JP2004162129A - Plating apparatus and plating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plating apparatus and a plating method for enhancing the in-plane uniformity of the film thickness of a plating film by employing a dip system with excellent bubble removal and adjusting the flow of plating solution in a plating tank. <P>SOLUTION: A plating solution injection nozzle 48 to inject plating solution 12 toward a surface to be plated of a work W arranged perpendicularly inside a plating tank 16 is disposed inside the plating tank 16 to hold the plating solution 12. This plating solution injection nozzle 48 is disposed on, for example, a paddle 34 which is disposed at the position facing the surface to be plated of the work W and moved along the surface to be plated to agitate the plating solution 12 in the plating tank 16. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention provides, for example, a plating apparatus and a plating method for plating a surface to be plated of a substrate, particularly forming fine plating grooves or holes provided on the surface of a semiconductor wafer or the like, forming a plating film in a resist opening, The present invention relates to a plating apparatus and a plating method used for forming bumps (protruding electrodes) electrically connected to electrodes of a package or the like on a surface of a wafer.
[0002]
[Prior art]
For example, in a TAB (Tape Automated Bonding) or a flip chip, gold, copper, solder, or nickel, or a protruding connection in which these are stacked in a multilayer at predetermined positions (electrodes) on the surface of a semiconductor chip on which wiring is formed. 2. Description of the Related Art It is widely practiced to form electrodes (bumps) and electrically connect to electrodes of a package or TAB electrodes via the bumps. As a method of forming the bump, there are various methods such as an electrolytic plating method, a vapor deposition method, a printing method, and a ball bump method. Electroplating methods, which have relatively stable performance, have come to be used frequently.
[0003]
Here, the electrolytic plating method is a jet type or a cup type in which the surface to be plated of a substrate such as a semiconductor wafer is placed horizontally with the surface to be plated facing downward (face down), and a plating solution is blown up from below to perform plating. The substrate is set up vertically, and the plating solution is roughly divided into a dip type in which a plating solution is injected from under the plating tank and the plating is performed while overflowing. The electroplating method using the dip method has the advantages that the bubbles that adversely affect the plating quality are well removed and the footprint is small, so the dimensions of the plating holes are relatively large and It is considered that it is suitable for bump plating which requires time.
[0004]
FIG. 16 shows an example of a conventional electrolytic plating apparatus employing a so-called dip method. This electrolytic plating apparatus includes a substrate holder 10 for detachably holding a substrate W such as a semiconductor wafer, a plating solution 12, and a substrate W and an anode (anode electrode) 14 held by the substrate holder 10. A plating voltage is applied between a plating tank 16 arranged so as to be immersed in the substrate and facing each other, and a power supply layer (seed layer) provided on the anode 14 and the surface (plated surface) of the substrate W, and a plating current is applied. And a plating power supply 18 for flowing the current. On the side of the plating tank 16, there is provided an overflow tank 22 for flowing the plating solution 12 overflowing the upper end of the overflow weir 20 of the plating tank 16. The overflow tank 22 and the plating tank 16 are connected to a circulation line 24. Are tied together. A circulation pump 26, a constant temperature unit 28, and a filter 30 are provided inside the circulation line 24. Thereby, the plating solution 12 supplied into the plating tank 16 with the driving of the circulation pump 26 fills the inside of the plating tank 16, and then overflows from the overflow weir 20 and flows into the overflow tank 22. It is configured to return to the circulation pump 26 and circulate.
[0005]
According to this plating apparatus, the plating solution 12 is supplied from the lower part into the plating tank 16, and the overflow holder 20 is overflowed and circulated, and the substrate holder 10 holding the substrate W is placed in the plating tank 16. The plating film is formed on the surface of the substrate W by arranging the plating solution 12 so as to face the anode 14 and applying a predetermined plating voltage from the plating power supply 18 between the anode 14 and the substrate W. .
[0006]
In the plating apparatus adopting the conventional dip method, the plating solution 12 is supplied from the lower part of the plating tank 16 and flows upward through the inside of the plating tank 16, and then circulates by overflowing the overflow weir 20. Therefore, there is a problem that it is extremely difficult to flow the plating solution 12 uniformly along the surface (plated surface) of the substrate W over the entire surface of the substrate W during the plating process. Was.
[0007]
For this reason, the paddle shaft 32 is arranged in parallel between the substrate holder 10 and the anode 14 above the plating tank 16, and a plurality of paddles (stirring rods) 34 are substantially provided on the lower surface of the paddle shaft 32. The plating solution 12 in the plating tank 16 is agitated vertically by reciprocating the paddle 34 in parallel with the substrate W via the paddle shaft 32 during the plating process, so that the plating solution 12 is formed along the surface of the substrate W. It is possible to form a plating film having a more uniform thickness over the entire surface of the substrate W by making the flow of the plating solution 12 uniform over the entire surface of the substrate W (by eliminating the directionality of the flow of the plating solution). Has been done.
[0008]
[Problems to be solved by the invention]
However, during the plating process, the paddle is reciprocated in parallel with the substrate (plated object) to stir the plating solution in the plating tank, so that the plating solution flows along the surface of the substrate over the entire surface. Even if it is made even more uniform, as described above, the plating solution is supplied into the plating tank from the lower part of the plating tank and overflows from the upper part of the overflow weir. At present, there is a certain limit in the in-plane uniformity of the plating film formed due to the strong influence of the plating film. As described above, the plating film strongly affected by the flow of the plating solution is formed, and the in-plane uniformity of the plating film has a certain limit similarly in the electroless plating apparatus.
[0009]
The present invention has been made in view of the above circumstances, and employs a dip method in which bubbles are easily removed, and furthermore, adjusts a flow of a plating solution in a plating tank to improve in-plane uniformity of a film thickness of a plating film. It is an object of the present invention to provide a plating apparatus and a plating method that can be further increased.
[0010]
[Means for Solving the Problems]
The invention according to claim 1 is a plating solution spray nozzle for spraying a plating solution into a plating tank holding a plating solution toward a surface to be plated of a material to be plated which is vertically arranged inside the plating tank. Is a plating apparatus characterized by the above.
In this way, the plating solution is sprayed from the plating solution spray nozzle toward the surface to be plated of the material to be plated which is vertically arranged, and is applied more uniformly as a jet from a direction more perpendicular to the surface to be plated, thereby performing plating. The in-plane uniformity of the film thickness can be further improved. Examples of this injection form include straight, shower or spray.
[0011]
The invention according to claim 2 is the plating apparatus according to claim 1, wherein the plating solution spray nozzle relatively moves in parallel with a surface to be plated of the material to be plated.
The invention according to claim 3 is characterized in that the plating solution spray nozzle is arranged between the material to be plated and an anode arranged in contact with the plating solution so as to face the material to be plated. The plating apparatus according to claim 1 or 2, wherein
[0012]
In the invention according to claim 4, the plating solution spray nozzle is disposed at a position facing the surface to be plated of the material to be plated, and moves along the surface to be plated to remove the plating solution in the plating tank. The plating apparatus according to claim 1, wherein the plating apparatus is provided on a paddle for stirring. With this, the plating solution in the plating tank is agitated by the paddle, and the plating solution injection nozzle is provided on the paddle, so that the plating solution injection nozzle can be used without separately providing a dedicated member for moving with the plating solution injection nozzle. While moving along the surface of the material to be plated, the plating solution is sprayed from the plating solution spray nozzle toward the surface of the material to be plated, and the jet is more uniform from the direction perpendicular to the surface to be plated. Can be used.
[0013]
The invention according to claim 5 is characterized in that the plating solution spray nozzle is mounted on an adjustment plate disposed between the material to be plated and an anode facing the material to be plated. 2. The plating apparatus according to 1. Thereby, for example, in order to lower the potential of the peripheral portion of the substrate or the like and to make the thickness of the plating film more uniform, the holding plate for holding the plating solution spray nozzle on the adjustment plate widely provided in the electrolytic plating apparatus is held. By also having a role as a material, the plating solution spray nozzle can be arranged at a predetermined position with a relatively simple configuration.
[0014]
The invention according to claim 6 is characterized in that the plating solution spray nozzle can adjust an angle of a plating solution sprayed from the plating solution spray nozzle with respect to a surface to be plated. 5. The plating apparatus according to any one of 5. Thereby, for example, according to the size of the concave portion formed on the surface to be plated of the material to be plated, the angle at which the flow of the plating solution hits the surface to be plated is arbitrarily adjusted, and the plating solution is formed on the surface to be plated. It is possible to efficiently hit the recessed portion or the like.
[0015]
The invention according to claim 7 is the plating apparatus according to any one of claims 1 to 6, wherein the plating solution in the plating tank is circulated and ejected from the plating solution ejection nozzle.
The invention according to claim 8 is the plating apparatus according to claim 7, further comprising a flow rate adjusting means for adjusting a flow rate of the plating solution injected from the plating solution injection nozzle. Thus, a predetermined amount of the plating solution can be sprayed from the plating solution spray nozzle toward the surface of the material to be plated.
[0016]
The invention according to claim 9 is the plating apparatus according to any one of claims 1 to 8, wherein the plating solution spray nozzle is a nozzle row in which a plurality of nozzles are arranged.
[0017]
According to a tenth aspect of the present invention, a material to be plated is disposed in a plating tank holding a plating solution so that a surface to be plated is substantially vertical, and an anode is placed in contact with the plating solution so as to face the material to be plated. A plating solution spray nozzle for spraying a plating solution toward the plating surface of the material to be plated is disposed between the material to be plated and the anode, and the plating solution spray nozzle and the material to be plated are covered. A plating solution is sprayed from the plating solution spray nozzle toward the surface to be plated of the material to be plated while being relatively moved in parallel with the plating surface, and a plating current flows between the anode and the material to be plated to cause the plating solution to flow. This is a plating method for plating a surface to be plated of a plating material.
[0018]
The invention according to claim 11, wherein the relative movement of the plating solution spray nozzle and the material to be plated parallel to the surface to be plated is a reciprocating motion parallel to the surface to be plated. Is a plating method.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
1 and 2 show an embodiment of the present invention applied to an electrolytic plating apparatus. In this electrolytic plating apparatus, a vertically movable substrate holder 10 for detachably holding a substrate (substrate to be plated) W such as a semiconductor wafer and a plating solution 12 are accommodated, and held vertically by the substrate holder 10. A plating tank 16 in which the substrate W and the anode (anode electrode) 14 are immersed in the plating solution 12 and arranged to face each other, and a power supply layer (seed) provided on the surface of the anode 14 and the substrate W (plated surface). A plating power supply 18 for applying a plating voltage between the first and second layers to flow a plating current is provided.
[0020]
A paddle shaft 32 is arranged above the plating tank 16 in parallel between the substrate holder 10 and the anode 14, and a plurality of substantially flat plates extending in the direction of the substrate holder 10 on the lower surface of the paddle shaft 32. A paddle (stirring bar) 34 is vertically suspended substantially vertically. The paddle shaft 32 is driven by a forward / reverse rotation of the motor 42 via a drive mechanism 46 including a rack 40 attached to the paddle shaft 32 and a worm 44 fixed to a drive shaft of the motor 42 and meshing with the rack 40. It is configured to move back and forth (left and right). Thus, the paddle 34 reciprocates in parallel with the substrate W with the back and forth movement of the paddle shaft 32, and stirs the plating solution 12 in the plating tank 16.
It should be noted that, as the driving mechanism, of course, any combination such as a combination of a rack and a pinion, a link mechanism, and a linear slider may be used.
[0021]
At the end of each paddle 34 on the substrate holder 10 side, a plating solution injection nozzle (injection port) for injecting the plating solution 12 toward the substrate W held by the substrate holder 10 at a predetermined position along the height direction. ) 48 are provided so as to open toward the substrate W held by the substrate holder 10. Inside the paddle shaft 32 and each paddle 34, a plating solution flow path 50 communicating with each other and reaching the plating solution spray nozzle 48 is provided. One end of a plating solution circulation line 56 in which the controller 54 is installed is connected, and the other end of the plating solution circulation line 56 is connected to the plating tank 16. Thereby, the plating solution 12 in the plating tank 16 is sequentially pumped up with the driving of the circulation pump 52, and the flow rate of the plating solution 12 flowing through the plating solution circulation line 56 via the flow rate controller 54 is adjusted. The plating solution 12 whose flow rate has been adjusted is supplied from the plating solution flow path 50 to each of the plating solution jet nozzles 48, and is jetted from each of the plating solution jet nozzles 48 toward the substrate W held by the substrate holder 10. Has become.
[0022]
As described above, by providing the plating solution spray nozzle 48 on the paddle 34 that reciprocates in parallel with the substrate W and stirs the plating solution 12 in the plating bath 16, a dedicated member provided with the plating solution spray nozzle and moved is separately provided. It is not necessary to provide, and the structure can be simplified.
[0023]
In this example, a flow rate controller 54 is provided as a flow rate adjusting means for adjusting the flow rate of the plating solution 12 injected from the plating solution injection nozzle 48, and a predetermined amount of the plating solution 12 is supplied from the plating solution injection nozzle 48 to the substrate W. Although an example is shown in which injection can be performed toward the pump, a positive displacement pump may be used as the circulation pump 52, and the pump itself may serve as a flow rate adjusting unit.
[0024]
In this example, the plating solution 12 is sprayed in a straight manner in which the plating solution 12 is sprayed linearly. However, as shown in FIG. 3, the plating solution 12 is dispersed in a shower shape and sprayed. An arbitrary method such as a spray method in which the plating solution 12 is atomized and sprayed can be adopted as appropriate.
[0025]
Next, a plating process performed by the plating apparatus will be described.
First, a predetermined amount of the plating solution 12 is put into the plating tank 16, and the substrate holder 10 holding the substrate W is vertically lowered to a predetermined position where the substrate W is immersed in the plating solution 12 and faces the anode 14. Let it. Then, a plating film is formed on the surface of the substrate W by applying a predetermined plating voltage from the plating power source 18 between the anode 14 and the substrate W. At this time, the paddle 34 is reciprocated in the front-rear direction (left-right direction) in parallel with the substrate W via the driving mechanism 46 to stir the plating solution 12 in the plating tank 16 and simultaneously drive the circulation pump 52, The plating solution 12 is sprayed from the plating solution spray nozzle 48 toward the substrate W held by the substrate holder 10.
[0026]
In this way, the paddle 34 is reciprocated during the plating process to stir the plating solution 12 in the plating tank 16, and at the same time, the plating solution 12 is discharged from the plating solution spray nozzle 48 in synchronization with the reciprocation of the paddle 34. By spraying the substrate W held by the substrate holder 10, the plating solution 12 can be more uniformly applied to the substrate W as a jet from a substantially vertical direction while supplying sufficient ions to the substrate more uniformly. Thereby, the in-plane uniformity of the thickness of the plating film can be further improved.
After the plating is completed, the anode 14 and the substrate W are separated from the plating power source 18, and the substrate holder 10 is pulled up from the plating tank 16 together with the substrate W. Thereafter, a necessary treatment such as rinsing with pure water is performed. Is transported to the next step.
[0027]
For example, a paddle may be attached to a paddle shaft via a ball joint or the like, and the angle at which the paddle is attached may be adjusted to adjust the angle of the plating solution ejected from the plating solution ejection nozzle with respect to the substrate surface. Thereby, for example, according to the size of the concave portion formed on the surface of the substrate, the angle at which the flow of the plating solution hits the substrate surface is arbitrarily adjusted, so that the plating solution is efficiently applied to the concave portion formed on the substrate surface. Can be hit.
Also, as in the conventional example shown in FIG. 16, an overflow tank may be provided, and the plating solution flowing into the overflow tank may be jetted from the plating solution jet nozzle and circulated.
[0028]
FIG. 4 shows another embodiment of the present invention applied to an electroless plating apparatus. The difference from the above-described example of this embodiment is that the electroless plating does not use an external power supply, so that the anode and the plating power supply are omitted, and the plating solution 12 is formed using a reducing agent. In that an electroless plating solution for continuously depositing is used. Other configurations are the same as those in the above-described example.
[0029]
FIG. 5 shows still another embodiment of the present invention applied to an electrolytic plating apparatus. This example is applied to an electrolytic plating apparatus in which an adjustment plate (regulation plate) 60 having a center hole 60a corresponding to the size of the substrate W is arranged between the substrate W held by the substrate holder 10 and the anode 14. It is. That is, by arranging the adjusting plate 60 having the central hole 60a in this manner, the potential of the peripheral portion of the substrate W held by the substrate holder 10 is lowered by the adjusting plate 60, and the thickness of the plating film is made more uniform. It is widely practiced to make In this example, plating is performed on the substrate W held by the substrate holder 10 at, for example, four positions along a diagonal line from the position close to the central hole 60a on the surface of the adjustment plate 60 on the substrate holder 10 side. A plating solution spray nozzle 48 for spraying a solution is attached, and a plating solution flow path (not shown) communicating with the plating solution spray nozzle 48 is provided inside the adjustment plate 60. The paddle 34 may be arranged between the adjustment plate 60 and the substrate holder 10.
As described above, by making the adjusting plate 60 widely provided in the electrolytic plating apparatus also serve as a holding material for holding the plating solution spray nozzle 48, the plating solution spray nozzle 48 can be formed with a relatively simple configuration. It can be arranged at a predetermined position.
[0030]
FIG. 6 is a plan layout view of a substrate processing apparatus provided with the above-described electrolytic plating apparatus. In this substrate processing apparatus, a load / unload unit 510, a pair of cleaning / drying processing units 512, a first substrate stage 514, a bevel etch / chemical cleaning unit 516, a second substrate stage 518, and a substrate W are turned 180 °. A water washing section 520 having functions and four plating sections (electrolytic plating apparatuses) 522 are provided. Further, a first transfer device 524 for transferring the substrate W between the load / unload unit 510, the cleaning / drying processing unit 512, and the first substrate stage 514, a first substrate stage 514, a bevel etch / chemical cleaning unit 516 And a third transfer device 528 for transferring the substrate W between the second substrate stage 518, the second substrate stage 518, the washing unit 520, and the plating unit 522. Provided.
[0031]
The inside of the substrate processing apparatus is partitioned by a partition wall 523 into a plating space 530 and a clean space 540, and the plating space 530 and the clean space 540 can be independently supplied and exhausted. The partition wall 523 is provided with an openable and closable shutter (not shown). Further, the pressure in the clean space 540 is lower than the atmospheric pressure and higher than the pressure in the plating space 530, so that the air in the clean space 540 does not flow out of the plating apparatus, and The air in 530 does not flow into the clean space 540.
[0032]
FIG. 7 shows the flow of the air flow in the substrate processing apparatus. In the clean space 540, fresh external air is taken in from the pipe 543, and this external air is pushed into the clean space 540 through the high-performance filter 544 by a fan, and is washed and dried as clean air of a downflow from the ceiling 545a. It is supplied around the processing section 512 and the bevel etch / chemical solution cleaning section 516. Most of the supplied clean air is returned from the floor 545b to the ceiling 545a through the circulation pipe 552, again pushed into the clean space 540 by the fan through the high-performance filter 544, and circulates in the clean space 540. Part of the airflow is exhausted from the inside of the washing / drying processing section 512 and the inside of the bevel etch / chemical solution washing section 516 by the pipe 546 to the outside. Thus, the pressure inside the clean space 540 is set to a pressure lower than the atmospheric pressure.
[0033]
The plating space 530 in which the water washing section 520 and the plating section 522 are present is not a clean space (contamination zone), but particles are not allowed to adhere to the substrate surface. For this reason, it is possible to prevent particles from adhering to the substrate W by flowing down-flow clean air that is taken in from the pipe 547 and pushed into the plating space 530 by the fan from the ceiling 549a side through the high-performance filter 548. I have. However, if the total flow rate of the clean air forming the downflow depends on the supply and exhaust from the outside, an enormous supply and exhaust amount is required. For this reason, external exhaust is performed from the pipe 553 to such an extent that the inside of the plating space 530 is maintained at a pressure lower than that of the clean space 540 so that most of the downflow airflow is covered by the circulating airflow through the circulation pipe 550 extending from the floor 549b. ing.
[0034]
As a result, the air returning from the circulation pipe 550 to the ceiling 549a is again pushed in by the fan, passes through the high-performance filter 548, is supplied as clean air into the plating space 530, and circulates. Here, air containing chemical mist and gas from the washing unit 520, the plating unit 522, the transport device 528, and the plating solution adjusting tank 551 is discharged to the outside through the pipe 553, and the inside of the plating space 530 is a clean space. The pressure is set lower than 540.
Therefore, when the shutter (not shown) is opened, the air flow between these areas flows in the order of the load / unload section 510, the clean space 540, and the plating space 530. Further, the exhaust gas is exhausted outside through ducts 553 and 546.
[0035]
Next, FIG. 8 shows a plan layout view of a wiring forming apparatus including the electrolytic plating apparatus and the electrolytic etching apparatus configured as described above. The wiring forming apparatus includes a pair of load / unload units 210, a cleaning / drying unit 212, a temporary placing unit 214, a plating unit (electrolytic plating apparatus) 216, a water washing unit 218, and an etching unit 220. Further, a first transport mechanism 222 for transferring the substrate W between the load / unload unit 210, the cleaning / drying unit 212, and the temporary placing unit 214, a temporary placing unit 214, a plating unit 216, a water washing unit 218, A second transport mechanism 224 that transfers the substrate W to and from the etching processing unit 220 is provided.
[0036]
The wiring forming process in this wiring forming apparatus will be described with further reference to FIGS. First, the substrates W having the seed layer formed on the surface thereof are taken out one by one from the loading / unloading section 210 by the first transport mechanism 222 and are carried into the plating processing section 216 via the temporary placing section 214 (Step 1).
[0037]
Next, a plating process is performed in the plating process unit 216 to form a copper layer 7 on the surface of the substrate W as shown in FIG. 10 (Step 2). At this time, the reduction of the dent 7a of the copper layer 7 due to the presence of the large hole is considered as the first priority, and a plating solution having a high leveling property, for example, a high concentration of copper sulfate and a low level of sulfuric acid is used as the plating solution. It has an excellent composition, for example, a composition of copper sulfate 100 to 300 g / l, sulfuric acid 10 to 100 g / l, and contains additives for improving leveling properties, such as polyalkyleneimine, quaternary ammonium salt, and cationic dye. Use things. Here, the leveling property means a property excellent in bottom-up growth in a hole.
[0038]
By plating the surface of the substrate W using a plating solution having excellent leveling properties, bottom-up growth in a large hole is promoted as shown in FIG. Film thickness t ₁ From the thickness t of the copper layer 7 in the large hole. ₂ Is thicker. Thereby, a thin plating film thickness t ₁ It is possible to fill the big hole with.
Then, if necessary, the substrate W after the plating process is transported to the rinsing unit 218 for rinsing, and thereafter, the substrate W after the rinsing is transported to the etching unit 220 (Step 3).
[0039]
Next, the surface of the substrate W (the surface to be plated) is subjected to electrolytic etching by the etching processing unit 220 to etch the copper layer 7 formed on the surface of the substrate W (step 4). At this time, as an etchant, an additive functioning as an etching accelerator, for example, pyrophosphoric acid, ethylenediamine, aminocarboxylic acid, EDTA, DTPA, iminodiacetic acid, TETA, NTA, or an additive functioning as an etching inhibitor, for example, 4 A copper complex compound such as a quaternary ammonium salt, a polymer, an organic complex or a derivative thereof, or a compound containing an additive that lowers the copper corrosion potential such as thiourea or a derivative thereof is used. The base bath may be an acid such as sulfuric acid, hydrochloric acid, sulfuric acid-hydrogen peroxide, or hydrofluoric acid-hydrogen peroxide, or an alkali such as ammonia-hydrogen peroxide, but is not limited thereto.
[0040]
Thereby, the raised portion of the copper layer 7 can be selectively etched, and the flatness of the copper layer 7 can be improved. As a result, in the subsequent CMP processing, it is possible to perform the processing in a short time without increasing the CMP rate, and thus preventing the occurrence of dishing.
Next, if necessary, the substrate W after the etching process is transported to the rinsing unit 218 for rinsing, and then the substrate W after the rinsing is transported to the cleaning / drying unit 212 (Step 5). Then, the substrate W is cleaned and dried by the cleaning / drying unit 212 (Step 6), and thereafter, the substrate W is returned to the cassette of the load / unload unit 210 by the first transport mechanism 222 (Step 7). ).
[0041]
The flatness of the copper film can be further improved by repeating the plating process and the etching process several times and performing selective etching of the raised portion of the copper film for each plating process. Further, in this example, the plating process and the etching process are performed continuously in one wiring forming apparatus, but may be performed individually by independent devices.
[0042]
In addition, as the electrolytic plating apparatus and the electrolytic etching apparatus, those having the same configuration but using different electrolytic solutions and having different polarities of the voltage applied between the substrate W and the electrode plate (anode or cathode) are used. Although it is used, for example, it is used as an electroplating apparatus, and the voltage applied between the substrate W and the anode 14 is changed in polarity so that the substrate W becomes an anode and the anode 14 becomes a cathode. Then, the electrolytic plating apparatus may be used also as the electrolytic etching apparatus.
[0043]
Next, FIG. 11 shows the overall configuration of a semiconductor manufacturing apparatus using the above-described electrolytic plating apparatus. In this apparatus, a first polishing unit 324a and a second polishing unit 324b are arranged on one end of a space on a floor which is entirely rectangular and opposed to left and right, and a substrate W such as a semiconductor wafer is placed on the other end. A pair of loading / unloading sections on which the substrate cassettes 326a and 326b to be stored are placed are arranged. Two transfer robots 328a and 328b are arranged on a line connecting the polishing units 324a and 324b and the load / unload section. Further, on one side along the transport line, a first plating unit (electrolytic plating apparatus) 330 for embedding copper, a copper film thickness inspection unit 332 having a reversing machine, and a plating pretreatment unit 334 having a reversing machine are provided. And a rinsing / drying device 336, a second plating unit (electroless plating device) 338 for forming a protective film, and a cleaning unit 339 having a roll sponge are disposed on the other side. On the transfer line side of the polishing units 324a and 324b, there is provided a vertically movable pusher 342 for transferring the substrate W between the polishing units 324a and 324b.
[0044]
An example of forming a wiring of a semiconductor device by the semiconductor manufacturing apparatus will be described with further reference to FIG. First, as shown in FIG. 12A, for example, a SiO 2 layer is formed on a conductive layer 1a on a semiconductor substrate 1 on which a semiconductor element is formed. ₂ A contact hole 3 and a trench 4 for wiring are formed inside the insulating film 2 by, for example, lithography / etching technology, and a barrier layer 5 made of Ta or TaN is further formed thereon. A substrate W on which a seed layer 6 as a power supply layer for electrolytic plating is formed thereon by sputtering or the like is prepared.
[0045]
The substrates W having the seed layer 6 formed on the surface thereof are taken out one by one from the substrate cassettes 326a and 326b by the transfer robot 328a and carried into the first plating unit 330. Then, in the first plating unit 330, as shown in FIG. 12B, a copper layer 7 is deposited on the surface of the substrate W, and copper is embedded. The copper layer 7 is formed by first performing a hydrophilic treatment on the surface of the substrate W, and then performing copper plating. At this time, as described above, the plating unit 330 may be used as an electrolytic etching apparatus by changing the polarity to etch the surface of the copper layer 7. After the formation of the copper layer 7, rinsing or cleaning is performed in the copper plating unit 330. If time allows, it may be dried.
[0046]
Then, the substrate W in which the copper is embedded is transported to the copper film thickness inspection unit 332, where the thickness of the copper layer 7 is measured, and if necessary, the substrate W is reversed by a reversing machine. By 328b, the wafer is transferred onto the pusher 342 of the polishing unit 324a or 324b.
[0047]
In the polishing unit 324a or 324b, polishing is performed by supplying a polishing liquid while pressing the surface to be polished of the substrate W against the polishing table. Then, for example, when the end point (end point) is detected by the monitor for inspecting the finish of the substrate W, the polishing is terminated, the substrate W after the polishing is returned to the pusher 342 again, and once washed with pure water spray. . Next, the substrate W is transported to the cleaning unit 339 by the transport robot 328b, and the substrate W is cleaned using, for example, a roll sponge. Thus, as shown in FIG. 12C, a wiring 8 including the seed layer 6 and the copper layer 7 is formed inside the insulating film 2.
[0048]
Next, the substrate W is transported to the plating pre-processing unit 334, where the substrate W is subjected to pre-processing such as application of a Pd catalyst or removal of an oxide film on the exposed surface, and then transported to the second plating unit 338. The second plating unit 338 performs an electroless plating process. Thereby, as shown in FIG. 12C, the surface exposed after polishing is subjected to, for example, electroless Co-WP plating, and the exposed surface of the wiring 8 is exposed to the Co-WP alloy film. The wiring 8 is protected by selectively forming a protective film (plating film) 9 made of. The thickness of the protective film 9 is about 0.1 to 500 nm, preferably about 1 to 200 nm, and more preferably about 10 to 100 nm.
[0049]
After the completion of the electroless plating, the substrate W is rotated at a high speed and spin-dried, and then taken out of the second plating unit 338. Next, the substrate W is transported to the cleaning unit 339 by the transport robot 328b, the substrate W is cleaned by, for example, a roll sponge, and further, the substrate W is transported to the rinsing / drying device 336 by the transport robot 328a. Then, after rinsing and drying the substrate W by the rinsing / drying device 336, the substrate W is returned to the original position of the substrate cassettes 326a and 326b.
[0050]
Next, FIG. 13 shows a plan layout view of a substrate processing apparatus in which bumps are formed using the plating bath 16 shown in FIGS. 1 and 2 described above. The substrate processing apparatus includes two cassette tables 112 for mounting a cassette 110 containing substrates such as semiconductor wafers, an aligner 114 for aligning the orientation of a substrate such as an orientation flat or a notch in a predetermined direction, A spin dryer 116 for drying the substrate by rotating it at high speed is provided along the same circumferential direction. Further, at a position along the tangential direction of the circumference, a substrate attaching / detaching portion 120 for mounting the substrate holder 118 and attaching / detaching the substrate to / from the substrate holder 118 is provided. A substrate transfer device 122 composed of a transfer robot that transfers the substrate between them is arranged.
[0051]
Then, in order from the substrate attaching / detaching portion 120 side, a stocker 124 for storing and temporarily placing the substrate holder 118, a pre-wet bath 126 for improving the hydrophilicity of the surface by immersing the substrate in pure water and wetting it, and a surface of the substrate A presoak tank 128 for etching and removing an oxide film having a large electric resistance on the surface of the seed layer formed with a chemical such as sulfuric acid or hydrochloric acid, a first washing tank 130a for washing the surface of the substrate with pure water, and draining the washed substrate. , A second washing tank 130b, and a plating unit 134 are sequentially arranged. The plating unit 134 is configured to house the plurality of plating tanks 16 shown in FIGS. 1 and 2 described above inside the overflow tank 136, and each plating tank 16 stores one substrate therein. The plating is applied. In this example, copper plating will be described, but it goes without saying that the same applies to nickel, solder, and gold plating.
[0052]
Further, a substrate holder transfer device (substrate transfer device) 140 that is located on a side of each of these devices and transfers the substrate holder 118 together with the substrate W between these devices is provided. The substrate holder transport device 140 includes a first transporter 142 that transports a substrate between the substrate attaching / detaching portion 120 and the stocker 124, a stocker 124, a pre-wet tank 126, a pre-soak tank 128, water washing tanks 130a and 130b, and a blower. It has a second transporter 144 that transports the substrate between the tank 132 and the plating unit 134. In this example, the first transporter 142 can move up to the washing tank 130a, and can change the sharing (moving) range with the second transporter 144. Note that only the first transporter 142 may be provided without providing the second transporter 144.
On the opposite side of the overflow tank 136 of the substrate holder transfer device 140, a paddle 34 (see FIGS. 1 and 2) serving as a stirring rod which is located inside each plating tank 16 and stirs the plating solution 12 is provided. ) Is disposed.
[0053]
The substrate attaching / detaching portion 120 includes a flat mounting plate 152 slidable along the rail 150 in the horizontal direction, and the two substrate holders 118 are mounted on the mounting plate 152 in a horizontal state in parallel. Then, after transferring the substrate between the one substrate holder 118 and the substrate transfer device 122, the mounting plate 152 is slid in the horizontal direction, and the transfer between the other substrate holder 118 and the substrate transfer device 122 is performed. The transfer of the substrate is performed between them.
[0054]
A series of bump plating processes by the substrate processing apparatus configured as described above will be described. First, as shown in FIG. 14A, a seed layer 500 as a power supply layer was formed on the surface, and a resist 502 having a height H of, for example, 20 to 120 μm was applied to the entire surface of the seed layer 500. Thereafter, a substrate provided with an opening 502a having a diameter D of, for example, about 20 to 200 μm at a predetermined position of the resist 502 is housed in a cassette 110 with its surface (plated surface) facing upward, and 110 is mounted on the cassette table 112.
One substrate is taken out from the cassette 110 mounted on the cassette table 112 by the substrate transfer device 122 and placed on the aligner 114 to adjust the position of the orientation flat and the notch in a predetermined direction. The substrate aligned by the aligner 114 is transported to the substrate attaching / detaching portion 120 by the substrate transport device 122.
[0055]
In the substrate attaching / detaching section 120, two substrate holders 118 accommodated in the stocker 124 are simultaneously grasped and raised by the grasping mechanism (not shown) of the transporter 142 of the substrate holder transport device 140, and then the substrate attaching / detaching section 120 is moved. The substrate holder 118 is conveyed to 120 and rotated by 90 ° to make the substrate holder 118 horizontal. Thereafter, the two substrate holders 118 are lowered, and are simultaneously mounted on the mounting plate 152 of the substrate attaching / detaching portion 120. At this time, a cylinder (not shown) is operated to keep the substrate holder 118 open.
In this state, the substrate transferred by the substrate transfer device 122 is inserted into the substrate holder 118 located on the center side, the substrate holder 118 is closed, the substrate is mounted, and then the mounting plate 152 is slid in the horizontal direction. Then, the substrate is mounted on the other substrate holder 118, and then the mounting plate 152 is returned to the original position.
[0056]
Next, the two substrate holders 118 on which the substrates are mounted are simultaneously gripped by the gripping mechanism of the transporter 142 of the substrate holder transport device 140, raised, transported to the stocker 124, and rotated by 90 ° to rotate the substrate holder 118. Then, the two substrate holders 118 are suspended and held (temporarily placed) on the stocker 124.
In the transporter 142 of the substrate transport device 122, the substrate attaching / detaching portion 120, and the substrate holder transport device 140, the above operations are sequentially repeated, and the substrates are sequentially mounted on the substrate holders 118 accommodated in the stockers 124. At a predetermined position (temporary placement).
[0057]
On the other hand, in the other transporter 144 of the substrate holder transport device 140, two substrate holders 118 on which the substrates were mounted and temporarily placed on the stocker 124 were simultaneously gripped by this gripping mechanism (not shown) and raised. Thereafter, the substrate is conveyed to the pre-wet tank 126 and then lowered, whereby the two substrate holders 118 are placed in the pre-wet tank 126, for example, are immersed in pure water to wet the surface of the substrate, and Improves hydrophilicity. It is needless to say that the water is not limited to pure water as long as it can wet the surface of the substrate and replace the air in the hole with water to improve the hydrophilicity.
[0058]
Next, the substrate holder 118 on which the substrate is mounted is conveyed to the presoak tank 128 in the same manner as described above, and the substrate is immersed in a chemical solution such as sulfuric acid or hydrochloric acid put in the presoak tank 128, and the electrical resistance of the seed layer surface is reduced. Is etched to expose a clean metal surface. Further, the substrate holder 118 on which the substrate is mounted is transported to the washing tank 130a in the same manner as described above, and the surface of the substrate is washed with pure water in the washing tank 130a.
[0059]
The substrate holder 118 on which the rinsed substrate is mounted is transported to the plating unit 134 in the same manner as described above, and is suspended and held in the plating tank 16. The transporter 144 of the substrate holder transporting apparatus 140 sequentially repeats the above-described operation, and sequentially transports the substrate holders 118 on which the substrates are mounted to the plating tank 16 of the plating unit 134 and suspends the substrate holders at predetermined positions. At this time, the inside of the plating tank 16 is filled with the plating solution, but the plating solution may be filled after the suspension holding of the substrate holder 118 is completed.
[0060]
After the suspension holding of all the substrate holders 118 is completed, a plating voltage is applied between the anode 14 and the substrate W (see FIGS. 1 and 2), and the paddle 34 (see FIGS. 2) is reciprocated in parallel with the surface of the substrate W, and at the same time, the plating solution is sprayed from the plating solution spray nozzle 48 (see FIGS. 1 and 2) provided on the paddle 34 (see FIGS. 1 and 2) toward the substrate W. To apply plating to the surface of the substrate. At this time, the substrate holder 118 is suspended and fixed above the plating tank 16, and power is supplied from the plating power supply to the seed layer 500 (see FIG. 14).
[0061]
After the plating is completed, the application of the plating power supply, the supply of the plating solution, and the reciprocating motion of the paddle are stopped, and two substrate holders 118 on which the substrates after plating are mounted are simultaneously held by the gripping mechanism of the transporter 144 of the substrate holder transport device 140. The user grips and pulls up from the plating tank 16 of the plating unit 134 to stop.
[0062]
Then, in the same manner as described above, the substrate holder 118 is transported to the washing tank 130b, and is immersed in pure water placed in the washing tank 130b to wash the surface of the substrate with pure water. Thereafter, the substrate holder 118 on which the substrate is mounted is transported to the blow tank 132 in the same manner as described above, where water droplets adhered to the substrate holder 118 are removed by blowing air. Thereafter, the substrate holder 118 on which the substrate is mounted is returned to a predetermined position of the stocker 124 and suspended and held in the same manner as described above.
The transporter 144 of the substrate holder transport device 140 sequentially repeats the above operation, and returns the substrate holder 118 on which the plated substrate is mounted to the predetermined position of the stocker 124, and suspends the substrate holder 118.
[0063]
On the other hand, in the other transporter 142 of the substrate holder transport device 140, two substrate holders 118 having the plated substrates mounted thereon and returned to the stocker 124 are simultaneously gripped by this gripping mechanism, and in the same manner as described above. Is mounted on the mounting plate 152 of the substrate attaching / detaching portion 120.
Then, the substrate holder 118 located at the center side is opened, and the substrate after the plating process in the substrate holder 118 is taken out by the substrate transfer device 122, transported to the spin dryer 116, and rinsed, and the spin dryer 116 is rotated at a high speed. The spin-dried (water drained) substrate is returned to the cassette 110 by the substrate transfer device 122. Then, after returning the substrate mounted on one substrate holder 118 to the cassette 110 or in parallel with this, the mounting plate 152 was slid in the horizontal direction, and similarly mounted on the other substrate holder 118. The substrate is rinsed, spin-dried and returned to the cassette 110.
[0064]
After the mounting plate 152 is returned to the original state, the two substrate holders 118 from which the substrates have been taken out are simultaneously held by the holding mechanism of the transporter 142 of the substrate holder transport device 140, and the stocker 124 is held in the same manner as described above. Return to the specified place. Thereafter, the two substrate holders 118 on which the plated substrates have been mounted and returned to the stocker 124 are simultaneously held by the holding mechanism of the transporter 142 of the substrate holder transporting device 140, and the substrate attaching / detaching portion 120 is held in the same manner as described above. The work is placed on the placement plate 152 and the same operation as described above is repeated.
[0065]
Then, all the substrates are taken out from the substrate holder 118 which has been mounted with the plated substrate and returned to the stocker 124, spin-dried and returned to the cassette 110 to complete the operation. Thus, as shown in FIG. 14B, a substrate W in which the plating film 504 is grown in the opening 502a provided in the resist 502 is obtained.
[0066]
Then, the substrate W spin-dried as described above is immersed in a solvent such as acetone at a temperature of, for example, 50 to 60 ° C., and the resist 502 on the substrate W is peeled off as shown in FIG. Then, as shown in FIG. 14D, the unnecessary seed layer 500 exposed to the outside after the plating is removed. Next, by reflowing the plating film 504 formed on the substrate W, as shown in FIG. 14E, bumps 506 which are rounded by surface tension are formed. Further, the substrate W is annealed, for example, at a temperature of 100 ° C. or higher to remove the residual stress in the bump 506.
[0067]
FIG. 15 is a plan view showing another substrate treatment apparatus in which bumps and the like are formed. As shown in FIG. 15, the substrate processing apparatus includes two cassette tables 410 on which cassettes storing substrates such as semiconductor wafers are mounted, and an aligner 412 for aligning the orientation of a substrate such as an orientation flat or a notch in a predetermined direction. And a rinser dryer 414 for rinsing the substrate after the plating process, rotating the substrate at high speed, and drying it. A movable first transfer robot 416 that transfers substrates between the two cassette tables 410 and the aligner 412 and the rinser dryer 414 is disposed between the two cassette tables 410 and the aligner 412 and the rinser dryer 414. The first transfer robot 416 includes, for example, a hand of a vacuum suction or drop type, and transfers a substrate in a horizontal state.
[0068]
Further, in this example, a total of four plating units 420 are arranged and provided in series. Each of these plating units 420 has a plating tank 422 and a washing tank 424 arranged at positions adjacent to each other, and a substrate can be detachably mounted vertically above the plating tank 422 and the washing tank 424. The substrate holder 426 to be held is arranged to be vertically movable via a vertical movement mechanism 428 and to be movable left and right via a left and right movement mechanism 430. A second movable transfer robot 432 that transfers a substrate between the aligner 412, the rinser dryer 414, and the substrate holder 426 of each plating unit 420 is disposed on the front side of the plating unit 420. I have. The second transfer robot 432 includes, for example, a hand having a reversing mechanism 434 for holding the substrate by a mechanical chuck method and reversing the substrate by 90 ° between a horizontal state and a vertical state, and a hand between the aligner 412 and the rinser dryer 414. The substrate is transferred in a vertical state between the substrate and the substrate holder 426 while the substrate is in a horizontal state.
[0069]
When the substrate held by the substrate holder 426 is disposed at a predetermined position in the plating tank 422, an anode 436 is disposed inside each plating tank 422 at a position facing the surface of the substrate. . Further, a paddle 440 which is located between the substrate and the anode 436 and reciprocates in parallel with the substrate to drive the paddle driving device 438 to make the flow of the plating solution uniform and a size of the substrate. An adjusting plate 442 having an appropriate center hole and lowering the potential of the peripheral portion of the substrate to equalize the thickness of the plating film is provided. At least one of the paddle 440 and the adjustment plate 442 is provided with a plating solution spray nozzle 48 (see FIGS. 1, 2, and 5) for spraying a plating solution toward the substrate held by the substrate holder 426. I have.
[0070]
Next, a series of plating processes performed by the substrate processing apparatus having the above-described configuration will be described using a bump process as an example. First, as shown in FIG. 14A, a seed layer 500 as a power supply layer was formed on the surface, and a resist 502 having a height H of, for example, 20 to 120 μm was applied to the entire surface of the seed layer 500. Thereafter, a substrate W provided with an opening 502a having a diameter D of, for example, about 20 to 200 μm at a predetermined position of the resist 502 is accommodated in a cassette with its surface (plated surface) facing upward, and Is mounted on the cassette table 410.
[0071]
Then, one substrate W is taken out from the cassette mounted on the cassette table 410 by the first transfer robot 416 and placed on the aligner 412 to adjust the position of the orientation flat or the notch in a predetermined direction. The substrate W aligned in the direction by the aligner 412 is taken out from the aligner 412 by the second transfer robot 432, and the substrate W is inverted by 90 ° from a horizontal state to a vertical state via an inversion mechanism 434. Is delivered to the substrate holder 426 of any one of the plating units 420.
[0072]
In this example, the delivery of the substrate W is performed above the washing tank 424. That is, the substrate W is lifted by the up-down movement mechanism 428, and is received by the second transfer robot 432 and held in a vertical state by the substrate holder 426 that has been positioned on the washing tank 424 side by the left-right movement mechanism 430.
[0073]
The substrate holder 426 holding the substrate W in a vertical state is moved to the plating tank 422 side by the left-right movement mechanism 430. On the other hand, the plating bath 422 is filled with a plating solution. In this state, the substrate holder 426 holding the substrate W is lowered via the vertical movement mechanism 428, and the substrate W held by the substrate holder 426 is immersed in the plating solution in the plating tank 422, and the anode 436 And a substrate W, a plating voltage is applied, and a paddle 440 is reciprocated in parallel with the surface of the substrate W by a paddle driving device 438, and at the same time, a plating solution spray nozzle provided on at least one of the paddle 440 and the adjustment plate 442. The surface of the substrate W is plated by injecting a plating solution from the substrate W toward the substrate.
After the plating is completed, the application of the plating voltage, the supply of the plating solution, and the reciprocating motion of the paddle are stopped, and the substrate holder 426 holding the substrate W after plating is raised via the vertical movement mechanism 428, and the plating tank is moved. Pull up from 422.
[0074]
After this plating process, the substrate holder 426 holding the substrate W in a vertical state is moved to the washing tank 424 by the left-right movement mechanism 430. Then, the substrate holder 426 holding the substrate W is temporarily lowered to the inside of the washing tank 424 via the vertical movement mechanism unit 428, and the pure water is directed upward from the injection nozzle (not shown) toward the substrate holder 426 while being lifted. Or the inside of the washing tank 424 is filled with pure water, a substrate holder 426 holding the substrate W is put in the pure water, and then the pure water in the washing tank 424 is quickly pulled out. Then, the plating solution attached to the substrate W and the substrate holder 426 is washed away with pure water. Of course, both may be combined.
[0075]
Then, the second transfer robot 432 receives the washed substrate W from the substrate holder 426 in a vertical state above the washing tank 424, and inverts the received substrate W from the vertical state to a horizontal state by 90 °. The inverted substrate W is transported to and mounted on the rinser dryer 414.
The substrate W that has been rinsed and spin-dried (drained) by high-speed rotation by the rinser dryer 414 is returned to the cassette mounted on the cassette table 410 to complete the operation. Thus, as shown in FIG. 14B, a substrate W in which the plating film 504 is grown in the opening 502a provided in the resist 502 is obtained.
[0076]
【The invention's effect】
As described above, according to the present invention, the plating solution spray nozzle is moved along the surface to be plated of the material to be plated, and the plating solution is sprayed from the nozzle to the surface of the material to be plated. However, by applying the jet more uniformly from a substantially perpendicular direction, the in-plane uniformity of the thickness of the plating film can be further improved.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing an outline of an embodiment of the present invention applied to an electrolytic plating apparatus.
FIG. 2 is a plan view of FIG.
FIG. 3 is a view showing a different injection form of a plating solution injection nozzle.
FIG. 4 is a plan view (corresponding to FIG. 2) showing another embodiment of the present invention applied to an electroless plating apparatus.
FIG. 5 is a vertical sectional view (corresponding to FIG. 1) showing an outline of still another embodiment of the present invention applied to an electrolytic plating apparatus.
FIG. 6 is a plan layout view of a substrate processing apparatus provided with an electrolytic plating apparatus.
FIG. 7 is a diagram showing a flow of an air flow of the substrate processing apparatus shown in FIG.
FIG. 8 is a plan layout view of a wiring forming apparatus including an electrolytic plating apparatus and an electrolytic etching apparatus.
9 is a diagram showing a flow of processing steps in the wiring forming apparatus shown in FIG.
FIG. 10 is a cross-sectional view conceptually showing a process of performing a plating process on a substrate.
FIG. 11 is a plan layout view of a semiconductor manufacturing apparatus including an electrolytic plating apparatus and an electroless plating apparatus.
FIG. 12 is a diagram showing an example of wiring formation in a semiconductor device in the order of steps.
FIG. 13 is a plan layout view of another substrate processing apparatus provided with an electrolytic plating apparatus.
FIG. 14 is a cross-sectional view showing a process of forming a bump (protruding electrode) on a substrate in the order of steps.
FIG. 15 is a plan layout view of still another substrate processing apparatus provided with an electrolytic plating apparatus.
FIG. 16 is a schematic view of a conventional plating apparatus (electrolytic plating apparatus).
[Explanation of symbols]
10,118,426 Substrate holder
12 Plating solution
14,436 anode
16,422 Plating tank
18 Power supply
32 paddle shaft
34,440 paddles
46,146,438 Paddle drive mechanism
48 Plating solution spray nozzle
50 Plating solution flow path
52 Circulation pump
54 Flow controller
56 Plating solution circulation line
60,442 Adjustment plate

Claims (11)

Plating characterized by disposing a plating solution spray nozzle for spraying a plating solution toward a surface to be plated of a material to be plated, which is vertically arranged inside the plating bath, inside a plating bath holding a plating solution. apparatus. The plating apparatus according to claim 1, wherein the plating solution spray nozzle relatively moves in parallel with a surface to be plated of the material to be plated. 3. The plating solution spray nozzle according to claim 1, wherein the plating solution spray nozzle is disposed between the plating target material and an anode arranged in contact with the plating solution so as to face the plating target material. Plating equipment. The plating solution spray nozzle is disposed at a position facing the surface to be plated of the material to be plated, and is provided on a paddle that moves along the surface to be plated and stirs the plating solution in the plating tank. The plating apparatus according to claim 1, wherein: 2. The plating apparatus according to claim 1, wherein the plating solution spray nozzle is attached to an adjustment plate disposed between the material to be plated and an anode facing the material to be plated. 3. The plating apparatus according to any one of claims 1 to 5, wherein an angle of the plating solution spray nozzle with respect to a surface to be plated of a plating solution sprayed from the plating solution spray nozzle is adjustable. . The plating apparatus according to any one of claims 1 to 6, wherein the plating solution in the plating tank is circulated and ejected from the plating solution ejection nozzle. The plating apparatus according to claim 7, further comprising a flow rate adjusting unit configured to adjust a flow rate of the plating solution injected from the plating solution injection nozzle. The plating apparatus according to any one of claims 1 to 8, wherein the plating solution spray nozzle is a nozzle row in which a plurality of nozzles are arranged. Placing the material to be plated in the plating tank holding the plating solution with the surface to be plated almost vertically,
The anode is placed in contact with the plating solution facing the material to be plated,
Placing a plating solution spray nozzle that sprays a plating solution toward the surface to be plated of the material to be plated between the material to be plated and the anode,
Injecting a plating solution from the plating solution spray nozzle toward the surface to be plated of the material to be plated while relatively moving the plating solution spray nozzle and the material to be plated in parallel with the surface to be plated,
A plating method in which a plating current is passed between the anode and the material to be plated to perform plating on a surface to be plated of the material to be plated. The plating method according to claim 10, wherein the relative movement of the plating solution spray nozzle and the material to be plated in parallel with the surface to be plated is a reciprocating motion parallel to the surface to be plated.

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