WO2003085722A3 - Field effect transistor having a lateral depletion structure - Google Patents

Field effect transistor having a lateral depletion structure Download PDF

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Publication number
WO2003085722A3
WO2003085722A3 PCT/US2002/010008 US0210008W WO03085722A3 WO 2003085722 A3 WO2003085722 A3 WO 2003085722A3 US 0210008 W US0210008 W US 0210008W WO 03085722 A3 WO03085722 A3 WO 03085722A3
Authority
WO
WIPO (PCT)
Prior art keywords
field effect
effect transistor
lateral depletion
semiconductor substrate
transistor device
Prior art date
Application number
PCT/US2002/010008
Other languages
French (fr)
Other versions
WO2003085722A2 (en
Inventor
Bruce D Marchant
Original Assignee
Fairchild Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor filed Critical Fairchild Semiconductor
Priority to PCT/US2002/010008 priority Critical patent/WO2003085722A2/en
Priority to JP2003582807A priority patent/JP2005522052A/en
Priority to DE10297694T priority patent/DE10297694T5/en
Priority to CNB028290518A priority patent/CN100472735C/en
Publication of WO2003085722A2 publication Critical patent/WO2003085722A2/en
Publication of WO2003085722A3 publication Critical patent/WO2003085722A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs

Abstract

A field effect transistor device and a method for making a field effect transistor device are disclosed. The field effect transistor device includes a stripe trench extending from the major surface of a semiconductor substrate (29) into the semiconductor substrate (29) to a predetermined depth. The stripe trench (35) contains a semiconductor material of the second conductivity type to form a PN junction at an interface formed with the semiconductor substrate (29).
PCT/US2002/010008 2002-03-29 2002-03-29 Field effect transistor having a lateral depletion structure WO2003085722A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/US2002/010008 WO2003085722A2 (en) 2002-03-29 2002-03-29 Field effect transistor having a lateral depletion structure
JP2003582807A JP2005522052A (en) 2002-03-29 2002-03-29 Field effect transistor with lateral depletion structure
DE10297694T DE10297694T5 (en) 2002-03-29 2002-03-29 Field effect transistor with a lateral depletion structure
CNB028290518A CN100472735C (en) 2002-03-29 2002-03-29 Field effect transistor having lateral depletion structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/010008 WO2003085722A2 (en) 2002-03-29 2002-03-29 Field effect transistor having a lateral depletion structure

Publications (2)

Publication Number Publication Date
WO2003085722A2 WO2003085722A2 (en) 2003-10-16
WO2003085722A3 true WO2003085722A3 (en) 2003-11-27

Family

ID=28789609

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/010008 WO2003085722A2 (en) 2002-03-29 2002-03-29 Field effect transistor having a lateral depletion structure

Country Status (4)

Country Link
JP (1) JP2005522052A (en)
CN (1) CN100472735C (en)
DE (1) DE10297694T5 (en)
WO (1) WO2003085722A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080028858A (en) * 2005-04-22 2008-04-02 아이스모스 테크날러지 코포레이션 Superjunction device having oxide lined trenches and method for manufacturing a superjunction device having oxide lined trenches
JP2007012977A (en) 2005-07-01 2007-01-18 Toshiba Corp Semiconductor device
JP5135759B2 (en) * 2006-10-19 2013-02-06 富士電機株式会社 Manufacturing method of super junction semiconductor device
EP2208229A4 (en) 2007-09-21 2011-03-16 Fairchild Semiconductor Superjunction structures for power devices and methods of manufacture
CN101656213B (en) * 2008-08-19 2012-09-26 尼克森微电子股份有限公司 Trench gate metal oxide semiconductor field effect transistor and manufacturing method thereof
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
CN103367438B (en) * 2012-04-01 2017-09-12 朱江 A kind of semiconductor device of metal semiconductor charge compensation and preparation method thereof
JP2012160753A (en) * 2012-04-13 2012-08-23 Denso Corp Semiconductor device manufacturing method
CN103390650B (en) * 2012-05-04 2017-08-08 朱江 One kind has passive metal Schottky semiconductor device and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801417A (en) * 1988-05-17 1998-09-01 Advanced Power Technology, Inc. Self-aligned power MOSFET device with recessed gate and source
US6201279B1 (en) * 1998-10-22 2001-03-13 Infineon Technologies Ag Semiconductor component having a small forward voltage and high blocking ability
US6239463B1 (en) * 1997-08-28 2001-05-29 Siliconix Incorporated Low resistance power MOSFET or other device containing silicon-germanium layer
US6274905B1 (en) * 1999-06-30 2001-08-14 Fairchild Semiconductor Corporation Trench structure substantially filled with high-conductivity material
US6281547B1 (en) * 1997-05-08 2001-08-28 Megamos Corporation Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask
US6316806B1 (en) * 1999-03-31 2001-11-13 Fairfield Semiconductor Corporation Trench transistor with a self-aligned source

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801417A (en) * 1988-05-17 1998-09-01 Advanced Power Technology, Inc. Self-aligned power MOSFET device with recessed gate and source
US6281547B1 (en) * 1997-05-08 2001-08-28 Megamos Corporation Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask
US6239463B1 (en) * 1997-08-28 2001-05-29 Siliconix Incorporated Low resistance power MOSFET or other device containing silicon-germanium layer
US6201279B1 (en) * 1998-10-22 2001-03-13 Infineon Technologies Ag Semiconductor component having a small forward voltage and high blocking ability
US6316806B1 (en) * 1999-03-31 2001-11-13 Fairfield Semiconductor Corporation Trench transistor with a self-aligned source
US6274905B1 (en) * 1999-06-30 2001-08-14 Fairchild Semiconductor Corporation Trench structure substantially filled with high-conductivity material

Also Published As

Publication number Publication date
DE10297694T5 (en) 2005-05-12
CN1628377A (en) 2005-06-15
CN100472735C (en) 2009-03-25
WO2003085722A2 (en) 2003-10-16
JP2005522052A (en) 2005-07-21

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