KR102462157B1 - Substrate processing apparatus - Google Patents

Abstract

An object of the present invention is to suppress the generation of particles on the lower surface of a wafer in a drying method using a processing fluid in a supercritical state.
A substrate processing apparatus according to an embodiment is a substrate processing apparatus in which a drying process is performed for drying a substrate on which a liquid film is formed on an upper surface having a pattern using a processing fluid in a supercritical state, the substrate processing apparatus comprising: a holding unit for holding the substrate; A supply unit for supplying a processing fluid is provided. And, the holding part has a support part which protrudes upwardly and contacts the lower surface of the substrate to support the substrate, and when the substrate is held, at least a part of the lower surface of the substrate is exposed to the processing space by the support part.

Description

Substrate processing apparatus {SUBSTRATE PROCESSING APPARATUS}

The disclosed embodiment relates to a substrate processing apparatus.

Conventionally, in a drying process after treating the upper surface of a semiconductor wafer (hereinafter referred to as a wafer), which is a substrate, with a liquid, the wafer with the upper surface wet by the liquid is brought into contact with a processing fluid in a supercritical state to make the wafer The drying method is known (for example, refer patent document 1).

[Patent Document 1] Japanese Patent Laid-Open No. 2013-131729

However, in the conventional drying method using a processing fluid in a supercritical state, the liquid applied on the wafer may also return to the lower surface of the wafer. In addition, since the lower surface of the wafer is covered in contact with the holding plate, the processing fluid in the supercritical state is not supplied to the lower surface side of the wafer. Therefore, since the liquid returning to the lower surface of the wafer is dried without being dissolved in the processing fluid, there is a possibility that particles may be generated in such dry locations.

One aspect of the embodiment has been made in view of the above, and an object of the present invention is to provide a substrate processing apparatus capable of suppressing the generation of particles on the lower surface of a wafer in a drying method using a processing fluid in a supercritical state.

A substrate processing apparatus according to an aspect of the embodiment is a substrate processing apparatus in which a drying process is performed for drying a substrate on which a liquid film is formed on an upper surface having a pattern using a processing fluid in a supercritical state, the substrate processing apparatus comprising: a holding unit for holding the substrate; and a supply unit provided on a side of the substrate held by the holding unit and configured to supply the processing fluid into the processing space. In addition, the holding part has a support part which protrudes upwardly and contacts the lower surface of the substrate to support the substrate, and when the substrate is held, at least a part of the lower surface of the substrate is processed by the support part. exposed in space.

According to one aspect of the embodiment, in the drying method using the processing fluid in a supercritical state, generation of particles on the lower surface of the wafer can be suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram which shows the schematic structure of the substrate processing system which concerns on embodiment.
2 is a cross-sectional view showing the configuration of a cleaning processing unit according to the embodiment.
3 is an external perspective view showing the configuration of a drying processing unit according to an embodiment.
4A is a cross-sectional view showing an example of an internal configuration of a drying processing unit according to an embodiment.
4B is a plan view showing an example of the internal configuration of the drying processing unit according to the embodiment.
5 is a cross-sectional view showing an example of an internal configuration of a drying processing unit according to Modification Example 1 of the embodiment.
6 is a cross-sectional view showing an example of an internal configuration of a drying processing unit according to Modification Example 2 of the embodiment.
7 is a cross-sectional view showing an example of an internal configuration of a drying processing unit according to a third modification of the embodiment.
8A is a cross-sectional view showing an example of an internal configuration of a drying processing unit according to Modification Example 4 of the embodiment.
8B is a plan view showing an example of an internal configuration of a drying processing unit according to Modification Example 4 of the embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of the substrate processing apparatus disclosed by this application is described in detail with reference to an accompanying drawing. In addition, this invention is not limited by embodiment shown below.

<Outline of substrate processing system>

First, the schematic structure of the substrate processing system 1 which concerns on embodiment is demonstrated, referring FIG. 1 . 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to an embodiment. In the following, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis orthogonal to each other are defined, and the positive Z-axis direction is the vertically upward direction.

As shown in FIG. 1 , the substrate processing system 1 includes a carry-in/out station 2 and a processing station 3 . The carrying-in/out station 2 and the processing station 3 are adjacently installed.

The carrying-in/out station 2 is equipped with the carrier arrangement|positioning part 11 and the conveyance part 12. In the carrier arrangement section 11, a plurality of carriers C for accommodating a plurality of semiconductor wafers W (hereinafter referred to as wafers W) in a horizontal state are arranged.

The transfer unit 12 is provided adjacent to the carrier arrangement unit 11 , and includes a substrate transfer device 13 and a transfer unit 14 therein. The substrate transfer apparatus 13 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer apparatus 13 can move in horizontal and vertical directions and pivot about a vertical axis, and use a wafer holding mechanism to hold the wafer W between the carrier C and the transfer unit 14 . ) is returned.

The processing station 3 is installed adjacent to the transport unit 12 . The processing station 3 includes a conveying unit 15 , a plurality of cleaning processing units 16 , and a plurality of drying processing units 17 . The plurality of washing processing units 16 and the plurality of drying processing units 17 are installed side by side on both sides of the conveying unit 15 . In addition, the arrangement|positioning and number of the washing processing unit 16 and the drying processing unit 17 shown in FIG. 1 are an example, and it is not limited to what was shown.

The transfer unit 15 includes a substrate transfer device 18 therein. The substrate transfer apparatus 18 is provided with a wafer holding mechanism for holding the wafer W . In addition, the substrate transfer apparatus 18 can move in horizontal and vertical directions and pivot about a vertical axis, and includes a transfer unit 14, a cleaning processing unit 16, and a wafer holding mechanism using a wafer holding mechanism; The wafer W is transferred between the drying processing units 17 .

The cleaning processing unit 16 performs a predetermined cleaning processing on the wafer W conveyed by the substrate transfer apparatus 18 . A configuration example of the cleaning processing unit 16 will be described later.

The drying processing unit 17 performs a predetermined drying processing on the wafer W cleaned by the cleaning processing unit 16 . A configuration example of the drying processing unit 17 will be described later.

Further, the substrate processing system 1 includes a control device 4 . The control device 4 is, for example, a computer, and includes a control unit 19 and a storage unit 20 .

The control unit 19 includes a microcomputer and various circuits having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input/output port, and the like. The CPU of such a microcomputer realizes the control described later by reading and executing the program stored in the ROM.

On the other hand, such a program has been recorded on a computer-readable recording medium, and may be installed in the storage unit 20 of the control device 4 from the recording medium. Examples of the computer-readable recording medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

The storage unit 20 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

In the substrate processing system 1 configured as described above, first, the substrate transfer apparatus 13 of the carry-in/out station 2 takes out the wafer W from the carrier C arranged in the carrier placement unit 11 . Then, the taken out wafer W is placed on the transfer unit 14 . The wafer W placed in the transfer unit 14 is taken out from the transfer unit 14 by the substrate transfer device 18 of the processing station 3 and loaded into the cleaning processing unit 16 .

The wafer W carried into the cleaning processing unit 16 is subjected to a cleaning processing by the cleaning processing unit 16 , and then is unloaded from the cleaning processing unit 16 by the substrate transfer device 18 . The wafer W unloaded from the cleaning processing unit 16 is loaded into the drying processing unit 17 by the substrate transfer device 18 , and drying processing is performed by the drying processing unit 17 .

The wafer W subjected to the drying process by the drying processing unit 17 is unloaded from the drying processing unit 17 by the substrate transfer device 18 , and is placed in the delivery unit 14 . Then, the processed wafer W placed in the transfer unit 14 is returned to the carrier C of the carrier arrangement unit 11 by the substrate transfer device 13 .

<Outline of cleaning processing unit>

Next, the schematic structure of the washing|cleaning processing unit 16 is demonstrated, referring FIG. 2 is a cross-sectional view showing the configuration of the cleaning processing unit 16 according to the embodiment. The cleaning processing unit 16 is configured as a single-wafer cleaning processing unit that cleans the wafers W one by one by, for example, spin cleaning.

As shown in FIG. 2 , the cleaning processing unit 16 holds the wafer W approximately horizontally with a wafer holding mechanism 25 disposed in the outer chamber 23 forming the processing space, and holds the wafer W The wafer W is rotated by rotating the mechanism 25 about a vertical axis. Then, the cleaning processing unit 16 causes the nozzle arm 26 to enter above the rotating wafer W, and from the chemical nozzle 26a provided at the distal end of the nozzle arm 26, a chemical solution or a rinse solution in advance. By supplying in a predetermined order, the cleaning process of the upper surface Wa of the wafer W is performed.

Further, in the cleaning processing unit 16 , a chemical liquid supply path 25a is also formed inside the wafer holding mechanism 25 . Then, the cleaning process of the lower surface Wb of the wafer W is performed by the chemical or rinse liquid supplied from the chemical liquid supply path 25a.

In the above-described cleaning treatment of the wafer W, for example, particles and organic contaminants are first removed by SC1 liquid (a mixture of ammonia and hydrogen peroxide), which is an alkaline chemical, and then, deionized water (rinsing liquid) ( Rinse washing with DeIonized Water (hereinafter referred to as DIW) is performed. Next, the natural oxide film is removed with an acidic chemical solution, Diluted HydroFluoric acid (hereinafter, referred to as DHF), followed by rinsing with DIW.

The various chemical liquids described above are received in the outer chamber 23 or the inner cup 24 disposed in the outer chamber 23 , and a drain port 23a formed at the bottom of the outer chamber 23 . ) or the drain port 24a formed at the bottom of the inner cup 24 . In addition, the atmosphere in the outer chamber 23 is exhausted from the exhaust port 23b formed at the bottom of the outer chamber 23 .

After the above-described rinsing process of the wafer W, while rotating the wafer holding mechanism 25, the liquid IPA (hereinafter referred to as "IPA liquid") is applied to the upper surface Wa and the lower surface Wb of the wafer W. ) to replace the DIW remaining on both surfaces of the wafer W. After that, the rotation of the wafer holding mechanism 25 is gently stopped.

The wafer W, which has been cleaned in this way, has an IPA liquid 71 (refer to FIG. 4A) applied to its upper surface Wa (a liquid film of the IPA liquid 71 is formed on the upper surface Wa of the wafer W) state], it is transferred to the substrate transfer apparatus 18 by a transfer mechanism (not shown) provided in the wafer holding mechanism 25 , and is carried out from the cleaning processing unit 16 .

Here, the IPA liquid 71 applied to the upper surface Wa of the wafer W is carried in to the drying processing unit 17 while the wafer W is being transferred from the cleaning processing unit 16 to the drying processing unit 17 . During operation, the liquid on the upper surface Wa is evaporated (vaporized) to prevent pattern collapse from occurring, and functions as a drying-preventing liquid. The thickness of the IPA liquid 71 applied on the wafer W is, for example, about 1 mm to 5 mm.

After the cleaning process in the cleaning processing unit 16 is finished, the wafer W to which the IPA liquid 71 has been applied to the upper surface Wa is transferred to the drying processing unit 17 . Then, in the dry processing unit 17, the IPA liquid 71 in the supercritical state is brought into contact with the IPA liquid 71 on the upper surface Wa (refer to FIG. 4A) in the supercritical state, so that the IPA liquid 71 is brought into the supercritical state. A process for dissolving and removing the processing fluid 70 to dry the wafer W is performed.

<Outline of drying processing unit>

Below, the structure of the drying processing unit 17 is demonstrated. 3 is an external perspective view showing the configuration of the drying processing unit 17 according to the embodiment.

The drying processing unit 17 has a main body 31 , a holding part 32 , and a cover member 33 . In the case-shaped main body 31 , an opening 34 for loading and unloading the wafer W is formed.

The holding unit 32 holds the wafer W to be processed in the horizontal direction. In the substantially flat holding part 32 , an opening 32a is formed between the held wafer W and the cover member 33 . In addition, on the upper surface side of the holding part 32 , a support part 41 (refer to FIG. 4A ) in contact with the lower surface Wb of the wafer W and a shift suppression part 42 adjacent to the wafer W are provided. The details of such a support part 41 and the shift|offset|difference suppression part 42 are mentioned later.

The lid member 33 supports the holding portion 32 , and seals the opening 34 when the wafer W is loaded into the main body 31 .

The main body 31 is, for example, a container in which a processing space 31a (see FIG. 4A ) capable of accommodating a wafer W having a diameter of 300 mm is formed therein, and supply ports 35 and 36 and discharge ports ( 37) is formed. The supply ports 35 and 36 and the discharge port 37 are respectively connected to supply lines for flowing the processing fluid 70 (refer to FIG. 4A ) provided on the upstream and downstream sides of the drying processing unit 17 , respectively. has been A configuration example of such a supply line will be described later.

The supply port 35 is connected to the side surface of the case-shaped main body 31 opposite to the opening part 34 . In addition, the supply port 36 is connected to the bottom surface of the main body 31 . In addition, the discharge port 37 is connected to the lower side of the opening part 34 . Meanwhile, although two supply ports 35 and 36 and one discharge port 37 are shown in FIG. 3 , the number of the supply ports 35 and 36 or the discharge port 37 is not particularly limited.

Further, inside the body 31 , fluid supply headers 38 and 39 as an example of a supply unit and a fluid discharge header 40 as an example of a discharge unit are provided. Further, the fluid supply headers 38 and 39 have a plurality of supply ports 38a and 39a formed side by side in the longitudinal direction of the fluid supply headers 38 and 39, and the fluid discharge header 40 has a plurality of outlet ports ( 40a) is formed side by side in the longitudinal direction of this fluid discharge header 40 .

The fluid supply header 38 is connected to the supply port 35 , and is provided inside the case-shaped main body 31 , adjacent to the side surface on the opposite side to the opening part 34 . In addition, the plurality of supply ports 38a formed side by side in the fluid supply header 38 face the opening portion 34 side.

The fluid supply header 39 is connected to the supply port 36 , and is provided in the central portion of the bottom surface inside the case-shaped body 31 . In addition, the plurality of supply ports 39a formed side by side in the fluid supply header 39 face upward.

The fluid discharge header 40 is connected to the discharge port 37 , and is adjacent to the side surface on the side of the opening 34 in the inside of the case-shaped body 31 , and is provided below the opening 34 . In addition, the plurality of outlet ports 40a formed side by side in the fluid discharge header 40 face upward.

The fluid supply headers 38 , 39 supply the processing fluid 70 into the body 31 . In addition, the fluid discharge header 40 guides the processing fluid 70 in the body 31 to the outside of the body 31 and discharges it. Meanwhile, details of the flow of the processing fluid 70 inside the body 31 will be described later.

The drying processing unit 17 further includes a pressing mechanism (not shown). This pressing mechanism pushes the cover member 33 toward the body 31 against the internal pressure caused by the processing fluid 70 in the supercritical state supplied into the processing space 31a inside the body 31 . and has a function of sealing the processing space 31a. In addition, a heat insulating material, a tape heater, or the like may be provided on the surface of the main body 31 so that the processing fluid 70 supplied into the processing space 31a can maintain a predetermined temperature.

On the other hand, although the IPA liquid 71 (refer FIG. 4A) is used as the liquid for drying prevention in the embodiment, and CO ₂ is used as the processing fluid 70, a liquid other than IPA (eg, an organic solvent such as methanol) ) may be used as the liquid for preventing drying, or a fluid other than CO ₂ may be used as the processing fluid 70 .

Here, the processing fluid 70 in the supercritical state has a lower viscosity than a liquid (eg, the IPA liquid 71 ) and has a high ability to dissolve the liquid, and in addition to the processing fluid 70 in the supercritical state and There are no interfaces between liquids or gases in equilibrium. Accordingly, in the drying treatment using the processing fluid 70 in the supercritical state described above, since the liquid can be dried without being affected by surface tension, pattern collapse of the pattern P can be suppressed.

On the other hand, a part of the IPA liquid 71 applied to the upper surface Wa of the wafer W also returns to the lower surface Wb. In addition, when the entire lower surface Wb of the wafer W is in contact with the holding part 32 , the processing fluid 70 is not supplied to the lower surface Wb side, and thus the processing in a supercritical state is performed on the lower surface Wb side. The drying process using the fluid 70 is not performed.

Thereby, the IPA liquid 71 returning to the lower surface Wb is dried on the lower surface Wb without being dissolved in the processing fluid 70, and there is a possibility that particles may be generated in such a dry place.

Therefore, according to the drying processing unit 17 according to the embodiment, the generation of particles on the lower surface Wb of the wafer W can be suppressed by the holding portion 32 having a predetermined configuration.

<Embodiment>

Then, the detail of the drying processing unit 17 which concerns on embodiment is demonstrated, referring FIGS. 4A and 4B. 4A is a cross-sectional view showing an example of the internal configuration of the dry processing unit 17 according to the embodiment, and FIG. 4B is a plan view showing an example of the internal configuration of the dry processing unit 17 according to the embodiment. Moreover, among the cross-sectional views shown in FIG. 4A, about the fluid supply header 38 and the holding|maintenance part 32, it is sectional drawing when cut along the A-A line shown in FIG. 4B.

On the other hand, until the state shown in FIG. 4A is reached, the wafer W to which the IPA liquid 71 is first applied is held by the holding unit 32 and loaded into the drying processing unit 17 . Next, the processing fluid 70 is supplied into the drying processing unit 17 through the fluid supply header 39 (see FIG. 3 ), so that the processing space 31a of the body 31 is filled with the processing fluid 70 . and the pressure is raised to the desired pressure.

And, as shown in FIG. 4A , the processing fluid 70 is supplied from the fluid supply header 38 , and the processing fluid 70 is discharged from the fluid discharge header 40 , and the fluid supply header 38 and A process fluid 70 flows between the fluid discharge headers 40 . On the other hand, since the fluid supply header 39 does not supply the processing fluid 70 when the processing fluid 70 flows, illustration of the fluid supply header 39 is omitted in FIG. 4A .

The processing fluid 70 is provided on the side of the wafer W, for example, and covers the upper surface Wa of the wafer W from the fluid supply header 38 with the supply port 38a oriented in the substantially horizontal direction. It flows toward the member 33 . In addition, the processing fluid 70 changes its direction downward in the vicinity of the cover member 33 , passes through the opening 32a formed in the holding part 32 , and passes through the outlet 40a of the fluid discharge header 40 . flow towards On the other hand, the processing fluid 70 flows in a laminar flow, for example.

Here, in the embodiment, the holding part 32 has a plurality of supporting parts 41 . The plurality of support parts 41 protrude upward from a predetermined location on the upper surface of the flat plate-shaped holding part 32 , respectively. The support part 41 is, for example, in the shape of a round pin.

Moreover, each upper end in the some support part 41 is arrange|positioned on the substantially same plane in the horizontal direction. And, the wafer W is held by the holding part 32 so that the front-end|tip of these several support parts 41 and the lower surface Wb of the wafer W may contact.

Accordingly, as shown in FIG. 4A , the wafer W can be held so that at least a part of the lower surface Wb of the wafer W is exposed to the processing space 31a. In addition, the processing fluid 70 may also flow between the lower surface Wb of the wafer W and the holding part 32 .

Therefore, even if the IPA liquid 71 applied to the upper surface Wa of the wafer W returns to the exposed lower surface Wb, the IPA liquid 71 adhering to the lower surface Wb is treated with the supercritical state processing fluid ( 70) can be contacted.

That is, since the IPA liquid 71 returning to the lower surface Wb can also be dried by the processing fluid 70 , drying of the IPA liquid 71 without being dissolved in the processing fluid 70 can be suppressed. can Therefore, according to the embodiment, on the lower surface Wb of the wafer W, it is possible to suppress the generation of particles due to the IPA liquid 71 that is not dried by the processing fluid 70 .

In addition, the shape of the support part 41 is not limited to a round pin shape, Other shapes (for example, a shape elongate in the flow direction of the processing fluid 70) may be sufficient. In addition, although the holding unit 32 having seven supporting units 41 is shown in FIG. 4B , the number of the supporting units 41 is not particularly limited, and if the wafer W can be held by the holding unit 32 , Any number or arrangement may be used.

In addition, in embodiment, as shown in FIG. 4A, what is necessary is just to make the front-end|tip part of the support part 41 round. Thereby, since the contact area between the front end of the support part 41 and the lower surface Wb of the wafer W can be reduced, the exposed area of the lower surface Wb can be increased. Accordingly, on the lower surface Wb of the wafer W, the generation of particles due to the IPA liquid 71 that is not dried by the processing fluid 70 can be further suppressed.

In addition, in the embodiment, the outer periphery of the lower surface Wb of the wafer W may be exposed by bringing the support portion 41 into contact with a location other than the outer periphery of the lower surface Wb of the wafer W. Because, when the IPA liquid 71 applied to the upper surface Wa returns to the lower surface Wb, it is mainly attached to the outer periphery of the lower surface Wb. By exposing the outer periphery of the lower surface Wb by the support part 41 , , because the IPA liquid 71 returning to the lower surface Wb can be effectively dried. Therefore, according to the embodiment, it is possible to effectively suppress the generation of particles due to the IPA liquid 71 .

In addition, in the embodiment, the supply port 38a of the fluid supply header 38 is connected to the wafer so that the direction of the processing fluid 70 discharged from the fluid supply header 38 is toward the side surface Wc of the wafer W. It is arranged on the same plane as (W) and is oriented in the substantially horizontal direction.

In this way, by disposing the fluid supply header 38 so that the direction of the discharged processing fluid 70 faces the side surface Wc of the wafer W, as shown in FIG. 4A , the upper surface ( The processing fluid 70 may flow through each of Wa) and the lower surface Wb. Accordingly, the processing fluid 70 can be sufficiently brought into contact with both the IPA liquid 71 applied to the upper surface Wa and the IPA liquid 71 returned to the lower surface Wb.

Therefore, according to the embodiment, the drying process of the IPA liquid 71 applied to the upper surface Wa and the drying process of the IPA liquid 71 returning to the lower surface Wb are compatible.

On the other hand, it is not necessary to arrange the fluid supply header 38 so that the discharged processing fluid 70 always faces the side surface Wc of the wafer W. If the processing fluid 70 can be sufficiently brought into contact with both the IPA liquid 71 applied to the upper surface Wa and the IPA liquid 71 returned to the lower surface Wb, the fluid supply header 38 can be arranged in any arrangement. It can be installed in either direction.

Further, in the embodiment, the holding unit 32 may further include a shift suppression unit 42 that suppresses the wafer W from shifting downstream due to the flow of the processing fluid 70 . Such a shift suppression part 42 protrudes upward from a predetermined location in the flat plate-shaped holding part 32, and is provided so that it may adjoin the downstream side surface Wc of the wafer W. As shown in FIG.

Accordingly, even if the wafer W is likely to be pushed downstream by the flow of the processing fluid 70 , it is possible to suppress the wafer W from shifting to the downstream side. On the other hand, although the holding part 32 having two shift suppression parts 42 is shown in FIG. 4B, the number of shift suppression parts 42 is not particularly limited, and if it is possible to suppress shift of the wafer W, any The number or arrangement may be sufficient.

In addition, in embodiment, what is necessary is just to comprise the support part 41 and the shift|offset|difference suppression part 42 with a polymer resin. Thereby, when the support part 41 or the shift|offset|difference suppression part 42 and the wafer W come into contact, it can suppress the lower surface Wb and the side surface Wc of the wafer W from being scraped off.

In addition, in the embodiment, if a shape corresponding to the bevel shape formed on the side surface Wc of the wafer W is provided to the side surface opposite to the side surface Wc of the wafer W in the displacement suppression portion 42 , good night. By providing such a shape, the contact area between the side surface Wc and the displacement suppressing portion 42 increases, and the force applied per unit area of the contact portion decreases, so that the wafer W is caused by the displacement suppression portion 42 It is possible to further suppress the side Wc of the shaving.

<Modified example>

Subsequently, various modifications of the drying processing unit 17 according to the embodiment will be described with reference to FIGS. 5 to 7 . 5 is a cross-sectional view showing an example of the internal configuration of the drying processing unit 17 according to Modification 1 of the embodiment. In addition, in the following description, the same code|symbol is attached|subjected to each component in the above-mentioned embodiment, and the same code|symbol is attached|subjected, and description may be abbreviate|omitted about the point similar to embodiment.

As shown in FIG. 5 , in the first modification, the flow of the processing fluid 70 is regulated between the fluid supply header 38 and the side surface Wc of the wafer W in the inside of the body 31 . A rectifying plate 43 is installed. In addition, by the rectifying plate 43 , it is possible to smoothly flow the processing fluid 70 to the upper surface Wa side and the lower surface Wb side of the wafer W, respectively. Accordingly, the processing fluid 70 can be smoothly brought into contact with both the IPA liquid 71 applied to the upper surface Wa and the IPA liquid 71 returned to the lower surface Wb.

Therefore, according to Modification Example 1, the drying process of the IPA liquid 71 applied to the upper surface Wa and the drying process of the IPA liquid 71 returning to the lower surface Wb can be made compatible further.

In addition, in the first modification, as shown in FIG. 5 , the rectifying plate 43 may be formed to have a shape that becomes wider toward the end as it approaches the wafer W in a cross-sectional view. Thereby, since the flow of the processing fluid 70 can be efficiently divided, the processing fluid 70 discharged from the supply port 38a is more smoothly transferred to the upper surface Wa side of the wafer W. It can be made to flow to the side of the upper and lower surface (Wb).

6 is a cross-sectional view showing an example of the internal configuration of the drying processing unit 17 according to Modification Example 2 of the embodiment. As shown in FIG. 6 , in the second modification, the fluid supply header 38 includes a first supply port 38a1 for discharging the processing fluid 70 toward the upper surface Wa side of the wafer W; A second supply port 38a2 for discharging the processing fluid 70 toward the lower surface Wb side of the wafer W is provided.

In this way, a dedicated supply port (first supply port 38a1 ) for discharging the processing fluid 70 to the upper surface Wa side of the wafer W, and the processing fluid to the lower surface Wb side of the wafer W By forming a dedicated supply port (second supply port 38a2 ) for discharging the 70 , respectively, the processing fluid 70 is smoothly supplied to the upper surface Wa side and the lower surface Wb side of the wafer W, respectively. can be distributed.

Accordingly, the processing fluid 70 can be smoothly brought into contact with both the IPA liquid 71 applied to the upper surface Wa and the IPA liquid 71 returned to the lower surface Wb. Therefore, according to the second modification, the drying process of the IPA liquid 71 applied to the upper surface Wa and the drying process of the IPA liquid 71 returning to the lower surface Wb can be further made compatible.

In the second modification, for example, as shown in FIG. 6 , the first supply port 38a1 is formed on the upper side of the side facing the wafer W in the fluid supply header 38 , and the second supply port 38a1 is formed on the second supply port ( 38a2) may be formed in the lower part of the same side.

On the other hand, in the second modification, the baffle plate 43 is not provided between the fluid supply header 38 and the wafer W, but as shown in FIG. 7 , the fluid supply header 38 and the wafer W are not provided. A rectifying plate 43 may be provided between them. 7 is a cross-sectional view showing an example of the internal configuration of the drying processing unit 17 according to Modification Example 3 of the embodiment.

In this way, the first supply port 38a1 and the second supply port 38a2 are formed in the fluid supply header 38, and a rectifying plate ( 43), the processing fluid 70 discharged from the first supply port 38a1 and the second supply port 38a2, respectively, does not interfere with each other, and the upper surface Wa side and the lower surface Wb of the wafer W ) can be distributed.

Thereby, the processing fluid 70 discharged from the fluid supply header 38 can flow more smoothly to the upper surface Wa side and the lower surface Wb side of the wafer W. Therefore, according to Modification Example 3, the drying process of the IPA liquid 71 applied to the upper surface Wa and the drying process of the IPA liquid 71 returning to the lower surface Wb can be further compatible.

On the other hand, in the modified example 3 shown in FIG. 7 , the baffle plate 43 is attached to a predetermined location inside the body 31 , but, for example, the baffle plate 43 is attached to the fluid supply header 38 . You may attach between the 1st supply port 38a1 and the 2nd supply port 38a2. Further, in the modified example 3, as in the second modified example, the rectifying plate 43 may not have a shape that becomes wider toward the end in a cross-sectional view.

Then, the detail of the drying processing unit 17 which concerns on the modification 4 of embodiment is demonstrated, referring FIGS. 8A and 8B. 8A is a cross-sectional view showing an example of the internal configuration of the dry processing unit 17 according to Modification Example 4 of the embodiment, and FIG. 8B is an example of the internal configuration of the dry processing unit 17 according to Modification Example 4 of the embodiment. is a plan view showing

On the other hand, among the cross-sectional views shown in FIG. 8A , the fluid supply header 38 and the holding part 32 are cross-sectional views taken along the line B-B shown in FIG. 8B .

In Modification Example 4, the wafer W is supported by one round pole support 41 instead of by the plurality of fin-shaped support portions 41 as in the embodiment. are doing In this way, by supporting the wafer W by the large support part 41 , the wafer W can be supported more stably. Accordingly, according to the fourth modification, the drying treatment using the processing fluid 70 in the supercritical state can be performed more stably.

In addition, in the fourth modification, similarly to the embodiment, the outer peripheral portion of the lower surface Wb of the wafer W is exposed by bringing the support part 41 into contact with a location other than the outer peripheral portion on the lower surface Wb of the wafer W. good to do Thereby, since the IPA liquid 71 returning to the lower surface Wb can be effectively dried, generation of particles due to the IPA liquid 71 can be effectively suppressed.

On the other hand, in the fourth modified example, since the support part 41 is formed in a large round shape, the processing fluid 70 can also smoothly flow downstream from the lower surface Wb side of the wafer W. In addition, the shape of the support part 41 is not limited to a round large size, Other shapes may be sufficient.

In addition, in the fourth modification, as shown in FIG. 8A , the edge of the upper surface of the support part 41 may be rounded. By setting it as such a shape, it can suppress that the lower surface Wb of the wafer W is scraped by the support part 41. As shown in FIG.

As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment, Unless it deviates from the meaning, various changes are possible. For example, you may combine the support part 41 in the modification 4, and the rectification|straightening plate 43 in the modification 1.

In addition, you may combine the support part 41 of the 4th modification, and the fluid supply header 38 of the 2nd modification. In addition, you may combine the support part 41 in the 4th modification, and the fluid supply header 38 and the rectification|straightening plate 43 in the 3rd modification.

A substrate processing apparatus according to the embodiment is a substrate processing apparatus in which a drying process is performed for drying a substrate (wafer W) having a liquid film formed on an upper surface Wa having a pattern using a processing fluid 70 in a supercritical state. , a holding unit 32 for holding the substrate (wafer W), and a supply unit (fluid supply header 38 ) for supplying the processing fluid 70 into the processing space 31a. And the holding part 32 has a support part 41 which protrudes upwardly and contacts the lower surface Wb of the board|substrate (wafer W), and supports the board|substrate (wafer W), and the board|substrate (wafer W) W)], at least a part of the lower surface Wb of the substrate (wafer W) is exposed to the processing space 31a by the support part 41 . Accordingly, in the drying method using the processing fluid 70 in the supercritical state, the generation of particles on the lower surface Wb of the wafer W can be suppressed.

Further, in the substrate processing apparatus according to the embodiment, when the holding unit 32 holds the substrate (wafer W), the supporting unit 41 forms the outer periphery of the lower surface Wb into the processing space 31a. expose to Thereby, generation of particles due to the IPA liquid 71 can be effectively suppressed.

Further, the substrate processing apparatus according to the embodiment further includes a baffle plate 43 provided between the supply unit (fluid supply header 38) and the side surface Wc of the substrate (wafer W). Thereby, the drying process of the IPA liquid 71 applied to the upper surface Wa and the drying process of the IPA liquid 71 returning to the lower surface Wb can be made compatible further.

Further, in the substrate processing apparatus according to the embodiment, the direction of the processing fluid 70 discharged from the supply unit (fluid supply header 38 ) is the side surface of the substrate (wafer W) held by the holding unit 32 . (Wc) is facing. Thereby, the drying process of the IPA liquid 71 applied to the upper surface Wa and the drying process of the IPA liquid 71 returning to the lower surface Wb can be made compatible.

Further, in the substrate processing apparatus according to the embodiment, the supply unit (fluid supply header 38 ) includes a first supply port for discharging the processing fluid 70 toward the upper surface Wa side of the substrate (wafer W). 38a1 and a second supply port 38a2 for discharging the processing fluid 70 toward the lower surface Wb side of the substrate (wafer W). Thereby, the drying process of the IPA liquid 71 applied to the upper surface Wa and the drying process of the IPA liquid 71 returning to the lower surface Wb can be made compatible further.

Further, in the substrate processing apparatus according to the embodiment, the holding unit 32 protrudes upward and is adjacent to the side surface Wc of the substrate (wafer W), and is discharged from the supply unit (fluid supply header 38 ). The substrate (wafer W) further includes a shift suppression portion 42 that suppresses shifting of the substrate (wafer W) by the processing fluid 70 to be used. Accordingly, even if the wafer W is likely to be pushed downstream by the flow of the processing fluid 70 , it is possible to suppress the wafer W from shifting to the downstream side.

Further effects and modifications can be easily derived by those skilled in the art. For this reason, the more extensive aspect of this invention is not limited to the specific detail and typical embodiment shown and described as mentioned above. Accordingly, various modifications are possible without departing from the spirit or scope of the overall inventive concept defined by the appended claims and their equivalents.

W: Wafer Wa: Top
Wb: You Wc: Side
1: Substrate processing system 4: Control unit
16: cleaning processing unit 17: drying processing unit
19: control unit 31: main body
31a: processing space 32: holding part
33: cover member 34: opening
38: fluid supply header 38a: supply port
38a1: first supply port 38a2: second supply port
41: support part 42: misalignment suppression part
43: baffle plate 70: treatment fluid
71: IPA liquid

Claims (7)

A substrate processing apparatus in which a drying process of drying a substrate having a liquid film formed on an upper surface having a pattern is performed using a processing fluid in a supercritical state, the substrate processing apparatus comprising:
a holding part for holding the substrate;
a supply unit for supplying the processing fluid into the processing space;
a rectifier plate installed between the supply unit and a side surface of the substrate
including,
The holding unit,
and a support portion protruding upward and in contact with the lower surface of the substrate to support the substrate, wherein when the substrate is held, at least a portion of the lower surface of the substrate is exposed to the processing space by the support portion,
The supply unit includes a plurality of supply ports formed side by side along the horizontal direction,
The rectifying plate may extend in a horizontal direction to face the plurality of supply ports. According to claim 1, wherein the rectifying plate,
The substrate processing apparatus is formed to have a shape that becomes wider toward the end as it approaches the substrate when viewed in cross section. According to claim 1 or 2, wherein the supply unit,
The substrate processing apparatus which is provided on the side of the said board|substrate held by the said holding part. According to claim 1 or 2, wherein the holding portion,
When the substrate is held, an outer peripheral portion of the lower surface is exposed to the processing space by the support portion. The substrate processing apparatus according to claim 1 or 2, wherein a direction of the processing fluid discharged from the supply unit is toward a side surface of the substrate held in the holding unit. A substrate processing apparatus in which a drying process of drying a substrate on which a liquid film is formed on an upper surface having a pattern is performed using a processing fluid in a supercritical state, the substrate processing apparatus comprising:
a holding part for holding the substrate;
a supply unit for supplying the processing fluid into the processing space;
a rectifying plate installed between the supply unit and a side surface of the substrate
including,
The holding unit,
and a support portion protruding upward and in contact with the lower surface of the substrate to support the substrate, wherein when the substrate is held, at least a portion of the lower surface of the substrate is exposed to the processing space by the support portion,
The supply unit includes a first supply port for discharging the processing fluid toward the upper surface of the substrate, and a second supply port for discharging the processing fluid toward the lower surface of the substrate,
The baffle plate is disposed between the processing fluid discharged from the first supply port and the processing fluid discharged from the second supply port. According to claim 1 or 2, wherein the holding portion,
The substrate processing apparatus of claim 1, further comprising: a shift suppressing part protruding upward and adjacent to a side surface of the substrate to suppress shifting of the substrate by the processing fluid discharged from the supply part.

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