WO2002049086A1 - Dispositif de traitement de substrat de transfert - Google Patents

Dispositif de traitement de substrat de transfert Download PDF

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Publication number
WO2002049086A1
WO2002049086A1 PCT/JP2001/010765 JP0110765W WO0249086A1 WO 2002049086 A1 WO2002049086 A1 WO 2002049086A1 JP 0110765 W JP0110765 W JP 0110765W WO 0249086 A1 WO0249086 A1 WO 0249086A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
processing
etching
transport
liquid
Prior art date
Application number
PCT/JP2001/010765
Other languages
English (en)
Japanese (ja)
Other versions
WO2002049086B1 (fr
Inventor
Kyoji Shimoda
Hitoshi Tauchi
Original Assignee
Sumitomo Precision Products Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co., Ltd filed Critical Sumitomo Precision Products Co., Ltd
Priority to KR1020027010303A priority Critical patent/KR20020084121A/ko
Publication of WO2002049086A1 publication Critical patent/WO2002049086A1/fr
Publication of WO2002049086B1 publication Critical patent/WO2002049086B1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/14—Wafer cassette transporting

Definitions

  • the present invention relates to a transfer type substrate processing apparatus used for manufacturing a glass substrate for a liquid crystal display device and the like.
  • the glass substrate used for the liquid crystal display device is the material of the glass substrate
  • the processing equipment is roughly divided into dry type and batch type, and the batch type is further divided into batch type and single wafer type. Furthermore, the single wafer type is subdivided into a rotary type and a transport type by roller transport or the like.
  • the transport type has a basic configuration in which a processing liquid is supplied to the surface of the substrate while the substrate is transported in a horizontal direction.
  • ⁇ Used for separation processing ⁇
  • a transfer type substrate processing apparatus used for the etching process an etching solution is sprayed from a large number of spray nozzles arranged in a matrix above the substrate transfer line, and the substrate is passed through the etching solution.
  • An etchant is supplied to the entire surface of the substrate.
  • the surface of the substrate is selectively etched except for the portion where the masking material is applied.
  • a cleaning process using a shower is performed.
  • etching solution for A1 a solution containing phosphoric acid as a main component is used.
  • the etching rate of A1 by this etching solution is higher than the etching rate of Cr by etching for Cr, and thereby high etching efficiency can be obtained.
  • the side edge surface of the A1 layer after etching is obtained.
  • FIG. 3 is a sectional view showing the shape of the A1 layer after etching.
  • An A1 layer 2 and a Mo layer 3 are formed on a glass substrate 1 which is a material, and a masking material 4 is coated thereon.
  • the etching removes the A1 layer 2 and the Mo layer 3 in the area where the masking material 4 is not covered, but the remaining side edge surfaces of the A1 layer 2 and the Mo layer 3 are indicated by solid lines.
  • the slope becomes steep.
  • the next layer cannot be stably placed on the A1 layer 2 and the M0 layer 3.
  • the etching solution for A1 has a higher viscosity than the etching for Cr and has poor wettability to the surface of the glass substrate 4. Further, as described above, the etching rate is high. For these reasons, at the start of the shower processing, fine droplets of the etching liquid collide with each other, resulting in partial force processing unevenness, and remain after etching without disappearing even in the subsequent shower processing.
  • the object of the present invention is to apply A1 etching to the side edge of A1 layer.
  • the present invention provides a transport-type substrate processing apparatus capable of forming a surface on a gentle slope suitable for laminating the next layer, and also eliminating processing unevenness caused by initial shearing.
  • a transport-type substrate processing apparatus of the present invention supplies a processing liquid to the entire surface of a substrate from a number of spray nozzles arranged in a transport direction of the substrate and a direction perpendicular to the transport direction.
  • a first processing section of a shearing type, and a chemical knife method of supplying a processing liquid in a film form over the entire width direction of the substrate surface from slit nozzles arranged in one or more stages downstream of the first processing section.
  • a slit nozzle that performs chemical knife processing prior to shower processing is provided at the entrance of the first processing section, and before the shower processing, the substrate is passed through the falling film of the processing liquid, so that the surface of the substrate is removed. Wet evenly. Once wet, the droplets will not be treated even if subjected to shower treatment. Therefore, by providing a slit nozzle at the entrance of the first processing unit, processing unevenness caused by the initial shower is also eliminated.
  • the paddle processing is performed almost entirely from the inlet of the processing section by the processing liquid.
  • the slit nozzles for supplying the processing liquid can be arranged in one or more stages in the substrate transport direction. That is, it is possible to omit the shower type first processing unit and perform processing with the processing liquid only by the chemical knife type second processing unit. Thereby, although the etching rate is lowered, the steep rise of the side edge surface is effectively prevented.
  • the transport type substrate processing apparatus of the present invention is particularly suitable for A1 etching, it is also effective for other etching processes, although the degree of effect varies.
  • FIG. 1 is a plan view of a transfer type substrate processing apparatus showing one embodiment of the present invention
  • FIG. 2 is a side view of a main part of the substrate processing apparatus
  • FIG. 3 is a cross-sectional view showing the shape of the A1 layer after etching.
  • the transport-type substrate processing apparatus performs an A1 etching process on a glass substrate 100 for a liquid crystal display device (hereinafter simply referred to as a substrate 100).
  • this substrate processing apparatus has a linear first line A, a second line B connected at a right angle to the first line A, and a first line A connected at a right angle to the second line B. It adopts a U-style layout that combines a third line C that is in parallel with the other.
  • the first line A is configured by linearly connecting the receiving part 10, the liquid shielding part 20, and the etching part 30.
  • the second line B is a washing section 40, which is equipped with a shower unit 41 for spraying washing water on the surface of the substrate 100.
  • the third line C is configured by connecting a transfer device 50, a spin dryer 60, a transfer device 70, and a take-out unit 80 in a straight line.
  • the first line A and the second line B are provided with a large number of transport rollers arranged at predetermined intervals in the transport direction in order to transport the substrate 100 in the longitudinal direction of the line. Each transport roller is a horizontal roll perpendicular to the transport direction.
  • a turning mechanism 42 for changing the traveling direction of the substrate 10G by 90 degrees is provided at the second line B, that is, at the entrance of the washing section 40.
  • the substrate 100 subjected to the etching process is carried into the receiving unit 10 by the transfer device 90.
  • the substrate 100 enters the etching portion 30 from the liquid dispensing portion 20 by the roller transport, and undergoes an etching process while passing therethrough.
  • the substrate 100 that has passed through the etching section 30 continues to enter the washing section 40 by roller transport, changes the traveling direction by 90 degrees, moves through the washing section 40, and during the movement, rinses. Receive processing.
  • the substrate 100 that has moved to the outlet of the washing unit 40 is transferred from the washing unit 40 to the spin dryer 60 by the transfer device 50.
  • the substrate 100 that has been dried by the spin dryer 60 is transported from the spin dryer 60 to the take-out unit 80 by the transfer device 70, and is further transported out of the device by the transport device 90.
  • the etching section 30 has a particularly significant feature.
  • the etching unit 300 includes a transport roller 31 for transporting the substrate 100 in a horizontal direction. Above the transport line for the substrate 100, the surface of the substrate 100 is provided.
  • the first slit nozzle 33, the shower unit 34, and the second slit nozzle 35 are provided in order along the traveling direction of the substrate 10 in order to supply an etching solution to the substrate 10.
  • the transport roller 31 supports the substrate 100 at points by large-diameter portions 31b provided at a plurality of positions in the axial direction of the drive shaft 31a, and supports the substrate 100 by flanges 31c provided on both sides. Performs positioning in the width direction of 0.
  • the first slit nozzle 33 is a horizontal nozzle perpendicular to the direction of travel of the substrate 100.
  • the etching liquid for A1 down in the form of a film By flowing the etching liquid for A1 down in the form of a film, the etching liquid is supplied linearly over the entire width in a part of the surface of the substrate 10 in the traveling direction.
  • the shower unit 34 constitutes a shower type first processing unit.
  • the shower unit 34 has a large number of spray nozzles arranged in a matrix (including a staggered shape) at predetermined intervals in a horizontal direction parallel to the traveling direction of the substrate 100 and in a horizontal direction perpendicular to the traveling direction. It is equipped with 34a and sprays the etching solution for A1 over a wider area than the surface of the substrate 10.
  • a large number of spray nozzles 34 a are arranged in parallel in a direction perpendicular to the direction of travel of the substrate 100, and each spray nozzle 34 a extends downward to a plurality of header tubes 34 b extending in the direction of travel of the substrate 100.
  • Mounted for Each of the spray nozzles 34a jets the etching liquid for A1 into fine droplets in a conical shape, and the jetting range of each nozzle overlaps between adjacent nozzles.
  • the supply amount of the etching liquid is set so that sufficient liquid replacement is performed on the surface of the substrate 100.
  • the second slit nozzle 35 is a horizontal nozzle, similar to the first slit nozzle 33, perpendicular to the traveling direction of the substrate 100, and a plurality of nozzles are arranged at predetermined intervals in the traveling direction of the substrate 100.
  • each of the slit nozzles 35 causes a small amount of the etching solution for A1 to flow down in a film shape perpendicular to the direction in which the substrate 100 is conveyed. It is fed linearly over the entire width in a part of the surface of the surface in the traveling direction of 10 and stays. That is, the supply amount of the etching liquid is set to such an extent that the etching liquid supplied to the surface of the substrate 10 is held on the surface by the surface tension.
  • Reference numeral 36 denotes a slit-type air nozzle disposed further behind the second slit nozzle 35 at the last stage, and has a full width in a part of the surface of the substrate 10 in the traveling direction.
  • the etching liquid is removed from the surface by blowing air linearly over the entire surface.
  • the substrate 100 that has entered the etching section 30 from the liquid blocking section 20 firstly flows down from the first slit nozzle 33.
  • the etchant passes through the film of the etchant for 1 and is supplied to the surface sequentially from the tip.
  • it passes through the etching solution for A1 sprayed from the shower unit 34, and the etching solution for A1 is supplied to the entire surface of the substrate 100 to perform a predetermined etching.
  • the part where the liquid droplets are first received remains as processing unevenness. Since the etching liquid is supplied evenly on the top, processing unevenness accompanying the shower processing of the etching liquid is prevented.
  • the A 1 layer or the A 1 / Mo layer formed on the surface of the substrate 100 is selectively etched by a shower process using an etching solution for A 1.
  • a steep slope that is unsuitable for laminating the remaining A 1 layer or A 1 ZMo layer.
  • the A1 etching liquid flowing down in a film form from the second slit nozzle 35 is supplied to the surface of the substrate 100, and is held in a paddle state on the surface.
  • the etching process progresses slowly, and the remaining side edge surface of the A1 layer or A1ZMo layer has a gentle slope suitable for lamination of the next layer, as shown by the dashed line in Fig. 3. Face.
  • the second stage of the first processing unit composed of the shower unit 34 is replaced with a paddle processing unit. Things. Pa
  • the dollar processing time is preferably from 10 to 45%, more preferably from 20 to 40% of the total processing time with the etching solution. If the paddle processing time is too short, the inclination of the side edge surface will not be sufficiently relaxed, but if it is too long, the effect will be adverse, and there will be problems with reduction in processing efficiency and unnecessary consumption of liquid.
  • the substrate 100 can be reciprocated to secure a processing time.
  • the etching unit 30 is a combined processing unit combining the first slit nozzle 33, the shack unit 34 and the second slit nozzle 35, but the first slit nozzle 33 and the As described above, it is possible to omit the shower unit 34 and perform paddle processing using the second slit nozzle 35 almost over the entire area from the entrance of the etching section 30.
  • the transport-type substrate processing apparatus of the present invention is configured by a slit nozzle that supplies a processing liquid in a film form over the entire width direction of the substrate surface downstream of the first processing unit of the shower type.
  • a slit nozzle for performing a chemical knife process prior to the shower process is provided at the entrance of the first processing unit, and the substrate is passed through the falling film of the processing solution before the shower process, thereby reducing the size of the substrate. Processing unevenness due to the processing can be prevented.
  • one or more slit nozzles that supply the processing liquid in a film form across the entire width of the substrate surface in the substrate transport direction are provided.
  • a The steep rise of the side edge surface of the A1 layer which is a problem in one etching, can be changed to a gentle slope suitable for laminating the next layer.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Nozzles (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

La présente invention concerne un dispositif de traitement de substrat de transfert capable de transformer la surface du rebord latéral d'une couche d'aluminium en une surface doucement inclinée convenant aux couches laminées d'une couche suivante en s'adaptant à une attaque chimique de l'aluminium. Ce dispositif comprend une ou plusieurs rangées de gicleurs à jet laminaire (35) déversant latéralement en nappe le fluide de traitement sur la totalité de la surface du substrat en aval du système d'arrosage en déluge (34). De la sorte, un grand nombre de gicleurs d'arrosage (34a) permettent de déverser le fluide de traitement sur la totalité de la surface du substrat (100). Cela permet d'obtenir un effet de spatule faisant que le fluide de traitement se dépose en film fin sur la surface du substrat (100), dans le cas d'un traitement au couteau chimique par utilisation de gicleurs à jet laminaire (35).
PCT/JP2001/010765 2000-12-11 2001-12-07 Dispositif de traitement de substrat de transfert WO2002049086A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020027010303A KR20020084121A (ko) 2000-12-11 2001-12-07 반송식 기판 처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000375993A JP3622842B2 (ja) 2000-12-11 2000-12-11 搬送式基板処理装置
JP2000-375993 2000-12-11

Publications (2)

Publication Number Publication Date
WO2002049086A1 true WO2002049086A1 (fr) 2002-06-20
WO2002049086B1 WO2002049086B1 (fr) 2002-08-29

Family

ID=18844917

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/010765 WO2002049086A1 (fr) 2000-12-11 2001-12-07 Dispositif de traitement de substrat de transfert

Country Status (5)

Country Link
JP (1) JP3622842B2 (fr)
KR (1) KR20020084121A (fr)
CN (1) CN1208813C (fr)
TW (1) TW535195B (fr)
WO (1) WO2002049086A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110113883A (zh) * 2019-05-10 2019-08-09 无锡睿龙新材料科技有限公司 一种双面蚀刻装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003100842A1 (fr) * 2002-05-23 2003-12-04 Sumitomo Precision Products Co., Ltd Dispositif de traitement de substrats equipe d'un mecanisme de transport
JP4181853B2 (ja) 2002-11-15 2008-11-19 Ｎｅｃ液晶テクノロジー株式会社 積層膜の複合ウェットエッチング方法
JP2005015913A (ja) * 2003-06-03 2005-01-20 Dainippon Screen Mfg Co Ltd 基板のエッチング処理方法およびエッチング処理装置
JP4421956B2 (ja) * 2003-07-18 2010-02-24 芝浦メカトロニクス株式会社 基板の処理装置及び処理方法
JP4969138B2 (ja) * 2006-04-17 2012-07-04 大日本スクリーン製造株式会社 基板処理装置
WO2007129389A1 (fr) * 2006-05-01 2007-11-15 Hitachi Plasma Display Limited Ligne de retrait de resist
JP4747186B2 (ja) * 2008-06-02 2011-08-17 Ｎｅｃ液晶テクノロジー株式会社 積層膜の複合ウェットエッチング方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148297A (ja) * 1995-11-24 1997-06-06 Hitachi Ltd 基板の乾燥方法およびこれを用いる乾燥装置およびこれを用いる半導体装置の製造方法
JPH11145109A (ja) * 1997-11-07 1999-05-28 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000114221A (ja) * 1998-10-02 2000-04-21 Dainippon Screen Mfg Co Ltd 基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148297A (ja) * 1995-11-24 1997-06-06 Hitachi Ltd 基板の乾燥方法およびこれを用いる乾燥装置およびこれを用いる半導体装置の製造方法
JPH11145109A (ja) * 1997-11-07 1999-05-28 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000114221A (ja) * 1998-10-02 2000-04-21 Dainippon Screen Mfg Co Ltd 基板処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110113883A (zh) * 2019-05-10 2019-08-09 无锡睿龙新材料科技有限公司 一种双面蚀刻装置
CN110113883B (zh) * 2019-05-10 2024-04-02 无锡睿龙新材料科技有限公司 一种双面蚀刻装置

Also Published As

Publication number Publication date
WO2002049086B1 (fr) 2002-08-29
CN1398425A (zh) 2003-02-19
TW535195B (en) 2003-06-01
JP2002208582A (ja) 2002-07-26
KR20020084121A (ko) 2002-11-04
CN1208813C (zh) 2005-06-29
JP3622842B2 (ja) 2005-02-23

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