KR100304971B1 - heater block for film deposition in fabrication of semiconductor - Google Patents
heater block for film deposition in fabrication of semiconductor Download PDFInfo
- Publication number
- KR100304971B1 KR100304971B1 KR1019990038670A KR19990038670A KR100304971B1 KR 100304971 B1 KR100304971 B1 KR 100304971B1 KR 1019990038670 A KR1019990038670 A KR 1019990038670A KR 19990038670 A KR19990038670 A KR 19990038670A KR 100304971 B1 KR100304971 B1 KR 100304971B1
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- South Korea
- Prior art keywords
- heater block
- wafer
- heater
- thin film
- film deposition
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 230000008021 deposition Effects 0.000 title abstract description 5
- 239000003507 refrigerant Substances 0.000 claims abstract description 27
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 238000000427 thin-film deposition Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 7
- 239000000498 cooling water Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 16
- 238000000151 deposition Methods 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
Abstract
본 발명은 화학기상증착용 반응챔버의 히터블록의 구조 개선을 통해, 웨이퍼 에지 부분에서의 박막 증착을 억제하므로써 웨이퍼 표면에 증착되는 박막의 균일성을 도모할 수 있도록 한 것이다.The present invention is to improve the uniformity of the thin film deposited on the surface of the wafer by suppressing the deposition of the thin film on the wafer edge through the structure of the heater block of the chemical vapor deposition reaction chamber.
이를 위해, 본 발명은 화학기상증착용 반응챔버 내에 설치되는 히터블록에 있어서, 히터블록의 직경을 웨이퍼 직경을 벗어난 외측 영역으로 확장하는 한편, 웨이퍼 외측으로 확장된 영역 내에 웨이퍼 가장자리를 냉각시키기 위한 냉매덕트 및 히터가 추가적으로 구비되도록 한 것이다.To this end, the present invention is a heater block installed in the reaction chamber for chemical vapor deposition, the diameter of the heater block to extend the outer region beyond the wafer diameter, while the refrigerant for cooling the wafer edge in the region extended outside the wafer The duct and the heater are to be additionally provided.
Description
본 발명은 반도체소자 제조를 위한 박막 증착 공정용 히터블록에 관한 것으로서, 더욱 상세하게는 화학기상증착(CVD) 공정용 챔버 내에 설치되는 히터블록의 구조 개선을 통해 웨이퍼 에지부의 박막 증착을 억제할 수 있도록 한 것이다.The present invention relates to a heater block for a thin film deposition process for manufacturing a semiconductor device, and more particularly, it is possible to suppress thin film deposition on a wafer edge portion by improving a structure of a heater block installed in a chamber for chemical vapor deposition (CVD). It would be.
일반적으로, 화학기상증착(CVD;Chemical Vapour Deposition)공정은 특정의 반응기체들을 반응 용기속에 계속 투입하면서 적절한 조건을 유지시켜 주므로써 고체상의 물질을 웨이퍼 표면에 증착시키는 공정을 일컫는다.In general, chemical vapor deposition (CVD) refers to a process of depositing a solid material on the surface of a wafer by maintaining specific conditions while continuously injecting specific reactors into a reaction vessel.
도 1을 참조하여 종래의 화학기상증착용 반응챔버(1)의 구조를 살펴보면 다음과 같다.Referring to Figure 1, the structure of the conventional chemical vapor deposition reaction chamber 1 is as follows.
종래의 반응챔버(1)는 도 1에 도시된 바와 같이, 챔버 내측의 중앙부에 웨이퍼(5)가 안착되는 히터블록(3)이 위치하도록 설치되고, 상기 챔버 내측의 상부 벽면에는 히터블록(3)과 대향하도록 샤워헤드(2)가 설치된다.As shown in FIG. 1, the conventional reaction chamber 1 is installed such that the heater block 3 on which the wafer 5 is seated is positioned at the center of the chamber, and the heater block 3 is disposed on the upper wall of the chamber. The showerhead 2 is installed so as to face ().
이 때, 상기 히터블록(3) 내에는 히터(4)가 내장되고, 상기 히터(4)에는 외부로부터 히터(4)에 전원을 공급하는 전원선(8)이 연결된다.At this time, a heater 4 is built in the heater block 3, and a power line 8 for supplying power to the heater 4 from the outside is connected to the heater 4.
또한, 상기 샤워헤드(2) 하부면 상에는 복수개의 노즐공(9)이 형성된다.In addition, a plurality of nozzle holes 9 are formed on the lower surface of the shower head 2.
한편, 상기 챔버 상부 중앙에는 샤워헤드(2) 내부에 연통하여 상기 샤워헤드(2) 내측으로 약액(6)을 공급하는 약액공급구(7)가 설치된다.On the other hand, in the upper center of the chamber is connected to the shower head (2) is provided with a chemical liquid supply port (7) for supplying the chemical liquid 6 into the shower head (2).
이와 같이 구성된 종래 화학기상증착용 반응챔버(1)의 작용은 다음과 같다.The action of the conventional chemical vapor deposition reaction chamber 1 configured as described above is as follows.
먼저, 반응챔버(1) 내에 들어와 히터블록(3) 상면에 웨이퍼(5)가 안착되면, 히터블록(3)에 내장된 히터(4)에 전원이 인가되고, 이에 따라 히터(4)로부터 발생하는 열에 의해 웨이퍼(5)가 가열된다.First, when the wafer 5 enters into the reaction chamber 1 and rests on the top surface of the heater block 3, power is applied to the heater 4 embedded in the heater block 3, and thus generated from the heater 4. The wafer 5 is heated by the heat.
이 때, 상기 반응챔버(1) 내의 압력 조건은 450 Torr∼1 mTorr 이내로 설정되며, 히터블록(3)의 온도는 통상 200∼600℃ 이내로 설정된다.At this time, the pressure conditions in the reaction chamber 1 are set within 450 Torr to 1 mTorr, and the temperature of the heater block 3 is usually set within 200 to 600 ° C.
이에 따라, 웨이퍼(5)가 가열되어 소정의 온도에 도달하면, 공급라인을 통해공급되는 약액(6)(예: WF6가스)이 약액공급구(7)를 통해 샤워헤드(2) 내로 유입된 후, 샤워헤드(2) 저면의 노즐공(9)을 통해 분사되어 웨이퍼(5) 표면에 도포된다.Accordingly, when the wafer 5 is heated to reach a predetermined temperature, the chemical liquid 6 (eg, WF 6 gas) supplied through the supply line flows into the shower head 2 through the chemical liquid supply opening 7. Then, it is sprayed through the nozzle hole 9 at the bottom of the shower head 2 and applied to the surface of the wafer 5.
이와 같이 웨이퍼(5) 표면에 도포된 약액(6)은 열분해되는데, 이에 따라 휘발성가스(예; F, H, Cl)는 휘발되고, 잔류물(W, Si, Mo, Cu)은 웨이퍼(5) 표면에 증착되어 박막을 형성하게 된다.In this way, the chemical liquid 6 applied on the surface of the wafer 5 is thermally decomposed, whereby volatile gases (eg, F, H, Cl) are volatilized, and residues W, Si, Mo, Cu are deposited on the wafer 5. It is deposited on the surface to form a thin film.
한편, 종래에는 웨이퍼(5) 에지 부분에는 박막이 형성될 경우, 전체적인 박막의 들뜸현상이 일어나고, 후공정에 악영향을 끼치므로 박막이 형성되지 않아야 한다.On the other hand, in the related art, when a thin film is formed at the edge portion of the wafer 5, the entire phenomenon of the thin film is lifted up and adversely affects the post-process, so the thin film should not be formed.
이에 따라, 종래에는 웨이퍼(5) 에지 부분을 가리기 위해 새도우 링(shadow ring) 또는 클램프(clamp)를 사용하거나, 에지부에 불활성가스를 흘리므로써, 에지부에 막이 형성되는 현상을 방지하였다.Accordingly, in the related art, a shadow ring or a clamp is used to cover the edge portion of the wafer 5, or an inert gas flows in the edge portion, thereby preventing the formation of a film on the edge portion.
그러나, 이와 같은 종래에는 새도우 링이나 클램프를 사용할 경우에는 웨이퍼에 이물이 발생하게 될 우려가 많았으며, 불활성가스를 에지부에 흘릴경우에는 웨이퍼 중앙 부분으로 증착이 집중되어 박막의 균일성을 유지하기가 곤란한 문제점이 있었다.However, in the related art, when using shadow rings or clamps, foreign matters may be generated on the wafer, and when inert gas flows to the edge portion, deposition is concentrated on the center portion of the wafer to maintain uniformity of the thin film. There was a difficult problem.
요컨대, 웨이퍼 에지(≒3mm)는 공정 제어가 어려운 위치로써 종래의 기술장치로서는 웨이퍼(5) 표면에 증착되는 박막의 균일성을 유지하기가 곤란하였다.In other words, the wafer edge (≒ 3 mm) is a position where process control is difficult, and it is difficult to maintain the uniformity of the thin film deposited on the wafer 5 surface in the prior art apparatus.
본 발명은 상기한 제반 문제점을 해결하기 위한 것으로서, 화학기상증착용반응챔버의 히터블록 구조 개선을 통해, 웨이퍼 에지 부분에서의 박막 증착을 억제하므로써 웨이퍼 표면에 증착되는 박막의 균일성을 도모할 수 있도록 하는데 그 목적이 있다.The present invention is to solve the above-mentioned problems, by improving the heater block structure of the chemical vapor deposition reaction chamber, it is possible to achieve uniformity of the thin film deposited on the wafer surface by suppressing the thin film deposition on the wafer edge portion. The purpose is to make it.
도 1은 종래 기술장치의 구성을 나타낸 종단면도1 is a longitudinal cross-sectional view showing the configuration of a prior art device;
도 2는 본 발명에 따른 기술장치의 구성을 나타낸 종단면도Figure 2 is a longitudinal sectional view showing the configuration of the technical apparatus according to the present invention
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
1:반응챔버 2:샤워헤드1: Reaction chamber 2: Shower head
3:히터블록 4,4a:히터3: Heater block 4, 4a: Heater
5:웨이퍼 6:약액5: Wafer 6: Chemical
7:약액공급구 8:전원선7: Chemical supply port 8: Power line
9:노즐공 10:냉매덕트9: nozzle ball 10: refrigerant duct
11:요입홈 12:단열재11: Indented groove 12: Insulation
상기한 목적을 달성하기 위해, 본 발명은 웨이퍼의 에지 부분만을 국부적으로 냉각시킬 수 있도록, 히터블록의 직경을 웨이퍼 직경을 벗어난 외측 영역으로 확장하는 한편, 웨이퍼 외측으로 확장된 영역 내에 웨이퍼 가장자리를 냉각시키기 위한 냉각수단인 냉매 유동덕트 및 가열수단인 히터가 추가적으로 구비되도록 하므로써, 웨이퍼 에지 부분의 박막 증착을 억제하여 웨이퍼 표면에 증착되는 박막이 전체적으로 균일한 두께를 가질 수 있도록 한 반도체소자 제조를 위한 박막 증착 공정용 히터블록이 제공된다.In order to achieve the above object, the present invention extends the diameter of the heater block to an outer region outside the wafer diameter while cooling only the wafer edge in the region extended outside the wafer so that only the edge portion of the wafer can be locally cooled. Thin film for manufacturing a semiconductor device by suppressing the deposition of the thin film on the wafer edge portion so that the thin film deposited on the wafer surface can have a uniform thickness as a whole by providing a refrigerant flow duct and a cooling means heater for additionally A heater block for a deposition process is provided.
이하, 본 발명의 일실시예를 첨부도면 도 2를 참조하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명에 따른 기술장치의 구성을 나타낸 종단면도로서, 본 발명은 화학기상증착용 반응챔버(1) 내에 설치되는 히터블록(3)에 있어서, 히터블록(3)의 직경을 웨이퍼(5) 직경을 벗어난 외측 영역으로 확장하는 한편, 웨이퍼(5) 외측으로 확장된 영역 내에 웨이퍼(5) 가장자리를 냉각시키기 위한 냉각수단인 냉매덕트(10) 및 히터블록(3) 가장자리를 가열하기 위한 히터(4a)가 추가적으로 구비되도록 한 것이다.FIG. 2 is a longitudinal sectional view showing the construction of a technical apparatus according to the present invention. In the present invention, in the heater block 3 installed in the reaction chamber 1 for chemical vapor deposition, the diameter of the heater block 3 is measured using a wafer ( 5) for cooling the edges of the refrigerant duct 10 and the heater block 3, which are cooling means for cooling the edge of the wafer 5 in the area extending out of the wafer 5 and extending outside the diameter of the wafer 5; The heater 4a is to be additionally provided.
이 때, 상기 냉매덕트(10)는 웨이퍼(5) 에지 영역을 바로 벗어난 위치의 히터블록(3) 내부에 형성되며, 상기 냉매덕트(10) 외측에는 웨이퍼(5)에 비해 온도를 높여 웨이퍼 에지부의 약액 농도를 낮추므로써, 결국 웨이퍼 에지부에 대한 박막 증착력을 줄이기 위한 히터(4a)가 추가적으로 구비된다.At this time, the refrigerant duct 10 is formed inside the heater block 3 at a position immediately away from the wafer 5 edge region, and the temperature of the refrigerant duct 10 outside the wafer duct 10 is increased to be higher than that of the wafer 5. By lowering the negative chemical concentration, a heater 4a is additionally provided to reduce the thin film deposition force on the wafer edge.
한편, 상기 히터블록(3)의 냉매덕트(10) 양측에는 냉매덕트(10)를 흐르는 냉각수 등의 냉매에 의해 히터블록(3)의 다른 부위의 온도가 저하되는 현상을 방지하기 위해 단열재(12)가 설치된다On the other hand, both sides of the refrigerant duct 10 of the heater block 3 to prevent the phenomenon that the temperature of other parts of the heater block 3 is lowered by the refrigerant such as the cooling water flowing through the refrigerant duct 10, the heat insulating material 12 ) Is installed
상기에서 냉매덕트(10) 내부로는 냉각기(Chiller)(도시는 생략함)를 통과하여 공정에 알맞은 온도로 조절된 냉각수나 프레온 가스등의 냉매를 유동시키게 된다.In the above refrigerant duct 10 is passed through a chiller (not shown) to flow a refrigerant such as cooling water or freon gas adjusted to a temperature suitable for the process.
또한, 상기 냉매덕트(10)가 위치하는 영역의 히터블록(3) 상면에는 웨이퍼(5) 에지부 외측으로의 반응가스 유도 및 잔류물 배출을 위한 요입홈(11)이 형성된다.In addition, a recess 11 is formed in the upper surface of the heater block 3 in the region where the refrigerant duct 10 is located to guide the reaction gas to the outside of the edge of the wafer 5 and discharge the residue.
이와 같이 구성된 본 발명의 작용은 다음과 같다.The operation of the present invention configured as described above is as follows.
반응챔버(1) 내에 들어와 히터블록(3) 상면에 웨이퍼(5)가 안착되고 난 후, 소정의 압력조건에서 히터블록(3)에 내장된 히터(4)(4a)에 전원이 인가되고, 이에 따라 히터(4)로부터 발생하는 열에 의해 웨이퍼(5)가 가열된다.After the wafer 5 is placed in the reaction chamber 1 and the heater 5 is seated on the upper surface of the heater block 3, power is applied to the heaters 4 and 4a embedded in the heater block 3 under a predetermined pressure condition. As a result, the wafer 5 is heated by the heat generated from the heater 4.
그 후, 웨이퍼(5)가 가열되어 소정의 온도에 도달하면, 공급라인을 통해 공급되는 약액(6)(예: WF6가스)이 약액공급구(7)를 통해 샤워헤드(2)측으로 유입된 후, 샤워헤드(2)의 노즐공(9)을 통해 분사되어 웨이퍼(5) 표면에 도포된다.Thereafter, when the wafer 5 is heated to reach a predetermined temperature, the chemical liquid 6 (eg, WF 6 gas) supplied through the supply line flows into the shower head 2 through the chemical liquid supply port 7. Then, it is sprayed through the nozzle hole 9 of the shower head 2 and applied to the surface of the wafer 5.
한편, 상기한 바와 같이 웨이퍼(5) 표면에 도포된 약액(6)은 열분해되는데, 이에 따라 휘발성가스(예; F, H, Cl)는 휘발되고, 잔류물(W, Si, Mo, Cu)은 웨이퍼(5) 표면에 증착되어 박막을 형성하게 된다.On the other hand, as described above, the chemical liquid 6 applied to the surface of the wafer 5 is thermally decomposed, whereby volatile gases (eg, F, H, Cl) are volatilized, and residues (W, Si, Mo, Cu) are volatilized. Silver is deposited on the wafer 5 surface to form a thin film.
이 때, 본 발명에서는 웨이퍼 에지를 곧바로 벗어난 영역의 히터블록(3) 내부에 형서된 냉매덕트(10)를 통해 냉각수 또는 프레온 가스등의 차가운 유체가 흐르고 있으므로 인해, 웨이퍼(5) 에지 부분의 온도만을 선택적을 낮출 수 있게 되며, 이에 따라 결국 웨이퍼(5) 에지부의 약액농도를 낮출 수 있게 된다.At this time, in the present invention, because a cool fluid such as cooling water or freon gas flows through the refrigerant duct 10 formed inside the heater block 3 in the region immediately beyond the wafer edge, only the temperature of the edge portion of the wafer 5 is changed. It is possible to lower the selectivity, thereby reducing the chemical liquid concentration at the edge of the wafer 5.
상기에서 냉각액은 유입구를 통해 냉매덕트(10)로 유입된 후에 유출구를 통해 빠져나가게 된다.The coolant flows out through the outlet after the coolant flows into the refrigerant duct 10 through the inlet.
한편, 상기 기존의 히터블록(3)과는 달리 냉매덕트(10) 외측에 추가적으로 설치된 히터(4a)에 의해서 히터블록(3) 에지부의 온도가 웨이퍼(5)에 비해 높아지게 되므로 인해, 웨이퍼(5) 에지부 외측으로 분사되는 약액(6)은 저압측인 히터블록(3)의 에지부 쪽으로 유도된다.On the other hand, unlike the conventional heater block 3, the temperature of the edge portion of the heater block 3 is higher than the wafer 5 by the heater 4a additionally installed outside the refrigerant duct 10, the wafer 5 The chemical liquid 6 injected outside the edge portion is led toward the edge portion of the heater block 3 on the low pressure side.
이에 따라, 웨이퍼(5) 에지부의 약액 농도가 한층 더 낮아지므로써 웨이퍼(5) 에지부에 대한 박막 증착력 또한 더욱 줄어들게 된다.Accordingly, the concentration of the chemical liquid on the edge of the wafer 5 is further lowered, so that the thin film deposition force on the edge of the wafer 5 is further reduced.
이와 더불어, 본 발명에서는 상기 히터블록(3)의 냉매덕트(10) 양측에 단열재(12)가 설치되어 있어, 상기 단열재(12)의 단열 작용으로 인해 냉매의 웨이퍼(5) 에지부 냉각작용에도 불구하고 히터블록(3)의 다른 부위의 온도가 저하되는 현상을 방지할 수 있게 된다.In addition, in the present invention, the heat insulating material 12 is provided on both sides of the refrigerant duct 10 of the heater block 3, and the heat insulating action of the heat insulating material 12 prevents cooling of the wafer 5 edges of the refrigerant. Nevertheless, it is possible to prevent the phenomenon that the temperature of other parts of the heater block 3 is lowered.
한편, 본 발명에서는 화학기상증착 진행시, 상기 냉매덕트(10)가 위치하는영역의 히터블록(3) 상면에는 요입홈(11)이 형성되어 있어, 반응가스가 상기 웨이퍼(5) 에지부로 유입되지 않고 요입홈(11) 쪽으로 유도되므로 인해 웨이퍼(5) 에지부의 약액 농도를 낮출 수 있게 된다.Meanwhile, in the present invention, when the chemical vapor deposition proceeds, recessed grooves 11 are formed on the upper surface of the heater block 3 in the region where the refrigerant duct 10 is located, and reaction gas flows into the edge of the wafer 5. Since it is guided toward the recessed groove 11, the chemical liquid concentration of the edge portion of the wafer 5 can be lowered.
이 때, 상기 히터블록(3) 상면의 요입홈(11)은 약액 도포시, 잔류물 배출을 위한 기능도 함께 수행하게 된다.At this time, the recess groove 11 of the upper surface of the heater block (3) is also performed with the function for discharging the residue when applying the chemical.
따라서, 본 발명은 종래와는 달리, 웨이퍼(5) 에지 부분을 가리는 새도우 링 또는 클램프를 사용하거나, 에지부에 불활성 가스를 흘리지 않더라도 웨이퍼(5) 에지부에 박막이 형성되는 현상을 방지하므로써, 박막의 균일한 증착이 가능하도록 작용하게 된다.Therefore, unlike the related art, by using a shadow ring or a clamp covering the edge of the wafer 5 or preventing a thin film from being formed at the edge of the wafer 5 even without flowing an inert gas at the edge, It serves to enable uniform deposition of the thin film.
이상에서와 같이, 본 발명은 화학기상증착용 반응챔버의 히터블록의 구조 개선을 통해, 웨이퍼 에지 부분에서의 박막 증착을 억제하므로써 웨이퍼 표면에 증착되는 박막의 균일성을 도모할 수 있는 효과를 가져오게 되며, 나아가 반도체소자 제조 공정의 수율을 향상시킬 수 있게 된다.As described above, the present invention has the effect of improving the uniformity of the thin film deposited on the wafer surface by suppressing the thin film deposition on the wafer edge portion through the structure of the heater block of the chemical vapor deposition reaction chamber. In addition, it is possible to improve the yield of the semiconductor device manufacturing process.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990038670A KR100304971B1 (en) | 1999-09-10 | 1999-09-10 | heater block for film deposition in fabrication of semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990038670A KR100304971B1 (en) | 1999-09-10 | 1999-09-10 | heater block for film deposition in fabrication of semiconductor |
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| KR20010027089A KR20010027089A (en) | 2001-04-06 |
| KR100304971B1 true KR100304971B1 (en) | 2001-11-07 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104871292A (en) * | 2012-12-18 | 2015-08-26 | 株式会社Eugene科技 | Substrate treatment apparatus, and method for controlling temperature of heater |
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| US10192760B2 (en) * | 2010-07-29 | 2019-01-29 | Eugene Technology Co., Ltd. | Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit |
| KR101452829B1 (en) * | 2014-02-17 | 2014-10-22 | 주식회사 유진테크 | Method for adjusting temperature of heater |
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1999
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104871292A (en) * | 2012-12-18 | 2015-08-26 | 株式会社Eugene科技 | Substrate treatment apparatus, and method for controlling temperature of heater |
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