WO2003021658A1 - Procede et appareil destines au traitement d'un revetement d'organosiloxane - Google Patents
Procede et appareil destines au traitement d'un revetement d'organosiloxane Download PDFInfo
- Publication number
- WO2003021658A1 WO2003021658A1 PCT/JP2002/008756 JP0208756W WO03021658A1 WO 2003021658 A1 WO2003021658 A1 WO 2003021658A1 JP 0208756 W JP0208756 W JP 0208756W WO 03021658 A1 WO03021658 A1 WO 03021658A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- treating
- coating
- substrate
- heat treatment
- reaction vessel
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020047003169A KR100881806B1 (ko) | 2001-09-03 | 2002-08-29 | 유기실록산막의 처리 방법 및 장치 |
US10/487,935 US20040231777A1 (en) | 2001-09-03 | 2002-08-29 | Method and apparatus for treating organosiloxane coating |
EP02762905A EP1429376A4 (en) | 2001-09-03 | 2002-08-29 | METHOD AND APPARATUS FOR TREATING AN ORGANOSILOXANE COATING |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001266019 | 2001-09-03 | ||
JP2001-266019 | 2001-09-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003021658A1 true WO2003021658A1 (fr) | 2003-03-13 |
Family
ID=19092398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/008756 WO2003021658A1 (fr) | 2001-09-03 | 2002-08-29 | Procede et appareil destines au traitement d'un revetement d'organosiloxane |
Country Status (7)
Country | Link |
---|---|
US (1) | US20040231777A1 (ja) |
EP (1) | EP1429376A4 (ja) |
JP (1) | JP3913638B2 (ja) |
KR (1) | KR100881806B1 (ja) |
CN (1) | CN1276480C (ja) |
TW (1) | TW569341B (ja) |
WO (1) | WO2003021658A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004097921A1 (ja) * | 2003-04-25 | 2004-11-11 | Tokyo Electron Limited | オルガノシロキサン膜を処理する方法及び装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4130380B2 (ja) | 2003-04-25 | 2008-08-06 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
KR100856953B1 (ko) * | 2004-06-21 | 2008-09-04 | 히다치 가세고교 가부시끼가이샤 | 유기 실록산막, 그것을 이용한 반도체장치, 및,평면표시장치, 및, 원료액 |
JP4455225B2 (ja) * | 2004-08-25 | 2010-04-21 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5299605B2 (ja) * | 2007-11-19 | 2013-09-25 | 日揮触媒化成株式会社 | 低誘電率シリカ系被膜のダメージ修復方法および該方法により修復された低誘電率シリカ系被膜 |
US8821739B2 (en) * | 2012-07-12 | 2014-09-02 | Rohm And Haas Electronic Materials Llc | High temperature thermal annealing process |
US8821738B2 (en) * | 2012-07-12 | 2014-09-02 | Rohm And Haas Electronic Materials Llc | Thermal annealing process |
JP6849083B2 (ja) * | 2017-09-11 | 2021-03-24 | 東京エレクトロン株式会社 | 絶縁膜の成膜方法、基板処理装置及び基板処理システム |
JP7110090B2 (ja) * | 2018-12-28 | 2022-08-01 | 東京エレクトロン株式会社 | 基板処理方法および基板処理システム |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0461782A2 (en) * | 1990-06-04 | 1991-12-18 | Dow Corning Corporation | Conversion of silica precursors to silica at low temperatures |
EP0643025A1 (en) * | 1993-09-13 | 1995-03-15 | Dow Corning Corporation | Method of forming Si-O containing coatings |
EP0647965A1 (en) * | 1993-09-22 | 1995-04-12 | Dow Corning Corporation | Method of forming Si-O containing coatings |
EP0677872A1 (en) * | 1994-04-11 | 1995-10-18 | Dow Corning Corporation | Method of forming Si-O containing coatings |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5635250A (en) * | 1985-04-26 | 1997-06-03 | Sri International | Hydridosiloxanes as precursors to ceramic products |
US5336532A (en) * | 1989-02-21 | 1994-08-09 | Dow Corning Corporation | Low temperature process for the formation of ceramic coatings |
US5318857A (en) * | 1989-11-06 | 1994-06-07 | Dow Corning Corporation | Low temperature ozonolysis of silicon and ceramic oxide precursor polymers to ceramic coatings |
US5145723A (en) * | 1991-06-05 | 1992-09-08 | Dow Corning Corporation | Process for coating a substrate with silica |
EP0586149A1 (en) * | 1992-08-31 | 1994-03-09 | Dow Corning Corporation | Hermetic protection for integrated circuits, based on a ceramic layer |
WO1997010282A1 (en) * | 1995-09-12 | 1997-03-20 | Gelest, Inc. | Beta-substituted organosilsesquioxanes and use thereof |
US6156674A (en) * | 1998-11-25 | 2000-12-05 | Micron Technology, Inc. | Semiconductor processing methods of forming insulative materials |
JP3615979B2 (ja) * | 2000-01-18 | 2005-02-02 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
JP3934343B2 (ja) * | 2000-07-12 | 2007-06-20 | キヤノンマーケティングジャパン株式会社 | 半導体装置及びその製造方法 |
US6572923B2 (en) * | 2001-01-12 | 2003-06-03 | The Boc Group, Inc. | Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film |
-
2002
- 2002-08-21 JP JP2002240365A patent/JP3913638B2/ja not_active Expired - Fee Related
- 2002-08-29 EP EP02762905A patent/EP1429376A4/en not_active Withdrawn
- 2002-08-29 US US10/487,935 patent/US20040231777A1/en not_active Abandoned
- 2002-08-29 KR KR1020047003169A patent/KR100881806B1/ko not_active IP Right Cessation
- 2002-08-29 CN CNB02817271XA patent/CN1276480C/zh not_active Expired - Fee Related
- 2002-08-29 WO PCT/JP2002/008756 patent/WO2003021658A1/ja active Application Filing
- 2002-08-30 TW TW091119861A patent/TW569341B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0461782A2 (en) * | 1990-06-04 | 1991-12-18 | Dow Corning Corporation | Conversion of silica precursors to silica at low temperatures |
EP0643025A1 (en) * | 1993-09-13 | 1995-03-15 | Dow Corning Corporation | Method of forming Si-O containing coatings |
EP0647965A1 (en) * | 1993-09-22 | 1995-04-12 | Dow Corning Corporation | Method of forming Si-O containing coatings |
EP0677872A1 (en) * | 1994-04-11 | 1995-10-18 | Dow Corning Corporation | Method of forming Si-O containing coatings |
Non-Patent Citations (1)
Title |
---|
See also references of EP1429376A4 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004097921A1 (ja) * | 2003-04-25 | 2004-11-11 | Tokyo Electron Limited | オルガノシロキサン膜を処理する方法及び装置 |
US7259026B2 (en) | 2003-04-25 | 2007-08-21 | Tokyo Electron Limited | Method and apparatus for processing organosiloxane film |
Also Published As
Publication number | Publication date |
---|---|
JP2003158126A (ja) | 2003-05-30 |
TW569341B (en) | 2004-01-01 |
EP1429376A4 (en) | 2010-02-24 |
CN1276480C (zh) | 2006-09-20 |
EP1429376A1 (en) | 2004-06-16 |
KR20040031036A (ko) | 2004-04-09 |
US20040231777A1 (en) | 2004-11-25 |
CN1552094A (zh) | 2004-12-01 |
KR100881806B1 (ko) | 2009-02-03 |
JP3913638B2 (ja) | 2007-05-09 |
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