WO2003038452A1 - Capteur de courant et procede de fabrication associe - Google Patents

Capteur de courant et procede de fabrication associe Download PDF

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Publication number
WO2003038452A1
WO2003038452A1 PCT/JP2002/011473 JP0211473W WO03038452A1 WO 2003038452 A1 WO2003038452 A1 WO 2003038452A1 JP 0211473 W JP0211473 W JP 0211473W WO 03038452 A1 WO03038452 A1 WO 03038452A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic flux
current sensor
magnetic
manufacturing
magnetic body
Prior art date
Application number
PCT/JP2002/011473
Other languages
English (en)
French (fr)
Inventor
Koji Shibahara
Yo Yamagata
Radivoje Popovic
Robert Racz
Original Assignee
Asahi Kasei Emd Corporation
Sentron Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Emd Corporation, Sentron Aktiengesellschaft filed Critical Asahi Kasei Emd Corporation
Priority to US10/493,985 priority Critical patent/US7129691B2/en
Priority to DE02775480T priority patent/DE02775480T1/de
Priority to JP2003540669A priority patent/JP4579538B2/ja
Priority to EP02775480.3A priority patent/EP1443332B1/en
Publication of WO2003038452A1 publication Critical patent/WO2003038452A1/ja

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
PCT/JP2002/011473 2001-11-01 2002-11-01 Capteur de courant et procede de fabrication associe WO2003038452A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/493,985 US7129691B2 (en) 2001-11-01 2002-11-01 Current sensor and current sensor manufacturing method
DE02775480T DE02775480T1 (de) 2001-11-01 2002-11-01 Stromsensor und stromsensor herstellungsverfahren
JP2003540669A JP4579538B2 (ja) 2001-11-01 2002-11-01 電流センサ及び電流センサの製造方法
EP02775480.3A EP1443332B1 (en) 2001-11-01 2002-11-01 Current sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001336682 2001-11-01
JP2001-336682 2001-11-01

Publications (1)

Publication Number Publication Date
WO2003038452A1 true WO2003038452A1 (fr) 2003-05-08

Family

ID=19151467

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/011473 WO2003038452A1 (fr) 2001-11-01 2002-11-01 Capteur de courant et procede de fabrication associe

Country Status (8)

Country Link
US (1) US7129691B2 (ja)
EP (1) EP1443332B1 (ja)
JP (1) JP4579538B2 (ja)
KR (1) KR100746546B1 (ja)
CN (1) CN1295514C (ja)
DE (1) DE02775480T1 (ja)
TW (1) TWI273266B (ja)
WO (1) WO2003038452A1 (ja)

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EP1857823A2 (de) 2006-05-16 2007-11-21 Melexis Technologies SA Vorrichtung zur Strommessung
US7709754B2 (en) 2003-08-26 2010-05-04 Allegro Microsystems, Inc. Current sensor
JP2011069837A (ja) * 2005-05-27 2011-04-07 Allegro Microsyst Inc 電流センサ
JP2013142604A (ja) * 2012-01-11 2013-07-22 Alps Green Devices Co Ltd 電流センサ
WO2013176271A1 (ja) * 2012-05-24 2013-11-28 株式会社フジクラ 電流センサ
JP2013246005A (ja) * 2012-05-24 2013-12-09 Fujikura Ltd 電流センサ
WO2015111408A1 (ja) * 2014-01-23 2015-07-30 株式会社デンソー 電流検出システム
US9190606B2 (en) 2013-03-15 2015-11-17 Allegro Micosystems, LLC Packaging for an electronic device
JP2016173334A (ja) * 2015-03-18 2016-09-29 トヨタ自動車株式会社 電流センサ
WO2017086085A1 (ja) * 2015-11-20 2017-05-26 Tdk株式会社 磁界センサ及びこれを備える磁界検出装置
JP2017116545A (ja) * 2015-12-23 2017-06-29 メレクシス テクノロジーズ エスエー 電流センサを作成する方法および電流センサ
JP2018141634A (ja) * 2017-02-24 2018-09-13 旭化成エレクトロニクス株式会社 電流センサ
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US7709754B2 (en) 2003-08-26 2010-05-04 Allegro Microsystems, Inc. Current sensor
JP2016065882A (ja) * 2003-08-26 2016-04-28 アレグロ・マイクロシステムズ・エルエルシー 電流センサ
JP2011069837A (ja) * 2005-05-27 2011-04-07 Allegro Microsyst Inc 電流センサ
EP1857823A2 (de) 2006-05-16 2007-11-21 Melexis Technologies SA Vorrichtung zur Strommessung
JP2013142604A (ja) * 2012-01-11 2013-07-22 Alps Green Devices Co Ltd 電流センサ
JP2013246005A (ja) * 2012-05-24 2013-12-09 Fujikura Ltd 電流センサ
WO2013176271A1 (ja) * 2012-05-24 2013-11-28 株式会社フジクラ 電流センサ
JPWO2013176271A1 (ja) * 2012-05-24 2016-01-14 株式会社フジクラ 電流センサ
US10753963B2 (en) 2013-03-15 2020-08-25 Allegro Microsystems, Llc Current sensor isolation
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JP2016173334A (ja) * 2015-03-18 2016-09-29 トヨタ自動車株式会社 電流センサ
JP2017096714A (ja) * 2015-11-20 2017-06-01 Tdk株式会社 磁界センサ及びこれを備える磁界検出装置
CN108291947A (zh) * 2015-11-20 2018-07-17 Tdk株式会社 磁场传感器以及具备其的磁场检测装置
WO2017086085A1 (ja) * 2015-11-20 2017-05-26 Tdk株式会社 磁界センサ及びこれを備える磁界検出装置
CN108291947B (zh) * 2015-11-20 2020-10-23 Tdk株式会社 磁场传感器以及具备其的磁场检测装置
JP2017116545A (ja) * 2015-12-23 2017-06-29 メレクシス テクノロジーズ エスエー 電流センサを作成する方法および電流センサ
CN111244265A (zh) * 2015-12-23 2020-06-05 梅莱克塞斯技术股份有限公司 电流传感器制作方法与电流传感器
JP2018141634A (ja) * 2017-02-24 2018-09-13 旭化成エレクトロニクス株式会社 電流センサ
JP2022039744A (ja) * 2020-08-28 2022-03-10 株式会社東芝 電流センサ
US11768230B1 (en) 2022-03-30 2023-09-26 Allegro Microsystems, Llc Current sensor integrated circuit with a dual gauge lead frame

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US20050030018A1 (en) 2005-02-10
KR20050042216A (ko) 2005-05-06
CN1578912A (zh) 2005-02-09
EP1443332B1 (en) 2014-04-16
US7129691B2 (en) 2006-10-31
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EP1443332A4 (en) 2005-09-07
DE02775480T1 (de) 2005-08-18
CN1295514C (zh) 2007-01-17
TW200300211A (en) 2003-05-16
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JPWO2003038452A1 (ja) 2005-02-24
EP1443332A1 (en) 2004-08-04

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