DE102004049252A1 - Temperaturabtastschaltung, Temperatursensor und Periodensteuerschaltung - Google Patents

Temperaturabtastschaltung, Temperatursensor und Periodensteuerschaltung Download PDF

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Publication number
DE102004049252A1
DE102004049252A1 DE102004049252A DE102004049252A DE102004049252A1 DE 102004049252 A1 DE102004049252 A1 DE 102004049252A1 DE 102004049252 A DE102004049252 A DE 102004049252A DE 102004049252 A DE102004049252 A DE 102004049252A DE 102004049252 A1 DE102004049252 A1 DE 102004049252A1
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Prior art keywords
counting
temperature sensing
reset
data
output
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DE102004049252B4 (de
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Myung-Gyoo Won
Jae-Hoon Kim
Jong-Wook Park
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K3/00Thermometers giving results other than momentary value of temperature
    • G01K3/005Circuits arrangements for indicating a predetermined temperature
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Die Erfindung bezieht sich auf eine Temperaturabtastschaltung, einen zugehörigen Temperatursensor und eine zugehörige Periodensteuerschaltung. DOLLAR A Erfindungsgemäß sind ein Abtastsignalgenerator (200), der dafür eingerichtet ist, ein Rücksetzsignal (RESET) und Abtastsignale (PTU) zu erzeugen, ein Temperatursensor (101) zum Ausgeben von Temperaturabtastdaten (OUT), welche in Reaktion auf die Abtastsignale (PTU) erzeugt werden, mit einem Abnahmewiderstandszweig, in welchem ein Strom in Reaktion auf einen Temperaturanstieg abnimmt, und einem Stromspiegel-Differenzverstärker, der mit dem Abnahmewiderstandszweig verbunden ist, und ein Zählerausgabeteil (300) vorgesehen, welcher dafür eingerichtet ist, die Temperaturabtastdaten (OUT) vom Temperatursensor (101) zu zählen und zwischenzuspeichern und Zähldaten (RCQ) auszugeben, wobei der Zählerausgabeteil (300) durch das Rücksetzsignal des Abtastsignalgenerators (200) zurückgesetzt wird. DOLLAR A Verwendung z. B. für Halbleiterspeicherbausteine.
DE102004049252A 2003-10-06 2004-10-06 Temperaturabtastschaltung und Periodensteuerschaltung Expired - Fee Related DE102004049252B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-0069069 2003-10-06
KR1020030069069A KR100541824B1 (ko) 2003-10-06 2003-10-06 반도체 집적회로에 채용하기 적합한 온도감지 회로

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DE102004049252A1 true DE102004049252A1 (de) 2005-05-04
DE102004049252B4 DE102004049252B4 (de) 2007-01-04

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US (1) US7107178B2 (de)
KR (1) KR100541824B1 (de)
DE (1) DE102004049252B4 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006025613B4 (de) * 2005-05-25 2008-08-14 Samsung Electronics Co., Ltd., Suwon Temperatursensor
DE102007046087A1 (de) * 2007-09-26 2009-04-02 Siemens Ag Verfahren zur Vermeidung der Lebensdauerreduktion von leistungselektronischen Bauelementen
DE102007002253B4 (de) * 2006-01-11 2009-04-09 Samsung Electronics Co., Ltd., Suwon Temperatursensor und Temperaturdetektionsverfahren
DE102007002252B4 (de) * 2006-01-11 2009-04-16 Samsung Electronics Co., Ltd., Suwon Temperatursensor und Temperaturbereichsdetektionsverfahren

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10220587B4 (de) * 2002-05-08 2007-07-19 Infineon Technologies Ag Temperatursensor für MOS-Schaltungsanordnung
US7508671B2 (en) * 2003-10-10 2009-03-24 Intel Corporation Computer system having controlled cooling
KR100577560B1 (ko) * 2003-12-23 2006-05-08 삼성전자주식회사 온도감지 데이터에 응답하는 내부회로를 갖는 반도체메모리장치
KR100576480B1 (ko) * 2003-12-26 2006-05-10 주식회사 하이닉스반도체 온도 센서용 오실레이터 회로
WO2005124785A1 (ja) * 2004-06-18 2005-12-29 Fujitsu Limited 半導体装置の温度検出器および半導体記憶装置
KR100618876B1 (ko) * 2004-11-10 2006-09-04 삼성전자주식회사 히스테리시스 특성을 갖는 시퀀셜 트랙킹 온도 센서 및 그온도 센싱 방법
US20060203883A1 (en) * 2005-03-08 2006-09-14 Intel Corporation Temperature sensing
US20060229839A1 (en) * 2005-03-29 2006-10-12 United Memories, Inc. Colorado Springs Temperature sensing and monitoring technique for integrated circuit devices
US7135909B1 (en) * 2005-05-17 2006-11-14 Sigmatel, Inc. Temperature sensor circuit and system
KR100736403B1 (ko) * 2005-08-19 2007-07-09 삼성전자주식회사 온도 검출기, 온도 검출방법, 및 상기 온도 검출기를구비하는 반도체 장치
US7471583B2 (en) * 2005-09-29 2008-12-30 Hynix Semiconductor Inc. Memory device with self refresh cycle control function
US7441949B2 (en) * 2005-12-16 2008-10-28 Micron Technology, Inc. System and method for providing temperature data from a memory device having a temperature sensor
KR100691374B1 (ko) 2006-01-20 2007-03-12 삼성전자주식회사 오프셋 데이터의 제어가 용이한 반도체 장치의 디지털 온도검출회로
US7936203B2 (en) * 2006-02-08 2011-05-03 Micron Technology, Inc. Temperature compensation via power supply modification to produce a temperature-independent delay in an integrated circuit
US7410293B1 (en) * 2006-03-27 2008-08-12 Altera Corporation Techniques for sensing temperature and automatic calibration on integrated circuits
KR100816690B1 (ko) 2006-04-13 2008-03-27 주식회사 하이닉스반도체 온도 감지장치를 구비하는 반도체메모리소자
US8049145B1 (en) 2006-04-19 2011-11-01 Agerson Rall Group, L.L.C. Semiconductor device having variable parameter selection based on temperature and test method
US7383149B1 (en) * 2006-04-19 2008-06-03 Darryl Walker Semiconductor device having variable parameter selection based on temperature and test method
US7484886B2 (en) * 2006-05-03 2009-02-03 International Business Machines Corporation Bolometric on-chip temperature sensor
US7891865B2 (en) * 2006-05-03 2011-02-22 International Business Machines Corporation Structure for bolometric on-chip temperature sensor
KR100807594B1 (ko) * 2006-09-28 2008-02-28 주식회사 하이닉스반도체 온도 정보 출력장치 및 그를 구비하는 반도체소자
KR100832029B1 (ko) * 2006-09-28 2008-05-26 주식회사 하이닉스반도체 온도 정보 출력 장치 및 그를 갖는 반도체 소자
KR100810061B1 (ko) 2006-11-02 2008-03-05 주식회사 하이닉스반도체 반도체 메모리 소자의 온도 정보 출력장치 및 내부온도 측정방법
KR100834403B1 (ko) * 2007-01-03 2008-06-04 주식회사 하이닉스반도체 안정적인 셀프리프레쉬 동작을 수행하는 메모리장치 및셀프리프레쉬주기 제어신호 생성방법
US8125243B1 (en) 2007-03-12 2012-02-28 Cypress Semiconductor Corporation Integrity checking of configurable data of programmable device
US8060661B1 (en) 2007-03-27 2011-11-15 Cypress Semiconductor Corporation Interface circuit and method for programming or communicating with an integrated circuit via a power supply pin
KR100899390B1 (ko) * 2007-06-27 2009-05-27 주식회사 하이닉스반도체 온도 센서 회로 및 그 제어 방법
US7863965B2 (en) * 2007-06-27 2011-01-04 Hynix Semiconductor Inc. Temperature sensor circuit and method for controlling the same
US7746087B2 (en) * 2007-07-13 2010-06-29 Pericom Technology Inc. Heating-control isolation-diode temperature-compensation
WO2009070002A1 (en) * 2007-11-30 2009-06-04 Mimos Berhad Temperature sensor with adjustable temperature coefficient
KR100904739B1 (ko) 2007-12-28 2009-06-26 주식회사 하이닉스반도체 온도코드 전송회로 및 이를 이용한 반도체 메모리 장치
JP5242186B2 (ja) * 2008-02-04 2013-07-24 ルネサスエレクトロニクス株式会社 半導体装置
US7876135B2 (en) * 2008-02-29 2011-01-25 Spectra Linear, Inc. Power-on reset circuit
KR100919814B1 (ko) 2008-04-28 2009-10-01 주식회사 하이닉스반도체 온도코드 출력회로 및 반도체 메모리 장치
US7508250B1 (en) * 2008-07-28 2009-03-24 International Business Machines Corporation Testing for normal or reverse temperature related delay variations in integrated circuits
KR101593603B1 (ko) * 2009-01-29 2016-02-15 삼성전자주식회사 반도체 장치의 온도 감지 회로
JP5498047B2 (ja) * 2009-04-01 2014-05-21 株式会社東芝 半導体集積回路
US9004754B2 (en) * 2009-04-22 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal sensors and methods of operating thereof
GB2506538B (en) 2009-07-28 2014-07-02 Skyworks Solutions Inc Process, voltage and temperature sensor
US8598941B2 (en) * 2011-06-21 2013-12-03 Lsi Corporation Hybrid impedance compensation in a buffer circuit
US9347836B2 (en) * 2011-11-15 2016-05-24 Ati Technologies Ulc Dynamic voltage reference for sampling delta based temperature sensor
US8864377B2 (en) * 2012-03-09 2014-10-21 Hong Kong Applied Science & Technology Research Institute Company Limited CMOS temperature sensor with sensitivity set by current-mirror and resistor ratios without limiting DC bias
KR20140029818A (ko) 2012-08-30 2014-03-11 에스케이하이닉스 주식회사 반도체 장치의 전압 트리밍 회로 및 트리밍 방법
US9336855B2 (en) 2013-05-14 2016-05-10 Qualcomm Incorporated Methods and systems for smart refresh of dynamic random access memory
TWI489093B (zh) * 2013-05-16 2015-06-21 國立成功大學 適用於積體電路晶片之多點溫度感測方法及其系統
KR20150051471A (ko) * 2013-11-04 2015-05-13 에스케이하이닉스 주식회사 반도체 장치 및 그의 구동방법
US9274007B2 (en) * 2014-03-28 2016-03-01 Darryl G. Walker Semiconductor device having temperature sensor circuits
KR102015856B1 (ko) * 2014-07-02 2019-08-29 에스케이하이닉스 주식회사 발진기 및 이를 포함하는 반도체 장치
US9645191B2 (en) 2014-08-20 2017-05-09 Darryl G. Walker Testing and setting performance parameters in a semiconductor device and method therefor
US9613719B1 (en) 2015-02-17 2017-04-04 Darryl G. Walker Multi-chip non-volatile semiconductor memory package including heater and sensor elements
KR20160121204A (ko) * 2015-04-10 2016-10-19 에스케이하이닉스 주식회사 집적 회로
KR101799903B1 (ko) 2016-05-26 2017-11-21 충북대학교 산학협력단 집적회로 시스템에서 온도 검출을 위한 온도 감지 회로
US10761041B2 (en) * 2017-11-21 2020-09-01 Watlow Electric Manufacturing Company Multi-parallel sensor array system
CN110737257A (zh) * 2019-06-12 2020-01-31 武汉卡尔玛汽车电子有限公司 一种基于can可编程的汽车温度传感器电阻信号输出装置
EP3965105B1 (de) 2020-07-17 2024-02-07 Changxin Memory Technologies, Inc. Kalibrierung eines temperaturerkennungsmoduls in einem halbleiterspeicher mit einer vielzahl von speicherchips
EP3968324B1 (de) 2020-07-17 2023-07-05 Changxin Memory Technologies, Inc. Halbleiterbauelement
JP2023517553A (ja) * 2020-07-17 2023-04-26 チャンシン メモリー テクノロジーズ インコーポレイテッド 半導体装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4014238A (en) 1974-08-13 1977-03-29 C.G. Conn, Ltd. Tone signal waveform control network for musical instrument keying system
GB2054997B (en) 1979-05-23 1984-01-18 Suwa Seikosha Kk Temperature detecting circuit
JPS56128433A (en) 1980-03-14 1981-10-07 Seiko Instr & Electronics Ltd Detecting apparatus of temperature
US5025248A (en) 1989-09-01 1991-06-18 Microthermo Automatic temperature monitoring system
US5638418A (en) * 1993-02-05 1997-06-10 Dallas Semiconductor Corporation Temperature detector systems and methods
US5375093A (en) 1992-01-21 1994-12-20 Matsushita Electric Industrial Co., Ltd. Temperature detecting circuit and dynamic random access memory device
JP3186276B2 (ja) * 1992-01-21 2001-07-11 松下電器産業株式会社 温度検知回路およびダイナミック・ランダムアクセス・メモリ装置
KR950010624B1 (ko) * 1993-07-14 1995-09-20 삼성전자주식회사 반도체 메모리장치의 셀프리프레시 주기조절회로
JP2701710B2 (ja) 1993-11-29 1998-01-21 日本電気株式会社 多値電圧源回路
KR0129197B1 (ko) * 1994-04-21 1998-10-01 문정환 메모리셀어레이의 리플레쉬 제어회로
CA2150502A1 (en) 1994-08-05 1996-02-06 Michael F. Mattes Method and apparatus for measuring temperature
KR0123827B1 (ko) * 1994-12-12 1997-11-25 김주용 반도체 소자의 셀프 리프레쉬 주기조절장치
KR0172234B1 (ko) * 1995-03-24 1999-03-30 김주용 셀프 리프레쉬 주기 조절장치
JPH08294229A (ja) * 1995-04-20 1996-11-05 Nec Corp 半導体集積回路装置
DE19640383C1 (de) * 1996-09-30 1998-04-09 Siemens Ag Temperatursensorschaltung
JP3338632B2 (ja) * 1997-05-15 2002-10-28 モトローラ株式会社 温度検出回路
US5875142A (en) 1997-06-17 1999-02-23 Micron Technology, Inc. Integrated circuit with temperature detector
US6056435A (en) 1997-06-24 2000-05-02 Exergen Corporation Ambient and perfusion normalized temperature detector
US5961215A (en) 1997-09-26 1999-10-05 Advanced Micro Devices, Inc. Temperature sensor integral with microprocessor and methods of using same
US6281760B1 (en) 1998-07-23 2001-08-28 Texas Instruments Incorporated On-chip temperature sensor and oscillator for reduced self-refresh current for dynamic random access memory
US6157244A (en) 1998-10-13 2000-12-05 Advanced Micro Devices, Inc. Power supply independent temperature sensor
US6591091B1 (en) * 1998-11-12 2003-07-08 Broadcom Corporation System and method for coarse/fine PLL adjustment
US6316988B1 (en) 1999-03-26 2001-11-13 Seagate Technology Llc Voltage margin testing using an embedded programmable voltage source
DE69933670D1 (de) 1999-08-31 2006-11-30 St Microelectronics Srl Temperaturfühler in Cmos-Technologie
US6316991B1 (en) 2000-03-29 2001-11-13 Cirrus Logic, Inc. Out-of-calibration circuits and methods and systems using the same
US6348832B1 (en) 2000-04-17 2002-02-19 Taiwan Semiconductor Manufacturing Co., Inc. Reference current generator with small temperature dependence
KR100631935B1 (ko) * 2000-06-30 2006-10-04 주식회사 하이닉스반도체 반도체 메모리 장치의 셀프 리프레시 회로
US6320809B1 (en) 2000-07-05 2001-11-20 Micron Technology, Inc. Low voltage level power-up detection circuit
DE10038693C2 (de) * 2000-07-28 2002-10-24 Infineon Technologies Ag Temperatursensor
JP4043703B2 (ja) * 2000-09-04 2008-02-06 株式会社ルネサステクノロジ 半導体装置、マイクロコンピュータ、及びフラッシュメモリ
US6591210B1 (en) 2000-11-21 2003-07-08 National Semiconductor Corporation Circuit and method to combined trim and set point
JP4021643B2 (ja) 2001-10-29 2007-12-12 富士通株式会社 温度検出機能を備えた半導体装置
KR100465629B1 (ko) 2001-12-28 2005-01-13 주식회사 하이닉스반도체 반도체 소자의 온도 특성을 이용한 온도 검출 장치
JP3818197B2 (ja) 2002-03-29 2006-09-06 株式会社デンソー 複数の過熱検出回路を有する回路装置
KR100475736B1 (ko) * 2002-08-09 2005-03-10 삼성전자주식회사 고속 테스트에 적합한 편이온도 검출회로를 갖는온도감지기 및 편이온도 검출방법

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006025613B4 (de) * 2005-05-25 2008-08-14 Samsung Electronics Co., Ltd., Suwon Temperatursensor
DE102007002253B4 (de) * 2006-01-11 2009-04-09 Samsung Electronics Co., Ltd., Suwon Temperatursensor und Temperaturdetektionsverfahren
DE102007002252B4 (de) * 2006-01-11 2009-04-16 Samsung Electronics Co., Ltd., Suwon Temperatursensor und Temperaturbereichsdetektionsverfahren
US7534035B2 (en) 2006-01-11 2009-05-19 Samsung Electronics Co., Ltd. Temperature sensor for generating sectional temperature code and sectional temperature detection method
US7581881B2 (en) 2006-01-11 2009-09-01 Samsung Electronics Co., Ltd. Temperature sensor using ring oscillator and temperature detection method using the same
DE102007046087A1 (de) * 2007-09-26 2009-04-02 Siemens Ag Verfahren zur Vermeidung der Lebensdauerreduktion von leistungselektronischen Bauelementen
DE102007046087B4 (de) * 2007-09-26 2012-02-09 Siemens Ag Verfahren zur Vermeidung der Lebensdauerreduktion von leistungselektronischen Bauelementen

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KR20050033123A (ko) 2005-04-12
US20050074051A1 (en) 2005-04-07
KR100541824B1 (ko) 2006-01-10
US7107178B2 (en) 2006-09-12
DE102004049252B4 (de) 2007-01-04

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