WO2003041151A1 - Procede et dispositif pour la formation d'une couche d'oxyde - Google Patents

Procede et dispositif pour la formation d'une couche d'oxyde Download PDF

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Publication number
WO2003041151A1
WO2003041151A1 PCT/JP2002/011361 JP0211361W WO03041151A1 WO 2003041151 A1 WO2003041151 A1 WO 2003041151A1 JP 0211361 W JP0211361 W JP 0211361W WO 03041151 A1 WO03041151 A1 WO 03041151A1
Authority
WO
WIPO (PCT)
Prior art keywords
specimen
oxidized
ozone gas
heating
susceptor
Prior art date
Application number
PCT/JP2002/011361
Other languages
English (en)
French (fr)
Inventor
Tetsuya Nishiguchi
Hidehiko Nonaka
Original Assignee
Kabushiki Kaisha Meidensha
National Institute Of Advanced Industrial Science And Technology
Ichimura, Shingo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Meidensha, National Institute Of Advanced Industrial Science And Technology, Ichimura, Shingo filed Critical Kabushiki Kaisha Meidensha
Priority to KR1020047006997A priority Critical patent/KR100623570B1/ko
Priority to US10/494,691 priority patent/US7214412B2/en
Publication of WO2003041151A1 publication Critical patent/WO2003041151A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G9/00—Developers
    • G03G9/08—Developers with toner particles
    • G03G9/09—Colouring agents for toner particles
    • G03G9/0906—Organic dyes
    • G03G9/091—Azo dyes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C23C8/12—Oxidising using elemental oxygen or ozone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
PCT/JP2002/011361 2001-11-08 2002-10-31 Procede et dispositif pour la formation d'une couche d'oxyde WO2003041151A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020047006997A KR100623570B1 (ko) 2001-11-08 2002-10-31 산화막 형성 방법 및 그 장치
US10/494,691 US7214412B2 (en) 2001-11-08 2002-10-31 Magenta toner and method for producing same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001-343237 2001-11-08
JP2001343237 2001-11-08
JP2002243242A JP4376496B2 (ja) 2001-11-08 2002-08-23 酸化膜形成方法及びその装置
JP2002-243242 2002-08-23

Publications (1)

Publication Number Publication Date
WO2003041151A1 true WO2003041151A1 (fr) 2003-05-15

Family

ID=26624418

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/011361 WO2003041151A1 (fr) 2001-11-08 2002-10-31 Procede et dispositif pour la formation d'une couche d'oxyde

Country Status (6)

Country Link
US (1) US7214412B2 (ja)
JP (1) JP4376496B2 (ja)
KR (1) KR100623570B1 (ja)
CN (1) CN100338744C (ja)
TW (1) TWI222133B (ja)
WO (1) WO2003041151A1 (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
JP4613587B2 (ja) * 2004-08-11 2011-01-19 株式会社明電舎 酸化膜形成方法とその装置
JP4785497B2 (ja) * 2005-02-22 2011-10-05 株式会社明電舎 酸化膜形成方法とその装置
JP4621848B2 (ja) * 2006-03-20 2011-01-26 岩谷産業株式会社 酸化薄膜の作成方法
JP5072288B2 (ja) * 2006-08-25 2012-11-14 株式会社明電舎 ゲート絶縁膜の形成方法、半導体素子の製造装置
DE102007002415B4 (de) * 2007-01-17 2011-04-28 Atlas Material Testing Technology Gmbh Vorrichtung zur Licht- oder Bewitterungsprüfung enthaltend ein Probengehäuse mit integriertem UV-Strahlungsfilter
JP2010529502A (ja) * 2007-06-08 2010-08-26 キャボット コーポレイション カーボンブラック、トナー、及び複合材料、並びにこれらの製造方法
JP4986054B2 (ja) * 2007-11-13 2012-07-25 株式会社明電舎 酸化膜形成方法及びその装置
JP5246846B2 (ja) * 2008-02-08 2013-07-24 独立行政法人産業技術総合研究所 高密度シリコン酸化膜の製造方法およびその製造方法により製造する高密度シリコン酸化膜を有するシリコン基板、半導体デバイス
JP5616591B2 (ja) 2008-06-20 2014-10-29 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5130589B2 (ja) * 2009-03-26 2013-01-30 三菱電機株式会社 半導体装置の製造方法および酸化処理装置
JP5403683B2 (ja) * 2010-01-22 2014-01-29 株式会社明電舎 酸化膜形成方法
JP5487522B2 (ja) * 2010-08-31 2014-05-07 株式会社明電舎 酸化膜改質方法及び酸化膜改質装置
CN102345087A (zh) * 2011-06-17 2012-02-08 范犇 一种用于金属防腐蚀的纳米放射处理装置
JP2013163846A (ja) * 2012-02-10 2013-08-22 Denso Corp 成膜装置及び成膜方法
CN105322046B (zh) * 2014-06-13 2017-06-09 南京华伯仪器科技有限公司 一种用于对晶体硅进行钝化的设备及方法
CN104238296B (zh) * 2014-08-06 2018-12-11 湖北鼎龙控股股份有限公司 微波辐射法辅助制备彩色碳粉的方法
KR102520541B1 (ko) * 2018-02-14 2023-04-10 엘지디스플레이 주식회사 산화물 박막의 제조 장치와 제조 방법 및 그 산화물 박막을 포함하는 디스플레이 장치
JP2022041077A (ja) * 2020-08-31 2022-03-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2022072305A (ja) * 2020-10-29 2022-05-17 キヤノン株式会社 活性酸素供給装置
CN113930712B (zh) * 2021-09-29 2024-03-22 西安理工大学 一种超临界发电机组腐蚀防护方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62237733A (ja) * 1986-04-08 1987-10-17 Nec Corp 酸化方法とその装置
JPS6341028A (ja) * 1986-08-06 1988-02-22 Tokyo Electron Ltd 酸化膜形成方法
JPH08335576A (ja) * 1995-06-06 1996-12-17 Agency Of Ind Science & Technol シリコン酸化膜の形成方法
JPH11204518A (ja) * 1998-01-09 1999-07-30 Nec Corp 半導体装置の製造方法及び製造装置
JP2000286251A (ja) * 1999-03-31 2000-10-13 Japan Storage Battery Co Ltd 紫外線処理装置
JP2000349079A (ja) * 1999-06-07 2000-12-15 Tokyo Electron Ltd 処理装置における紫外線ランプの光量測定方法及び装置
JP2001179079A (ja) * 1999-12-27 2001-07-03 Tokyo Electron Ltd オゾン処理装置及びオゾン処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0517164A (ja) * 1991-07-02 1993-01-26 Furukawa Electric Co Ltd:The ガラス微粒子の合成方法
JP2001030589A (ja) 1999-07-16 2001-02-06 Ricoh Co Ltd 画像形成装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62237733A (ja) * 1986-04-08 1987-10-17 Nec Corp 酸化方法とその装置
JPS6341028A (ja) * 1986-08-06 1988-02-22 Tokyo Electron Ltd 酸化膜形成方法
JPH08335576A (ja) * 1995-06-06 1996-12-17 Agency Of Ind Science & Technol シリコン酸化膜の形成方法
JPH11204518A (ja) * 1998-01-09 1999-07-30 Nec Corp 半導体装置の製造方法及び製造装置
JP2000286251A (ja) * 1999-03-31 2000-10-13 Japan Storage Battery Co Ltd 紫外線処理装置
JP2000349079A (ja) * 1999-06-07 2000-12-15 Tokyo Electron Ltd 処理装置における紫外線ランプの光量測定方法及び装置
JP2001179079A (ja) * 1999-12-27 2001-07-03 Tokyo Electron Ltd オゾン処理装置及びオゾン処理方法

Also Published As

Publication number Publication date
CN100338744C (zh) 2007-09-19
US20050191864A1 (en) 2005-09-01
KR100623570B1 (ko) 2006-09-14
TWI222133B (en) 2004-10-11
KR20040074984A (ko) 2004-08-26
CN1592958A (zh) 2005-03-09
US7214412B2 (en) 2007-05-08
JP2003209108A (ja) 2003-07-25
JP4376496B2 (ja) 2009-12-02
TW200300580A (en) 2003-06-01

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