535195 五、發明說明（1) 【發明所屬之技術領域】 本發明關於使用於液晶顯示裝置用玻璃基板製造等之搬 運式基板處理裝置。 【習知技術】 使用於液晶顯示裝置之玻璃基板，係在素材之玻璃基板 表面反覆施加飩刻，剝離等之化學性處理加以製造。其處 理裝置係大別爲乾式與濕式，濕式又再分爲批次式與片葉 式。並且，片葉式係細分爲迴轉式與輥輪搬運等之搬運方 式。 這些基板處理裝置之中，搬運式者係成爲邊將基板向水 平方向搬運在其基板表面供給處理液之基本構成，因高效 率所以從以前就使用於蝕刻處理或剝離處理。 使用於蝕刻處理之搬運式基板處理裝置，係在基板搬運 線之上方從配置成矩陣狀之多數噴霧噴嘴噴射蝕刻液，藉 在其蝕刻液中通過基板，在基板之全體表面供給蝕刻液。 藉此淋浴處理，基板表面係除了罩幕材（masking materi 1 )之被塗敷部分進行選擇性蝕刻。結束蝕刻時，持續進 行使用淋浴之洗淨處理。剝離處理用者，也是基本上爲相 同構成。 【發明所欲解決之問題】 然而，於液晶顯示裝置用玻璃基板，係連同基板之大型 化進展著電路之高精細化。作爲使用於其基板之配線材料 ，以前大多使用鉻，但是隨伴著最近之高精細化想轉換爲 535195 五、發明說明（2 ) 電阻率（specific resistivity)値低之 A 1 (錫）或 A 1 (鋁）/Mo (鉬）。因此，蝕刻用之移動式基板處理裝置， 也開始使用A 1用飩刻液，但是隨著此蝕刻液之使用曉得 了會發生以下之問題。 亦即，作爲A 1用蝕刻液使用將磷酸爲主要成分者。由 此蝕刻液之A 1之飩刻速度，爲較C r用蝕刻之C r之蝕 刻速度（etching rate)爲高，藉此雖然可得到高蝕刻效 率，但是曉得了其另一方面蝕刻後之A 1層之側緣面（s i d e e d g e s u r f a c e ) 5會變成不適合次層疊層之形狀。 第3圖係表示蝕刻後之A 1層形狀之剖面圖。在屬於素 材之玻璃基板1上形成A 1層2及Mo層3，在其上被覆 罩幕材4。由於蝕刻在未被覆罩幕材4部分雖然除去了 A 1層2及Mo層3，但是所留下之A 1層2及Mo層3之 側緣面，爲如實線所示變成豎起之陡峭傾斜。變成這樣時 ，在A 1層2及Mo層3上，不能安定地載置次層。爲了 使安定地載置次層，就如鏈線所示，必須將其側緣面 之傾斜成爲和緩。在沒有Μ 〇層3時也變成相同傾向。 本發明之目的係提供一種搬運式基板處理裝置，其係適 用於A 1蝕刻，將A 1層之側緣面可形成爲適合於次層疊 層之和緩傾斜面，同時，也可消除起因於初期淋浴之處理 不均勻現象。 【解決問題之手段】 爲了解液上述目的，本發明之搬運式基板處理裝置係具 535195 五、發明說明（3 ) 有：從排列於基板之搬運方向及直角於其搬運方向之多數 噴霧噴嘴對於全體基板表面供給處理液之淋浴方式之第1 處理部，與從配置於第1處理部下游側1段式複數段之開 縫噴嘴對於基板表面之全域寬度方向成爲膜狀供給處理液 之化學刀方式之第2處理部。 適用於A 1蝕刻時，於第1處理部之淋浴處理，液體之 置換顯著地發生，雖然可確保高蝕刻速度，但是A 1層之 側緣面，將成爲不適合次層疊層之陡峭傾斜面。於第2處 理部，由於化學刀處理，在基板表面上蝕刻液成爲薄敷之 漿葉狀態，幾乎不進行液體置換。因此，A 1層之蝕刻爲 從表面和緩地進行，側緣面之傾斜將成爲和緩。 在第1處理部入口部，先行於淋浴處理設進行化學刀處 理之開縫噴嘴，在淋浴處理之前，由於將基板通過處理液 之流下膜中，基板表面將均勻地濕潤。一旦均勻地濕潤 時，即使於其後受到淋浴處理，也不會發生由於液滴之處 理引起之不均勻。因此，藉在第1處理部之入口部裝設開 縫噴嘴，也可消除起因於初期淋浴之處理不均勻現象。 於本發明之搬運式基板處理裝置，又因從處理液之處理 部之入口部分在約略全域欲進行漿葉處理，在基板之搬運 方向可配置1段或複數段將在基板表面之寬度方向全域成 爲膜狀供給處理液之開縫噴嘴。亦即，省略淋浴方式之第 1處理部，只由化學刀方式之第2處理，也可由處理液進 行處理。藉此，雖然蝕刻速度會降低，但是可有效地防止 535195 五、發明說明（4 ) 側緣面之陡峭豎起。 本發明之搬運式基板處理裝置，尤其對於A 1蝕刻較 佳，但是雖然有效果上程度之差異，但是較其他蝕刻處理 也有效。 【發明之實施形態】 茲依據圖面說明本發明之實施形態如下。第1圖係表示 本發明之1實施形態之搬運式基板處理裝置之平面圖，第 2圖係該基板處理裝置之主要部之側面圖。 本實施形態之搬運式基板處理裝置，係進行液晶顯示裝 置用玻璃基板1 00 (以下只稱基板1 00)之A 1蝕刻 處理者。此基板處理裝置，係如第1圖所示，採用直線狀 之第1線A，對於第1線A直角地連接之第2線B，直角 地連接於第2線B而並聯於第1線A之第3線C所組合之 U倒轉形式之佈置。 第1線A係將接受部1 0，除液部2 0及蝕刻部3 0連 結成直線狀構成。第2線B係水洗部4 0，在基板1 〇 〇 表面裝設散布洗淨水之淋浴單元4 1。第3線C係將移載 裝置50，旋轉乾燥器60，移載裝置70及取出部80 連結成直線狀所構成。 第1線A及第2線B，係將基板1 0 0向線長向搬運所 用，具有搬運方向以既定間隔並行之多數搬運輥輪。各搬 運輥輪，係對於搬運方向成直角之水平輥輪。第2線B， 亦即在水洗部4 0之入口部裝設有將基板1 〇 0之進行方 535195 五、發明說明（5 ) 向變更9 0度之轉向機構4 2。 接受A 1鈾刻處理之基板1 〇 〇，係由搬運裝置9 〇搬 入於接受部1 0。其基板1 0 0係由於輥輪搬運，從除液 部2 0進入於蝕刻部3 0，通過此時段接受處理。通過蝕 刻部3 0之基板1 0 0，持續由輥輪搬運進入於水洗部 4 0，向進行方向變更9 0度移動水洗部4 0，在其行動 時段接受水處理。 移動到水洗部4 0出口部之基板1 0 〇，係由移載裝置 5 0從水洗部4 0被搬運至旋轉乾燥器6 0。在旋轉乾燥 器6 0結束乾燥之基板1 0 0，係由於移載裝置7 0從旋 轉乾燥器6 0搬運至取出部8 0，並且由搬運裝置9 0搬 出裝置外。 本實施形態之搬運式基板處理裝置，係在蝕刻部3 0特 別有大的特徵。此蝕刻部3 0係如第2圖所示，具有將基 板1 0 0向水平方向搬運之搬運輥輪3 1，在基板1 〇 〇 之搬運線之上方，爲了對於基板1 0之表面供給蝕刻液， 沿著基板1 0之進行方向依序設有第1開縫噴嘴3 3，淋 浴單元3 4及第2開縫噴嘴3 5搬運輥輪3 1係設於驅動 軸3 1 a之軸方向複數位置之大徑部3 1 b而以點支持基 板1 0 0，以設於兩側之凸緣部3 1 c進行基板1 〇 〇之 寬度方向定位。 第1開縫噴嘴3 3係對於基板1 0 0之進行方向成直角 之水平噴嘴，藉將A 1用蝕刻液成爲膜狀流下，將其蝕刻 535195 五， ‘發 明說明 (6) 液 及至 基板1 0 表面 之 進 行方 向一部之 總寬供給成直線 狀 〇 淋浴單元3 4 係構成淋浴方式之第1 處理部。此淋浴單 元 3 4 係具有在 對於 基 板 10 0進行方 向成平行之水平方 向 及對 於其進行 方向 成 直 角之水平方向 以既定間隔排列成 矩 陣_狀 (包括据 齒狀 ) 之 多數 之噴霧噴 嘴3 4 a，較基板 1 0之 表面更寬 範圍 噴 霧 A 1 用蝕刻液 〇 多數噴霧噴嘴3 4 a j 係在此對於基板1 0 0之進行方 向 成直 角方向並行各 個 爲 向基 板1 0 0 之進行方向延伸之 複 數支 管集箱（ header ) 管3 4 b向下 方安裝。各噴霧噴 嘴 3 4 a係將A 1用 蝕 刻 液成 爲細狀液 滴噴射成圓錐形 狀 ，在 鄰接之噴 嘴間 j 各 噴嘴 之噴射範 圍成爲重疊。於此 之 蝕刻 液之供給 量， 被 設 定爲 在基板1 0 0之表面上可進 行充分之液體置 換。 第2 開縫噴嘴3 5 係與第1 開縫噴嘴3 3同樣，基板 1 0 0 之進行方 向成 直 角之水平噴嘴， 對於基板1 0 0之 進 行方 向以既定 間隔 排列有複 數，以構 成化學刀方式之第 2 處理 部。各開 縫噴 嘴 3 5係 與第1開 縫噴嘴3 3相異， 藉 將少 量A 1用 蝕刻 液 成 膜狀 流下於基 板1 0 0之搬運方 向成直 角，將其 蝕刻 液 成 直線 狀供給， 滯留於基板1 0表 面 之進 行方向一 部分及 至 總寬 。亦即， 蝕刻液之供給量係 供 給於 基板1 0 表面 之 蝕 刻液 爲由表面 張力被設定爲保持 於其表 面上之程 度。 -8 ,- 535195 五、發明說明（7 ) 3 6係配置於最後段之第2開縫噴嘴3 5之再後方之開 縫形式之空氣噴嘴，藉基板1 〇表面之進行方向一部及至 總寬成直線狀噴吹空氣’從其表面去除蝕刻液。 成爲這種方式之本實施形態之連續式基板處理裝置，從 除液部2 0進入於蝕刻部3 0之基板1 0 0，係首先，通 過從第1開縫噴嘴3 3流下之A 1用蝕刻液之膜中，在其 表面上從先端部依序供給蝕刻液。之後，通過從淋浴單元 3 4噴射之A 1用蝕刻液之中，對於基板1 0 0之全體表 面供給A 1用飩刻液，進行既定之蝕刻。 對於基板1 0 0表面突然淋浴A 1用蝕刻液時，最初接 受液滴之部分將變成處理不勻而留下，但是因在事前通過 蝕刻液之膜中，由於在其表面上均勻地供給蝕刻液，所以 可防止隨伴著蝕刻液之淋浴處理所引起之處理不勻。 藉使用A 1用蝕刻液之淋浴處理，形成於基板1 0 〇表 面之A 1層或A 1 /Mo層爲被選擇性地蝕刻。於此淋浴 處理，留下之A 1層或A 1 /Mo層之側緣面，將成爲不 適合次層疊層之陡峭傾斜面。然而，繼於此淋浴處理，在 基板1 0 0之表面供給從第2開縫噴嘴3 5成爲膜狀流下 之A 1用蝕刻液，在其表面上保持爲漿葉狀態。在此時 段，和緩地進行蝕刻處理，如第3圖以1點鏈線所示，所 留下之A 1層或A 1 / Mo層之側緣面，將變成適合於次 層疊層之和緩傾斜面。 由複數之第2開縫噴嘴3 5所構成之化學刀方式之第2 535195 五、發明說明（8 ) 處理部，可說是，將由淋浴單元3 4所構成之第1處理部 之後段部分置換爲漿葉處理部者。漿葉處理時間係由蝕刻 液之總處理時間之1 0〜4 5 %較佳’ 2 0〜4 0 %則更 佳。若漿葉處理時間太短時雖然側緣面之未充分受到緩 和，但是若太長時就變成相反效果，處理效率之降低或無 謂液之消費將成爲問題。於漿葉處理部使基板1 〇 〇往復 移動也可確保其處理時間。 於上述實施形態，將蝕刻部3 0成爲第1開縫噴嘴3 3，淋浴單元3 4及第2開縫噴嘴3 5組合之複合處理 部，但是如上述也可省略第1開縫噴嘴3 3及淋浴單元 3 4，從蝕刻部3 0之入口部分約略全域也可進行使用第 2開縫噴嘴35之漿葉處理。 【發明效果】 如以上所說明，本發明之搬運式基板處理裝置，係在淋 浴方式之第1處理部下游側，藉設在基板表面之寬度方向 全域成爲膜狀供給處理液之開縫噴嘴所構成之化學刀方式 之第2處理部，就可將在A 1蝕刻成爲問題之A 1層之側 緣面之陡峭豎起改變爲適合次層之疊層之和緩傾斜。 又，在第1處理部之入口部先行於淋浴處理設置進行化 學刀處理開縫噴嘴，在淋浴處理前，將基板通過處理液之 流下膜中，就可防止由淋浴處理之所引起之處理不均勻。 又’從由處理液之處理部之入口部分在約略全域欲進行 漿葉處理，將在基板表面之寬度方向全域成膜狀供給處理 -10- 535195 五、發明說明（9 ) '液5：開縫噴嘴，對於基板之搬運方向藉配置1段式複數段 ’也可將在A 1蝕刻成爲問題之A 1層之側緣面之陡峭豎 立改變爲適合於次層疊層之和緩傾斜。 圖式之簡單說明： 第1圖係表示本發明之一實施形態之搬運式基板處理裝 置之平面圖。 第2圖係表示本發明之一實施形態之搬運式基板處理裝 置之主要部側面圖。 第3圖係表示蝕刻後之A 1層之形狀之剖面圖。 符 號 之 簡單 說 明 • 1 0 接受 部 ， 2 0 除液 部 j 3 0 蝕刻 部 9 3 3 第1 開 縫 噴 嘴 3 4 淋浴 單 元 ， 3 5 第2 開 縫 噴 嘴 4 0 水洗 部 9 4 1 淋浴 單 元 9 5 0 7 0 … 移 載 裝 6 0 … 旋轉 乾 燥 器 8 0 … 取出 部 9 9 0 … 搬運 裝 置 y 1 0 0 …基 板 〇535195 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a transportable substrate processing apparatus used for manufacturing a glass substrate for a liquid crystal display device and the like. [Known technology] A glass substrate used in a liquid crystal display device is manufactured by repeatedly applying chemical treatments such as engraving and peeling on the surface of the glass substrate of the material. Its processing equipment is largely divided into dry type and wet type, and wet type is further divided into batch type and leaf type. In addition, the leaf type is subdivided into a rotary type and a roller type conveying method. Among these substrate processing apparatuses, the transporter has a basic structure for supplying a processing liquid on the substrate surface while carrying the substrate in a horizontal direction, and has been used for etching or peeling processing because of its high efficiency. A portable substrate processing apparatus used for etching processes sprays an etchant from a plurality of spray nozzles arranged in a matrix above a substrate transfer line, and supplies the etchant to the entire surface of the substrate by passing the substrate through the substrate in the etchant. With this shower treatment, the substrate surface is selectively etched except for the coated part of the masking materi 1. When the etching is finished, the cleaning process using a shower is continued. The peeling treatment users also have basically the same structure. [Problems to be Solved by the Invention] However, the glass substrate for a liquid crystal display device is progressing with a higher definition of the circuit together with the enlargement of the substrate. As the wiring material used for the substrate, chromium was mostly used in the past, but it is expected to be converted to 535195 with the recent high definition. V. Description of the invention (2) A 1 (tin) or A with a low specific resistivity 1 (aluminum) / Mo (molybdenum). Therefore, the mobile substrate processing apparatus for etching has also started to use an etching solution for A1. However, it is known that the following problems will occur with the use of this etching solution. That is, as the etching solution for A 1, phosphoric acid is used as a main component. As a result, the etching rate of A 1 of the etching solution is higher than the etching rate of C r for etching of C r, so that although a high etching efficiency can be obtained, it is known that The side edge surface 5 of layer A1 will become a shape that is not suitable for the sub-layers. Fig. 3 is a sectional view showing the shape of the A1 layer after etching. An A1 layer 2 and a Mo layer 3 are formed on a glass substrate 1 which is a plain material, and a curtain material 4 is covered thereon. Although the A 1 layer 2 and the Mo layer 3 were removed in the uncovered curtain material 4 due to the etching, the side edges of the A 1 layer 2 and the Mo layer 3 that were left became steep as shown by the solid line. tilt. In this case, the secondary layer cannot be stably placed on the A1 layer 2 and the Mo layer 3. In order to place the sublayer stably, as shown by the chain line, the slope of its side edge surface must be gentle. The same tendency also occurs when there is no MO layer 3. An object of the present invention is to provide a portable substrate processing apparatus, which is suitable for A 1 etching, and can form a side edge surface of the A 1 layer into a mildly inclined surface suitable for a sub-layer layer. At the same time, it can also eliminate the cause from the initial stage. Shower uneven treatment. [Means for solving the problem] In order to understand the above-mentioned purpose of the liquid, the portable substrate processing apparatus of the present invention has 535195 V. Description of the invention (3) There are many spray nozzles for The first processing unit of the shower method for supplying the processing liquid to the entire substrate surface, and the chemical knife for supplying the processing liquid in the form of a film to the entire widthwise direction of the substrate surface from the slit nozzles arranged in a plurality of stages on the downstream side of the first processing unit. The second processing unit of the mode. When it is applied to A 1 etching, the liquid replacement occurs remarkably in the shower treatment of the first processing section. Although the high etching speed can be ensured, the side edge surface of the A 1 layer becomes a steep inclined surface that is not suitable for the sub-layer. In the second processing unit, the etching solution is thinly applied to the surface of the substrate due to the chemical knife treatment, and almost no liquid replacement is performed. Therefore, the etching of the A 1 layer is performed gently from the surface, and the inclination of the side edge surface becomes gentle. At the entrance of the first processing section, a slit nozzle for chemical knife treatment is set in a shower treatment. Before the shower treatment, the substrate surface is wetted uniformly by passing the substrate through the treatment liquid. Once uniformly wet, even if subjected to a shower treatment thereafter, unevenness due to droplet treatment does not occur. Therefore, by installing a slit nozzle at the entrance of the first processing section, it is possible to eliminate the processing unevenness caused by the initial shower. In the portable substrate processing apparatus of the present invention, since the blade processing is performed in approximately the entire area from the entrance portion of the processing portion of the processing liquid, one or more sections can be arranged in the substrate conveying direction and the entire area in the width direction of the substrate surface can be arranged. It becomes a slit nozzle for supplying the treatment liquid in a film form. That is, the first processing section of the shower method is omitted, and only the second processing of the chemical knife method can be performed, and the processing solution can also be used. By this, although the etching speed will be reduced, it can effectively prevent the vertical rise of the side edges of the invention. The portable substrate processing apparatus of the present invention is particularly good for A 1 etching, but although there is a difference in the degree of effect, it is more effective than other etching processes. [Embodiment of the invention] The embodiment of the present invention is described below with reference to the drawings. Fig. 1 is a plan view showing a transportable substrate processing apparatus according to a first embodiment of the present invention, and Fig. 2 is a side view of a main part of the substrate processing apparatus. The transportable substrate processing apparatus of this embodiment is an A 1 etching processer for a glass substrate 100 (hereinafter referred to simply as a substrate 100) for a liquid crystal display device. As shown in FIG. 1, this substrate processing apparatus uses a straight first line A, and the second line B connected at right angles to the first line A is connected to the second line B at right angles and parallel to the first line The arrangement of the U inverted form combined with the third line C of A. The first line A is formed by connecting the receiving portion 10, the liquid removing portion 20, and the etching portion 30 in a straight line. The second line B is a water washing section 40, and a shower unit 41 for dispersing washing water is installed on the surface of the substrate 100. The third line C is formed by connecting the transfer device 50, the spin dryer 60, the transfer device 70, and the take-out portion 80 in a straight line. The first line A and the second line B are used for conveying the substrate 100 in the line length direction, and have a plurality of conveying rollers which are conveyed in parallel at a predetermined interval in the conveying direction. Each carrying roller is a horizontal roller at right angles to the carrying direction. The second line B, that is, the entrance part of the water washing part 40 is provided with a substrate 100 100. 535195 V. Description of the invention (5) The steering mechanism 42 which changes 90 degrees. The substrate 100, which has undergone A1 uranium engraving, is carried into the receiving section 10 by a handling device 90. The substrate 100 is transported by rollers, and enters the etching section 30 from the liquid removal section 20 and is processed during this period. The substrate 100, which has passed through the etched part 30, is continuously carried into the water washing part 40 by rollers, and the water washing part 40 is moved 90 degrees in the direction of progress, and water treatment is received during its operation period. The substrate 100 moved to the outlet 40 of the washing section 40 is transferred from the washing section 40 to the rotary dryer 60 by the transfer device 50. The substrate 100, which has been dried at the rotary dryer 60, is transferred from the rotary dryer 60 to the removal section 80 by the transfer device 70, and is carried out of the device by the transfer device 90. The transportable substrate processing apparatus of this embodiment is particularly large in the etching section 30. As shown in FIG. 2, this etching portion 30 has a conveying roller 31 for conveying the substrate 100 in a horizontal direction, and is provided above the conveying line of the substrate 100 so as to etch the surface of the substrate 10. Liquid, the first slotted nozzle 3 3, the shower unit 3 4 and the second slotted nozzle 3 are sequentially provided along the direction of the substrate 10, and the 5 conveying roller 3 1 is arranged in the axial direction of the driving shaft 3 1 a. The large-diameter portion 3 1 b at a plurality of positions supports the substrate 100 with dots, and the width direction of the substrate 100 is positioned with the flange portions 3 1 c provided on both sides. The first slitting nozzle 3 3 is a horizontal nozzle at a right angle to the direction of the substrate 100. The A 1 is etched into a film with the etching solution and etched 535 195. "Invention (6) Liquid and substrate 1" 0 The entire width of one surface in the direction of progress is supplied linearly. 0 The shower unit 3 4 constitutes the first processing unit of the shower system. This shower unit 3 4 has a plurality of spray nozzles 3 4 which are arranged in a matrix pattern (including a tooth shape) at predetermined intervals in a horizontal direction parallel to the substrate 100's running direction and a horizontal direction perpendicular to the substrate's running direction. a, a wider range than the surface of the substrate 10 spraying A1 with an etching solution. Most of the spray nozzles 3 4 aj are here at right angles to the direction of the substrate 100 running parallel to the direction of the substrate 100 The extended plural header header pipes 3 4 b are installed downward. Each of the spray nozzles 3 4 a sprays the etching liquid of A 1 into a fine liquid droplet, and sprays them into a conical shape, and the spraying ranges of the respective nozzles between adjacent nozzles overlap. The supply amount of the etching solution here is set to allow sufficient liquid exchange on the surface of the substrate 100. The second slotted nozzle 3 5 is a horizontal nozzle similar to the first slotted nozzle 3 3 in that the substrate 100 is running at right angles. A plurality of substrates are arranged at predetermined intervals in the direction of the substrate 100 to form a chemical knife. The second processing section of the method. Each slotted nozzle 35 is different from the first slotted nozzle 33, and a small amount of A1 is formed into a film with an etching solution and flowed down at a right angle to the conveying direction of the substrate 100, and the etching solution is supplied in a straight line. It stays on a part of the substrate 10 surface in the direction of travel and reaches a total width. That is, the supply amount of the etchant is the degree to which the etchant supplied to the surface of the substrate 10 is set to be maintained on the surface by the surface tension. -8,-535195 V. Description of the invention (7) 3 6 is an air nozzle in the form of a slit in the second section of the second slotted nozzle 35, which is located at the rear of the slot. The air is blown in a wide line to remove the etchant from its surface. The continuous substrate processing apparatus of this embodiment in this manner enters the substrate 1 0 from the liquid removing portion 20 into the etching portion 30, and firstly, it is used by A 1 flowing down from the first slitting nozzle 33. In the film of the etching solution, an etching solution is sequentially supplied from the tip end on the surface. Thereafter, the etching solution for A 1 is supplied to the entire surface of the substrate 100 from the etching solution for A 1 sprayed from the shower unit 34 to perform predetermined etching. When the etching solution for A 1 is suddenly showered on the surface of the substrate 100, the portion that initially received the droplets will become uneven and remain, but because the film that passed the etching solution beforehand, the etching is uniformly supplied on the surface. Liquid, so it can prevent the processing unevenness caused by the shower treatment accompanied by the etching solution. The A 1 layer or the A 1 / Mo layer formed on the surface of the substrate 100 is selectively etched by a shower treatment using an A 1 etching solution. After the shower treatment, the side edge surface of the A 1 layer or the A 1 / Mo layer left will become a steep inclined surface which is not suitable for the sub-layers. However, following this shower treatment, an etching solution for A 1 flowing from the second slitting nozzle 35 to a film-like state was supplied to the surface of the substrate 100, and the surface of the substrate was maintained in a slurry state. During this period, the etching process is performed gently. As shown in the chain line at 1 in Figure 3, the left side edge of the A 1 layer or A 1 / Mo layer will become a gentle slope suitable for the sub-layer layer. surface. The second chemical knife method composed of a plurality of second slotted nozzles 35 5 535195 5. Description of the invention (8) The processing section can be said to replace the rear section of the first processing section composed of the shower unit 34 For the pulp leaf treatment department. The blade treatment time is preferably from 10 to 45% of the total treatment time of the etching solution, and more preferably from 20 to 40%. If the treatment time of the blade is too short, although the side edge surface is not sufficiently alleviated, if it is too long, it will have the opposite effect, and the reduction of the treatment efficiency or the consumption of unnecessary liquid will become a problem. Reciprocating the substrate 100 in the paddle processing section can also ensure the processing time. In the above embodiment, the etching section 30 is a composite processing section in which the first slotted nozzle 33 is combined with the shower unit 34 and the second slotted nozzle 35, but the first slotted nozzle 3 3 may be omitted as described above. And the shower unit 34, the blade processing using the second slit nozzle 35 may be performed over the entire area from the entrance portion of the etching portion 30. [Effects of the Invention] As described above, the transportable substrate processing apparatus of the present invention is located downstream of the first processing section of the shower method, and is provided as a slit nozzle for supplying the processing liquid in a film form over the entire width direction of the substrate surface The second processing section of the chemical knife method can be used to change the steep rise of the side edge surface of the A1 layer, which is a problem in A1 etching, to a gentle tilt suitable for the sub-layer stack. In addition, the entrance of the first processing unit is provided with a slitting nozzle for chemical knife treatment before the shower treatment. Before the shower treatment, the substrate is allowed to flow through the film into the film to prevent the processing failure caused by the shower treatment. Even. Also, from the inlet of the processing part of the processing liquid, the blade is to be processed in approximately the whole area, and the film is supplied in the whole area in the width direction of the substrate surface. -10- 535195 V. Description of the invention (9) 'Liquid 5: Open The slit nozzle can also be used to change the steepness of the side edge surface of the A1 layer, which is a problem in A1 etching, to a gentle tilt of the sub-layer layer by arranging a plurality of stages of the substrate conveying direction. Brief description of the drawings: Fig. 1 is a plan view showing a portable substrate processing apparatus according to an embodiment of the present invention. Fig. 2 is a side view showing a main part of a portable substrate processing apparatus according to an embodiment of the present invention. Fig. 3 is a sectional view showing the shape of the A1 layer after etching. Simple explanation of symbols • 1 0 receiving section, 2 0 liquid removing section j 3 0 etching section 9 3 3 first slotted nozzle 3 4 shower unit, 3 5 second slotted nozzle 4 0 washing section 9 4 1 shower unit 9 5 0 7 0… Transfer loading 6 0… Rotary dryer 8 0… Take-out section 9 9 0… Carrying device y 1 0 0… Substrate
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