JP2003045837A - Temperature adjusting apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase processing efficiency by putting a CO2 gas supplied onto the surface of a semiconductor wafer in a uniform supercritical state with energy saving upon cleaning and drying the wafer, and also to put the CO2 gas supplied onto the processing surface of the wafer in the uniform supercritical state. SOLUTION: A reaction processing chamber 10 is provided in the interior of a reaction bath 2a. A temperature adjusting stage (first temperature adjusting means) 11 and a temperature adjusting plate (second temperature adjusting means) 14 for adjusting the temperature of CO2 (cleaning liquid) on a semiconductor wafer (to be processed) 18 are provided within the chamber 10. The stage 11 is provided with a temperature adjusting surface 12, while the plate 14 is provided with a temperature adjusting surface 15. The temperature adjusting surface 12 is located as opposed to the temperature adjusting surface 15, and the wafer 18 is mounted on the temperature adjusting surface 12 so as to be disposed between the temperature adjusting surfaces 12 and 15.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature control device for controlling the temperature of a cleaning liquid supplied to a reaction processing chamber.

[0002]

2. Description of the Related Art A very fine structure is formed on the surface of a semiconductor wafer or a micromachine, which requires cleaning and drying of the surface.

A conventional apparatus for performing cleaning and drying processing is described in, for example, Japanese Patent Application Laid-Open No. 2000-340540.
This device is called a supercritical drying device. FIG. 7 is a diagram showing a conventional supercritical drying device.

A reaction processing chamber 103 is provided inside the reaction tank 102.
Is provided. A heater 1 for heating the cleaning liquid supplied into the reaction processing chamber 103 is provided around the reaction processing chamber 103.
10 are provided.

The cleaning process and the drying process of the semiconductor wafer 101 are performed as follows.

When the valve 106 is opened, the pump 105
As a cleaning liquid, carbon dioxide (hereinafter referred to as “C”) from the CO ₂ cylinder 104 to the reaction processing chamber 103 via the supply path 111.
O ₂ ”) is supplied. At this time, the reaction processing chamber 103
CO ₂ is in a liquid state in which the supercritical temperature is lower than 31 ° C. and the supercritical pressure is higher than 7.3 MPa (megapascal). This liquid state CO ₂ causes the reaction processing chamber 103
Water and other substances attached to the inner surface of the substrate and the surface 101a to be cleaned of the semiconductor wafer 101 are roughly removed. The removed water and the like, together with CO _{2 in a} liquid state, are contained in the reaction processing chamber 10
3 is discharged to the outside through the discharge passage 112.

However, the surface to be cleaned 10 of the semiconductor wafer 101
Water and other substances remain between the microstructures 1a. Therefore, CO ₂ is brought into a supercritical state in order to remove these residual substances.

The heater 110 is heated when electric energy is supplied from the power supply 109 while supplying liquid CO ₂ to the reaction processing chamber 103. When the reaction tank 102 is heated by the heater 110, the temperature of the reaction tank 102 itself rises and the temperature inside the reaction processing chamber 103 rises. Then, the temperature of liquid CO _{2 in} the reaction processing chamber 103 rises. At this time, the valve 107 is adjusted so that the pressure of CO _{2 in} the reaction processing chamber 103 becomes a supercritical pressure of about 7.3 MPa. When the temperature of CO ₂ exceeds the supercritical temperature of 31 ° C, CO
₂ is in a supercritical state. CO _{2 in the} supercritical state enters between the microstructures on the surface to be processed 101a of the semiconductor wafer 101 to dissolve out the residual substance or replace it with the residual substance. Thus, only CO _{2 in a} supercritical state remains between the fine structures on the surface to be processed 101a.

The heater 110 causes C in the reaction processing chamber 103.
When the valve 107 is opened while O ₂ is kept at the supercritical temperature or higher, the pressure of CO ₂ in the reaction processing chamber 103 decreases. Then, CO ₂ turns into a gas state without passing through a liquid state, and volatilizes from between the microstructures on the surface to be processed 101a.

In some cases, instead of the heater 110, a flow path 110 'through which a fluid flows is provided, and in place of the power source 109, a fluid temperature controller 109' for adjusting the temperature of the fluid is provided. In this case, the hot water whose temperature has been adjusted by the fluid temperature controller 109 'is supplied to the flow channel 110'.

In this way, the cleaning process and the drying process of the semiconductor wafer 101 are performed.

Another supercritical drying device is disclosed in Japanese Patent Laid-Open No. 9-23.
No. 2271. This supercritical drying device will be described with reference to FIG.

A stage 120 on which the semiconductor wafer 101 is placed is provided inside the reaction processing chamber 103, and a heater 121 is provided inside the stage 120.

This device is similar to the supercritical drying device described in Japanese Unexamined Patent Publication No. 2000-340540, in which the heater 110 is used.
The reaction tank 102 is not heated by the heater 121, but the semiconductor wafer 101 itself is heated by the heater 121. Then, the temperature of CO ₂ on the surface to be cleaned 101a is increased by the semiconductor wafer 101. And this CO ₂ is supercritical state.

[0015]

However, the conventional supercritical dryer has the following problems.

According to the supercritical drying apparatus as described in JP 2000-340540 A, the reaction processing chamber 10
In order to bring CO ₂ of No. 3 into a supercritical state, temperature control means 1
The entire reaction vessel 102 must be warmed by 10. Since the reaction tank 102, which is a high-pressure container, has a thickness from the outer surface to the reaction processing chamber 103, it takes a lot of time and heat energy before the heat of the heater 110 is transferred to the reaction processing chamber 103. Therefore, when a large number of semiconductor wafers are washed and dried, the processing efficiency is lowered and energy loss occurs.

According to the supercritical drying apparatus described in Japanese Patent Laid-Open No. 9-232271, the surface to be processed of the semiconductor wafer is always in contact with low temperature CO ₂ . Moreover, CO ₂ is indirectly heated by heating the semiconductor wafer. Therefore, although it is not as good as the supercritical drying apparatus described in JP 2000-340540 A, it takes a lot of time to bring CO ₂ into a supercritical state in this supercritical drying apparatus, and many semiconductor wafers are required. When the washing and drying treatments are carried out, the treatment efficiency decreases.

The present invention has been made in view of the above circumstances, and makes CO ₂ supplied onto the surface to be processed of the semiconductor wafer into a supercritical state in an energy-saving manner at the time of cleaning and drying the semiconductor wafer. Therefore, the first problem to be solved is to improve the processing efficiency.

According to the supercritical drying apparatus disclosed in Japanese Patent Laid-Open No. 9-2322271, CO ₂ flowing along the semiconductor wafer removes heat from the heated surface of the semiconductor wafer. At this time, the surface to be processed on the upstream side takes more heat than the surface to be processed on the downstream side. Therefore, temperature distribution occurs on the surface to be processed of the semiconductor wafer, and the supercritical state of CO ₂ is not uniform. Therefore, there is a problem that CO ₂ remains without being removed from the surface to be processed.

The present invention has been made in view of these circumstances, and it is the _{first step} to uniformly bring the CO ₂ supplied onto the surface to be processed of the semiconductor wafer into a supercritical state at the time of cleaning and drying the semiconductor wafer. The second problem is to be solved.

[0021]

Therefore, the first invention is to supply a cleaning liquid to a reaction processing chamber containing an object to be processed so that the cleaning liquid on the object is supercritical from the liquid temperature. In the temperature control device for controlling the temperature up to the above temperature, the first temperature control means and the second temperature control means are opposed to each other with the object to be treated interposed, and the temperature control device is provided inside the reaction treatment chamber. Is characterized by.

The first invention will be described with reference to FIG.

A reaction processing chamber 10 is provided inside the reaction tank 2. Inside the reaction processing chamber 10, a temperature adjusting stage (first temperature adjusting means) 11 for adjusting the temperature of CO ₂ (cleaning liquid) on the semiconductor wafer (object to be processed) 18 and a temperature adjusting plate (second temperature adjusting). Means) 14 are provided. A temperature adjusting surface 12 is provided on the temperature adjusting stage 11, and a temperature adjusting surface 15 is provided on the temperature adjusting plate 14. The temperature adjusting surface 12 and the temperature adjusting surface 15 face each other, and the semiconductor wafer 18 is placed on the temperature adjusting surface 12 so as to be sandwiched between the temperature adjusting surfaces 12 and 15.

In the reaction processing chamber 10, liquid CO_TwoSupplied by
When the temperature control surface 12 is heated, the semiconductor wafer
C on the surface 18a to be processed by heating 18 itself
O_TwoIs heated. When the temperature control surface 15 is heated,
In the case of CO on the surface 18a to be treated _TwoIs heated. Each temperature adjustment
Processing of the semiconductor wafer 18 by heating the nodal surfaces 12 and 15
CO on surface 18a_TwoBecomes a supercritical state, and the processed surface 18
Washing and drying of a are performed.

According to the first invention, only the semiconductor wafer itself and the surface to be processed of the semiconductor wafer are heated. Therefore, CO ₂ on the surface to be processed of the semiconductor wafer can be efficiently heated, and the supercritical state of CO ₂ can be realized by energy saving. Further, CO ₂ can be brought into a supercritical state quickly. Therefore, the processing efficiency of the cleaning and drying processing is improved.

According to a second aspect of the present invention, in the first aspect, at least one of the first and second temperature adjusting means is
It is characterized in that the temperature of the cleaning liquid in each region of the object to be processed is controlled independently.

According to a third invention, in the second invention, at least one of the first and second temperature adjusting means is
The second and third inventions, which are characterized by being divided into a plurality of regions, will be described with reference to FIGS. 5 (a) and 5 (b).

The semiconductor wafer (object to be processed) 18 has a temperature adjusting surface 52 of a temperature adjusting stage (first temperature adjusting means) 51.
And the temperature control surface 54 of the temperature control plate (second temperature control means) 53. Processed surface 18a of semiconductor wafer 18
In order to make the temperature of CO ₂ (cleaning liquid) in each region of the temperature control surfaces 52 and 54 different,
52b, 52c, 52d, 52e, and temperature control area 5
4a, 54b, 54c, 54d, 54e.

[0029] If the CO ₂ flow in the direction of the arrow in FIG. 5 (b), the surface temperature of the target surface 18a on the upstream side of the CO ₂ is high, the surface temperature of the target surface 18a on the downstream side of the CO ₂ Will be lower. Therefore, each area 5 of the temperature control surface 52
Each area 54a of the temperature and temperature control surface 54 of 2a to 52e
Temperature ~54e the upstream side of the CO _2, i.e. temperature control region 52a, 54a side, the temperature is controlled to be higher than the downstream side, that temperature control region 52e, 54e side, the temperature of the CO ₂ .

According to the second and third inventions, the temperature control surface 5
2, 54 have a plurality of temperature control regions 52a to 52e, 54a.
54e are provided, and the temperature of each is independently adjusted. Therefore, the temperature on the surface to be processed 18a of the semiconductor wafer 18 can be adjusted to be uniform. Therefore supercritical state of the CO ₂ becomes uniform, thereby preventing the CO ₂ remains in the treated surface.

A fourth invention is characterized in that, in the first invention, one of the first and second temperature adjusting means is provided with a hole for supplying a cleaning liquid onto the object to be processed.

The fifth invention is characterized in that, in the first invention, one of the first and second temperature adjusting means is provided with a hole for discharging the cleaning liquid to the outside.

The fourth and fifth inventions will be described with reference to FIG.

When CO ₂ (cleaning liquid) is supplied from the direction A shown in FIG. 4A, the CO ₂ passes through the holes 48 of the temperature adjusting plate (second temperature adjusting means) 45 and the semiconductor wafer 18 is covered. It reaches the cleaning surface 18a. Further, CO ₂ passes through the hole 44 of the temperature adjusting stage (first temperature adjusting means) 41 and is discharged to the outside.

According to the fourth and fifth aspects, the holes 44 and 48 are provided in the temperature adjusting stage 41 and the temperature adjusting plate 45. Therefore, the supply of CO ₂ to the surface to be cleaned 18a and the discharge of CO ₂ from the surface to be cleaned 18a can be performed quickly.

According to the fourth aspect of the invention, the supplied CO ₂
Contact the surface to be cleaned 18a uniformly,
The temperature of CO _{2 on} a is uniform. Therefore CO ₂
The supercritical state becomes uniform, and CO ₂ does not remain on the surface to be treated.

A sixth invention is the first invention, wherein at least one of the first and second temperature adjusting means is:
It is characterized in that a flow path for flowing a medium for temperature control is provided inside.

The sixth invention will be described with reference to FIGS.

According to the sixth aspect of the present invention, when the cleaning and drying process of one semiconductor wafer is completed, cooling water (medium for temperature control) is caused to flow through the flow paths 21 and 22 to control the temperature control stage (first control). It is possible to rapidly cool the first temperature adjusting means 11) and the temperature adjusting plate (second temperature adjusting means) 12. Therefore, the processing efficiency of the cleaning and drying processing is further improved.

[0040]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a supercritical drying apparatus according to the present invention will be described below with reference to the drawings.

FIG. 1 is a diagram showing the configuration of this embodiment.

The reaction tank 2 of the supercritical drying apparatus 1 is a high-pressure vessel, and the reaction processing chamber 10 is provided inside. The reaction processing chamber 10 communicates with the CO ₂ cylinder 9 via the supply passage 4 and the pump 8 according to the opening operation of the valve 6, and is shut off from the CO ₂ cylinder 9 according to the closing operation of the valve 6. The reaction processing chamber 10 communicates with a recovery container (not shown) via the discharge path 5 in response to the opening operation of the valve 7, and is shut off from the recovery container in response to the closing operation of the valve 7.

In the reaction tank 2, a temperature adjusting stage 11 and a temperature adjusting plate 1 which will be described later are introduced from the outside to the inside of the reaction processing chamber 10.
4, an opening 2a for inserting the temperature adjusting stage 11 and the temperature adjusting plate 14 from the inside of the reaction processing chamber 10 to the outside is provided.

The integrated stage 3 comprises a temperature adjusting stage 11 and a temperature adjusting plate 14 sandwiching the semiconductor wafer 18, and a lid 16.

The temperature adjusting stage 11 is provided with a temperature adjusting surface 12 for releasing heat to the outside and absorbing heat from the outside to adjust the temperature of the outside. Three or more small protrusions are provided on the temperature control surface 12, and the semiconductor wafer 18 is placed on these protrusions. With these protrusions, a space is provided between the temperature control surface 12 and the semiconductor wafer 18. The gap is set to such an extent that the semiconductor wafer 18 is heated by the heating of the temperature control surface 12 and the CO _{2 on the} surface to be cleaned 18 a becomes a supercritical state. The semiconductor wafer 18 may be placed directly on the temperature control surface 12.

A temperature sensor 13 is provided on the temperature control surface 12. The temperature sensor 13 detects the temperature near the semiconductor wafer 18.

The temperature adjusting plate 15 is provided with a temperature adjusting surface 15 for releasing heat to the outside and absorbing heat from the outside to adjust the temperature of the outside. The temperature adjusting surface 15 faces the surface to be cleaned 18 a of the semiconductor wafer 18 and the temperature adjusting surface 11 a of the temperature adjusting stage 11. A space is provided between the temperature control surface 15 and the surface to be cleaned 18 a of the semiconductor wafer 18. This void is set to such an extent that CO _{2 on the} surface to be cleaned 18 a is brought into a supercritical state by heating the temperature control surface 15.

FIG. 2 is a view showing the integrated stage 3 viewed from the direction A in FIG. Inside the temperature adjusting stage 11 and the temperature adjusting plate 15, channels 21 and 22 are spirally provided so that the surface temperatures of the temperature adjusting surfaces 12 and 15 are substantially uniform. The flow paths 21 and 22 may be provided as shown in FIG.

A medium for temperature control, for example, water is flown through the flow paths 21 and 22. When heating the temperature control surfaces 12 and 15, hot water is caused to flow through the flow paths 21 and 22, and
When cooling 2 and 15, cold water is flowed through the flow paths 21 and 22.

A heater may be provided instead of the flow paths 21 and 22.

The lid 16 is attached to the outer wall of the reaction tank 2 so as to cover the opening 2a of the reaction tank 2 with the temperature adjusting stage 11 and the temperature adjusting plate 15 inserted in the reaction processing chamber 10.

Next, the cleaning process and the drying process of the semiconductor wafer 18 will be described.

Temperature adjusting stage 11 and temperature adjusting plate 15
The semiconductor wafer 18 is placed on the temperature adjustment surface 12 of the temperature adjustment stage 11 so as to be sandwiched between the temperature adjustment stage 11 and the temperature adjustment stage 11, and the temperature adjustment stage 11 and the temperature adjustment plate 15 are inserted into the reaction processing chamber 10.

When the valve 6 is opened, CO ₂ is supplied as a cleaning liquid from the CO ₂ cylinder 9 to the reaction processing chamber 10 via the supply passage 4 by the pump 8. At this time, the reaction processing chamber 1
CO ₂ of 0 is in a liquid state in which the supercritical temperature is lower than 31 ° C. and the supercritical pressure is higher than 7.3 MPa (megapascal). This liquid CO ₂ roughly removes water and other substances attached to the inner surface of the reaction processing chamber 10 and the surface to be cleaned 18a of the semiconductor wafer 18. The removed water and the like are discharged from the reaction processing chamber 10 to the outside through the discharge path 5 together with liquid CO ₂ .

However, the surface to be cleaned 18a of the semiconductor wafer 18 is
Water and other substances remain between the microstructures.
Therefore, CO ₂ is brought into a supercritical state in order to remove these residual substances.

While CO _{2 in a} liquid state is supplied to the reaction processing chamber 10, hot water is caused to flow through the flow paths 21 and 22 of the temperature adjusting stage 11 and the temperature adjusting plate 15. The temperature of the hot water flowing through the flow paths 21 and 22 is adjusted so that the temperature detected by the temperature sensor 13 becomes a supercritical temperature of 31 ° C. or higher. At this time, the temperature adjustment of the temperature adjustment surfaces 12 and 15 may be performed at the same time, or may be performed independently.

Then, liquid CO on the surface to be cleaned 18a
_TwoIs heat from the temperature control surface 15 and the temperature control stage 11
Temperature from the semiconductor wafer 18 heated by
Rises. At this time, CO in the reaction processing chamber 103_TwoThe pressure of
The valve 107 so that the supercritical pressure becomes about 7.3 MPa.
Is adjusted. CO_TwoTemperature exceeds 31 ° C
And CO_TwoBecomes a supercritical state. CO in supercritical state_TwoIs
Between the fine structures on the surface to be cleaned 18 a of the semiconductor wafer 18.
Intrusion to dissolve out residual substances or replace residual substances
Be done. In this way, between the microstructures on the surface to be cleaned 18a,
CO in the critical state _TwoOnly remains.

Temperature adjusting stage 11 and temperature adjusting plate 15
If the valve 107 is opened while the temperature is maintained above the supercritical temperature, the pressure of CO ₂ in the reaction processing chamber 103 decreases. Then, CO ₂ turns into a gas state without passing through a liquid state, and volatilizes from between the microstructures on the surface to be processed 101a.

In this way, the cleaning process and the drying process of the semiconductor wafer 101 are performed.

According to this embodiment, only the semiconductor wafer itself and the surface to be processed of the semiconductor wafer are heated. Therefore, CO ₂ on the surface to be processed of the semiconductor wafer can be efficiently heated, and the supercritical state of CO ₂ can be realized by energy saving. Further, CO ₂ can be brought into a supercritical state quickly. Therefore, the processing efficiency of the cleaning and drying processing is improved.

When the cleaning and drying processing of one semiconductor wafer is completed, it is necessary to cool the temperature adjusting stage 11 and the temperature adjusting plate 15 in order to perform the cleaning and drying processing of the next semiconductor wafer. According to this embodiment, the flow paths 21, 2
By flowing the cooling water to 2, the temperature adjustment stage 11 and the temperature adjustment plate 15 can be rapidly cooled.
Therefore, the processing efficiency of the cleaning and drying processing is further improved.

Next, another embodiment of the integrated stage will be described.

FIG. 4 (a) is a diagram showing a second embodiment of the integrated stage, and FIG. 4 (b) is a diagram showing the integrated stage viewed from the direction A in FIG. 4 (a).

The integrated stage 40 is used for the semiconductor wafer 18
It is composed of a temperature adjustment stage 41 and a temperature adjustment plate 45 sandwiching the above, and a lid 49. The temperature adjusting stage 41 includes a temperature adjusting surface 42 on which the semiconductor wafer 18 is placed and a surface 43 opposite to the temperature adjusting surface 42, and further includes one or more holes 44 that connect the temperature adjusting surface 42 side and the surface 43 side. Temperature control plate 45
Is provided with a temperature adjusting surface 46 facing the semiconductor wafer 18 and a surface 47 opposite to the temperature adjusting surface 46.
It has one or more holes 48 communicating with the 7 side.

When the integrated stage 40 is used and CO ₂ is supplied from the direction A, the CO ₂ passes through the hole 48 from the surface 47 side of the temperature adjusting plate 45 to the temperature adjusting surface 46 side and the semiconductor wafer 18 is cleaned. Reach surface 18a. Further, CO ₂ passes through the hole 44 from the temperature adjusting surface 42 side of the temperature adjusting stage 41 to the surface 43 side and is discharged.

According to the second embodiment, holes 44 and 48 are provided in the temperature adjusting stage 41 and the temperature adjusting plate 45. Therefore, the supply of CO ₂ to the surface to be cleaned 18a and the discharge of CO ₂ from the surface to be cleaned 18a can be performed quickly.

Further, since the supplied CO ₂ uniformly contacts the surface 18a to be cleaned, the temperature of CO ₂ on the surface 18a to be cleaned becomes uniform. Therefore supercritical state of the CO ₂ becomes uniform, thereby preventing the CO ₂ remains in the treated surface.

It is desirable that the plurality of holes 44 and 48 be provided at equal intervals.

FIG. 5 (a) is a diagram showing a third embodiment of the integrated stage, and FIG. 5 (b) is a diagram showing the integrated stage viewed from the direction A in FIG. 5 (a).

The integrated stage 50 is used for the semiconductor wafer 18
It is composed of a temperature adjusting stage 51 and a temperature adjusting plate 53 sandwiching the above, and a lid 55.

The temperature adjusting stage 51 is the semiconductor wafer 18
Is provided with a temperature control surface 52. Temperature control surface 52
Are five temperature control regions 52a, 52b, 52c, 52
It is divided into d and 52e. Temperature control area 52a-5
Each of the 2e is provided with a temperature sensor, and the temperature is individually adjusted.

The temperature adjusting plate 53 has a temperature adjusting surface 54 facing the temperature adjusting surface 52 of the semiconductor wafer 18 and the temperature adjusting stage 51. The temperature control surface 54 is divided into five temperature control areas 54a, 54b, 54c, 54d and 54e. A temperature sensor is provided in each of the temperature adjustment regions 54a to 54e, and the temperature is individually adjusted.

As shown in FIG. 5A, when the supply path 4 is provided in the back of the paper and the discharge path 5 is provided in the front of the paper,
The liquid-state CO ₂ flows along the temperature control surfaces 52 and 54 and the semiconductor wafer 18, that is, in the direction of the arrow in FIG. 5B. At this time, temperature control area of the downstream portion of the temperature temperature adjustment region 54a of the upstream portion of the temperature control area 52a and a temperature control plate 53 of the upstream portion of the adjustment stage 51 has a large quantity of heat taken by the CO _2, while the temperature regulating stage 51 52e
Also, the amount of heat absorbed by CO ₂ is small in the temperature adjustment region 54e in the downstream portion of the temperature adjustment plate 53. In this way, a temperature distribution is generated on each of the temperature adjusting surfaces 52 and 54.

Therefore, in the temperature adjustment stage 51, the temperatures of the temperature adjustment regions 52b, 52c and 52d of the middle flow portion are adjusted to be higher than the temperatures of the temperature adjustment region 52e of the downstream portion, and the temperature adjustment region 52b of the middle flow portion is adjusted. ,
52c, 52d temperature control region 52 upstream of the temperature
The temperature of a is adjusted to be high. Further, the temperature adjusting regions 52b, 52c, 52d in the middle stream portion are adjusted so that the central portion 52c and the edge portions 52b, 52d have different temperatures.

Further, in the temperature adjusting plate 53, the temperature of the temperature adjusting regions 54b, 54c, 54d in the midstream portion is adjusted to be higher than the temperature of the temperature adjusting region 54e in the downstream portion, and the temperature adjusting region 54b in the midstream portion is adjusted. , 54c, 54d
The temperature of the upstream temperature adjustment region 54a is adjusted to be higher than the temperature of the above. Furthermore, the temperature control area 5 in the middle stream
4b, 54c and 54d are the central portion 54c and the edge portions 54b and 5b.
4d is adjusted to have a different temperature.

Thus, the surface to be cleaned 18 of the semiconductor wafer 18 is
The temperature of CO ₂ on a is adjusted uniformly.

The number of regions and their arrangement on each temperature control surface may be arbitrary.

According to the third embodiment, the temperature control surface 5
2, 54 have a plurality of temperature control regions 52a to 52e, 54a.
54e are provided, and the temperature of each is independently adjusted. Therefore, the temperature on the surface to be processed 18a of the semiconductor wafer 18 can be adjusted to be uniform. Therefore supercritical state of the CO ₂ becomes uniform, thereby preventing the CO ₂ remains in the treated surface.

FIG. 6 is a diagram showing a fourth embodiment of the integrated stage.

The integrated stage 60 is used for the semiconductor wafer 18
It is composed of a temperature adjusting stage 61 and a temperature adjusting plate 63 which sandwich the plate, and a lid 65.

The temperature adjusting stage 61 is the semiconductor wafer 18
And a temperature control surface 62 facing the. The temperature control surface 62 is provided with a plurality of fins 62a.

The temperature adjusting plate 63 has a temperature adjusting surface 64 facing the temperature adjusting surface 62 of the semiconductor wafer 18 and the temperature adjusting stage 61. A plurality of fins 6 are provided on the temperature control surface 64.
4a is provided.

According to the fourth embodiment, the temperature control surface 6
A plurality of fins 62a and 64a are provided on the second and the second 64, respectively.
Therefore, the contact area between the liquid CO ₂ and the temperature adjustment stage 61 and the temperature adjustment plate 63 can be increased,
CO ₂ can be rapidly brought into a supercritical state. Therefore, the processing efficiency of the cleaning and drying processing is improved.

Although the integrated stage in which the temperature adjusting stage, the temperature adjusting plate and the lid are integrated has been described, the temperature adjusting stage, the temperature adjusting plate and the lid may be separately provided.

The object to be cleaned and dried may be a micromachine or the like.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of the present embodiment.

FIG. 2 is a view showing the integrated stage as seen from the direction A in FIG.

3 is a diagram showing the integrated stage viewed from the direction A in FIG.

4 (a) is a diagram showing a second embodiment of the integrated stage, and FIG. 4 (b) is a diagram showing the integrated stage viewed from the direction A in FIG. 4 (a). .

5 (a) is a diagram showing a third embodiment of an integrated stage, and FIG. 5 (b) is a diagram showing the integrated stage seen from the direction A in FIG. 5 (a). .

FIG. 6 is a view showing a fourth embodiment of the integrated stage.

FIG. 7 is a diagram showing a conventional supercritical drying apparatus.

FIG. 8 is a diagram showing a conventional supercritical drying apparatus.

[Explanation of symbols]

3 Integrated Stage 10 Reaction Processing Chamber 11 Temperature Control Stage 12 Temperature Control Surface 14 Temperature Control Plate 15 Temperature Control Surface 18 Semiconductor Wafer

Claims (6)

[Claims] 1. A temperature control device for supplying a cleaning liquid to a reaction processing chamber containing an object to be processed, and controlling the temperature of the cleaning liquid on the object to be processed from a temperature in a liquid state to a temperature in a supercritical state, A temperature control device comprising a first temperature control means and a second temperature control means opposed to each other with the object to be processed interposed therebetween, and provided inside the reaction processing chamber. 2. The method according to claim 1, wherein at least one of the first and second temperature adjusting means independently adjusts the temperature of the cleaning liquid in each region of the object to be processed. Temperature control device. 3. The temperature adjusting device according to claim 2, wherein at least one of the first and second temperature adjusting means is divided into a plurality of regions. 4. The temperature adjusting device according to claim 1, wherein one of the first and second temperature adjusting means is provided with a hole for supplying a cleaning liquid onto the object to be processed. 5. The temperature adjusting device according to claim 1, wherein one of the first and second temperature adjusting means is provided with a hole for discharging the cleaning liquid to the outside. 6. The temperature control device according to claim 1, wherein at least one of the first and second temperature control means is provided with a flow path through which a temperature control medium is flown.