JP4509968B2 - Plating equipment - Google Patents

Description

  The present invention relates to a plating apparatus, and more particularly, to a plating apparatus for filling a wiring recess formed in a semiconductor substrate with a metal such as copper.

FIGS. 19A to 19C show a manufacturing example of this type of copper wiring board W in the order of steps. As shown in FIG. 19 (a), an insulating film 2 made of SiO ₂ is deposited on a conductive layer 1a on a semiconductor substrate 1 on which semiconductor devices are formed, wiring contact hole 3 by a lithographic etching technique The groove 4 is formed. A barrier layer 5 made of TiN or the like is formed thereon, and a seed layer 7 is formed thereon as a power feeding layer for electrolytic plating by sputtering, CVD, or the like.

  Then, by plating the surface of the substrate W with copper, as shown in FIG. 19B, the contact holes 3 and the grooves 4 of the semiconductor substrate 1 are filled with copper, and a copper layer is formed on the insulating film 2. 6 is deposited. Thereafter, the copper layer 6 on the insulating film 2 is removed by chemical mechanical polishing (CMP), and the surface of the copper layer 6 filled in the contact hole 3 and the wiring groove 4 and the surface of the insulating film 2 Are almost coplanar. As a result, a wiring made of the copper layer 6 is formed as shown in FIG.

In electrolytic copper plating for forming a copper layer, a copper sulfate plating solution containing copper sulfate and sulfuric acid in its composition is generally used as a plating solution. With the recent miniaturization of wiring, the shape of wiring grooves or plugs has become a high aspect ratio. However, in order to embed copper in a fine wiring pattern by electrolytic copper plating using a copper sulfate plating solution, a uniform current is required. It is necessary to realize a plating process with high adhesion and leveling properties. For this reason, adding a compound called an additive to the plating solution is generally performed. This additive serves to control the precipitation reaction rate locally to level out the precipitation of metal ions on the surface to be plated as a whole. Such additives include:
(1) a sulfur compound called a carrier that promotes the refinement of the precipitated particles by generating crystal nuclei everywhere on the plated surface;
(2) A polymer that improves the electrodeposition by increasing the overvoltage of copper deposition,
(3) Nitrogen compound called leveler, which enables flat plating by adsorbing to the convex part where plating is easy to grow, increasing overvoltage and delaying deposition of the convex part,
Is commonly used.

  In the management of the plating solution, generally, a predetermined amount of the plating solution component is replenished every certain processing time, and when this is repeated several times, the entire plating bath is replaced. Here, the additive contained in the plating solution is gradually consumed as the plating process proceeds due to the incorporation of the additive into the deposited metal film, oxidative decomposition at the anode, and the like. When the amount is large, it is necessary to frequently replace the entire plating bath. Therefore, in order to efficiently use the plating solution and reduce its running cost, it is required to suppress the consumption of the additive.

  In particular, in recent years, various production processes have been required to reduce the environmental burden as much as possible. In plating processes that are likely to generate high-concentration waste liquids, it is particularly expected that the life of the plating bath will be extended. ing. From this point of view, the trend of the times is to suppress the consumption of additives and use the plating solution without waste.

  Moreover, although the additive contained in the plating solution is very small, the effect is very remarkable, and if the concentration is not strictly controlled, the effect may be reversed. From this point of view, it is preferable to reduce the consumption of the additive and keep the additive concentration constant.

  The present invention has been made in view of the problems of the prior art as described above, and suppresses the amount of additive consumption and achieves a reduction in running cost and environmental burden at the same time by efficiently using a plating solution. An object of the present invention is to provide a plating apparatus capable of performing high-quality plating.

In order to solve such a problem in the prior art, one aspect of the present invention includes a plating tank that holds a plating solution, a substrate holding unit that holds a substrate connected to the cathode in at least the plating solution, In a plating apparatus comprising an anode disposed inside the plating tank, a high resistance element having an electric conductivity smaller than the electric conductivity of the plating solution, disposed between the substrate and the anode, and the high resistance A vibration device that vibrates the element, a sealing cover that seals the plating tank, and a decompression unit that decompresses a sealed space formed between the sealing cover and the plating solution in the plating tank .

  As a result, when a high resistance element is arranged between the substrate and the anode, even if bubbles enter the pores of the high resistance element, the bubbles can be expelled from the high resistance element. It is possible to prevent the bubbles that have entered the pores of the element from disturbing the current distribution due to the insulating action, and a uniform plating process can be performed over the entire substrate.

One aspect of the present invention includes a sealing cover enclosing the plating tank, the decompression means for decompressing the closed space formed between the plating solution the closed cover and the plating tank.

  According to the present invention, since the consumption amount of the additive contained in the plating solution can be suppressed, it is possible to efficiently use the plating solution and simultaneously reduce the running cost and the environmental load. Moreover, since the consumption amount of the additive contained in the plating solution is reduced, a change in the components contained in the plating solution can be suppressed, so that a higher quality plating process can be performed.

  Further, when a high resistance element is disposed between the substrate and the anode, even if a bubble enters the pores of the high resistance element, the bubble can be driven out of the high resistance element. It is possible to prevent bubbles that have entered the inside of the pores from disturbing the current distribution due to the insulating action, and a uniform plating process can be performed over the entire substrate.

An example of a fit Kki device with reference to FIGS. 1 to 15 will be described in detail. Incidentally, the plating apparatus is subjected to a copper plating on the surface of the semiconductor substrate, a plating apparatus for forming a wiring made of copper layer on the surface of the semiconductor substrate.

Figure 1 is a plan view showing a fit Kki device.
As shown in FIG. 1, the plating apparatus is disposed in a rectangular facility 10 and is configured to continuously perform copper plating on a semiconductor substrate. The facility 10 is partitioned into a plating space 12 and a clean space 13 by a partition wall 11, and each of the plating space 12 and the clean space 13 can be independently supplied and exhausted. The partition wall 11 is provided with an openable / closable shutter (not shown). Further, the pressure in the clean space 13 is lower than the atmospheric pressure and higher than the pressure in the plating space 12, so that the air in the clean space 13 does not flow out of the facility 10 and is plated. The air in the space 12 does not flow into the clean space 13.

  In the clean space 13, two cassette stages 15 for placing a substrate storage cassette, and two cleaning / drying devices 16 for cleaning (rinsing) and drying the plated substrate with pure water are arranged. ing. In the clean space 13, a fixed and rotatable first transfer device (four-axis robot) 17 for transferring a substrate is installed. As the cleaning / drying device 16, for example, a cleaning liquid supply nozzle that supplies ultrapure water to both the front and back surfaces of the substrate and that spins the substrate at high speed to dehydrate and dry is used.

  On the other hand, in the plating space 12, two pretreatment units 21 that perform pretreatment of substrate plating and invert the substrate after pretreatment by the reversing machine 20, and copper with the surface facing down on the surface of the substrate Four plating processing units 22 for performing plating processing and two first substrate stages 23a and 23b for placing and holding the substrate are arranged. In the plating space 12, a self-propelled and rotatable second transfer device (4-axis robot) 24 for transferring the substrate is installed.

In this example , two chemical solution cleaning devices 25 for cleaning the substrate after plating with a chemical solution are disposed in the clean space 13, and the second between the chemical solution cleaning device 25 and the cleaning / drying device 16 is provided. Substrate stages 26a and 26b are arranged. Between the two chemical solution cleaning devices 25, a fixed and rotatable third transfer device (4-axis robot) 27 for transferring the substrate is installed.

  The first transport device 17 transports the substrate between the cassette placed on the cassette stage 15, the cleaning / drying device 16, and the second substrate stages 26a and 26b, and the second transport device 24 is configured to transfer the first substrate stage 23a. , 23b, the substrate is transferred between the pretreatment unit 21 and the plating unit 22. The third transport device 27 transports the substrate among the first substrate stages 23a and 23b, the chemical solution cleaning device 25, and the second substrate stages 26a and 26b. The first substrate stage 23b and the second substrate stage 26b are configured to be able to wash the substrate with water, and are provided with a reversing machine 20 that reverses the substrate.

  FIG. 2 shows the flow of airflow in the facility 10. In the clean space 13, fresh external air is taken in from the pipe 30, and this external air is pushed into the clean space 13 through the high-performance filter 31 by the fan, and is washed and dried as downflow clean air from the ceiling 32 a. It is supplied around the device 16 and the chemical solution cleaning device 25. Most of the supplied clean air is returned from the floor 32b to the ceiling 32a through the circulation pipe 33, and is again pushed into the clean space 13 by the fan through the high-performance filter 31 and circulates in the clean space 13. A part of the airflow is exhausted to the outside through the pipe 34 from the cleaning / drying device 16 and the chemical solution cleaning device 25. Thereby, the inside of the clean space 13 is set to a pressure lower than the atmospheric pressure.

  The plating space 12 where the pretreatment unit 21 and the plating processing unit 22 exist is not a clean space (contamination zone), but particles are not allowed to adhere to the substrate surface. For this reason, it is possible to prevent particles from adhering to the substrate by flowing down-flow clean air taken from the pipe 35 into the plating space 12 by the fan from the ceiling 37a through the high-performance filter 36. . However, if the total flow rate of the clean air that forms the downflow depends on the supply and exhaust from the outside, a huge amount of supply and exhaust is required. For this reason, external exhaust is performed from the pipe 38 to the extent that the inside of the plating space 12 is maintained at a pressure lower than that of the clean space 13, and most of the downflow airflow is covered by the circulating airflow through the circulation pipe 39 extending from the floor 37b. ing.

  Thereby, the air returned from the circulation pipe 39 to the ceiling 37a side is pushed again by the fan, supplied through the high performance filter 36 as clean air into the plating space 12, and circulates. Here, air containing chemical mist and gas from the pretreatment unit 21, the plating unit 22, the second transport device 24, and the plating solution adjustment tank 40 is discharged to the outside through the pipe 38, and the inside of the plating space 12 is The pressure is set lower than that in the clean space 13.

  Here, the reversing machine 20 provided in the said pre-processing unit 21, the 1st substrate stage 23b, and the 2nd substrate stage 26b is shown in FIG.3 and FIG.4. As shown in FIGS. 3 and 4, the reversing machine 20 is opened and closed by a seal case 110 that rotates as a motor (not shown) is driven and a mechanism such as a link housed in the seal case 110. A pair of arc-shaped hands 111 and a chuck piece 113 that is rotatably supported by a stud 112 suspended from the hand 111 and grips a substrate are provided. A plane formed by the chuck piece 113 is disposed at a position offset from the axial center of the seal case 110 by an eccentric amount e.

  By configuring in this way, when the substrate is gripped and the hand 111 is reversed, the substrate can be simultaneously moved in the vertical direction by a distance 2e that is twice the eccentricity e. When providing an opening for penetrating the drive unit of the reversing machine 20 in the scattering prevention cover of the unit 21, this opening can be provided above the position of the substrate chuck of the pretreatment unit 21.

  By the way, a container 28 that accommodates a substrate for adjustment operation is provided below the first substrate stage 23 a in the facility 10. The second transport device 24 takes out the adjustment operation substrate from the container 28 and returns the adjustment operation substrate to the container 28 after the adjustment operation is completed. In this way, by providing the container 28 for accommodating the adjustment operation substrate inside the facility 10, it is possible to prevent contamination and a decrease in throughput due to the introduction of the adjustment operation substrate from the outside during the adjustment operation. it can.

  The placement position of the container 28 may be any position in the equipment 10 as long as it can be taken out and stored by any of the transfer devices, but is placed in the vicinity of the first substrate stage 23a. Then, the adjustment operation using the substrate for adjustment operation can be accommodated in the container 28 after being washed and dried, starting from pretreatment to plating treatment.

In this example , the first transport device 17 has two drop-type hands, the upper hand is a dry hand and the lower hand is a wet hand, while the second transport is used. The device 24 and the third transport device 27 have two drop-type hands and the upper and lower hands are wet hands. However, the present invention is not limited to this.

In this example , an example in which a chemical solution cleaning device 25 for cleaning the surface of the substrate with a chemical solution such as dilute hydrofluoric acid or hydrogen peroxide solution is provided will be described. When it is not necessary to clean, the chemical solution cleaning device 25 may be omitted. In this case, if the first transfer device 17 transfers the cassette placed on the cassette stage 15, the cleaning / drying device 16, and the first substrate stages 23 a and 23 b, the third transfer device 27 and the third transfer device 27. The two substrate stages 26a and 26b can be omitted.

Next, an outline of the flow of the substrate in this example will be described.
First, the substrate is stored in the cassette with the surface (element formation surface, processing surface) facing upward, and is placed on the cassette stage 15. Then, the first transport device 17 takes out the substrate from the cassette, moves onto the second substrate stage 26a, and places the substrate on the second substrate stage 26a. Next, the third transfer device 27 receives the substrate on the second substrate stage 26a and moves it to the first substrate stage 23a. Further, the second transport device 24 receives the substrate from the first substrate stage 23 a and passes it to the pretreatment unit 21. After completion of the pretreatment in the pretreatment unit 21, the substrate is reversed by the reversing machine 20 so that the surface of the substrate faces downward, and is transferred to the second transfer device 24 again. Then, the second transport device 24 passes the substrate to the head portion of the plating unit 22.

  After the substrate is plated and liquid is removed by the plating unit 22, the substrate is transferred to the second transfer device 24, and the second transfer device 24 transfers the substrate to the first substrate stage 23b. The substrate is reversed by the reversing machine 20 of the first substrate stage 23 b so that the surface faces upward, and is transferred to the chemical solution cleaning device 25 by the third transport device 27. The substrate that has been subjected to the chemical cleaning, pure water rinsing, and spin liquid cutting in the chemical cleaning device 25 is transported to the second substrate stage 26b by the third transport device 27. Next, the first transport device 17 receives the substrate from the second substrate stage 26b, transfers the substrate to the cleaning / drying device 16, and rinses and spin-drys with pure water (including deionized water) in the cleaning / drying device 16. I do. The dried substrate is stored in a cassette placed on the cassette stage 15 by the first transport device 17.

Next, the plating unit 22 arranged in the facility 10 will be described in more detail.
FIG. 5 is a diagram showing a main part of the plating unit 22. As shown in FIG. 5, the plating unit 22 has a substantially cylindrical shape and a plating tank 46 that contains a plating solution 45 therein, and a head portion 47 that is disposed inside the plating tank 46 and holds a substrate. Consists mainly of. FIG. 5 shows a state during the plating process in which the head portion 47 holding the substrate W is lowered.

  As shown in FIG. 5, the plating tank 46 is opened upward, and a plating chamber 49 in which an anode 48 made of, for example, phosphorous copper is disposed at the bottom, and a plating solution 45 containing a plating solution 45 in the plating chamber 49. A tank 50 is provided. The anode 48 is connected to the anode of the plating power source in the external control unit. The anode 48 is made of, for example, copper containing 0.03 to 0.05% phosphorus (phosphorous copper) because the surface of the anode 48 is a black film called a black film as the plating proceeds. This is to form a film, and this black film suppresses the formation of slime.

  As shown in FIG. 5, the anode 48 is integrally held by an anode holder 52, and this anode holder 52 is detachably attached to the plating tank 50, that is, is detachable through a handle 51. Has been. In addition, a sealing material 200 that prevents leakage of the plating solution to the outside is interposed between the surface of the plating tank 50 and the back surface of the flange portion 52 a of the anode holder 52. In this manner, by holding the anode 48 integrally with the anode holder 52 that is detachably attached to the plating tank 50, the anode 48 can be easily attached to and detached from the plating tank 50 via the anode holder 52. Thus, convenience such as maintenance and replacement can be achieved.

FIG. 6 is a plan view of the plating tank 46 of FIG. As shown in FIGS. 5 and 6, a plating solution ejection nozzle (plating solution supply means) 53 protruding horizontally toward the center of the plating chamber 49 is provided along the circumferential direction on the inner peripheral wall of the plating tank 50. The plating solution jet nozzles 53 are arranged at intervals, and communicate with a plating solution supply path 54 that extends vertically inside the plating tank 50. In this example , an arc-shaped plating solution reservoir 202 divided into four pieces along the circumferential direction is provided inside the peripheral wall of the plating tank 50 as shown in FIG. Two plating solution jet nozzles 53 are provided at both ends of each plating solution reservoir 202 in the longitudinal direction, and each plating solution reservoir 202 communicates with the plating solution supply path 54 at the center position in the longitudinal direction. ing.

  Further, the plating tank 50 overflows the first plating solution discharge port 57 through which the plating solution 45 in the plating chamber 49 is drawn from the peripheral edge of the bottom of the plating chamber 49 and the weir member 58 provided at the upper end portion of the plating tank 50. A second plating solution discharge port 59 for discharging the plating solution 45 is provided. The first plating solution discharge port 57 has a circular shape with a size of, for example, about φ16 to 20 mm, and a plurality (16 in FIG. 6) are provided at equal pitches along the circumferential direction. Further, the second plating solution discharge port 59 has, for example, a shape extending in an arc shape with a central angle of about 25 °, and three are provided in FIG.

FIG. 7 is a plating solution flow chart showing the state of the plating solution flow in the plating apparatus of this example . The plating solution supply path 54 and the plating solution adjustment tank 40 are connected by a plating solution supply pipe 55, and a control valve 56 for adjusting the pressure on the secondary side is interposed in the middle of the plating solution supply pipe 55. A predetermined flow rate of the plating solution is supplied to the plating solution reservoir 202 through the control valve 56, and a predetermined flow rate of the plating solution is ejected into the plating chamber 49 from the plating solution ejection nozzle 53 as a plating solution supply means.

  The first plating solution discharge port 57 is connected to the reservoir 226 via a plating solution discharge pipe 60a, and a flow rate regulator 61a is interposed in the middle of the plating solution discharge pipe 60a. On the other hand, the second plating solution discharge port 59 is connected to the reservoir 226 via a plating solution discharge pipe 60b, and a flow rate regulator 61b (not shown in FIG. 7) is interposed in the middle. The flow rate regulator 61b can be omitted.

  The plating solution 45 ejected from the plating solution ejection nozzle 53 is discharged to the reservoir 226 from both or one of the first plating solution discharge port 57 and the second plating solution discharge port 59. It is designed to be kept quantitative. The plating solution that has entered the reservoir 226 enters the plating solution adjustment tank 40 from the reservoir 226 by the pump 228, and the plating solution adjustment tank 40 adjusts the temperature of the plating solution and measures and adjusts the concentrations of various components. Thereafter, as the pump 234 is driven, the plating solution is supplied from the plating solution adjustment tank 40 through the filter 236 to the plating solution ejection nozzle 53 of each plating processing unit 22. The plating solution adjustment tank 40 is provided with a temperature controller 230 and a plating solution analysis unit 232 for taking out and analyzing the sample solution.

  As shown in FIG. 6, a horizontal hole 204 extending in the horizontal direction is provided at a predetermined position along the height direction near the bottom of the plating chamber 49, and the tip (lower end) reaches the horizontal hole 204 on the side wall. A liquid level detection sensor 206 is provided for detecting that the liquid level of the plating solution 45 has dropped from the formation position of the horizontal hole 204. For example, the liquid level detection sensor 206 has a tip portion made of Teflon (registered trademark), and when the tip portion is in the air, the difference in refractive index between Teflon (registered trademark) and air becomes large, and light is emitted. Total reflection returns to the original direction (light receiving part), and when the tip is in the liquid, the difference in refractive index between Teflon (registered trademark) and the liquid becomes small, so that most of the light is emitted into the liquid The presence / absence of liquid is detected by utilizing the characteristic of not returning to the direction (light receiving portion). Accordingly, it is constantly monitored whether or not the plating solution 45 is above the lowest liquid level, and when the plating solution 45 falls below the lowest liquid level, the flow rate regulator 61a in the middle of the plating solution discharge pipe 60a. This is dealt with by narrowing down.

  By the way, in the vicinity of the inner peripheral surface of the plating chamber 49, the outer peripheral end is fixed to the plating tank 50 and the vertical rectifying ring 62 that blocks the outward flow of the plating solution 45 in the plating chamber 49 in the horizontal direction. A horizontal rectifying ring 63 is provided. The vertical rectifying ring 62 is connected to the inner peripheral end of the horizontal rectifying ring 63.

  The plating solution ejected horizontally from the plating solution ejection nozzle 53 toward the central portion of the plating chamber 49 collides with the central portion of the plating chamber 49, and flows vertically. Then, the upward flow pushes up the central portion of the liquid surface of the plating solution 45 inside the vertical rectifying ring 62 when there is no substrate, and from the central portion of the substrate when the substrate descends and comes into contact with the liquid. It works in contact with the fluid and forces the bubbles to the outside. On the other hand, the downward flow changes to a horizontal flow from the center of the anode 48 to the outer periphery, and the peeled fine particles of the black film formed on the surface of the anode 48 are washed away from the outer periphery of the anode 48 to the horizontal rectifying ring 63. , And flows to the first plating solution discharge port 57, so that the peeled pieces of the black film approach and adhere to the processing surface of the substrate can be reduced.

Here, in electrolytic plating, the current density in the plating solution dominates the film thickness of the plating film, and in order to make the film thickness uniform, it is necessary to make the current density distribution in the plating solution more uniform. is there. In this example , since there is an electrical contact in the peripheral part of the substrate as described below, the current density of the plating solution located in the peripheral part of the substrate tends to increase, but in this vicinity, the vertical direction The vertical rectifying ring 62 extending in the horizontal direction and the horizontal rectifying ring 63 extending horizontally outward in the lower part of the vertical rectifying ring 62 are arranged to cut off the current, thereby reducing the current wraparound and reducing the local current. Thus, the current density distribution in the plating solution can be made more uniform, and the plating film at the peripheral edge of the substrate can be prevented from becoming thicker. In this example , the current is interrupted by the vertical rectifying ring and the horizontal rectifying ring to reduce the current wraparound, but the present invention is not limited to this.

  FIG. 8 is a partially enlarged view of the head portion 47 of the plating unit 22. As shown in FIGS. 5 and 8, the head portion 47 of the plating processing unit 22 includes a rotatable hollow cylindrical housing 70 and a disk-like shape that rotates integrally with the housing 70 while holding the substrate W on the lower surface. And a substrate table 71. A ring-shaped substrate holding portion 72 that protrudes inward is provided at the lower end of the housing 70, and a tapered surface that serves as a guide for the substrate W is formed on a part of the inner peripheral surface of the substrate holding portion 72. ing. The peripheral portion of the substrate W is sandwiched between the substrate holder 72 and the substrate table 71 which is a substrate holder, and the substrate W is held. Note that openings 96 for inserting or removing the substrate W and the robot hand into or out of the housing are provided on both sides of the cylindrical surface of the housing 70.

  Further, as shown in FIG. 8, a ring-shaped lower sealing material 73 extending inward is attached to the substrate holding portion 72. The tip of the upper surface of the lower sealing material 73 protrudes upward in a spire shape. On the other hand, an upper sealing material 74 is attached to the peripheral edge of the lower surface of the substrate table 71, and a part of the upper seal 74 protrudes downward from the lower surface of the substrate table 71 in a spire shape. With such a configuration, when the substrate W is held, the lower surface of the substrate W and the lower sealing material 73 are in pressure contact with the upper surface of the substrate W and the upper sealing material 74, respectively, so that these contact portions are reliably sealed. It has become.

  Further, the substrate holding portion 72 is provided with 80 air vent holes 75 extending outward in the horizontal direction and further inclined upward and extending outwardly at equal intervals along the circumferential direction. The air vent hole 75 is provided at a position where about half of the outer peripheral opening end is exposed to the outside from the surface of the plating solution 45 in the plating chamber 49 when the head portion 47 is in the plating position. Accordingly, when the above-described flow of the plating solution 45 in the plating chamber 49 is in contact with the substrate W and functions to push the bubbles from the central portion of the substrate W to the outside, the bubbles on this flow However, these air vent holes 75 are sequentially discharged outward so that no bubbles remain between the substrate W and the plating solution 45.

  Note that the inclination angle θ of the air vent hole 75 is set to 30 °, for example, and the air vent hole 75 is preferably inclined upward by 20 ° or more and particularly preferably about 30 °. In consideration of air escape, the diameter of the air vent hole 75 is 2 mm or more and 5 mm or less, preferably about 3 mm. Further, the air vent hole may be branched into two in the middle, one of which is opened near the liquid level, and the other is opened at a position completely above the liquid level. Furthermore, the air vent hole can be formed in an arbitrary shape such as a straight line or branched in two directions from the middle along the outer side. It has been confirmed that air can be vented in a short time when the distance S between the lower surface of the substrate W when the substrate W is held and the upper end of the air vent hole 75 is about 1.5 mm or less.

  As shown in FIG. 8, a leaf spring-like cathode electrode contact 76 that is energized with the substrate W when the substrate W is held is disposed on the substrate holding portion 72 of the housing 70, and on the outside of the substrate table 71. A power supply contact (probe) 77 that feeds power to the cathode electrode contact 76 when the substrate table 71 is lowered is suspended downward. The contact of the cathode electrode contact 76 and the power supply contact 77 to the plating solution 45 is prevented by the sealing of the substrate W and the lower sealing material 73 of the substrate holding portion 72.

In this example , as shown in FIG. 9, a cathode electrode plate 208 divided into six in the circumferential direction is provided, and each of the cathode electrode plates 208 has 15 cathode electrode contacts 76 extending inwardly. Is provided. Each cathode electrode plate 208 is individually supplied with power from each power supply contact 77, whereby the voltage distribution can be made more uniform.

  FIG. 10 is a plan view of the head portion 47, and FIG. 11 is a front view of the head portion 47. The head portion 47 has a base 83 attached to a slider 82 that moves up and down along a rail 81 fixed to a fixed frame 80 via, for example, a ball screw, and the housing 70 is rotatably supported on the base 83. Has been. On the other hand, the substrate table 71 is connected to the lower end of a table shaft 84 that extends concentrically through the inside of the shaft portion of the housing 70. The table shaft 84 is configured to be non-rotatable via the spline portion 85, that is, the housing 70 and the table shaft 84 rotate together and relatively move up and down.

  A servo motor 86 is attached to the base 83, and a timing belt 89 is stretched between a drive pulley 87 of the servo motor 86 and a driven pulley 88 fixed to the shaft portion of the housing 70. Accordingly, as the servo motor 86 is driven to rotate, the members indicated by the solid lines in FIG. 12, that is, the housing 70, the table shaft 84, and the substrate table 71 rotate together while holding the substrate W. Yes.

  A bracket 90 is vertically attached to the base 83, and an air-driven actuator 91 is attached to the bracket 90. On the other hand, a connector 95 is connected to the upper side of the table shaft 84, and the connector 95, the actuator 91 and the actuator slider 93 move up and down relatively. As a result, the members (excluding the actuator) indicated by the solid line in FIG. 13, that is, the table shaft 84 and the substrate table 71 are moved up and down.

  In order to prevent wear of the rotary joint 94 due to high-speed rotation, an actuator 97 and an actuator slider 98 are provided to disconnect the rotary joint 94 from the connector 92 during high-speed rotation for draining liquid that does not require energization. The power supply contact 77 provided on the substrate table 71 passes through the table shaft 84 and is connected to the cathode of the plating power source via the rotary joint 94.

  In the outer peripheral portion of the substrate table 71, chuck mechanisms 100 for holding the substrate W on the lower surface of the substrate table 71 are provided at three locations in the circumferential direction in this example. The chuck mechanism 100 has a bell crank-shaped hook 101. As shown in FIGS. 14 and 15, the hook 101 is rotatably supported at the center through a pin 102. The hook 101 extends inwardly above the pin 102 and the upper surface of the substrate table 71. A compression coil spring 103 is interposed therebetween and is biased in the closing direction. Thus, normally, the claw 104 provided at the lower end of the hook 101 enters the lower side of the substrate W by the urging force of the coil spring 103 to hold the substrate W.

  On the other hand, as shown in FIG. 14, a pusher 106 that moves up and down with the operation of the air cylinder 105 is attached to the base 83 and disposed above the lever portion 101 a of the hook 101. Thus, when the substrate table 71 is raised, the pusher 106 is lowered, and the hook 101 is rotated in the opening direction against the urging force of the compression coil spring 103, thereby releasing the holding of the substrate W. ing. An opening 107 is provided at a position facing the pusher 106 of the housing 70 so as not to hinder the vertical movement of the pusher 106.

  Here, the hook 101 is for holding the substrate W on the lower surface of the substrate table 71 when the substrate table 71 is located at the upper portion. The substrate table 71 is lowered and the upper sealing material 74 of the substrate table 71 is moved. When the substrate is sandwiched and held by the lower sealing material 73 of the housing 70, the hook 101 is separated from the substrate W by contacting the substrate table 71, so that a minute gap is generated between the substrates W. Is adjusted so as not to be held by the hook 101.

Next, a series of plating processes by the plating apparatus configured as described above will be described in detail.
The substrate is stored in a cassette with the surface (element formation surface, processing surface) facing upward and is placed on a cassette stage 15 in the facility 10. Then, the first transfer device 17 inserts the hand into the cassette, holds the surface of the substrate with the drop-type hand, takes out one substrate from the cassette, rotates and rotates the substrate onto the second substrate stage 26a. Is placed. Next, the third transfer device 27 holds the substrate on the second substrate stage 26a from below by the drop-type hand and rotates to place the substrate on the first substrate stage 23a.

  The second transfer device 24 is self-propelled to the vicinity of the first substrate stage 23a, holds the substrate on the top from below with a drop-type hand, rotates toward the pretreatment unit 21, and moves to the pretreatment unit 21. The substrate is transferred to the substrate chuck of the pre-processing unit 21 through a substrate insertion / removal slit provided in the anti-scattering cover.

The substrate chuck of the pretreatment unit 21 holds the substrate by opening the fingers to position the substrate between the fingers and closing the fingers. Next, the pretreatment liquid nozzle that has been waiting at a position that does not interfere with the movement of the hand 111 of the reversing machine 20 is moved to the upper part near the center of the substrate, and the substrate chuck holding the substrate is moved at a medium speed (for example, The pretreatment liquid is allowed to flow from the pretreatment liquid nozzle on the upper part of the substrate while rotating at about 300 min ⁻¹ ), and the rotation speed is increased when the liquid spreads quickly over the entire surface of the substrate, so that extra pretreatment liquid on the substrate Remove the liquid with centrifugal force.

  After the draining of the substrate is completed and the substrate chuck is stopped, the hand 111 of the reversing machine 20 is lowered, the substrate is grasped by the hand 111, the finger of the substrate chuck of the pretreatment unit 21 is opened, and the substrate is reversed. 20 Even if the reversing machine 20 is reversed, the hand 111 of the reversing machine 20 rises to a position where it does not hit the substrate chuck, rotates 180 degrees around the horizontal reversing axis, and turns the substrate surface downward. The reversing machine 20 descends to a position where the substrate can be transferred to the second transfer device 24 and stops.

  The hand 111 of the reversing machine 20 is below the reversal axis when receiving the substrate from the third transport device 27 and when receiving the substrate from the substrate chuck after the pre-processing, but the hand 111 is centered on the reversal axis. When the substrate is transferred to the second transport device 24 after being reversed, the substrate is positioned above the reversing shaft.

  The second transfer device 24 inserts a drop-type hand into the scattering prevention cover through the slit, and only the outer peripheral edge portion of the substrate immediately below the substrate held by the hand 111 of the reversing machine 20 is the hand. The hand is placed in contact with the substrate, the hand 111 of the reversing machine 20 opens the substrate, and holds the substrate with the substrate surface down. The second transfer device 24 takes out the substrate from the pretreatment unit 21 and self-runs up to the front of one predetermined plating unit 22.

  The housing 70 and the substrate table 71 of the plating processing unit 22 are raised to the substrate attachment / detachment position by the raising of the base 83, and the substrate table 71 is further lifted to the upper end of the housing 70 by the actuator 91 to operate the air cylinder 105. The pusher 106 is pushed down, and the three hooks 101 on the outer periphery of the substrate table 71 are released.

  The second transport device 24 inserts the hand and the substrate into the inside through the opening 96 of the housing 70, and lifts the hand to a position immediately below the substrate table 71. In this state, the pusher 106 is raised, and the hook 101 is closed by the urging force of the compression coil spring 103 between the lever portion 101a of the hook 101 and the upper surface of the substrate table 71 to hold the substrate. After the substrate is held by the hook 101, the hand of the second transport device 24 is slightly lowered and pulled out from the opening 96 of the housing 70.

  Next, the substrate table 71 is lowered by the actuator 91, the substrate is centered at the tapered portion inside the substrate holding portion 72 of the housing 70, and placed on the lower sealing material 73 of the substrate holding portion 72, Further, the substrate is pressed against the upper sealing material 74 near the outer periphery of the substrate table 71 to seal the plating solution from entering the electrode contact side. At the same time, the substrate table 71 is lowered and the power supply contact 77 is pressed against the cathode electrode contact 76 to obtain reliable contact.

  Here, the hook 101 holds the substrate in such a manner that the substrate is placed on the hook 101 with a very small gap, and when the substrate table 71 is lifted from the housing 70, there is no backlash due to the upper sealing material 74. However, when the substrate table 71 is lowered and sealed with the lower sealing material 73 and the upper sealing material 74, the upper sealing material 74 is recessed so that the substrate is stably held. The substrate is stopped by the table 71 and slightly separated from the substrate W, and the substrate is not held. Accordingly, the substrate is held evenly by the lower sealing material 73 and the upper sealing material 74 without being affected by the three hooks 101.

In this state, when the plating solution is ejected from the plating solution ejection nozzle 53 of the plating treatment tank 46, the central portion of the liquid surface is raised. At the same time, the servo motor 86 is rotated to lower the base 83 via a ball screw or the like while rotating the housing 70, the substrate W, and the substrate table 71 at a medium speed (for example, 150 min ⁻¹ ). This rotational speed is preferably about 100 to 250 min ^{−1 in} consideration of the following air venting. Then, after the center of the substrate comes into contact with the liquid surface of the plating solution 45, the contact area with the raised liquid surface gradually increases and the liquid is filled up to the periphery. Since the lower sealing material 73 protrudes from the substrate surface around the lower surface of the substrate, air tends to remain. However, by rotating the housing 70 to remove the plating solution containing bubbles from the air vent hole 75 to the outside, Remove bubbles. Thereby, bubbles on the substrate surface are completely removed, and uniform processing is possible. The predetermined position for plating the substrate is set at a position where the substrate is immersed in the plating solution 45 in the plating chamber 49 and the plating solution does not enter from the opening 96 of the housing 70.

When the substrate is lowered to a predetermined position, the housing 70 is rotated at a medium speed for several seconds to remove air, and then the rotational speed is reduced to a low speed rotation (for example, 100 min ⁻¹ ). Electroplating is performed by passing a plating current with the treated surface as the cathode. This rotational speed is, for example, in the range of ⁰ to 225 min ⁻¹ . During the plating process, the plating solution is continuously supplied from the plating solution ejection nozzle 53 at a predetermined flow rate, discharged from the first plating solution discharge port 57 and the second plating solution discharge port 59, and passed through the plating solution adjustment tank 40. Circulate. Since the plating film thickness is determined by the current density and the energization time, the energization time (plating time) corresponding to the desired amount of deposition is set.

  The plating time is, for example, 120 to 150 seconds. For example, a plating process is performed for about 40 seconds with a current of about 1 A, and then, for example, a plating process is performed with a current of about 7.4 A, for example. A plating film can be obtained.

In the plating solution used in this example , for example , a component containing sulfur such as thiourea or acrylthiourea as a carrier, a component composed of polyether, polyethylene glycol, or a derivative thereof as a polymer, or polyamine as a leveler Such a nitrogen compound having a positive charge is contained as an additive. By including such an additive in the plating solution, plating with high uniform electrodeposition and leveling properties is realized.

  Here, at the time of plating, the plating solution is supplied at a flow rate of about 5 to 30 l / min. When the plating process is not performed, the plating solution ejection nozzle 53 is supplied at a flow rate of about 1 to 15 l / min. Supply from. That is, the supply amount of the plating solution at the time of non-plating is made smaller than the supply amount of the plating solution at the time of plating. In the process of plating the substrate, the additive contained in the plating solution in the plating space composed of the substrate and the anode is subjected to the plating process by incorporating the additive into the deposited metal film and oxidative decomposition at the anode. In this way, the consumption of the additive contained in the plating solution is reduced by making the supply amount of the plating solution during non-plating smaller than the supply amount of the plating solution during plating. can do. The experiment was conducted with the plating solution supply rate being 15 l / min during plating and 5 l / min during non-plating. When the plating solution supply rate was 15 l / min during both plating and non-plating, The additive consumption was reduced to 65% of the consumption.

After the energization is completed, the base 83 is raised, and the housing 70, the substrate W, and the substrate table 71 are positioned above the level of the plating solution 45 in the plating chamber 49 and below the upper end of the processing tank cover. And the plating solution is drained by centrifugal force by rotating at a high speed (for example, 500 to 800 min ⁻¹ ). After the liquid draining is completed, the rotation of the housing 70 is stopped so as to be directed in a predetermined direction, the base 83 is raised, and the housing 70 is raised to the attachment / detachment position of the substrate. After the housing 70 has been raised to the substrate attachment / detachment position, the substrate table 71 is further raised to the substrate attachment / detachment position by the actuator 91.

  Next, the hand of the second transport device 24 is inserted into the inside through the opening 96 of the housing 70 and is raised to a position for receiving the substrate. Then, the pusher 106 is lowered and the lever 101a of the hook 101 is pushed to release the hook 101, and the substrate held by the hook 101 is dropped into the hand dropping hand. In this state, the hand is slightly lowered, and the hand and the substrate held by the hand are taken out from the opening of the housing 70. The substrate is held so that only the edge portion of the substrate is in contact with the hand, with the surface of the substrate facing down, as in the case of mounting by the hand.

  The substrate held by the second transport device 24 is transferred to the reversing machine 20 of the first substrate stage 23b while facing down on the surface of the substrate. The reversing machine 20 grips the outer periphery of the substrate with the two hands 111 and supplies ultrapure water to both the front and back surfaces of the substrate for rinsing. Then, the substrate is rotated 180 degrees around the horizontal inversion axis so that the surface faces upward. Next, the 3rd conveyance apparatus 27 hold | maintains the board | substrate mounted in the inversion machine 20 of the 1st board | substrate stage 23b with a hand, and transfers to the chemical | medical solution washing | cleaning apparatus 25. FIG.

  In the chemical solution cleaning apparatus 25, the substrate is held by six fingers, the surface thereof is rotated upward, and the front surface, the edge, and the back surface of the substrate are respectively cleaned with a chemical cleaning solution. When the chemical cleaning is completed, rinsing is performed with ultrapure water, and then the substrate held by the fingers is rotated at high speed to drain the substrate.

  When the liquid draining is completed, the substrate is taken out with the hand of the third transfer device 27 facing up, and placed on the second substrate stage 26b. In the second substrate stage 26b, the substrate is further rinsed with ultrapure water.

  Next, the first transport device 17 receives the substrate held on the second substrate stage 26 b by hand, and transfers the substrate to the cleaning / drying device 16. The cleaning / drying device 16 cleans the front and back surfaces of the substrate with ultrapure water (including deionized water), and dries and dries it by high-speed rotation. Then, the substrate is held by the hand of the first transfer device 17 with the surface facing upward, and the substrate is stored in a predetermined position of the cassette of the cassette stage 15.

Next, the implementation form of the plating apparatus according to the present invention with reference to FIG. 16 will be described in detail. Incidentally, the same reference numerals are assigned to members or elements having a member or element of the same effects or functions in the above plating apparatus is the same as the above plating apparatus for parts not specifically described.

FIG. 16 is a diagram schematically showing a plating apparatus in the present embodiment.
As shown in FIG. 16, a plating apparatus 300 according to this embodiment holds a cylindrical plating tank 302 that opens upward and holds a plating solution 45 therein, and a substrate W such as a semiconductor wafer so as to be detachable downward. And a vertically movable head portion 306 having a substrate table 304. The upper part of the plating tank 302 is covered with a hermetic cover 308, thereby forming a sealed space 310 above the plating solution 45. The sealed space 310 is connected to a vacuum pump 314 as a pressure reducing means via an exhaust path 312 attached to the sealed cover 308, and the inside of the sealed space 310 can be decompressed by driving the vacuum pump 314. It has become.

  In the plating solution 45 held inside the plating tank 302, a flat plate-like anode body 320 arranged horizontally is immersed. The anode body 320 includes an anode 322 made of, for example, phosphorous copper, and a high resistance element 324 that covers the periphery of the anode 322. Further, for example, a vibration device 316 that performs ultrasonic vibration is attached to the outer wall surface of the plating tank 302, and this vibration device 316 is disposed at a position substantially the same height as the anode body 320. A conductive layer is formed on the lower surface (plated surface) of the substrate W, and this conductive layer has a contact point with the cathode electrode on the peripheral edge thereof.

  In electrolytic plating, a plating film is formed on the surface of the conductive layer of the substrate by applying a predetermined voltage between the anode (anode electrode) in the plating solution and the conductive layer (cathode electrode) of the substrate. . The conductive layer of the substrate also has an electrical resistance. However, at a position away from the cathode electrode contact of the substrate, the current flowing through the position becomes small due to the electrical resistance of the conductive layer. Will be reduced. In particular, when the thickness of the conductive layer is thin, the electrical resistance of the conductive layer is further increased, so that such a phenomenon appears remarkably and a uniform plating film cannot be formed over the entire surface of the substrate.

  Therefore, in this embodiment, the anode 322 is covered with the high resistance element 324 whose electrical resistance is increased to such an extent that the electrical resistance of the conductive layer can be ignored, thereby suppressing the influence of the electrical resistance of the conductive layer of the substrate W. . Thereby, a difference in current density in the substrate W can be reduced, and a plating film can be formed uniformly over the entire surface of the substrate W. In the present embodiment, for example, the high resistance element 324 is configured by containing a plating solution in an alumina porous ceramic having a porosity of 30% and an average pore diameter of 100 μm. Although such porous ceramics themselves are insulators, the plating solution 45 is complicatedly introduced into the inside thereof, and the path of the plating solution 45 inside the high resistance element 324 is made considerably long in the thickness direction. The electric conductivity of the resistance element 324 is made smaller than the electric conductivity of the plating solution 45. However, the present invention is not limited to this, and silicon carbide ceramics, vinyl chloride bundled in a fiber shape, and these are welded together, or a foamed material such as polyvinyl alcohol or a fiber such as Teflon (registered trademark) is used for woven or non-woven fabric. The high resistance element 324 can also be configured by using the one molded in a manner. The porosity, pore diameter, porosity of the pores, and the like of the high resistance element 324 can be appropriately selected according to the purpose.

  In the center of the bottom of the plating tank 302, a plating solution ejection pipe 330 is provided as a plating solution supply means for forming a jet of the plating solution 45 directed upward. The plating solution ejection pipe 330 is connected to the plating solution adjustment tank 40 via a plating solution supply pipe 55, and a control valve 56 for adjusting the pressure on the secondary side is interposed in the middle of the plating solution supply pipe 55. Has been. Through this control valve 56, a predetermined flow rate of the plating solution 45 is jetted from the plating solution jet pipe 330 into the plating tank 302. A plating solution receiver 332 is disposed outside the upper portion of the plating tank 302, and the plating solution receiver 332 is connected to the plating solution adjustment tank 40 via a plating solution return pipe 334. A valve 336 is interposed in the middle of the plating solution return pipe 334.

  The plating solution 45 ejected from the plating solution ejection pipe 330 and overflowing the plating tank 302 is collected by the plating solution receiver 332 and flows into the plating solution adjustment tank 40 through the plating solution return pipe 334. After the temperature adjustment of the plating solution 45 and the concentration measurement and adjustment of various components are performed in the plating solution adjustment tank 40, the plating solution 45 passes from the plating solution adjustment tank 40 through the filter 236 as the pump 234 is driven. It is supplied to the ejection pipe 330.

  Incidentally, as described above, when the anode body 320 in which the anode 322 is covered with the high resistance element 324 is used, bubbles may enter the pores of the high resistance element 324. Such bubbles act as insulators and cause disturbance in the current distribution during the plating process. In order to prevent this, in the present embodiment, prior to performing the plating process in the plating unit 300, a vacuum pump as a decompression unit is ejected from the plating liquid ejection pipe 330 to the anode body 320 while being sprayed. 314 is driven to depressurize the sealed space 310. During the decompression, the valve 336 installed in the plating solution return pipe 334 is closed. In this way, by injecting the plating solution 45 from the plating solution ejection pipe 330 onto the anode body 320, the bubbles that have entered the pores of the high resistance element 324 can be driven out from the high resistance element 324 to the outside. Further, by reducing the pressure of the sealed space 310, it is possible to promote the generation of bubbles from the high resistance element 324. Furthermore, if the vibration is applied to the anode body 320 by the vibration device 316, this promoting effect can be further enhanced.

As described above, after the bubbles are expelled from the high resistance element 324 of the anode body 320, the substrate W held on the substrate table 304 is plated. In this plating process, first, the head unit 306 is lowered, and the substrate W held on the substrate table 304 is lowered to a predetermined position in the plating solution 45. Then, while applying a predetermined voltage between the anode 322 of the anode body 320 and the conductive layer of the substrate W, the plating solution 45 is ejected upward from the plating solution ejection pipe 330 at the bottom of the plating tank 302, and the substrate W A jet of the plating solution 45 is applied to the lower surface (plating surface). As a result, a plating film is formed on the lower surface of the substrate W. Here, also in this embodiment, as above mentioned, the supply amount of the plating solution at the time of non-plating and less than the supply amount of the plating solution during plating, the addition Thus, included in the plating solution 45 Reduces agent consumption.

  In the present embodiment, the plating solution 45 is sprayed from the plating solution ejection pipe 330 to the anode body 320 to expel the bubbles inside the pores of the high resistance element 324. For example, as shown in FIG. Separately from the ejection pipe 330, the plating liquid ejection pipe 338 may be connected to the anode body 320, particularly the high resistance element 324, and the plating liquid may be supplied from the plating liquid ejection pipe 338 to the anode body 320 prior to the plating process. Good. If the plating solution is supplied directly to the high resistance element 324 in this way, the bubbles can be expelled from the high resistance element 324 more effectively. Further, as shown in FIG. 18, it goes without saying that the present invention can be applied even when a plurality of high resistance elements 324 are arranged in the plating solution 45.

  Although one embodiment of the present invention has been described so far, it is needless to say that the present invention is not limited to the above-described embodiment, and may be implemented in various forms within the scope of the technical idea.

Is a plan view showing an example of a fit Kki device. It is explanatory drawing which shows the flow of the airflow in the plating apparatus shown in FIG. It is a top view which shows the inversion machine provided in the pre-processing unit shown in FIG. 1, a 1st substrate stage, and a 2nd substrate stage. FIG. 4 is a front view of FIG. 3. It is an expanded sectional view which shows the principal part of the plating process unit in the plating apparatus shown in FIG. It is a top view of the plating processing tank shown in FIG. It is a plating solution flow figure which shows the state of the flow of the plating solution in the plating apparatus shown in FIG. It is the elements on larger scale of FIG. It is a top view which shows the arrangement | positioning state of the contact for cathode electrodes shown in FIG. It is a top view of the head part of the plating processing unit shown in FIG. It is a front view of FIG. It is a figure for demonstrating rotation operation | movement of the head part of the plating processing unit shown in FIG. It is a figure for demonstrating the raising / lowering operation | movement of the head part of the plating processing unit shown in FIG. It is a figure for demonstrating the attachment or detachment operation | movement of the chuck | zipper part of the head part of the plating processing unit shown in FIG. It is the elements on larger scale of FIG. The plating apparatus according implementation embodiment of the present invention is a diagram schematically showing. It is a figure which shows typically the plating apparatus in other embodiment of this invention. It is a figure which shows typically the plating apparatus in other embodiment of this invention. It is a figure which shows to the process the example which forms copper wiring by copper plating.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Equipment 11 Partition wall 12 Plating space 13 Clean space 15 Cassette stage 16 Cleaning / drying device 17, 24, 27 Transfer device 20 Reversing machine 21 Pretreatment unit 22, 300 Plating unit 23a, 23b, 26a, 26b Substrate stage 25 Chemical solution Cleaning device 28 Container 31, 36 Filter 33, 39 Circulating pipe 40 Plating solution adjustment tank 45 Plating solution 46 Plating treatment tank 47 Head part 48, 322 Anode 49 Plating chamber 50, 302 Plating tank 51 Handle 52 Anode holder 52a Flange part 53 Plating solution ejection nozzle 54 Plating solution supply path 55 Plating solution supply pipe 56 Control valve 57, 59 Plating solution discharge port 58 Weir member 60a, 60b Plating solution discharge tube 61a Flow rate regulator 62 Vertical rectifying ring 63 Horizontal rectifying ring 70 Housing 71 Substrate 72 tables Holding portion 73 Lower seal material 74 Upper seal material 75 Air vent hole 76 Cathode electrode contact 77 Feed contact 80 Fixed frame 81 Rail 82 Slider 83 Base 84 Table shaft 85 Spline portion 86 Servo motor 87 Drive pulley 88 Driven pulley 89 Timing belt 90 Bracket 91 Actuator 92, 95 Connector 93 Actuator slider 94 Rotary joint 96 Opening 97 Actuator 98 Actuator slider 100 Chuck mechanism 101 Hook 101a Lever part 102 Pin 104 Claw 105 Air cylinder 106 Pusher 107 Opening 110 Seal case 111 Hand 112 Stud 113 Chuck piece 200 Seal Material 202 Plating solution reservoir 204 Horizontal hole 206 Liquid level detection sensor 208 Cathode electrode plate 226 Riza Bar 228, 234 Pump 230 Temperature controller 232 Plating solution analysis unit 236 Filter 304 Substrate table 306 Head unit 308 Sealed cover 310 Sealed space 312 Exhaust path 314 Vacuum pump 316 Vibrating device 320 Anode body 324 High resistance element 330, 338 Plating solution ejection tube 332 Plating solution receiver 334 Plating solution return pipe 336 Valve

Claims (2)

In a plating apparatus comprising a plating tank for holding a plating solution, a substrate holding unit for holding a substrate connected to a cathode in at least the plating solution, and an anode disposed inside the plating tank,
A high resistance element having an electrical conductivity smaller than the electrical conductivity of the plating solution, disposed between the substrate and the anode;
A vibration device for vibrating the high-resistance element ;
A sealing cover for sealing the plating tank;
A plating apparatus comprising pressure reducing means for reducing the pressure of a sealed space formed between the sealing cover and the plating solution in the plating tank . Plating apparatus according to claim 1, further comprising a plating solution supply means for supplying the plating solution to the plating tank to immerse the high-resistance elements in the plating solution.

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