DE102004049252A1 - Temperaturabtastschaltung, Temperatursensor und Periodensteuerschaltung - Google Patents
Temperaturabtastschaltung, Temperatursensor und Periodensteuerschaltung Download PDFInfo
- Publication number
- DE102004049252A1 DE102004049252A1 DE102004049252A DE102004049252A DE102004049252A1 DE 102004049252 A1 DE102004049252 A1 DE 102004049252A1 DE 102004049252 A DE102004049252 A DE 102004049252A DE 102004049252 A DE102004049252 A DE 102004049252A DE 102004049252 A1 DE102004049252 A1 DE 102004049252A1
- Authority
- DE
- Germany
- Prior art keywords
- counting
- temperature sensing
- reset
- data
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000005070 sampling Methods 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K3/00—Thermometers giving results other than momentary value of temperature
- G01K3/005—Circuits arrangements for indicating a predetermined temperature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Die Erfindung bezieht sich auf eine Temperaturabtastschaltung, einen zugehörigen Temperatursensor und eine zugehörige Periodensteuerschaltung. DOLLAR A Erfindungsgemäß sind ein Abtastsignalgenerator (200), der dafür eingerichtet ist, ein Rücksetzsignal (RESET) und Abtastsignale (PTU) zu erzeugen, ein Temperatursensor (101) zum Ausgeben von Temperaturabtastdaten (OUT), welche in Reaktion auf die Abtastsignale (PTU) erzeugt werden, mit einem Abnahmewiderstandszweig, in welchem ein Strom in Reaktion auf einen Temperaturanstieg abnimmt, und einem Stromspiegel-Differenzverstärker, der mit dem Abnahmewiderstandszweig verbunden ist, und ein Zählerausgabeteil (300) vorgesehen, welcher dafür eingerichtet ist, die Temperaturabtastdaten (OUT) vom Temperatursensor (101) zu zählen und zwischenzuspeichern und Zähldaten (RCQ) auszugeben, wobei der Zählerausgabeteil (300) durch das Rücksetzsignal des Abtastsignalgenerators (200) zurückgesetzt wird. DOLLAR A Verwendung z. B. für Halbleiterspeicherbausteine.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0069069 | 2003-10-06 | ||
KR1020030069069A KR100541824B1 (ko) | 2003-10-06 | 2003-10-06 | 반도체 집적회로에 채용하기 적합한 온도감지 회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102004049252A1 true DE102004049252A1 (de) | 2005-05-04 |
DE102004049252B4 DE102004049252B4 (de) | 2007-01-04 |
Family
ID=34386740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102004049252A Expired - Fee Related DE102004049252B4 (de) | 2003-10-06 | 2004-10-06 | Temperaturabtastschaltung und Periodensteuerschaltung |
Country Status (3)
Country | Link |
---|---|
US (1) | US7107178B2 (de) |
KR (1) | KR100541824B1 (de) |
DE (1) | DE102004049252B4 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006025613B4 (de) * | 2005-05-25 | 2008-08-14 | Samsung Electronics Co., Ltd., Suwon | Temperatursensor |
DE102007046087A1 (de) * | 2007-09-26 | 2009-04-02 | Siemens Ag | Verfahren zur Vermeidung der Lebensdauerreduktion von leistungselektronischen Bauelementen |
DE102007002253B4 (de) * | 2006-01-11 | 2009-04-09 | Samsung Electronics Co., Ltd., Suwon | Temperatursensor und Temperaturdetektionsverfahren |
DE102007002252B4 (de) * | 2006-01-11 | 2009-04-16 | Samsung Electronics Co., Ltd., Suwon | Temperatursensor und Temperaturbereichsdetektionsverfahren |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10220587B4 (de) * | 2002-05-08 | 2007-07-19 | Infineon Technologies Ag | Temperatursensor für MOS-Schaltungsanordnung |
US7508671B2 (en) * | 2003-10-10 | 2009-03-24 | Intel Corporation | Computer system having controlled cooling |
KR100577560B1 (ko) * | 2003-12-23 | 2006-05-08 | 삼성전자주식회사 | 온도감지 데이터에 응답하는 내부회로를 갖는 반도체메모리장치 |
KR100576480B1 (ko) * | 2003-12-26 | 2006-05-10 | 주식회사 하이닉스반도체 | 온도 센서용 오실레이터 회로 |
WO2005124785A1 (ja) * | 2004-06-18 | 2005-12-29 | Fujitsu Limited | 半導体装置の温度検出器および半導体記憶装置 |
KR100618876B1 (ko) * | 2004-11-10 | 2006-09-04 | 삼성전자주식회사 | 히스테리시스 특성을 갖는 시퀀셜 트랙킹 온도 센서 및 그온도 센싱 방법 |
US20060203883A1 (en) * | 2005-03-08 | 2006-09-14 | Intel Corporation | Temperature sensing |
US20060229839A1 (en) * | 2005-03-29 | 2006-10-12 | United Memories, Inc. Colorado Springs | Temperature sensing and monitoring technique for integrated circuit devices |
US7135909B1 (en) * | 2005-05-17 | 2006-11-14 | Sigmatel, Inc. | Temperature sensor circuit and system |
KR100736403B1 (ko) * | 2005-08-19 | 2007-07-09 | 삼성전자주식회사 | 온도 검출기, 온도 검출방법, 및 상기 온도 검출기를구비하는 반도체 장치 |
US7471583B2 (en) * | 2005-09-29 | 2008-12-30 | Hynix Semiconductor Inc. | Memory device with self refresh cycle control function |
US7441949B2 (en) * | 2005-12-16 | 2008-10-28 | Micron Technology, Inc. | System and method for providing temperature data from a memory device having a temperature sensor |
KR100691374B1 (ko) | 2006-01-20 | 2007-03-12 | 삼성전자주식회사 | 오프셋 데이터의 제어가 용이한 반도체 장치의 디지털 온도검출회로 |
US7936203B2 (en) * | 2006-02-08 | 2011-05-03 | Micron Technology, Inc. | Temperature compensation via power supply modification to produce a temperature-independent delay in an integrated circuit |
US7410293B1 (en) * | 2006-03-27 | 2008-08-12 | Altera Corporation | Techniques for sensing temperature and automatic calibration on integrated circuits |
KR100816690B1 (ko) | 2006-04-13 | 2008-03-27 | 주식회사 하이닉스반도체 | 온도 감지장치를 구비하는 반도체메모리소자 |
US8049145B1 (en) | 2006-04-19 | 2011-11-01 | Agerson Rall Group, L.L.C. | Semiconductor device having variable parameter selection based on temperature and test method |
US7383149B1 (en) * | 2006-04-19 | 2008-06-03 | Darryl Walker | Semiconductor device having variable parameter selection based on temperature and test method |
US7484886B2 (en) * | 2006-05-03 | 2009-02-03 | International Business Machines Corporation | Bolometric on-chip temperature sensor |
US7891865B2 (en) * | 2006-05-03 | 2011-02-22 | International Business Machines Corporation | Structure for bolometric on-chip temperature sensor |
KR100807594B1 (ko) * | 2006-09-28 | 2008-02-28 | 주식회사 하이닉스반도체 | 온도 정보 출력장치 및 그를 구비하는 반도체소자 |
KR100832029B1 (ko) * | 2006-09-28 | 2008-05-26 | 주식회사 하이닉스반도체 | 온도 정보 출력 장치 및 그를 갖는 반도체 소자 |
KR100810061B1 (ko) | 2006-11-02 | 2008-03-05 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 온도 정보 출력장치 및 내부온도 측정방법 |
KR100834403B1 (ko) * | 2007-01-03 | 2008-06-04 | 주식회사 하이닉스반도체 | 안정적인 셀프리프레쉬 동작을 수행하는 메모리장치 및셀프리프레쉬주기 제어신호 생성방법 |
US8125243B1 (en) | 2007-03-12 | 2012-02-28 | Cypress Semiconductor Corporation | Integrity checking of configurable data of programmable device |
US8060661B1 (en) | 2007-03-27 | 2011-11-15 | Cypress Semiconductor Corporation | Interface circuit and method for programming or communicating with an integrated circuit via a power supply pin |
KR100899390B1 (ko) * | 2007-06-27 | 2009-05-27 | 주식회사 하이닉스반도체 | 온도 센서 회로 및 그 제어 방법 |
US7863965B2 (en) * | 2007-06-27 | 2011-01-04 | Hynix Semiconductor Inc. | Temperature sensor circuit and method for controlling the same |
US7746087B2 (en) * | 2007-07-13 | 2010-06-29 | Pericom Technology Inc. | Heating-control isolation-diode temperature-compensation |
WO2009070002A1 (en) * | 2007-11-30 | 2009-06-04 | Mimos Berhad | Temperature sensor with adjustable temperature coefficient |
KR100904739B1 (ko) | 2007-12-28 | 2009-06-26 | 주식회사 하이닉스반도체 | 온도코드 전송회로 및 이를 이용한 반도체 메모리 장치 |
JP5242186B2 (ja) * | 2008-02-04 | 2013-07-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7876135B2 (en) * | 2008-02-29 | 2011-01-25 | Spectra Linear, Inc. | Power-on reset circuit |
KR100919814B1 (ko) | 2008-04-28 | 2009-10-01 | 주식회사 하이닉스반도체 | 온도코드 출력회로 및 반도체 메모리 장치 |
US7508250B1 (en) * | 2008-07-28 | 2009-03-24 | International Business Machines Corporation | Testing for normal or reverse temperature related delay variations in integrated circuits |
KR101593603B1 (ko) * | 2009-01-29 | 2016-02-15 | 삼성전자주식회사 | 반도체 장치의 온도 감지 회로 |
JP5498047B2 (ja) * | 2009-04-01 | 2014-05-21 | 株式会社東芝 | 半導体集積回路 |
US9004754B2 (en) * | 2009-04-22 | 2015-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal sensors and methods of operating thereof |
GB2506538B (en) | 2009-07-28 | 2014-07-02 | Skyworks Solutions Inc | Process, voltage and temperature sensor |
US8598941B2 (en) * | 2011-06-21 | 2013-12-03 | Lsi Corporation | Hybrid impedance compensation in a buffer circuit |
US9347836B2 (en) * | 2011-11-15 | 2016-05-24 | Ati Technologies Ulc | Dynamic voltage reference for sampling delta based temperature sensor |
US8864377B2 (en) * | 2012-03-09 | 2014-10-21 | Hong Kong Applied Science & Technology Research Institute Company Limited | CMOS temperature sensor with sensitivity set by current-mirror and resistor ratios without limiting DC bias |
KR20140029818A (ko) | 2012-08-30 | 2014-03-11 | 에스케이하이닉스 주식회사 | 반도체 장치의 전압 트리밍 회로 및 트리밍 방법 |
US9336855B2 (en) | 2013-05-14 | 2016-05-10 | Qualcomm Incorporated | Methods and systems for smart refresh of dynamic random access memory |
TWI489093B (zh) * | 2013-05-16 | 2015-06-21 | 國立成功大學 | 適用於積體電路晶片之多點溫度感測方法及其系統 |
KR20150051471A (ko) * | 2013-11-04 | 2015-05-13 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그의 구동방법 |
US9274007B2 (en) * | 2014-03-28 | 2016-03-01 | Darryl G. Walker | Semiconductor device having temperature sensor circuits |
KR102015856B1 (ko) * | 2014-07-02 | 2019-08-29 | 에스케이하이닉스 주식회사 | 발진기 및 이를 포함하는 반도체 장치 |
US9645191B2 (en) | 2014-08-20 | 2017-05-09 | Darryl G. Walker | Testing and setting performance parameters in a semiconductor device and method therefor |
US9613719B1 (en) | 2015-02-17 | 2017-04-04 | Darryl G. Walker | Multi-chip non-volatile semiconductor memory package including heater and sensor elements |
KR20160121204A (ko) * | 2015-04-10 | 2016-10-19 | 에스케이하이닉스 주식회사 | 집적 회로 |
KR101799903B1 (ko) | 2016-05-26 | 2017-11-21 | 충북대학교 산학협력단 | 집적회로 시스템에서 온도 검출을 위한 온도 감지 회로 |
US10761041B2 (en) * | 2017-11-21 | 2020-09-01 | Watlow Electric Manufacturing Company | Multi-parallel sensor array system |
CN110737257A (zh) * | 2019-06-12 | 2020-01-31 | 武汉卡尔玛汽车电子有限公司 | 一种基于can可编程的汽车温度传感器电阻信号输出装置 |
EP3965105B1 (de) | 2020-07-17 | 2024-02-07 | Changxin Memory Technologies, Inc. | Kalibrierung eines temperaturerkennungsmoduls in einem halbleiterspeicher mit einer vielzahl von speicherchips |
EP3968324B1 (de) | 2020-07-17 | 2023-07-05 | Changxin Memory Technologies, Inc. | Halbleiterbauelement |
JP2023517553A (ja) * | 2020-07-17 | 2023-04-26 | チャンシン メモリー テクノロジーズ インコーポレイテッド | 半導体装置 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4014238A (en) | 1974-08-13 | 1977-03-29 | C.G. Conn, Ltd. | Tone signal waveform control network for musical instrument keying system |
GB2054997B (en) | 1979-05-23 | 1984-01-18 | Suwa Seikosha Kk | Temperature detecting circuit |
JPS56128433A (en) | 1980-03-14 | 1981-10-07 | Seiko Instr & Electronics Ltd | Detecting apparatus of temperature |
US5025248A (en) | 1989-09-01 | 1991-06-18 | Microthermo | Automatic temperature monitoring system |
US5638418A (en) * | 1993-02-05 | 1997-06-10 | Dallas Semiconductor Corporation | Temperature detector systems and methods |
US5375093A (en) | 1992-01-21 | 1994-12-20 | Matsushita Electric Industrial Co., Ltd. | Temperature detecting circuit and dynamic random access memory device |
JP3186276B2 (ja) * | 1992-01-21 | 2001-07-11 | 松下電器産業株式会社 | 温度検知回路およびダイナミック・ランダムアクセス・メモリ装置 |
KR950010624B1 (ko) * | 1993-07-14 | 1995-09-20 | 삼성전자주식회사 | 반도체 메모리장치의 셀프리프레시 주기조절회로 |
JP2701710B2 (ja) | 1993-11-29 | 1998-01-21 | 日本電気株式会社 | 多値電圧源回路 |
KR0129197B1 (ko) * | 1994-04-21 | 1998-10-01 | 문정환 | 메모리셀어레이의 리플레쉬 제어회로 |
CA2150502A1 (en) | 1994-08-05 | 1996-02-06 | Michael F. Mattes | Method and apparatus for measuring temperature |
KR0123827B1 (ko) * | 1994-12-12 | 1997-11-25 | 김주용 | 반도체 소자의 셀프 리프레쉬 주기조절장치 |
KR0172234B1 (ko) * | 1995-03-24 | 1999-03-30 | 김주용 | 셀프 리프레쉬 주기 조절장치 |
JPH08294229A (ja) * | 1995-04-20 | 1996-11-05 | Nec Corp | 半導体集積回路装置 |
DE19640383C1 (de) * | 1996-09-30 | 1998-04-09 | Siemens Ag | Temperatursensorschaltung |
JP3338632B2 (ja) * | 1997-05-15 | 2002-10-28 | モトローラ株式会社 | 温度検出回路 |
US5875142A (en) | 1997-06-17 | 1999-02-23 | Micron Technology, Inc. | Integrated circuit with temperature detector |
US6056435A (en) | 1997-06-24 | 2000-05-02 | Exergen Corporation | Ambient and perfusion normalized temperature detector |
US5961215A (en) | 1997-09-26 | 1999-10-05 | Advanced Micro Devices, Inc. | Temperature sensor integral with microprocessor and methods of using same |
US6281760B1 (en) | 1998-07-23 | 2001-08-28 | Texas Instruments Incorporated | On-chip temperature sensor and oscillator for reduced self-refresh current for dynamic random access memory |
US6157244A (en) | 1998-10-13 | 2000-12-05 | Advanced Micro Devices, Inc. | Power supply independent temperature sensor |
US6591091B1 (en) * | 1998-11-12 | 2003-07-08 | Broadcom Corporation | System and method for coarse/fine PLL adjustment |
US6316988B1 (en) | 1999-03-26 | 2001-11-13 | Seagate Technology Llc | Voltage margin testing using an embedded programmable voltage source |
DE69933670D1 (de) | 1999-08-31 | 2006-11-30 | St Microelectronics Srl | Temperaturfühler in Cmos-Technologie |
US6316991B1 (en) | 2000-03-29 | 2001-11-13 | Cirrus Logic, Inc. | Out-of-calibration circuits and methods and systems using the same |
US6348832B1 (en) | 2000-04-17 | 2002-02-19 | Taiwan Semiconductor Manufacturing Co., Inc. | Reference current generator with small temperature dependence |
KR100631935B1 (ko) * | 2000-06-30 | 2006-10-04 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 셀프 리프레시 회로 |
US6320809B1 (en) | 2000-07-05 | 2001-11-20 | Micron Technology, Inc. | Low voltage level power-up detection circuit |
DE10038693C2 (de) * | 2000-07-28 | 2002-10-24 | Infineon Technologies Ag | Temperatursensor |
JP4043703B2 (ja) * | 2000-09-04 | 2008-02-06 | 株式会社ルネサステクノロジ | 半導体装置、マイクロコンピュータ、及びフラッシュメモリ |
US6591210B1 (en) | 2000-11-21 | 2003-07-08 | National Semiconductor Corporation | Circuit and method to combined trim and set point |
JP4021643B2 (ja) | 2001-10-29 | 2007-12-12 | 富士通株式会社 | 温度検出機能を備えた半導体装置 |
KR100465629B1 (ko) | 2001-12-28 | 2005-01-13 | 주식회사 하이닉스반도체 | 반도체 소자의 온도 특성을 이용한 온도 검출 장치 |
JP3818197B2 (ja) | 2002-03-29 | 2006-09-06 | 株式会社デンソー | 複数の過熱検出回路を有する回路装置 |
KR100475736B1 (ko) * | 2002-08-09 | 2005-03-10 | 삼성전자주식회사 | 고속 테스트에 적합한 편이온도 검출회로를 갖는온도감지기 및 편이온도 검출방법 |
-
2003
- 2003-10-06 KR KR1020030069069A patent/KR100541824B1/ko not_active IP Right Cessation
-
2004
- 2004-09-17 US US10/942,776 patent/US7107178B2/en not_active Expired - Fee Related
- 2004-10-06 DE DE102004049252A patent/DE102004049252B4/de not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006025613B4 (de) * | 2005-05-25 | 2008-08-14 | Samsung Electronics Co., Ltd., Suwon | Temperatursensor |
DE102007002253B4 (de) * | 2006-01-11 | 2009-04-09 | Samsung Electronics Co., Ltd., Suwon | Temperatursensor und Temperaturdetektionsverfahren |
DE102007002252B4 (de) * | 2006-01-11 | 2009-04-16 | Samsung Electronics Co., Ltd., Suwon | Temperatursensor und Temperaturbereichsdetektionsverfahren |
US7534035B2 (en) | 2006-01-11 | 2009-05-19 | Samsung Electronics Co., Ltd. | Temperature sensor for generating sectional temperature code and sectional temperature detection method |
US7581881B2 (en) | 2006-01-11 | 2009-09-01 | Samsung Electronics Co., Ltd. | Temperature sensor using ring oscillator and temperature detection method using the same |
DE102007046087A1 (de) * | 2007-09-26 | 2009-04-02 | Siemens Ag | Verfahren zur Vermeidung der Lebensdauerreduktion von leistungselektronischen Bauelementen |
DE102007046087B4 (de) * | 2007-09-26 | 2012-02-09 | Siemens Ag | Verfahren zur Vermeidung der Lebensdauerreduktion von leistungselektronischen Bauelementen |
Also Published As
Publication number | Publication date |
---|---|
KR20050033123A (ko) | 2005-04-12 |
US20050074051A1 (en) | 2005-04-07 |
KR100541824B1 (ko) | 2006-01-10 |
US7107178B2 (en) | 2006-09-12 |
DE102004049252B4 (de) | 2007-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102004049252A1 (de) | Temperaturabtastschaltung, Temperatursensor und Periodensteuerschaltung | |
JP2005514611A5 (de) | ||
TW200515610A (en) | Infrared sensing IC, infrared sensor and method for producing the same | |
EP1571425B8 (de) | Magnetostriktiver Streckensensor | |
WO2003038452A1 (fr) | Capteur de courant et procede de fabrication associe | |
WO2006044960A3 (en) | Position detection apparatus and method for linear and rotary sensing applications | |
CN106354187B (zh) | 感测电路及感测电路的控制方法 | |
DE602004028946D1 (de) | S für einen ausgangstreiber | |
CN109714054A (zh) | 恒流源电路及具有恒流源电路的三元离散i/f模数转换电路 | |
ATE426794T1 (de) | Magnetischer wegsensor | |
CN110132428A (zh) | Mems传感器热学参数测试电路及测试方法 | |
CN108759957A (zh) | 一种基于无磁技术的燃气计量装置 | |
Fasoli et al. | A general circuit for resistive bridge sensors with bitstream output | |
EP1349278A3 (de) | Einschalt-Rücksetzschaltung | |
TWI288878B (en) | Position tracking sensor of optical mouse and method of controlling the same | |
CN103217570B (zh) | Tmr自温补数字电流传感器 | |
ATE425522T1 (de) | Sensorvorrichtung für die erfassung eines physikalischen parameters | |
WO2006044229A3 (en) | System and method for process measurement | |
JPS6468662A (en) | Temperature compensating circuit for accelerometer | |
WO2004029558A3 (en) | Flow pickup circuit | |
CN205483302U (zh) | 低功耗温度传感系统 | |
CN105486423A (zh) | 多路igbt内部ntc高温实时检测电路 | |
JP2002111472A5 (de) | ||
ATE433096T1 (de) | Elektronische messschaltung | |
JP3458735B2 (ja) | 赤外線検出装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8364 | No opposition during term of opposition | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20140501 |