WO2003042683A1 - Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method - Google Patents

Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method Download PDF

Info

Publication number
WO2003042683A1
WO2003042683A1 PCT/JP2002/011752 JP0211752W WO03042683A1 WO 2003042683 A1 WO2003042683 A1 WO 2003042683A1 JP 0211752 W JP0211752 W JP 0211752W WO 03042683 A1 WO03042683 A1 WO 03042683A1
Authority
WO
WIPO (PCT)
Prior art keywords
section
detecting method
floating diffusion
sensor
ion density
Prior art date
Application number
PCT/JP2002/011752
Other languages
English (en)
French (fr)
Inventor
Kazuaki Sawada
Masakatsu Uchiyama
Original Assignee
Bio-X Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bio-X Inc. filed Critical Bio-X Inc.
Priority to US10/495,808 priority Critical patent/US7049645B2/en
Priority to JP2003544466A priority patent/JP4195859B2/ja
Publication of WO2003042683A1 publication Critical patent/WO2003042683A1/ja

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
PCT/JP2002/011752 2001-11-16 2002-11-11 Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method WO2003042683A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/495,808 US7049645B2 (en) 2001-11-16 2002-11-11 FET type sensor, ion density detecting method comprising this sensor, and base sequence detecting method
JP2003544466A JP4195859B2 (ja) 2001-11-16 2002-11-11 Ｆｅｔ型センサと、そのセンサを用いたイオン濃度検出方法及び塩基配列検出方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001351657 2001-11-16
JP2001-351657 2001-11-16

Publications (1)

Publication Number Publication Date
WO2003042683A1 true WO2003042683A1 (en) 2003-05-22

Family

ID=19163939

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/011752 WO2003042683A1 (en) 2001-11-16 2002-11-11 Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method

Country Status (4)

Country Link
US (1) US7049645B2 (ja)
JP (1) JP4195859B2 (ja)
CN (1) CN100429509C (ja)
WO (1) WO2003042683A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006189416A (ja) * 2004-12-10 2006-07-20 Horiba Ltd 物理現象または化学現象の測定方法または測定装置
WO2006095903A1 (ja) * 2005-03-11 2006-09-14 National University Corporation Toyohashi University Of Technology 累積型化学・物理現象検出装置
JP2006284250A (ja) * 2005-03-31 2006-10-19 Horiba Ltd 物理現象または化学現象に係るポテンシャル測定装置
WO2007108465A1 (ja) * 2006-03-20 2007-09-27 National University Corporation Toyohashi University Of Technology 累積型化学・物理現象検出方法及びその装置
JP2008536103A (ja) * 2005-03-08 2008-09-04 ナショナル リサーチ カウンシル オブ カナダ 静電的に制御された原子的な規模の導電性デバイス
JP2010122090A (ja) * 2008-11-20 2010-06-03 Rohm Co Ltd イオンイメージセンサ及びダメージ計測装置
WO2013024791A1 (ja) * 2011-08-12 2013-02-21 国立大学法人豊橋技術科学大学 化学・物理現象検出装置及び検出方法
JP2013064745A (ja) * 2006-12-14 2013-04-11 Life Technologies Corp 大規模ｆｅｔアレイを用いた分析物測定のための方法および装置
WO2019225660A1 (ja) * 2018-05-25 2019-11-28 公立大学法人大阪 化学センサ

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0105831D0 (en) 2001-03-09 2001-04-25 Toumaz Technology Ltd Method for dna sequencing utilising enzyme linked field effect transistors
US8114591B2 (en) 2001-03-09 2012-02-14 Dna Electronics Ltd. Sensing apparatus and method
GB0211564D0 (en) 2002-05-21 2002-06-26 Tournaz Technology Ltd Reference circuit
US7368085B2 (en) * 2003-12-04 2008-05-06 Honeywell International Inc. Analyte detector
US20050218464A1 (en) * 2004-03-18 2005-10-06 Holm-Kennedy James W Biochemical ultrasensitive charge sensing
ITTO20040386A1 (it) * 2004-06-09 2004-09-09 Infm Istituto Naz Per La Fisi Dispositivo ad effetto di campo per la rilevazione di piccole quantita' di carica elettrica, come quelle generate in processi biomolecolari, immobilizzate nelle vicinanze della superficie.
US7692219B1 (en) 2004-06-25 2010-04-06 University Of Hawaii Ultrasensitive biosensors
US7785785B2 (en) 2004-11-12 2010-08-31 The Board Of Trustees Of The Leland Stanford Junior University Charge perturbation detection system for DNA and other molecules
US7629174B2 (en) * 2005-08-26 2009-12-08 Honeywell International Inc. Analyte detector
US8262900B2 (en) * 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
KR101176547B1 (ko) * 2006-12-20 2012-08-24 리전츠 오브 더 유니버스티 오브 미네소타 잡음이 감소된 이온 물질 검출 장치 및 방법
US20100176463A1 (en) * 2007-07-19 2010-07-15 Renesas Technology Corp. Semiconductor device and manufacturing method of the same
US8762887B2 (en) * 2008-06-06 2014-06-24 Apple Inc. Browsing or searching user interfaces and other aspects
WO2010008480A2 (en) * 2008-06-25 2010-01-21 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes using large scale fet arrays
GB2461128B (en) * 2008-06-25 2010-12-15 Ion Torrent Systems Inc ChemFET Arrays for Nucleic Acid Sequencing
US20100035252A1 (en) * 2008-08-08 2010-02-11 Ion Torrent Systems Incorporated Methods for sequencing individual nucleic acids under tension
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
CN103884760A (zh) * 2008-10-22 2014-06-25 生命技术公司 单芯片化学测定装置和单芯片核酸测定装置
DE102008043858A1 (de) * 2008-11-19 2010-05-20 Robert Bosch Gmbh Verfahren zur Passivierung eines Feldeffekttransistors
CN101592627B (zh) * 2009-03-19 2012-12-05 中国科学院苏州纳米技术与纳米仿生研究所 多通道高灵敏生物传感器的制作集成方法
US8574835B2 (en) 2009-05-29 2013-11-05 Life Technologies Corporation Scaffolded nucleic acid polymer particles and methods of making and using
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8673627B2 (en) 2009-05-29 2014-03-18 Life Technologies Corporation Apparatus and methods for performing electrochemical reactions
US8735887B2 (en) * 2010-06-03 2014-05-27 Sharp Kabushiki Kaisha Ion sensor and display device
US20120035062A1 (en) 2010-06-11 2012-02-09 Life Technologies Corporation Alternative nucleotide flows in sequencing-by-synthesis methods
AU2011226767B1 (en) 2010-06-30 2011-11-10 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
CN114019006A (zh) 2010-06-30 2022-02-08 生命科技公司 阵列列积分器
CN106932456B (zh) 2010-06-30 2020-02-21 生命科技公司 用于测试isfet阵列的方法和装置
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
JP5876044B2 (ja) 2010-07-03 2016-03-02 ライフ テクノロジーズ コーポレーション 低濃度ドープドレインを有する化学的感応性センサ
US20120045368A1 (en) 2010-08-18 2012-02-23 Life Technologies Corporation Chemical Coating of Microwell for Electrochemical Detection Device
US9618475B2 (en) 2010-09-15 2017-04-11 Life Technologies Corporation Methods and apparatus for measuring analytes
CN105911126B (zh) 2010-09-24 2018-12-18 生命科技公司 匹配的晶体管对电路
US9594870B2 (en) 2010-12-29 2017-03-14 Life Technologies Corporation Time-warped background signal for sequencing-by-synthesis operations
US10241075B2 (en) 2010-12-30 2019-03-26 Life Technologies Corporation Methods, systems, and computer readable media for nucleic acid sequencing
US10146906B2 (en) 2010-12-30 2018-12-04 Life Technologies Corporation Models for analyzing data from sequencing-by-synthesis operations
US20130060482A1 (en) 2010-12-30 2013-03-07 Life Technologies Corporation Methods, systems, and computer readable media for making base calls in nucleic acid sequencing
CN105861645B (zh) 2011-04-08 2020-02-21 生命科技股份有限公司 用于合成测序中的相保护试剂流排序
EP2745108B1 (en) 2011-08-18 2019-06-26 Life Technologies Corporation Methods, systems, and computer readable media for making base calls in nucleic acid sequencing
JP2013050426A (ja) * 2011-08-31 2013-03-14 Chiba Univ Ｆｅｔ型センサを用いたインフルエンザウイルスｒｎａの検出方法
US10704164B2 (en) 2011-08-31 2020-07-07 Life Technologies Corporation Methods, systems, computer readable media, and kits for sample identification
WO2013074796A1 (en) * 2011-11-15 2013-05-23 The Board Of Trustees Of The University Of Illinois Thermal control of droplets by nanoscale field effect transistors
DE102012110871A1 (de) * 2011-11-17 2013-06-20 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG Sensor zum Erfassen einer Messgröße eines Mediums
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US9194840B2 (en) 2012-01-19 2015-11-24 Life Technologies Corporation Sensor arrays and methods for making same
US8747748B2 (en) 2012-01-19 2014-06-10 Life Technologies Corporation Chemical sensor with conductive cup-shaped sensor surface
US8821798B2 (en) 2012-01-19 2014-09-02 Life Technologies Corporation Titanium nitride as sensing layer for microwell structure
US9646132B2 (en) 2012-05-11 2017-05-09 Life Technologies Corporation Models for analyzing data from sequencing-by-synthesis operations
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9599586B2 (en) * 2012-08-27 2017-03-21 Infineon Technologies Ag Ion sensor
US10329608B2 (en) 2012-10-10 2019-06-25 Life Technologies Corporation Methods, systems, and computer readable media for repeat sequencing
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8962366B2 (en) 2013-01-28 2015-02-24 Life Technologies Corporation Self-aligned well structures for low-noise chemical sensors
US9045795B2 (en) * 2013-03-13 2015-06-02 Life Technologies Corporation Methods to control dissolved gas
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US8841217B1 (en) 2013-03-13 2014-09-23 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20140296080A1 (en) 2013-03-14 2014-10-02 Life Technologies Corporation Methods, Systems, and Computer Readable Media for Evaluating Variant Likelihood
US20140264471A1 (en) 2013-03-15 2014-09-18 Life Technologies Corporation Chemical device with thin conductive element
EP2972279B1 (en) 2013-03-15 2021-10-06 Life Technologies Corporation Chemical sensors with consistent sensor surface areas
US20140264472A1 (en) 2013-03-15 2014-09-18 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US9116117B2 (en) 2013-03-15 2015-08-25 Life Technologies Corporation Chemical sensor with sidewall sensor surface
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
WO2015051338A1 (en) 2013-10-04 2015-04-09 Life Technologies Corporation Methods and systems for modeling phasing effects in sequencing using termination chemistry
US9395326B2 (en) 2013-11-01 2016-07-19 Taiwan Semiconductor Manufacturing Company Limited FET sensing cell and method of improving sensitivity of the same
US9476853B2 (en) 2013-12-10 2016-10-25 Life Technologies Corporation System and method for forming microwells
CN103969314B (zh) * 2014-05-06 2017-02-15 中国农业科学院农业信息研究所 多参数离子传感器及其制备方法、多参数离子传感器芯片和监测系统
WO2016060974A1 (en) 2014-10-13 2016-04-21 Life Technologies Corporation Methods, systems, and computer-readable media for accelerated base calling
JP6228098B2 (ja) 2014-10-20 2017-11-08 シャープ株式会社 化学・物理現象検出装置及びその製造方法
DE102014115980B4 (de) * 2014-11-03 2022-06-23 Infineon Technologies Ag Gerät zum Analysieren der Ionenkinetik in Dielektrika
WO2016100521A1 (en) 2014-12-18 2016-06-23 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale fet arrays
EP4354131A2 (en) 2014-12-18 2024-04-17 Life Technologies Corporation High data rate integrated circuit with transmitter configuration
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
WO2016183478A1 (en) 2015-05-14 2016-11-17 Life Technologies Corporation Barcode sequences, and related systems and methods
JP6307058B2 (ja) * 2015-12-03 2018-04-04 シャープ株式会社 イオン濃度センサ、およびイオン濃度測定方法
JP6447925B2 (ja) 2015-12-15 2019-01-09 シャープ株式会社 イオン濃度センサ
US10619205B2 (en) 2016-05-06 2020-04-14 Life Technologies Corporation Combinatorial barcode sequences, and related systems and methods

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247151A (ja) * 1984-05-23 1985-12-06 Fujitsu Ltd Ｆｅｔバイオセンサ
JPH06249826A (ja) * 1993-02-26 1994-09-09 Tokyo Gas Co Ltd Ｆｅｔセンサ
JPH08278281A (ja) * 1995-04-07 1996-10-22 Hitachi Ltd 電界効果型化学物質検出装置およびそれを用いたｄｎａ配列決定装置
JPH10332423A (ja) * 1997-05-29 1998-12-18 Horiba Ltd 物理現象または化学現象の測定方法および装置
JP2001033274A (ja) * 1999-07-23 2001-02-09 Horiba Ltd 物理／化学二次元分布測定装置
JP2001511245A (ja) * 1996-04-17 2001-08-07 モトローラ・インコーポレイテッド トランジスタによる分子検出装置および方法
JP2002009274A (ja) * 2000-06-21 2002-01-11 Horiba Ltd 化学ｃｃｄセンサ
JP2002098667A (ja) * 2000-09-27 2002-04-05 Japan Science & Technology Corp 累積型化学・物理現象検出装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4156818A (en) * 1975-12-23 1979-05-29 International Business Machines Corporation Operating circuitry for semiconductor charge coupled devices
US4275315A (en) * 1979-10-10 1981-06-23 Hughes Aircraft Company Charge summing filter aperture corrector
JPS61131854U (ja) * 1985-02-06 1986-08-18

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247151A (ja) * 1984-05-23 1985-12-06 Fujitsu Ltd Ｆｅｔバイオセンサ
JPH06249826A (ja) * 1993-02-26 1994-09-09 Tokyo Gas Co Ltd Ｆｅｔセンサ
JPH08278281A (ja) * 1995-04-07 1996-10-22 Hitachi Ltd 電界効果型化学物質検出装置およびそれを用いたｄｎａ配列決定装置
JP2001511245A (ja) * 1996-04-17 2001-08-07 モトローラ・インコーポレイテッド トランジスタによる分子検出装置および方法
JPH10332423A (ja) * 1997-05-29 1998-12-18 Horiba Ltd 物理現象または化学現象の測定方法および装置
JP2001033274A (ja) * 1999-07-23 2001-02-09 Horiba Ltd 物理／化学二次元分布測定装置
JP2002009274A (ja) * 2000-06-21 2002-01-11 Horiba Ltd 化学ｃｃｄセンサ
JP2002098667A (ja) * 2000-09-27 2002-04-05 Japan Science & Technology Corp 累積型化学・物理現象検出装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KAZUAKI SAWADA, HIDEKUNI TAKAO, MAKOTO ISHIDA: "Denka tenso gijutsu o mochiita kokando kagaku potential sensor device", THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS GIJUTSU KENKYU HOKOKU, vol. 101, no. 83, 8 May 2001 (2001-05-08), pages 57 - 61, XP002965203 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006189416A (ja) * 2004-12-10 2006-07-20 Horiba Ltd 物理現象または化学現象の測定方法または測定装置
JP4678676B2 (ja) * 2004-12-10 2011-04-27 株式会社堀場製作所 物理現象または化学現象の測定方法または測定装置
JP2008536103A (ja) * 2005-03-08 2008-09-04 ナショナル リサーチ カウンシル オブ カナダ 静電的に制御された原子的な規模の導電性デバイス
WO2006095903A1 (ja) * 2005-03-11 2006-09-14 National University Corporation Toyohashi University Of Technology 累積型化学・物理現象検出装置
JP4641444B2 (ja) * 2005-03-31 2011-03-02 株式会社堀場製作所 物理現象または化学現象に係るポテンシャル測定装置
JP2006284250A (ja) * 2005-03-31 2006-10-19 Horiba Ltd 物理現象または化学現象に係るポテンシャル測定装置
WO2007108465A1 (ja) * 2006-03-20 2007-09-27 National University Corporation Toyohashi University Of Technology 累積型化学・物理現象検出方法及びその装置
JP5335415B2 (ja) * 2006-03-20 2013-11-06 国立大学法人豊橋技術科学大学 累積型化学・物理現象検出方法及びその装置
JP2013064745A (ja) * 2006-12-14 2013-04-11 Life Technologies Corp 大規模ｆｅｔアレイを用いた分析物測定のための方法および装置
JP2010122090A (ja) * 2008-11-20 2010-06-03 Rohm Co Ltd イオンイメージセンサ及びダメージ計測装置
WO2013024791A1 (ja) * 2011-08-12 2013-02-21 国立大学法人豊橋技術科学大学 化学・物理現象検出装置及び検出方法
US9482641B2 (en) 2011-08-12 2016-11-01 National University Corporation Toyohashi University Of Technology Device and method for detecting chemical and physical phenomena
WO2019225660A1 (ja) * 2018-05-25 2019-11-28 公立大学法人大阪 化学センサ

Also Published As

Publication number Publication date
US7049645B2 (en) 2006-05-23
US20050062093A1 (en) 2005-03-24
CN1585896A (zh) 2005-02-23
CN100429509C (zh) 2008-10-29
JPWO2003042683A1 (ja) 2005-03-10
JP4195859B2 (ja) 2008-12-17

Similar Documents

Publication Publication Date Title
WO2003042683A1 (en) Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method
JP6101198B2 (ja) 選択的／差動閾値電圧機能を含む不揮発性メモリ検知システム及び方法
WO2004034426A3 (en) Non-volatile memory device and method for forming
DE69932942D1 (de) Integrierte hallanordnung
WO2000038233A3 (en) High-precision blooming control structure formation for an image sensor
EP0856892A3 (en) MOSFET and manufacturing method thereof
JPS6442176A (en) Semiconductor device and manufacture thereof
TW200610142A (en) Image sensor with improved charge transfer efficiency and method for fabricating the same
EP1244150A3 (en) Vertical MOSFET having a trench gate electrode and method of making the same
WO2006026633A3 (en) Flow sensor with self-aligned flow channel
TW200509261A (en) Split-gate metal-oxide-semiconductor device
EP2139039A3 (en) CMOS image sensor with a special MOS transistor
WO2003060441A3 (en) Sensor device having an integral bi-radial lens
TW200419862A (en) Semiconductor element and its manufacture
TW200605379A (en) Photoelectric conversion device, image sensor, and method for manufacturing photoelectric conversion device
TW200509374A (en) Semiconductor device and manufacturing method thereof
WO2007034376A3 (en) Memory device with a strained base layer and method of manufacturing such a memory device
TW200507242A (en) Semiconductor device
WO2006121566A3 (en) Ultrascalable vertical mos transistor with planar contacts
TW200620653A (en) Method of forming a raised source/drain and a semiconductor device employing the same
WO2003003452A3 (en) Field-effect transistor and method of making the same
JPS5480194A (en) Semiconductor gas sensor
TWI264122B (en) Semiconductor device and method for fabricating the same
TW200625608A (en) Non-volatile memory device and manufacturing method and operating method thereof
WO2003085722A3 (en) Field effect transistor having a lateral depletion structure

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003544466

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 20028225392

Country of ref document: CN

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 69(1) EPC (EPO FORM 1205A OF 24.08.2004)

WWE Wipo information: entry into national phase

Ref document number: 10495808

Country of ref document: US

122 Ep: pct application non-entry in european phase