7 is drained;

K, removing the wafer 3 to which the plating has been applied to the stripping operation chamber, and performing a stripping step of the photoresist (not implemented in the plating apparatus of the present invention);

L, repeat steps A, B, G;

M. an etching process of the copper seed layer between the wafer etching operations (not implemented in the apparatus of the present invention);

N, repeat steps A, B, G;

O. performing an etching process of the tungsten-titanium seed layer between wafer etching operations (not implemented in the apparatus of the present invention);

P, repeat steps A, B, G;

Q. The vibrating system 6 and the rotating system 5 are started, and the wafer is rotated and dried for 4 minutes.

The above is only the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of changes or substitutions within the technical scope of the present invention, and should be covered in Within the scope of protection of the present invention. Therefore, the scope of the invention should be determined by the scope of the claims.

Claims

A wafer plating apparatus comprising a single operation chamber and a plurality of storage tanks for storing liquid, the plurality of storage tanks respectively leading to the single operation chamber via a pipe, and sequentially to the same in a controlled manner A single operating compartment supplies the stored liquid, wherein the single operating compartment is configured to separately receive liquid from one or more storage tanks in a controlled manner and to hold the wafer in a positionally fixed manner to cause the wafer A plating layer is applied in the single operating chamber.
The electroplating apparatus according to claim 1, wherein the operation chamber is provided with a wafer holder for mounting a wafer, and an anode terminal electrically connected to the anode of the power source is suspended above the wafer holder, Liquid from the storage tank is conveyed toward the wafer support via the anode terminal.
The plating apparatus according to claim 2, wherein a holding means for holding the anode terminal is provided, the holding means being configured to enable the anode terminal to approach and away from the wafer holder so as to be adapted to be formed in the crystal The complexity of the circuit layout on the circle.
The electroplating apparatus according to claim 3, wherein said holding means is in the form of a length adjustable rod held at the end of the rod.
The electroplating apparatus according to any one of claims 2 to 4, wherein the anode terminal has an inner cavity and a mesh communicating with the inner cavity, the inner cavity being in communication with a pipe from the storage tank for receiving and storing The liquid in the tank.
The plating apparatus according to any one of claims 2 to 5, characterized in that the operation chamber is provided with an elastic holding means configured to fix the wafer on the wafer holder by elastic force.
The electroplating apparatus according to claim 6, wherein said elastic gripping means comprises a plurality of spring contacts arranged in a circular pattern and intended to abut against a surface of the wafer, in particular an upper surface, preferably including a circumference Four spring contacts that are evenly spaced, wherein each spring contact is placed to be displaceable in the radial direction of the circle to accommodate different wafer sizes, preferably each spring contact is placed On the telescopic arm.
The plating apparatus according to claim 7, wherein said spring contact is connected to a cathode of a power source to form a cathode terminal.
The electroplating apparatus according to any one of claims 2 to 8, further comprising a vibration system that can be driven to vibrate the operation chamber.
A plating apparatus according to any one of the preceding claims, further comprising a rotating system that can be driven to rotate the operating compartment, preferably such that the operating compartment alternates in a clockwise and counterclockwise direction Turn.
The electroplating apparatus according to any one of the preceding claims, wherein the plurality of storage tanks comprise a storage tank for storing deionized water, a storage tank for storing a cleaning agent, and at least one for storing a plating layer Metal ionic liquid storage tank.
A method of plating a wafer, comprising the following successive steps:

A. introducing the wafer into a single operation chamber and fixing it on the wafer holder, wherein the wafer is brought into contact with a cathode terminal connected to the cathode of the power source;

B. sequentially used in a storage tank for storing deionized water and a storage tank for storing detergent to communicate with the operation chamber to sequentially introduce deionized water and detergent into the operation chamber to thereby clean the wafer;

C. drain the deionized water and detergent in the operating chamber;

D. a storage tank for storing deionized water is in communication with the operating chamber to supply deionized water into the operating chamber and flood the wafer;

E. supplying the liquid in the storage tank for storing the liquid containing the ions of the plating metal to the anode terminal connected to the anode of the power source, and immersing the anode terminal in deionized water already present in the operation chamber to make the anode Forming an electrical path between the terminal and the cathode terminal such that ions of the plated metal are deposited on the surface of the wafer by electrochemical reaction;

F. draining the liquid mixture in the operating chamber;

G. introducing deionized water and detergent into the operating chamber again to clean the wafer, and then draining the deionized water and detergent in the operating chamber;

H. Repeat steps D through G if needed.
The electroplating method according to claim 12, wherein the distance between the anode terminal and the wafer holder is adjusted according to the size of the wafer or according to the complexity of the circuit pattern to be formed on the wafer.
The electroplating method according to claim 11 or 12, characterized in that during the steps B, E, G, the operating chamber is oscillated by the vibration system.
The electroplating method according to any one of claims 11 to 14, characterized in that during the steps B, E, G, the operating chamber is rotated by means of a rotating system, preferably the operating chamber is alternately rotated in a clockwise and counterclockwise direction.