JP2005226119A - Substrate treatment method, plating method and plating apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plating apparatus which stably forms a reliable plated film free from plating defect such as a chipping of the film and an unplated spot. <P>SOLUTION: The plating apparatus 1 comprises: a plating chamber 11 for forming the plated film on the surface of a substrate by contacting the surface of the substrate with a plating liquid; and a steam treatment chamber 8 for treating the surface of the substrate with water vapor, prior to plating treatment in the plating chamber 11. The plating apparatus 1 further comprises: an acid treatment chamber 9 for treating the surface of the substrate which has been treated with water vapor in the steam treatment chamber 8, with an acidic liquid; and an apparatus frame 2 for accommodating the plating chamber 11, the steam treatment chamber 8 and the acid treatment chamber 9. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention provides a series of platings inside fine holes or grooves formed in a substrate (hereinafter simply referred to as “substrate”) such as a lead frame, a printed circuit board, a flexible substrate, a tape substrate, and a semiconductor wafer, which are electronic device components. The present invention relates to a substrate processing method for performing a wet process such as coating and etching, and more particularly, to a plating method and apparatus used for forming a film such as a metal or wiring on an LSI (integrated circuit) substrate.

  In recent years, a method of forming a metal film or an organic film, or a wiring or bump (projection-like connection electrode terminal) on a silicon wafer or other substrate using a plating technique in a method of forming a wiring or a bump of a semiconductor circuit. Has come to be used. For example, wiring, bumps are formed by stacking gold, silver, copper, solder, nickel, or a multilayer of these at predetermined locations on the surface of a semiconductor wafer on which semiconductor circuits and fine wiring connecting them are formed. It is widely performed to connect to an electrode of a package substrate or a TAB (Tape Automated Bonding) electrode via the.

  There are various methods such as electroplating, electroless plating, vapor deposition, and printing as methods for forming these wirings and bumps. An electroplating method that can cope with such a situation and has a high film deposition rate has been increasingly used. The electroplating method that is most frequently used at present is characterized in that the film thickness control is relatively simple, a high-purity metal film is obtained, and the film formation speed is high.

  On the other hand, the electroless plating method is characterized in that it is not necessary to form a seed film for energization on the substrate, so that the number of steps required for forming wirings and bumps can be reduced. In forming a film on a semiconductor substrate, it is strictly required to improve the uniformity of film thickness, improve the film quality, and reduce the manufacturing cost. Therefore, many improvements have been studied in any plating method. .

  In addition, as one of the circuit formation methods for LSI substrates and fine electric circuit boards, wiring patterns and bump patterns are transferred to a photosensitive polymer film (resist or photoresist) with a pattern transfer device (generally an exposure device). However, a method of forming wirings and bumps by plating is often used. In this case, after the pattern is transferred to the surface of the resist, development processing is performed to remove the resist in a desired region, thereby forming a plating pattern. The surface of the plating base film exposed to the outside after the resist is removed by the transfer of the pattern, that is, the surface of the region in contact with the plating solution is required to be a clean surface free from foreign matter.

  In general, a resist that is a photosensitive polymer is not easily wetted by a plating solution during plating, that is, has poor wettability, and some have high water repellency. In the case where the wettability of the resist surface is poor, a phenomenon in which plating defects occur due to the trapping of bubbles in the fine pattern is often seen. In particular, as the number of I / Os in semiconductor chips increases, the pitch becomes narrower, and miniaturization, pre-plating treatment to remove bubbles in such fine patterns on the substrate has become increasingly important. Yes.

  In addition, when a plating film is formed in a fine wiring groove or plug provided on a substrate such as a semiconductor wafer or in an opening of a resist having poor wettability, the plating solution or pretreatment liquid is used for the fine wiring groove or plug. Without entering the plug and resist openings, air bubbles are formed in the plating solution and the pretreatment liquid, and these air bubbles tend to remain in the wiring grooves, plugs, and resist openings. Such bubbles cause plating defects such as missing plating and missing plating.

  In order to prevent such plating defects and plating omissions, a surface active agent is added to the plating solution to lower the surface tension of the plating solution, so that the plating solution can be applied to fine wiring grooves, plugs, and resist openings on the substrate. Invasion is also carried out. However, there is a problem that bubbles are easily generated in the plating solution during circulation due to a decrease in the surface tension of the plating solution. In addition, by adding a new surfactant to the plating solution, there is a problem that abnormalities occur in the plating deposition, and the amount of organic substances taken into the plating film increases, which may adversely affect the characteristics of the plating film. .

  Therefore, in order to perform good plating without defects, it is necessary to remove bubbles from the surface of the substrate before the plating process. LSI substrates and fine electric circuit boards are generally handled in a clean environment, but their circuit patterns are becoming increasingly finer, and photosensitive polymer resists are generally hydrophobic. Therefore, the adhesion of slight bubbles to the surface to be plated can be a serious defect. For this reason, it is necessary to perform a pretreatment immediately before plating and to wet the fine wiring grooves, plugs and resist openings well with the plating solution (deaeration treatment).

  The present invention has been made in view of such problems of the prior art, and a substrate processing method capable of stably obtaining a film inside a fine or ultrafine hole or groove formed on the surface of the substrate. It is a first object to provide

  The second object of the present invention is to provide a plating method and apparatus which can stably provide highly reliable film deposition without plating defects such as lack of plating or missing plating.

  According to the first aspect of the present invention, there is provided a substrate processing method capable of stably obtaining a film inside a fine or ultrafine hole or groove formed on the surface of a substrate. In this substrate processing method, fine or ultra fine holes are formed on the surface of the substrate by performing a vapor treatment using vapor on the surface of the substrate and performing a wet process such as plating on the surface of the substrate after the vapor treatment. Alternatively, the film is attached to the inside of the groove.

  According to the 2nd aspect of this invention, the plating method which can perform favorable plating without plating defects, such as lack of plating and plating omission, is obtained. In this plating method, a vapor treatment using vapor is performed on the surface of the substrate, and a plating treatment is performed in which the surface of the substrate after the vapor treatment is brought into contact with a plating solution to form a plating film on the surface of the substrate. Here, the steam is preferably steam generated from pure water or pure water to which a surfactant is added.

  According to a preferred aspect of the present invention, an acid treatment is performed to treat the surface of the substrate after the steam treatment with an acid solution before the plating treatment. The substrate preferably has an organic resist film having a predetermined pattern formed on the surface.

  According to the 3rd aspect of this invention, the plating apparatus which can perform favorable plating without plating defects, such as lack of plating and plating omission, is obtained. This plating apparatus forms a plating film on the surface of the substrate by bringing the surface of the substrate in contact with the vapor processing chamber for performing the vapor treatment using the vapor on the surface of the substrate and the surface of the substrate after the vapor treatment in the vapor processing chamber. And a plating chamber. The plating apparatus includes at least the plating chamber and an apparatus frame that accommodates the steam processing chamber. Here, the steam is preferably steam generated from pure water or pure water to which a surfactant is added.

  According to a preferred aspect of the present invention, the plating apparatus further includes an acid treatment chamber that performs acid treatment on the surface of the substrate after the vapor treatment in the vapor treatment chamber using an acidic liquid.

  According to another preferred aspect of the present invention, the plating chamber applies a voltage between a plating tank that holds the plating solution, an anode disposed opposite to the substrate, and the substrate and the anode. A power source is provided and electrolytic plating is performed.

  According to a preferred aspect of the present invention, the plating apparatus further includes a transport device that transports the substrate while holding the substrate horizontally inside the device frame.

  According to another preferable aspect of the present invention, the plating apparatus divides the interior of the apparatus frame into a dry station area and at least a wet station area in which the plating chamber and the steam treatment chamber are disposed, The apparatus further includes a first transport device that transports the substrate while holding the substrate horizontally inside the station area, and a second transport device that transports the substrate while holding the substrate vertically within the wet station area. In this case, it is preferable to provide a partition plate that divides the inside of the steam device frame into a dry station area and a wet station area.

  According to the first aspect of the present invention, the wettability of the surface of the substrate can be improved by subjecting the surface of the substrate to vapor treatment with steam before the wet process. In other words, the vapor molecule movement (water molecule movement) easily and instantaneously soaks into the pores and fine grooves up to the nano-order, and the surface of the fine pores and fine grooves has a monolayer or more liquid. A film can be formed. Formation of this liquid film hydrophilizes the substrate, the contact angle with the treatment liquid is reduced in the subsequent wet process, and formation of bubbles can also be prevented.

Further, according to the second and third aspects of the present invention, the surface of the substrate (surface to be plated) can be subjected to steam treatment with steam before plating to improve the wettability of the surface of the substrate. That is, by performing such a vapor treatment, a resist or the like on the surface (surface to be plated) of the substrate is activated, and OH ⁻ which is a hydrophilic group is increased on this surface to improve the wettability of the surface of the substrate. be able to. Therefore, there is no plating defect such as lack of plating or missing plating, and a highly reliable plating process can be realized.

  Hereinafter, embodiments of a plating apparatus according to the present invention will be described in detail with reference to FIGS. 1 to 9. 1 to 9, the same or corresponding components are denoted by the same reference numerals, and redundant description is omitted.

  FIG. 1 is a plan view showing a plating apparatus 1 according to the first embodiment of the present invention. The plating apparatus 1 performs processing by holding a substrate (not shown) such as a semiconductor wafer horizontally in each process. As shown in FIG. 1, the plating apparatus 1 has a rectangular apparatus frame 2, and the apparatus frame 2 has two load units for mounting a substrate cassette (not shown) containing a large number of substrates. An unload chamber 3 is connected. An operation panel 20 that is used when an operator operates the plating apparatus 1 is attached to the side surface of the apparatus frame 2.

  The inside of the apparatus frame 2 is partitioned into a dry station area 24 and a wet station area 26 by a partition plate 22. A temporary table 28 for transferring a substrate between the dry station area 24 and the wet station area 26 is disposed at a position where the dry station area 24 and the wet station area 26 are separated.

  Inside the dry station area 24, a first transfer robot 4 that holds and transfers the substrate horizontally in the dry station area 24, and an aligner 5 that checks the direction of the substrate and aligns it in a predetermined direction before plating. Three cleaning / drying chambers 6 for cleaning and drying the substrate are arranged. Further, inside the wet station area 26, a second transfer robot 7 that holds and transfers the substrate horizontally in the wet station area 26, and a steam processing chamber 8 that performs a steam process on the surface (surface to be plated) of the substrate. An acid treatment chamber 9 for treating the surface of the substrate with an acidic solution, a cleaning chamber 10 for washing the substrate, and two plating chambers 11 for performing a plating treatment on the surface of the substrate are arranged.

  FIG. 2 is a schematic diagram showing the steam processing chamber 8 in the wet station area 26. The steam processing chamber 8 is for improving the wettability of the surface of the substrate by subjecting the surface of the substrate (surface to be plated) to steam processing with steam. As shown in FIG. 2, the steam processing chamber 8 includes a cell 81 that holds pure water 80 and a heater 82 that heats the pure water 80 and generates steam. For example, as steam, steam generated from pure water or pure water to which a surfactant is added can be used. Such a vapor treatment is particularly effective when an organic resist film is applied to the surface (surface to be plated) of the substrate, and a pattern such as a wiring or a bump is formed on the resist film. For example, this steam treatment is performed at a temperature of 30 to 100 ° C., preferably 50 to 70 ° C. for a few seconds to 10 minutes, preferably 0.3 minutes to 1 minute.

That is, by performing such a vapor treatment, the resist and UBM (Under Bump Metal) on the surface (surface to be plated) of the substrate are activated, and the surface of the substrate is increased by increasing OH ⁻ which is a hydrophilic group on the surface. The wettability can be improved. As a result, a water film can be instantaneously formed on the surface of the resist or UBM without leaving bubbles. By performing the plating treatment after such a water film is formed, the contact angle between the plating solution and the resist or UBM is reduced, and the wettability of the plating solution into the fine pattern can be greatly improved. it can. Therefore, good plating without plating defects can be realized.

  Such a vapor treatment can be performed not only as a pretreatment for plating but also as a pretreatment for various wet processes. By performing vapor treatment on the surface of the substrate before the wet process, the wettability of the surface of the substrate can be improved. In other words, due to the vapor molecular motion (water molecular motion), the vapor easily and instantaneously penetrates into the pores and fine grooves (several nanometers or more) formed in the substrate, and the surface of the pores or fine grooves is formed. A liquid film having a monomolecular layer or more can be formed. Formation of this liquid film hydrophilizes the substrate, the contact angle with the treatment liquid is reduced in the subsequent wet process, and formation of bubbles can also be prevented.

  FIG. 3 is a schematic diagram showing the acid treatment chamber 9 in the wet station area 26. As shown in FIG. 3, the acid treatment chamber 9 includes a rotatable turntable 90, a substrate chuck 91 attached to the upper surface of the turntable 90, a spray nozzle 92 disposed above the turntable 90, A turntable 90 and a side wall 93 surrounding the spray nozzle 92 are provided. The substrate chuck 91 holds the substrate W horizontally while holding the peripheral edge of the substrate W and with the surface (surface to be plated) of the substrate W facing upward. The substrate W held by the substrate chuck 91 rotates as the turntable 90 rotates. The spray nozzle 92 has a large number of spray heads 94 directed downward, and the acidic liquid 95 is sprayed from the spray head 94 onto the surface of the substrate W. Note that the side wall 93 is movable up and down via a slider 96. The acidic liquid 95 is selected according to the post-treatment liquid, and is, for example, an acidic bath such as 0-20%, preferably 5-10% dilute sulfuric acid or methanesulfonic acid. This acid treatment may not be performed.

  In the acid processing chamber 9 having such a configuration, the substrate W held by the substrate chuck 91 is rotated, and the acidic liquid 95 is sprayed from the spray head 94 toward the surface (surface to be plated) of the substrate W. Thereby, the surface of the substrate W can be activated by bringing the acidic liquid 95 into contact with the surface of the substrate W. Thus, by activating the plating base film and performing plating on the activated base film, the adhesion of the plating film to the base film (the surface of the substrate W) can be completed. Therefore, good plating without plating defects can be realized more effectively.

  FIG. 4 is a schematic diagram showing the plating chamber 11 in the wet station area 26. As shown in FIG. 4, the plating chamber 11 includes a plating tank 110 that holds a plating solution Q therein, and a substrate head 111 that holds the substrate W horizontally with the surface (surface to be plated) of the substrate W facing downward. A nozzle 112 provided at the bottom of the plating tank 110, an anode 113 disposed horizontally at the bottom of the plating tank 110, and a power source 115 connected to the substrate W and the anode 113 via the lead wires 114a and 114b, respectively. And.

  A plating solution Q is supplied into the plating vessel 110 from a nozzle 112 provided at the bottom of the plating vessel 110, and the surface of the substrate W held by the substrate head 111 is in contact with the plating solution Q. The plating solution Q supplied from the nozzle 112 flows outward along the surface of the substrate W, then overflows the plating tank 110 and flows into an overflow tank 116 provided outside the plating tank 110. The plating solution Q that has flowed into the overflow tank 116 is discharged through the plating solution discharge port 117, circulated by a circulation pump (not shown), and supplied from the nozzle 112. The plating chamber 11 can be provided with a temperature adjusting device for adjusting the temperature of the plating solution, a filter for removing suspended dust in the plating solution, and the like.

  In the present embodiment, the substrate W is connected to the cathode of the power source 115, and the anode 113 is connected to the anode of the power source 115. In this state, by bringing the plating solution Q into contact with the surface of the substrate W, metal is deposited on the surface of the substrate W to form a metal film. Note that a plate-like soluble anode is generally used as the anode 113, and the anode 113 is thinned simultaneously with supplying metal ions to the surface of the substrate W as the plating process proceeds.

  In the plating apparatus 1 having such a configuration, the first transfer robot 4 takes out the substrate from the substrate cassette mounted in the load / unload chamber 3 and transfers the substrate to the aligner 5. In the aligner 5, the orientation of the substrate is aligned by aligning the position of the orientation flat or notch of the substrate with a predetermined direction. Then, the substrate is taken out from the aligner 5 by the first transfer robot 4 and transferred to a temporary table 28 provided between the dry station area 24 and the wet station area 26.

  The substrate placed on the temporary table 28 is transported to the steam processing chamber 8 by the second transport robot 7 in the wet station area 26. In the steam processing chamber 8, as described above, the surface of the substrate (surface to be plated) is subjected to steam processing. Thereafter, the substrate is transported to the acid treatment chamber 9 by the second transport robot 7, and the surface thereof is treated with an acidic liquid and activated. The acid-treated substrate is transferred to the cleaning chamber 10 where the surface of the substrate is cleaned. Thereafter, the substrate is transported to the plating chamber 11 where plating is performed. After the completion of plating, the substrate is again placed on the temporary table 28 by the second transfer robot 7.

  The substrate placed on the temporary table 28 is transported to the cleaning / drying chamber 6 by the first transport robot 4 in the dry station area 24, cleaned and dried here, and then the substrate in the load / unload chamber 3. Returned to cassette. Thus, according to the plating apparatus 1 which concerns on this embodiment, a predetermined plating film (metal film) can be fully automatically formed on the surface of a board | substrate.

  In the present embodiment, as described above, after the vapor treatment is performed on the surface of the substrate in the vapor treatment chamber 8, the plating treatment is performed in the plating chamber 11. By doing in this way, when a board | substrate contacts the plating solution Q in the plating tank 110, there is no plating defect, without producing the micro bubble (micro air void) which causes a plating defect on a to-be-plated surface. Good plating can be realized. Thus, it can be said that performing the activation treatment of the surface to be plated by steam treatment immediately before plating is effective for eliminating plating defects and performing good plating.

  FIG. 5 is a plan view showing a plating apparatus 201 according to the second embodiment of the present invention. The plating apparatus 201 performs processing by holding the substrate horizontally before and after loading and unloading the substrate from a substrate cassette (not shown), and holding the substrate vertically in the process including the plating process. It is. As shown in FIG. 5, the plating apparatus 201 has a rectangular apparatus frame 202 to which the operation panel 20 is attached. Inside the apparatus frame 202, a dry station area 224 and a wet station area 226 are separated by a partition plate 222. It is divided into. Two substrate mounting tables 228 for mounting the substrate on the substrate holder are arranged side by side at a position that divides the dry station area 224 and the wet station area 226. Further, the first transfer robot 4 in the dry station area 224 holds and transfers the substrate horizontally inside the dry station area 224, as in the first embodiment.

  Inside the wet station area 226, a steam processing chamber 208 that performs steam processing on the surface (surface to be plated) of the substrate, an acid processing chamber 209 that processes the surface of the substrate with an acidic liquid, and two cleanings that clean the substrate Chambers 210a and 210b, a plating chamber 211 that performs plating on the surface of the substrate, a stocker 212 that stores and temporarily stores the substrate holder, and a blow chamber 213 that drains the substrate are disposed.

  As shown in FIG. 5, a transfer rail 214 is laid in the wet station area 226, and a second transfer robot 215 and a third transfer robot 216 are installed on the transfer rail 214. As described above, the second transfer robot 215 and the third transfer robot 216 travel linearly along the transfer rail 214. The second transfer robot 215 and the third transfer robot 216 are arranged between the substrate mounting table 228, the stocker 212, the steam processing chamber 208, the acid processing chamber 209, the cleaning chamber 210a, the plating chamber 211, the cleaning chamber 210b, and the blow chamber 213. The substrate holder with the substrate mounted thereon is transported, and the substrate is transported while being held vertically in the wet station area 226.

  FIG. 6 is a schematic diagram showing the substrate holder 217 in the wet station area 226. The second transfer robot 215 and the third transfer robot 216 are configured so that the posture of the substrate holder 217 on which the substrate W is mounted can be changed from a horizontal posture on the substrate mounting table 228 to a vertical posture. In each of the processing chambers 208 to 213 in the wet station area 226, each processing is performed with the substrate holder 217 in a vertical posture by the second transfer robot 215 and the third transfer robot 216.

  FIG. 7 is a schematic diagram showing the steam processing chamber 208 in the wet station area 226. In the vapor treatment chamber 208, as with the vapor treatment chamber 8 in the first embodiment, the substrate surface (surface to be plated) is subjected to vapor treatment with vapor to improve the wettability of the substrate surface. As shown in FIG. 7, the steam processing chamber 208 includes a cell 281 that holds pure water 80 and a heater 282 that heats the pure water 80 and generates steam. The substrate W held in a vertical posture by the substrate holder 217 is introduced into the cell 281 and subjected to steam treatment on the surface thereof.

  FIG. 8 is a schematic diagram showing the acid treatment chamber 209 in the wet station area 226. As shown in FIG. 8, the acid treatment chamber 209 includes an acid treatment tank 290 that stores an acidic solution, a liquid supply pipe 291 immersed in the acid treatment tank 290, and a liquid discharge connected to the bottom of the acid treatment tank 290. A tube 292 is provided. The liquid supply pipe 291 is provided with a plurality of injection nozzles 293. The spray nozzle 293 is disposed inside the acid treatment tank 290 so as to face the substrate W held in a vertical posture by the substrate holder 217, and is directed from the spray nozzle 293 toward the substrate W held by the substrate holder 217. Then, the acidic liquid 294 is sprayed. The acidic liquid 294 sprayed toward the substrate W is discharged to the outside from a liquid discharge pipe 292 at the bottom of the acid treatment tank 290.

  FIG. 9 is a schematic diagram showing the plating chamber 211 in the wet station area 226. As shown in FIG. 9, the plating chamber 211 includes a plating tank 310 that holds a plating solution Q therein, a nozzle 311 provided at the bottom of the plating tank 310, an anode holder 313 that holds an anode 312 and a conductor 314a. And a power source 315 connected to the substrate W and the anode 312 via the conductive wire 314b. The substrate W held by the substrate holder 217 and the anode 312 held by the anode holder 313 are held vertically while being immersed in the plating solution Q in the plating chamber 211, and the surface of the substrate W (surface to be plated). Are arranged parallel to each other so as to face the surface of the anode 312.

  Furthermore, between the substrate W held by the substrate holder 217 and the anode 312 held by the anode holder 313, an agitation paddle 317 attached to the paddle shaft 316 and an adjustment plate (regulation plate) 318 having a central hole are provided. Is arranged. The stirring paddle 317 moves in parallel with the substrate W as the paddle shaft 316 moves, and stirs the plating solution Q.

  A plating solution Q is supplied from the nozzle 311 provided at the bottom of the plating tank 310 into the plating tank 310, and the surface of the substrate W held by the substrate holder 217 comes into contact with the plating solution Q. The plating solution Q supplied from the nozzle 311 overflows the overflow weir 319 and flows into an overflow tank 320 provided outside the plating tank 310. The plating solution Q flowing into the overflow tank 320 is discharged through the plating solution discharge port 321, circulated by the circulation pump 322, and supplied from the nozzle 311 through the thermostatic device 323 and the filter 324. A pressure gauge 325 and a flow meter 326 are attached to the circulation path of the plating solution Q.

  In the present embodiment, the substrate W is connected to the cathode of the power source 315, and the anode 312 is connected to the anode of the power source 315. As a result, a potential difference is generated between the substrate W and the anode 312, the metal ions in the plating solution Q receive electrons from the surface (surface to be plated) of the substrate W, and the metal is deposited on the surface to be plated of the substrate W. To form a metal film. In addition, due to this potential difference, the anode 312 emits electrons to be ionized and dissolves in the plating solution Q. As the anode 312 is dissolved, the anode 312 is thinned.

  In the plating apparatus 201 having such a configuration, the first transfer robot 4 takes out the substrate from the substrate cassette mounted in the load / unload chamber 3 and transfers the substrate to the aligner 5 as in the first embodiment. To do. In the aligner 5, the orientation of the substrate is aligned by aligning the position of the orientation flat or notch of the substrate with a predetermined direction. Then, the substrate is taken out of the aligner 5 by the first transfer robot 4 and transferred to the substrate mounting table 228 for mounting on the substrate holder 217.

  In the substrate mounting table 228, the substrate is mounted on the substrate holder 217 (see FIG. 6), and the substrate holder 217 mounted with the substrate is transferred to the stocker 212 by the second transfer robot 215 in the wet station area 226 and stored in the stocker 212. Stocked in a vertical position. Thereafter, the substrate holder 217 in the stocker 212 is transferred to the vapor processing chamber 208 by the third transfer robot 216. In the steam processing chamber 208, as described above, the surface of the substrate (surface to be plated) is subjected to steam processing. Thereafter, the substrate is transferred to the acid treatment chamber 209 by the third transfer robot 216, and the surface thereof is treated with an acid solution and activated. The substrate subjected to the acid treatment is transferred to the cleaning chamber 210a by the third transfer robot 216, where the surface of the substrate is cleaned. In this way, the pretreatment of the substrate is completed.

  The substrate for which the pretreatment has been completed is transferred to the plating chamber 211 by the third transfer robot 216, where film deposition by plating is performed. Thereafter, the substrate is stocked in a vertical posture in the stocker 212 through the cleaning chamber 210b and the blow chamber 213 by the third transfer robot 216. Thereafter, the substrate holder 217 in the stocker 212 is transported to the substrate mounting table 228 by the second transport robot 215. In the substrate mounting table 228, the substrate is taken out from the substrate holder 217, transported to the cleaning / drying chamber 6 by the first transport robot 4 in the dry station area 224, cleaned and dried here, and then loaded / unloaded. Returned to chamber 3 substrate cassette. Thus, according to the plating apparatus 201 according to the present embodiment, a predetermined plating film (metal film) can be formed on the surface of the substrate fully automatically.

  Although one embodiment of the present invention has been described so far, it is needless to say that the present invention is not limited to the above-described embodiment, and may be implemented in various forms within the scope of the technical idea.

It is a top view which shows the plating apparatus in the 1st Embodiment of this invention. It is a schematic diagram which shows the steam processing chamber in the plating apparatus shown in FIG. It is a schematic diagram which shows the acid treatment chamber in the plating apparatus shown in FIG. It is a schematic diagram which shows the plating chamber in the plating apparatus shown in FIG. It is a top view which shows the plating apparatus in the 2nd Embodiment of this invention. It is a schematic diagram which shows the board | substrate holder in the plating apparatus shown in FIG. It is a schematic diagram which shows the acid treatment chamber in the plating apparatus shown in FIG. It is a schematic diagram which shows the acid treatment chamber in the plating apparatus shown in FIG. It is a schematic diagram which shows the plating chamber in the plating apparatus shown in FIG.

Explanation of symbols

1,201 Plating equipment 2,202 Equipment frame 3 Load / unload chamber 4, 7,215,216 Transfer robot 5 Aligner 6 Cleaning / drying chamber 8,208 Steam processing chamber 9,209 Acid processing chamber 10, 210a, 210b Cleaning Chamber 11, 21 Plating chamber 20 Operation panel 22, 222 Partition plate 24, 224 Dry station area 26, 226 Wet station area 28 Temporary table 212 Stocker 213 Blow chamber 214 Transport rail 217 Substrate holder 228 Substrate mounting table

Claims (12)

We perform steam treatment using steam on the surface of the substrate,
A substrate processing method comprising performing a wet process on the surface of the substrate after the vapor treatment. We perform steam treatment using steam on the surface of the substrate,
A plating method comprising: performing a plating process in which a surface of the substrate after the vapor treatment is brought into contact with a plating solution to form a plating film on the surface of the substrate.   The plating method according to claim 2, wherein the steam is steam generated from either pure water or pure water to which a surfactant is added.   4. The plating method according to claim 2, wherein an acid treatment is performed to treat the surface of the substrate after the vapor treatment with an acid solution before the plating treatment. 5.   The plating method according to claim 2, wherein the substrate has an organic resist film having a predetermined pattern formed on a surface thereof. A steam processing chamber for performing steam processing using steam on the surface of the substrate;
A plating chamber for forming a plating film on the surface of the substrate by contacting the surface of the substrate after the vapor treatment in the vapor treatment chamber with a plating solution;
A plating apparatus comprising: at least the steam processing chamber and an apparatus frame for accommodating the plating chamber therein.   The plating apparatus according to claim 6, wherein the steam is steam generated from either pure water or pure water to which a surfactant is added.   The plating apparatus according to claim 6, further comprising an acid treatment chamber that performs acid treatment on the surface of the substrate after the vapor treatment in the vapor treatment chamber using an acidic liquid. The plating chamber is
A plating tank for holding the plating solution;
An anode disposed opposite the substrate;
The plating apparatus according to claim 6, further comprising a power source that applies a voltage between a substrate and the anode.   The plating apparatus according to claim 6, further comprising a transport device that transports the substrate while holding the substrate horizontally inside the device frame. The interior of the apparatus frame is partitioned into a dry station area and at least a wet station area in which the steam processing chamber and the plating chamber are disposed,
A first transfer device for holding and transferring a substrate horizontally within the dry station area;
The plating apparatus according to any one of claims 6 to 9, further comprising a second transport device that transports the substrate while holding the substrate vertically within the wet station area.   The plating apparatus according to claim 11, further comprising a partition plate that divides the inside of the apparatus frame into the dry station area and the wet station area.

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