WO2003088301A1 - Ecran d'affichage d'images et procede de fabrication - Google Patents

Ecran d'affichage d'images et procede de fabrication Download PDF

Info

Publication number
WO2003088301A1
WO2003088301A1 PCT/JP2003/004110 JP0304110W WO03088301A1 WO 2003088301 A1 WO2003088301 A1 WO 2003088301A1 JP 0304110 W JP0304110 W JP 0304110W WO 03088301 A1 WO03088301 A1 WO 03088301A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
image display
insulating layer
metal substrate
display device
Prior art date
Application number
PCT/JP2003/004110
Other languages
English (en)
Japanese (ja)
Inventor
Shigeo Takenaka
Masaru Nikaido
Satoshi Ishikawa
Satoko Oyaizu
Original Assignee
Kabushiki Kaisha Toshiba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Toshiba filed Critical Kabushiki Kaisha Toshiba
Priority to KR1020047016394A priority Critical patent/KR100704801B1/ko
Priority to EP03712990A priority patent/EP1496539A1/fr
Publication of WO2003088301A1 publication Critical patent/WO2003088301A1/fr
Priority to US10/965,262 priority patent/US7071610B2/en
Priority to US11/405,585 priority patent/US20060211324A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/18—Assembling together the component parts of electrode systems
    • H01J9/185—Assembling together the component parts of electrode systems of flat panel display devices, e.g. by using spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
    • H01J9/242—Spacers between faceplate and backplate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8605—Front or back plates
    • H01J2329/8615—Front or back plates characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H01J2329/863—Spacing members characterised by the form or structure

Definitions

  • Image display device and method of manufacturing image display device are Image display device and method of manufacturing image display device
  • the present invention relates to a flat-panel image display device and a method of manufacturing the image display device, and in particular, includes: a substrate disposed to face, and a plurality of electron sources disposed on an inner surface of one of the substrates.
  • the present invention relates to a flat type image display device and a method for manufacturing the image display device.
  • Such image display devices include a liquid crystal display (hereinafter, referred to as an LCD) that controls the intensity of light using the orientation of the liquid crystal, and a plasma that emits a phosphor using ultraviolet light of plasma discharge.
  • LCD liquid crystal display
  • PDP display panel
  • a display device using the luminescence phenomenon of the phosphor and a phosphor that emits light by the electron beam of a field emission electron-emitting device.
  • FED Field emission display
  • SED SED
  • the SED has a first substrate and a second substrate that are opposed to each other with a predetermined gap.
  • these substrates are formed of a glass plate having a thickness of about 2.8 mm, and the peripheral edges thereof are joined to each other directly or via a rectangular frame-like side wall to form a vacuum envelope.
  • a phosphor layer functioning as an image display surface is formed on the inner surface of the first substrate, and a plurality of electron-emitting devices as an electron source for exciting the phosphor layer to emit light are formed on the inner surface of the second substrate. Is provided.
  • a plurality of spacers are provided as support members between the substrates.
  • an anode voltage is applied to the phosphor layer, and the electron beam emitted from the electron-emitting device is accelerated by the anode voltage to collide with the phosphor layer.
  • the phosphor emits light to display an image.
  • the size of the electron-emitting device is on the order of micrometer, and the distance between the first substrate and the second substrate can be set on the order of millimeter. For this reason, SEDs can achieve higher resolution, lighter weight, and thinner profile than CRTs used as displays for today's televisions and computers. Become.
  • the present invention has been made in view of the above points, and its purpose is to reduce the manufacturing cost in preparation for further higher definition in the future, in addition to being thinner and lighter. And a method of manufacturing the image display device.
  • a flat image display device includes: a first substrate provided with an image display surface; and a first substrate provided to face the first substrate with a gap.
  • a method of manufacturing an image display device comprising: a first substrate provided with an image display surface; and a first substrate provided to face the first substrate with a gap therebetween.
  • a method for manufacturing an image display device comprising: a second substrate provided with an electron source; and an envelope having a vacuum inside.
  • a metal substrate having a desired thickness is prepared, an insulating layer is formed on at least one surface of the metal substrate, and wiring for driving an electron source and an electron source is formed on the insulating layer.
  • the second substrate is constituted.
  • the second substrate is composed of a composite material in which a metal substrate is coated with an insulating material. Therefore, the mechanical strength of the second substrate is greatly improved, and the second substrate can be formed thin. This makes it possible to reduce the thickness and weight of the entire image display device. At the same time, processing of the second substrate, formation of wiring, and the like are easier than in the case of a glass plate, so that manufacturing costs can be reduced, and handling of the substrate during the manufacturing process becomes easier.
  • FIG. 1 is a perspective view showing an SED according to an embodiment of the present invention.
  • FIG. 2 is a perspective view of the above SED taken along the line II-II in FIG.
  • FIG. 3 is an enlarged cross-sectional view of the above SED.
  • FIG. 4 is a plan view showing an arrangement of wires and electron-emitting devices provided on the second substrate of the SED.
  • 5A to 5C are cross-sectional views schematically showing manufacturing steps of the second substrate in the above SED.
  • FIG. 6 is a sectional view showing a second substrate according to another embodiment.
  • FIG. 7 is a sectional view showing a second substrate according to still another embodiment.
  • BEST MODE FOR CARRYING OUT THE INVENTION an embodiment in which the present invention is applied to an SED, which is a type of FED, as a planar image display device will be described in detail with reference to the drawings.
  • the SED includes a first substrate 10 and a second substrate 12 each having a rectangular shape, and these substrates have a thickness of about 1.0 to 2.0 mm. They are arranged facing each other with a gap.
  • the first substrate 10 is formed of a glass plate as a transparent insulating substrate.
  • the second substrate 12 is formed of, for example, a composite material in which a metal substrate having a thickness of about 0.1 to 0.5 mm is covered with an insulating material. Are also formed with slightly larger dimensions.
  • the first substrate 10 and the second substrate 12 are joined to each other via a rectangular frame-shaped side wall 14 made of glass, and the outside is a flat rectangular vacuum with the inside maintained at a vacuum. It constitutes enclosure 15.
  • the side wall 14 may be formed of a metal covered with an insulating material.
  • a phosphor screen 16 is formed as an image display surface.
  • This phosphor screen 16 is configured by arranging phosphor layers R, G, B, and a light-shielding layer 11 that emit red, blue, and green light by electron collision.
  • the phosphor layers R, G, and B are formed in a strip shape or a dot shape.
  • a metal papa made of aluminum or the like, a hook 17, and a getter film (not shown) are formed in this order.
  • the side wall 14 functioning as a joining member is made of, for example, a sealing material 20 such as a low-melting-point glass or a low-melting-point metal.
  • the first substrate and the second substrate are bonded together.
  • the SED includes a spacer assembly 22 disposed between the first substrate 10 and the second substrate 12.
  • the spacer assembly 22 includes a plate-shaped grid 24 and a plurality of pillar-shaped spacers integrally provided on both sides of the grid. It is configured.
  • the grid 24 has a first surface 24a facing the inner surface of the first substrate 10 and a second surface 24b facing the inner surface of the second substrate 12; It is arranged parallel to these substrates.
  • the grid 24 is made of, for example, iron or an alloy mainly containing iron and containing at least one of nickel and chrome.
  • a large number of electron beam passage holes 26 and a plurality of spacer openings 28 are formed in the grid 24 by etching or the like.
  • the electron beam passage holes 26 functioning as apertures in the present invention are arranged to face the electron-emitting devices 18 respectively.
  • the spacer holes 28 are located between the electron beam passage holes and are arranged at a predetermined pitch.
  • a first spacer 30 a is provided standing upright so as to overlap with each spacer opening 28.
  • An indium layer is applied to the extension end of each first spacer 30a to form a height relaxation layer 31 for alleviating variations in spacer height.
  • the extending end of each first spacer 30a is formed of a light-shielding layer 11 of the height relaxation layer 31, a getter film, a metal back 1 and a phosphor screen 16. And is in contact with the inner surface of the first substrate 10 via
  • the height-relaxation layer 31 does not affect the trajectory of the electron beam at all, and is limited to metal as long as it has an appropriate hardness that has the effect of reducing the height variation of the spacer. is not. Of course, if the height variation is suppressed by the spacer itself, the height relaxation layer 31 is unnecessary.
  • a second spacer 30 b is physically erected so as to overlap with each spacer opening 28, and the extension end thereof is It is in contact with the inner surface of the second substrate 12.
  • Each spacer opening 28, the first and second spacers 30a, 30b are aligned with each other, and the first and second spacers are opened by this spacer. They are integrally connected to each other through a hole 28.
  • the first and second spacers 30a, 30b are formed integrally with the grid 24 with the grid 24 sandwiched from both sides.
  • Each of the first and second spacers 30a and 30b is formed in a tapered shape having a smaller diameter from the grid 24 side toward the extending end.
  • the spacer assembly 22 having the above configuration is disposed between the first substrate 10 and the second substrate 12.
  • the first and second spacers 30a and 30b come into contact with the inner surfaces of the first and second substrates 10 and 12, so that the first and second spacers 30a and 30b act on these substrates. It supports atmospheric pressure loads and maintains the spacing between substrates at a specified value.
  • a large number of electron beams each emitting an electron beam are used as an electron source for exciting the phosphor layer of the phosphor screen 16.
  • the surface conduction type electron-emitting device 18 is provided.
  • Each electron-emitting device 18 is arranged in a plurality of columns and a plurality of rows corresponding to each pixel.
  • Each electron-emitting device 18 includes an electron-emitting portion (not shown), a pair of device electrodes for applying a voltage to the electron-emitting portion, and the like.
  • a number of internal wirings for applying a voltage to the electron-emitting devices 18 are provided in a matrix. That is, as shown in FIGS. 3 and 4, on the inner surface of the second substrate 12, a large number of scanning wirings (X wirings) 3 extending parallel to each other along the longitudinal direction X of the second substrate 12. 4 and a large number of signal wirings (Y wirings) 36 extending along a direction Y orthogonal to the scanning wirings.
  • the scanning wirings 34 are provided with 480 lines
  • the signal wirings 36 are provided with 640 ⁇ 3 lines
  • the wiring pitches are 900 m and 300 ⁇ m, respectively.
  • each scanning wiring 34 is connected to a scanning line driving circuit 38, and one end of each signal wiring 36 is connected to a signal line driving circuit 40.
  • the scanning line driving circuit 38 supplies a driving voltage for driving and controlling the electron-emitting device 18 to the scanning wiring 34, and the signal line driving circuit 40 supplies a display signal voltage to the signal wiring 36. .
  • an electron emitting element 18 is connected to each intersection of the scanning wiring 34 and the signal wiring 36 to form a pixel.
  • the number of the electron-emitting devices 18 is 6400 ⁇ 3 along each scanning line 3 4, and 4800 ⁇ 3 along each signal line 36. are provided.
  • the SED includes a grid 24 and a voltage supply unit 51 that applies an anode voltage to the metal clock 17 of the first substrate 10.
  • This voltage supply 51 is connected to the grid 24 and the metal back 17, for example, 12 kV for the grid 24 and 10 kV for the metal back 17. Apply the voltage of.
  • an anode voltage is applied to the phosphor screen 16 and the metal back 17, and the electron beam emitted from the electron emission element 18 is anoded. It is accelerated by the voltage and collides with the phosphor screen 16. As a result, the phosphor layer of the phosphor screen 16 is excited to emit light, and an image is displayed.
  • the second substrate 12 of the SED is formed of a composite material obtained by coating a metal substrate with an insulating material.
  • the second substrate 12 is, for example, a metal substrate 50 having a thickness of 0.1 to 0.5 mm, and at least the metal substrate is opposed to the first substrate.
  • An insulating layer 52 is formed on the surface, that is, the installation surface 50 a on which the electron-emitting device 18 is provided.
  • the metal substrate 50 is made of the same material as the grid 24, for example, iron or an alloy mainly containing iron and containing at least one of nickel and chrome.
  • the insulating layer 52 is formed by any one of a liquid phase deposition method, an open-to-atmosphere type chemical vapor deposition method, a vapor deposition method, and a spray coating method.
  • a large number of grooves 54 extending parallel to each other along the ⁇ direction are formed on the installation surface 50a of the metal substrate 50.
  • the groove is formed so as to overlap.
  • the electron-emitting device 18, the scanning wiring 34, and the signal wiring 36 are provided on the insulating layer 52.
  • the signal wirings 36 are formed on the insulating layer 52 while being positioned in the grooves 54.
  • the metal substrate 50 of the second substrate 12 is connected to a ground (not shown) and is electrically grounded.
  • the second substrate 12 having the above configuration is manufactured by the following steps. First, as shown in FIG. 5A, Fe—50% Ni (including unavoidable impurities) is rolled to a thickness of 0.25 mm to form a metal plate having predetermined dimensions. Next, a groove 54 having a depth of 0.1 mm, a width of 0.15 mm and a pitch of 0.615 mm was formed on one surface (installation surface 50a) of the metal plate by a photo-etching method. Form. Thereafter, the metal plate is cut to a predetermined size while performing leveling, and a metal substrate 50 is obtained.
  • Fe—50% Ni including unavoidable impurities
  • the metal substrate 50 is oxidized in an oxidizing atmosphere, and Fe 3 O 4 and Fe 2 N i O 4 are formed on the S surface 50 a of the metal substrate. Is formed. Next, using an ultrafine particle type 2 fluid nozzle, the oxide film on the metal substrate 50 was formed.
  • the insulating layer 52 is formed by applying a liquid containing Li-based borosilicate glass, drying and firing. Further, the metal substrate 50 is dipped in a silicon alkoxide solution, pulled up, and fired, and a SiO 2 film is formed on the insulating layer 52 made of L L-based borosilicate glass. Formed to form part of an insulating layer.
  • the SiO 2 film and the insulating layer 5 are formed.
  • Each groove 54 is filled with a conductive paste containing Ag through The signal wiring 36 was obtained by drying and firing. After that, the remaining wiring and the electron-emitting device 18 were formed on the insulating layer 52 including the SiO 2 film by the existing process, and the second substrate 12 was obtained.
  • the glass plate 12 by forming the second substrate 12 by the metal substrate 50 and the insulating layer 52 coated on the surface thereof, the glass plate
  • the mechanical strength of the second substrate can be greatly increased as compared with the case of using.
  • the thickness of the second substrate 12 can be reduced to approximately 1Z10 or less as compared with the case where a glass plate is used, and the thickness and weight of the entire SED can be reduced. Can be.
  • the second substrate 12 is easier to process and form wiring as compared with a glass plate, and can reduce the manufacturing cost. It is hard to break and easy to handle during the manufacturing process.
  • the second substrate 12 By forming grooves 54 on the installation surface 50a of the second substrate 12 and providing the signal wiring 36 via the insulating layer 52 in these grooves, the second substrate 12 It is possible to further reduce the thickness. Note that the signal wiring 36 can be formed on the insulating layer 52 without providing the groove 54.
  • the insulating layer 52 is provided only on the mounting surface 50 a side of the metal substrate 50. However, as shown in FIG. 6, the entire outer surface of the metal substrate 50 is It may be configured to cover with 2.
  • the second substrate 12 can be manufactured by the following steps. First, F e — 50% Ni (including unavoidable impurities) 04110
  • the metal substrate 50 is subjected to a chemical conversion treatment to form a blackened film having an O H group on the surface of the metal substrate.
  • the metal substrate 50 is immersed in 25 ° C. hydrofluoric acid in which silicon dioxide has become supersaturated to form an insulating layer 52 made of SiO 2 on the surface of the metal substrate. I do. Furthermore, 4 0 0 ° and treated at C or more in the atmosphere would of S i 0 2 or we become rows dense Kasho physical insulation layer 5 2. This densification process can be omitted. After that, wiring and electron-emitting devices are formed on the insulating layer 52 by an existing process to obtain a second substrate 12.
  • the second substrate 12 may have a configuration having a back surface wiring formed on the back surface.
  • the second substrate 12 has a metal substrate 50 and an insulating layer 52 covering the installation surface 50a and the back surface 50b of the metal substrate.
  • a large number of scanning wirings 34, signal wirings 36, and electron-emitting devices 18 are formed on the installation surface 50a, similarly to the above-described embodiment, and a large number are formed on the back surface 50b.
  • the back wiring 56 of the book is formed. In the present embodiment, the back wiring 56 extends in a direction parallel to the scanning wiring 34.
  • a large number of through-holes 60 are formed at one end of the second substrate 12 with predetermined pitches, and each through-hole is filled with a conductive material to form a conductive portion 62.
  • Each back wiring 56 is connected via the corresponding conductive part 62. And is electrically connected to the scanning wiring 34.
  • the second substrate 12 having such a configuration can be manufactured by the following steps. First, aluminum-killed steel is rolled to a thickness of 0.12 mm, and a 0.1 mm-dia. Through hole 60 is formed in the rolled metal plate with a pitch of 0.615 mm. It is formed by the ching method. Thereafter, the metal plate is cut to a predetermined size while performing leveling, and a metal substrate 50 is obtained.
  • the metal substrate 50 is oxidized in an oxidizing atmosphere, and at least one of Fe 3 O 4 and Fe 2 Ni O 4 is placed on the installation surface 50 a and the back surface 50 b of the metal substrate.
  • An oxide film is formed.
  • a liquid containing a silica-based borosilicate glass is applied onto the oxide film of the metal substrate 50 using a fine particle type two-fluid nozzle, and the metal substrate is dried and fired.
  • An insulating layer 52 is formed on the 50 installation surface 50 a, the back surface 50 b, and the inner surface of each through hole 60.
  • the metal plate 50 is debbed in a silicon alkoxide solution, pulled up, and baked, and the silicon plate is placed on the insulating layer 52 made of i-based borosilicate glass. An O 2 film is formed. Thereafter, a conductive paste containing Ag as a conductive material is filled in each through-hole 60, and the conductive portion 62 is formed by drying and firing. Subsequently, on the installation surface 50 a side, the scanning wiring 34 and the signal wiring 3 are formed on the insulating layer 52 including the SiO 2 film by the existing process.
  • One end of 34 is formed so as to overlap one end of the through hole 60, and is electrically connected to the conductive portion 62.
  • each back wiring 56 is formed so as to overlap the through hole 60, and is electrically connected to the corresponding scanning wiring 34 via the through hole and the conductive portion 62.
  • the back wiring 56 has a lower wiring resistance than the internal wiring such as the scanning wiring and the signal wiring.
  • the back wiring 56 is not limited to the scanning wiring and may be connected to the signal wiring.
  • the present invention is not limited to the above-described embodiment, and can be variously modified within the scope of the present invention.
  • the present invention can be applied not only to an image display device having a grid but also to an image display device having no grid.
  • dimensions, materials, and the like of each constituent element can be appropriately selected as needed.
  • the electron source is not limited to the surface conduction type electron-emitting device, and various types such as a field emission type and a carbon nanotube can be selected.
  • the present invention is not limited to the above-described SED, but can be applied to other flat image display devices such as FED and PDP.
  • a method of manufacturing a flat type image display device and an image display device which can be reduced in thickness and weight and can reduce the manufacturing cost. be able to.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)

Abstract

Selon l'invention, un boîtier à vide (15) contient un premier substrat (10) présentant un plan d'affichage d'images (16), et un deuxième substrat (12) disposé à l'opposé du premier substrat avec un espace, pourvu d'une pluralité de sources d'électrons (18). Le deuxième substrat est constitué d'un substrat métallique (50) sur lequel le plan présentant les sources d'électrons est revêtu d'une couche d'isolation (52).
PCT/JP2003/004110 2002-04-17 2003-03-31 Ecran d'affichage d'images et procede de fabrication WO2003088301A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020047016394A KR100704801B1 (ko) 2002-04-17 2003-03-31 화상 표시 장치 및 화상 표시 장치의 제조 방법
EP03712990A EP1496539A1 (fr) 2002-04-17 2003-03-31 Ecran d'affichage d'images et procede de fabrication
US10/965,262 US7071610B2 (en) 2002-04-17 2004-10-15 Image display device and manufacturing method for image display device
US11/405,585 US20060211324A1 (en) 2002-04-17 2006-04-18 Image display device and manufacturing method for image display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002114981A JP2003308798A (ja) 2002-04-17 2002-04-17 画像表示装置および画像表示装置の製造方法
JP2002-114981 2002-04-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/965,262 Continuation US7071610B2 (en) 2002-04-17 2004-10-15 Image display device and manufacturing method for image display device

Publications (1)

Publication Number Publication Date
WO2003088301A1 true WO2003088301A1 (fr) 2003-10-23

Family

ID=29243406

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/004110 WO2003088301A1 (fr) 2002-04-17 2003-03-31 Ecran d'affichage d'images et procede de fabrication

Country Status (7)

Country Link
US (2) US7071610B2 (fr)
EP (1) EP1496539A1 (fr)
JP (1) JP2003308798A (fr)
KR (1) KR100704801B1 (fr)
CN (1) CN1647233A (fr)
TW (1) TWI287817B (fr)
WO (1) WO2003088301A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123066A (ja) * 2003-10-17 2005-05-12 Toshiba Corp 画像表示装置
JP2005149960A (ja) 2003-11-17 2005-06-09 Toshiba Corp 画像表示装置
KR100922744B1 (ko) * 2003-11-25 2009-10-22 삼성에스디아이 주식회사 평판 표시장치의 스페이서 지지 구조체 및 스페이서 지지방법
BRPI0402052A (pt) * 2004-05-14 2006-01-03 Vitor Renaux Hering Disposição construtiva em displays de tela plana
JP4934996B2 (ja) * 2005-06-08 2012-05-23 ソニー株式会社 平面型表示装置の製造方法
KR100844021B1 (ko) * 2006-05-12 2008-07-04 주식회사 센플러스 평판표시장치용 기판 및 제조방법 그리고 상기 기판을이용한 평판표시장치 및 제조방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0436942A (ja) * 1990-05-31 1992-02-06 Noritake Co Ltd 屈曲型ホーロー基板蛍光表示管およびその製造方法
JPH09180655A (ja) * 1995-12-22 1997-07-11 Canon Inc 真空外囲器、それを組み込んだ画像形成装置、及びこれらの製造方法
JPH10283954A (ja) * 1997-04-07 1998-10-23 Noritake Co Ltd 画像表示素子およびその製造方法
JP2000251680A (ja) * 1999-02-25 2000-09-14 Canon Inc 電子源基板、画像表示装置及び電子源基板の製造方法
WO2001008193A1 (fr) * 1999-07-26 2001-02-01 Advanced Vision Technologies, Inc. Dispositif a effet de champ a vide et procede de fabrication
JP2001035425A (ja) * 1999-07-23 2001-02-09 Hitachi Ltd 表示装置
EP1189255A1 (fr) * 2000-03-23 2002-03-20 Kabushiki Kaisha Toshiba Ensemble espaceur pour afficheur a surface plane, procede de fabrication de cet ensemble espaceur, procede de fabrication d'afficheur a surface plane, afficheur a surface plane et moule utilisable dans le cadre de la fabrication de l'ensemble espaceur
JP2002198001A (ja) * 2000-12-25 2002-07-12 Matsushita Electric Works Ltd 画像表示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5412285A (en) * 1990-12-06 1995-05-02 Seiko Epson Corporation Linear amplifier incorporating a field emission device having specific gap distances between gate and cathode
KR100295111B1 (ko) * 1998-11-26 2001-07-12 구자홍 인쇄회로기판일체형플라즈마표시장치
CN1252778C (zh) 1999-03-31 2006-04-19 东芝株式会社 平板型图像显示装置的制造方法及平板型图像显示装置
JP3831156B2 (ja) 1999-09-09 2006-10-11 株式会社日立製作所 画像表示装置および画像表示装置の駆動方法
US6848961B2 (en) 2000-03-16 2005-02-01 Canon Kabushiki Kaisha Method and apparatus for manufacturing image displaying apparatus
JP3730476B2 (ja) * 2000-03-31 2006-01-05 株式会社東芝 電界放出型冷陰極及びその製造方法
KR20020009066A (ko) * 2000-07-24 2002-02-01 구자홍 카본나노튜브 전계방출 표시 소자 및 그 제조방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0436942A (ja) * 1990-05-31 1992-02-06 Noritake Co Ltd 屈曲型ホーロー基板蛍光表示管およびその製造方法
JPH09180655A (ja) * 1995-12-22 1997-07-11 Canon Inc 真空外囲器、それを組み込んだ画像形成装置、及びこれらの製造方法
JPH10283954A (ja) * 1997-04-07 1998-10-23 Noritake Co Ltd 画像表示素子およびその製造方法
JP2000251680A (ja) * 1999-02-25 2000-09-14 Canon Inc 電子源基板、画像表示装置及び電子源基板の製造方法
JP2001035425A (ja) * 1999-07-23 2001-02-09 Hitachi Ltd 表示装置
WO2001008193A1 (fr) * 1999-07-26 2001-02-01 Advanced Vision Technologies, Inc. Dispositif a effet de champ a vide et procede de fabrication
EP1189255A1 (fr) * 2000-03-23 2002-03-20 Kabushiki Kaisha Toshiba Ensemble espaceur pour afficheur a surface plane, procede de fabrication de cet ensemble espaceur, procede de fabrication d'afficheur a surface plane, afficheur a surface plane et moule utilisable dans le cadre de la fabrication de l'ensemble espaceur
JP2002198001A (ja) * 2000-12-25 2002-07-12 Matsushita Electric Works Ltd 画像表示装置

Also Published As

Publication number Publication date
KR20040099440A (ko) 2004-11-26
TWI287817B (en) 2007-10-01
CN1647233A (zh) 2005-07-27
US20050046333A1 (en) 2005-03-03
US7071610B2 (en) 2006-07-04
KR100704801B1 (ko) 2007-04-10
EP1496539A1 (fr) 2005-01-12
JP2003308798A (ja) 2003-10-31
US20060211324A1 (en) 2006-09-21
TW200306605A (en) 2003-11-16

Similar Documents

Publication Publication Date Title
JP2004171968A (ja) 平面型表示装置
US20060211324A1 (en) Image display device and manufacturing method for image display device
JP2000323076A (ja) 画像形成装置
WO2006070612A1 (fr) Dispositif d’affichage d’image
US20090161022A1 (en) Wiring board, electron source, image display apparatus, and image reproducing apparatus
US20060197435A1 (en) Emissive flat panel display device
JP4494301B2 (ja) 画像表示装置
US6635984B1 (en) Image-forming apparatus
JP2003346689A (ja) 表示装置
JP2566155B2 (ja) 平板型画像表示装置
JP3397520B2 (ja) 電子源、表示パネルおよび画像形成装置ならびにそれらの製造方法
JP3740296B2 (ja) 画像形成装置
JP3118683B2 (ja) 画像形成装置
JP2002008569A (ja) 画像形成装置
JPWO2003102999A1 (ja) 画像表示装置
JP2004241292A (ja) 冷陰極電界電子放出表示装置
JP2000285833A (ja) 表示装置
JP3825703B2 (ja) 画像表示装置
JP2000357479A (ja) 画像形成装置
JP2003257343A (ja) 画像表示装置
JP2006024387A (ja) 画像表示装置
JP2000251792A (ja) ディスプレイパネルおよび画像表示装置
JP2005235621A (ja) 画像表示装置
JPH11245368A (ja) 印刷機及び画像形成装置の製造方法
WO2006025175A1 (fr) Unité d'affichage

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): DE FR GB IT NL

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1020047016394

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 10965262

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 20038085917

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2003712990

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020047016394

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2003712990

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2003712990

Country of ref document: EP