GB2461128B - ChemFET Arrays for Nucleic Acid Sequencing - Google Patents

ChemFET Arrays for Nucleic Acid Sequencing

Info

Publication number
GB2461128B
GB2461128B GB0811657A GB0811657A GB2461128B GB 2461128 B GB2461128 B GB 2461128B GB 0811657 A GB0811657 A GB 0811657A GB 0811657 A GB0811657 A GB 0811657A GB 2461128 B GB2461128 B GB 2461128B
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
method
nucleic acid
array
manufacturing
acid sequencing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB0811657A
Other versions
GB0811657D0 (en )
GB2461128A (en )
Inventor
Jonathan M Rothberg
Wolfgang Hinz
Kim L Johnson
James Bustillo
John Leamon
Jonathan Schultz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ION TORRENT SYSTEMS Inc
Original Assignee
ION TORRENT SYSTEMS Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

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Classifications

    • CCHEMISTRY; METALLURGY
    • C12BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12QMEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q1/00Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/68Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
    • C12Q1/6869Methods for sequencing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H01L21/28008Making conductor-insulator-semiconductor electrodes
    • H01L21/28017Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158Making the insulator
    • H01L21/28167Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/112Read-only memory structures [ROM] and multistep manufacturing processes therefor
    • H01L27/115Electrically programmable read-only memories; Multistep manufacturing processes therefor
    • H01L27/11517Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
    • H01L27/11519Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the top-view layout
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324Gate electrodes for transistors with a floating gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148Integrated circuits therefor, e.g. fabricated by CMOS processing

Abstract

A method for sequencing a nucleic acid using chemFET (e.g. ISFET, pHFET) arrays based on monitoring changes in the concentration of inorganic pyrophosphate (PPi), hydrogen ions, and nucleotide triphosphates. Also claimed is an apparatus for detection of ion pulses comprising a laminar fluid flow system; a method for manufacturing a sequencing device comprising generating wells in a glass material on top of an array of transistors; a method for manufacturing an array of FETs coupled to a floating gate; and reaction methods for determining nucleotide sequences.
GB0811657A 2008-06-25 2008-06-25 ChemFET Arrays for Nucleic Acid Sequencing Active GB2461128B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0811657A GB2461128B (en) 2008-06-25 2008-06-25 ChemFET Arrays for Nucleic Acid Sequencing

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
GB0811657A GB2461128B (en) 2008-06-25 2008-06-25 ChemFET Arrays for Nucleic Acid Sequencing
EP20150170247 EP2982437B1 (en) 2008-06-25 2009-06-25 Methods and apparatus for measuring analytes using large scale fet arrays
PCT/US2009/003766 WO2010008480A3 (en) 2008-06-25 2009-06-25 Methods and apparatus for measuring analytes using large scale fet arrays
US13001182 US8470164B2 (en) 2008-06-25 2009-06-25 Methods and apparatus for measuring analytes using large scale FET arrays
CN 200980133866 CN102203282B (en) 2008-06-25 2009-06-25 Methods and apparatus for measuring analytes using large scale FET arrays
JP2011516300A JP5667049B2 (en) 2008-06-25 2009-06-25 Method and apparatus for measuring an analyte by using a large fet array
EP20090798251 EP2307577B1 (en) 2008-06-25 2009-06-25 Methods for measuring analytes using large scale fet arrays
US13193128 US8524057B2 (en) 2008-06-25 2011-07-28 Methods and apparatus for measuring analytes using large scale FET arrays
US13966184 US9458502B2 (en) 2008-06-25 2013-08-13 Methods and apparatus for measuring analytes using large scale FET arrays
US14520558 US9194000B2 (en) 2008-06-25 2014-10-22 Methods and apparatus for measuring analytes using large scale FET arrays
JP2014250922A JP6088481B2 (en) 2008-06-25 2014-12-11 Method and apparatus for measuring an analyte by using a large fet array
US15276709 US20170145497A1 (en) 2008-06-25 2016-09-26 Methods and apparatus for measuring analytes using large scale fet arrays
JP2017017569A JP6370938B2 (en) 2008-06-25 2017-02-02 Method and apparatus for measuring an analyte by using a large fet array

Publications (3)

Publication Number Publication Date
GB0811657D0 true GB0811657D0 (en) 2008-07-30
GB2461128A true GB2461128A (en) 2009-12-30
GB2461128B true GB2461128B (en) 2010-12-15

Family

ID=39683149

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0811657A Active GB2461128B (en) 2008-06-25 2008-06-25 ChemFET Arrays for Nucleic Acid Sequencing

Country Status (1)

Country Link
GB (1) GB2461128B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120202276A1 (en) 2010-02-26 2012-08-09 Life Technologies Corporation Modified Proteins and Methods of Making and Using Same
GB201018224D0 (en) * 2010-10-28 2010-12-15 Dna Electronics Chemical sensing device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003073088A2 (en) * 2001-03-09 2003-09-04 Christofer Toumazou Apparatus and method for the detection of localised fluctuactions of ionic charge by ion sensitive field effect transistors during a chemical reaction
US20050032075A1 (en) * 2002-10-01 2005-02-10 Hidenobu Yaku Method of detecting primer extension reaction, method of discriminating base type, device for discriminating base type, device for detecting pyrophosphate, method of detecting nucleic acid and tip for introducing sample solution
US20050062093A1 (en) * 2001-11-16 2005-03-24 Kazuaki Sawada Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method
US20060183145A1 (en) * 2005-01-31 2006-08-17 Stephen Turner Use of reversible extension terminator in nucleic acid sequencing
US20060199193A1 (en) * 2005-03-04 2006-09-07 Tae-Woong Koo Sensor arrays and nucleic acid sequencing applications
WO2008076406A2 (en) * 2006-12-14 2008-06-26 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes using large scale fet arrays

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003073088A2 (en) * 2001-03-09 2003-09-04 Christofer Toumazou Apparatus and method for the detection of localised fluctuactions of ionic charge by ion sensitive field effect transistors during a chemical reaction
US20050062093A1 (en) * 2001-11-16 2005-03-24 Kazuaki Sawada Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method
US20050032075A1 (en) * 2002-10-01 2005-02-10 Hidenobu Yaku Method of detecting primer extension reaction, method of discriminating base type, device for discriminating base type, device for detecting pyrophosphate, method of detecting nucleic acid and tip for introducing sample solution
US20060183145A1 (en) * 2005-01-31 2006-08-17 Stephen Turner Use of reversible extension terminator in nucleic acid sequencing
US20060199193A1 (en) * 2005-03-04 2006-09-07 Tae-Woong Koo Sensor arrays and nucleic acid sequencing applications
WO2008076406A2 (en) * 2006-12-14 2008-06-26 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes using large scale fet arrays

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Angew. Chem. Int. Ed., Vol.45, 2005, Sakata, T. et al., "DNA sequencing based on...", pp.2225-2228 *
Biosensors & Bioelectronics, Vol.22, 2007, Sakata, T. et al., "Direct transduction of allele-specific...", pp.1311-1316 *
Sensors & Actuators B, Vol.114, 2006, Purushothaman, S. et al., "Protons and single nucleotide...", pp.964-968 *

Also Published As

Publication number Publication date Type
GB0811657D0 (en) 2008-07-30 application
GB2461128A (en) 2009-12-30 application

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