CN1534112A - Device for avoiding hole forming on electroplating deposited copper film and its use method - Google Patents
Device for avoiding hole forming on electroplating deposited copper film and its use method Download PDFInfo
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- CN1534112A CN1534112A CNA031090524A CN03109052A CN1534112A CN 1534112 A CN1534112 A CN 1534112A CN A031090524 A CNA031090524 A CN A031090524A CN 03109052 A CN03109052 A CN 03109052A CN 1534112 A CN1534112 A CN 1534112A
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- electroplating deposition
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Abstract
An improved electro-chemical deposition copper (ECD-Cu) equipment has an electrolyzer, an anode in the electrolyzer, and a rotary table for putting a wafer as cathode on it. A method for preventing the cavities from being generated in the deposited copper film features that during the electro-chemical deposition, said rotary table is rotating alternatively in different directions by a cycle of 1-10 seconds to avoid the generation of steady eddy.
Description
Technical field
(Electro-Chemical Deposition Copper ECD-Cu) installs, and refers to a kind of electroplating deposition copper device of improvement especially, can avoid electroplating deposition copper film to generate the hole to the invention provides a kind of electroplating deposition copper.
Background technology
Along with the integration of IC constantly increases, the RC of metal connecting line postpones (RC time delay) effect can expectedly can have influence on element operation usefulness.If improving this situation, desire can adopt the stray capacitance of the lower metal of resistance value as the dielectric layer between plain conductor or reduction plain conductor.Copper wiring is a feasible program that solves the RC delayed effect.Nearly 2 years, the improvement of some process technique, exploitation of for example researchdevelopment of various diffusion barrier, and chemomechanical copper grinding technology or the like makes the problem that early stage copper wiring met with to be solved one by one.The solution of processing procedure integration problem adds that copper itself has advantages such as low-resistance value and high thermal conductivity, and therefore in the processing procedure of 0.25 μ m below the generation, the application of copper in the IC processing procedure will be more and more widely.
At present, the technology in order to depositing copper film includes physical vapor deposition, chemical vapour deposition, electroless plating method, reaches electrochemical plating etc.Wherein, because the copper electrochemical plating have the advantage that cost is cheap and output capacity is fast, be widely used in the industry member.In electroplating process, the homogeneity of coated surface can be subjected to the influence of factors such as cleaning plating on composition, temperature, current density and the plated body surface of plating bath.For example, copper-plated the time, the copper film that plating bath plated that contains cryanide ion can be more smooth than the copper film that plating bath plated of sulphate-containing ion.Resulting coated surface is comparatively slightly made under high temperature and high current density, and the pollutent that plating bath is contained or the pollutent on plated body surface then all can cause plated film to come off easily.Therefore when electroplating, can do control to above condition in order to increase surface uniformity.
In addition, for the ionic concn that makes the plated body surface is kept definite value, general negative electrode adopts rotating electrode more, makes ion in the plating bath be easy to reach the surface of plated body.See also Fig. 1 and 2, Fig. 1 and Fig. 2 are known electroplanting device synoptic diagram.At first, as shown in Figure 1, electroplate major trough 10, two-layer inside and outside being divided into, it is respectively electroplates inside groove 12 and electroplates water jacket 14, in order to the splendid attire electroplate liquid.The main component of electroplate liquid is the solution that contains cupric ion.Reference electrode (Reference electrode) 16, anode (Counter electrode) 18 all adopts the design of porous copper mesh, can make field flow direction unanimity.Negative electrode (Work electrode) 20 is a rotating electrode, is connected on the galvanized wafer 22 of desire.When this electroplating system was bestowed external voltage or electric current, the circuit of being made up of anode, electroplate liquid, negative electrode just can be switched on, and carries out reduction reaction at negative electrode, and copper atom is deposited on the wafer.
Fig. 2 is a cathode motion direction synoptic diagram.As shown in Figure 2, in order to promote the homogeneity of coating film thickness, generally negative electrode all can rotate when electroplating, and can continue to touch fresh electrolytic solution to guarantee wafer 22.In the known techniques, negative electrode is adopted the single movement direction, and rotation in the same direction in electroplating process just is easy in solution to form a stable whirlpool (vortex) like this, and has numerous air-bubble and generate to be mixed in and be difficult in the whirlpool removing.These bubbles can cause coated surface to have cavity (cavity) to produce, and then influence the quality of plated film.
Summary of the invention
Therefore, purpose of the present invention is for providing a kind of electroplanting device and use-pattern thereof, to improve the plated film quality.
The invention provides a kind of electroplating deposition (Electro-ChemicalDeposition that is used for manufacture of semiconductor, ECD) device, this electroplanting device includes an electrolyzer, one anode, be located in this electrolyzer, and a rotation platform, in order to placing a wafer as the electroplating deposition negative electrode, and this rotation platform when this electroplating deposition processing procedure carries out with clockwise and counterclockwise staggered running.
The object of the present invention is achieved like this: a kind of electroplating deposition that is used for the semiconductor processing procedure (this electroplating deposition device includes for Electro-Chemical Deposition, ECD) device:
One electrolyzer is used for splendid attire one electrolytic solution;
One anode is located in this electrolyzer; And
One rotation platform is used for putting a wafer as the electroplating deposition negative electrode, and this rotation platform turns round with counter clockwise direction is staggered when this electroplating deposition processing procedure carries out in a clockwise direction.
This electroplating deposition device is used for electroplating deposition copper metal, and (copper, Cu), and this electrolytic solution is copper sulfate (copper sulfate, CuSo4) solution.
The flow of this electrolytic solution is about per minute 1 liter (1pm) to 15 liters of per minutes.
This electroplating deposition device uses a direct current (DC), and electric current is about 1 ampere (A) to 10 amperes, or uses an alternating-current (AC), electric current to be about-10 amperes (A) to 10 amperes, and frequency is about 5 hertz (Hz) to 20 hertz.
The about per minute 50 of the rotating speed of this rotation platform changes (rpm) to per minute 150 commentaries on classics.
This rotation platform clockwise direction is about 1 second to 10 seconds with the cycle of staggered running counterclockwise.
An a kind of electroplating deposition copper (Electro-Chemical Deposition Copper that avoids, ECD-Cu) the sedimentary film of device generates the method in hole (cavity), this electroplating deposition copper device includes an electrolyzer and is used for splendid attire one electrolytic solution, one anode is located in this electrolyzer, an and rotation platform, be used for putting a wafer as the electroplating deposition negative electrode, this method make this rotation platform when this electroplating deposition copper wiring is carried out to be about 1 second to 10 seconds alternately just contrary direction rotation of cycle.
This electrolytic solution is copper sulfate (copper sulfate, CuSo4) solution.
The flow of this electrolytic solution is about per minute 1 liter (1pm) to 15 liters of per minutes.
This electroplating deposition device uses a direct current (DC), and electric current is about 1 ampere (A) to 10 amperes, or uses an alternating-current (AC), electric current to be about-10 amperes (A) to 10 amperes, and frequency is about 5 hertz (Hz) to 20 hertz.
The about per minute 50 of the rotating speed of this rotation platform changes (rpm) to per minute 150 commentaries on classics.
Because the rotation platform of placement wafer of the present invention is with the running that interlocks clockwise and counterclockwise, can improve the single direction rotation in the known techniques and cause the shortcoming of stablizing whirlpool, and then improve bubble in the whirlpool and keep somewhere the problems that cause coated surface to have many cavities to produce in crystal column surface, to reach the purpose that improves the plated film quality.
Description of drawings
Fig. 1 is the electroplanting device of known techniques.
Fig. 2 is the cathode motion mode synoptic diagram of known techniques.
Fig. 3 is a plating mode of the present invention.
Fig. 4 is a cathode motion mode synoptic diagram of the present invention.
Nomenclature
10 electrolysis major troughs, 12 electrolysis inside grooves, 14 electrolysis water jackets
16 reference electrodes, 18 anodes, 20 negative electrodes
22 galvanized wafer 30 electrolysis major troughs 32 electrolysis inside grooves
34 electrolysis water jackets, 36 reference electrodes, 38 anodes
40 negative electrodes, 42 galvanized wafers
Embodiment
The present invention is a kind of electroplating deposition (Electro-Chemical Deposition that is used for manufacture of semiconductor, ECD) device, this electroplanting device includes an electrolyzer, one anode, be located in this electrolyzer, and a rotation platform, in order to placing a wafer as the electroplating deposition negative electrode, and this rotation platform when this electroplating deposition processing procedure carries out with clockwise and counterclockwise staggered running.Because rotation platform of the present invention is with the running that interlocks clockwise and counterclockwise, so can reduce the formation of stablizing whirlpool in the solution effectively, be attached to crystal column surface with the bubble that improves in the whirlpool, and the difficult shortcoming of getting rid of, and then reduce many duck eyes that coated surface produced, to improve the plated film quality.
Fig. 3 and Fig. 4 are synoptic diagram of the present invention.Please refer to Fig. 3, Fig. 3 is an electroplanting device of the present invention, similarly, electrolysis major trough 30, two-layer inside and outside being divided into, be respectively electrolysis inside groove 32 and electrolysis water jacket 34, in order to splendid attire electrolytic solution.The main component of electrolytic solution is the solution that contains cupric ion, and industrial employed plating bath is interior to be divided into solution such as containing cryanide ion and sulfate ion now.But based on considering in the environmental protection, industry member is used copper-bath more at present.In addition, in plating bath, also can add some additives, to increase the coated surface planeness.In preferred embodiment of the present invention, electrolytic solution is copper-bath, and flow is about 1 liter of per minute, and (liter per minute is 1pm) to 15 liters of per minutes.
Reference electrode (Reference electrode) 36 and anode (Counter electrode) 38 are all adopted the design of porous copper mesh, can make field flow direction unanimity, and negative electrode (Work electrode) 40 is a rotating electrode, is connected on the galvanized wafer 42 of desire.Bestowed an external voltage or an electric current when this electroplating system, the circuit of being made up of anode, electrolytic solution, negative electrode just can be switched on, and carries out reduction reaction at negative electrode, and copper atom is deposited on the wafer.Used in the present invention be a direct current (DC), electric current is about 1 ampere (A) to 10 amperes, or an alternating-current (AC), electric current is about-10 amperes (A) to 10 amperes, frequency is about 5 hertz (Hz) to 20 hertz.
Fig. 4 is a cathode motion direction synoptic diagram of the present invention.As shown in Figure 4, in order to promote the homogeneity of coating film thickness, generally negative electrode all can rotate when electroplating, and can continue to touch fresh electrolytic solution to guarantee wafer 22.In the present invention, negative electrode is adopted clockwise and counterclockwise staggered running, and its positive reverse rotational direction alternate cycle is about 1 second to 10 seconds, and the about per minute 50 of rotating speed changes (rpm) to per minute 150 commentaries on classics.By so staggered running of just contrary direction, can avoid producing stable whirlpool in the solution, be detained in coated surface with the bubble of keeping away in the face whirlpool, and cause the cavity in coated surface.
Compared to known techniques, the present invention avoids stablizing in the solution generation of whirlpool by the direction of motion that changes the negative electrode rotating electrode, is detained in the phenomenon of coated surface to improve bubble, reduce the purpose that the coated surface cavity produces and reach, to increase the Flatness of plated film.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (11)
1. electroplating deposition device that is used for the semiconductor processing procedure, this electroplating deposition device includes:
One electrolyzer is used for splendid attire one electrolytic solution;
One anode is located in this electrolyzer; And
One rotation platform is used for putting a wafer as the electroplating deposition negative electrode, and this rotation platform turns round with counter clockwise direction is staggered when this electroplating deposition processing procedure carries out in a clockwise direction.
2. electroplating deposition device as claimed in claim 1 is characterized in that, this electroplating deposition device is used for electroplating deposition copper metal, and this electrolytic solution is copper-bath.
3. electroplating deposition device as claimed in claim 1 is characterized in that, the flow of this electrolytic solution is about 1 liter of per minute to 15 liters of per minutes.
4. electroplating deposition device as claimed in claim 1 is characterized in that, this electroplating deposition device uses a direct current, and electric current is about 1 ampere to 10 amperes, or uses an alternating-current, electric current to be about-10 amperes to 10 amperes, and frequency is about 5 hertz to 20 hertz.
5. electroplating deposition device as claimed in claim 1 is characterized in that, the about per minute 50 of the rotating speed of this rotation platform goes to per minute 150 to be changeed.
6. electroplating deposition device as claimed in claim 1 is characterized in that, this rotation platform clockwise direction is about 1 second to 10 seconds with the cycle of staggered running counterclockwise.
7. method of avoiding the sedimentary film of an electroplating deposition copper device to generate the hole, this electroplating deposition copper device includes an electrolyzer and is used for splendid attire one electrolytic solution, one anode is located in this electrolyzer, an and rotation platform, be used for putting a wafer as the electroplating deposition negative electrode, this method make this rotation platform when this electroplating deposition copper wiring is carried out to be about 1 second to 10 seconds alternately just contrary direction rotation of cycle.
8. method as claimed in claim 7 is characterized in that, this electrolytic solution is copper-bath.
9. method as claimed in claim 8 is characterized in that, the flow of this electrolytic solution is about 1 liter of per minute to 15 liters of per minutes.
10. method as claimed in claim 7 is characterized in that, this electroplating deposition device uses a direct current, and electric current is about 1 ampere to 10 amperes, or uses an alternating-current, electric current to be about-10 amperes to 10 amperes, and frequency is about 5 hertz to 20 hertz.
11. method as claimed in claim 7 is characterized in that, the about per minute 50 of the rotating speed of this rotation platform goes to per minute 150 to be changeed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031090524A CN1534112A (en) | 2003-04-02 | 2003-04-02 | Device for avoiding hole forming on electroplating deposited copper film and its use method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031090524A CN1534112A (en) | 2003-04-02 | 2003-04-02 | Device for avoiding hole forming on electroplating deposited copper film and its use method |
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| CN1534112A true CN1534112A (en) | 2004-10-06 |
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| CNA031090524A Withdrawn CN1534112A (en) | 2003-04-02 | 2003-04-02 | Device for avoiding hole forming on electroplating deposited copper film and its use method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100449710C (en) * | 2005-01-25 | 2009-01-07 | 台湾积体电路制造股份有限公司 | Method and apparatus for electrochemical plating semiconductor wafers |
| CN101622380B (en) * | 2007-03-02 | 2012-05-30 | 古河电气工业株式会社 | Production method and device of surface roughened copper plate, and surface roughened copper plate |
| CN103741179A (en) * | 2013-12-26 | 2014-04-23 | 中国电子科技集团公司第五十五研究所 | Three-dimensional stereoscopic gold-electroplating device and method for semiconductor silicon wafer with through holes |
| CN103741179B (en) * | 2013-12-26 | 2016-11-30 | 中国电子科技集团公司第五十五研究所 | A kind of 3 D stereo electrogilding device and method of the semi-conductor silicon chip of band through hole |
| CN107502935A (en) * | 2017-07-26 | 2017-12-22 | 武汉新芯集成电路制造有限公司 | A kind of method of electro-coppering |
| CN108118377A (en) * | 2017-12-27 | 2018-06-05 | 德淮半导体有限公司 | Reduce the equipment and method of empty wafer defect |
| WO2018205404A1 (en) * | 2017-05-09 | 2018-11-15 | 创弘智能芯片研究院（深圳）有限公司 | Electroplating apparatus and electroplating method for wafer |
-
2003
- 2003-04-02 CN CNA031090524A patent/CN1534112A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100449710C (en) * | 2005-01-25 | 2009-01-07 | 台湾积体电路制造股份有限公司 | Method and apparatus for electrochemical plating semiconductor wafers |
| CN101622380B (en) * | 2007-03-02 | 2012-05-30 | 古河电气工业株式会社 | Production method and device of surface roughened copper plate, and surface roughened copper plate |
| CN103741179A (en) * | 2013-12-26 | 2014-04-23 | 中国电子科技集团公司第五十五研究所 | Three-dimensional stereoscopic gold-electroplating device and method for semiconductor silicon wafer with through holes |
| CN103741179B (en) * | 2013-12-26 | 2016-11-30 | 中国电子科技集团公司第五十五研究所 | A kind of 3 D stereo electrogilding device and method of the semi-conductor silicon chip of band through hole |
| WO2018205404A1 (en) * | 2017-05-09 | 2018-11-15 | 创弘智能芯片研究院（深圳）有限公司 | Electroplating apparatus and electroplating method for wafer |
| CN107502935A (en) * | 2017-07-26 | 2017-12-22 | 武汉新芯集成电路制造有限公司 | A kind of method of electro-coppering |
| CN108118377A (en) * | 2017-12-27 | 2018-06-05 | 德淮半导体有限公司 | Reduce the equipment and method of empty wafer defect |
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