JP2019085613A - Pretreatment apparatus, plating apparatus therewith, and pretreatment method - Google Patents

Abstract

To fill process liquid into a resist opening part while suppressing an influence on a resist pattern formed on a substrate and removing residue on a substrate surface.SOLUTION: Provided is a pretreatment apparatus for performing a pretreatment on a substrate. The pretreatment apparatus comprises: a pretreatment tank for accommodating process liquid for immersing the substrate; and a nozzle part for sucking the process liquid in the pretreatment tank. The sucking nozzle is arranged in a position facing a to-be-treated surface of the substrate accommodated in the pretreatment tank.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a pretreatment apparatus, a plating apparatus provided with the same, and a pretreatment method.

  Conventionally, bumps are formed on fine grooves, holes, or resist openings provided on the surface of a semiconductor wafer or the like, or electrically connected to electrodes of a package or the like on the surface of a semiconductor wafer or the like. It is practiced to form an electrode). As a method of forming the wiring and the bumps, for example, electrolytic plating, vapor deposition, printing, ball bump, etc. are known, but with the increase in the number of I / Os of the semiconductor chip and the finer pitch, Electrolytic plating methods that can be used and whose performance is relatively stable have come to be widely used.

  In the electrolytic plating method, if air bubbles remain in the resist opening, the air bubble portion is not plated and a plating failure occurs. In particular, air bubbles are likely to remain in resist openings with high aspect ratio such as bumps. For this reason, in order to avoid the plating failure, it is necessary to add a plating solution so that bubbles do not remain in the resist opening.

  Conventionally, in order to prevent air bubbles from remaining in the resist opening, a so-called pre-wet treatment, in which a substrate is subjected to a hydrophilic treatment, is performed before plating (see, for example, Patent Document 1). Specifically, in the pre-wet process, the resist opening is filled with water by immersing the substrate in degassed water or the like. When the substrate in which the resist opening is filled with water is immersed in the plating solution, the water filled in the resist opening is replaced with the plating solution, and the plating solution is filled in the resist opening.

  Also, in order to fill the resist opening with the processing liquid, spraying pure water on the substrate surface is also performed (for example, see Patent Document 2). In the case of spraying a spray onto the substrate, not only can the resist opening be filled with pure water, but also an effect of removing resist residue on the surface of the substrate can be expected due to an impact of pure water colliding with the substrate surface.

JP, 2012-224944, A JP 2005-240108 A

  When immersing the substrate in a processing solution such as degassed water as disclosed in Patent Document 1, the processing solution can be filled in the resist opening, but in some cases, the residue or the like on the surface of the substrate can not be sufficiently removed. . On the other hand, when a treatment liquid such as pure water is sprayed on the substrate as disclosed in Patent Document 2, the resist residue on the substrate surface can be removed, but it may affect the resist pattern on the substrate surface. . Specifically, when a resist pattern having an elongated opening such as a rewiring pattern is formed on the substrate, the resist pattern may be crushed by the water pressure when the treatment liquid is sprayed.

  The present invention has been made in view of the above problems, and one of its objects is to suppress the influence on the resist pattern formed on the substrate while removing the residue on the substrate surface while treating the resist solution with the processing solution. To fill the

  According to one aspect of the present invention, there is provided a pretreatment apparatus for pretreatment of a substrate having a resist opening. The pretreatment apparatus comprises: a pretreatment tank configured to receive a treatment liquid for immersing the substrate; and a suction nozzle configured to suction the treatment liquid in the pretreatment tank. The suction nozzle is disposed at a position facing the processing surface of the substrate stored in the pretreatment tank.

  According to another aspect of the present invention, there is provided a pretreatment method for pretreatment of a substrate having a resist opening. According to this pretreatment method, the step of immersing the substrate in the treatment liquid, and the step of suctioning the treatment liquid by the suction nozzle from the position facing the treated surface of the substrate immersed in the treatment liquid Have.

It is a whole layout of the plating device concerning this embodiment. It is a perspective view of the substrate holder shown in FIG. It is a schematic sectional side view of the pretreatment device concerning this embodiment. It is an expansion schematic sectional drawing of the nozzle part shown in FIG. It is a schematic sectional side view of the pretreatment device concerning other embodiments. It is a schematic sectional side view of the pretreatment device concerning other embodiments. It is a schematic sectional side view of the pretreatment device concerning other embodiments. It is an expansion schematic sectional drawing of the nozzle part shown in FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and duplicate descriptions will be omitted. FIG. 1 is an overall layout view of a plating apparatus according to the present embodiment. As shown in FIG. 1, in this plating apparatus, two cassette tables 102, an aligner 104 for aligning the positions of the orientation flat (orientation flat) and notches of the substrate in a predetermined direction, and the substrate after the plating process are rotated at high speed. And a spin rinse dryer 106 for drying. The cassette table 102 mounts a cassette 100 containing a substrate such as a semiconductor wafer. In the vicinity of the spin rinse dryer 106, a substrate attaching / detaching portion 120 for placing the substrate holder 30 and attaching / detaching the substrate is provided. At the center of these units 100, 104, 106 and 120, a substrate transfer device 122 composed of a transfer robot for transferring a substrate between these units is disposed.

  The substrate attaching / detaching portion 120 is provided with a flat plate-like mounting plate 152 which can slide in the lateral direction along the rail 150. The two substrate holders 30 are horizontally mounted in parallel on the mounting plate 152, and the substrates are delivered between the one substrate holder 30 and the substrate transfer device 122. Thereafter, the mounting plate 152 is slid in the lateral direction, and the delivery of the substrate is performed between the other substrate holder 30 and the substrate transfer device 122.

  The plating apparatus further includes a stocker 124, a pretreatment device 40, a presoak tank 128, a first cleaning tank 130a, a blow tank 132, a second cleaning tank 130b, and a plating tank 110. In the stocker 124, storage and temporary placement of the substrate holder 30 are performed. In the pretreatment device 40, the substrate is subjected to a hydrophilic treatment. In the presoak tank 128, the oxide film on the surface of the conductive layer such as the seed layer formed on the surface of the substrate is etched away. In the first cleaning tank 130a, the substrate after pre-soaking is cleaned with the substrate holder 30 with a cleaning solution (such as pure water). In the blow tank 132, the cleaned substrate is drained. In the second cleaning tank 130 b, the substrate after plating is cleaned with the substrate holder 30 with a cleaning solution. The substrate attaching / detaching portion 120, the stocker 124, the pretreatment device 40, the presoak tank 128, the first cleaning tank 130a, the blow tank 132, the second cleaning tank 130b, and the plating tank 110 are arranged in this order.

  The plating tank 110 is configured, for example, by housing a plurality of plating cells 114 inside the overflow tank 136. Each plating cell 114 is configured to accommodate one substrate inside, immerse the substrate in a plating solution held inside, and perform plating such as copper plating on the surface of the substrate.

  The plating apparatus has a substrate holder transport device 140 which is located on the side of each of these devices and transports the substrate holder 30 together with the substrate between these devices, for example, employing a linear motor system. The substrate holder transport device 140 has a first transporter 142 and a second transporter 144. The first transporter 142 is configured to transport the substrate between the substrate attaching / detaching unit 120, the stocker 124, the pretreatment apparatus 40, the presoak tank 128, the first cleaning tank 130a, and the blow tank 132. The second transporter 144 is configured to transport the substrate between the first cleaning tank 130 a, the second cleaning tank 130 b, the blow tank 132, and the plating tank 110. The plating apparatus may include only the first transporter 142 without including the second transporter 144.

  On both sides of the overflow tank 136, a paddle drive unit 160 and a paddle follower unit 162, which are located inside the respective plating cells 114 and drive paddles as stirring bars for stirring the plating solution in the plating cells 114, are arranged. ing.

The plating apparatus includes a control unit 145 configured to control the operation of each part of the plating apparatus described above. The control unit 145 includes, for example, a computer-readable recording medium storing a predetermined program that causes a plating apparatus to execute a plating process, and a central processing unit (CPU) that executes a program of the recording medium. For example, the control unit 145 performs suction processing of a treatment liquid, which will be described later, in the pretreatment device 40, controls the mounting and dismounting operation of the substrate attaching / detaching portion 120, controls the transfer of the substrate transfer device 122, controls the transfer of the substrate holder transfer device 140, and the plating tank 110. The control of the plating current and the plating time can be performed. Incidentally, as a recording medium included in the control unit 145, any recording means such as a flexible disk, a hard disk, a magnetic medium such as a memory storage, an optical medium such as a CD or DVD, a magneto-optical medium such as an MO or MD, etc. It can be adopted.

  An example of a series of plating processes by this plating apparatus will be described. First, one substrate is taken out of the cassette 100 mounted on the cassette table 102 by the substrate transfer device 122, and the substrate is transferred to the aligner 104. The aligner 104 aligns the position of the orientation flat or notch in a predetermined direction. The substrate aligned in direction by the aligner 104 is transported by the substrate transport apparatus 122 to the substrate attaching / detaching portion 120.

  In the substrate attaching / detaching unit 120, the two substrate holders 30 accommodated in the stocker 124 are simultaneously gripped by the first transporter 142 of the substrate holder transport device 140 and conveyed to the substrate attaching / detaching unit 120. Then, the two substrate holders 30 are simultaneously and horizontally placed on the mounting plate 152 of the substrate attaching / detaching portion 120. In this state, the substrate transfer device 122 transfers the substrate to each of the substrate holders 30, and the transferred substrate is held by the substrate holder 30.

  Next, the two substrate holders 30 holding the substrate are simultaneously gripped by the first transporter 142 of the substrate holder transport device 140 and transported to the pretreatment device 40. Next, the substrate holder 30 holding the substrate processed by the pretreatment apparatus 40 is transported to the presoak tank 128 by the first transporter 142, and the oxide film on the substrate is etched by the presoak tank 128. Subsequently, the substrate holder 30 holding the substrate is transported to the first cleaning tank 130a, and the surface of the substrate is rinsed with pure water stored in the first cleaning tank 130a.

  The substrate holder 30 holding the substrate that has been rinsed is transported from the first cleaning tank 130a to the plating tank 110 by the second transporter 144, and is stored in the plating cell 114 filled with the plating solution. The second transporter 144 sequentially repeats the above procedure to sequentially store the substrate holders 30 holding the substrates in the respective plating cells 114 of the plating tank 110.

  In each plating cell 114, a plating voltage is applied between the anode (not shown) in the plating cell 114 and the substrate, and at the same time, the paddle drive portion 160 and the paddle follower portion 162 reciprocate the paddle parallel to the surface of the substrate. Plating is performed on the surface of the substrate by moving it.

  After the plating is completed, the two substrate holders 30 holding the substrate after plating are simultaneously held by the second transporter 144, transported to the second cleaning tank 130b, and used as pure water stored in the second cleaning tank 130b. The substrate surface is immersed in water and rinsed with pure water. Next, the substrate holder 30 is transported to the blow tank 132 by the second transporter 144, and water droplets attached to the substrate holder 30 are removed by blowing air or the like. Thereafter, the substrate holder 30 is transported to the substrate attaching / detaching portion 120 by the first transporter 142.

  In the substrate attaching / detaching portion 120, the substrate after the processing is taken out from the substrate holder 30 by the substrate conveyance device 122 and conveyed to the spin rinse dryer 106. The spin rinse dryer 106 rotates the substrate after the plating process at high speed to dry it by high speed rotation. The dried substrate is returned to the cassette 100 by the substrate transfer device 122.

  Next, details of the substrate holder 30 shown in FIG. 1 will be described. FIG. 2 is a perspective view of the substrate holder 30 shown in FIG. As shown in FIG. 2, the substrate holder 30 is, for example, a rectangular flat plate-like first holding member 35 made of vinyl chloride, and a second holding member attached to the first holding member 35 so as to be openable and closable via a hinge 33. And 36. A holding surface 38 for holding the substrate is provided substantially at the center of the first holding member 35 of the substrate holder 30. In addition, on the outer periphery of the holding surface 38 of the first holding member 35, inverted L-shaped clampers 37 having projecting portions that project inward along the periphery of the holding surface 38 are provided at equal intervals.

  At an end of the first holding member 35 of the substrate holder 30, a pair of substantially T-shaped hands 39 serving as a support portion when transporting or suspending and supporting the substrate holder 30 are connected. In the stocker 124 shown in FIG. 1, the substrate holder 30 is vertically suspended and supported by hooking the hand 39 on the upper surface of the peripheral wall of the stocker 124. Further, the substrate holder 30 is transported by gripping the hand 39 of the suspended and supported substrate holder 30 with the first transporter 142 or the second transporter 144. Also in the pretreatment tank of the pretreatment apparatus 40, the pre-soak tank 128, the first washing tank 130a, the second washing tank 130b, the blow tank 132, and the plating tank 110, the substrate holder 30 can be obtained via the hand 39. It is suspended and supported by the peripheral wall of

  In addition, the hand 39 is provided with an external contact (not shown) for connecting to an external power supply. The external contact is electrically connected to a plurality of relay contacts (not shown) provided on the outer periphery of the holding surface 38 via a plurality of wires.

  The second holding member 36 includes a base 31 fixed to the hinge 33 and a ring-shaped seal holder 32 fixed to the base 31. A pressing ring 34 for rotatably pressing the seal holder 32 against the first holding member 35 is rotatably mounted on the seal holder 32 of the second holding member 36. The pressing ring 34 has a plurality of projecting ridges 34 a protruding outward at the outer peripheral portion thereof. The upper surface of the projection 34a and the lower surface of the inward projection of the clamper 37 have tapered surfaces which are inclined in opposite directions to each other along the rotational direction.

When holding the substrate, first, with the second holding member 36 opened, the substrate is placed on the holding surface 38 of the first holding member 35, and the second holding member 36 is closed to make the first holding member 35 and the first 2 Hold the substrate with the holding member 36. Subsequently, the pressing ring 34 is rotated clockwise to slide the projection 34 a of the pressing ring 34 into the inside (lower side) of the inward projection of the clamper 37. As a result, the first holding member 35 and the second holding member 36 are mutually tightened and locked via the tapered surfaces respectively provided on the pressing ring 34 and the clamper 37, and the substrate is held. The to-be-plated surface of the hold | maintained board | substrate is exposed outside. When releasing the holding of the substrate, the press ring 34 is rotated counterclockwise while the first holding member 35 and the second holding member 36 are locked. As a result, the projection 34a of the pressing ring 34 is removed from the inverted L-shaped clamper 37, and the holding of the substrate is released.

  Next, the details of the preprocessing device 40 shown in FIG. 1 will be described. As described above, when plating a substrate having a resist opening, it is necessary to fill the resist opening with a liquid. In addition to this, when a resist residue is present on the substrate surface and in the resist opening, it is also necessary to remove the resist residue while suppressing the influence on the resist pattern formed on the substrate. Therefore, the pretreatment apparatus 40 of the present embodiment sucks in the treatment liquid in the vicinity of the substrate immersed in the pretreatment liquid from the suction nozzle, thereby causing the treatment liquid in the vicinity of the substrate surface to flow, and within the resist opening of the substrate. Air bubbles and resist residues.

  FIG. 3 is a schematic side sectional view of the pretreatment device 40 according to the present embodiment. As illustrated, the pretreatment device 40 includes an inner tank 41, an outer tank 42, and a nozzle unit 60. The inner tank 41 is configured to vertically accommodate the substrate holder 30 holding the substrate. Moreover, the substrate holder 30 accommodated in the inner tank 41 is immersed in the degassed water. The outer tank 42 is disposed adjacent to the inner tank 41 and configured to receive the degassed water that has overflowed from the inner tank 41. The nozzle unit 60 is disposed in the inner tank 41 so as to face the substrate of the substrate holder 30 housed in the inner tank 41, and configured to absorb the degassed water in the inner tank 41. In addition, in this embodiment, although the process liquid accommodated in the inner tank 41 is deaerated water, you may use not only this but a pure water, a dilute sulfuric acid, etc. The inner tank 41 and the outer tank 42 constitute a pretreatment tank that contains degassed water for immersing the substrate.

  The nozzle unit 60 is configured to scan along the processed surface of the substrate by a drive mechanism (not shown). Thus, the deaerated water can be sucked by the nozzle unit 60 over the entire processing surface of the substrate. In addition, when arrange | positioning not only this but the nozzle part 60 to oppose substantially the whole area | region of the to-be-processed surface of a board | substrate, the nozzle part 60 may be fixed.

  The pretreatment device 40 has a return mechanism 70 configured to return the degassed water sucked from the nozzle unit 60 to the inner tank 41 or the outer tank 42. The return mechanism 70 has a return pipeline 71 for supplying the deaerated water sucked from the nozzle portion 60 to the outer tank 42 or the inner tank 41. The return mechanism 70 also has a pump 72 and a filter 73 on the return line 71. The pump 72 is configured to suck deaerated water from the nozzle unit 60 and transfer it to the outer tank 42 or the inner tank 41. The filter 73 removes impurities contained in the degassed water in the return line 71 (ie, filters the degassed water). Here, the impurities include resist residues and particles. In the present embodiment, the return mechanism 70 is configured to return the degassed water sucked from the nozzle unit 60 to the inner tank 41, but is not limited to this and may be configured to return the outer tank 42. Further, since the impurities in the degassed water can be removed by the filter 54 of the degassed water circulation system 50 described later, the filter 73 may be omitted in the return mechanism 70. When the filter 73 is omitted in the return mechanism 70, the return mechanism 70 preferably returns the degassed water sucked from the nozzle unit 60 to the outer tank 42. Thus, the impurities in the deaerated water sucked by the nozzle unit 60 are removed by the filter 54 of the deaerated water circulation device 50 described later before reattaching to the surface of the substrate Wf.

The pretreatment device 40 further includes a degassed water circulation device 50 that circulates the degassed water between the outer tank 42 and the inner tank 41. The degassed water circulation system 50 has a circulation pipeline 51 that fluidly connects the outer tank 42 and the inner tank 41. In addition, the deaerated water circulation device 50 has a pump 52, a deaeration unit 53, and a filter 54 on the circulation line 51. The pump 52 is configured to transfer the degassed water from the outer tank 42 to the inner tank 41. The degassing unit 53 is connected to the vacuum source 55 and degasses the deaerated water passing through the circulation line 51. The filter 54 removes impurities contained in the degassed water in the circulation line 51 (ie, filters the degassed water).

  When the deaerated water is circulated in the pretreatment device 40, the deaerated water circulation device 50 starts the pump 52 to supply the deaerated water from the lower side of the inner tank 41 first. Thereby, the deaerated water overflows from the inner tank 41 and flows into the outer tank 42. Subsequently, the deaerated water flowing into the outer tank 42 is discharged from the lower side of the outer tank 42, deaerated by the deaeration unit 53, impurities are removed by the filter 54, and returns to the inner tank 41. Thus, the degassed water in the inner tank 41 is circulated. The deaerated water circulation system 50 deaerates deaerated water while circulating deaerated water between the outer tank 42 and the inner tank 41, so the dissolved oxygen concentration of the deaerated water in the inner tank 41 is predetermined. It can be kept below the value.

  FIG. 4 is an enlarged schematic cross-sectional view of the nozzle unit 60 shown in FIG. As shown in FIG. 4, the nozzle unit 60 has a nozzle head 61 and one or more suction nozzles 62 provided in the nozzle head 61. Although a plurality of suction nozzles 62 are provided in the nozzle head 61 in the present embodiment, the present invention is not limited thereto. A single suction nozzle 62 may be provided in the nozzle head 61. The nozzle unit 60 is preferably configured to absorb deaerated water in a direction substantially orthogonal to the surface to be treated (surface to be plated) of the substrate Wf held by the substrate holder 30. Specifically, as shown in FIG. 4, the suction nozzle 62 can be provided to face the processed surface of the substrate Wf, and can be provided to be substantially orthogonal to the processed surface of the substrate Wf.

  The suction nozzle 62 is preferably configured to protrude from the nozzle head 61 as shown in FIG. In this case, as shown in FIG. 4, when the suction nozzle 62 sucks in the degassed water, the degassed water moves toward the substrate Wf from the gap between the end of the suction nozzle 62 and the nozzle head 61, and the substrate Wf The flow of degassed water in the vicinity of the treated surface of the As a result, more degassed water comes in contact with the surface of the substrate Wf, and bubbles in the resist pattern of the substrate Wf and residues on the surface of the substrate Wf can be easily removed. However, the end of the suction nozzle 62 may be flush with the nozzle head 61.

  Next, a method of pre-processing the substrate Wf in the pre-processing apparatus 40 shown in FIG. 3 will be described. First, the substrate holder 30 holding the substrate Wf is accommodated in the inner tank 41 in the vertical direction. Thereby, the substrate Wf is immersed in the deaerated water, and the air bubbles on the surface of the substrate Wf and in the resist pattern are removed. Deaerated water in the inner tank 41 is circulated between the outer tank 42 and the deaerated water circulation device 50. Thereby, the impurities in the degassed water are removed while the dissolved oxygen concentration of the degassed water in the inner tank 41 and the outer tank 42 is maintained at or below a predetermined value.

  Subsequently, the degassed water is sucked by the nozzle unit 60 from the position facing the processed surface of the substrate Wf. At this time, the processing liquid is sucked by the suction nozzle in a direction substantially orthogonal to the processing surface of the substrate Wf. In addition, the nozzle unit 60 is scanned along the processed surface of the substrate Wf. Deaerated water sucked from the nozzle unit 60 is returned to the inner tank 41 via the return line 71. When the degassed water is returned through the return line 71, the impurities in the degassed water are removed by the filter 73 of the return mechanism 70.

As described above, according to the pretreatment apparatus 40 of the present embodiment, since the substrate Wf is immersed in a treatment liquid such as degassed water, bubbles on the surface of the substrate Wf and in the resist pattern are removed. Can. Further, in the pretreatment apparatus 40, the degassed water is sucked by the nozzle unit 60 provided at a position facing the processed surface of the substrate Wf. As a result, a flow of degassed water can be generated in the vicinity of the processed surface of the substrate Wf, so a large amount of degassed water comes in contact with the surface of the substrate Wf and bubbles in the resist opening of the substrate Wf are removed more efficiently. While being possible, the residue on the surface of the substrate Wf can also be removed. Further, in the pretreatment apparatus 40, the impact or resistance applied to the resist pattern on the surface of the substrate Wf is smaller than in the case where the degassed water is sprayed to the surface of the substrate Wf, so the influence on the resist pattern can be reduced.

  Further, according to the pretreatment device 40 of the present embodiment, the degassed water sucked by the nozzle unit 60 is returned to the inner tank 41 or the outer tank 42 through the return mechanism 70, so the degassed water is wasted. I have not. Furthermore, since the return mechanism 70 includes the filter 73, impurities including resist residues in the degassed water can be removed from the degassed water to maintain the cleanliness of the degassed water. More specifically, when the deaerated water is sucked by the nozzle unit 60, the impurities generated from the surface of the substrate Wf and the like are also sucked and removed by the filter 73. This can prevent impurities generated from the surface of the substrate Wf and the like from floating in the inner tank 41 and reattaching to the surface of the substrate Wf.

  Next, another embodiment of the preprocessing device 40 will be described. FIG. 5 is a schematic side sectional view of a pretreatment device 40 according to another embodiment. In the pretreatment apparatus 40 shown in FIG. 5, the substrate Wf whose both surfaces are to be treated is pretreated. Along with this, the pretreatment device 40 shown in FIG. 5 is different from the pretreatment device 40 shown in FIG. 3 in having the two nozzle portions 60 and the structure of the return mechanism 70.

  As shown in FIG. 5, the pretreatment device 40 includes the nozzle units 60 on both sides of the substrate holder 30 housed in the inner tank 41. Each of the two nozzle units 60 is disposed at a position facing the processing surface of the substrate held by the substrate holder 30. By sucking the deaerated water by the two nozzle parts 60, a flow of deaerated water can be generated in the vicinity of both treated surfaces of the substrate to remove air bubbles and residues on both treated surfaces of the substrate. Further, the return mechanism 70 of the pretreatment device 40 is configured to return the degassed water sucked from the two nozzle units 60 to the inner tank 41 or the outer tank 42.

  FIG. 6 is a schematic side sectional view of a pretreatment device 40 according to another embodiment. The pretreatment device 40 shown in FIG. 6 differs from the pretreatment device 40 shown in FIG. 3 in that the deaerated water circulation device 50 is not provided and the return mechanism 70 has a deaeration unit 53. That is, the return mechanism 70 has a degassing unit 74 on the return line 71. The degassing unit 74 is connected to the vacuum source 75 and degasses the deaerated water passing through the return line 71. In addition, the return mechanism 70 is configured to return the degassed water sucked from the nozzle unit 60 to the inner tank 41.

  In the pretreatment device 40 shown in FIG. 6, since the return mechanism 70 includes the filter 73 and the degassing unit 74, when the deaerated water passes through the return mechanism 70, impurities in the deaerated water are removed and deaerated. The dissolved oxygen concentration of water can be maintained. In addition, since the deaerated water sucked from the nozzle unit 60 is returned to the inner tank 41, the deaerated water circulation device 50 can be omitted in the pretreatment device 40.

  FIG. 7 is a schematic side sectional view of a pretreatment device 40 according to another embodiment. The pretreatment device 40 shown in FIG. 7 differs from the pretreatment device 40 shown in FIG. 3 in that the degassed water sucked from the nozzle unit 60 is returned to the inner tank 41 through the nozzle unit 60. That is, the return pipe line 71 of the return mechanism 70 is piped out of the nozzle portion 60 and returning to the nozzle portion 60.

FIG. 8 is an enlarged schematic cross-sectional view of the nozzle unit 60 shown in FIG. As shown in FIG. 8, the nozzle unit 60 includes one or more discharge nozzles 63 in addition to one or more suction nozzles 62 provided in the nozzle head 61. The discharge nozzle 63 is configured to discharge the degassed water sucked from the suction nozzle 62 and passed through the return mechanism 70 toward the processing target surface of the substrate Wf. By discharging the deaerated water through the discharge nozzle 63, the deaerated water sucked from the suction nozzle 62 can be positively discharged to the processed surface of the substrate Wf. Thus, the flow of the degassed water can be generated in the vicinity of the surface to be processed of the substrate Wf, so a large amount of the degassed water contacts the surface of the substrate Wf, and the bubbles in the resist pattern of the substrate Wf and the surface of the substrate Wf Residue can be removed.

  As mentioned above, although embodiment of this invention was described, embodiment of the invention mentioned above is for making an understanding of this invention easy, and does not limit this invention. The present invention can be modified and improved without departing from the gist thereof, and the present invention naturally includes the equivalents thereof. In addition, any combination or omission of each component described in the claims and the specification is possible in a range in which at least a part of the above-mentioned problems can be solved or in a range where at least a part of the effect is exhibited. is there. For example, although the electrolytic plating apparatus was used as an example of a plating apparatus in the above description, the present invention is applicable not only to this but also to an electroless plating apparatus which performs pretreatment.

The following describes some of the forms disclosed herein.
According to a first aspect, there is provided a pretreatment device for pretreatment of a substrate. The pretreatment apparatus includes a pretreatment unit configured to store a treatment liquid for immersing the substrate, and a nozzle unit having a suction nozzle configured to suction the treatment liquid in the pretreatment tank. And the suction nozzle is disposed at a position facing the processing surface of the substrate accommodated in the pretreatment tank.

  According to the first aspect, since the substrate is immersed in the treatment liquid such as degassed water, air bubbles on the surface of the substrate and in the resist pattern can be removed. Further, in the pretreatment apparatus, the processing liquid is sucked by the nozzle portion provided at the position facing the processing surface of the substrate. Thus, the flow of the processing liquid can be generated in the vicinity of the surface to be processed of the substrate, so that many processing liquids come into contact with the substrate surface, and bubbles in the resist opening of the substrate can be removed more efficiently. Residue can also be removed. Further, in the pretreatment apparatus, the impact or resistance applied to the resist pattern on the substrate surface is smaller than in the case where the treatment liquid is sprayed on the substrate surface, so that the influence on the resist pattern can be reduced.

  According to the second aspect, the pretreatment device of the first aspect has a return mechanism configured to return the treatment liquid sucked from the suction nozzle to the pretreatment tank. According to the second aspect, since the processing liquid sucked by the suction nozzle is returned to the pretreatment tank via the return mechanism, the processing liquid is not wasted.

  According to a third aspect, in the pretreatment device of the second aspect, the return mechanism has a filter for filtering the processing liquid sucked from the suction nozzle. According to the third aspect, since the return mechanism has the filter, the impurity including the residue of the resist in the processing liquid can be removed from the processing liquid to maintain the cleanliness of the processing liquid. More specifically, by suctioning the processing liquid by the suction nozzle, impurities generated from the substrate surface and the like are also sucked and removed by the filter. Thereby, it is possible to prevent the impurities generated from the substrate surface and the like from reattaching to the surface of the substrate.

  According to the fourth aspect, in the pretreatment apparatus of the second or third aspect, the processing liquid sucked from the suction nozzle is discharged toward the surface to be treated of the substrate stored in the pretreatment tank. It has a discharge nozzle.

According to the fourth aspect, since the flow of the processing liquid can be generated faster in the vicinity of the processing surface of the substrate, many processing liquids contact the substrate surface, and bubbles in the resist pattern of the substrate and residue on the substrate surface Can be removed.

  According to a fifth aspect, in the pretreatment apparatus according to the second to fourth aspects, the processing liquid is degassed water, and the return mechanism degasses the processing liquid sucked from the suction nozzle. Has a unit. According to the fifth aspect, since the return mechanism includes the degassing unit, the deoxygenated water can maintain the dissolved oxygen concentration of the degassed water by passing through the return mechanism.

  According to a sixth aspect, in the pretreatment apparatus of the first to fifth aspects, the suction nozzle is configured to suck the processing liquid in a direction substantially orthogonal to the processing surface of the substrate.

  According to a seventh aspect, in the pretreatment apparatus according to any one of the first to sixth aspects, the suction nozzle is configured to scan along the surface to be plated of the substrate accommodated in the pretreatment tank. Be done. According to the seventh aspect, the processing liquid can be sucked by the suction nozzle over the entire processing surface of the substrate.

  According to an eighth aspect, in the pretreatment device according to any one of the first to seventh aspects, the nozzle portion has a nozzle head, and the suction nozzle is configured to protrude from the nozzle head. . According to the eighth aspect, when the suction nozzle sucks in the processing liquid, the processing liquid moves toward the substrate from the space between the nozzle head and the end of the suction nozzle, and the processing liquid in the vicinity of the processing surface of the substrate Flow is likely to occur. As a result, more processing solutions come in contact with the substrate surface, and it becomes easy to remove air bubbles in the resist pattern of the substrate and residues on the substrate surface.

  According to a ninth aspect, there is provided a plating apparatus including the pretreatment apparatus according to any one of the first to eighth aspects, and a plating tank for plating the substrate subjected to the pretreatment.

  According to a tenth aspect, there is provided a pretreatment method for pretreatment of a substrate. The pretreatment method includes a step of immersing the substrate in a treatment liquid, and a step of suctioning the treatment liquid by a suction nozzle from a position facing the surface to be treated of the substrate immersed in the treatment liquid.

  According to the tenth aspect, the deaerated water is sucked by the suction nozzle from the position facing the processed surface of the substrate. Thus, the flow of the processing liquid can be generated in the vicinity of the surface to be processed of the substrate, so that many processing liquids come into contact with the substrate surface to remove air bubbles in the resist pattern of the substrate and residues on the substrate surface. it can. In addition, since the impact or resistance applied to the resist pattern on the substrate surface is smaller than in the case of spraying the treatment liquid on the substrate surface, the influence on the resist pattern can be reduced.

  According to an eleventh aspect, in the pretreatment method of the tenth aspect, there is provided a return step of returning the treatment liquid sucked from the suction nozzle to the pretreatment tank. According to the eleventh aspect, since the processing liquid sucked by the suction nozzle is returned to the pretreatment tank, the processing liquid is not wasted.

  According to a twelfth aspect, in the pretreatment method of the eleventh aspect, the return step includes a step of filtering the treatment liquid sucked from the suction nozzle. According to the eleventh aspect, the impurity including the residue of the resist in the processing liquid can be removed from the processing liquid to maintain the cleanliness of the processing liquid. More specifically, the processing liquid is filtered by sucking the processing liquid by the suction nozzle. Thereby, it is possible to prevent the impurities generated from the substrate surface and the like from reattaching to the surface of the substrate.

  According to a thirteenth aspect, in the pretreatment method according to the eleventh aspect or the twelfth aspect, the returning step is performed on the surface to be processed of the substrate in which the processing liquid sucked from the suction nozzle is immersed in the processing liquid. It has the process of discharging toward.

  According to the thirteenth aspect, since the flow of the processing liquid can be generated faster in the vicinity of the processing surface of the substrate, many processing liquids contact the substrate surface, and bubbles in the resist pattern of the substrate and residue on the substrate surface Can be removed.

  According to a fourteenth aspect, in the pretreatment method according to any of the eleventh to thirteenth aspects, the treatment liquid is degassed water, and the return step removes the treatment liquid sucked from the suction nozzle. It has a process to worry about. According to the fourteenth aspect, since the return mechanism includes the degassing unit, the deoxygenated water can maintain the dissolved oxygen concentration of the degassed water by passing through the return mechanism.

  According to a fifteenth aspect, in the pretreatment method according to any of the tenth to fourteenth aspects, the step of sucking the treatment liquid by a suction nozzle is performed in the direction substantially orthogonal to the surface to be treated of the substrate. Including a step of sucking in the liquid.

  According to a sixteenth aspect, in the pretreatment method according to any of the tenth to fifteenth aspects, the step of suctioning the treatment liquid with a suction nozzle includes the treatment of the substrate on which the suction nozzle is accommodated in the pretreatment tank. There is a step of scanning along the plating surface. According to the sixteenth aspect, the processing liquid can be sucked by the suction nozzle over the entire processing surface of the substrate.

Wf ... Substrate 30 ... Substrate holder 40 ... Pretreatment device 41 ... Inner tank 42 ... Outer tank 60 ... Nozzle section 61 ... Nozzle head 62 ... Suction nozzle 63 ... Discharge nozzle 70 ... Return mechanism 71 ... Return pipeline 72 ... Pump 73 ... ... Filter 74 Deaeration unit 75 Vacuum source 110 Plating tank

Claims (16)

A pretreatment apparatus for pretreatment of a substrate, wherein
A pretreatment tank configured to receive a treatment liquid for immersing the substrate;
A nozzle portion having a suction nozzle configured to suction the processing liquid in the pretreatment tank,
The pretreatment apparatus, wherein the suction nozzle is disposed at a position facing the processing surface of the substrate accommodated in the pretreatment tank. In the pre-processing apparatus according to claim 1,
A pretreatment apparatus comprising a return mechanism configured to return the treatment liquid sucked from the suction nozzle to the pretreatment tank. In the pre-processing apparatus according to claim 2,
The pre-processing apparatus, wherein the return mechanism includes a filter that filters the processing liquid sucked from the suction nozzle. In the pretreatment device according to claim 2 or 3,
A pre-processing apparatus, comprising: a discharge nozzle that discharges the processing liquid sucked from the suction nozzle toward a processing surface of the substrate stored in the pre-treatment tank. The pretreatment apparatus according to any one of claims 2 to 4
The treatment liquid is degassed water,
The pre-processing apparatus, wherein the return mechanism includes a degassing unit that degasses the processing liquid sucked from the suction nozzle. In the pretreatment device according to any one of claims 1 to 5,
The pretreatment apparatus, wherein the suction nozzle is configured to suck the processing liquid in a direction substantially orthogonal to a processing surface of the substrate. In the pretreatment device according to any one of claims 1 to 6,
The pretreatment apparatus, wherein the suction nozzle is configured to scan along a surface to be plated of the substrate accommodated in the pretreatment tank. A pretreatment apparatus according to any one of claims 1 to 7;
The nozzle unit has a nozzle head,
The pretreatment device, wherein the suction nozzle is configured to protrude from the nozzle head. A pre-processing apparatus according to any one of claims 1 to 8;
And a plating tank for plating the pretreated substrate. A pretreatment method for pretreatment of a substrate, wherein
Immersing the substrate in a processing solution;
And D. A step of sucking the processing solution by a suction nozzle from a position facing the processing surface of the substrate immersed in the processing solution. In the pretreatment method described in claim 10,
A pretreatment process comprising a return step of returning the treatment liquid sucked from the suction nozzle to the pretreatment tank. In the pre-processing method according to claim 11,
The return step includes a step of filtering the processing solution sucked from the suction nozzle. In the pretreatment method described in claim 11 or 12,
The return step includes a step of discharging the processing liquid sucked from the suction nozzle toward a processing surface of the substrate immersed in the processing liquid. In the pretreatment method according to any one of claims 11 to 13,
The treatment liquid is degassed water,
The return step includes a step of degassing the processing solution sucked from the suction nozzle. The pretreatment method according to any one of claims 10 to 14,
The step of suctioning the processing liquid by a suction nozzle includes the step of suctioning the processing liquid in a direction substantially orthogonal to the processing surface of the substrate. In the pretreatment method according to any one of claims 10 to 15,
The step of suctioning the processing liquid by a suction nozzle includes a step of scanning the suction nozzle along the surface to be plated of the substrate accommodated in the pretreatment tank.

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