WO2003053880A1 - Materiau a base de si a coefficient de conduction thermique eleve et son procede de fabrication - Google Patents
Materiau a base de si a coefficient de conduction thermique eleve et son procede de fabrication Download PDFInfo
- Publication number
- WO2003053880A1 WO2003053880A1 PCT/JP2002/013273 JP0213273W WO03053880A1 WO 2003053880 A1 WO2003053880 A1 WO 2003053880A1 JP 0213273 W JP0213273 W JP 0213273W WO 03053880 A1 WO03053880 A1 WO 03053880A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thermal conductivity
- silicon
- containing material
- silicon carbide
- phase
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/428—Silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B2235/728—Silicon content
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/761—Unit-cell parameters, e.g. lattice constants
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
- C04B2235/9623—Ceramic setters properties
Definitions
- the present invention relates to a high thermal conductivity Si-containing material and a method for producing the same.
- a (porous or dense) Si-containing material containing Si as a metal Si phase for example, a metal-silicon-silicon carbide composite material or silicon carbide containing Si and Si as a main phase
- the material used as the component is high in strength and excellent in heat resistance, oxidation resistance and heat conductivity, so it is currently used in a variety of applications such as kiln tools, heat treatment jigs, and honeycomb filters. It is used.
- the present invention has been made in view of the problems of the prior art described above, and the purpose of the present invention is to prevent the decrease in thermal conductivity by controlling the lattice constant of the S i phase at room temperature.
- An object of the present invention is to provide a high thermal conductivity Si-containing material capable of stably expressing high thermal conductivity and a method for producing the same. Disclosure of the invention
- high thermal conductivity characterized in that the lattice constant at room temperature exceeds 0.5 nm and includes a Si phase controlled to 0.5 nm or less.
- An Si-containing material is provided.
- the boron content in the Si phase is preferably 0.2% by weight or less.
- the Si-containing material may be any of metallic silicon / silicon carbide based material, metallic silicon / monocarbonated silicon composite material, material mainly composed of silicon carbide, and material mainly composed of silicon. One is preferred.
- a method for producing a high thermal conductivity Si-containing material characterized in that it is fired using a crucible material not containing a B-containing compound.
- the crucible material is preferably alumina or oxide-bonded silicon carbide material.
- the Si-containing material of the present invention contains a Si phase whose lattice constant at room temperature is more than 0.5 4 230 nm and controlled to 0.5 4 nm or less It is.
- the thermal conductivity can be prevented from lowering and high thermal conductivity can be stably expressed.
- the content of boron in the Si phase is preferably 0.2% by weight or less in order to control the lattice constant.
- the main feature of the Si-containing material of the present invention focuses on the decrease in the thermal conductivity of the Si-containing material due to the reduction of the lattice constant due to the solid solution of B (boron).
- the boron content in the Si phase is optimized so as to include a Si phase controlled to 4 nm or more and 0.54 nm or less.
- the Si-containing material may be any of metallic silicon-silicon carbide based material, metallic silicon monocarbide silicon based composite material, material mainly composed of silicon carbide, and material mainly composed of silicon.
- metallic silicon-silicon carbide based material metallic silicon monocarbide silicon based composite material, material mainly composed of silicon carbide, and material mainly composed of silicon.
- metal silicon monosilicon carbide based materials are some from silicon phase consisting of silicon remaining in an unreacted state to almost pure silicon carbide.
- the silicon carbide phase typically contains a silicon phase and a silicon carbide phase, but the silicon carbide phase may contain an SiC coexistence phase in which the content of silicon changes gradually.
- metallic silicon-silicon carbide materials are materials that are contained in the range of O mo I% to 5 O mo 1% as the concentration of carbon in the Si-SiC series as described above. Is a generic term for
- metallic silicon / silicon carbide based composite materials are, for example, materials in which a CZC composite is impregnated with Si, and at least carbon fiber bundles and carbon components other than carbon fibers. Yarns that are three-dimensionally combined while oriented in the layer direction, and are integrated between the yarn assembly that is integrated so as not to separate from each other, and the yarns that are adjacent in the yarn assembly are And a matrix comprising the Si-SiC-based material.
- examples of the material containing silicon carbide as its main component include a silicon carbide material impregnated with metallic silicon, and a material in which the surface of the silicon carbide material is coated with metallic silicon.
- the main features of the manufacturing method of the present invention are: using a brazing material containing no B-containing compound (eg, BN etc.), Si-containing material (eg, metal silicon monosilicon carbide material, metal silicon-silicon carbide material) Composite materials, materials mainly composed of silicon carbide). This prevents the contact of the Si-containing material with B (boron), thereby preventing the decrease in the thermal conductivity of the Si-containing material due to the reduction of the lattice constant due to the solid solution of B (boron). can do.
- B-containing compound eg, BN etc.
- Si-containing material eg, metal silicon monosilicon carbide material, metal silicon-silicon carbide material
- Composite materials materials mainly composed of silicon carbide
- the above-mentioned crucible material is preferably alumina or an oxide-bonded silicon carbide material (a material obtained by sintering and solidifying a clay or the like to SiC as a binder).
- alumina or an oxide-bonded silicon carbide material a material obtained by sintering and solidifying a clay or the like to SiC as a binder.
- the lattice constant was calculated by the W PPD method from a diffraction profile obtained by X-ray diffraction at room temperature.
- the boron content in the Si phase was determined by extraction with metallic silicon by solution treatment and then quantified by ICP emission analysis, and the thermal conductivity was measured by a laser flash method at room temperature.
- Comparative Examples 1 to 3 are levels in which BN is used for setting, and S i directly reacts with BN, and it is a system in which dissolution through a solid-liquid interface can be considered during melting, As a result, the lattice constant was less than 0.5296 nm and the thermal conductivity was less than 80 WZmK.
- Comparative Examples 4 to 5 are the levels using BN in a mortar, S i is not in direct contact with BN, and an event assumed during S i melting is B (boron decomposed and generated from BN A system in which the vapor is considered to dissolve through the air-liquid interface with Si, and as a result, the lattice constant is less than 0.54302 nm and the thermal conductivity is less than 100 W / mK.
- the high thermal conductivity Si-containing material of the present invention and the method for producing the same prevent the lowering of the thermal conductivity and stably exhibit the high thermal conductivity by controlling the lattice constant of the Si phase at room temperature. be able to.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Products (AREA)
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002354232A AU2002354232A1 (en) | 2001-12-21 | 2002-12-19 | HIGH-HEAT CONDUCTIVITY Si-CONTAINING MATERIAL AND ITS MANUFACTURING METHOD |
EP02786149A EP1466879B1 (en) | 2001-12-21 | 2002-12-19 | Manufacturing method of highly heat-conductive si-containing material |
KR1020047009819A KR100607477B1 (ko) | 2001-12-21 | 2002-12-19 | 고열전도성 Si 함유 재료 및 그 제조 방법 |
DE60239359T DE60239359D1 (de) | 2001-12-21 | 2002-12-19 | HERSTELLUNGSVERFAHREN EINES GUT WÄRMELEITENDES Si-HALTENDES MATERIAL |
US10/498,807 US20050124483A1 (en) | 2001-12-21 | 2002-12-19 | High-heat conductivity si-containing material and its manufacturing method |
US11/412,796 US7442662B2 (en) | 2001-12-21 | 2006-04-28 | High-heat conductive Si-containing material and its manufacturing method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-389459 | 2001-12-21 | ||
JP2001389459 | 2001-12-21 | ||
JP2002-017373 | 2002-01-25 | ||
JP2002017373A JP4136380B2 (ja) | 2001-12-21 | 2002-01-25 | 高熱伝導性含Si材料及びその製造方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10498807 A-371-Of-International | 2002-12-19 | ||
US11/412,796 Division US7442662B2 (en) | 2001-12-21 | 2006-04-28 | High-heat conductive Si-containing material and its manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003053880A1 true WO2003053880A1 (fr) | 2003-07-03 |
Family
ID=26625209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/013273 WO2003053880A1 (fr) | 2001-12-21 | 2002-12-19 | Materiau a base de si a coefficient de conduction thermique eleve et son procede de fabrication |
Country Status (7)
Country | Link |
---|---|
US (2) | US20050124483A1 (ja) |
EP (1) | EP1466879B1 (ja) |
JP (1) | JP4136380B2 (ja) |
KR (1) | KR100607477B1 (ja) |
AU (1) | AU2002354232A1 (ja) |
DE (1) | DE60239359D1 (ja) |
WO (1) | WO2003053880A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3927038B2 (ja) * | 2001-12-21 | 2007-06-06 | 日本碍子株式会社 | Si含有ハニカム構造体及びその製造方法 |
JP5048266B2 (ja) * | 2006-04-27 | 2012-10-17 | 株式会社アライドマテリアル | 放熱基板とその製造方法 |
EP2514713B1 (en) | 2011-04-20 | 2013-10-02 | Tronics Microsystems S.A. | A micro-electromechanical system (MEMS) device |
JP6633014B2 (ja) | 2017-03-17 | 2020-01-22 | 日本碍子株式会社 | 炭化珪素質ハニカム構造体の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55109273A (en) * | 1979-02-13 | 1980-08-22 | Asahi Glass Co Ltd | Manufacture of silicon nitride sintered body |
US4299631A (en) | 1979-04-24 | 1981-11-10 | United Kingdom Atomic Energy Authority | Silicon carbide bodies and their production |
JPS60131862A (ja) * | 1983-12-16 | 1985-07-13 | 三菱マテリアル株式会社 | 高強度炭化けい素基焼結体 |
EP0519644A1 (en) | 1991-06-17 | 1992-12-23 | General Electric Company | Silicon carbide composite with metal nitride coated fiber reinforcement |
JPH10291857A (ja) * | 1997-04-22 | 1998-11-04 | Hitachi Chem Co Ltd | 高電気比抵抗SiC焼結体 |
US5846460A (en) * | 1995-07-26 | 1998-12-08 | Sumitomo Electric Industries, Ltd. | Method of preparing silicon nitride porous body |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60221380A (ja) * | 1984-04-13 | 1985-11-06 | 株式会社日立製作所 | 炭化けい素焼結体のメタライズ法 |
US4970057A (en) * | 1989-04-28 | 1990-11-13 | Norton Company | Silicon nitride vacuum furnace process |
US5432253A (en) * | 1989-12-18 | 1995-07-11 | General Electric Company | Composite containing fibrous material |
EP0486938B1 (en) * | 1990-11-20 | 1999-05-19 | Asahi Glass Company Ltd. | Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof |
JPH0813706B2 (ja) | 1991-07-02 | 1996-02-14 | 工業技術院長 | 炭化珪素/金属珪素複合体及びその製造方法 |
US5589116A (en) * | 1991-07-18 | 1996-12-31 | Sumitomo Metal Industries, Ltd. | Process for preparing a silicon carbide sintered body for use in semiconductor equipment |
JPH06345412A (ja) | 1993-06-07 | 1994-12-20 | Mitsubishi Gas Chem Co Inc | 高純度窒化ケイ素−炭化ケイ素複合微粉末およびその製造方法 |
JP3497355B2 (ja) * | 1997-10-06 | 2004-02-16 | 信越フィルム株式会社 | シリコンの精製方法 |
JP3686247B2 (ja) | 1998-01-20 | 2005-08-24 | 富士通株式会社 | 半導体装置及びその製造方法 |
EP1103532B1 (en) * | 1998-08-07 | 2005-02-02 | Bridgestone Corporation | Process for the production of a silicon carbide sintered body |
US6387834B1 (en) * | 1999-06-02 | 2002-05-14 | Bridgestone Corporation | Sintered silicon carbide body and method for producing the same |
US6737168B1 (en) * | 1999-06-14 | 2004-05-18 | Sumitomo Electric Industries, Ltd. | Composite material and semiconductor device using the same |
JP2001019552A (ja) * | 1999-07-09 | 2001-01-23 | Bridgestone Corp | 炭化ケイ素焼結体及びその製造方法 |
KR20020073328A (ko) | 1999-07-23 | 2002-09-23 | 엠큐브드 테크놀로지스, 인크. | 탄화규소 복합물 및 그 제조 방법 |
EP1184355B1 (en) * | 2000-02-15 | 2006-12-13 | Toshiba Ceramics Co., Ltd. | METHOD FOR MANUFACTURING Si-SiC MEMBER FOR SEMICONDUCTOR HEAT TREATMENT |
JP4136319B2 (ja) | 2000-04-14 | 2008-08-20 | 日本碍子株式会社 | ハニカム構造体及びその製造方法 |
US20030151152A1 (en) * | 2002-02-08 | 2003-08-14 | Coorstek, Inc. | Body armor and methods for its production |
-
2002
- 2002-01-25 JP JP2002017373A patent/JP4136380B2/ja not_active Expired - Lifetime
- 2002-12-19 US US10/498,807 patent/US20050124483A1/en not_active Abandoned
- 2002-12-19 EP EP02786149A patent/EP1466879B1/en not_active Expired - Lifetime
- 2002-12-19 DE DE60239359T patent/DE60239359D1/de not_active Expired - Lifetime
- 2002-12-19 WO PCT/JP2002/013273 patent/WO2003053880A1/ja active Application Filing
- 2002-12-19 AU AU2002354232A patent/AU2002354232A1/en not_active Abandoned
- 2002-12-19 KR KR1020047009819A patent/KR100607477B1/ko active IP Right Grant
-
2006
- 2006-04-28 US US11/412,796 patent/US7442662B2/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55109273A (en) * | 1979-02-13 | 1980-08-22 | Asahi Glass Co Ltd | Manufacture of silicon nitride sintered body |
US4299631A (en) | 1979-04-24 | 1981-11-10 | United Kingdom Atomic Energy Authority | Silicon carbide bodies and their production |
JPS60131862A (ja) * | 1983-12-16 | 1985-07-13 | 三菱マテリアル株式会社 | 高強度炭化けい素基焼結体 |
EP0519644A1 (en) | 1991-06-17 | 1992-12-23 | General Electric Company | Silicon carbide composite with metal nitride coated fiber reinforcement |
US5846460A (en) * | 1995-07-26 | 1998-12-08 | Sumitomo Electric Industries, Ltd. | Method of preparing silicon nitride porous body |
JPH10291857A (ja) * | 1997-04-22 | 1998-11-04 | Hitachi Chem Co Ltd | 高電気比抵抗SiC焼結体 |
Non-Patent Citations (1)
Title |
---|
THE JAPAN INSTITUTE OF METALS: "Kinzoku Data Book", 30 January 1984, MARUZEN CO., LTD., pages: 43, XP002964721 * |
Also Published As
Publication number | Publication date |
---|---|
JP4136380B2 (ja) | 2008-08-20 |
US20060194689A1 (en) | 2006-08-31 |
US7442662B2 (en) | 2008-10-28 |
EP1466879A4 (en) | 2007-07-25 |
JP2003246674A (ja) | 2003-09-02 |
EP1466879A1 (en) | 2004-10-13 |
KR100607477B1 (ko) | 2006-08-02 |
EP1466879B1 (en) | 2011-03-02 |
AU2002354232A1 (en) | 2003-07-09 |
US20050124483A1 (en) | 2005-06-09 |
DE60239359D1 (de) | 2011-04-14 |
KR20040071746A (ko) | 2004-08-12 |
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